JPH09171968A - Heat treatment system and heat treatment of semiconductor substrate - Google Patents
Heat treatment system and heat treatment of semiconductor substrateInfo
- Publication number
- JPH09171968A JPH09171968A JP33287695A JP33287695A JPH09171968A JP H09171968 A JPH09171968 A JP H09171968A JP 33287695 A JP33287695 A JP 33287695A JP 33287695 A JP33287695 A JP 33287695A JP H09171968 A JPH09171968 A JP H09171968A
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- Prior art keywords
- tube
- heat treatment
- reaction tube
- film
- wall
- Prior art date
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Abstract
Description
【発明の詳細な説明】 【０００１】 【発明の属する技術分野】本発明は、半導体製造装置に
おける熱処理装置及び半導体基板の熱処理方法に関す
る。 【０００２】 【従来の技術】従来の熱処理装置では、石英製の反応管
の内部にガス導入口から酸化性ガス及び不活性ガスを導
入し、反応管の外側をヒータで加熱することによって半
導体基板を酸化性雰囲気中で酸化し熱酸化膜を形成す
る。ヒータ材料のカンタルは高純度のＣｕ，Ｆｅ等の金
属不純物を含んでいるが、ＨＣｌガスあるいはＴＣＡ、
ＴＣＥ液体ガスを用いることにより、熱処理中に反応管
を通過して半導体基板中に拡散するＣｕ、Ｆｅ等の金属
不純物のうち特にＦｅを塩化物として排気し、反応管内
の汚染を防止し清浄度を高めている。 【０００３】 【発明が解決しようとする課題】従来、ヒータ材料のカ
ンタルは、純度が低く、Ａｌ、Ｆｅ、Ｃｕ等の金属不純
物を高純度に含んでおり、加熱によって拡散係数の大き
なＣｕ、Ｆｅが石英製の反応管を通過し、熱処理中の半
導体基板中に拡散してしまうという問題があった。ヒー
タ材料として、カンタルの代わりにＭｏＳｉ、ＳｉＣ材
料を使用しても不純物は多少低減されるがまだ不十分で
あり、カンタルと同様の問題が残る。 【０００４】また、石英材料中にもＣｕ，Ｆｅが含まれ
ており、反応管の内部が汚染されてしまうという問題が
あった。こうした反応管内の汚染を防止する方法として
は、従来、ＨＣｌガスを反応管内に導入するものがある
が、金属不純物のうちＦｅに対しては大きな効果が得ら
れるものの、最も悪影響を与えるＣｕに対しては汚染防
止効果が低いという問題があった。 【０００５】本発明は上記のような事情を考慮し、ヒー
タ及び石英製反応管からの半導体基板への金属不純物及
び炭素汚染を防止する熱処理装置及びこの装置を用いた
半導体基板の熱処理方法を提供することを目的としてい
る。 【０００６】 【課題を解決するための手段】上記目的を達成するため
に本発明の熱処理装置は、石英製の反応管と、この反応
管の外壁上に形成したＳｉ3Ｎ4膜と、前記反応管の周り
に設置されたヒータとを具備したことを特徴とするもの
である。 【０００７】また、前記ヒータからの熱は、前記Ｓｉ3
Ｎ4膜を介して反応管の内側に伝導される。この場合用
いられているヒータの材料は、カンタル、ＭｏＳｉ、Ｓ
ｉＣのうちいずれかとする。 【０００８】さらに、前記反応管を内管と外管を有する
２重構造にし、この反応管の内管の外壁上及び外管の内
壁上にＳｉ3Ｎ4膜を堆積させるとよい。この場合、形成
された２つのＳｉ3Ｎ4膜のあいだには空間があると好ま
しい。 【０００９】そして、上記熱処理装置において、石英製
２重構造の反応管の内管の外側と外管の内側にアンモニ
アガスとジクロロシランガスを導入する工程と、前記反
応管の内管の外壁上及び外管の内壁上にＳｉ3Ｎ4膜を形
成する工程と、基板を前記反応管の内側に設置して、前
記反応管の外管の周りより前記Ｓｉ3Ｎ4膜を介して熱処
理する工程とを具備したことを特徴とする半導体基板の
熱処理方法がある。さらに、前記熱処理する工程の後、
前記反応管の内管の外側と外管の内側にＣＦ4ガス、Ｏ2
ガス及びＨ2Ｏを導入する工程と、このＣＦ4ガス、Ｏ2
ガス及びＨ2Ｏと前記Ｓｉ3Ｎ4膜との反応物を排出しＳ
ｉ3Ｎ4膜を除去する工程とを具備したことを特徴とする
方法がある。また、 ＣＦ4ガス、Ｏ2ガス及びＨ2Ｏの
代わりにＨＦ溶液を導入する工程を具備しても可能であ
る。 【００１０】 【発明の実施の形態】以下、図面を参照して本発明の実
施例に係る熱処理装置及び半導体基板の熱処理方法を説
明する。図１は、本発明の第１の実施例に係る熱処理装
置の側面から見た断面図、図２（ａ）は、本発明の第１
の実施例に係る熱処理装置の上面から見た断面図、図２
（ｂ）は、図２（ａ）の一部の拡大図である。 【００１１】反応管１は、石英製でＳｉＣコートされた
底付円筒形であり、内管１ａと外管１ｂで構成される２
重構造である。ここで、内管１ａと外管１ｂの間隔は３
〜４ｍｍである。反応管１の上部には反応管の内管１ａ
と外管１ｂの間にＳｉ3Ｎ4膜３を堆積させるためのガス
供給部２があり、酸化をおこなうためのガス供給部４が
反応管１の内管１ａに接続されている。反応管１の側面
の底部には、Ｓｉ3Ｎ4膜３を除去するためのガス供給部
６を接続することができる。また、反応管１の周りには
ヒータ５が設置されている。 【００１２】まず、反応管１のＳｉ3Ｎ4ガス導入口２ａ
よりアンモニアとジクロルシランを１０：１で導入し、
反応管１の下部両側のポンプ７ａ，７ｂで真空引きし、
ヒータ５により加熱し、圧力：０．４torr、温度：８５
０℃、処理時間：５時間の条件で熱処理をおこなう。こ
れにより、３ＳｉＨ2Ｃｌ2＋４ＮＨ3→ Ｓｉ3Ｎ4＋６
ＨＣｌ＋６Ｈ2Ｏの反応が生じ、反応管１の内管１ａの
外壁の内側および外管１ｂの内壁の外側の各々の上に、
厚さ２μｍのＳｉ3Ｎ4膜３を堆積させる。 【００１３】Ｓｉ3Ｎ4膜３を形成した後、Ｓｉ3Ｎ4ガス
導入口２ａを遮断しポンプ７ａ，７ｂを止める。そし
て、半導体基板７の酸化及び拡散をおこなうために酸化
ガス導入口４ａからＮ２ガスを導入し、反応管内１ｃを
パージしながら、ボート９によって半導体基板８を外部
から反応管の内側に移載する。さらに、酸化ガス導入口
４ａより乾燥酸素を導入し、ヒータ５により例えば温
度：９５０℃、処理時間：３０分で熱処理する。 【００１４】Ｓｉ−Ｎの格子間距離は１．５７×１０-8
ｃｍであり、Ｓｉ−Ｓｉの格子間距離である２．３５×
１０-8ｃｍより短く、Ｓｉ−Ｎ結合の膜を形成すること
によって、その膜の外側に位置するヒータ５、石英製で
ＳｉＣコートされた反応管の外管１ｂからの金属不純物
及び炭素をブロックすることができる。従って、反応管
内１ｃの金属不純物及び炭素汚染のうち大部分を占める
ヒータ５及び反応管の外管１ｂからの汚染が、Ｆｅだけ
でなくＣｕに関しても防止でき、不純物濃度が極めて低
い熱酸化膜を製造することが可能である。 【００１５】ここでＳｉ3Ｎ4膜３の厚さを２μｍ以上と
すると、より高い効果を得ることができる。更に、バッ
チ処理後ポンプ７ａの吸引口の接続を外し、ガス供給部
６を接続する。ガス導入口６ａよりＣＦ4＋Ｏ2＋Ｈ2Ｏ
ガスを導入し、ポンプ７ｂで引きながら汚染されたＳｉ
3Ｎ4膜３と反応させ、１０分間で厚さ２μｍのＳｉ3Ｎ4
膜３を除去する。 【００１６】この方法によれば、Ｓｉ3Ｎ4膜を除去した
後の反応管１の内管の外壁１ａと外管の内壁１ｂとの間
は乾燥しているので、この後すぐに、前述の方法で再び
Ｓｉ3Ｎ4膜３を堆積させ熱処理をおこなうことが可能で
ある。 【００１７】次に、図１を参照して本発明の第２の実施
例に係る熱処理装置及び半導体基板の熱処理方法を説明
する。第２の実施例では、図１においてガス導入口６ａ
を薬液導入口として使用する。 この場合、ＣＦ4ガス
＋Ｏ2ガス＋Ｈ2Ｏの代わりにＨＦ溶液を使用することも
可能である。薬液導入口より１〜１０％のＨＦ溶液を導
入し、ポンプ７ｂにより引きながら３分間流し汚染され
たＳｉ3Ｎ4膜を溶かして除去する。 【００１８】この方法を用いた場合、反応管１の内管の
外壁１ａと外管の内壁１ｂとの間は溶液が残って湿って
いるので、純水を流して十分に洗浄し、薬液導入口より
Ｎ２ガスを導入し１０分間乾燥させる。 【００１９】なお、ガス導入口６ａよりＨＣｌガスを導
入し、ポンプ７ｂの吸引口に超純水を入れたインピンジ
ャー１０を接続し、インピンジャーのポンプで吸引する
ことによって超純水中に不純物を捕集し、フレームレス
原子吸光装置で捕集液中の金属不純物の量と種類を測定
することによって、汚染されたＳｉ ３ Ｎ4膜の除去頻度
をモニターすることが可能である。この方法でモニター
した結果、熱処理実施後の基板中の金属不純物量は従来
の１０11atoms/cm2 から１０9atoms/cm2 未満というよ
うに、フレームレス原子吸光装置の検出限界以下まで押
さえることができることが明らかとなった。 【００２０】なお、本発明は、上記第１及び第２の実施
例に限定されず、ＬＰ（Ｌｏｗ Ｐｒｅｓｓｕｒｅ）等
のＣＶＤ装置、ＲＴＰ（Ｒａｐｉｄ Ｔｈｅｒｍａｌ
Ｐｒｏｃｅｓｓ）装置等半導体分野におけるヒータを用
いる熱処理装置全般に関して実施可能である。 【００２１】 【発明の効果】本発明によれば、熱処理工程において反
応管の外側にＳｉ3Ｎ4膜を堆積させることでヒータおよ
び石英製反応管からの半導体基板への金属不純物Ｃｕ、
Ｆｅの汚染を防止することができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for a semiconductor manufacturing apparatus and a heat treatment method for a semiconductor substrate. In a conventional heat treatment apparatus, an oxidizing gas and an inert gas are introduced into a reaction tube made of quartz from a gas inlet, and the outside of the reaction tube is heated by a heater to form a semiconductor substrate. Is oxidized in an oxidizing atmosphere to form a thermal oxide film. The heater material Kanthal contains high-purity metallic impurities such as Cu and Fe, but HCl gas or TCA,
By using TCE liquid gas, Fe among metal impurities such as Cu and Fe that pass through the reaction tube and diffuse into the semiconductor substrate during the heat treatment is exhausted as chloride, thereby preventing contamination in the reaction tube and improving cleanliness. Is increasing. Conventionally, Kanthal as a heater material has low purity and contains metal impurities such as Al, Fe and Cu in high purity, and Cu and Fe having a large diffusion coefficient by heating. However, there is a problem in that the carbon passes through the quartz reaction tube and diffuses into the semiconductor substrate during the heat treatment. Even if MoSi or SiC material is used as the heater material instead of Kanthal, impurities are reduced to some extent, but it is still insufficient and the same problem as Kanthal remains. Further, since the quartz material also contains Cu and Fe, there is a problem that the inside of the reaction tube is contaminated. As a method of preventing such contamination in the reaction tube, conventionally, there is a method of introducing HCl gas into the reaction tube. However, there is a problem that the effect of preventing pollution is low. In view of the above circumstances, the present invention provides a heat treatment apparatus for preventing metal impurities and carbon contamination from a heater and a quartz reaction tube to a semiconductor substrate and a heat treatment method for a semiconductor substrate using this apparatus. The purpose is to do. In order to achieve the above object, a heat treatment apparatus of the present invention comprises a reaction tube made of quartz, a Si 3 N 4 film formed on the outer wall of the reaction tube, and And a heater installed around the reaction tube. Further, the heat from the heater is the Si 3
It is conducted inside the reaction tube through the N 4 membrane. The material of the heater used in this case is Kanthal, MoSi, S
Either of iC. Further, it is preferable that the reaction tube has a double structure having an inner tube and an outer tube, and a Si 3 N 4 film is deposited on the outer wall of the inner tube and the inner wall of the outer tube of the reaction tube. In this case, it is preferable that there is a space between the two formed Si 3 N 4 films. In the heat treatment apparatus, a step of introducing ammonia gas and dichlorosilane gas into the outer side of the inner tube and the inner side of the outer tube of the quartz double-structured reaction tube, and on the outer wall of the inner tube of the reaction tube and A step of forming a Si 3 N 4 film on the inner wall of the outer tube, and a step of placing a substrate inside the reaction tube and performing a heat treatment from around the outer tube of the reaction tube through the Si 3 N 4 film. There is a heat treatment method for a semiconductor substrate, which comprises: Further, after the heat treatment step,
CF 4 gas, O 2 are added to the outside of the inner tube and the inside of the outer tube of the reaction tube.
The step of introducing gas and H 2 O, and the CF 4 gas, O 2
The reaction product of the gas and H 2 O and the Si 3 N 4 film is discharged and S
and a step of removing the i 3 N 4 film. It is also possible to provide a step of introducing an HF solution instead of CF 4 gas, O 2 gas and H 2 O. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A heat treatment apparatus and a semiconductor substrate heat treatment method according to embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a heat treatment apparatus according to a first embodiment of the present invention seen from a side surface, and FIG.
2 is a cross-sectional view seen from the top of the heat treatment apparatus according to the embodiment of FIG.
FIG. 2B is an enlarged view of a part of FIG. The reaction tube 1 is made of quartz and has a bottomed cylindrical shape coated with SiC, and is composed of an inner tube 1a and an outer tube 1b.
It has a heavy structure. Here, the distance between the inner pipe 1a and the outer pipe 1b is 3
４4 mm. An inner tube 1a of the reaction tube is provided above the reaction tube 1.
The gas supply unit 2 for depositing the Si 3 N 4 film 3 is provided between the outer pipe 1b and the outer pipe 1b, and the gas supply unit 4 for performing oxidation is connected to the inner pipe 1a of the reaction pipe 1. A gas supply unit 6 for removing the Si 3 N 4 film 3 can be connected to the bottom of the side surface of the reaction tube 1. A heater 5 is installed around the reaction tube 1. First, the Si 3 N 4 gas inlet 2a of the reaction tube 1
More ammonia and dichlorosilane were introduced at a ratio of 10: 1,
Vacuum is drawn by the pumps 7a and 7b on both sides of the lower part of the reaction tube 1,
Heated by heater 5, pressure: 0.4 torr, temperature: 85
Heat treatment is performed under the conditions of 0 ° C. and treatment time: 5 hours. Thereby, 3SiH 2 Cl 2 + 4NH 3 → Si 3 N 4 +6
A reaction of HCl + 6H 2 O occurs, and on each of the inside of the outer wall of the inner tube 1a and the outside of the inner wall of the outer tube 1b of the reaction tube 1,
A Si 3 N 4 film 3 having a thickness of 2 μm is deposited. After forming the Si 3 N 4 film 3, the Si 3 N 4 gas inlet 2a is shut off and the pumps 7a and 7b are stopped. Then, in order to oxidize and diffuse the semiconductor substrate 7, N2 gas is introduced from the oxidizing gas inlet 4a and the inside of the reaction tube 1c is purged while the boat 9 transfers the semiconductor substrate 8 from the outside to the inside of the reaction tube. . Further, dry oxygen is introduced through the oxidizing gas introduction port 4a, and heat treatment is performed by the heater 5 at a temperature of 950 ° C. and a treatment time of 30 minutes, for example. The interstitial distance of Si-N is 1.57 × 10 -8
cm, which is the inter-lattice distance of Si-Si 2.35 ×
By forming a Si—N bond film shorter than 10 −8 cm, the heater 5 located outside the film and the metal impurities and carbon from the outer tube 1 b of the reaction tube coated with SiC made of quartz are blocked. can do. Therefore, the contamination from the heater 5 and the outer tube 1b of the reaction tube, which occupy most of the metallic impurities and carbon contamination in the reaction tube 1c, can be prevented not only in Fe but also in Cu, and a thermal oxide film having an extremely low impurity concentration can be formed. It is possible to manufacture. If the thickness of the Si 3 N 4 film 3 is 2 μm or more, a higher effect can be obtained. Further, after the batch processing, the suction port of the pump 7a is disconnected and the gas supply unit 6 is connected. CF 4 + O 2 + H 2 O from the gas inlet 6a
Contaminated Si while introducing gas and pulling with pump 7b
After reacting with 3 N 4 film 3, Si 3 N 4 having a thickness of 2 μm was formed in 10 minutes.
The film 3 is removed. According to this method, the space between the outer wall 1a of the inner tube and the inner wall 1b of the outer tube of the reaction tube 1 after the removal of the Si 3 N 4 film is dry. It is possible to deposit the Si 3 N 4 film 3 again and heat-treat it. Next, a heat treatment apparatus and a semiconductor substrate heat treatment method according to a second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the gas inlet 6a in FIG.
Is used as a chemical solution inlet. In this case, it is also possible to use an HF solution instead of CF 4 gas + O 2 gas + H 2 O. An HF solution of 1 to 10% is introduced from the chemical solution inlet port, and is flowed for 3 minutes while being pulled by the pump 7b to dissolve and remove the contaminated Si 3 N 4 film. When this method is used, the solution remains wet between the outer wall 1a of the inner tube of the reaction tube 1 and the inner wall 1b of the outer tube, so that pure water is flowed to thoroughly wash and introduce the chemical solution. N 2 gas is introduced from the mouth and dried for 10 minutes. The HCl gas is introduced through the gas inlet 6a.
Impinge with ultra pure water in the suction port of pump 7b
10 is connected and suction is performed by the impinger pump.
By collecting impurities in ultrapure water, it is frameless
Measure the amount and type of metallic impurities in the collected liquid with an atomic absorption spectrometer
By doing so, it is possible to monitor the removal frequency of the contaminated Si 3 N 4 film. As a result of monitoring by this method, the amount of metal impurities in the substrate after the heat treatment is suppressed from the conventional 10 11 atoms / cm 2 to less than 10 9 atoms / cm 2 to below the detection limit of the flameless atomic absorption spectrometer. It became clear that The present invention is not limited to the first and second embodiments described above, but a CVD apparatus such as LP (Low Pressure) or RTP (Rapid Thermal).
The present invention can be applied to all heat treatment apparatuses using a heater in the semiconductor field such as a process apparatus. According to the present invention, by depositing a Si 3 N 4 film on the outside of the reaction tube in the heat treatment step, metal impurities Cu from the heater and the quartz reaction tube to the semiconductor substrate,
It is possible to prevent Fe contamination.
【図１】 本発明の実施例の熱処理装置を側面から見た
断面図である。FIG. 1 is a cross-sectional view of a heat treatment apparatus of an embodiment of the present invention viewed from a side surface.
【図２】 （ａ）本発明の実施例の熱処理装置を上面か
ら見た断面図である。 （ｂ）図２（ａ）の一部の拡大図である。FIG. 2 (a) is a cross-sectional view of the heat treatment apparatus of the embodiment of the present invention seen from above. (B) It is a partially enlarged view of FIG.
【符号の説明】 １…石英製２重構造の反応管、１ａ…内管の外壁、１ｂ
…外管の内壁、１ｃ…反応管内、２…Ｓｉ3Ｎ4を堆積さ
せるためのガス供給部、２ａ… Ｓｉ3Ｎ4ガス導入口、
３… Ｓｉ3Ｎ4膜、４…酸化をおこなうためのガス供給
部、４ａ…酸化ガス導入口、５…ヒータ、８…半導体基
板、９…ボート[Explanation of Codes] 1 ... Quartz double structure reaction tube, 1a ... Outer wall of inner tube, 1b
... the inner wall of the outer tube, 1c ... reaction tube, 2 ... Si 3 N 4 gas supply unit for depositing, 2a ... Si 3 N 4 gas inlet,
3 ... Si 3 N 4 film, 4 ... Gas supply part for performing oxidation, 4a ... Oxidizing gas inlet, 5 ... Heater, 8 ... Semiconductor substrate, 9 ... Boat
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/324 Ｈ０１Ｌ 21/324 Ｄ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H01L 21/324 H01L 21/324 D
Claims (8)
反応管と、この反応管の外壁上に形成したＳｉ3Ｎ4膜
と、前記反応管の周りに設置されたヒータとを具備した
ことを特徴とする熱処理装置。1. A reaction tube made of quartz for internally heat-treating a semiconductor substrate, a Si 3 N 4 film formed on an outer wall of the reaction tube, and a heater installed around the reaction tube. A heat treatment apparatus characterized by.
を介して前記反応管の内側に伝導されることを特徴とす
る請求項１記載の熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the heat from the heater is conducted to the inside of the reaction tube through the Si 3 N 4 film.
ｉ、ＳｉＣのうちいずれかであることを特徴とする請求
項１記載の熱処理装置。3. The material of the heater is Kanthal, MoS
The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is one of i and SiC.
構造であり、この反応管の内管の外壁上及び外管の内壁
上にＳｉ3Ｎ4膜を堆積させることを特徴とする請求項１
記載の熱処理装置。4. The reaction tube has a double structure having an inner tube and an outer tube, and a Si 3 N 4 film is deposited on the outer wall of the inner tube and the inner wall of the outer tube of the reaction tube. Claim 1
The heat treatment apparatus according to the above.
ｉ3Ｎ4膜と、外管の内壁上に堆積したＳｉ3Ｎ4膜のあい
だに空間があることを特徴とする請求項４記載の熱処理
装置。5. S deposited on the outer wall of the inner tube of the reaction tube
The heat treatment apparatus according to claim 4, wherein there is a space between the i 3 N 4 film and the Si 3 N 4 film deposited on the inner wall of the outer tube.
外管の内側にアンモニアガスとジクロロシランガスを導
入し、前記反応管の内管の外壁上及び外管の内壁上にＳ
ｉ3Ｎ4膜を形成する工程と、前記反応管の内側に半導体
基板を設置し前記反応管の外管の周りより前記Ｓｉ3Ｎ4
膜を介して熱処理する工程とを具備したことを特徴とす
る半導体基板の熱処理方法。6. An ammonia gas and a dichlorosilane gas are introduced into the outer side of the inner tube and the inner side of the outer tube of the quartz double-structured reaction tube, and S is introduced onto the outer wall of the inner tube of the reaction tube and the inner wall of the outer tube.
a step of forming an i 3 N 4 film, a semiconductor substrate is installed inside the reaction tube, and the Si 3 N 4 film is formed around the outer tube of the reaction tube.
And a step of performing heat treatment through the film.
重構造の反応管の内管の外側と外管の内側にＣＦ4ガ
ス、Ｏ2ガス及びＨ2Ｏを導入する工程と、このＣＦ4ガ
ス、Ｏ2ガス及びＨ2Ｏと前記Ｓｉ3Ｎ4膜との反応物を排
出しＳｉ3Ｎ4膜を除去する工程とを具備したことを特徴
とする請求項６記載の半導体基板の熱処理方法。7. The quartz-made 2 after the heat treatment step
A step of introducing CF 4 gas, O 2 gas and H 2 O to the outside of the inner tube and the inside of the outer tube of the heavy structure reaction tube, and the CF 4 gas, O 2 gas and H 2 O and the Si 3 N 4 film and the heat treatment method of semiconductor substrate according to claim 6, characterized by including a step of removing the discharged the Si 3 N 4 film of the reaction.
重構造の反応管の内管の外側と外管の内側にＨＦ溶液を
導入する工程と、前記Ｓｉ3Ｎ4膜を溶かしＳｉ3Ｎ4膜を
除去する工程とを具備したことを特徴とする請求項６記
載の半導体基板の熱処理方法。8. The quartz-made 2 after the heat treatment step
Introducing a HF solution inside the outer and the outer tube of the inner tube of the reaction tube of heavy construction, characterized by comprising a step of removing the Si 3 N 4 film was dissolved the the Si 3 N 4 film The method for heat treating a semiconductor substrate according to claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33287695A JPH09171968A (en) | 1995-12-21 | 1995-12-21 | Heat treatment system and heat treatment of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33287695A JPH09171968A (en) | 1995-12-21 | 1995-12-21 | Heat treatment system and heat treatment of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09171968A true JPH09171968A (en) | 1997-06-30 |
Family
ID=18259799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33287695A Withdrawn JPH09171968A (en) | 1995-12-21 | 1995-12-21 | Heat treatment system and heat treatment of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09171968A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964516B2 (en) | 2008-03-14 | 2011-06-21 | Tokyo Electron Limited | Film formation apparatus for semiconductor process and method for using same |
-
1995
- 1995-12-21 JP JP33287695A patent/JPH09171968A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964516B2 (en) | 2008-03-14 | 2011-06-21 | Tokyo Electron Limited | Film formation apparatus for semiconductor process and method for using same |
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