JPH0917833A - Evaluation method and regeneration method for semiconductor wafer, and its device - Google Patents
Evaluation method and regeneration method for semiconductor wafer, and its deviceInfo
- Publication number
- JPH0917833A JPH0917833A JP18630095A JP18630095A JPH0917833A JP H0917833 A JPH0917833 A JP H0917833A JP 18630095 A JP18630095 A JP 18630095A JP 18630095 A JP18630095 A JP 18630095A JP H0917833 A JPH0917833 A JP H0917833A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor wafer
- type
- infrared absorption
- absorption spectrum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、デバイスプロセスで
使用され不用となるなど再生を目的とした半導体ウェー
ハの再生方法に係り、プロセス履歴により種々異なる膜
が積層成膜されるが、種々の膜を除去して再生するに際
し、成膜されている膜種類を赤外吸収スペクトル分析に
て推定し、いくつかのパターンに仕分してそれぞれに適
した再生処理を行い、再生ラインへの金属の混入、汚染
を防ぎ、これらの半導体ウェーハ表面の形成膜を効率よ
く除去して再生半導体ウェーハを製造する半導体ウェー
ハの評価方法及び再生方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for remanufacturing a semiconductor wafer which is used in a device process and is not used, and is intended to be remanufactured. When removing and regenerating, the type of film that has been formed is estimated by infrared absorption spectrum analysis, sorted into several patterns, and a suitable reprocessing process is performed, and metal is mixed into the replay line. The present invention relates to a method for evaluating a semiconductor wafer and a method for reproducing a semiconductor wafer, which prevents contamination and efficiently removes the formed film on the surface of the semiconductor wafer to manufacture a recycled semiconductor wafer.
【０００２】[0002]
【従来の技術】シリコンインゴットからスライスされ、
研磨、洗浄されて仕上げられた半導体ウェーハは、各種
のデバイス製造工程に供されるが、プロセスは熱酸化、
熱拡散、ＣＶＤ、パターニング、配線等からなってお
り、デバイスにより各々のプロセスにおける半導体ウェ
ーハの表面に成膜される形成膜種は処理履歴によってそ
れぞれ異なっている。2. Description of the Related Art Sliced from a silicon ingot,
Semiconductor wafers that have been polished, cleaned, and finished are used for various device manufacturing processes, but the process is thermal oxidation,
It consists of thermal diffusion, CVD, patterning, wiring, etc., and the type of film formed on the surface of the semiconductor wafer in each process by the device differs depending on the processing history.
【０００３】各種のデバイスプロセスで使用され不用と
なった基板は従来、廃棄されることがほとんどであり、
再生が試みられる場合、いずれのプロセスを経ていて
も、研磨によりすべての形成膜を除去し、その後、従来
の半導体ウェーハの製造法と同様の工程で処理するとい
う方法で行われていた。Substrates that are no longer needed after being used in various device processes are usually discarded.
When the reproduction is attempted, no matter which process is performed, all the formed films are removed by polishing, and then the same process as the conventional semiconductor wafer manufacturing method is performed.
【０００４】[0004]
【発明が解決しようとする課題】半導体ウェーハの大口
径化に伴い半導体ウェーハ１枚の単価が上昇し、プロセ
スで使用されて発生する不用半導体ウェーハなどを一様
に廃棄するのは大きな損失であると考えられる。半導体
ウェーハによってはある程度用途は限定されるものの再
生半導体ウェーハ製造への需要は今後高まることが予想
され、又、かかる再生が一般化した際には、再生時のロ
ーコスト化が今後の課題の一つになると考えられる。The unit price of one semiconductor wafer increases as the diameter of the semiconductor wafer increases, and it is a great loss to uniformly dispose of unnecessary semiconductor wafers that are used in the process. it is conceivable that. Although the use of semiconductor wafers is limited to some extent, demand for recycled semiconductor wafer manufacturing is expected to increase in the future, and when such recycling becomes popular, cost reduction during recycling is one of the future challenges. It is believed that
【０００５】しかし、上記従来の方法では処理効率が悪
いばかりか金属膜等によるラインの金属汚染等が容易に
起こる可能性も高く、ライン全体を損なうことになりか
ねない問題があった。そこで、再生を目的とした半導体
ウェーハその他の再生に際して、各半導体ウェーハを金
属膜の有無および形成膜種別に仕分けすることが可能で
あれば、形成膜種別の処理工程が設定できると考えられ
るが、効率よくかかる各半導体ウェーハを形成膜種別に
分別する方法が提案されていない。However, the above-mentioned conventional method has a problem that not only the treatment efficiency is poor, but also the metal contamination of the line due to the metal film or the like is likely to occur and the entire line may be damaged. Therefore, when reclaiming semiconductor wafers or the like for the purpose of reclaiming, if it is possible to sort each semiconductor wafer into the presence or absence of a metal film and the type of forming film, it is considered that the treatment process of the type of forming film can be set. No method has been proposed for efficiently classifying the respective semiconductor wafers according to the type of formed film.
【０００６】この発明は、デバイスプロセスにおいて発
生する製品とならない不用半導体ウェーハの再生方法に
関して、各半導体ウェーハを金属膜の有無および形成膜
種別に仕分けするための評価方法と装置を提案すること
を目的とし、さらに、分別した不用半導体ウェーハをラ
インの金属汚染等の問題なく効率よく再生半導体ウェー
ハを製造することが可能な半導体ウェーハの再生方法の
提供を目的としている。An object of the present invention is to propose an evaluation method and apparatus for sorting each semiconductor wafer according to the presence / absence of a metal film and the type of film formed, regarding a method for recycling an unnecessary semiconductor wafer that does not become a product generated in a device process. Further, it is an object of the present invention to provide a method for remanufacturing a semiconductor wafer capable of efficiently manufacturing a reclaimed semiconductor wafer from a sorted waste semiconductor wafer without problems such as metal contamination of a line.
【０００７】[0007]
【課題を解決するための手段】発明者は、半導体ウェー
ハ表面の金属膜の有無並びに形成膜種の評価が可能にな
る測定方法を目的に種々検討した結果、一般に、Ｘ線を
用いた分折にて金属膜の有無の判断が可能であることが
知られているが、さらに赤外吸収スペクトル分析法にお
いても金属膜の有無を判別できることを見いだし、赤外
吸収スペクトル分析法で再生を目的とした半導体ウェー
ハの赤外吸収スペクトルを測定し、その赤外吸収スペク
トルと予め設定した各形成膜種の標準スペクトルとの比
較にて金属膜の有無及び形成膜種を判別、評価すること
により、容易に各形成膜種別に半導体ウェーハを仕分け
可能であることを知見した。さらに、発明者は、上記半
導体ウェーハの評価に従って、分別した半導体ウェーハ
を形成膜種別に設定した処理工程にて再生半導体ウェー
ハとなすことにより、従来の半導体ウェーハの製造法と
同様のラインでも金属汚染を防止でき、安価に再生半導
体ウェーハを製造でき、半導体ウェーハの直径が２００
ｍｍ以上である場合に特に有効であることを知見し、こ
の発明を完成した。As a result of various examinations by the inventor for the purpose of a measuring method capable of evaluating the presence or absence of a metal film on the surface of a semiconductor wafer and the type of film formed, generally, a fractional analysis using X-rays is performed. It is known that it is possible to determine the presence or absence of a metal film in, but it was also found that the presence or absence of a metal film can be determined by the infrared absorption spectrum analysis method as well. By measuring the infrared absorption spectrum of the semiconductor wafer, and comparing the infrared absorption spectrum with the preset standard spectrum of each formed film type, the presence or absence of the metal film and the formed film type can be determined and evaluated easily. It was found that it is possible to sort the semiconductor wafers according to the type of formed film. Further, according to the evaluation of the above semiconductor wafer, the inventor uses the separated semiconductor wafer as a recycled semiconductor wafer in the processing step set for the formation film type, so that the same line as in the conventional semiconductor wafer manufacturing method can be used for metal contamination. Can be manufactured at low cost, and the diameter of the semiconductor wafer can be 200
The present invention has been completed by finding that it is particularly effective when it is at least mm.
【０００８】すなわち、この発明は、再生を目的とした
半導体ウェーハに対して赤外吸収スペクトル分析を行い
得た赤外吸収スペクトルを、予め設定された種々の形成
膜種を有する半導体ウェーハの赤外吸収スペクトルと比
較し、半導体ウェーハ表面に形成された膜種を推定して
予め設定された形成膜種別に類別することを特徴とする
半導体ウェーハの評価方法である。That is, according to the present invention, an infrared absorption spectrum obtained by performing an infrared absorption spectrum analysis on a semiconductor wafer for the purpose of reproduction is used as an infrared spectrum of a semiconductor wafer having various preset film formation species. It is a method for evaluating a semiconductor wafer, characterized by estimating a film type formed on a surface of a semiconductor wafer by comparing with an absorption spectrum and classifying the film into a preset film type.
【０００９】また、この発明は、再生を目的とした半導
体ウェーハに対して赤外光を照射して赤外吸収スペクト
ルを測定する赤外吸収測定装置と、予め設定した種々の
形成膜種を有する半導体ウェーハの赤外吸収スペクトル
を記憶する記憶手段と、該測定装置からの赤外吸収スペ
クトルと比較して半導体ウェーハ表面に形成された膜種
を推定して予め設定された形成膜種別に類別する演算手
段と、この形成膜種別に半導体ウェーハを分別するため
分別装置を制御する制御手段とを有する演算装置と、制
御手段の指示に従って各形成膜種別に半導体ウェーハを
搬送仕分けして収納する搬送部と収納部を有する分別装
置とからなることを特徴とする半導体ウェーハの評価装
置を併せて提案する。Further, the present invention has an infrared absorption measuring device for irradiating a semiconductor wafer for the purpose of reproduction with infrared light to measure an infrared absorption spectrum, and various preset film formation types. A storage unit that stores the infrared absorption spectrum of the semiconductor wafer, and estimates the film type formed on the surface of the semiconductor wafer by comparison with the infrared absorption spectrum from the measuring device, and classifies the film types into preset film types. An arithmetic unit having an arithmetic unit and a control unit for controlling the sorting device for sorting the semiconductor wafers according to the type of the formed film, and a transfer unit for sorting and storing the semiconductor wafers for each type of the formed film according to the instruction of the control unit. Also proposed is a semiconductor wafer evaluation device, which is characterized in that it comprises a sorting device having a storage part.
【００１０】さらに、この発明は、再生を目的とした半
導体ウェーハに対して、赤外吸収スペクトル分析を行
い、半導体ウェーハ表面に形成された膜種を推定して、
予め設定された形成膜種別に分別し、該形成膜種に応じ
て、再生不能、レジスト剥離工程、酸化膜エッチング、
その他膜エッチング、研磨、鏡面研磨、洗浄の各工程を
選択実施して半導体ウェーハを再生することを特徴とす
る半導体ウェーハの再生方法を併せて提案する。また、
上記の構成において、半導体ウェーハを分別後に、形成
膜種に応じて設定された膜除去工程を連続して行う形成
膜種毎の再生処理装置に送る半導体ウェーハの再生方法
を提案する。Further, according to the present invention, a semiconductor wafer intended for reproduction is subjected to infrared absorption spectrum analysis to estimate the film species formed on the surface of the semiconductor wafer,
The film is classified according to the type of the formed film which is set in advance, and depending on the type of the formed film, the reproduction is impossible, the resist stripping step, the oxide film etching,
In addition, a method for reclaiming a semiconductor wafer is proposed, in which each step of film etching, polishing, mirror polishing, and cleaning is selectively performed to reclaim the semiconductor wafer. Also,
In the above structure, a method for reclaiming a semiconductor wafer is proposed after the semiconductor wafer is sorted and then sent to a reclaiming apparatus for each film formation type that continuously performs a film removal step set according to the film formation type.
【００１１】また、この発明は、半導体ウェーハに対し
て赤外光を照射して赤外吸収スペクトルを測定する赤外
吸収測定装置と、予め設定した種々の形成膜種を有する
半導体ウェーハの赤外吸収スペクトルを記憶する記憶手
段と、該測定装置からの赤外吸収スペクトルと比較して
半導体ウェーハ表面に形成された膜種を推定して予め設
定された形成膜種に類別する演算手段と、この形成膜種
別に半導体ウェーハを分別するため分別装置を制御する
制御手段とを有する演算装置と、制御手段の指示に従っ
て各形成膜種別に半導体ウェーハを搬送仕分けして収納
する搬送部と収納部を有する分別装置と、分別収納され
た形成膜種別の半導体ウェーハに該種別に応じて選択し
た工程を施すため、再生不能、レジスト剥離装置、酸化
膜エッチング装置、その他膜エッチング装置、研磨装
置、鏡面研磨装置、洗浄装置を有し、このうち選定した
装置へ順次送る搬送部と搬送部を制御する制御手段を有
する再生処理装置とを有することを特徴とする半導体ウ
ェーハの再生装置を提案する。また、上記構成におい
て、半導体ウェーハを分別後に、形成膜種に応じて設定
された膜除去工程を連続して行う形成膜種別毎の再生処
理装置を有する半導体ウェーハの再生装置を併せて提案
する。The present invention also relates to an infrared absorption measuring device for irradiating a semiconductor wafer with infrared light to measure an infrared absorption spectrum, and an infrared absorption of a semiconductor wafer having various preset film formation species. Storage means for storing the absorption spectrum, and computing means for estimating the film type formed on the surface of the semiconductor wafer by comparing with the infrared absorption spectrum from the measuring device and classifying the film type into a preset film type, It has an arithmetic unit having a control unit for controlling the sorting apparatus for sorting the semiconductor wafers according to the type of formed film, and a transport unit and a storage unit for transporting and sorting the semiconductor wafers for each type of the deposited film according to the instruction of the control unit. Separation equipment, and because the semiconductor wafers of the formed film type sorted and stored separately are subjected to the process selected according to the type, unreproducible, resist stripping device, oxide film etching device In addition, a semiconductor having a film etching device, a polishing device, a mirror polishing device, and a cleaning device, and a transporting unit for sequentially sending to the selected device, and a recycling processing device having a control means for controlling the transporting unit. We propose a wafer reclamation device. In addition, in the above configuration, a semiconductor wafer reclaiming apparatus having a reclaiming apparatus for each type of formed film that continuously performs a film removing process set according to the type of film to be formed after separating the semiconductor wafer is also proposed.
【００１２】[0012]
【作用】この発明は、赤外吸収スペクトル分析法で再生
を目的とした被検査半導体ウェーハの赤外吸収スペクト
ルを測定し、その赤外吸収スペクトルと予め設定した各
形成膜種の標準スペクトルとの比較にて、半導体ウェー
ハ表面の金属膜の有無並びに成膜された形成膜種を判別
する評価方法を特徴とする。According to the present invention, the infrared absorption spectrum of a semiconductor wafer to be inspected for the purpose of reproduction is measured by the infrared absorption spectrum analysis method, and the infrared absorption spectrum and the preset standard spectrum of each formed film species are measured. The comparison is characterized by an evaluation method for determining the presence or absence of a metal film on the surface of a semiconductor wafer and the type of film formed.
【００１３】また、この発明は、上記の評価方法にて再
生を目的とした不用半導体ウェーハにおいて、金属膜の
有無を判別し、さらに正確に形成膜種別毎に半導体ウェ
ーハを仕分けし、形成膜種別に設定した再生処理工程を
適用することを特徴とし、この発明による再生方法は、
形成膜種別に仕分けしたことから、半導体ウェーハに対
する無駄な処理工程を省き効率的及び迅速な再生処理工
程を組むことができ、安価に短期間で再生半導体ウェー
ハの製造を行うことができる。Further, according to the present invention, in the unnecessary semiconductor wafer for the purpose of reclaiming by the above-mentioned evaluation method, the presence or absence of a metal film is discriminated, and the semiconductor wafers are sorted more accurately by the type of the formed film. The reproduction method according to the present invention is characterized by applying the reproduction processing step set to
Since the semiconductor wafers are sorted according to the type of formed film, wasteful processing steps for the semiconductor wafers can be omitted and efficient and rapid recycling processing steps can be assembled, and the recycled semiconductor wafers can be manufactured inexpensively in a short period of time.
【００１４】この発明において、半導体ウェーハの評価
方法は、赤外吸収スペクトル分析にて測定された図２に
示すごとき赤外透過・吸収スペクトル、または測定され
た赤外吸収スペクトルと、不純物酸素及び不純物炭素及
び各種表面膜を検出下限以下しか含まないシリコン標準
試料の吸収スペクトルから得られる図３に示すごとき差
赤外吸収スペクトルと、予め設定し測定した各種形成膜
種の標準スペクトルとを比較検討することにより、実行
される。In the present invention, the method for evaluating a semiconductor wafer is the infrared transmission / absorption spectrum as shown in FIG. 2 measured by infrared absorption spectrum analysis, or the measured infrared absorption spectrum and impurities oxygen and impurities. The difference infrared absorption spectrum as shown in FIG. 3 obtained from the absorption spectrum of a silicon standard sample containing carbon and various surface films below the lower limit of detection is compared with the standard spectra of various formed film types which are preset and measured. It is executed by
【００１５】詳述すると、被測定半導体ウェーハの赤外
吸収スペクトルと各形成膜別の標準スペクトルとの比較
は、例えば、標準スペクトルの特徴的な吸収ピークとピ
ーク位置及び形状を比較検索することにより、該当形成
膜種を判別するもので、実施例のごとく、赤外吸収スペ
クトル分析装置と予め設定し測定した各種形成膜種の標
準スペクトルを記憶し比較検討するようプログラムされ
たＣＰＵユニットを用いることが望ましい。More specifically, the infrared absorption spectrum of the semiconductor wafer to be measured and the standard spectrum of each formed film can be compared, for example, by comparing and searching the characteristic absorption peak, peak position and shape of the standard spectrum. For determining the type of film to be formed, as in the embodiment, use an infrared absorption spectrum analyzer and a CPU unit programmed to store and compare standard spectra of various types of film to be formed that have been preset and measured. Is desirable.
【００１６】例えば、金属膜有無の検出は、赤外透過ス
ペクトルとしては透過光がほとんどゼロか測定不可のも
の、または特定範囲の透過率が金属膜を全く含まない半
導体ウェーハよりも透過率の小さいものを検出すること
により行われる。また、赤外光は金属膜を透過しないた
め金属膜の面積の増加に反比例して赤外光の透過率は減
少することから、透過率の減少によっても金属膜の有無
をおおよそ判断することができる。ただし、この透過率
は半導体ウェーハの種類により若干異なるため、条件設
定などに注意が必要である。For example, the presence / absence of a metal film is detected in the infrared transmission spectrum when the transmitted light is almost zero or cannot be measured, or the transmittance of a specific range is smaller than that of a semiconductor wafer containing no metal film. It is done by detecting things. In addition, since infrared light does not pass through the metal film, the transmittance of infrared light decreases in inverse proportion to the increase in the area of the metal film.Therefore, the presence or absence of the metal film can be roughly determined by the decrease in the transmittance. it can. However, since this transmittance differs slightly depending on the type of semiconductor wafer, it is necessary to be careful in setting the conditions.
【００１７】形成膜種の設定は任意であるが、例えば、
形成膜のないもの、レジスト付着のもの、窒化膜のみの
もの、酸化膜のみのもの、あるいはレジスト＋窒化膜＋
酸化膜、窒化膜＋酸化膜、再生不能のもの等の組み合せ
ごとまたは各形成膜の有無等により、後述の処理工程ラ
インの構造等に合わせて仕分けの種類、組み合せ等を適
宜選択することができる。Although the formation film type can be set arbitrarily, for example,
No formation film, resist adhesion, nitride film only, oxide film only, or resist + nitride film +
Depending on the combination of the oxide film, the nitride film + the oxide film, the non-reproducible material and the like, or the presence or absence of each formed film, the type and combination of sorting can be appropriately selected according to the structure of the processing step line described later. .
【００１８】この発明において、半導体ウェーハの再生
方法は、前記の形成膜種の設定に従い、評価方法により
形成膜種別に仕分けされた半導体ウェーハを、例えば、
形成膜のないものの場合、処理工程としては洗浄工程の
みあるいは、１）洗浄、あるいは１）ミラーポリッシ
ュ、２）洗浄の工程が組まれ、また、酸化膜のみの場
合、処理工程としては、１）酸化膜エッチング、２）洗
浄の工程、あるいは必要に応じて、１）酸化膜エッチン
グ、２）ミラーポリッシュ、３）洗浄の工程が組まれ
る。また、窒化膜＋酸化膜の場合は、１）窒化膜＋酸化
膜エッチング、２）ミラーポリッシュ、３）洗浄等の工
程を設定して処理を行うことができる。In the present invention, the method for reclaiming a semiconductor wafer is, for example, that the semiconductor wafers classified according to the formation film type by the evaluation method are set according to the above-mentioned formation film type setting.
In the case where there is no formed film, only the cleaning step or 1) cleaning or 1) mirror polishing and 2) cleaning steps are incorporated as the processing step, and when only the oxide film is formed, the processing step is 1). Oxide film etching, 2) cleaning process, or if necessary, 1) oxide film etching, 2) mirror polishing, and 3) cleaning process are incorporated. In the case of a nitride film + oxide film, the process can be performed by setting steps such as 1) nitride film + oxide film etching, 2) mirror polishing, 3) cleaning.
【００１９】さらに、レジスト＋窒化膜＋酸化膜の場合
は、１）レジスト剥離、２）窒化膜＋酸化膜エッチン
グ、３）ミラーポリッシュ、４）洗浄等の工程を設定し
て処理を行うことによって、各半導体ウェーハごとにで
きるだけ無駄を少なくした再生処理を行うことが可能
で、効率よく再生半導体ウェーハを製造することができ
る。上記の各種処理工程は、例えば、各種エッチング装
置、研磨装置、鏡面研磨装置、洗浄装置などと半導体ウ
ェーハの搬送装置とその制御装置とを組み合せることに
より自動的に処理することができ、装置も同様に専用化
できる。Further, in the case of resist + nitride film + oxide film, by carrying out processing by setting steps such as 1) resist stripping, 2) nitride film + oxide film etching, 3) mirror polishing, and 4) cleaning. It is possible to perform the recycling process with the least possible waste for each semiconductor wafer, and it is possible to efficiently manufacture the recycled semiconductor wafer. The various processing steps described above can be automatically processed by, for example, combining various etching apparatuses, polishing apparatuses, mirror polishing apparatuses, cleaning apparatuses, etc. with a semiconductor wafer transfer apparatus and its control apparatus. It can be specialized as well.
【００２０】[0020]
【実施例】図１にこの発明によるシリコン評価装置の全
体の構成を示すが、符号２は、半導体ウェーハに対して
赤外光を照射して赤外吸収スペクトルを測定する赤外吸
収測定装置である。符号ＣＰＵは、予め設定した種々の
形成膜種を有する半導体ウェーハの赤外吸収スペクトル
を記憶する記憶手段と、該測定装置からの赤外吸収スペ
クトルと比較して半導体ウェーハ表面に形成された膜種
を推定して予め設定された形成膜種別に類別する演算手
段と、この形成膜種別に半導体ウェーハを分別するため
分別装置を制御する制御手段とを有する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the overall structure of a silicon evaluation apparatus according to the present invention. Reference numeral 2 is an infrared absorption measuring apparatus for irradiating a semiconductor wafer with infrared light to measure an infrared absorption spectrum. is there. Reference numeral CPU is a storage unit for storing infrared absorption spectra of semiconductor wafers having various preset film formation types, and a film type formed on the surface of the semiconductor wafer in comparison with the infrared absorption spectra from the measuring device. And a control means for controlling the sorting device for sorting the semiconductor wafers according to the formed film type.
【００２１】符号３は、制御手段の指示に従って各形成
膜種別に半導体ウェーハを搬送仕分けして収納する搬送
部１と収納部４〜７を有する分別装置である。実施例に
おける収納部は４種に種別するために設定されている
が、例えば、形成膜種で再生不能のもの、形成膜がなく
洗浄などのみで再生処理不要のものなどを分別する等、
要求される形成膜種数に応じて収納部数を適宜選定する
ことができる。Reference numeral 3 is a sorting apparatus having a carrying section 1 for carrying and sorting and storing semiconductor wafers for each type of formed film according to an instruction from the control means, and holding sections 4 to 7. Although the storage units in the embodiment are set to be classified into four types, for example, a type of film that cannot be regenerated, a type of film that cannot be regenerated, and a type that does not require a reprocessing process, such as washing, are sorted.
The number of storage portions can be appropriately selected according to the required number of formed film types.
【００２２】ベルトコンベア１で搬送されてきた半導体
ウェーハｗｆは、赤外吸収測定装置２内に導入されて赤
外光を照射して赤外透過・吸収スペクトルが測定され、
測定された赤外吸収スペクトルはＣＰＵでデータ処理さ
れて表面に成膜された形成膜種が推定されて、判別され
た後、形成膜種別に仕分けされる。すなわち、赤外吸収
測定装置２に隣接配置された分別装置３はベルトコンベ
ア１が連接しており、前記の評価が完了した半導体ウェ
ーハｗｆが測定装置２より搬送されてくると、ＣＰＵの
指示に従って各形成膜種別に搬送仕分けされて、形成膜
種別に収納部４〜７に収納される。The semiconductor wafer wf conveyed by the belt conveyor 1 is introduced into the infrared absorption measuring device 2 and irradiated with infrared light to measure the infrared transmission / absorption spectrum,
The measured infrared absorption spectrum is subjected to data processing by the CPU, the formed film type formed on the surface is estimated and determined, and then sorted by the formed film type. That is, the belt conveyor 1 is connected to the sorting device 3 disposed adjacent to the infrared absorption measuring device 2, and when the semiconductor wafer wf whose evaluation has been completed is carried from the measuring device 2, the sorting device 3 follows the instruction of the CPU. The film is sorted and sorted according to the type of the formed film, and stored in the storage units 4 to 7 according to the type of the formed film.
【００２３】ＣＰＵでは、赤外吸収測定装置２にて測定
された図２に示す赤外吸収スペクトル、あるいは図３に
示す測定された赤外吸収スペクトルと不純物酸素及び不
純物炭素及び各種表面膜を検出下限以下しか含まないシ
リコン標準試料の吸収スペクトルから得られる差赤外吸
収スペクトルと、ＣＰＵ内に記憶内蔵している各種形成
膜種の標準赤外吸収スペクトルとを比較し、特に各形成
膜別の特徴的な吸収ピークとピーク位置及び形状の比較
を行い、半導体ウェーハｗｆに成膜された形成膜種を判
別する。In the CPU, the infrared absorption spectrum shown in FIG. 2 measured by the infrared absorption measuring device 2 or the measured infrared absorption spectrum shown in FIG. 3 and impurity oxygen, impurity carbon and various surface films are detected. The difference infrared absorption spectrum obtained from the absorption spectrum of the silicon standard sample containing only the lower limit or less is compared with the standard infrared absorption spectra of various kinds of formed film stored in the CPU. The characteristic absorption peak is compared with the peak position and shape to determine the type of film formed on the semiconductor wafer wf.
【００２４】金属膜を有する半導体ウェーハの赤外透過
スペクトルとしては、透過光がほとんどゼロか測定不可
のものであり、４０００〜１５００ｃｍ-1の透過率が金
属膜を全く含まない半導体ウェーハの透過率よりも小さ
くなる、例えば、図４に見られるように、４０００〜１
５００ｃｍ-1にはシリコンその他の吸収がほとんどない
ためフラットなベースラインが見られる。また、かかる
透過率は半導体ウェーハの種類により若干異なるが、図
４のＡは金属膜のないもの透過スペクトルを示し、Ｂ、
Ｃ、Ｄは半導体ウェーハの一部及び全部に金属膜を有す
る場合の透過スペクトルを示すごとく、金属膜による透
過率の減少を形成膜種の違いとして補足できる。Regarding the infrared transmission spectrum of a semiconductor wafer having a metal film, the transmitted light is almost zero or cannot be measured, and the transmittance of 4000-1500 cm -1 is the transmittance of a semiconductor wafer containing no metal film. Smaller than, for example, 4000-1 as seen in FIG.
A flat baseline is seen at 500 cm -1 because there is almost no absorption of silicon or other substances. Further, although the transmittance is slightly different depending on the type of the semiconductor wafer, A in FIG. 4 shows a transmission spectrum without a metal film, and B,
As C and D show transmission spectra when a metal film is provided on a part or all of the semiconductor wafer, a decrease in the transmittance due to the metal film can be supplemented as a difference in the type of film formed.
【００２５】ここでは、窒化膜、酸化膜、窒化膜＋酸化
膜、レジスト＋窒化膜＋酸化膜の４種の形成膜種を設定
して、該形成膜種別に収納部４〜７に分別収納される。
再生処理工程は、窒化膜のみの場合、１）窒化膜エッチ
ング→２）ミラーポリッシュ→３）洗浄の工程、酸化膜
のみの場合、１）酸化膜エッチング→２）洗浄の工程、
窒化膜＋酸化膜の場合、１）窒化膜＋酸化膜エッチング
→２）ミラーポリッシュ→３）洗浄等の工程、レジスト
＋窒化膜＋酸化膜の場合、１）レジスト剥離→２）窒化
膜＋酸化膜エッチング→３）ミラーポリッシュ→４）洗
浄の工程、を設定し、形成膜種別に収納部４〜７に収納
される半導体ウェーハに上記の形成膜種別に設定した再
生処理工程、すなわち、所要工程に要する各装置を搬送
装置で連結し、これを全体的に統括する制御装置を有す
る専用の再生処理装置にて再生半導体ウェーハを製造し
た。Here, four types of formation films of a nitride film, an oxide film, a nitride film + oxide film, a resist + nitride film + oxide film are set, and the storage units 4 to 7 are sorted and stored according to the formation film types. To be done.
In the case of the nitride film only, the regeneration treatment step is 1) nitride film etching → 2) mirror polishing → 3) cleaning step, and only oxide film is 1) oxide film etching → 2) cleaning step,
In the case of nitride film + oxide film, 1) nitride film + oxide film etching → 2) mirror polishing → 3) steps such as cleaning, in case of resist + nitride film + oxide film, 1) resist stripping → 2) nitride film + oxidation Film etching-> 3) mirror polishing-> 4) cleaning process, and a reprocessing process in which the semiconductor wafers stored in the storages 4 to 7 are set to the above-mentioned formation film type, that is, a required process. Each device required for the above was connected by a carrier device, and a reclaimed semiconductor wafer was manufactured by a dedicated reclaiming device having a control device for overall control of the device.
【００２６】またさらに、上記の形成膜種別に収納部４
〜７に加えて、再生不能のもの、形成膜のないものの２
つの収納部を設けて、再生不能の場合は処理外とし、形
成膜のないものの場合は、１）ミラーポリッシュ→２）
洗浄の工程を設定して上述の再生処理装置に組み込んだ
ところ、履歴のはっきりしない半導体ウェーハを含む全
ての半導体ウェーハの評価と再生を行うことができた。Further, according to the type of formed film, the storage section 4 is provided.
In addition to ~ 7, those that cannot be regenerated, those that do not have a forming film, 2
One storage unit is provided, and if it cannot be regenerated, it is out of the process. If there is no film formed, 1) Mirror polish → 2)
When the cleaning process was set and incorporated into the above-mentioned reprocessing apparatus, it was possible to evaluate and reclaim all semiconductor wafers including semiconductor wafers whose history is not clear.
【００２７】[0027]
【発明の効果】この発明により再生を目的とし履歴のは
っきりしない半導体ウェーハに形成された形成膜を簡単
に調べることができ、しかも形成膜種別に仕分けするこ
とができる。また、この発明の再生方法により、仕分し
た形成膜種別に応じて最適な再生処理工程を施すことが
でき、効率良く安価に再生半導体ウェーハを製造するこ
とができる。この発明による再生半導体ウェーハは、廃
物となるべくシリコン半導体基板を無駄なくより再利用
しやすくなる。特に、直径が２００ｍｍ以上の半導体ウ
ェーハには有効であり、歩留りが大きく向上して、製造
コストの引下げに寄与する。According to the present invention, it is possible to easily examine the formed film formed on a semiconductor wafer whose history is not clear for the purpose of reproduction, and to sort the formed films according to the type of formed film. Further, according to the reclaiming method of the present invention, the optimum reclaiming step can be performed according to the type of the formed film that has been sorted, and the reclaimed semiconductor wafer can be efficiently manufactured at low cost. The recycled semiconductor wafer according to the present invention makes it easier to reuse the silicon semiconductor substrate as waste as much as possible. In particular, it is effective for semiconductor wafers having a diameter of 200 mm or more, and the yield is greatly improved, which contributes to a reduction in manufacturing cost.
【図１】この発明によるシリコン評価装置の全体の構成
を示す説明図である。FIG. 1 is an explanatory diagram showing the overall configuration of a silicon evaluation apparatus according to the present invention.
【図２】赤外吸収スペクトルを示すグラフである。FIG. 2 is a graph showing an infrared absorption spectrum.
【図３】図２に示す赤外吸収スペクトルから不純物酸素
及び不純物炭素及び各種表面膜を検出下限以下しか含ま
ないシリコン標準試料の吸収スペクトルから得られる差
赤外吸収スペクトルを示すグラフである。FIG. 3 is a graph showing a differential infrared absorption spectrum obtained from an absorption spectrum of a silicon standard sample containing impurity oxygen, impurity carbon, and various surface films below the detection lower limit from the infrared absorption spectrum shown in FIG.
【図４】金属膜の有無を判別する方法に関する種々の透
過スペクトルを示す説明図である。FIG. 4 is an explanatory diagram showing various transmission spectra related to a method of determining the presence / absence of a metal film.
１ ベルトコンベア ２ 赤外吸収測定装置 ３ 分別装置 ４〜７ 収納部 ｗｆ 半導体ウェーハ 1 Belt Conveyor 2 Infrared Absorption Measuring Device 3 Sorting Device 4-7 Storage Wf Semiconductor Wafer
Claims (6)
て赤外吸収スペクトル分析を行い得た赤外吸収スペクト
ルを、予め設定された種々の形成膜種を有する半導体ウ
ェーハの赤外吸収スペクトルと比較し、半導体ウェーハ
表面に形成された膜種を推定して予め設定された形成膜
種別に類別することを特徴とする半導体ウェーハの評価
方法。1. An infrared absorption spectrum obtained by performing an infrared absorption spectrum analysis on a semiconductor wafer for the purpose of reproduction is compared with an infrared absorption spectrum of a semiconductor wafer having various preset film formation species. Then, the method for evaluating a semiconductor wafer is characterized in that the film type formed on the surface of the semiconductor wafer is estimated and classified into a preset film type.
て赤外光を照射して赤外吸収スペクトルを測定する赤外
吸収測定装置と、予め設定した種々の形成膜種を有する
半導体ウェーハの赤外吸収スペクトルを記憶する記憶手
段と、該測定装置からの赤外吸収スペクトルと比較して
半導体ウェーハ表面に形成された膜種を推定して予め設
定された形成膜種別に類別する演算手段と、この形成膜
種別に半導体ウェーハを分別するため分別装置を制御す
る制御手段とを有する演算装置と、制御手段の指示に従
って各形成膜種別に半導体ウェーハを搬送仕分けして収
納する搬送部と収納部を有する分別装置とからなること
を特徴とする半導体ウェーハの評価装置。2. An infrared absorption measuring device for irradiating a semiconductor wafer for the purpose of reproduction with infrared light to measure an infrared absorption spectrum, and a semiconductor wafer red having various preset film formation species. Storage means for storing the external absorption spectrum, and calculation means for estimating the film type formed on the surface of the semiconductor wafer by comparison with the infrared absorption spectrum from the measuring device and classifying the film type into a preset film type, An arithmetic unit having a control means for controlling the sorting device for sorting the semiconductor wafers according to the formed film type, and a carrying section and a carrying section for carrying and sorting and storing the semiconductor wafer for each formed film type according to an instruction of the controlling means. An apparatus for evaluating a semiconductor wafer, comprising:
て、赤外吸収スペクトル分析を行い、半導体ウェーハ表
面に形成された膜種を推定して、予め設定された形成膜
種別に分別し、該形成膜種に応じて、再生不能、レジス
ト剥離工程、酸化膜エッチング、その他膜エッチング、
研磨、鏡面研磨、洗浄の各工程を選択実施して半導体ウ
ェーハを再生することを特徴とする半導体ウェーハの再
生方法。3. A semiconductor wafer for the purpose of reproduction is subjected to infrared absorption spectrum analysis to estimate the film type formed on the surface of the semiconductor wafer and classify the film into a preset type. Unreproducible, resist stripping process, oxide film etching, other film etching, depending on the type of film formed,
A method of reclaiming a semiconductor wafer, which comprises reclaiming a semiconductor wafer by selectively performing each step of polishing, mirror polishing, and cleaning.
別後に、形成膜種に応じて設定された膜除去工程を連続
して行う形成膜種毎の再生処理装置に送ることを特徴と
する半導体ウェーハの再生方法。4. The semiconductor wafer according to claim 3, wherein after the semiconductor wafers are sorted, the film removing step set according to the film forming type is continuously sent to a reprocessing apparatus for each film forming type. How to play.
て赤外吸収スペクトルを測定する赤外吸収測定装置と、
予め設定した種々の形成膜種を有する半導体ウェーハの
赤外吸収スペクトルを記憶する記憶手段と、該測定装置
からの赤外吸収スペクトルと比較して半導体ウェーハ表
面に形成された膜種を推定して予め設定された形成膜種
に類別する演算手段と、この形成膜種別に半導体ウェー
ハを分別するため分別装置を制御する制御手段とを有す
る演算装置と、制御手段の指示に従って各形成膜種別に
半導体ウェーハを搬送仕分けして収納する搬送部と収納
部を有する分別装置と、分別収納された形成膜種別の半
導体ウェーハに該種別に応じて選択した工程を施すた
め、再生不能、レジスト剥離装置、酸化膜エッチング装
置、その他膜エッチング装置、研磨装置、鏡面研磨装
置、洗浄装置を有し、このうち選定した装置へ順次送る
搬送部と搬送部を制御する制御手段を有する再生処理装
置とを有することを特徴とする半導体ウェーハの再生装
置。5. An infrared absorption measuring device for irradiating a semiconductor wafer with infrared light to measure an infrared absorption spectrum,
Storage means for storing the infrared absorption spectrum of a semiconductor wafer having various preset film formation types, and by estimating the film type formed on the semiconductor wafer surface by comparison with the infrared absorption spectrum from the measuring device An arithmetic unit having a preset forming film type categorizing unit, a computing unit having a controlling unit for controlling the sorting apparatus for sorting the semiconductor wafers according to the forming film type, and a semiconductor for each forming film type according to an instruction from the controlling unit. A sorting apparatus having a transport section and a storage section for transporting and sorting wafers and storing the semiconductor wafers of the formed film type sorted and stored is subjected to a process selected according to the type, so that the wafer cannot be regenerated, the resist stripping apparatus, the oxidation. It has a film etching device, other film etching devices, a polishing device, a mirror polishing device, and a cleaning device, and controls the transfer unit and transfer unit that sequentially send to the selected device. Reproducing apparatus for a semiconductor wafer characterized by having a reproduction processor having a control unit that.
別後に、形成膜種に応じて設定された膜除去工程を連続
して行う形成膜種別毎の再生処理装置を有することを特
徴とする半導体ウェーハの再生装置。6. The semiconductor wafer according to claim 5, further comprising a reprocessing apparatus for each type of formed film, which continuously performs a film removing step set according to the type of formed film after the semiconductor wafer is sorted. Playback device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18630095A JPH0917833A (en) | 1995-06-28 | 1995-06-28 | Evaluation method and regeneration method for semiconductor wafer, and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18630095A JPH0917833A (en) | 1995-06-28 | 1995-06-28 | Evaluation method and regeneration method for semiconductor wafer, and its device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0917833A true JPH0917833A (en) | 1997-01-17 |
Family
ID=16185918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18630095A Pending JPH0917833A (en) | 1995-06-28 | 1995-06-28 | Evaluation method and regeneration method for semiconductor wafer, and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0917833A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384415B1 (en) | 2000-06-20 | 2002-05-07 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Method of evaluating quality of silicon wafer and method of reclaiming the water |
| KR100460311B1 (en) * | 2001-08-22 | 2004-12-08 | 참엔지니어링(주) | Method for making mask or mask blank by using wasted mask |
| US6884634B2 (en) | 2002-09-27 | 2005-04-26 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Specifying method for Cu contamination processes and detecting method for Cu contamination during reclamation of silicon wafers, and reclamation method of silicon wafers |
| US7699997B2 (en) | 2003-10-03 | 2010-04-20 | Kobe Steel, Ltd. | Method of reclaiming silicon wafers |
-
1995
- 1995-06-28 JP JP18630095A patent/JPH0917833A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384415B1 (en) | 2000-06-20 | 2002-05-07 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Method of evaluating quality of silicon wafer and method of reclaiming the water |
| KR100460311B1 (en) * | 2001-08-22 | 2004-12-08 | 참엔지니어링(주) | Method for making mask or mask blank by using wasted mask |
| US6884634B2 (en) | 2002-09-27 | 2005-04-26 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Specifying method for Cu contamination processes and detecting method for Cu contamination during reclamation of silicon wafers, and reclamation method of silicon wafers |
| US7699997B2 (en) | 2003-10-03 | 2010-04-20 | Kobe Steel, Ltd. | Method of reclaiming silicon wafers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7657390B2 (en) | Reclaiming substrates having defects and contaminants | |
| US20020006677A1 (en) | Detection of contaminants on semiconductor wafers | |
| WO2002054155A1 (en) | Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer | |
| US5946543A (en) | Semiconductor wafer evaluating method and semiconductor device manufacturing method | |
| US6035244A (en) | Automatic defect reclassification of known propagator defects | |
| WO2002044696A1 (en) | Method and apparatus for monitoring environment and apparatus for producing semiconductor | |
| JPH0917833A (en) | Evaluation method and regeneration method for semiconductor wafer, and its device | |
| US20080318343A1 (en) | Wafer reclaim method based on wafer type | |
| US20090088049A1 (en) | Method for removal of surface films from reclaim substrates | |
| KR20040100996A (en) | Test substrate reclamation method and apparatus | |
| JP3910324B2 (en) | Semiconductor manufacturing equipment | |
| TWI813702B (en) | Production fixture cleaning management method，device and computer readable storage medium | |
| JP5446160B2 (en) | Manufacturing method of recycled silicon wafer | |
| US5946213A (en) | Intelligent adc reclassification of previously classified propagator defects | |
| JPH0964133A (en) | Detecting method of cu concentration in semiconductor substrate | |
| EP0434633B1 (en) | A method for checking the characteristics of coating layers, particularly layers of paint on metals | |
| US6342704B1 (en) | Method and apparatus for detecting nitride residue on semiconductor wafers | |
| JPS60246635A (en) | Automatic substrate processing apparatus | |
| JP6561954B2 (en) | Manufacturing method of semiconductor wafer | |
| US11705222B1 (en) | Method of reducing greenhouse gas emissions from recycling aluminum alloy wheels | |
| Skumanich | Process and yield improvement based on fast in-line automatic defect classification | |
| Casper et al. | Semiconductor Yield Enhancement through Particle Control | |
| US7794663B2 (en) | Method and system for detection of solid materials in a plasma using an electromagnetic circuit | |
| JP2024074596A (en) | Automatic wafer film type determination system and automatic wafer sorting device | |
| Ke et al. | Advanced Inspection Methodology for the Maximum Extension of Nitride Test Wafer Recycling |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20040721 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20041005 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20041019 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050308 |