JPH09162675A - Surface acoustic wave converter and electronic device - Google Patents

Surface acoustic wave converter and electronic device

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Publication number
JPH09162675A
JPH09162675A JP35069295A JP35069295A JPH09162675A JP H09162675 A JPH09162675 A JP H09162675A JP 35069295 A JP35069295 A JP 35069295A JP 35069295 A JP35069295 A JP 35069295A JP H09162675 A JPH09162675 A JP H09162675A
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JP
Japan
Prior art keywords
width
electrode
surface acoustic
acoustic wave
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35069295A
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Japanese (ja)
Inventor
Kazuhiko Yamanouchi
和彦 山之内
Hiroyuki Odakawa
裕之 小田川
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Individual
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Individual
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Priority to JP35069295A priority Critical patent/JPH09162675A/en
Publication of JPH09162675A publication Critical patent/JPH09162675A/en
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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To acquire a unidirectional surface acoustic wave having an open type floating electrode with a converter which has the interdigital electrodes on a piezoelectric substrate, etc., by specifying the operating wavelength of a basic wave and the ratio between the width and the void of every electrode. SOLUTION: A cycle of the array of interdigital electrodes provided on a piezoelectric substrate 1 is defined by width L1 and void a1 of a positive electrode, width L2 and void a2 of a negative electrode, width L3 and void a3 of the negative electrode, and width L4 and void a4 of an poen type floating electrode respectively. Then the operating wavelength of a basic wave is referred to as λ1 with all ratios set at 0.125 between the wavelength λ1 and the width L1 to L4 and voids a1 to a4 of electrodes. Otherwise, L1 /λ1 =0.11 is defined together with a1 /λ1 =0.11, L2 /λ1 =0.23, a2 /λ1 =0.11, L3 /λ1 =0.11, a3 /λ1 =0.11, L4 /λ1 =0.11 and a4 /λ1 =0.11 respectively or these value are limited in a range of 0.05 to 0.3.

Description

【発明の詳細な説明】Detailed Description of the Invention

【産業上の利用分野】本発明は開放型の浮き電極をもつ
一方向性の弾性表面波変換器及びそれらの電極の作製す
る方法とその方法を用いた電子装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a unidirectional surface acoustic wave converter having an open floating electrode, a method of manufacturing those electrodes, and an electronic device using the method.

【従来技術】従来のすだれ状電極弾性表面波変換器は、
両方向性のため、低損失の弾性表面波変換器は得られな
かった。また、この難点を解決する方法として、一方向
弾性表面波変換器が種々提案されているが、２枚以上の
高精度のマスク重ね合わせ露光法が必要なため、その高
周波での作製が困難であった。2. Description of the Related Art A conventional interdigital transducer surface acoustic wave converter is
Due to the bidirectionality, a low loss surface acoustic wave transducer could not be obtained. Further, various one-way surface acoustic wave converters have been proposed as a method for solving this difficulty, but high-precision mask superposition exposure method of two or more sheets is required, and therefore it is difficult to manufacture at high frequency. there were.

【０００３】[0003]

【発明が解決しようとする課題】本方法は、新たな構造
の浮き電極をもつ一方向弾性表面波及び高度のマスク合
わせを必要しない上記の難点を解決する方法に関するも
のである。SUMMARY OF THE INVENTION The present invention is directed to a method for overcoming the above difficulties which do not require unidirectional surface acoustic waves having a new structure of floating electrodes and a high degree of mask alignment.

【０００４】[0004]

【課題を解決するための手段】本発明は上述したごとき
従来の欠陥を除去すべくなされたものであって、正負電
極の間に浮き電極を配置した一方向弾性表面波変換器及
び正負電極の間に浮き電極を配置した微小空隙構造の一
方向弾性表面波変換器を新たな作製法により得る法に関
するものである。SUMMARY OF THE INVENTION The present invention has been made to eliminate the above-mentioned conventional defects, and is one of a unidirectional surface acoustic wave converter having a floating electrode disposed between the positive and negative electrodes and a positive and negative electrode. The present invention relates to a method for obtaining a unidirectional surface acoustic wave converter having a microscopic void structure in which a floating electrode is arranged between them by a new manufacturing method.

【０００５】[0005]

【実施例１】図１において、圧電性基板或いは圧電性薄
膜をもつ基板或いは圧電性をもつ半導体基板１の上に、
すだれ状電極を作製して弾性表面波を励振・受信する弾
性表面波変換器において、基本波での動作波長をλ１と
して、電極の配列を正電極２の幅Ｌ１、空隙の幅ａ１、
負電極３の幅Ｌ２、空隙の幅ａ２、負電極４の幅Ｌ３、
空隙の幅ａ３、開放型の浮き電極５の幅Ｌ４、空隙の幅
ａ４を１周期とする電極であり、Ｌ１／λ１、ａ１／λ
１、Ｌ２／λ１、ａ２／λ１、Ｌ３／λ１、ａ３／
λ１、Ｌ４／λ１、ａ４／λ１の値が総て０．１２５で
ある場合、及びＬ１／λ１＝０．１１，ａ１／λ１＝
０．１１、Ｌ２／λ１＝０．２３、ａ２／λ１＝０．１
１、Ｌ３／λ１＝０．１１、ａ３／λ１＝０．１１、Ｌ
４／λ１＝０．１１、ａ４／λ１＝０．１１の値である
場合、及びそれらの値の範囲が、０．０５から０．５の
範囲にある弾性表面波変換器及びこれらの１周期電極が
繰り返す構造の弾性表面波変換器及びこの変換器を用い
た電子装置。[Embodiment 1] In FIG. 1, a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate 1 having piezoelectricity,
In a surface acoustic wave converter that produces a comb-shaped electrode and excites and receives surface acoustic waves, the operating wavelength of the fundamental wave is λ 1 , the electrode array is the width L 1 of the positive electrode 2, and the width a 1 of the air gap. ,
Width L 2 of the negative electrode 3, the width a 2 of the air gap, the width L 3 of the negative electrode 4,
The width of the gap a 3, the width L 4 of the open-type floating electrode 5 is an electrode to the width a 4 to 1 cycle of the gap, L 1 / λ 1, a 1 / λ
1 , L 2 / λ 1 , a 2 / λ 1 , L 3 / λ 1 , a 3 /
When the values of λ 1 , L 4 / λ 1 , and a 4 / λ 1 are all 0.125, and L 1 / λ 1 = 0.11, a 1 / λ 1 =
0.11, L 2 / λ 1 = 0.23, a 2 / λ 1 = 0.1
1, L 3 / λ 1 = 0.11, a 3 / λ 1 = 0.11, L
4 / λ 1 = 0.11, a 4 / λ 1 = 0.11 and the range of those values is in the range of 0.05 to 0.5. A surface acoustic wave converter having a structure in which the one-period electrode is repeated, and an electronic device using the converter.

【実施例２】図２において、圧電性基板或いは圧電性薄
膜をもつ基板或いは圧電性をもつ半導体基板１の上に、
微小ギャップ構造のすだれ状電極を作製して弾性表面波
を励振・受信する弾性表面波変換器において、基本波で
の動作波長をλ１として、電極の配列を正電極２の幅Ｌ
１、空隙の幅ａ１、負電極３の幅Ｌ２、空隙の幅ａ２、
負電極４の幅Ｌ３、空隙の幅ａ３、開放型の浮き電極５
の幅Ｌ４、空隙の幅ａ４を１周期とする電極であり、Ｌ
１／λ１＝０．１８、ａ１／λ１＝０．０４、Ｌ２／λ
１＝０．１８、ａ２／λ１＝０．０４、Ｌ３／λ１＝
０．３０、ａ３／λ１＝０．０４、Ｌ４／λ１＝０．１
８、ａ４／λ１＝０．０４の値である場合、及びＬ１／
λ１０．２１，ａ１／λ１＝０．０４、Ｌ２／λ１＝
０．２１、ａ２／λ１＝０．０４、Ｌ３／λ１＝０．２
１、ａ３／λ１＝０．０４、Ｌ４／λ１＝０．２１、ａ
４／λ１＝０．０４の値ある場合、及びそれらの値の範
囲が、電極の幅Ｌ／λ１の値が０．１から０．５の範
囲、空隙の幅ａ／λ１が０．００５から０．１の範囲に
ある弾性表面波変換器及びこれらの１周期の電極が繰り
返す構造の弾性表面波変換器及びこの変換器を用いた電
子装置。Second Embodiment In FIG. 2, on a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate 1 having piezoelectricity,
In a surface acoustic wave converter that produces a comb-shaped electrode having a minute gap structure to excite and receive a surface acoustic wave, the operating wavelength of the fundamental wave is set to λ 1 , and the electrode array has a width L of the positive electrode 2.
1, the width L 2 of the gap width a 1, the negative electrode 3, the width a 2 of the air gap,
Width L 3 of the negative electrode 4, the width of the gap a 3, the open floating electrode 5
L 4 and the width a 4 of the void are one cycle,
1 / λ 1 = 0.18, a 1 / λ 1 = 0.04, L 2 / λ
1 = 0.18, a 2 / λ 1 = 0.04, L 3 / λ 1 =
0.30, a 3 / λ 1 = 0.04, L 4 / λ 1 = 0.1
8, a 4 / λ 1 = 0.04, and L 1 /
λ 1 0.21, a 1 / λ 1 = 0.04, L 2 / λ 1 =
0.21, a 2 / λ 1 = 0.04, L 3 / λ 1 = 0.2
1, a 3 / λ 1 = 0.04, L 4 / λ 1 = 0.21, a
4 / λ 1 = 0.04, and the range of these values is such that the value of the electrode width L / λ 1 is in the range of 0.1 to 0.5 and the width of the air gap a / λ 1 is 0. A surface acoustic wave converter in the range of 0.005 to 0.1, a surface acoustic wave converter having a structure in which these electrodes of one cycle are repeated, and an electronic device using the converter.

【実施例３】図３において、圧電性基板或いは圧電性薄
膜をもつ基板或いは圧電性をもつ半導体基板１の上に、
すだれ状電極を作製して弾性表面波を励振・受信する弾
性表面波変換器において、基本波での動作波長をλ１と
して、電極の配列を正電極１１の幅Ｌ１、空隙の幅
ａ１、負電極１２の幅Ｌ２、空隙の幅ａ２、開放型の浮
き電極１３の幅Ｌ３、空隙の幅ａ３を１周期とする電極
であり、Ｌ１／λ１＝０．１２５、ａ１／λ１＝０．１
２５、Ｌ２／λ１＝０．３７５、ａ２／λ１＝０．１２
５、Ｌ３／λ１＝０．１２５、ａ３／λ１＝０．１２
５、である場合、及びＬ１／λ１＝０．１１，ａ１／λ
１＝０．１１、Ｌ２／λ１＝０．４５、ａ２／λ１＝
０．１１、Ｌ３／λ１＝０．１１、ａ３／λ１＝０．１
１、の値である場合、及び電極の幅Ｌ／λ１＝０．１か
ら０．５の範囲、ａ／λ１の幅が０．０５から０．５の
範囲にある弾性表面波変換器及びこれらの１周期の電極
が繰り返す構造の弾性表面波変換器及びこの変換器及び
この変換器を用いた電子装置。Third Embodiment In FIG. 3, a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate 1 having a piezoelectric property,
In a surface acoustic wave converter that produces interdigital electrodes and excites and receives surface acoustic waves, the operating wavelength of the fundamental wave is λ 1 , the electrode array is the width L 1 of the positive electrode 11, and the width a 1 of the air gap. , the width L 2 of the negative electrode 12, the width a 2 of the air gap, the width L 3 of the open-type floating electrodes 13 are electrodes to the width a 3 to 1 cycle of the gap, L 1 / lambda 1 = 0.125, a 1 / λ 1 = 0.1
25, L 2 / λ 1 = 0.375, a 2 / λ 1 = 0.12
5, L 3 / λ 1 = 0.125, a 3 / λ 1 = 0.12
5, and L 1 / λ 1 = 0.11, a 1 / λ
1 = 0.11, L 2 / λ 1 = 0.45, a 2 / λ 1 =
0.11, L 3 / λ 1 = 0.11, a 3 / λ 1 = 0.1
Surface acoustic wave converter having a value of 1, and a width L / λ 1 of the electrode in the range of 0.1 to 0.5 and a width of a / λ 1 in the range of 0.05 to 0.5. And a surface acoustic wave converter having a structure in which these electrodes of one cycle are repeated, the converter, and an electronic device using the converter.

【実施例４】図４において、圧電性基板或いは圧電性薄
膜をもつ基板或いは圧電性をもつ半導体基板１の上に、
微小ギャップ構造のすだれ状電極を作製して弾性表面波
を励振・受信する弾性表面波変換器において、基本波で
の動作波長をλ１として、電極の配列を正電極１１の幅
Ｌ１、空隙ａ１、負電極１２の幅Ｌ２、空隙の幅ａ２、
開放型の浮き電極１３の幅Ｌ３、空隙の幅ａ３を１周期
とする電極であり、Ｌ１／λ１＝０．１８、ａ１／λ１
＝０．０４、Ｌ２／λ１＝０．５２、ａ２／λ１＝０．
０４、Ｌ３／λ１＝０．１８、ａ３／λ１＝０．０４、
である場合、及びＬ１／λ１＝０．２１，ａ１／λ１＝
０．０４、Ｌ２／λ１＝０．４６、ａ２／λ１＝０．０
４、Ｌ３／λ１＝０．２１、ａ３／λ１＝０．０４、の
値である場合、及び電極の幅Ｌ／λ１の値が０．１から
０．６の範囲、ａ／λ１の幅が０．００５から０．１の
範囲にある弾性表面波変換器及びこれらの１周期の電極
が繰り返す構造の弾性表面波変換器及びこの変換器を用
いた電子装置。Fourth Embodiment In FIG. 4, on a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate 1 having piezoelectricity,
In a surface acoustic wave converter for producing a comb-shaped electrode having a minute gap structure to excite and receive a surface acoustic wave, the operating wavelength of the fundamental wave is λ 1 , the electrode array is the width L 1 of the positive electrode 11, and the gap is a 1 , the width L 2 of the negative electrode 12, the width a 2 of the void,
Width L 3 of the open-type floating electrodes 13 are electrodes to the width a 3 to 1 cycle of the gap, L 1 / λ 1 = 0.18 , a 1 / λ 1
= 0.04, L 2 / λ 1 = 0.52, a 2 / λ 1 = 0.
04, L 3 / λ 1 = 0.18, a 3 / λ 1 = 0.04,
And L 1 / λ 1 = 0.21, a 1 / λ 1 =
0.04, L 2 / λ 1 = 0.46, a 2 / λ 1 = 0.0
4, L 3 / λ 1 = 0.21, a 3 / λ 1 = 0.04, and the width L / λ 1 of the electrode is in the range of 0.1 to 0.6, a A surface acoustic wave converter having a width of / λ 1 in the range of 0.005 to 0.1, a surface acoustic wave converter having a structure in which electrodes of these one cycle are repeated, and an electronic device using the converter.

【実施例５】図５に示しように、実施例２及び実施例４
の電極の作製法として、基板１の表面に金属薄膜を付着
させた後、図５（１）の斜線のようなレジストパターン
を作製した後、エッチング法などによりレジストパター
ンの下に電極を得た後、レジストパターンの下の金属薄
膜のエッジを陽極酸化により誘電体膜を得た後、金属薄
膜を付着させ、図６の方法により、斜め方向から、金属
膜などを付着させ、レジストの影により図５の６、７、
８、の部分には金属膜などが付着しないことを用いて、
最初の金属膜はエッチングするが、後の金属膜などはエ
ッチングしないエッチング液を用いてエッチングするこ
とにより、６、７、８の部分の金属膜を除去した後、リ
フトオフ法によりレジスト及びレジストの上の金属薄膜
を除去した後、取り出し電極９、１０を付着させる方法
により得られる弾性表面波変換器及びこの変換器を用い
た電子装置。[Embodiment 5] As shown in FIG. 5, Embodiment 2 and Embodiment 4
As a method of manufacturing the electrode of (1), a metal thin film is attached to the surface of the substrate 1, a resist pattern shown by hatching in FIG. 5 (1) is manufactured, and then an electrode is obtained under the resist pattern by an etching method or the like. After that, an edge of the metal thin film under the resist pattern is anodized to obtain a dielectric film, and then the metal thin film is attached, and a metal film or the like is attached obliquely by the method of FIG. 6, 7 of FIG.
By using that no metal film adheres to the part of 8,
The first metal film is etched, but the latter metal film and the like are not etched. Thus, the metal films 6, 7 and 8 are removed by etching using an etching solution, and then the lift-off method is used to remove the resist and the resist. A surface acoustic wave converter obtained by a method of attaching extraction electrodes 9, 10 after removing the metal thin film of 1. and an electronic device using this converter.

【実施例６】図５に示すように、実施例２及び実施例４
の電極の作製法として、図５のように、基板１の表面に
金属薄膜を付着させた後、図５（１）の斜線のようなレ
ジストパターンを作製した後、エッチング法などにより
レジストパターンの下に電極を得た後、レジストパター
ンの下の金属薄膜のエッジを陽極酸化により誘電体膜を
得た後、図６の方法により、斜め方向から、金属膜を付
着させ、レジストの影により図６の６、７、８、の部分
には金属膜が付着しないことを用いて、金属膜の一部が
切断される方法により電極を得た後、リフトオフ法によ
りレジスト及びレジストの上の金属薄膜を除去した後、
取り出し電極９、１０を付着させる方法により得られる
弾性表面波変換器及びこの変換器を用いた電子装置。Sixth Embodiment As shown in FIG. 5, a second embodiment and a fourth embodiment.
As a method of manufacturing the electrode of FIG. 5, after depositing a metal thin film on the surface of the substrate 1 as shown in FIG. 5, a resist pattern shown by diagonal lines in FIG. After obtaining the electrode below, the edge of the metal thin film under the resist pattern is anodized to obtain a dielectric film, and then the metal film is attached in an oblique direction by the method of FIG. Since the metal film does not adhere to the portions 6, 6, and 8 of 6, an electrode is obtained by a method of cutting a part of the metal film, and then a resist and a metal thin film on the resist by a lift-off method. After removing
A surface acoustic wave converter obtained by a method of attaching extraction electrodes 9, 10 and an electronic device using this converter.

【実施例７】実施例５及び実施例６の方法により得られ
る弾性表面波変換器及びこの変換器を用いた電子装置。
図１に示した電極構造の内、Ｌ１／λ１＝０．１１，ａ
１／λ１＝０．１１、Ｌ２／λ１＝０．２３、ａ２／λ
１＝０．１１、Ｌ３／λ１＝０．１１、ａ３／λ１＝
０．１１、Ｌ４／λ１＝０．１１、ａ４／λ１＝０．１
１の値である場合でり、かつ、電極の対数Ｎ＝２０、電
極の幅Ｗ＝４０の場合の等価回路による計算結果を図７
に示す。実線が順方向であり、約７．５ｄＢの方向性が
得られている。また、図８は、図２に示した微小ギャッ
プ構造の電極の内、Ｌ１／λ１＝０．１８，ａ１／λ１
＝０．０４、Ｌ２／λ１＝０．１８、ａ２／／λ１＝
０．０４、Ｌ３／λ１＝０．３０、ａ３／λ１＝０．０
４、Ｌ４／λ１＝０．１８、ａ４／λ１＝０．０４の値
である場合の場合で、かつ Ｎ＝２０、Ｗ＝４０の場合
であり、約７ｄの方向性が得られている。上記の構造
は、同じ周期の電極が繰り返す方法について述べている
が、周期の異なる電極が繰り返す場合も本特許に含まれ
る。また、電極間の分離法として陽極酸化法について述
べたが、レジストのオーバーハングを用いる方法なども
本特許に含まれる。また、電極膜厚については、各電極
の膜厚が同じ場合、及び異なる場合も本特許に含まれ
る。特に、特許請求項２及び４においては、最初に付着
させる金属膜厚と後から付着させる膜厚は、同じ場合及
び異なる場合のいずれも本特許に含まれる。Seventh Embodiment A surface acoustic wave converter obtained by the methods of the fifth and sixth embodiments and an electronic device using the converter.
Among the electrode structures shown in FIG. 1, L 1 / λ 1 = 0.11, a
1 / λ 1 = 0.11, L 2 / λ 1 = 0.23, a 2 / λ
1 = 0.11, L 3 / λ 1 = 0.11, a 3 / λ 1 =
0.11, L 4 / λ 1 = 0.11, a 4 / λ 1 = 0.1
FIG. 7 shows the calculation result by the equivalent circuit when the number of electrode pairs is N = 20 and the electrode width is W = 40.
Shown in The solid line is the forward direction, and the directivity of about 7.5 dB is obtained. In addition, FIG. 8 shows that among the electrodes having the minute gap structure shown in FIG. 2, L 1 / λ 1 = 0.18, a 1 / λ 1
= 0.04, L 2 / λ 1 = 0.18, a 2 // λ 1 =
0.04, L 3 / λ 1 = 0.30, a 3 / λ 1 = 0.0
4, L 4 / λ 1 = 0.18, a 4 / λ 1 = 0.04, and N = 20, W = 40, and a directionality of about 7d is obtained. Has been. The above structure describes a method in which electrodes with the same period repeat, but the case in which electrodes with different periods repeat is also included in this patent. Although the anodic oxidation method has been described as the method for separating the electrodes, a method using an overhang of the resist is also included in this patent. Further, regarding the electrode film thickness, the present patent also includes the case where the film thickness of each electrode is the same or different. In particular, in claims 2 and 4, the metal film thickness to be deposited first and the film thickness to be deposited later are both included in the present patent when they are the same or different.

【０００７】[0007]

【発明の効果】本発明の方法を用いることにより、良好
な一方向弾性表面波変換器が得られる。また、その作製
法についても、微細電極の一方向弾性表面波変換器を高
精度のマスク合わせを必要とせず容易に得ることができ
る。By using the method of the present invention, a good one-way surface acoustic wave transducer can be obtained. Also, regarding the manufacturing method thereof, the unidirectional surface acoustic wave converter for fine electrodes can be easily obtained without the need for highly accurate mask alignment.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一方向弾性表面波変換器の断面図を示
す。FIG. 1 shows a cross-sectional view of a one-way surface acoustic wave converter of the present invention.

【図２】本発明の微小ギャップ構造の一方向弾性表面波
変換器の断面図を示す。FIG. 2 shows a cross-sectional view of a unidirectional surface acoustic wave converter of the microgap structure of the present invention.

【図３】本発明の一方向弾性表面波変換器の断面図を示
す。FIG. 3 shows a cross-sectional view of the one-way surface acoustic wave converter of the present invention.

【図４】本発明の微小ギャップ構造の一方向弾性表面波
変換器の断面図を示す。FIG. 4 shows a cross-sectional view of a unidirectional surface acoustic wave converter of the microgap structure of the present invention.

【図５】本発明の微小ギャップ構造の電極の作製法を示
すFIG. 5 shows a method for producing an electrode having a minute gap structure according to the present invention.

【図６】本発明の微小ギャップ構造の電極を作製するた
めの斜め蒸着法の平面図及び断面図を示す。FIG. 6 shows a plan view and a cross-sectional view of an oblique deposition method for producing an electrode having a minute gap structure according to the present invention.

【図７】実施例の１の一方向弾性表面波変換器の計算結
果を示す。実線は前進方向、点線は後退方向の周波数特
性である。FIG. 7 shows a calculation result of the one-way surface acoustic wave converter of Example 1. The solid line shows the frequency characteristic in the forward direction and the dotted line shows the frequency characteristic in the backward direction.

【図８】実施例の２の一方向弾性表面波変換器の計算結
果を示す。実線は前進方向、点線は後退方向の周波数特
性である。FIG. 8 shows a calculation result of the unidirectional surface acoustic wave converter of Example 2; The solid line shows the frequency characteristic in the forward direction and the dotted line shows the frequency characteristic in the backward direction.

【符号の説明】[Explanation of symbols]

１…基板、２…正電極、３…負電極、４…負電極、５…
開放型の浮き電極、６…ギャップ、７…ギャップ、８…
ギャップ、９…取り出し電極、１０…取り出し電極、１
１…正電極、１２…負電極、１３…開放型の浮き電極、1 ... Substrate, 2 ... Positive electrode, 3 ... Negative electrode, 4 ... Negative electrode, 5 ...
Open floating electrode, 6 ... Gap, 7 ... Gap, 8 ...
Gap, 9 ... Extraction electrode, 10 ... Extraction electrode, 1
1 ... Positive electrode, 12 ... Negative electrode, 13 ... Open floating electrode,

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】圧電性基板或いは圧電性薄膜をもつ基板或
いは圧電性をもつ半導体基板の上に、すだれ状電極を作
製して弾性表面波を励振・受信する弾性表面波変換器に
おいて、基本波での動作波長をλ１として、電極の配列
を正電極の幅Ｌ１、空隙ａ１、負電極の幅Ｌ２、空隙の
幅ａ２、負電極の幅Ｌ３、空隙の幅ａ３、開放型の浮き
電極の幅Ｌ４、空隙の幅ａ４を１周期とする電極であ
り、Ｌ１／λ１、ａ１／λ１、Ｌ２／λ１、ａ２／
λ１、Ｌ３／λ１、ａ３／λ１、Ｌ４／λ１ａ４／λ１
の値が総て０．１２５である場合、及びＬ１／λ１＝
０．１１，ａ１／λ１＝０．１１、Ｌ２／λ１＝０．２
３、ａ２／λ１＝０．１１、Ｌ３／λ１＝０．１１、ａ
３／λ１＝０．１１、Ｌ４／λ１＝０．１１、ａ４／λ
１＝０．１１の値である場合、及びそれらの値の範囲
が、０．０５から０．３の範囲にある弾性表面波変換器
及びこれらの１周期の電極が繰り返す構造の弾性表面波
変換器及びこの変換器を用いた電子装置。1. A surface acoustic wave converter for exciting and receiving surface acoustic waves by forming interdigital electrodes on a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate having piezoelectricity. At the operating wavelength of λ 1 , the electrodes are arranged in a positive electrode width L 1 , a gap a 1 , a negative electrode width L 2 , a gap width a 2 , a negative electrode width L 3 , a gap width a 3 , It is an electrode in which the width L 4 of the floating electrode of the open type and the width a 4 of the void are one cycle, and L 1 / λ 1 , a 1 / λ 1 , L 2 / λ 1 , a 2 /
λ 1 , L 3 / λ 1 , a 3 / λ 1 , L 4 / λ 1 a 4 / λ 1
All values of 0.125, and L 1 / λ 1 =
0.11, a 1 / λ 1 = 0.11, L 2 / λ 1 = 0.2
3, a 2 / λ 1 = 0.11, L 3 / λ 1 = 0.11, a
3 / λ 1 = 0.11, L 4 / λ 1 = 0.11, a 4 / λ
1 = 0.11 and the range of those values is in the range of 0.05 to 0.3 and the surface acoustic wave conversion of the structure in which these electrodes of one cycle are repeated. Device and electronic device using this converter. 【請求項２】圧電性基板或いは圧電性薄膜をもつ基板或
いは圧電性をもつ半導体基板の上に、すだれ状電極を作
製して弾性表面波を励振・受信する弾性表面波変換器に
おいて、基本波での動作波長をλ１として、電極の配列
を正電極の幅Ｌ１、空隙ａ１、負電極の幅Ｌ２、空隙の
幅ａ２、負電極の幅Ｌ３、空隙の幅ａ３、開放型の浮き
電極の幅Ｌ４、空隙の幅ａ４を１周期とする電極であ
り、Ｌ１／λ１＝０．１８、ａ１／λ１＝０．０４、Ｌ
２／λ１＝０．１８、ａ２／λ１＝０．０４、Ｌ３／λ
１＝０．３０、ａ３／λ１＝０．０４、Ｌ４／λ１＝
０．１８、ａ４／λ１＝０．０４の値である場合、及び
Ｌ１／λ１＝０．２１，ａ１／λ１＝０．０４、Ｌ２／
λ１＝０．２１、ａ２／λ１＝０．０４、Ｌ３／λ１＝
０．２１、ａ３／λ１＝０．０４、Ｌ４／λ１＝０．２
１、ａ４／λ１＝０．０４の値である場合、及びそれら
の値の範囲が、電極の幅Ｌ／λ１の値が０．１から０．
５の範囲、空隙の幅ａ／λ１が０．００５から０．１の
範囲にある弾性表面波変換器及びこれらの１周期の電極
が繰り返す構造の弾性表面波変換器及びこの変換器を用
いた電子装置。2. A surface acoustic wave converter for exciting and receiving surface acoustic waves by forming interdigital electrodes on a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate having piezoelectricity. At the operating wavelength of λ 1 , the electrodes are arranged in a positive electrode width L 1 , a gap a 1 , a negative electrode width L 2 , a gap width a 2 , a negative electrode width L 3 , a gap width a 3 , width L 4 of the open-type floating electrode is an electrode according to the width a 4 to 1 cycle of the gap, L 1 / λ 1 = 0.18 , a 1 / λ 1 = 0.04, L
2 / λ 1 = 0.18, a 2 / λ 1 = 0.04, L 3 / λ
1 = 0.30, a 3 / λ 1 = 0.04, L 4 / λ 1 =
0.18, a 4 / λ 1 = 0.04, and L 1 / λ 1 = 0.21, a 1 / λ 1 = 0.04, L 2 /
λ 1 = 0.21, a 2 / λ 1 = 0.04, L 3 / λ 1 =
0.21, a 3 / λ 1 = 0.04, L 4 / λ 1 = 0.2
1, a 4 / λ 1 = 0.04, and the range of these values is such that the value of the width L / λ 1 of the electrode is 0.1 to 0.
5, a surface acoustic wave converter having a gap width a / λ 1 in the range of 0.005 to 0.1, and a surface acoustic wave converter having a structure in which electrodes of one period of these are repeated, and this converter are used. The electronic device that was. 【請求項３】圧電性基板或いは圧電性薄膜をもつ基板或
いは圧電性をもつ半導体基板の上に、すだれ状電極を作
製して弾性表面波を励振・受信する弾性表面波変換器に
おいて、基本波での動作波長をλ１として、電極の配列
を正電極の幅Ｌ１、空隙ａ１、負電極の幅Ｌ２、空隙の
幅ａ２、開放型の浮き電極の幅Ｌ３、空隙の幅ａ３を１
周期とする電極であり、Ｌ１／λ１＝０．１２５、ａ１
／＝０．１２５、Ｌ２／λ１＝０．３７５、ａ２／λ１
＝０．１２５、Ｌ３／λ１＝０．１２５、ａ３／λ１＝
０．１２５、である場合、及びＬ１／λ１＝０．１１，
ａ１／λ１＝０．１１、Ｌ２／／λ１＝０．４５、ａ２
／λ１＝０．１１、Ｌ３／λ１＝０．１１、ａ３／λ１
＝０．１１、の値である場合、及び電極の幅Ｌ／λ１の
値が０．１から０．５の範囲、ａ／λ１の幅が０．０５
から０．５の範囲にある弾性表面波変換器及びこれらの
１周期の電極が繰り返す構造の弾性表面波変換器及びこ
の変換器を用いた電子装置。3. A surface acoustic wave converter for exciting and receiving surface acoustic waves by forming interdigital electrodes on a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate having piezoelectricity. With the operating wavelength at λ 1 , the electrode array is the positive electrode width L 1 , the gap a 1 , the negative electrode width L 2 , the gap width a 2 , the open floating electrode width L 3 , and the gap width. a 3 to 1
An electrode having a period, L 1 / λ 1 = 0.125, a 1
/=0.125, L 2 / λ 1 = 0.375, a 2 / λ 1
= 0.125, L 3 / λ 1 = 0.125, a 3 / λ 1 =
0.125, and L 1 / λ 1 = 0.11,
a 1 / λ 1 = 0.11, L 2 // λ 1 = 0.45, a 2
/ Λ 1 = 0.11, L 3 / λ 1 = 0.11, a 3 / λ 1
= 0.11, and the width L / λ 1 of the electrode is in the range of 0.1 to 0.5, and the width a / λ 1 is 0.05.
To a surface acoustic wave converter in the range of 0.5 to 0.5, a surface acoustic wave converter having a structure in which these electrodes of one cycle are repeated, and an electronic device using the converter. 【請求項４】圧電性基板或いは圧電性薄膜をもつ基板或
いは圧電性をもつ半導体基板の上に、すだれ状電極を作
製して弾性表面波を励振・受信する弾性表面波変換器に
おいて、基本波での動作波長をλ１として、電極の配列
を正電極の幅Ｌ１、空隙ａ１、負電極の幅Ｌ２、空隙の
幅ａ２、開放型の浮き電極の幅Ｌ３、空隙の幅ａ３を１
周期とする電極であり、Ｌ１／λ１＝０．１８、ａ１／
λ１＝０．０４、Ｌ２／λ１＝０．５２、ａ２／λ１＝
０．０４、Ｌ３／λ１＝０．１８、ａ３／λ１＝０．０
４、である場合、及びＬ１／λ１＝０．２１，ａ１／λ
１＝０．０４、Ｌ２／λ１＝０．４６、ａ２／λ１＝
０．０４、Ｌ３／λ１＝０．２１、ａ３／λ１＝０．０
４、の値である場合、及び電極の幅Ｌ／λ１の値が０．
１から０．６の範囲、ａ／λ１の幅が０．００５から
０．１の範囲にある弾性表面波変換器及びこれらの１周
期の電極が繰り返す構造の弾性表面波変換器及びこの変
換器を用いた電子装置。4. A surface acoustic wave converter for exciting and receiving surface acoustic waves by forming interdigital electrodes on a piezoelectric substrate, a substrate having a piezoelectric thin film, or a semiconductor substrate having piezoelectricity. With the operating wavelength at λ 1 , the electrode array is the positive electrode width L 1 , the gap a 1 , the negative electrode width L 2 , the gap width a 2 , the open floating electrode width L 3 , and the gap width. a 3 to 1
An electrode having a period, L 1 / λ 1 = 0.18, a 1 /
λ 1 = 0.04, L 2 / λ 1 = 0.52, a 2 / λ 1 =
0.04, L 3 / λ 1 = 0.18, a 3 / λ 1 = 0.0
4, and L 1 / λ 1 = 0.21, a 1 / λ
1 = 0.04, L 2 / λ 1 = 0.46, a 2 / λ 1 =
0.04, L 3 / λ 1 = 0.21, a 3 / λ 1 = 0.0
4 and the width L / λ 1 of the electrode has a value of 0.
A surface acoustic wave converter having a range of 1 to 0.6 and a / λ 1 width of 0.005 to 0.1, a surface acoustic wave converter having a structure in which electrodes of one period are repeated, and the conversion Electronic device using a container. 【請求項５】請求項２及び請求項４の電極の作製法とし
て、図５のように、基板１の表面に金属薄膜を付着させ
た後、図５（１）の斜線のようなレジストパターンを作
製した後、エッチング法などによりレジストパターンの
下に電極を得た後、レジストパターンの下の金属薄膜の
エッジを陽極酸化により誘電体膜を得た後、金属薄膜を
付着させ、図６の方法により、斜め方向から、金属膜な
どを付着させ、レジストの影により図５の６、７、８、
の部分には金属膜などが付着しないことを用いて、最初
の金属膜はエッチングするが、後の金属膜などはエッチ
ングしないエッチング液を用いてエッチングすることに
より、６、７、８の部分の金属膜を除去した後、リフト
オフ法によりレジスト及びレジストの上の金属薄膜を除
去した後、取り出し電極９、１０を付着させる方法によ
り得られる弾性表面波変換器及びこの変換器を用いた電
子装置。5. A method for producing an electrode according to claim 2 or 4, wherein a metal thin film is attached to the surface of a substrate 1 as shown in FIG. 5, and then a resist pattern shown by diagonal lines in FIG. After obtaining an electrode under the resist pattern by an etching method or the like, an edge of the metal thin film under the resist pattern is anodized to obtain a dielectric film, and then the metal thin film is attached. By a method, a metal film or the like is attached from an oblique direction, and the shadow of the resist makes it possible to apply 6, 7, 8 in FIG.
The first metal film is etched by using the fact that no metal film or the like is attached to the portion of No. 6, but the subsequent metal film is not etched. A surface acoustic wave converter obtained by a method of removing a metal film, a resist and a metal thin film on the resist by a lift-off method, and then attaching extraction electrodes 9 and 10, and an electronic device using the converter. 【請求項６】図５に示すように、請求項２及び請求項４
の電極の作製法として、基板１の表面に金属薄膜を付着
させた後、図５（１）の斜線のようなレジストパターン
を作製した後、エッチング法などによりレジストパター
ンの下に電極を得た後、レジストパターンの下の金属薄
膜のエッジを陽極酸化により誘電体膜を得た後、図６の
方法により、斜め方向から、金属膜を付着させ、レジス
トの影により図６の６、７、８、の部分には金属膜が付
着しないことを用いて、金属膜の一部が切断される方法
により電極を得た後、リフトオフ法によりレジスト及び
レジストの上の金属薄膜を除去した後、取り出し電極
９、１０を付着させる方法により得られる弾性表面波変
換器及びこの変換器を用いた電子装置。6. As shown in FIG. 5, claim 2 and claim 4.
As a method of manufacturing the electrode of (1), a metal thin film is attached to the surface of the substrate 1, a resist pattern shown by hatching in FIG. 5A is manufactured, and then an electrode is obtained under the resist pattern by an etching method or the like. After that, an edge of the metal thin film under the resist pattern is anodized to obtain a dielectric film, and then the metal film is attached in an oblique direction by the method of FIG. Using the fact that the metal film does not adhere to the portion of 8, the electrode is obtained by a method of cutting a part of the metal film, and then the resist and the metal thin film on the resist are removed by the lift-off method, and then taken out. A surface acoustic wave converter obtained by a method of attaching electrodes 9 and 10, and an electronic device using this converter. 【請求項７】請求項５及び請求項６の方法により得られ
る弾性表面波変換器及びこの変換器を用いた電子装置。7. A surface acoustic wave converter obtained by the method according to claim 5, and an electronic device using the surface acoustic wave converter.
JP35069295A 1995-12-11 1995-12-11 Surface acoustic wave converter and electronic device Pending JPH09162675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35069295A JPH09162675A (en) 1995-12-11 1995-12-11 Surface acoustic wave converter and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35069295A JPH09162675A (en) 1995-12-11 1995-12-11 Surface acoustic wave converter and electronic device

Publications (1)

Publication Number Publication Date
JPH09162675A true JPH09162675A (en) 1997-06-20

Family

ID=18412201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35069295A Pending JPH09162675A (en) 1995-12-11 1995-12-11 Surface acoustic wave converter and electronic device

Country Status (1)

Country Link
JP (1) JPH09162675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11411143B2 (en) * 2018-07-05 2022-08-09 Samsung Display Co., Ltd. Light emitting device and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11411143B2 (en) * 2018-07-05 2022-08-09 Samsung Display Co., Ltd. Light emitting device and method of fabricating the same

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