JPH09206715A - High frequency washing method - Google Patents
High frequency washing methodInfo
- Publication number
- JPH09206715A JPH09206715A JP1526096A JP1526096A JPH09206715A JP H09206715 A JPH09206715 A JP H09206715A JP 1526096 A JP1526096 A JP 1526096A JP 1526096 A JP1526096 A JP 1526096A JP H09206715 A JPH09206715 A JP H09206715A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- cleaning liquid
- nozzle
- tank
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Special Spraying Apparatus (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】本発明は、液晶ガラス基板、
半導体ウェハや磁気ディスク等の被洗浄物を高周波洗浄
するための方法に関する。[0001] The present invention relates to a liquid crystal glass substrate,
The present invention relates to a method for high-frequency cleaning an object to be cleaned such as a semiconductor wafer and a magnetic disk.
【０００２】[0002]
【従来の技術】従来、液晶ガラス基板、半導体ウェハ、
磁気ディスク等の被処理物を洗浄するには、図４に示す
ように一方向に配列された複数の搬送ロール１の上方に
細長状の吐出口２、振動子３および洗浄液供給管４を有
するバー型高周波ノズル５を配置した洗浄装置を用い、
水平に配置された被洗浄物である基板６を前記複数の搬
送ロール１により１枚１枚搬送させながら、前記高周波
ノズル５に前記洗浄液供給管４を通して供給し、前記振
動子３を振動させて前記吐出口から高周波音波に乗った
洗浄液を前記基板６に噴射する方法が知られている。2. Description of the Related Art Conventionally, liquid crystal glass substrates, semiconductor wafers,
In order to clean an object to be processed such as a magnetic disk, as shown in FIG. 4, an elongated ejection port 2, a vibrator 3 and a cleaning liquid supply pipe 4 are provided above a plurality of transport rolls 1 arranged in one direction. Using a cleaning device in which the bar type high frequency nozzle 5 is arranged,
While the substrate 6 which is the object to be cleaned arranged horizontally is conveyed one by one by the plurality of conveying rolls 1, the cleaning liquid is supplied to the high frequency nozzle 5 through the cleaning liquid supply pipe 4, and the vibrator 3 is vibrated. A method is known in which a cleaning liquid on which high-frequency sound waves are applied is jetted onto the substrate 6 from the discharge port.
【０００３】しかしながら、前記洗浄方法は枚葉処理で
あるために一度に複数枚の被洗浄物を洗浄することがで
きないという問題があった。このようなことから、図５
に示すように処理槽１１内に複数枚の被洗浄物１２を垂
直に立てて配置し、前記処理槽１１底部に振動子１３を
取り付け、前記処理槽１１内に洗浄液を収容した後、前
記振動子１３を振動させて高周波音波を前記洗浄液に放
射して前記処理槽１１内の複数枚の被洗浄物を一度に洗
浄する方法が行われている。However, since the above-mentioned cleaning method is a single-wafer processing, there is a problem that a plurality of objects to be cleaned cannot be cleaned at one time. From such a point, FIG.
As shown in FIG. 4, a plurality of objects to be cleaned 12 are vertically arranged in the processing tank 11, a vibrator 13 is attached to the bottom of the processing tank 11, and a cleaning liquid is stored in the processing tank 11, and then the vibration is generated. A method is employed in which the child 13 is vibrated and high-frequency sound waves are emitted to the cleaning liquid to clean a plurality of objects to be cleaned in the processing tank 11 at once.
【０００４】しかしながら、前述した洗浄方法にあって
は高周波音波によって前記被洗浄物から除去された汚染
微粒子（パーティクル）が洗浄処理中に前記被洗浄物の
表面に再付着したり、洗浄処理後に前記被洗浄物を前記
処理槽から外部に取出す際に前記洗浄液表面や洗浄液中
に浮遊するパーティクルを拾い上げて再付着したりする
という問題があった。However, in the above-mentioned cleaning method, contaminant fine particles (particles) removed from the object to be cleaned by high frequency sound waves are re-adhered to the surface of the object to be cleaned during the cleaning process, or after the cleaning process, There is a problem that particles floating in the surface of the cleaning liquid or particles floating in the cleaning liquid are picked up and redeposited when the object to be cleaned is taken out from the processing tank to the outside.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、複数枚の被
洗浄物を一度に洗浄することが可能で、かつ洗浄中およ
び洗浄後の洗浄液からの取出し時に被洗浄物表面にパー
ティクルが再付着するのを防止して精密洗浄を行うこと
が可能な高周波洗浄方法を提供しようとするものであ
る。DISCLOSURE OF THE INVENTION The present invention is capable of cleaning a plurality of objects to be cleaned at one time, and particles are reattached to the surface of the object to be cleaned during cleaning and during removal from the cleaning liquid after cleaning. The present invention is intended to provide a high-frequency cleaning method capable of preventing the above-mentioned deterioration and performing precision cleaning.
【０００６】[0006]
【課題を解決するための手段】本発明に係わる高周波洗
浄方法は、細長状の洗浄液吐出口を有するノズル筐体
と、この筐体の前記吐出口と反対側の面に配置され、振
動子が取着された振動板と、前記吐出口および前記振動
板が取り付けられた面を除く前記筐体面に連結された洗
浄液供給管と、前記振動子を駆動するための高周波発振
器とを具備したバー型高周波振動ノズルを用いて複数枚
の被洗浄物を洗浄するに際し、前記複数の被洗浄物を垂
直に配置し、これら被洗浄物の上方に前記振動ノズルを
前記細長状の洗浄液吐出口が対向すると共にそれら被洗
浄物の配列方向に沿うように配置し、前記振動ノズルの
前記吐出口から高周波音波に乗った洗浄液を前記各被洗
浄物に向けて噴射しながら前記振動ノズルを前記被洗浄
物の幅方向に往復動作させることを特徴とするものであ
る。A high frequency cleaning method according to the present invention comprises a nozzle housing having an elongated cleaning liquid discharge port, and a vibrator disposed on a surface of the housing opposite to the discharge port. A bar type equipped with a vibrating plate attached thereto, a cleaning liquid supply pipe connected to the casing surface excluding the surface on which the discharge port and the vibrating plate are attached, and a high frequency oscillator for driving the vibrator. When cleaning a plurality of objects to be cleaned using the high-frequency vibrating nozzle, the plurality of objects to be cleaned are arranged vertically, and the vibrating nozzle is opposed to the elongated cleaning liquid discharge port above the objects to be cleaned. Along with arranging along the arrangement direction of the objects to be cleaned, the vibrating nozzle is used to eject the cleaning liquid on the high frequency sound waves from the discharge port of the vibrating nozzle toward the objects to be cleaned. Reciprocating in the width direction It is characterized in that to.
【０００７】本発明に係わる別の高周波洗浄方法は、洗
浄液が収容され、上端にオーバーフロー部を有する洗浄
槽と、この洗浄槽の底部に配置され、前記洗浄槽内の洗
浄液に高周波振動を付与するための振動板と、この振動
板の下面に取着された振動子と、この振動子を駆動する
ための高周波発振器と、前記洗浄槽の上方に配置された
洗浄液噴射手段と、前記洗浄槽内に洗浄液を供給する洗
浄液供給手段と、前記洗浄液の底部付近に連結された洗
浄液排出管とを具備した洗浄装置を用いて前記洗浄槽内
に配置された被洗浄物を洗浄する方法であって、前記洗
浄槽内に前記被洗浄物を垂直に立てて配置する工程と、
前記洗浄槽内に前記洗浄液供給手段により洗浄液を供給
する工程と、前記被洗浄物の少なくとも上端位置まで洗
浄液が供給された時点で前記振動子を駆動して前記振動
板から前記洗浄液に高周波音波を放射しながら前記洗浄
液を前記洗浄槽のオーバーフロー部からオーバーフロー
させる工程と、前記洗浄液供給手段からの洗浄液の供給
を停止した後、前記高周波音波の放射を続行しながら前
記洗浄液排出管を通して前記洗浄槽内の洗浄液を徐々に
排出すると同時に前記洗浄液噴射手段から前記被洗浄物
に向けて洗浄液を噴射する工程とを具備したことを特徴
とするものである。In another high-frequency cleaning method according to the present invention, a cleaning liquid is accommodated and has a cleaning tank having an overflow portion at an upper end and a cleaning tank disposed at the bottom of the cleaning tank, and high-frequency vibration is applied to the cleaning liquid in the cleaning tank. A vibration plate, a vibrator attached to the lower surface of the vibration plate, a high-frequency oscillator for driving the vibrator, a cleaning liquid ejecting unit arranged above the cleaning tank, and the inside of the cleaning tank. A method for cleaning an object to be cleaned arranged in the cleaning tank using a cleaning device comprising a cleaning liquid supply means for supplying a cleaning liquid to the cleaning liquid, and a cleaning liquid discharge pipe connected near the bottom of the cleaning liquid, Vertically arranging the object to be cleaned in the cleaning tank,
Supplying the cleaning liquid into the cleaning tank by the cleaning liquid supply means, and driving the vibrator to supply high-frequency sound waves from the diaphragm to the cleaning liquid when the cleaning liquid is supplied to at least the upper end position of the object to be cleaned. A step of overflowing the cleaning liquid from the overflow portion of the cleaning tank while radiating; and a step of stopping the supply of the cleaning liquid from the cleaning liquid supply means, and then continuing the radiation of the high frequency sound waves to the inside of the cleaning tank through the cleaning liquid discharge pipe. Of gradually discharging the cleaning liquid and simultaneously spraying the cleaning liquid from the cleaning liquid spraying unit toward the object to be cleaned.
【０００８】[0008]
【発明の実施の形態】以下、本発明に係わる高周波洗浄
方法を図１を参照して詳細に説明する。複数枚の被洗浄
物が垂直に立てて収納される支持部材、例えばカセット
２１の上方には、バー型高周波振動ノズル２２が配置さ
れている。前記高周波振動ノズル２２は、前記カセット
２１に収納される複数枚の被洗浄物と対向すると共にそ
れらの配列方向に沿う細長状の洗浄液吐出口２３を有す
るノズル筐体２４を備えている。図示しない振動子が取
着された振動板は、前記ノズル筐体２４の前記吐出口２
３と反対側の面に配置されている。高周波発振器（図示
せず）は、前記振動子に接続されている。洗浄液供給管
２５は、前記吐出口２３および前記振動板が取り付けら
れた面を除く前記ノズル筐体２４の側面に連結されてい
る。BEST MODE FOR CARRYING OUT THE INVENTION A high frequency cleaning method according to the present invention will be described in detail below with reference to FIG. A bar type high frequency vibrating nozzle 22 is arranged above a supporting member, for example, a cassette 21, in which a plurality of objects to be cleaned are vertically held. The high-frequency vibrating nozzle 22 is provided with a nozzle housing 24 having elongated cleaning liquid discharge ports 23 facing the plurality of objects to be cleaned housed in the cassette 21 and arranged in the arrangement direction. The vibrating plate to which a vibrator (not shown) is attached is the discharge port 2 of the nozzle housing 24.
It is arranged on the surface opposite to 3. A high frequency oscillator (not shown) is connected to the vibrator. The cleaning liquid supply pipe 25 is connected to the side surface of the nozzle housing 24 except the surface on which the discharge port 23 and the vibration plate are attached.
【０００９】次に、前述した洗浄装置を用いて本発明の
高周波洗浄方法を説明する。前記カセット２１内に複数
枚の被洗浄物（例えば半導体ウェハ）２６を垂直に立て
て収納した後、前記バー型高周波振動ノズル２２のノズ
ル筐体２４内に配置した振動子を高周波発振器により振
動し、前記振動子に取着された振動板を振動させると共
に洗浄液供給管２５を通して洗浄液（例えば純水）を前
記ノズル筐体２４内に供給する。このような振動板の振
動により前記ノズル筐体２４の吐出口２３から高周波音
波に乗った洗浄液２７を前記吐出口２３の下方に位置す
る前記カセット２１内に収納された各半導体ウェハ２６
に向けて噴射しながら前記高周波振動ノズル２２を前記
ウェハ２６の幅方向、例えば図１の矢印に示すように前
記ウェハ２６の外周の円弧に沿って往復動作させて洗浄
する。Next, the high-frequency cleaning method of the present invention will be described using the above-mentioned cleaning device. After a plurality of objects to be cleaned (for example, semiconductor wafers) 26 are vertically stood in the cassette 21 and stored, a vibrator arranged in the nozzle housing 24 of the bar type high frequency vibration nozzle 22 is vibrated by a high frequency oscillator. The vibrating plate attached to the vibrator is vibrated and a cleaning liquid (for example, pure water) is supplied into the nozzle housing 24 through the cleaning liquid supply pipe 25. Due to the vibration of the vibrating plate, the cleaning liquid 27 riding on the high frequency sound waves from the ejection port 23 of the nozzle housing 24 is stored in each of the semiconductor wafers 26 stored in the cassette 21 located below the ejection port 23.
The high frequency vibration nozzle 22 is reciprocated along the width direction of the wafer 26, for example, along the arc of the outer periphery of the wafer 26 as shown by the arrow in FIG.
【００１０】前記支持部材としては、前記カセットの他
にボートを用いることができる。前記被洗浄物として
は、前記半導体ウェハの他に、液晶ガラス基板、磁気デ
ィスク等を用いることができる。As the supporting member, a boat can be used in addition to the cassette. In addition to the semiconductor wafer, a liquid crystal glass substrate, a magnetic disk, or the like can be used as the object to be cleaned.
【００１１】前記振動板から洗浄液に放射される高周波
音波は、例えば０．７〜５ＭＨｚの周波数を有すること
が好ましい。以上説明した本発明に係わる高周波振動方
法によれば、例えば図１に示すようにバー型高周波振動
ノズル２２のノズル筐体２４の吐出口２３から高周波音
波に乗った洗浄液２７を前記吐出口２３の下方に位置す
るカセット２１内に収納された各半導体ウェハ２６に向
けて噴射しながら前記高周波振動ノズル２２を前記ウェ
ハ２６外周の円弧（図１の矢印方向）に沿って往復動作
させることによって、複数枚の半導体ウェハ２６の両面
全体に洗浄液が一様に噴射されるため、一度に複数枚の
半導体ウェハ２６を洗浄することができる。The high frequency sound waves emitted from the vibrating plate to the cleaning liquid preferably have a frequency of 0.7 to 5 MHz. According to the high-frequency vibrating method according to the present invention described above, for example, as shown in FIG. 1, the cleaning liquid 27 on the high-frequency sound wave is ejected from the ejection port 23 of the nozzle housing 24 of the bar-type high-frequency vibration nozzle 22 through the ejection port 23. While ejecting toward each semiconductor wafer 26 housed in the cassette 21 located below, the high-frequency vibrating nozzle 22 is reciprocated along an arc (arrow direction in FIG. 1) on the outer periphery of the wafer 26, thereby making a plurality of Since the cleaning liquid is uniformly sprayed on both sides of the semiconductor wafers 26, a plurality of semiconductor wafers 26 can be cleaned at one time.
【００１２】また、前記各半導体ウェハ２６に向けて噴
射することによって、前記ウェハ２６表面のパーティク
ルを洗浄液と共に洗い流すことができるため、パーティ
クルの再付着を防止でき、精密な洗浄を行うことができ
る。Further, since the particles on the surface of the wafer 26 can be washed off together with the cleaning liquid by spraying toward the respective semiconductor wafers 26, reattachment of particles can be prevented and precise cleaning can be performed.
【００１３】次に、本発明に係わる別の高周波洗浄方法
を図２および図３を参照して詳細に説明する。図２は、
本発明の高周波洗浄方法に用いられる洗浄装置を示す概
略図、図３は図２の洗浄槽付近の断面図である。外槽３
１は、中間付近に例えばタンタル薄膜からなる振動板３
２が配置され、前記振動板３２を底とする上部側には例
えば水３３が収容されている。振動子３４は、前記振動
板３２の下面に取り付けられている。図示しない高周波
発振器は、前記振動子３４に接続されている。上端にオ
ーバーフロー部３５を有する洗浄槽３６は前記外槽３１
に前記振動板３２と所望の距離をあけて設置されてい
る。洗浄液供給手段であるバッファタンク３７は、配管
３８を通して前記洗浄槽３６の下部側壁に連結されてい
る。第１電磁弁３９ａは、前記配管３８に介装されてい
る。洗浄液排出管４０は、その一端が前記洗浄槽３６の
下部側壁に連結され、かつ他端が図示しないドレイン受
タンクに連結されている。第２電磁弁３９ｂは、前記排
出管４０に介装されている。ドレイン管４１は、一端が
前記オーバーフロー部３５に連結され、他端が前記ドレ
イン受タンクに連結されている。Next, another high frequency cleaning method according to the present invention will be described in detail with reference to FIGS. 2 and 3. FIG.
FIG. 3 is a schematic view showing a cleaning apparatus used in the high-frequency cleaning method of the present invention, and FIG. 3 is a sectional view of the vicinity of the cleaning tank in FIG. Outer tank 3
1 is a diaphragm 3 made of, for example, a tantalum thin film near the middle.
2 is arranged, and water 33, for example, is contained on the upper side with the diaphragm 32 as the bottom. The vibrator 34 is attached to the lower surface of the diaphragm 32. A high-frequency oscillator (not shown) is connected to the vibrator 34. The cleaning tank 36 having the overflow portion 35 at the upper end is the outer tank 31.
Is installed at a desired distance from the diaphragm 32. A buffer tank 37, which is a cleaning liquid supply means, is connected to a lower side wall of the cleaning tank 36 through a pipe 38. The first solenoid valve 39a is interposed in the pipe 38. The cleaning liquid discharge pipe 40 has one end connected to the lower side wall of the cleaning tank 36 and the other end connected to a drain receiving tank (not shown). The second electromagnetic valve 39b is interposed in the discharge pipe 40. The drain pipe 41 has one end connected to the overflow portion 35 and the other end connected to the drain receiving tank.
【００１４】前述した図１と同様な構造のバー型高周波
振動ノズル４２は、前記洗浄槽３６の上方に配置されい
る。前記高周波振動ノズル４２は、図３の矢印に示すよ
うに前記洗浄槽３６内に収納される被洗浄物（例えば半
導体ウェハ）の外周の円弧に沿って往復動作する。一対
のシャワーノズル４３は、前記洗浄槽３６の上方に配置
されいる。洗浄液供給管４４は、２つに分岐され、一方
の分岐管は前記バッファタンク３７に連結され、他方の
分岐管は前記高周波振動ノズル４２および前記シャワー
ノズル４３に連結されている。第３、第４の電磁弁３９
ｃ、３９ｄは、前記各分岐管にそれぞれ介装されてい
る。なお、レベル計４５は、前記バッファタンク３７の
側壁に配置されている。The bar type high frequency vibrating nozzle 42 having the same structure as that shown in FIG. 1 is arranged above the cleaning tank 36. The high-frequency vibrating nozzle 42 reciprocates along the arc of the outer periphery of the object to be cleaned (for example, a semiconductor wafer) housed in the cleaning tank 36 as shown by the arrow in FIG. The pair of shower nozzles 43 is arranged above the cleaning tank 36. The cleaning liquid supply pipe 44 is branched into two, one branch pipe is connected to the buffer tank 37, and the other branch pipe is connected to the high frequency vibration nozzle 42 and the shower nozzle 43. Third and fourth solenoid valves 39
c and 39d are interposed in each of the branch pipes. The level meter 45 is arranged on the side wall of the buffer tank 37.
【００１５】前述した洗浄装置を用いて被洗浄物の高周
波洗浄方法を説明する。 （第１工程）まず、ボート４６に複数枚の被洗浄物（例
えば半導体ウェハ）４７を垂直に立てて配置し、前記ボ
ート４６を前記洗浄槽３６内に設置する。なお、前記被
洗浄物は、前記ボートに代えてカセットに収納してもよ
い。A method of high-frequency cleaning an object to be cleaned using the above-mentioned cleaning device will be described. (First Step) First, a plurality of objects to be cleaned (for example, semiconductor wafers) 47 are vertically arranged on the boat 46, and the boat 46 is installed in the cleaning tank 36. The object to be cleaned may be stored in a cassette instead of the boat.
【００１６】（第２工程）次いで、前記洗浄槽３６内に
前記バッファタンク３７から洗浄液（例えば純水）を配
管３８を通して供給する。洗浄液が前記ウェハ４７の少
なくとも上端位置まで供給された時点で図示しない高周
波発振器から前記外槽３１の振動板３２下面に取り付け
た振動子３４を駆動して前記振動板３２から前記外槽３
１内の純水３３を通して前記洗浄槽３６内の洗浄液に例
えば０．７〜５ＭＨｚの高周波音波を放射する。このよ
うな高周波音波を前記洗浄液に放射することにより、前
記洗浄槽３６内の複数枚のウェハ４７表面が洗浄される
と共に、前記ウェハ４７表面から除去された比較的大き
な汚染物は前記洗浄液と共に前記洗浄槽３６のオーバー
フロー部３５からオーバーフローされ、オーバーフロー
管４１を通して図示しないドレイン受タンクに排出され
る。(Second Step) Next, a cleaning liquid (for example, pure water) is supplied from the buffer tank 37 into the cleaning tank 36 through a pipe 38. When the cleaning liquid is supplied to at least the upper end position of the wafer 47, a vibrator 34 attached to the lower surface of the vibrating plate 32 of the outer tank 31 is driven from a high frequency oscillator (not shown) to drive the vibrating plate 32 to the outer tank 3
A high frequency sound wave of, for example, 0.7 to 5 MHz is radiated to the cleaning liquid in the cleaning tank 36 through the pure water 33 in 1. By irradiating the cleaning liquid with such high-frequency sound waves, the surfaces of the plurality of wafers 47 in the cleaning tank 36 are cleaned, and the relatively large contaminants removed from the surfaces of the wafers 47 are cleaned together with the cleaning liquid. It overflows from the overflow portion 35 of the cleaning tank 36 and is discharged to a drain receiving tank (not shown) through the overflow pipe 41.
【００１７】（第３工程）前記洗浄槽３６での高周波音
波による洗浄を所定時間行った後、前記第１電磁弁３９
ａを閉じて、前記バッファタンク３７からの洗浄液の供
給を停止する。(Third step) After cleaning the cleaning tank 36 with high frequency sound waves for a predetermined time, the first electromagnetic valve 39 is used.
By closing a, the supply of the cleaning liquid from the buffer tank 37 is stopped.
【００１８】（第４工程）次いで、前記高周波音波の放
射を続行しながら前記洗浄液排出管４０の第２電磁弁３
９ｂの開度調節を行って前記洗浄槽３６内の洗浄液を徐
々に排出する。同時に、前記洗浄液噴射手段である前記
バー型高周波振動ノズル４２および前記一対のシャワー
ノズル４３に洗浄液（例えば純水）を洗浄液供給管４４
を通して供給し、これらのノズル（ただし、高周波振動
ノズル４２は振動子を振動させる）４２、４３から前記
複数枚のウェハ４７に向けて洗浄液を噴射する。このよ
うな操作において、前記振動板３２の振動によって前記
ウェハ４７表面を高周波音波により洗浄する際の洗浄力
は前記洗浄液表面（大気との界面）ほど高くなる。した
がって、前記振動板３２の振動による高周波音波の放射
を続行しながら前記洗浄槽３６内の洗浄液を徐々に排出
して洗浄液の水位を前記垂直に立てて配置された前記ウ
ェハ４７の上端から下端に向かって移動させる、つまり
洗浄力の高い領域を前記ウェハ４７の上端から下端に向
かって移動させることにより、前記ウェハ４７表面全体
に付着した除去し難い汚染微粒子（パーティクル）を効
果的に洗浄することが可能になる。ただし、前述した洗
浄液の水位を下降させることにより前記ウェハ４７表面
が露出してパーティクルを付着しながら乾燥される恐れ
がある。このため、前記排出管４０を通して前記洗浄槽
３６内の洗浄液を排出すると同時に前記バー型高周波振
動ノズル４２および前記一対のシャワーノズル４３から
洗浄液を大気に露出した前記ウェハ４７部分に向けて噴
射することにより前記ウェハ４７表面を湿潤状態に保持
できると共に前記ウェハ４７表面に再付着したパーティ
クルを流下させることができる。(Fourth Step) Next, the second electromagnetic valve 3 of the cleaning liquid discharge pipe 40 is continued while continuing the emission of the high frequency sound waves.
By adjusting the opening of 9b, the cleaning liquid in the cleaning tank 36 is gradually discharged. At the same time, a cleaning liquid supply pipe 44 for supplying a cleaning liquid (for example, pure water) to the bar-type high-frequency vibration nozzle 42 and the pair of shower nozzles 43, which are the cleaning liquid ejecting means.
Through the nozzles (however, the high-frequency vibrating nozzle 42 vibrates the oscillator) 42, 43 to inject the cleaning liquid toward the plurality of wafers 47. In such an operation, the cleaning power when cleaning the surface of the wafer 47 with high frequency sound waves by the vibration of the vibration plate 32 becomes higher as the surface of the cleaning liquid (interface with the atmosphere). Therefore, the cleaning liquid in the cleaning tank 36 is gradually discharged while continuing to radiate high frequency sound waves due to the vibration of the vibrating plate 32, so that the water level of the cleaning liquid rises vertically from the upper end to the lower end of the wafer 47. By moving the region having a high cleaning power from the upper end of the wafer 47 toward the lower end, thereby effectively cleaning the contaminant fine particles (particles) that are hard to remove and adhere to the entire surface of the wafer 47. Will be possible. However, by lowering the water level of the cleaning liquid, the surface of the wafer 47 may be exposed and particles may be adhered and dried. Therefore, the cleaning liquid in the cleaning tank 36 is discharged through the discharge pipe 40, and at the same time, the cleaning liquid is sprayed from the bar type high frequency vibration nozzle 42 and the pair of shower nozzles 43 toward the wafer 47 portion exposed to the atmosphere. As a result, the surface of the wafer 47 can be kept in a wet state, and the particles redeposited on the surface of the wafer 47 can flow down.
【００１９】（第５工程）次いで、前記洗浄槽３６内の
洗浄液が殆ど除去された時点で、前記各ノズル４２、４
３からの洗浄液の供給を停止、前記洗浄槽３６内のウェ
ハ４７をボート４６と一緒に取り出す。(Fifth Step) Next, when most of the cleaning liquid in the cleaning tank 36 is removed, each of the nozzles 42, 4 is
The supply of the cleaning liquid from 3 is stopped, and the wafer 47 in the cleaning tank 36 is taken out together with the boat 46.
【００２０】前記第１工程で洗浄槽内に配置される被洗
浄物としては、前記半導体ウェハの他に、液晶ガラス基
板、磁気ディスク等を用いることができる。前記第４工
程での洗浄液の噴射は、前記バー型高周波振動ノズル４
２および前記一対のシャワーノズル４３のいずれか一方
を用いて行ってもよい。As the object to be cleaned placed in the cleaning tank in the first step, a liquid crystal glass substrate, a magnetic disk or the like can be used in addition to the semiconductor wafer. The cleaning liquid is sprayed in the fourth step by the bar type high frequency vibration nozzle 4
Alternatively, one of the shower nozzle 43 and the shower nozzle 43 may be used.
【００２１】前記第４工程でドレイン受タンクに排出さ
れた洗浄液は、その一部もしくは全部をフィルタ、特に
精密フィルタを通して前記バッファタンクに戻すように
してもよい。The cleaning liquid discharged to the drain receiving tank in the fourth step may be partially or wholly returned to the buffer tank through a filter, particularly a precision filter.
【００２２】以上説明した本発明に係わる別の高周波洗
浄方法によれば、複数枚の被洗浄物表面に付着したパー
ティクルを含む汚染物を一度にかつ効果的に洗浄するこ
とが可能で、かつ洗浄中および洗浄後の洗浄液からの取
出し時に被洗浄物表面にパーティクルが再付着するのを
防止して精密洗浄を行うことができる。According to another high-frequency cleaning method of the present invention described above, it is possible to effectively and simultaneously clean contaminants containing particles attached to the surfaces of a plurality of objects to be cleaned. It is possible to prevent re-adhesion of particles to the surface of the object to be cleaned at the time of taking out from the cleaning liquid during and after cleaning, thereby performing precision cleaning.
【００２３】[0023]
【実施例】以下、本発明の実施例を前述した図面を参照
して詳細に説明する。 （実施例１）図１に示すようにカセット２１内に鉛筆を
擦りつけて両面を真黒にした例えば１０枚の半導体ウェ
ハ２６を垂直に立てて収納した後、バー型高周波振動ノ
ズル２２のノズル筐体２４内に配置した振動子を高周波
発振器により振動し、前記振動子に取着された振動板を
振動させると共に洗浄液供給管２５を通して純水を前記
ノズル筐体２４内に供給した。このような振動板の振動
により前記ノズル筐体２４の吐出口２３から１．７ＭＨ
ｚの高周波音波に乗った純水２７を前記吐出口２３の下
方に位置する前記カセット２１内に収納された各半導体
ウェハ２６に向けて噴射しながら前記高周波振動ノズル
２２を図１の矢印に示すように前記ウェハ２６の外周の
円弧に沿って１分間当たり６回往復動作させる動作を２
分間行って洗浄した。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings. (Embodiment 1) As shown in FIG. 1, for example, ten semiconductor wafers 26 whose both surfaces are blackened by rubbing a pencil into a cassette 21 are vertically stood and stored, and then the nozzle housing of the bar type high frequency vibration nozzle 22 is housed. A vibrator disposed inside the body 24 was vibrated by a high frequency oscillator to vibrate the diaphragm attached to the vibrator and pure water was supplied into the nozzle housing 24 through the cleaning liquid supply pipe 25. The vibration of the vibrating plate causes 1.7 MH from the discharge port 23 of the nozzle housing 24.
The high-frequency vibrating nozzle 22 is indicated by an arrow in FIG. 1 while jetting pure water 27 riding on the high-frequency sound wave of z toward each semiconductor wafer 26 contained in the cassette 21 located below the discharge port 23. 2 reciprocating motions per minute along the arc of the outer periphery of the wafer 26
Washed for a minute.
【００２４】洗浄後の１０枚の半導体ウェハをカセット
から取り出し、洗浄状態を調べた。その結果、前記各ウ
ェハ両面は鉛筆による汚染物が殆どほ除去されていたこ
とがわかった （実施例２）まず、ボート４６に鉛筆を擦りつけて両面
を真黒にした例えば１０枚の半導体ウェハ４７を垂直に
立てて配置し、前記ボート４６を前記洗浄槽３６内に設
置した。つづいて、前記洗浄槽３６内に前記バッファタ
ンク３７から純水を配管３８を通して供給した。洗浄液
が前記ウェハ４７の上端位置まで供給された時点で図示
しない高周波発振器から外槽３１の振動板３２下面に取
り付けた振動子３４を駆動して前記振動板３２から前記
外槽３１内の純水３３を通して前記洗浄槽３６内の洗浄
液に例えば１ＭＨｚの高周波音波を放射した。この時、
前記洗浄液の供給が続行されているため、純水は洗浄槽
３６のオーバーフロー部３５からオーバーフローされ、
オーバーフロー管４１を通して図示しないドレイン受タ
ンクに排出された。The ten semiconductor wafers after cleaning were taken out from the cassette and the cleaning state was examined. As a result, it was found that the contaminants on the both surfaces of each wafer were almost completely removed by the pencil (Example 2). First, for example, ten semiconductor wafers 47 whose surfaces were blackened by rubbing the pencil on the boat 46 were used. Was placed vertically, and the boat 46 was installed in the cleaning tank 36. Subsequently, pure water was supplied from the buffer tank 37 into the cleaning tank 36 through a pipe 38. When the cleaning liquid is supplied to the upper end position of the wafer 47, a vibrator 34 attached to the lower surface of the vibrating plate 32 of the outer tank 31 is driven by a high frequency oscillator (not shown) to drive the pure water in the outer tank 31 from the vibrating plate 32. High frequency sound waves of 1 MHz, for example, were radiated to the cleaning liquid in the cleaning tank 36 through 33. This time,
Since the supply of the cleaning liquid is continued, pure water overflows from the overflow portion 35 of the cleaning tank 36,
It was discharged to a drain receiving tank (not shown) through the overflow pipe 41.
【００２５】次いで、前記洗浄槽３６での高周波音波に
よる洗浄を２分間行った後、第１電磁弁３９ａを閉じ
て、前記バッファタンク３７からの洗浄液の供給を停止
した。つづいて、前記高周波音波の放射を続行しながら
洗浄液排出管４０の第２電磁弁３９ｂの開度調節を行っ
て前記洗浄槽３６内の洗浄液をその水位が２５０ｍｍ／
分の速度で下がるように徐々に排出した。同時に、前記
洗浄液噴射手段であるバー型高周波振動ノズル４２に純
水を洗浄液供給管４４を通して供給すると共に振動子を
振動させて前記ウェハ４７に向けて純水を噴射した。Then, after cleaning the cleaning tank 36 with high frequency acoustic waves for 2 minutes, the first electromagnetic valve 39a was closed and the supply of the cleaning liquid from the buffer tank 37 was stopped. Subsequently, while continuing to radiate the high frequency sound waves, the opening degree of the second electromagnetic valve 39b of the cleaning liquid discharge pipe 40 is adjusted so that the cleaning liquid in the cleaning tank 36 has a water level of 250 mm /
It was gradually discharged so as to descend at a rate of minutes. At the same time, deionized water was jetted toward the wafer 47 by supplying deionized water through the washing liquid supply pipe 44 to the bar-type high-frequency vibration nozzle 42, which is the washing liquid ejecting means, and vibrating the vibrator.
【００２６】次いで、前記洗浄槽３６内の純水が殆ど除
去された時点で、前記ノズル４２からの純水の供給を停
止し、前記洗浄槽３６内のウェハ４７をボート４６と一
緒に取り出した。Next, when most of the pure water in the cleaning tank 36 is removed, the supply of pure water from the nozzle 42 is stopped and the wafer 47 in the cleaning tank 36 is taken out together with the boat 46. .
【００２７】洗浄後の１０枚の半導体ウェハをボートか
ら取り出し、洗浄状態を調べた。その結果、前記各ウェ
ハ両面は鉛筆による汚染物が完全に除去され、極めて清
浄な状態であることがわかった。Ten semiconductor wafers after cleaning were taken out from the boat and the cleaning state was examined. As a result, it was found that contaminants from the pencils were completely removed on both surfaces of each wafer, and the wafers were in an extremely clean state.
【００２８】[0028]
【発明の効果】以上詳述したように、本発明によれば複
数枚の被洗浄物を一度に洗浄することが可能で、かつ洗
浄中および洗浄後の洗浄液からの取出し時に被洗浄物表
面にパーティクルが再付着するのを防止して精密洗浄を
行うことができ、半導体装置、液晶表示装置や磁気ディ
スクの製造等に有効な高周波洗浄方法を提供することが
できる。As described in detail above, according to the present invention, it is possible to clean a plurality of objects to be cleaned at one time, and to clean the surface of the object to be cleaned during and after cleaning. It is possible to prevent re-adhesion of particles and perform precision cleaning, and it is possible to provide a high-frequency cleaning method effective for manufacturing semiconductor devices, liquid crystal display devices, magnetic disks, and the like.
【図１】本発明に係わる高周波洗浄方法に用いられる洗
浄装置を示す斜視図。FIG. 1 is a perspective view showing a cleaning apparatus used in a high frequency cleaning method according to the present invention.
【図２】本発明に係わる別の高周波洗浄方法に用いられ
る洗浄装置を示す概略図。FIG. 2 is a schematic view showing a cleaning device used in another high-frequency cleaning method according to the present invention.
【図３】図２の洗浄槽付近の断面図。3 is a cross-sectional view of the vicinity of the cleaning tank of FIG.
【図４】従来の洗浄方法を説明するための斜視図。FIG. 4 is a perspective view for explaining a conventional cleaning method.
【図５】従来の別の洗浄方法を説明するための斜視図。FIG. 5 is a perspective view for explaining another conventional cleaning method.
２１…カセット、 ２２、４２…バー型高周波振動ノズル、 ２６、４７…被洗浄物、 ３４…振動し、 ３５…オーバーフロー部、 ３６…洗浄槽、 ３７…バッファタンク、 ４３…シャワーノズル、 ４６…ボート。 21 ... Cassette, 22, 42 ... Bar type high frequency vibrating nozzle, 26, 47 ... Cleaning object, 34 ... Vibrating, 35 ... Overflow part, 36 ... Cleaning tank, 37 ... Buffer tank, 43 ... Shower nozzle, 46 ... Boat .
Claims (3)
体と、この筐体の前記吐出口と反対側の面に配置され、
振動子が取着された振動板と、前記吐出口および前記振
動板が取り付けられた面を除く前記筐体面に連結された
洗浄液供給管と、前記振動子を駆動するための高周波発
振器とを具備したバー型高周波振動ノズルを用いて複数
枚の被洗浄物を洗浄するに際し、前記複数の被洗浄物を
垂直に配置し、これら被洗浄物の上方に前記振動ノズル
を前記細長状の洗浄液吐出口が対向すると共にそれら被
洗浄物の配列方向に沿うように配置し、前記振動ノズル
の前記吐出口から高周波音波に乗った洗浄液を前記各被
洗浄物に向けて噴射しながら前記振動ノズルを前記被洗
浄物の幅方向に往復動作させることを特徴とする高周波
洗浄方法。1. A nozzle casing having an elongated cleaning liquid outlet, and a nozzle casing arranged on a surface of the casing opposite to the outlet.
A vibrating plate to which a vibrator is attached, a cleaning liquid supply pipe connected to the housing surface excluding the surface on which the discharge port and the vibrating plate are attached, and a high frequency oscillator for driving the vibrator. When cleaning a plurality of objects to be cleaned using the bar type high frequency vibrating nozzle, the plurality of objects to be cleaned are vertically arranged, and the vibrating nozzle is provided above the objects to be cleaned and the elongated cleaning liquid discharge port is provided. Are arranged so as to face each other and arranged along the arrangement direction of the objects to be cleaned. A high-frequency cleaning method comprising reciprocating the width of a cleaning object.
ー部を有する洗浄槽と、この洗浄槽の底部に配置され、
前記洗浄槽内の洗浄液に高周波振動を付与するための振
動板と、この振動板の下面に取着された振動子と、この
振動子を駆動するための高周波発振器と、前記洗浄槽の
上方に配置された洗浄液噴射手段と、前記洗浄槽内に洗
浄液を供給する洗浄液供給手段と、前記洗浄液の底部付
近に連結された洗浄液排出管とを具備した洗浄装置を用
いて前記洗浄槽内に配置された被洗浄物を洗浄する方法
であって、 前記洗浄槽内に前記被洗浄物を垂直に立てて配置する工
程と、 前記洗浄槽内に前記洗浄液供給手段により洗浄液を供給
する工程と、 前記被洗浄物の少なくとも上端位置まで洗浄液が供給さ
れた時点で前記振動子を駆動して前記振動板から前記洗
浄液に高周波音波を放射しながら前記洗浄液を前記洗浄
槽のオーバーフロー部からオーバーフローさせる工程
と、 前記洗浄液供給手段からの洗浄液の供給を停止した後、
前記高周波音波の放射を続行しながら前記洗浄液排出管
を通して前記洗浄槽内の洗浄液を徐々に排出すると同時
に前記洗浄液噴射手段から前記被洗浄物に向けて洗浄液
を噴射する工程とを具備したことを特徴とする高周波洗
浄方法。2. A cleaning tank containing a cleaning liquid and having an overflow portion at an upper end, and a cleaning tank disposed at a bottom portion of the cleaning tank,
A vibration plate for applying high-frequency vibration to the cleaning liquid in the cleaning tank, a vibrator attached to the lower surface of the vibration plate, a high-frequency oscillator for driving the vibrator, and a vibrator above the cleaning tank. It is arranged in the cleaning tank by using a cleaning device equipped with a cleaning liquid jetting means arranged, a cleaning liquid supply means for supplying the cleaning liquid into the cleaning tank, and a cleaning liquid discharge pipe connected near the bottom of the cleaning liquid. A method of cleaning an object to be cleaned, the step of vertically arranging the object to be cleaned in the cleaning tank; the step of supplying a cleaning liquid into the cleaning tank by the cleaning liquid supply means; When the cleaning liquid is supplied to at least the upper end position of the cleaning product, the vibrator is driven to irradiate the cleaning liquid with high-frequency sound waves to the cleaning liquid, and the cleaning liquid is overflowed from the overflow portion of the cleaning tank. A step of, after stopping the supply of the cleaning liquid from the cleaning liquid supply means,
A step of gradually discharging the cleaning liquid in the cleaning tank through the cleaning liquid discharge pipe while continuously radiating the high frequency sound waves, and at the same time spraying the cleaning liquid from the cleaning liquid spraying means toward the object to be cleaned. High frequency cleaning method.
を有するノズル筐体と、この筐体の前記吐出口と反対側
の面に配置され、振動子が取着された振動板と、前記吐
出口および前記振動板が取り付けられた面を除く前記筐
体面に連結された洗浄液供給管と、前記振動子を駆動す
るための高周波発振器とを具備したバー型高周波振動ノ
ズル；から選ばれるいずれか一方もしくは両者であるこ
とを特徴とする請求項２項記載の高周波洗浄方法。3. The cleaning liquid jetting means is disposed on a nozzle casing having a cleaning liquid shower nozzle; and an elongated cleaning liquid discharge port, and a surface of the casing opposite to the discharge port. A bar-type high frequency equipped with a vibrating plate attached thereto, a cleaning liquid supply pipe connected to the casing surface excluding the surface on which the discharge port and the vibrating plate are attached, and a high frequency oscillator for driving the vibrator. 3. The high-frequency cleaning method according to claim 2, wherein one or both of the vibration nozzles are selected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8015260A JP2883844B2 (en) | 1996-01-31 | 1996-01-31 | High frequency cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8015260A JP2883844B2 (en) | 1996-01-31 | 1996-01-31 | High frequency cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09206715A true JPH09206715A (en) | 1997-08-12 |
| JP2883844B2 JP2883844B2 (en) | 1999-04-19 |
Family
ID=11883891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8015260A Expired - Fee Related JP2883844B2 (en) | 1996-01-31 | 1996-01-31 | High frequency cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2883844B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6619301B2 (en) * | 1999-12-17 | 2003-09-16 | Sharp Kabushiki Kaisha | Ultrasonic processing device and electronic parts fabrication method using the same |
| CN105921460A (en) * | 2016-06-20 | 2016-09-07 | 苏州市灵通玻璃制品有限公司 | Glass cleaning device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61179742U (en) * | 1985-04-30 | 1986-11-10 | ||
| JPH05269450A (en) * | 1992-03-26 | 1993-10-19 | Kokusai Denki Erutetsuku:Kk | Injection type ultrasonic cleaning apparatus |
| JPH05291222A (en) * | 1992-04-10 | 1993-11-05 | Nippon Steel Corp | Method and apparatus for rinsing |
| JPH06349803A (en) * | 1993-06-04 | 1994-12-22 | Nec Corp | Semiconductor substrate cleaning device |
-
1996
- 1996-01-31 JP JP8015260A patent/JP2883844B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61179742U (en) * | 1985-04-30 | 1986-11-10 | ||
| JPH05269450A (en) * | 1992-03-26 | 1993-10-19 | Kokusai Denki Erutetsuku:Kk | Injection type ultrasonic cleaning apparatus |
| JPH05291222A (en) * | 1992-04-10 | 1993-11-05 | Nippon Steel Corp | Method and apparatus for rinsing |
| JPH06349803A (en) * | 1993-06-04 | 1994-12-22 | Nec Corp | Semiconductor substrate cleaning device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6619301B2 (en) * | 1999-12-17 | 2003-09-16 | Sharp Kabushiki Kaisha | Ultrasonic processing device and electronic parts fabrication method using the same |
| CN105921460A (en) * | 2016-06-20 | 2016-09-07 | 苏州市灵通玻璃制品有限公司 | Glass cleaning device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2883844B2 (en) | 1999-04-19 |
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