JPH09148279A - Semiconductor wafer back face grinding adhesive film and its using method - Google Patents
Semiconductor wafer back face grinding adhesive film and its using methodInfo
- Publication number
- JPH09148279A JPH09148279A JP7302726A JP30272695A JPH09148279A JP H09148279 A JPH09148279 A JP H09148279A JP 7302726 A JP7302726 A JP 7302726A JP 30272695 A JP30272695 A JP 30272695A JP H09148279 A JPH09148279 A JP H09148279A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- sensitive adhesive
- film
- grinding
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ裏面
研削用粘着フィルム及びその使用方法に関する。詳しく
は、シリコンウエハ等の半導体ウエハの集積回路が組み
込まれた側の面(以下、ウエハ表面という)に貼付して
該半導体ウエハの他の面(以下、ウエハ裏面という)を
研削し、研削終了後に剥離する半導体ウエハの裏面研削
用粘着フィルムであり、温度変化によって粘着力が変化
する粘着剤層を有する半導体ウエハ裏面研削用粘着フィ
ルム及びその使用方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive film for grinding a back surface of a semiconductor wafer and a method of using the same. Specifically, it is affixed to the surface of the semiconductor wafer such as a silicon wafer on which the integrated circuit is incorporated (hereinafter referred to as the wafer front surface), and the other surface of the semiconductor wafer (hereinafter referred to as the wafer back surface) is ground, and the grinding is completed. The present invention relates to an adhesive film for backside grinding of a semiconductor wafer, which is to be peeled off later, and an adhesive film for backside grinding of a semiconductor wafer, which has an adhesive layer whose adhesive strength changes according to temperature changes, and a method of using the same.
【0002】[0002]
【従来の技術】通常、半導体集積回路は、高純度シリコ
ン単結晶等をスライスしてウエハとした後、イオン注
入、エッチング等によりその表面に集積回路を形成し、
更にウエハの裏面をグライディング、ポリッシング、ラ
ッピング等により研削し、ウエハの厚さを100〜60
0μm程度まで薄くしてから、ダイシングしてチップ化
する方法で製造されている。これらの工程の中で、半導
体ウエハ裏面の研削時に半導体ウエハの破損を防止した
り、研削加工を容易にするため、粘着フィルムをその粘
着剤層を介してウエハ表面に貼付して保護する方法が用
いられている。2. Description of the Related Art Generally, a semiconductor integrated circuit is formed by slicing a high-purity silicon single crystal or the like into a wafer, and then forming an integrated circuit on the surface by ion implantation, etching, or the like.
Further, the back surface of the wafer is ground by grinding, polishing, lapping, etc., and the thickness of the wafer is set to 100-60.
It is manufactured by a method of dicing into chips after thinning to about 0 μm. In these steps, a method of protecting the semiconductor wafer by attaching the adhesive film to the wafer surface via the adhesive layer to prevent breakage of the semiconductor wafer when grinding the back surface of the semiconductor wafer or to facilitate the grinding process is known. Used.
【0003】粘着フィルムをウエハ表面に貼着してウエ
ハ裏面を研削する場合、該粘着フィルムに求められる性
能の一つに、半導体ウエハ表面に対する粘着特性が挙げ
られる。具体的には、ウエハ裏面研削時には剥離しない
程度の高い粘着力を有し、また剥離時には作業性がよく
且つ半導体ウエハを破損しない程度の低い粘着力が必要
とされている。When the adhesive film is attached to the surface of the wafer and the back surface of the wafer is ground, one of the properties required for the adhesive film is an adhesive property to the surface of the semiconductor wafer. Specifically, it is necessary to have a high adhesive force that does not cause peeling when the wafer back surface is ground, and a low adhesive force that has good workability during peeling and does not damage the semiconductor wafer.
【0004】しかし、近年、大容量化、高集積化、半導
体チップの量産化、小型軽量化等が図られるに伴い、半
導体ウエハは大口径化し、また半導体ウエハの厚みはさ
らに薄く成る傾向があり、半導体ウエハ裏面研削時の表
面保護と、剥離の際の作業性、非破損性のバランスを保
つことが難しくなってきている。However, in recent years, as the capacity, the degree of integration, the mass production of semiconductor chips, and the size and weight of the semiconductor chips have been increased, the diameter of the semiconductor wafer has tended to increase, and the thickness of the semiconductor wafer has tended to decrease further. It has become difficult to maintain a balance between surface protection during grinding of the back surface of the semiconductor wafer, workability during peeling, and non-breakability.
【0005】これらの問題を解決する方法として、例え
ば、特開昭60−189938号公報には、半導体ウエ
ハの裏面を研磨するにあたり、このウエハの表面に感圧
性接着フィルムを貼り付け、上記の研磨後この接着フィ
ルムを剥離する半導体ウエハの保護方法において、上記
の感圧性接着フィルムが光透過性の支持体とこの支持体
上に設けられた光照射により硬化し三次元網状化する性
質を有する感圧性接着剤層とからなり、研磨後この接着
フィルムを剥離する前にこの接着フィルムに光照射する
ことを特徴とする半導体ウエハの保護方法が開示されて
いる。As a method for solving these problems, for example, Japanese Patent Application Laid-Open No. 60-189938 discloses a method of polishing a back surface of a semiconductor wafer by attaching a pressure-sensitive adhesive film to the surface of the wafer and polishing the back surface of the wafer. Then, in the method for protecting a semiconductor wafer in which this adhesive film is peeled off, the pressure-sensitive adhesive film has a light-transmitting support and a light-sensitive material having a property of being hardened by light irradiation provided on the support to form a three-dimensional network. A method for protecting a semiconductor wafer, comprising a pressure-sensitive adhesive layer and irradiating the adhesive film with light after polishing and before peeling the adhesive film, is disclosed.
【0006】しかし、該発明に開示されている光照射に
より硬化し三次元網状化する性質を有する感圧性接着剤
層(粘着剤層)は、ラジカル重合により重合する粘着剤
層であるため、ウエハと粘着剤層の間に酸素が入り込ん
だ場合には、酸素の重合禁止効果により硬化反応が十分
に進まず、半導体ウエハ裏面研磨後の剥離時に凝集力の
低い未硬化の粘着剤がウエハ表面を汚染することがあっ
た。集積回路が形成された半導体ウエハ表面には複雑な
凹凸があり、空気(酸素)を全く挟み込まずに貼付する
ことは不可能である。また、貼付のために酸素を除いた
系を作り出すには大掛かりな装置と大きなコストが必要
となる。この様な粘着剤層に起因する汚染は、溶剤等に
よる洗浄で除去できる場合もあるが、ほとんどの場合、
完全に除去できないのが現状である。However, the pressure-sensitive adhesive layer (pressure-sensitive adhesive layer) disclosed in the present invention, which has the property of being cured by light irradiation and of forming a three-dimensional network, is a pressure-sensitive adhesive layer which is polymerized by radical polymerization. When oxygen enters between the adhesive layer and the adhesive layer, the curing reaction does not proceed sufficiently due to the effect of inhibiting the polymerization of oxygen. May be contaminated. There are complicated irregularities on the surface of the semiconductor wafer on which the integrated circuit is formed, and it is impossible to attach the semiconductor wafer without sandwiching air (oxygen) at all. In addition, a large-scale apparatus and a large cost are required to create a system from which oxygen is removed for application. Contamination caused by such an adhesive layer can be removed by washing with a solvent or the like, but in most cases,
At present, it cannot be completely removed.
【0007】近年、半導体ウエハの大口径化、薄層化お
よびICの高性能化に伴い、半導体ウエハ表面への汚染
が少なく、且つ、ウエハ裏面の研削時や粘着フィルムの
剥離時にウエハを破損しない半導体ウエハ裏面研削用粘
着フィルム及びその使用方法が望まれている。In recent years, with the increase in diameter and thickness of semiconductor wafers and the higher performance of ICs, the contamination of the front surface of the semiconductor wafer is reduced, and the wafer is not damaged when the back surface of the wafer is ground or the adhesive film is peeled off. Adhesive films for backside grinding of semiconductor wafers and methods of using the same are desired.
【0008】[0008]
【発明が解決しようとする課題】以上の点に鑑み、本発
明の目的は、半導体ウエハの裏面研削時には強い粘着力
でウエハ表面を保護し、剥離の際には冷却または加熱す
ることにより粘着力が低下して半導体ウエハを破損させ
ずに剥離することができ、尚かつ、剥離後に粘着剤層か
らの半導体ウエハ表面に付着する汚染物が殆どない、半
導体ウエハの大口径化、薄層化およびICの高性能化に
対応できる半導体ウエハ裏面研削用粘着フィルム及びそ
の使用方法を提供することにある。In view of the above points, an object of the present invention is to protect the wafer surface with a strong adhesive force when grinding the back surface of a semiconductor wafer, and to cool or heat it when peeling it. Of the semiconductor wafer can be peeled without damaging the semiconductor wafer, and there is almost no contaminant adhering to the surface of the semiconductor wafer from the adhesive layer after peeling. An object of the present invention is to provide a pressure-sensitive adhesive film for grinding the back surface of a semiconductor wafer that can be used for higher performance of ICs and a method of using the same.
【0009】[0009]
【課題を解決するための手段】本発明者らは鋭意検討し
た結果、結晶性高分子を含み、且つ、温度変化と共に粘
着力が劇的に変化する性質を有する粘着剤層が基材フィ
ルムの片面に形成された半導体ウエハ裏面研削用粘着フ
ィルムの中で、特定の粘着力特性を有する粘着フィルム
が、上記目的を達成し得て、半導体ウエハの大口径化、
薄層化およびICの高性能化に対応できる半導体ウエハ
裏面研削用粘着フィルムとして使用できることを見出
し、本発明に到った。Means for Solving the Problems As a result of intensive studies by the present inventors, a pressure-sensitive adhesive layer containing a crystalline polymer and having a property that the pressure-sensitive adhesive force changes drastically with a temperature change is a base film. Among the adhesive films for grinding the back surface of the semiconductor wafer formed on one side, an adhesive film having specific adhesive force characteristics can achieve the above-mentioned object, increasing the diameter of the semiconductor wafer,
The present invention has been found out that it can be used as a pressure-sensitive adhesive film for grinding the back surface of a semiconductor wafer, which can be applied to thinner layers and higher performance of ICs.
【0010】具体的には、粘着剤に結晶性高分子を含有
させるこにより、特定の温度範囲においてのみウエハ表
面を保護するに充分な粘着力を示し、その温度範囲外の
低温領域または高温領域では粘着力が低下することを見
出し、更に、該温度範囲において貼着、研磨処理を行
い、該温度範囲外において剥離処理を行うことにより上
記目的が達成し得ることを見出し、本発明に到った。Specifically, by containing a crystalline polymer in the pressure-sensitive adhesive, the pressure-sensitive adhesive exhibits a sufficient pressure-sensitive adhesive force to protect the wafer surface only in a specific temperature range, and a low temperature region or a high temperature region outside the temperature range. Then, it was found that the adhesive strength is lowered, and further that the above-mentioned object can be achieved by performing the adhesion and polishing treatment in the temperature range and performing the peeling treatment outside the temperature range, and thus the present invention was completed. It was
【0011】すなわち、本発明の第1発明は、基材フィ
ルムの片面に粘着剤層が設けられた半導体ウエハ裏面研
削用粘着フィルムであって、該粘着剤層が結晶性高分子
を含む粘着剤により形成され、該半導体ウエハ裏面研削
用粘着フィルムの粘着力が、−10℃以上の温度におけ
る少なくとも一部の温度範囲A〜B℃(A<B)におい
てのみ150〜2,000g/25mmであり、且つ、
A℃未満の温度領域において150g/25mm未満で
あることを特徴とする半導体ウエハ裏面研削用粘着フィ
ルムである。That is, the first invention of the present invention is a pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, wherein a pressure-sensitive adhesive layer is provided on one surface of a substrate film, the pressure-sensitive adhesive layer containing a crystalline polymer. The adhesive force of the pressure-sensitive adhesive film for grinding the back surface of a semiconductor wafer is 150 to 2,000 g / 25 mm only in at least a part of the temperature range A to B ° C. (A <B) at a temperature of −10 ° C. or higher. ,and,
A pressure-sensitive adhesive film for grinding a back surface of a semiconductor wafer, wherein the pressure-sensitive adhesive film is less than 150 g / 25 mm in a temperature range of less than A ° C.
【0012】本発明の第2発明は、基材フィルムの片面
に粘着剤層が設けられた半導体ウエハ裏面研削用粘着フ
ィルムであって、該粘着剤層が結晶性高分子を含む粘着
剤により形成され、該半導体ウエハ裏面研削用粘着フィ
ルムの粘着力が、70℃以下の温度における少なくとも
一部の温度範囲E〜F℃(E<F)においてのみ150
〜2,000g/25mmであり、且つ、F℃を超える
温度領域において150g/25mm未満であることを
特徴とする半導体ウエハ裏面研削用粘着フィルムであ
る。A second invention of the present invention is a pressure-sensitive adhesive film for grinding a back surface of a semiconductor wafer, wherein a pressure-sensitive adhesive layer is provided on one surface of a base film, the pressure-sensitive adhesive layer being formed of a pressure-sensitive adhesive containing a crystalline polymer. The adhesive force of the adhesive film for backside grinding of the semiconductor wafer is 150 only in at least a part of the temperature range E to F ° C (E <F) at a temperature of 70 ° C or less.
A pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, wherein the pressure-sensitive adhesive film is 2,000 g / 25 mm and less than 150 g / 25 mm in a temperature range exceeding F ° C.
【0013】本発明の第3発明は、半導体ウエハの裏面
研削時にその表面に貼着し、研削終了後に剥離する半導
体ウエハ裏面研削用粘着フィルムの使用方法であって、
該半導体ウエハ裏面研削用粘着フィルムが、基材フィル
ムの片面に結晶性高分子を含む粘着剤により形成された
粘着剤層を有し、その粘着力が−10℃以上の温度にお
ける少なくとも一部の温度範囲A〜B℃(A<B)にお
いてのみ150〜2,000g/25mmであり、且
つ、A℃未満の温度領域において150g/25mm未
満であり、A〜B℃の温度範囲に含まれる少なくとも一
部の温度範囲C〜D℃(A<C≦D<B、1≦C≦D≦
60)においてウエハ表面に該粘着フィルムを貼着し、
C〜D℃の温度範囲の冷却水をかけながら半導体ウエハ
の裏面を研削し、次いで、A℃未満に冷却した状態で該
粘着フィルムを剥離することを特徴とする半導体ウエハ
裏面研削用粘着フィルムの使用方法である。A third aspect of the present invention is a method of using a pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, which is adhered to the front surface of a backside surface of a semiconductor wafer and is peeled off after the grinding is completed.
The pressure-sensitive adhesive film for grinding a back surface of a semiconductor wafer has a pressure-sensitive adhesive layer formed of a pressure-sensitive adhesive containing a crystalline polymer on one surface of a base film, and the pressure-sensitive adhesive force is at least part of at a temperature of -10 ° C or higher. It is 150 to 2,000 g / 25 mm only in the temperature range A to B ° C (A <B), and less than 150 g / 25 mm in the temperature range lower than A ° C, and at least included in the temperature range A to B ° C. Partial temperature range C to D ° C (A <C ≦ D <B, 1 ≦ C ≦ D ≦
In 60), the adhesive film is attached to the wafer surface,
An adhesive film for grinding a back surface of a semiconductor wafer, which comprises grinding a back surface of a semiconductor wafer while applying cooling water in a temperature range of C to D ° C., and then peeling the adhesive film in a state of being cooled to less than A ° C. How to use.
【0014】また、本発明の第4発明は、半導体ウエハ
の裏面研削時にその表面に貼着し、研削終了後に剥離す
る半導体ウエハ裏面研削用粘着フィルムの使用方法であ
って、該半導体ウエハ裏面研削用粘着フィルムが、基材
フィルムの片面に結晶性高分子を含む粘着剤により形成
された粘着剤層を有し、その粘着力が70℃以下の温度
における少なくとも一部の温度範囲E〜F℃(E<F)
においてのみ150〜2,000g/25mmであり、
且つ、F℃を超える温度領域において150g/25m
m未満であり、E〜F℃の温度範囲に含まれる少なくと
も一部の温度範囲G〜H℃(E<G≦H<F、1≦G)
においてウエハ表面に該粘着フィルムを貼着し、G〜H
℃の温度範囲の冷却水をかけながら半導体ウエハの裏面
を研削し、次いで、F℃を超える温度に加熱した状態で
該粘着フィルムを剥離することを特徴とする半導体ウエ
ハ裏面研削用粘着フィルムの使用方法である。A fourth invention of the present invention is a method of using a pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, which is adhered to the front surface of the backside of a semiconductor wafer when the backside is ground, and is peeled off after finishing the grinding. Pressure-sensitive adhesive film has a pressure-sensitive adhesive layer formed of a pressure-sensitive adhesive containing a crystalline polymer on one surface of a substrate film, and the pressure-sensitive adhesive force is at least part of a temperature range E to F ° C at a temperature of 70 ° C or lower. (E <F)
150-2,000 g / 25 mm only in
And 150g / 25m in the temperature range over F ° C
m is less than m and at least a part of the temperature range G to H ° C included in the temperature range of E to F ° C (E <G ≦ H <F, 1 ≦ G).
The adhesive film is adhered to the wafer surface in
Use of a pressure-sensitive adhesive film for grinding a back surface of a semiconductor wafer, which comprises grinding a back surface of a semiconductor wafer while applying cooling water in a temperature range of ° C, and then peeling the pressure-sensitive adhesive film while being heated to a temperature higher than F ° C. Is the way.
【0015】本発明の半導体ウエハ裏面研削用粘着フィ
ルム(以下、粘着フィルムという)は、半導体ウエハの
裏面を研削する際には、強い粘着力でウエハ表面に粘着
してそれを保護し、ウエハの破損等を防止する。また、
剥離する際には、冷却または加熱することにより粘着力
を低下させ得るため、剥離を容易にして剥離応力による
半導体ウエハの破損を防止することができる。さらに、
粘着フィルムを剥離した後には、ウエハ表面に粘着剤層
に起因する汚染物が殆ど付着することがなく、ウエハ表
面の汚染防止にも優れた効果を発揮する。そのため、本
発明によれば、半導体ウエハの大口径化、薄層化、及び
ICの高性能化に対応できる半導体ウエハ裏面研削用粘
着フィルム及びその使用方法が提供される。The adhesive film for grinding a back surface of a semiconductor wafer of the present invention (hereinafter referred to as an adhesive film) adheres to the front surface of a semiconductor wafer with a strong adhesive force to protect it when grinding the back surface of the semiconductor wafer. Prevent damage etc. Also,
At the time of peeling, since the adhesive force can be reduced by cooling or heating, peeling can be facilitated and damage to the semiconductor wafer due to peeling stress can be prevented. further,
After the adhesive film is peeled off, contaminants due to the adhesive layer hardly adhere to the surface of the wafer, and the effect of preventing contamination of the surface of the wafer is also excellent. Therefore, according to the present invention, there is provided a pressure-sensitive adhesive film for grinding the back surface of a semiconductor wafer and a method of using the same, which can cope with an increase in the diameter of a semiconductor wafer, a reduction in the layer thickness thereof, and a high performance of an IC.
【0016】[0016]
【発明の実施の形態】本発明の粘着フィルムは、基材フ
ィルムに粘着剤層を構成する成分を含有した粘着剤溶液
またはエマルジョン液(以下、粘着剤という)を塗布、
乾燥して粘着剤層を形成することにより製造される。こ
の場合、環境に起因する汚染等から粘着剤層を保護する
ために粘着剤層の表面に剥離フィルムを貼着することが
好ましい。また、剥離フィルムの片表面に粘着剤を塗
布、乾燥して粘着剤層を形成した後、粘着剤層の表面に
基材フィルムを貼付して粘着剤層を基材フィルム側に転
着する方法によっても製造される。この場合は、粘着剤
層を乾燥する際等において粘着剤層表面が汚染されない
利点がある。BEST MODE FOR CARRYING OUT THE INVENTION The pressure-sensitive adhesive film of the present invention is obtained by applying a pressure-sensitive adhesive solution or emulsion liquid (hereinafter referred to as pressure-sensitive adhesive) containing a component constituting a pressure-sensitive adhesive layer to a base film,
It is manufactured by drying to form an adhesive layer. In this case, it is preferable to attach a release film to the surface of the pressure-sensitive adhesive layer in order to protect the pressure-sensitive adhesive layer from contamination caused by the environment. Also, a method of applying a pressure-sensitive adhesive on one surface of a release film and drying to form a pressure-sensitive adhesive layer, then attaching a substrate film to the surface of the pressure-sensitive adhesive layer and transferring the pressure-sensitive adhesive layer to the substrate film side It is also manufactured by In this case, there is an advantage that the surface of the pressure-sensitive adhesive layer is not contaminated when the pressure-sensitive adhesive layer is dried.
【0017】基材フィルムまたは剥離フィルムのいずれ
の片表面に粘着剤塗布液等を塗布するかは、基材フィル
ム及び剥離フィルムの耐熱性、表面張力、半導体ウエハ
表面への汚染性等を考慮して決める。例えば、剥離フィ
ルムの耐熱性が基材フィルムのそれより優れている場合
は、剥離フィルムの表面に粘着剤層を設けた後、基材フ
ィルムへ転写する。耐熱性が同等または基材フィルムの
方が優れている場合は、基材フィルムの表面に粘着剤層
を設け、その表面に剥離フィルムを貼付する。しかし、
粘着フィルムは、剥離フィルムを剥離したときに露出す
る粘着剤層の表面を介して半導体ウエハ表面に貼付され
ることを考慮し、粘着剤層による半導体ウエハ表面の汚
染防止を図るためには、耐熱性の良好な剥離フィルムを
使用し、その表面に粘着剤塗布液を塗布、乾燥して粘着
剤層を形成する方法が好ましい。Which surface of the base film or the release film is to be coated with the pressure sensitive adhesive coating liquid or the like is determined in consideration of heat resistance, surface tension of the base film and the release film, contamination of the semiconductor wafer surface, and the like. Decide. For example, when the heat resistance of the release film is superior to that of the base film, an adhesive layer is provided on the surface of the release film and then transferred to the base film. If the heat resistance is the same or the base film is better, a pressure-sensitive adhesive layer is provided on the surface of the base film, and a release film is attached to the surface. But,
Considering that the adhesive film is attached to the semiconductor wafer surface via the surface of the adhesive layer that is exposed when the release film is peeled off, in order to prevent contamination of the semiconductor wafer surface with the adhesive layer, heat-resistant A method is preferred in which a release film having good properties is used, and a pressure-sensitive adhesive coating solution is applied to the surface thereof and dried to form a pressure-sensitive adhesive layer.
【0018】本発明の半導体ウエハ裏面研削用粘着フィ
ルムの使用方法は、特定の温度範囲において粘着剤層を
介して半導体ウエハの表面に貼着し、ウエハ表面を保護
してウエハ裏面を研削し、次いで、該温度範囲外に冷却
または加熱して粘着剤層の温度を該温度範囲外とした後
に剥離する方法である。The method of using the pressure-sensitive adhesive film for grinding the back surface of a semiconductor wafer according to the present invention is such that it is adhered to the surface of a semiconductor wafer via a pressure-sensitive adhesive layer in a specific temperature range, the front surface of the wafer is protected and the back surface of the wafer is ground. Next, it is a method of cooling or heating to outside the temperature range to bring the temperature of the pressure-sensitive adhesive layer out of the temperature range, and then peeling.
【0019】先ず、本発明の粘着フィルムの製造方法に
ついて説明する。本発明の粘着フィルムは、通常、基材
フィルムの片表面に粘着剤を塗布、乾燥して粘着剤層を
形成する方法、または、剥離フィルムの片表面に粘着剤
を塗布、乾燥して粘着剤層を形成した後、基材フィルム
の片表面に転着する方法により製造される。First, the method for producing the pressure-sensitive adhesive film of the present invention will be described. The pressure-sensitive adhesive film of the present invention is usually a method in which a pressure-sensitive adhesive is applied to one surface of a base film and dried to form a pressure-sensitive adhesive layer, or a pressure-sensitive adhesive is applied to one surface of a release film and dried to obtain a pressure-sensitive adhesive. After the layer is formed, it is produced by a method of transferring to one surface of the base film.
【0020】基材フィルムまたは剥離フィルムの片表面
に粘着剤を塗布する方法としては、従来公知の塗布方
法、例えば、ロールコーター法、リバースロールコータ
ー法、グラビアロールコーター法、バーコーター法、コ
ンマコーター法、ダイコーター法等が採用できる。ま
た、粘着剤を塗布する方法の他に、基材フィルムと粘着
剤層を共押出しする方法も挙げられる。粘着剤層や基材
フィルム等の性質に応じて、これらの方法でも適宜選択
できる。As a method for applying the pressure-sensitive adhesive to one surface of the substrate film or the release film, conventionally known coating methods such as roll coater method, reverse roll coater method, gravure roll coater method, bar coater method and comma coater are used. Method, die coater method, etc. can be adopted. In addition to the method of applying the pressure-sensitive adhesive, a method of co-extruding the base film and the pressure-sensitive adhesive layer can also be mentioned. These methods can be appropriately selected depending on the properties of the pressure-sensitive adhesive layer, the base film, and the like.
【0021】本発明の粘着フィルムに用いる基材フィル
ムとして、合成樹脂、天然ゴム、合成ゴム等から製造さ
れたフィルムが挙げられる。具体的に例示するならば、
エチレン−酢酸ビニル共重合体、エチレン−メタクリル
酸共重合体、ポリブタジエン、軟質塩化ビニル樹脂、ポ
リオレフィン、ポリエステル、ポリアミド、アイオノマ
ー等の樹脂、およびそれらの共重合体エラストマー、お
よびジエン系、ニトリル系、シリコーン系、アクリル系
等の合成ゴム等のフィルムが挙げられる。基材フィルム
は単層体であっても、また、積層体であってもよい。Examples of the base film used for the pressure-sensitive adhesive film of the present invention include films produced from synthetic resins, natural rubbers, synthetic rubbers and the like. To give a concrete example,
Ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, polybutadiene, soft vinyl chloride resin, polyolefin, polyester, polyamide, ionomer, and other resins, and their copolymer elastomers, and diene, nitrile, and silicone And films of synthetic rubber such as acryl based. The base film may be a monolayer or a laminate.
【0022】基材フィルムの厚みは、半導体ウエハ裏面
を研削する際のウエハの破損防止、ウエハ表面への貼付
作業性および剥離作業性等に影響する。かかる観点か
ら、基材フィルムの厚みは、通常、10〜2000μm
である。好ましくは100〜300μmである。基材フ
ィルムの厚み精度は、粘着フィルムの厚み精度に影響を
与え、ひいては裏面研削後の半導体ウエハの厚み精度に
影響を与える。従って、基材フィルムは上記範囲の厚み
において±5μm以内の精度で作成されたものが好まし
い。さらに好ましくは±3μm以内である。The thickness of the base film affects the prevention of breakage of the wafer when the back surface of the semiconductor wafer is ground, the workability of sticking to the front surface of the wafer and the workability of peeling. From this viewpoint, the thickness of the base film is usually 10 to 2000 μm.
It is. It is preferably 100 to 300 μm. The thickness accuracy of the base film affects the thickness accuracy of the adhesive film, which in turn affects the thickness accuracy of the semiconductor wafer after backside grinding. Therefore, it is preferable that the base film is formed with an accuracy of ± 5 μm or less in the above thickness range. More preferably, it is within ± 3 μm.
【0023】裏面を研削する際の半導体ウエハの破損防
止を考慮すると、基材フィルムの硬度は、ASTM−D
−2240に規定されるショアーD型硬度が40以下で
ある樹脂をフィルム状に成形加工した弾性フィルム、例
えば、エチレン−酢酸ビニル共重合体フィルム、ポリブ
タジエンフィルム等が好ましく用いられる。この場合、
基材フィルムの粘着剤層が設けられる面の反対側の面
に、これより硬いフィルム、具体的には、ショアーD型
硬度が40を超える樹脂をフィルム状に成形加工したフ
ィルムを積層することが好ましい。そのことにより、粘
着フィルムの剛性が増し、貼付作業性及び剥離作業性が
改善される。Considering prevention of damage to the semiconductor wafer when the back surface is ground, the hardness of the base film is ASTM-D.
An elastic film obtained by forming a resin having a Shore D-type hardness of 40 or less specified in -2240 into a film shape, for example, an ethylene-vinyl acetate copolymer film, a polybutadiene film and the like are preferably used. in this case,
On the surface of the base film opposite to the surface on which the pressure-sensitive adhesive layer is provided, a film harder than this, specifically, a film formed by processing a resin having a Shore D-type hardness of more than 40 into a film may be laminated. preferable. Thereby, the rigidity of the pressure-sensitive adhesive film is increased, and the sticking workability and the peeling workability are improved.
【0024】また、半導体ウエハの裏面を研削した後に
施される酸によるエッチング処理の際にも引続き、半導
体ウエハ裏面研削用粘着フィルムを貼付して半導体ウエ
ハの表面を保護する場合には、耐酸性に優れた基材フィ
ルムを使用することが好ましい。耐酸性フィルムを基材
フィルムの粘着剤層と反対側に積層してもよい。耐酸性
のフィルムしては、例えばポリプロピレンフィルム等が
挙げられる。基材フィルムと粘着剤層との接着力を向上
させるため、基材フィルムの粘着剤層を設ける面にはコ
ロナ放電処理または化学処理等を施すことが好ましい。
また、基材フィルムと粘着剤層の間に下塗り剤を用いて
もよい。In addition, when the back surface of the semiconductor wafer is ground and the etching process with an acid is subsequently performed, and when an adhesive film for grinding the back surface of the semiconductor wafer is attached to protect the front surface of the semiconductor wafer, the acid resistance is reduced. It is preferable to use a substrate film having excellent properties. An acid resistant film may be laminated on the side of the base film opposite to the adhesive layer. Examples of the acid resistant film include polypropylene film and the like. In order to improve the adhesive strength between the substrate film and the pressure-sensitive adhesive layer, it is preferable to subject the surface of the substrate film on which the pressure-sensitive adhesive layer is provided to a corona discharge treatment or a chemical treatment.
An undercoat may be used between the base film and the pressure-sensitive adhesive layer.
【0025】本発明の粘着フィルムの粘着剤表面に配設
する剥離フィルムとして、ポリプロピレン、ポリエチレ
ンテレフタレート等の合成樹脂フィルムが挙げられる。
必要に応じてその表面にシリコーン処理等が施されたも
のが好ましい。剥離フィルムの厚みは、通常10〜20
00μmである。好ましくは30〜100μmである。Examples of the release film provided on the pressure-sensitive adhesive surface of the pressure-sensitive adhesive film of the present invention include synthetic resin films such as polypropylene and polyethylene terephthalate.
Preferably, the surface thereof is subjected to a silicone treatment or the like as necessary. The thickness of the release film is usually 10 to 20.
00 μm. Preferably it is 30 to 100 μm.
【0026】本発明の粘着フィルムに設ける粘着剤層
は、結晶性高分子を含有し、特定の温度範囲において、
半導体ウエハ表面を保護するに十分な粘着力を示す粘着
剤によって形成される。粘着剤の具体例としては、例え
ば、特表平6−510548号公報(国際公開番号:W
O92/13901)に記載されている粘着剤が好まし
い。すなわち、通常、粘着テープ等の粘着剤層に使用さ
れている粘着剤組成物(以下、通常の粘着剤という)と
結晶性高分子との混合物である。通常、その混合割合
は、通常の粘着剤約50〜99.7重量部に対して、結
晶性高分子が約0.3〜50重量部の範囲で混合するこ
とが好ましい。より好ましくは、通常の粘着剤約65〜
95重量部に対して、結晶性高分子が約5〜35重量部
であり、さらに好ましくは、通常の粘着剤約70〜90
重量部に対して、結晶性高分子が約10〜30重量部で
あり、最も好ましくは、通常の粘着剤約70〜80重量
部に対して結晶性高分子が約20〜約30重量部であ
る。The pressure-sensitive adhesive layer provided on the pressure-sensitive adhesive film of the present invention contains a crystalline polymer, and within a specific temperature range,
It is formed of an adhesive having an adhesive force sufficient to protect the surface of the semiconductor wafer. Specific examples of the adhesive include, for example, Japanese Patent Publication No. 6-510548 (International Publication Number: W).
The adhesives described in O92 / 13901) are preferred. That is, it is a mixture of a pressure-sensitive adhesive composition that is usually used for a pressure-sensitive adhesive layer such as a pressure-sensitive adhesive tape (hereinafter referred to as a normal pressure-sensitive adhesive) and a crystalline polymer. Usually, the mixing ratio is preferably in the range of about 0.3 to 50 parts by weight of the crystalline polymer with respect to about 50 to 99.7 parts by weight of the usual adhesive. More preferably, a conventional adhesive of about 65-
The amount of the crystalline polymer is about 5 to 35 parts by weight with respect to 95 parts by weight, and more preferably, the ordinary pressure sensitive adhesive is about 70 to 90 parts by weight.
The crystalline polymer is about 10 to 30 parts by weight, and most preferably about 20 to about 30 parts by weight of the crystalline polymer to about 70 to 80 parts by weight of the conventional adhesive. is there.
【0027】通常の粘着剤としては、天然ゴム系粘着
剤、並びに、スチレン−ブタジエン共重合体系粘着剤、
及び、炭素数1〜9のアルキル基を有するポリアクリル
酸アルキルエステルまたはその共重合体等のアクリル系
粘着剤等の合成ゴム系粘着剤等が挙げられ、これらは単
独でも2種以上の混合物であってもよい。Usual adhesives include natural rubber adhesives, styrene-butadiene copolymer adhesives,
And synthetic rubber adhesives such as acrylic adhesives such as polyacrylic acid alkyl esters having a C 1 to C 9 alkyl group or copolymers thereof, and the like, which may be used alone or in a mixture of two or more kinds. It may be.
【0028】これらの通常の粘着剤は架橋剤を用いて凝
集力や粘着力特性を調整する必要がある場合には、架橋
点となりうる官能基を有していることが好ましい。官能
基としてはカルボキシル基、水酸基、アミノ基等が挙げ
られる。またこれらの通常の粘着剤には、適宜、可塑
剤、粘着付与剤、安定剤等を混合してもよい。These ordinary pressure-sensitive adhesives preferably have a functional group which can serve as a crosslinking point when it is necessary to adjust the cohesive strength and adhesive strength characteristics by using a crosslinking agent. Examples of the functional group include a carboxyl group, a hydroxyl group and an amino group. Further, a plasticizer, a tackifier, a stabilizer and the like may be appropriately mixed with these ordinary pressure-sensitive adhesives.
【0029】結晶性高分子としては、側鎖結晶性高分
子、主鎖結晶性高分子等が挙げられる。粘着力の温度変
化への依存性を考慮すると前者の方が好ましい。側鎖結
晶性高分子としては、重合性炭素−炭素2重結合をもつ
1種以上の単量体であって、重合した際に結晶化が可能
となる側鎖を有する単量体(以下、SCC単量体と称す
る)を重合して得られる重合体または共重合体、並び
に、SCC単量体及びSCC単量体と共重合可能な他の
単量体とを共重合して得られる共重合体が挙げられる。
SCC単量体は単独で使用してもよいし、2種以上を混
合して使用してもよい。また、SCC単量体と共重合可
能な他の単量体も2種以上を混合して使用してもよい。Examples of the crystalline polymer include a side chain crystalline polymer and a main chain crystalline polymer. The former is more preferable in consideration of the dependence of the adhesive strength on the temperature change. The side chain crystalline polymer is one or more kinds of monomers having a polymerizable carbon-carbon double bond, and a monomer having a side chain that can be crystallized when polymerized (hereinafter, A polymer or copolymer obtained by polymerizing SCC monomer), and a copolymer obtained by copolymerizing SCC monomer and other monomer copolymerizable with SCC monomer Polymers may be mentioned.
The SCC monomers may be used alone or in combination of two or more. Further, other monomers copolymerizable with the SCC monomer may be used as a mixture of two or more kinds.
【0030】これらのSCC単量体として、炭素数10
〜50の脂肪族基を有するアクリレート、メタクリレー
ト、アクリルアミド誘導体、メタクリルアミド誘導体、
ビニルエーテル誘導体、ビニルエステル誘導体、少なく
とも一部がフッ素置換された炭素数6〜50の脂肪族基
を有するアクリレート、メタクリレート、アクリルアミ
ド誘導体、メタクリルアミド誘導体、ビニルエーテル誘
導体、ビニルエステル誘導体、並びに、炭素数8〜24
のアルキル基を有するスチレン誘導体から選ばれた少な
くとも1種の単量体等が挙げられる。These SCC monomers have 10 carbon atoms.
Acrylates, methacrylates, acrylamide derivatives, methacrylamide derivatives having ˜50 aliphatic groups,
Vinyl ether derivative, vinyl ester derivative, acrylate, methacrylate, acrylamide derivative, methacrylamide derivative, vinyl ether derivative, vinyl ester derivative, and C8 to 8 having at least a part of fluorine-substituted aliphatic group having 6 to 50 carbon atoms 24
At least one kind of monomer selected from the styrene derivatives having an alkyl group and the like.
【0031】これらの内、粘着特性の温度依存性、重合
反応性等を考慮すると、炭素数14〜50の線状脂肪族
基を有するアクリレート、メタクリレート、アクリルア
ミド誘導体、メタクリルアミド誘導体等が好ましい。さ
らに好ましくは、炭素数14〜22の線状脂肪族基を有
するアクリレート、メタクリレート、アクリルアミド誘
導体、メタクリルアミド誘導体等である。上記のSCC
単量体と共重合可能な他の単量体としては、炭素数が1
〜9のアルキル基を有するアクリル酸アルキルエステル
またはメタクリル酸アルキルエステル、酢酸ビニル、ア
クリロニトリル、スチレン等が挙げられる。Of these, acrylates, methacrylates, acrylamide derivatives, methacrylamide derivatives and the like having a linear aliphatic group having 14 to 50 carbon atoms are preferable in consideration of the temperature dependence of adhesive properties, polymerization reactivity and the like. More preferred are acrylates, methacrylates, acrylamide derivatives, and methacrylamide derivatives having a linear aliphatic group having 14 to 22 carbon atoms. SCC above
Other monomers that can be copolymerized with the monomer have a carbon number of 1
Examples thereof include alkyl acrylates or methacrylic acid alkyl esters having an alkyl group of ˜9, vinyl acetate, acrylonitrile, styrene and the like.
【0032】架橋剤を用いて凝集力や粘着力特性を調整
する必要がある場合等を考慮すると、側鎖結晶性高分子
には、架橋点となり得る官能基を有する単量体を共重合
することが好ましい。架橋点となり得る官能基を有する
単量体として、アクリル酸、メタクリル酸、イタコン
酸、メサコン酸、シトラコン酸、フマル酸、マレイン
酸、イタコン酸モノアルキルエステル、メサコン酸モノ
アルキルエステル、シトラコン酸モノアルキルエステ
ル、フマル酸モノアルキルエステル、マレイン酸モノア
ルキルエステル、アクリル酸2−ヒドロキシエチル、メ
タクリル酸2−ヒドロキシエチル、アクリルアミド、メ
タクリルアミド、ターシャル−ブチルアミノエチルアク
リレート、ターシャル−ブチルアミノエチルメタクリレ
ート等が挙げられる。Considering the case where it is necessary to adjust the cohesive strength and adhesive strength characteristics using a cross-linking agent, the side chain crystalline polymer is copolymerized with a monomer having a functional group capable of serving as a cross-linking point. It is preferable. As a monomer having a functional group that can be a crosslinking point, acrylic acid, methacrylic acid, itaconic acid, mesaconic acid, citraconic acid, fumaric acid, maleic acid, itaconic acid monoalkyl ester, mesaconic acid monoalkyl ester, citraconic acid monoalkyl Esters, fumaric acid monoalkyl ester, maleic acid monoalkyl ester, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, acrylamide, methacrylamide, tertiary-butylaminoethyl acrylate, tertiary-butylaminoethyl methacrylate and the like can be mentioned. .
【0033】また、アクリル酸グリシジル、メタクリル
酸グリシジル、イソシアネートエチルアクリレート、イ
ソシアネートエチルメタクリレート、2−(1−アジリ
ジニル)エチルアクリレート、2−(1−アジリジニ
ル)エチルメタクリレート等の自己架橋性の官能基を持
った単量体、さらには、ジビニルベンゼン、アクリル酸
ビニル、メタクリル酸ビニル、アクリル酸アリル、メア
クリル酸アリル等の多官能性の単量体を組み合わせても
よい。Further, it has a self-crosslinking functional group such as glycidyl acrylate, glycidyl methacrylate, isocyanate ethyl acrylate, isocyanate ethyl methacrylate, 2- (1-aziridinyl) ethyl acrylate, and 2- (1-aziridinyl) ethyl methacrylate. Further, a monomer, or a polyfunctional monomer such as divinylbenzene, vinyl acrylate, vinyl methacrylate, allyl acrylate, and allyl methacrylate may be combined.
【0034】粘着フィルムの粘着力特性を考慮すると、
側鎖結晶性高分子は、結晶性側鎖の質量の合計が、結晶
性高分子全体の質量の50重量%以上になるように合成
することが好ましい。より好ましくは65重量%以上で
ある。Considering the adhesive property of the adhesive film,
The side chain crystalline polymer is preferably synthesized such that the total mass of the crystalline side chains is 50% by weight or more of the total mass of the crystalline polymer. More preferably, it is 65% by weight or more.
【0035】側鎖結晶性高分子を重合する方法として
は、溶液重合法、懸濁重合法、乳化重合法等既知の様々
な方法が採用できる。重合反応機構としては、ラジカル
重合、アニオン重合、カチオン重合等が挙げられるが、
粘着剤の製造コスト等を等慮すればラジカル重合によっ
て重合することが好ましい。ラジカル重合反応によって
重合する際、ラジカル重合開始剤として、ベンゾイルパ
ーオキサイド、アセチルパーオキサイド、イソブチリル
パーオキサイド、オクタノイルパーオキサイド、ジ−タ
ーシャル−ブチルパーオキサイド、ジ−ターシャル−ア
ミルパーオキサイド等の有機過酸化物、過硫酸アンモニ
ウム、過硫酸カリウム、過硫酸ナトリウム等の無機過酸
化物、2,2’−アゾビスイソブチロニトリル、2,
2’−アゾビス−2−メチルブチロニトリル、4,4’
−アゾビス−4−シアノバレリックアシッド等のアゾ化
合物等が挙げられる。これらは、得られる側鎖結晶性高
分子の性質、重合方法に応じて適宜選択される。As a method for polymerizing the side chain crystalline polymer, various known methods such as a solution polymerization method, a suspension polymerization method and an emulsion polymerization method can be adopted. Examples of the polymerization reaction mechanism include radical polymerization, anionic polymerization, and cationic polymerization.
In consideration of the production cost of the pressure-sensitive adhesive, it is preferable to polymerize by radical polymerization. When polymerized by a radical polymerization reaction, as a radical polymerization initiator, an organic compound such as benzoyl peroxide, acetyl peroxide, isobutyryl peroxide, octanoyl peroxide, di-tertiary-butyl peroxide, di-tertiary-amyl peroxide, etc. Inorganic peroxides such as peroxides, ammonium persulfate, potassium persulfate and sodium persulfate, 2,2′-azobisisobutyronitrile, 2,
2'-azobis-2-methylbutyronitrile, 4,4 '
—Azo compounds such as azobis-4-cyanovaleric acid and the like. These are appropriately selected depending on the properties of the obtained side chain crystalline polymer and the polymerization method.
【0036】側鎖結晶性高分子としては、上記重合体の
他に、結晶性側鎖を有するものであれば、ポリエステル
系、ポリエーテル系、ポリアミド系、ポリエチレンイミ
ン系、シリコーン系等の高分子等が挙げられる。また、
主鎖結晶性高分子としては、水不溶性ポリアルキレンオ
キシド、低級アルキルポリエステル、ポリアミド、ナイ
ロン、ポリテトラヒドロフラン、及び一般式(1)〔化
1〕As the side chain crystalline polymer, in addition to the above polymers, polymers having a crystalline side chain may be used, such as polyester type, polyether type, polyamide type, polyethyleneimine type, and silicone type polymers. Etc. Also,
As the main chain crystalline polymer, water-insoluble polyalkylene oxide, lower alkyl polyester, polyamide, nylon, polytetrahydrofuran, and general formula (1)
【0037】[0037]
【化1】 (式中、Rは水素、炭素数1〜12の直鎖状または枝分
かれ状アルキル基、nは5〜50000の整数である)
で表される構造のポリ−α−オレフィン等が挙げられ
る。上記一般式(1)〔化1〕において、好ましくは、
Rが炭素数1〜8の直鎖状または枝分かれ状アルキル基
である。Embedded image (In the formula, R is hydrogen, a linear or branched alkyl group having 1 to 12 carbon atoms, and n is an integer of 5 to 50,000)
And a poly-α-olefin having a structure represented by In the general formula (1) [Chemical formula 1], preferably,
R is a linear or branched alkyl group having 1 to 8 carbon atoms.
【0038】粘着特性の温度依存性、半導体ウエハ表面
への汚染性を考慮すると、上記結晶性高分子は3,50
0から900,000程度の分子量を有するものが好ま
しい。これらの結晶性高分子の分子量は、特に粘着特性
の温度依存性に影響を与え、分子量によって、ウエハの
表面に貼着した際にウエハの表面を保護するに充分な粘
着力を示す温度範囲(以下、この温度範囲をA〜B℃の
温度範囲、または、E〜F℃の温度範囲という)が異な
る傾向にある。例えば、結晶性高分子の分子量が大きく
なるに従い、温度範囲の上限BまたはFの値が大きくな
る傾向があり、特に、第2および第4発明の場合、分子
量が大きくなりすぎると、粘着剤層とウエハ表面の間に
化学的な相互作用(ウエハ表面の腐食、汚染等)を引き
起こす温度、粘着剤層の分解温度、基材フィルムの軟化
温度等、を越える温度に加熱しても粘着フィルムを剥離
することが出来なくなることがある。従って、結晶性高
分子の分子量は半導体ウエハの裏面研削工程における温
度条件(冷却水の温度、剥離時の温度等)、ウエハ表面
への汚染性等を考慮して決定する必要がある。Considering the temperature dependence of the adhesive property and the contamination of the surface of the semiconductor wafer, the crystalline polymer is 3,50.
Those having a molecular weight of about 0 to 900,000 are preferable. The molecular weight of these crystalline macromolecules particularly affects the temperature dependence of the adhesive property, and the molecular weight causes a temperature range (adhesive strength sufficient to protect the surface of the wafer when adhered to the surface of the wafer). Hereinafter, this temperature range tends to be different in the temperature range of A to B ° C or the temperature range of E to F ° C. For example, as the molecular weight of the crystalline polymer increases, the upper limit B or F of the temperature range tends to increase. Particularly, in the case of the second and fourth inventions, when the molecular weight becomes too large, the pressure-sensitive adhesive layer Even if the adhesive film is heated to a temperature exceeding the temperature that causes a chemical interaction between the wafer surface and the wafer surface (corrosion, contamination, etc. of the wafer surface), the decomposition temperature of the adhesive layer, the softening temperature of the base film, etc. It may not be possible to peel it off. Therefore, it is necessary to determine the molecular weight of the crystalline polymer in consideration of temperature conditions (cooling water temperature, peeling temperature, etc.) in the back surface grinding process of the semiconductor wafer, contamination of the wafer surface, and the like.
【0039】例えば、E〜F℃の温度範囲においてのみ
ウエハの表面を保護するに充分な粘着力を示す粘着剤が
形成された粘着フィルムを、F℃の温度範囲外に加熱し
て剥離する場合、分子量は3,500から25,000
程度の範囲に調整することが好ましく、より好ましく
は、3,500から12,000程度の範囲である。For example, when a pressure-sensitive adhesive film formed with a pressure-sensitive adhesive having a sufficient pressure-sensitive adhesive strength to protect the surface of the wafer only in the temperature range of E to F ° C. is peeled off by heating it outside the temperature range of F ° C. , Molecular weight is 3,500 to 25,000
It is preferable to adjust to a range of about 3500, and more preferably about 3500 to 12,000.
【0040】また、A〜B℃の温度範囲においてのみウ
エハの表面を保護するに充分な粘着力を示す粘着剤が形
成された粘着フィルムを、A℃の温度範囲外に冷却によ
って剥離する場合には、何れの分子量でも特に問題はな
いが、ウエハ表面への汚染性を考慮するとより高い分子
量が好ましく、従って25,000から900,000
程度の範囲に調整することが好ましく、より好ましく
は、100,000から900,000程度の範囲であ
る。When the pressure-sensitive adhesive film formed with the pressure-sensitive adhesive having sufficient pressure-sensitive adhesive strength to protect the wafer surface only in the temperature range of A to B ° C. is peeled off by cooling outside the temperature range of A ° C. Has no particular problem with any molecular weight, but a higher molecular weight is preferable in view of contamination on the wafer surface, and therefore 25,000 to 900,000.
It is preferably adjusted to a range of about 100,000 to 900,000.
【0041】通常の粘着剤と結晶性高分子の混合物は、
粘着力特性、凝集力の調整、ウエハ表面への汚染性等を
考慮して、必要に応じて、架橋させてもよい。ウエハの
凹凸の状態によっても異なるが、ウエハ裏面研削後、冷
却してから粘着フィルムを剥離する場合、架橋させた方
が、粘着力が低下し易くなる傾向がある。架橋方法とし
ては、架橋剤による架橋、光や放射線等による架橋等既
知の架橋方法の中から適宜選択することができるが、架
橋方法の簡便さを考慮すると架橋剤による架橋が好まし
い。The usual mixture of the adhesive and the crystalline polymer is
It may be crosslinked, if necessary, in consideration of adhesive property, adjustment of cohesive force, contamination of the wafer surface, and the like. Although it depends on the unevenness of the wafer, when the adhesive film is peeled off after cooling after grinding the back surface of the wafer, the adhesive strength tends to be lowered more easily by crosslinking. The cross-linking method can be appropriately selected from known cross-linking methods such as cross-linking with a cross-linking agent and cross-linking with light or radiation, but cross-linking with a cross-linking agent is preferable in consideration of the simplicity of the cross-linking method.
【0042】架橋剤としては、テトラメチレンジイソシ
アネート、ヘキサメチレンジイソシアネート、トリメチ
ロールプロパンのトルエンジイソシアネート3付加物、
ポリイソシアネート等のイソシアネート系化合物、ソル
ビトールポリグリシジルエーテル、ポリグリセロールポ
リグリシジルエーテル、ペンタエリスリトールポリグリ
シジルエーテル、ジグリセロールポリグリシジルエーテ
ル、グリセロールポリグリシジルエーテル、ネオペンチ
ルグリコールジグリシジルエーテル、レソルシンジグリ
シジルエーテル等のエポキシ系化合物、トリメチロール
プロパン−トリ−β−アジリジニルプロピオネート、テ
トラメチロールメタン−トリ−β−アジリジニルプロピ
オネート、N,N’−ジフェニルメタン−4,4’−ビ
ス(1−アジリジンカルボキシアミド)、N,N’−ヘ
キサメチレン−1,6−ビス(1−アジリジンカルボキ
シアミド)、N,N’−トルエン−2,4−ビス(1−
アジリジンカルボキシアミド)、トリメチロールプロパ
ン−トリ−β−(2−メチルアジリジン)プロピオネー
ト等のアジリジン系化合物、及びヘキサメトキシメチロ
ールメラミン等のメラミン系化合物等が挙げられる。こ
れらは単独で使用してもよいし、2種以上を併用しても
よい。As the cross-linking agent, tetramethylene diisocyanate, hexamethylene diisocyanate, trimethylolpropane toluene diisocyanate 3 adduct,
Isocyanate compounds such as polyisocyanate, sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether, glycerol polyglycidyl ether, neopentyl glycol diglycidyl ether, resorcin diglycidyl ether, etc. Epoxy compounds, trimethylolpropane-tri-β-aziridinylpropionate, tetramethylolmethane-tri-β-aziridinylpropionate, N, N′-diphenylmethane-4,4′-bis (1- Aziridinecarboxamide), N, N'-hexamethylene-1,6-bis (1-aziridinecarboxamide), N, N'-toluene-2,4-bis (1-
Aziridine compounds such as aziridinecarboxamide) and trimethylolpropane-tri-β- (2-methylaziridine) propionate; and melamine compounds such as hexamethoxymethylolmelamine. These may be used alone or in combination of two or more.
【0043】架橋剤の添加量は、粘着剤層に求められる
粘着特性、凝集力、通常の粘着剤および結晶性高分子の
性質等により異なるが、通常、通常の粘着剤と結晶性高
分子の混合物100重量部に対して0.01〜30重量
部の範囲で適宜選択される。The amount of the cross-linking agent added varies depending on the adhesive properties required for the pressure-sensitive adhesive layer, the cohesive strength, the properties of the ordinary pressure-sensitive adhesive and the crystalline polymer, and the like. It is appropriately selected within the range of 0.01 to 30 parts by weight with respect to 100 parts by weight of the mixture.
【0044】粘着剤層の厚みは、半導体ウエハの表面状
態、形状、裏面の研削方法等により適宣決められるが、
半導体ウエハの裏面を研削している時の粘着力、研削が
完了した後の剥離性等を勘案すると、通常2〜100μ
m程度である。好ましくは5〜70μmである。The thickness of the pressure-sensitive adhesive layer is appropriately determined depending on the surface condition, shape, grinding method of the back surface of the semiconductor wafer, etc.
Considering the adhesive force when grinding the back surface of the semiconductor wafer, the releasability after the grinding is completed, etc., it is usually 2 to 100 μm.
m. Preferably it is 5-70 μm.
【0045】上記のようにして得られる本発明の粘着フ
ィルムは、半導体ウエハ表面に粘着フィルムを貼着する
工程から該ウエハ裏面の研削工程を経て粘着フィルムを
剥離する工程の直前に到るまでの間、ウエハ表面にしっ
かりと貼着してウエハ表面を保護するに充分な粘着力を
有する粘着フィルムである。ここで、ウエハ表面を保護
するに充分な粘着力とは、ウエハ裏面の研作中に剥離し
たり、ウエハ表面と粘着剤層との間に冷却水の侵入が生
じない程度の粘着力のことであり、具体的には、JIS
Z 0237に規定される方法に準拠して、被着体と
してSUS304−BA板を用い、剥離速度300mm
/min.、剥離角度180度の条件下で測定した粘着
力が所定の温度において、通常、150〜2000g/
25mmの範囲内であることを意味する。好ましくは2
00〜2000g/25mmの範囲内である。The pressure-sensitive adhesive film of the present invention obtained as described above extends from the step of adhering the pressure-sensitive adhesive film to the front surface of the semiconductor wafer to the step immediately before the step of peeling the pressure-sensitive adhesive film after the step of grinding the back surface of the wafer. The adhesive film has a sufficient adhesive force to firmly adhere to the wafer surface and protect the wafer surface. Here, the adhesive force sufficient to protect the wafer surface is an adhesive force that does not peel off during polishing of the wafer back surface or that cooling water does not enter between the wafer surface and the adhesive layer. Yes, specifically, JIS
According to the method specified in Z 0237, a SUS304-BA plate is used as an adherend, and a peeling speed is 300 mm.
/ Min. The adhesive strength measured under a peeling angle of 180 degrees is usually 150 to 2000 g / at a predetermined temperature.
It means within a range of 25 mm. Preferably 2
It is within the range of 00 to 2000 g / 25 mm.
【0046】かくして、上記の如くして製造される本発
明に係わる粘着フィルムは、−10℃以上の温度におけ
る少なくとも一部の温度範囲A〜B℃(A<B)におい
てのみ150〜2,000g/25mmの粘着力を示
し、且つ、A℃未満の温度領域に冷却することにより、
その粘着力が150g/25mm未満に低下するもので
ある。温度範囲A〜B℃(A<B)における好ましい粘
着力は200〜2000g/25mmである。A℃未満
の温度領域における好ましい粘着力は80g/25mm
以下である。また、好ましいA〜B℃の温度範囲は、1
0℃以上の温度範囲における少なくとも一部の温度範囲
である。ここで、「−10℃以上の温度範囲」に於ける
上限の温度には特に制限はないが、実質的には基材フィ
ルムが加熱により軟化し、本発明で定義する粘着力の測
定が事実上不可能となる温度であり、具体的には、JI
S K 2207(環球法)に準拠して測定した基材フ
ィルムの原料樹脂(即ちフィルム化前の樹脂)の軟化温
度+50℃程度の温度が挙げられる。基材フィルムが融
点を有する場合は融点程度の温度が上限温度である。Thus, the pressure-sensitive adhesive film according to the present invention produced as described above is 150 to 2,000 g only in at least a part of the temperature range A to B ° C. (A <B) at a temperature of -10 ° C. or higher. By exhibiting an adhesive force of / 25 mm and cooling to a temperature range of less than A ° C.,
The adhesive strength is reduced to less than 150 g / 25 mm. The preferable adhesive strength in the temperature range A to B ° C. (A <B) is 200 to 2000 g / 25 mm. The preferred adhesive strength in the temperature range below A ° C is 80 g / 25 mm
It is as follows. The preferred temperature range from A to B ° C is 1
It is at least a part of the temperature range in the temperature range of 0 ° C. or higher. Here, there is no particular limitation on the upper limit temperature in the “temperature range of −10 ° C. or higher”, but the substrate film is practically softened by heating, and the adhesive strength defined in the present invention is actually measured. It is a temperature that is impossible to achieve, specifically, JI
The softening temperature of the raw material resin of the base film (that is, the resin before film formation) measured according to SK 2207 (ring and ball method) is about + 50 ° C. When the base film has a melting point, the temperature around the melting point is the upper limit temperature.
【0047】また、本発明の他の発明に係わる粘着フィ
ルムは、70℃以下の温度における少なくとも一部の温
度範囲E〜F℃(E<F)においてのみ150〜2,0
00g/25mmの粘着力を示し、且つ、F℃を超える
温度領域に加熱することにより、その粘着力が150g
/25mm未満に低下するものである。好ましくは、E
〜F℃の温度範囲は、60℃以下の温度における少なく
とも一部の温度範囲である。温度範囲E〜F℃(E<
F)における好ましい粘着力は200〜2000g/2
5mmである。F℃を超える温度領域における好ましい
粘着力は80g/25mm以下である。ここで、「70
℃以下の温度範囲」に於ける下限の温度には特に制限は
ないが、実質的には、基材フィルムが冷却により脆性を
示すようになり、本発明で定義する粘着力の測定が事実
上不可能となる温度である。具体的には、ASTM D
−746に準拠して測定した基材フィルムの原料樹脂
(即ちフィルム化前の樹脂)の脆化温度−100℃程度
の温度が挙げられる。Further, the pressure-sensitive adhesive film according to another invention of the present invention is 150-2,0 only in at least part of the temperature range E-F ° C (E <F) at a temperature of 70 ° C or lower.
It shows an adhesive strength of 00g / 25mm, and the adhesive strength is 150g by heating in the temperature range over F ° C.
/ 25 mm or less. Preferably, E
The temperature range of to F ° C is at least a part of the temperature range of 60 ° C or lower. Temperature range E to F ° C (E <
The preferred adhesive strength in F) is 200 to 2000 g / 2.
5 mm. The preferable adhesive strength in the temperature range exceeding F ° C. is 80 g / 25 mm or less. Here, "70
There is no particular limitation on the lower limit temperature in the "temperature range of ℃ or less", but substantially, the base film becomes brittle by cooling, and the adhesion force defined in the present invention is practically measured. It is a temperature that makes it impossible. Specifically, ASTM D
The embrittlement temperature of the raw material resin of the base material film (that is, the resin before being formed into a film) measured in accordance with −746 is a temperature of about −100 ° C.
【0048】さらに、実際の作業性を考慮すると、上記
のいずれの粘着フィルムついても、少なくとも20〜2
5℃の温度範囲内において、ウエハ表面を保護するに充
分な粘着力を示すものであることが好ましい。さらに好
ましくは少なくとも15〜30℃の温度範囲内において
ウエハ表面を保護するに充分な粘着力を示すものであ
る。Further, in consideration of the actual workability, at least 20 to 2 is applied to any of the above-mentioned adhesive films.
In the temperature range of 5 ° C., it is preferable that the adhesive has sufficient adhesive force to protect the wafer surface. More preferably, it has an adhesive force sufficient to protect the wafer surface within a temperature range of at least 15 to 30 ° C.
【0049】次いで、本発明の半導体ウエハ裏面研削用
粘着フィルムの使用方法について説明する。第1の方法
として、粘着フィルムの粘着剤層から剥離フィルムを剥
離して粘着剤層表面を露出させ、その粘着剤層を介して
集積回路が形成された側の半導体ウエハの表面に、−1
0℃以上の温度における少なくとも一部の温度範囲A〜
B℃(A<B)の温度範囲に含まれる少なくとも一部の
温度範囲C〜D℃(A<C≦D<B、1≦C≦D≦6
0)においてウエハ表面に粘着フィルムを貼着し、粘着
フィルムの基材フィルム側を介して研削機のチャックテ
ーブル等に半導体ウエハを固定し、C〜D℃の温度範囲
の冷却水をかけながら半導体ウエハの裏面を研削し、次
いで、A℃未満に冷却した状態で該粘着フィルムを剥離
する方法が挙げられる。Next, a method of using the adhesive film for grinding the back surface of a semiconductor wafer of the present invention will be described. As a first method, the release film is peeled off from the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film to expose the surface of the pressure-sensitive adhesive layer, and -1 is provided on the surface of the semiconductor wafer on the side where the integrated circuit is formed via the pressure-sensitive adhesive layer.
At least a part of the temperature range A at a temperature of 0 ° C. or higher
At least a part of the temperature range C to D ° C. included in the temperature range of B ° C. (A <B) (A <C ≦ D <B, 1 ≦ C ≦ D ≦ 6
In 0), an adhesive film is attached to the surface of the wafer, the semiconductor wafer is fixed to a chuck table of a grinder through the base film side of the adhesive film, and the semiconductor is sprayed with cooling water in the temperature range of C to D ° C. A method of grinding the back surface of the wafer and then peeling off the adhesive film in a state of being cooled to less than A ° C. can be mentioned.
【0050】ウエハ表面に粘着フィルムを貼着し、且
つ、冷却水の温度である上記C〜D℃の温度範囲は、1
0≦C≦D≦40であることが好ましい。半導体ウエハ
表面を保護するに十分な粘着力を示す温度範囲に管理す
るために、研削中の冷却水の温度、研削室温等をC〜D
℃の範囲内で管理する必要がある。剥離温度は、A℃未
満ならば、任意の温度でよいが、実際の作業性を考慮す
ると、通常、−30℃以上が好ましい。An adhesive film is attached to the wafer surface, and the temperature range of C to D ° C., which is the temperature of the cooling water, is 1
It is preferable that 0 ≦ C ≦ D ≦ 40. In order to control the temperature within a temperature range showing sufficient adhesive strength to protect the surface of the semiconductor wafer, the temperature of the cooling water during grinding, the grinding room temperature, etc. are changed from C to D.
It must be controlled within the range of ° C. The peeling temperature may be any temperature as long as it is lower than A ° C, but in consideration of the actual workability, it is usually preferably -30 ° C or higher.
【0051】また、第2の方法として、粘着フィルムの
粘着剤層から剥離フィルムを剥離して粘着剤層表面を露
出させ、その粘着剤層を介して集積回路が形成された側
の半導体ウエハの表面に、70℃以下の温度に含まれる
少なくとも一部の温度範囲G〜H℃(E<G≦H<F、
1≦G)においてウエハ表面に該粘着フィルムを貼着
し、粘着フィルムの基材フィルム側を介して研削機のチ
ャックテーブル等に半導体ウエハを固定し、G〜H℃の
温度範囲の冷却水をかけながら半導体ウエハの裏面を研
削し、次いで、F℃を超える温度に加熱した状態で該粘
着フィルムを剥離する方法が挙げられる。As a second method, the release film is peeled off from the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film to expose the surface of the pressure-sensitive adhesive layer, and the semiconductor wafer on the side where the integrated circuit is formed through the pressure-sensitive adhesive layer. On the surface, at least a part of the temperature range G to H ° C. (E <G ≦ H <F, which is included in the temperature of 70 ° C. or less,
1 ≦ G), the adhesive film is adhered to the surface of the wafer, the semiconductor wafer is fixed to a chuck table of a grinding machine or the like via the base film side of the adhesive film, and cooling water in a temperature range of G to H ° C. is applied. A method may be mentioned in which the back surface of the semiconductor wafer is ground while being applied, and then the pressure-sensitive adhesive film is peeled off while being heated to a temperature higher than F ° C.
【0052】ウエハ表面に粘着フィルムを貼着し、且
つ、冷却水の温度である上記G〜H℃の温度範囲は、1
0≦G≦H≦40であることが好ましい。半導体ウエハ
表面を保護するに十分な粘着力を示す温度範囲に管理す
るために、研削中の冷却水の温度、研削室温等をG〜H
℃の範囲内で管理する必要がある。剥離温度は、F℃を
超える温度ならば任意の温度でよいが、通常、粘着剤層
とウエハ表面の間に化学的な相互作用(ウエハ表面の腐
食、汚染等)を引き起こす温度、粘着剤層の一部が分解
し始める温度、または基材フィルムの軟化温度の何れの
温度をも超えない様にすることが好ましい。具体的に
は、通常、基材フィルムの軟化温度が100℃以下の場
合にはその軟化温度未満、基材フィルムの軟化温度が1
00℃を超える場合には、100℃以下の温度で剥離す
ることが好ましい。An adhesive film is attached to the wafer surface, and the temperature range of G to H ° C., which is the temperature of the cooling water, is 1
It is preferable that 0 ≦ G ≦ H ≦ 40. In order to control the temperature range in which the adhesive force is sufficient to protect the surface of the semiconductor wafer, the temperature of the cooling water during grinding, the grinding room temperature, etc. are adjusted to G to H.
It must be controlled within the range of ° C. The peeling temperature may be any temperature as long as it is higher than F ° C., but normally, the temperature causing the chemical interaction between the pressure-sensitive adhesive layer and the wafer surface (corrosion, contamination, etc. of the wafer surface), the pressure-sensitive adhesive layer It is preferable that the temperature does not exceed a temperature at which a part of the base material begins to decompose or a softening temperature of the base film. Specifically, when the softening temperature of the base film is 100 ° C. or lower, the softening temperature is usually lower than the softening temperature, and the softening temperature of the base film is 1 or less.
When it exceeds 00 ° C, it is preferable to peel at a temperature of 100 ° C or less.
【0053】本発明の粘着フィルムの粘着力は、研削す
る半導体ウエハの口径、研削時間、半導体ウエハの表面
形状、研削後の厚み等種々を考慮して上記範囲内に適宜
調整することができる。半導体ウエハ裏面を研削する装
置、器具等、及び研削方法には特に制限はなく公知の方
法が適用できる。半導体ウエハ裏面の研削が完了した
後、粘着フィルムを剥離する前にケミカルエッチング工
程を経ることもある(この場合、ケミカルエッチング層
はA〜B℃、またはE〜F℃の範囲内に管理する必要が
ある。好ましくはC〜D℃、またはG〜H℃である。本
発明が適用できる半導体ウエハとして、シリコンウエハ
のみならず、ゲルマニウム、ガリウム−ヒ素、ガリウム
−リン、ガリウム−ヒ素−アルミニウム等のウエハが挙
げられる。The adhesive strength of the adhesive film of the present invention can be appropriately adjusted within the above range in consideration of the diameter of the semiconductor wafer to be ground, the grinding time, the surface shape of the semiconductor wafer, the thickness after grinding, and the like. There are no particular restrictions on the apparatus for grinding the back surface of the semiconductor wafer, the tool, and the grinding method, and known methods can be applied. After the back surface of the semiconductor wafer is completely ground, a chemical etching step may be performed before peeling the adhesive film (in this case, the chemical etching layer needs to be controlled within the range of A to B ° C or E to F ° C). It is preferably C to D ° C. or G to H ° C. As the semiconductor wafer to which the present invention can be applied, not only a silicon wafer but also germanium, gallium-arsenic, gallium-phosphorus, gallium-arsenic-aluminum, etc. Wafers may be mentioned.
【0054】[0054]
【実施例】以下、実施例を示して本発明についてさらに
詳細に説明する。以下に示す実施例及び比較例の中で、
半導体ウエハ裏面研削用粘着フィルムの製造(粘着剤塗
布液の調製以降)および半導体ウエハ裏面研削用粘着フ
ィルムを用いた半導体ウエハの裏面研削は全て米国連邦
規格209bに規定されるクラス1,000以下のクリ
ーン度に維持された環境において実施した。本発明はこ
れら実施例に限定されるものではない。尚、本実施例に
おいて使用された通常の粘着剤(アクリル系粘着剤)、
および結晶性高分子(側鎖結晶性高分子)の合成は、下
記調製例1〜4の方法に従って行った。また、得られた
粘着フィルムの性能および該フィルムを用いた半導体ウ
エハ裏面研削方法における各特性は、下記(1)〜
(3)の方法により評価した。The present invention will be described below in further detail with reference to examples. In the following Examples and Comparative Examples,
Manufacture of an adhesive film for grinding the backside of a semiconductor wafer (after preparation of the adhesive coating solution) and grinding of the backside of a semiconductor wafer using the adhesive film for grinding the backside of a semiconductor wafer are all of class 1,000 or less specified in US Federal Standard 209b. The test was conducted in a clean environment. The present invention is not limited to these examples. Incidentally, the usual pressure-sensitive adhesive (acrylic pressure-sensitive adhesive) used in this example,
The crystalline polymer (side-chain crystalline polymer) was synthesized according to the methods of Preparation Examples 1 to 4 below. Moreover, the performance of the obtained adhesive film and the respective characteristics in the method for grinding the back surface of a semiconductor wafer using the film are described in the following (1) to
It evaluated by the method of (3).
【0055】(1)裏面研削時の半導体シリコンウエハ
の破損数(枚数) 集積回路が形成された半導体シリコンウエハ(径:8イ
ンチ、厚み:600μm、表面の凹凸:約10μm)の
表面に、それぞれの実施例および比較例で得られた粘着
フィルムを貼付し、研削機〔(株)ディスコ製:バック
グラインダーDFG−821F/8〕を用いて,所定の
水温の水をかけて冷却しながら半導体シリコンウエハの
裏面を該ウエハの厚みが200μmになるまで研削す
る。研削終了後、所定の条件下で該フィルムを剥離す
る。各実施例および比較例毎に半導体シリコンウエハを
20枚使用し、研削を20回行い、裏面研削中に破損し
たウエハの枚数(研削中の粘着フィルムの剥離が原
因)、粘着フィルムと半導体ウエハの間に水の侵入があ
ったウエハの枚数、剥離時に破損したウエハの枚数を計
数する。(1) Number of Damaged Semiconductor Silicon Wafers during Backside Grinding (Number) The surface of each semiconductor silicon wafer (diameter: 8 inches, thickness: 600 μm, surface irregularity: about 10 μm) on which integrated circuits are formed is The adhesive film obtained in each of the examples and comparative examples was pasted, and using a grinder [manufactured by Disco Corporation: Back Grinder DFG-821F / 8], water having a predetermined water temperature was applied to cool the semiconductor silicon. The back surface of the wafer is ground until the thickness of the wafer becomes 200 μm. After finishing the grinding, the film is peeled off under a predetermined condition. 20 semiconductor silicon wafers were used for each Example and Comparative Example, grinding was performed 20 times, the number of wafers damaged during backside grinding (due to peeling of adhesive film during grinding), adhesive film and semiconductor wafer The number of wafers in which water has invaded and the number of wafers damaged during peeling are counted.
【0056】(2)顕微鏡による半導体ウエハへの汚染
性の観察(%) 上記(1)における半導体ウエハ裏面研削中、及び、粘
着フィルムの剥離時に破損しなかったウエハに対して、
ウエハ表面の集積回路を光学顕微鏡((株)ニコン製:
OPTIPHOT2)を用いて50〜1000倍の範囲
でウエハ表面全体及び回路の微細部分まで観察し、汚染
されているチップの割合を評価する。(2) Observation of Contamination on Semiconductor Wafer by Microscope (%) For the wafer which was not damaged during the back surface grinding of the semiconductor wafer in the above (1) and during peeling of the adhesive film,
The integrated circuit on the wafer surface is an optical microscope (manufactured by Nikon Corporation:
The entire surface of the wafer and the fine portion of the circuit are observed in a range of 50 to 1000 times using OPTIPHOT 2) to evaluate the ratio of contaminated chips.
【0057】(3)粘着力(g/25mm)特性 基本的な操作はJIS Z 0237に記載される方法
に準拠し、下記条件下で実施する。実施例及び比較例で
得られた粘着フィルムをその粘着剤層を介して、SUS
304−BA板(縦:20cm、横:5cm)の表面に
貼付し、23℃において30分間放置する。放置後、試
料の一端を挟持し、剥離角度:180度、剥離速度:3
00mm/min.で所定の温度においてSUS304
−BA板の表面から試料を剥離し、剥離する際の応力を
測定してg/25mmに換算する。(3) Adhesive strength (g / 25 mm) characteristics The basic operation is carried out under the following conditions according to the method described in JIS Z 0237. The pressure-sensitive adhesive films obtained in the examples and comparative examples were passed through the pressure-sensitive adhesive layer to obtain SUS.
It is attached to the surface of a 304-BA plate (length: 20 cm, width: 5 cm) and left at 23 ° C. for 30 minutes. After standing, one end of the sample is clamped, peeling angle: 180 degrees, peeling speed: 3
00 mm / min. At a predetermined temperature at SUS304
-The sample is peeled from the surface of the BA plate, and the stress at the time of peeling is measured and converted to g / 25 mm.
【0058】調製例1 <アクリル系粘着剤(以下、高分子1)の合成>アクリ
ル酸ブチル91重量部、アクリロニトリル4.5重量
部、アクリル酸4.5重量部をトルエン150重量部中
で、開始剤として2,2’−アゾビス−イソブチロニト
リル(以下、AIBNという)1重量部を用いて窒素雰
囲気下80℃において共重合して、高分子1の溶液(固
形分40重量%)を得た。Preparation Example 1 <Synthesis of Acrylic Adhesive (Polymer 1)> 91 parts by weight of butyl acrylate, 4.5 parts by weight of acrylonitrile, and 4.5 parts by weight of acrylic acid in 150 parts by weight of toluene, Using 1 part by weight of 2,2′-azobis-isobutyronitrile (hereinafter referred to as AIBN) as an initiator, copolymerization was carried out at 80 ° C. under a nitrogen atmosphere to give a solution of polymer 1 (solid content 40% by weight). Obtained.
【0059】調製例2 <側鎖結晶性高分子その1(以下、高分子2)の合成>
メタクリル酸ヘキサデシル98重量部、アクリル酸2重
量部をトルエン180重量部中でドデシルメルカプタン
5重量部の存在下で、開始剤としてAIBN1重量部を
用いて窒素雰囲気下80℃において共重合して、高分子
2の溶液(固形分36重量%)を得た。Preparation Example 2 <Synthesis of Side-Chain Crystalline Polymer Part 1 (Polymer 2)>
Hexadecyl methacrylate (98 parts by weight) and acrylic acid (2 parts by weight) were copolymerized with 180 parts by weight of toluene in the presence of 5 parts by weight of dodecyl mercaptan, and 1 part by weight of AIBN as an initiator at 80 ° C. under a nitrogen atmosphere to obtain a high polymer. A solution of molecule 2 (36 wt% solids) was obtained.
【0060】調製例3 <側鎖結晶性高分子その2(以下、高分子3)の合成>
アクリル酸オクタデシル98重量部、アクリル酸2重量
部をトルエン180重量部中でドデシルメルカプタン5
重量部の存在下で、開始剤としてAIBN1重量部を用
いて窒素雰囲気下80℃において共重合して、高分子3
の溶液(固形分36重量%)を得た。Preparation Example 3 <Synthesis of Side Chain Crystalline Polymer 2 (Polymer 3)>
98 parts by weight of octadecyl acrylate and 2 parts by weight of acrylic acid were mixed with 5 parts of dodecyl mercaptan in 180 parts by weight of toluene.
1 part by weight of AIBN as an initiator in the presence of 1 part by weight of the polymer 3 at 80 ° C. under a nitrogen atmosphere.
To obtain a solution (solid content 36% by weight).
【0061】調製例4 <側鎖結晶性高分子その3(以下、高分子4)の合成>
メタクリル酸ヘキサデシル98重量部、アクリル酸2重
量部を酢酸エチル180重量部中で、開始剤としてAI
BN0.2重量部を用いて窒素雰囲気下75℃において
共重合して、高分子4の溶液(固形分36重量%)を得
た。Preparation Example 4 <Synthesis of Side-chain Crystalline Polymer No. 3 (Polymer 4)>
Hexadecyl methacrylate 98 parts by weight and acrylic acid 2 parts by weight in 180 parts by weight of ethyl acetate as AI
Copolymerization was carried out using 75 parts by weight of BN at 75 ° C. under a nitrogen atmosphere to obtain a solution of polymer 4 (solid content: 36% by weight).
【0062】実施例1 調製例1で合成した高分子1の溶液(固形分40重量
%)75重量部、及び、調製例2で合成した高分子2の
溶液(固形分36重量%)25重量部を混合し、さら
に、イソシアネート系架橋剤(三井東圧化学(株)製、
オレスターP49−60SX、固形分60重量%)1重
量部を添加して粘着剤塗布液を得た。この粘着剤塗布液
をロールコーターを用いてポリプロピレンフィルム(剥
離フィルム、厚み:50μm)の片面に塗布し、120
℃で1分間乾燥して厚さ15μmの粘着剤層を設けた。
次いで、コロナ放電処理を施した厚さ120μmのエチ
レン−酢酸ビニル共重合体フィルム(ショアーD型硬
度:38)の該処理面を貼り合わせ押圧して、粘着剤層
を転写させることにより粘着フィルムを製造した。Example 1 75 parts by weight of a solution of polymer 1 synthesized in Preparation Example 1 (solid content 40% by weight) and 25 parts by weight of solution of polymer 2 synthesized in Preparation Example 2 (solid content 36% by weight) Parts, and further, an isocyanate cross-linking agent (manufactured by Mitsui Toatsu Chemicals, Inc.,
1 part by weight of Orestar P49-60SX, solid content 60% by weight) was added to obtain an adhesive coating solution. This adhesive coating solution was applied to one side of a polypropylene film (release film, thickness: 50 μm) by using a roll coater, and 120
The adhesive layer having a thickness of 15 μm was provided by drying at 1 ° C. for 1 minute.
Then, the treated surface of an ethylene-vinyl acetate copolymer film (Shore D hardness: 38) having a thickness of 120 μm subjected to corona discharge treatment is bonded and pressed to transfer the pressure-sensitive adhesive layer, whereby the pressure-sensitive adhesive layer is transferred. Manufactured.
【0063】室温が23℃に管理された環境下で、得ら
れた粘着フィルムの粘着剤層から剥離フィルムを剥離
し、粘着剤層表面を露出させ、その粘着剤層を介して、
集積回路が形成された半導体シリコンウエハ(径:8イ
ンチ、厚み600μm、表面の凹凸差:約10μm)の
表面に貼付し、研削機〔(株)ディスコ製:バックグラ
インダーDFG−821F/8〕を用いて,23℃の水
をかけて冷却しながら半導体シリコンウエハの裏面をウ
エハの厚みが200μmになるまで研削した。研削終了
後、該ウエハを該フィルムを貼着したまま5℃に冷却
し、この温度を保持したまま該フィルムを剥離した。2
0枚の半導体ウエハについて同様の操作を20回行っ
た。研削中に破損したウエハ、ウエハと粘着フィルムの
間に水の侵入があったウエハ、および、剥離時に破損し
たウエハは皆無であった。得られた粘着フィルムの実施
例1の使用条件下での粘着力特性および半導体ウエハ表
面への汚染性、並びに、研削結果を〔表1〕に示す。Under an environment in which the room temperature was controlled at 23 ° C., the release film was peeled off from the pressure-sensitive adhesive layer of the obtained pressure-sensitive adhesive film to expose the surface of the pressure-sensitive adhesive layer, and through the pressure-sensitive adhesive layer,
It is attached to the surface of a semiconductor silicon wafer (diameter: 8 inches, thickness: 600 μm, surface irregularity difference: about 10 μm) on which an integrated circuit is formed, and a grinding machine [manufactured by Disco Corporation: Back Grinder DFG-821F / 8] is used. The back surface of the semiconductor silicon wafer was ground while being cooled with water at 23 ° C. until the thickness of the wafer became 200 μm. After completion of grinding, the wafer was cooled to 5 ° C. with the film adhered, and the film was peeled off while maintaining this temperature. 2
The same operation was repeated 20 times for 0 semiconductor wafers. None of the wafers were damaged during grinding, water penetrated between the wafer and the adhesive film, or were damaged during peeling. [Table 1] shows the adhesive property of the obtained adhesive film under the use conditions of Example 1, the contamination property to the surface of the semiconductor wafer, and the grinding result.
【0064】実施例2 実施例1で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、冷却水の水温を30℃とした以
外は実施例1と同様の方法で、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の裏面をウエハ
の厚みが200μmになるまで研削した。研削終了後、
該ウエハを該フィルムを貼着したまま10℃に冷却し、
この温度を保持したまま該フィルムを剥離した。20枚
の半導体ウエハについて同様の操作を20回行った。研
削中に破損したウエハ、ウエハと粘着フィルムの間に水
の侵入があったウエハ、および、剥離時に破損したウエ
ハは皆無であった。実施例1の粘着フィルムの実施例2
の使用条件下での粘着力特性および半導体ウエハ表面へ
の汚染性、並びに、研削結果を〔表1〕に示す。Example 2 Using the pressure-sensitive adhesive film obtained in Example 1, the same procedure as in Example 1 was repeated except that the cooling water temperature was 30 ° C. in the same environment as in Example 1. The back surface of the semiconductor silicon wafer on which the circuit was formed (the same as in Example 1) was ground until the thickness of the wafer became 200 μm. After grinding,
Cooling the wafer to 10 ° C. with the film attached,
The film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. None of the wafers were damaged during grinding, water penetrated between the wafer and the adhesive film, or were damaged during peeling. Example 2 of the adhesive film of Example 1
[Table 1] shows the adhesive property, the contamination property to the surface of the semiconductor wafer, and the grinding result under the use condition of No.
【0065】実施例3 調製例1で合成した高分子1の溶液(固形分40重量
%)75重量部、及び、調製例3で合成した高分子3の
溶液(固形分36重量%)25重量部を混合し、さら
に、イソシアネート系架橋剤(三井東圧化学(株)製、
オレスターP49−60SX、固形分60重量%)2重
量部を添加して粘着剤塗布液を得た。この粘着剤塗布液
を用いて、実施例1と同様の方法で粘着フィルムを製造
した。Example 3 75 parts by weight of a solution of polymer 1 (solid content 40% by weight) synthesized in Preparation Example 1 and 25 parts by weight of solution of polymer 3 synthesized in Preparation Example 3 (36% by weight solid content) Parts, and further, an isocyanate cross-linking agent (manufactured by Mitsui Toatsu Chemicals, Inc.,
2 parts by weight of Orestar P49-60SX, solid content 60% by weight) was added to obtain an adhesive coating solution. Using this pressure-sensitive adhesive coating solution, a pressure-sensitive adhesive film was produced in the same manner as in Example 1.
【0066】得られた粘着フィルムを用い、実施例1と
同様の環境下において、実施例1と同様の方法で、集積
回路が形成された半導体シリコンウエハ(実施例1と同
じ)の裏面をウエハの厚みが200μmになるまで研削
した。研削終了後、該ウエハを該フィルムを貼着したま
ま65℃に加熱し、この温度を保持したまま該フィルム
を剥離した。20枚の半導体ウエハについて同様の操作
を20回行った。研削中に破損したウエハ、ウエハと粘
着フィルムの間に水の侵入があったウエハ、および、剥
離時に破損したウエハは皆無であった。得られた粘着フ
ィルムの実施例3の使用条件下での粘着力特性および半
導体ウエハ表面への汚染性、並びに、研削結果を〔表
1〕に示す。Using the obtained adhesive film, in the same environment as in Example 1, in the same manner as in Example 1, the back surface of the semiconductor silicon wafer (the same as in Example 1) on which an integrated circuit was formed was used. Was ground to a thickness of 200 μm. After completion of grinding, the wafer was heated to 65 ° C. with the film adhered, and the film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. None of the wafers were damaged during grinding, water penetrated between the wafer and the adhesive film, or were damaged during peeling. [Table 1] shows the adhesive property of the obtained adhesive film under the use conditions of Example 3, the contamination property on the surface of the semiconductor wafer, and the grinding result.
【0067】実施例4 実施例3で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、冷却水の水温を40℃とした以
外は実施例1と同様の方法で、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の裏面をウエハ
の厚みが200μmになるまで研削した。研削終了後、
該ウエハを該フィルムを貼着したまま55℃に加熱し、
この温度を保持したまま該フィルムを剥離した。20枚
の半導体ウエハについて同様の操作を20回行った。研
削中に破損したウエハ、ウエハと粘着フィルムの間に水
の侵入があったウエハ、および、剥離時に破損したウエ
ハは皆無であった。実施例3の粘着フィルムの実施例4
の使用条件下での粘着力特性および半導体ウエハ表面へ
の汚染性、並びに、研削結果を〔表1〕に示す。Example 4 Using the pressure-sensitive adhesive film obtained in Example 3, the same procedure as in Example 1 was repeated except that the temperature of the cooling water was 40 ° C. in the same environment as in Example 1. The back surface of the semiconductor silicon wafer on which the circuit was formed (the same as in Example 1) was ground until the thickness of the wafer became 200 μm. After grinding,
The wafer is heated to 55 ° C. with the film attached,
The film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. None of the wafers were damaged during grinding, water penetrated between the wafer and the adhesive film, or were damaged during peeling. Example 4 of the adhesive film of Example 3
[Table 1] shows the adhesive property, the contamination property to the surface of the semiconductor wafer, and the grinding result under the use condition of No.
【0068】実施例5 調製例1で合成した高分子1の溶液(固形分40重量
%)70重量部、及び、調製例4で合成した高分子4の
溶液(固形分36重量%)30重量部を混合し、さら
に、イソシアネート系架橋剤(三井東圧化学(株)製、
オレスターP49−60SX、固形分60重量%)1.
5重量部を添加して粘着剤塗布液を得た。この粘着剤塗
布液を用いて、実施例1と同様の方法で粘着フィルムを
製造した。Example 5 70 parts by weight of a solution of polymer 1 synthesized in Preparation Example 1 (solid content 40% by weight) and 30 parts by weight of solution of polymer 4 synthesized in Preparation Example 4 (solid content 36% by weight) Parts, and further, an isocyanate cross-linking agent (manufactured by Mitsui Toatsu Chemicals, Inc.,
Olester P49-60SX, solid content 60% by weight) 1.
5 parts by weight was added to obtain an adhesive coating solution. Using this pressure-sensitive adhesive coating solution, a pressure-sensitive adhesive film was produced in the same manner as in Example 1.
【0069】得られた粘着フィルムを用い、実施例1と
同様の環境下において、実施例1と同様の方法で、集積
回路が形成された半導体シリコンウエハ(実施例1と同
じ)の裏面を該ウエハの厚みが200μmになるまで研
削した。研削終了後、実施例1と同様の方法で該フィル
ムを剥離した。20枚の半導体ウエハについて同様の操
作を20回行った。研削中に破損したウエハ、ウエハと
粘着フィルムの間に水の侵入があったウエハ、および、
剥離時に破損したウエハは皆無であった。得られた粘着
フィルムの実施例5の使用条件下での粘着力特性および
半導体ウエハ表面への汚染性、並びに、研削結果を〔表
1〕に示す。Using the obtained adhesive film, in the same environment as in Example 1, in the same manner as in Example 1, the back surface of a semiconductor silicon wafer (the same as that in Example 1) on which an integrated circuit was formed was prepared. The wafer was ground to a thickness of 200 μm. After finishing the grinding, the film was peeled off in the same manner as in Example 1. The same operation was performed 20 times on 20 semiconductor wafers. Wafers damaged during grinding, wafers with water intrusion between the wafer and the adhesive film, and
None of the wafers were damaged during peeling. [Table 1] shows the adhesive property of the obtained adhesive film under the use condition of Example 5, the contamination property to the surface of the semiconductor wafer, and the grinding result.
【0070】実施例6 実施例5で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、冷却水の水温を40℃とした以
外は実施例1と同様の方法で、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の裏面をウエハ
の厚みが200μmになるまで研削した。研削終了後、
実施例2と同様の方法で該フィルムを剥離した。20枚
の半導体ウエハについて同様の操作を20回行った。研
削中に破損したウエハ、ウエハと粘着フィルムの間に水
の侵入があったウエハ、および、剥離時に破損したウエ
ハは皆無であった。実施例5の粘着フィルムの実施例6
の使用条件下での粘着力特性および半導体ウエハ表面へ
の汚染性、並びに、研削結果を〔表1〕に示す。Example 6 Using the pressure-sensitive adhesive film obtained in Example 5, the same procedure as in Example 1 was repeated except that the temperature of the cooling water was 40 ° C. in the same environment as in Example 1. The back surface of the semiconductor silicon wafer on which the circuit was formed (the same as in Example 1) was ground until the thickness of the wafer became 200 μm. After grinding,
The film was peeled off in the same manner as in Example 2. The same operation was performed 20 times on 20 semiconductor wafers. None of the wafers were damaged during grinding, water penetrated between the wafer and the adhesive film, or were damaged during peeling. Example 6 of the adhesive film of Example 5
[Table 1] shows the adhesive property, the contamination property to the surface of the semiconductor wafer, and the grinding result under the use condition of No.
【0071】[0071]
【表1】 [Table 1]
【0072】比較例1 実施例1で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、実施例1と同様の方法で、集積
回路が形成された半導体シリコンウエハ(実施例1と同
じ)の裏面をウエハの厚みが200μmになるまで研削
した。研削終了後、冷却せずにそのまま該フィルムを剥
離した。20枚の半導体ウエハについて同様の操作を2
0回行った。研削中に破損したウエハおよびウエハと粘
着フィルムの間に水の侵入があったウエハは皆無であっ
たが、剥離時に11枚のウエハが破損した。実施例1の
粘着フィルムの比較例1の使用条件下での粘着力特性お
よび半導体ウエハ表面への汚染性、並びに、研削結果を
〔表2〕に示す。Comparative Example 1 Using the pressure-sensitive adhesive film obtained in Example 1, in the same environment as in Example 1 and in the same manner as in Example 1, a semiconductor silicon wafer (Example (The same as No. 1) was ground until the thickness of the wafer became 200 μm. After finishing the grinding, the film was peeled off without cooling. Perform the same operation for 20 semiconductor wafers in 2
Performed 0 times. There were no wafers that were damaged during grinding and no water penetrated between the wafer and the adhesive film, but 11 wafers were damaged during peeling. Table 2 shows the adhesive property of the pressure-sensitive adhesive film of Example 1 under the use conditions of Comparative Example 1, the stain resistance to the surface of the semiconductor wafer, and the grinding result.
【0073】比較例2 実施例3で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、実施例1と同様の方法で、集積
回路が形成された半導体シリコンウエハ(実施例1と同
じ)の裏面をウエハの厚みが200μmになるまで研削
した。研削終了後、加熱せずにそのまま該フィルムを剥
離した。20枚の半導体ウエハについて同様の操作を2
0回行った。研削中に破損したウエハおよびウエハと粘
着フィルムの間に水の侵入があったウエハは皆無であっ
たが、剥離時に4枚のウエハが破損した。実施例3の粘
着フィルムの比較例2の使用条件下での粘着力特性およ
び半導体ウエハ表面への汚染性、並びに、の研削結果を
〔表2〕に示す。Comparative Example 2 Using the pressure-sensitive adhesive film obtained in Example 3, in the same environment as in Example 1 and in the same method as in Example 1, a semiconductor silicon wafer (Example (The same as No. 1) was ground until the thickness of the wafer became 200 μm. After finishing the grinding, the film was peeled off without heating. Perform the same operation for 20 semiconductor wafers in 2
Performed 0 times. None of the wafers were damaged during grinding and water was invaded between the wafer and the adhesive film, but four wafers were damaged during peeling. Table 2 shows the adhesive property of the pressure-sensitive adhesive film of Example 3 under the use conditions of Comparative Example 2, the stain resistance to the surface of the semiconductor wafer, and the grinding result.
【0074】比較例3 実施例5で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、実施例1と同様の方法で、集積
回路が形成された半導体シリコンウエハ(実施例1と同
じ)の裏面をウエハの厚みが200μmになるまで研削
した。研削終了後、冷却せずにそのまま該フィルムを剥
離した。20枚の半導体ウエハについて同様の操作を2
0回行った。研削中に破損したウエハおよびウエハと粘
着フィルムの間に水の侵入があったウエハは皆無であっ
たが、剥離時に10枚のウエハが破損した。実施例5の
粘着フィルムの比較例3の使用条件下での粘着力特性お
よび半導体ウエハ表面への汚染性、並びに、研削結果を
〔表2〕に示す。Comparative Example 3 Using the pressure-sensitive adhesive film obtained in Example 5, in the same environment as in Example 1 and in the same manner as in Example 1, a semiconductor silicon wafer (Example (The same as No. 1) was ground until the thickness of the wafer became 200 μm. After finishing the grinding, the film was peeled off without cooling. Perform the same operation for 20 semiconductor wafers in 2
Performed 0 times. None of the wafers were damaged during grinding and water entered between the wafer and the adhesive film, but 10 wafers were damaged during peeling. Table 2 shows the adhesive property of the pressure-sensitive adhesive film of Example 5 under the use conditions of Comparative Example 3, contamination on the surface of the semiconductor wafer, and grinding result.
【0075】比較例4 5℃の環境下において、実施例1で得られた粘着フィル
ムを、その粘着剤層を介して、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の表面に貼付し
たところ、粘着力がほとんどなく貼付できなかった。結
果を〔表2〕に示す。Comparative Example 4 Under the environment of 5 ° C., the surface of a semiconductor silicon wafer (the same as that of Example 1) on which the integrated circuit was formed by using the adhesive film obtained in Example 1 through the adhesive layer When it was attached to, it could not be attached because it had almost no adhesive force. The results are shown in [Table 2].
【0076】比較例5 実施例3で得られた粘着フィルムを65℃に加熱し、そ
のままの温度で、その粘着剤層を介して、集積回路が形
成された半導体シリコンウエハ(実施例1と同じ)の表
面に貼付したところ、すぐに半導体ウエハ周辺からフィ
ルムが浮き上がりが始め、ウエハの裏面研削が不可能な
状態となった。結果を〔表2〕に示す。Comparative Example 5 The pressure-sensitive adhesive film obtained in Example 3 was heated to 65 ° C., and at the same temperature, a semiconductor silicon wafer on which an integrated circuit was formed via the pressure-sensitive adhesive layer (same as Example 1). The film immediately began to float around the semiconductor wafer, and it became impossible to grind the back surface of the wafer. The results are shown in [Table 2].
【0077】比較例6 5℃の環境下において、実施例5で得られた粘着フィル
ムを、その粘着剤層を介して、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の表面に貼付し
たところ、粘着力がほとんどなく貼付できなかった。結
果を〔表2〕に示す。Comparative Example 6 Under the environment of 5 ° C., the surface of a semiconductor silicon wafer (the same as that of Example 1) on which the integrated circuit was formed by using the adhesive film obtained in Example 5 through the adhesive layer When it was attached to, it could not be attached because it had almost no adhesive force. The results are shown in [Table 2].
【0078】比較例7 実施例1で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、冷却水の水温を10℃とした以
外は実施例1と同様の方法で、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の裏面をウエハ
の厚みが200μmになるまで研削した。研削終了後、
該ウエハを該フィルムを貼着したまま10℃に維持し、
この温度を保持したまま該フィルムを剥離した。20枚
の半導体ウエハについて同様の操作を20回行った。研
削中に10枚のウエハが破損し、破損のなかった残りの
全てのウエハ(10枚)にウエハと粘着フィルムの間に
水の侵入が認められた。この水侵入の認められたウエハ
から該テープを剥離した時のウエハの破損は皆無であっ
た。実施例1の粘着フィルムの比較例7の使用条件下で
の粘着力特性および半導体ウエハ表面への汚染性、並び
に、研削結果を〔表2〕に示す。Comparative Example 7 Using the pressure-sensitive adhesive film obtained in Example 1, the same procedure as in Example 1 was repeated except that the temperature of the cooling water was changed to 10 ° C. under the same environment as in Example 1. The back surface of the semiconductor silicon wafer on which the circuit was formed (the same as in Example 1) was ground until the thickness of the wafer became 200 μm. After grinding,
Maintaining the wafer at 10 ° C. with the film attached,
The film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. During the grinding, 10 wafers were damaged, and water was found to have entered between the wafer and the adhesive film in all of the remaining undamaged wafers (10 wafers). There was no damage to the wafer when the tape was peeled off from the wafer in which water was observed. Table 2 shows the adhesive property of the pressure-sensitive adhesive film of Example 1 under the use conditions of Comparative Example 7, the stain resistance to the surface of the semiconductor wafer, and the grinding result.
【0079】比較例8 実施例3で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、冷却水の水温を55℃とした以
外は実施例1と同様の方法で、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の裏面をウエハ
の厚みが200μmになるまで研削した。研削終了後、
該ウエハを該フィルムを貼着したまま55℃に維持し、
この温度を保持したまま該フィルムを剥離した。20枚
の半導体ウエハについて同様の操作を20回行った。研
削中に11枚のウエハが破損し、破損のなかった残りの
全てのウエハ(9枚)にウエハと粘着フィルムの間に水
の侵入が認められた。この水侵入の認められたウエハか
ら該テープを剥離した時のウエハの破損は皆無であっ
た。実施例3の粘着フィルムの比較例8の使用条件下で
の粘着力特性および半導体ウエハ表面への汚染性、並び
に、研削結果を〔表2〕に示す。Comparative Example 8 Using the pressure-sensitive adhesive film obtained in Example 3, the same procedure as in Example 1 was repeated except that the temperature of the cooling water was set to 55 ° C. in the same environment as in Example 1. The back surface of the semiconductor silicon wafer on which the circuit was formed (the same as in Example 1) was ground until the thickness of the wafer became 200 μm. After grinding,
Maintaining the wafer at 55 ° C. with the film attached,
The film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. Eleven wafers were damaged during the grinding, and water was found to have entered between the wafer and the adhesive film in all the remaining undamaged wafers (9 wafers). There was no damage to the wafer when the tape was peeled off from the wafer in which water was observed. Table 2 shows the adhesive property of the pressure-sensitive adhesive film of Example 3 under the use conditions of Comparative Example 8, contamination on the surface of the semiconductor wafer, and grinding result.
【0080】比較例9 実施例5で得られた粘着フィルムを用いて、実施例1と
同様の環境下において、冷却水の水温を10℃とした以
外は実施例1と同様の方法で、集積回路が形成された半
導体シリコンウエハ(実施例1と同じ)の裏面をウエハ
の厚みが200μmになるまで研削した。研削終了後、
該ウエハを該フィルムを貼着したまま10℃に維持し、
この温度を保持したまま該フィルムを剥離した。20枚
の半導体ウエハについて同様の操作を20回行った。研
削中に10枚のウエハが破損し、破損のなかった残りの
全てのウエハ(10枚)にウエハと粘着フィルムの間に
水の侵入が認められた。この水侵入の認められたウエハ
から該テープを剥離した時のウエハの破損は皆無であっ
た。実施例5の粘着フィルムの比較例9の使用条件下で
の粘着力特性および半導体ウエハ表面への汚染性、並び
に、研削結果を〔表2〕に示す。Comparative Example 9 Using the adhesive film obtained in Example 5, the same procedure as in Example 1 was repeated except that the temperature of the cooling water was changed to 10 ° C. under the same environment as in Example 1. The back surface of the semiconductor silicon wafer on which the circuit was formed (the same as in Example 1) was ground until the thickness of the wafer became 200 μm. After grinding,
Maintaining the wafer at 10 ° C. with the film attached,
The film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. During the grinding, 10 wafers were damaged, and water was found to have entered between the wafer and the adhesive film in all of the remaining undamaged wafers (10 wafers). There was no damage to the wafer when the tape was peeled off from the wafer in which water was observed. Table 2 shows the adhesive property of the adhesive film of Example 5 under the use conditions of Comparative Example 9, the stain resistance to the surface of the semiconductor wafer, and the grinding result.
【0081】[0081]
【表2】 [Table 2]
【0082】比較例10 調製例1で合成した高分子1の溶液(固形分40重量
%)100重量部にイソシアネート系架橋剤(三井東圧
化学(株)製、オレスターP49−60SX、固形分6
0%)1.2重量部を添加して粘着剤塗布液を得た。こ
の粘着剤塗布液をロールコーターを用いてポリプロピレ
ンフィルム(剥離フィルム、厚み:50μm)に塗布
し、120℃で1分間乾燥して厚さ15μmの粘着剤層
を設けた。次いで、コロナ放電処理を施した厚さ120
μmのエチレン−酢酸ビニル共重合体フィルム(ショア
ーD型硬度:38)の該処理面を貼り合わせ押圧して、
粘着剤層を転写させることにより粘着フィルムを製造し
た。Comparative Example 10 100 parts by weight of the solution of polymer 1 synthesized in Preparation Example 1 (solid content 40% by weight) was added to an isocyanate crosslinking agent (Mitsui Toatsu Chemical Co., Ltd., Orestar P49-60SX, solid content). 6
0%) 1.2 parts by weight was added to obtain an adhesive coating solution. This adhesive coating liquid was applied to a polypropylene film (release film, thickness: 50 μm) using a roll coater, and dried at 120 ° C. for 1 minute to form an adhesive layer having a thickness of 15 μm. Next, a thickness 120 that has been subjected to corona discharge treatment
The treated surface of a μm ethylene-vinyl acetate copolymer film (Shore D type hardness: 38) was stuck and pressed,
An adhesive film was produced by transferring the adhesive layer.
【0083】実施例1と同様の環境下において、実施例
1と同様の方法で、集積回路が形成された半導体シリコ
ンウエハ(実施例1と同じ)の裏面をウエハの厚みが2
00μmになるまで研削した。研削終了後、該ウエハを
該フィルムを貼着したまま5℃に冷却し、この温度を保
持したまま該フィルムを剥離した。20枚の半導体ウエ
ハについて同様の操作を20回行った。研削中に破損し
たウエハおよびウエハと粘着フィルムの間に水の侵入が
あったウエハは皆無であったが、剥離時に13枚のウエ
ハが破損した。得られた粘着フィルムの比較例10の使
用条件下での粘着力特性および半導体ウエハ表面への汚
染性、並びに、研削結果を〔表3〕に示す。Under the same environment as that of the first embodiment, the back surface of the semiconductor silicon wafer (the same as that of the first embodiment) on which the integrated circuit is formed has the thickness of 2 by the same method as that of the first embodiment.
Grinding was performed until it became 00 μm. After completion of grinding, the wafer was cooled to 5 ° C. with the film adhered, and the film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. None of the wafers were damaged during grinding and water entered between the wafer and the adhesive film, but 13 wafers were damaged during peeling. Table 3 shows the adhesive property of the obtained adhesive film under the use conditions of Comparative Example 10, the stain resistance to the surface of the semiconductor wafer, and the grinding result.
【0084】比較例11 比較例10で得られた粘着フィルムを用いて、実施例1
と同様の環境下において、実施例1と同様の方法で、集
積回路が形成された半導体シリコンウエハ(実施例1と
同じ)の裏面をウエハの厚みが200μmになるまで研
削した。研削終了後、該ウエハを該フィルムを貼着した
まま65℃に加熱し、この温度を保持したまま該フィル
ムを剥離した。20枚の半導体ウエハについて同様の操
作を20回行った。研削中に破損したウエハおよびウエ
ハと粘着フィルムの間に水の侵入があったウエハは皆無
であったが、剥離時に4枚のウエハが破損した。得られ
た粘着フィルムの比較例11の使用条件下での粘着力特
性および半導体ウエハへの汚染性、並びに、研削結果を
〔表3〕に示す。Comparative Example 11 Using the pressure-sensitive adhesive film obtained in Comparative Example 10, Example 1
In the same environment as described above, the back surface of the semiconductor silicon wafer on which the integrated circuit was formed (the same as in Example 1) was ground by the same method as in Example 1 until the wafer had a thickness of 200 μm. After completion of grinding, the wafer was heated to 65 ° C. with the film adhered, and the film was peeled off while maintaining this temperature. The same operation was performed 20 times on 20 semiconductor wafers. None of the wafers were damaged during grinding and water was invaded between the wafer and the adhesive film, but four wafers were damaged during peeling. [Table 3] shows the adhesive property of the obtained adhesive film under the use conditions of Comparative Example 11, the stain resistance to the semiconductor wafer, and the grinding result.
【0085】比較例12 比較例10で得られた粘着フィルムを用いて、実施例1
と同様の環境下において、実施例1と同様の方法で、集
積回路が形成された半導体シリコンウエハ(実施例1と
同じ)の裏面をウエハの厚みが200μmになるまで研
削した。研削終了後、室温で該フィルムを剥離した。2
0枚の半導体ウエハについて上記の操作を20回行っ
た。研削中に破損したウエハおよびウエハと粘着フィル
ムの間に水の侵入があったウエハは皆無であったが、剥
離時に10枚のウエハが破損した。得られた粘着フィル
ムの比較例12の使用条件下における粘着力特性および
半導体ウエハへの汚染性、並びに、研削結果を〔表3〕
に示す。Comparative Example 12 Using the pressure-sensitive adhesive film obtained in Comparative Example 10, Example 1
In the same environment as described above, the back surface of the semiconductor silicon wafer on which the integrated circuit was formed (the same as in Example 1) was ground by the same method as in Example 1 until the wafer had a thickness of 200 μm. After finishing the grinding, the film was peeled off at room temperature. 2
The above operation was repeated 20 times for 0 semiconductor wafers. None of the wafers were damaged during grinding and water entered between the wafer and the adhesive film, but 10 wafers were damaged during peeling. The adhesive property of the obtained adhesive film under the use conditions of Comparative Example 12 and the contamination property to the semiconductor wafer, and the grinding result are shown in [Table 3].
Shown in
【0086】比較例13 調製例1で合成した高分子1の溶液(固形分40重量
%)100重量部にイソシアネート系架橋剤(三井東圧
化学(株)製、オレスターP49−60SX、固形分6
0%)6.5重量部を添加して粘着剤塗布液を得た。こ
の粘着剤塗布液をロールコーターを用いてポリプロピレ
ンフィルム(剥離フィルム、厚み:50μm)に塗布
し、120℃で1分間乾燥して厚さ15μmの粘着剤層
を設けた。次いで、コロナ放電処理を施した厚さ120
μmのエチレン−酢酸ビニル共重合体フィルム(ショア
ーD型硬度:38)の該処理面を貼り合わせ押圧して、
粘着剤層を転写させることにより粘着フィルムを製造し
た。Comparative Example 13 100 parts by weight of the solution of Polymer 1 synthesized in Preparation Example 1 (solid content: 40% by weight) was added to an isocyanate crosslinking agent (manufactured by Mitsui Toatsu Chemicals, Inc., Orestar P49-60SX, solid content). 6
0%) 6.5 parts by weight was added to obtain an adhesive coating solution. This adhesive coating liquid was applied to a polypropylene film (release film, thickness: 50 μm) using a roll coater, and dried at 120 ° C. for 1 minute to form an adhesive layer having a thickness of 15 μm. Next, a thickness 120 that has been subjected to corona discharge treatment
The treated surface of a μm ethylene-vinyl acetate copolymer film (Shore D type hardness: 38) was stuck and pressed,
An adhesive film was produced by transferring the adhesive layer.
【0087】実施例1と同様の環境下において、実施例
1と同様の方法で、集積回路が形成された半導体シリコ
ンウエハ(実施例1と同じ)の裏面をウエハの厚みが2
00μmになるまで研削した。研削終了後、室温で該フ
ィルムを剥離した。20枚の半導体ウエハについて、同
様の操作を20回行った。研削中に3枚のウエハが破損
し、破損のなかった残りの全てのウエハ(17枚)にウ
エハと粘着フィルムの間に水の侵入が認められた。この
水侵入の認められたウエハから該テープを剥離した時の
ウエハの破損は皆無であった。得られた粘着フィルムの
比較例13の使用条件下における粘着力特性および半導
体ウエハ表面への汚染性、並びに、研削結果を〔表3〕
に示す。Under the environment similar to that of the first embodiment, the back surface of the semiconductor silicon wafer (the same as that of the first embodiment) on which the integrated circuit is formed has the thickness of 2 by the same method as that of the first embodiment.
Grinding was performed until it became 00 μm. After finishing the grinding, the film was peeled off at room temperature. The same operation was performed 20 times on 20 semiconductor wafers. Three wafers were damaged during the grinding, and water was found to have entered between the wafer and the adhesive film in all the remaining undamaged wafers (17 wafers). There was no damage to the wafer when the tape was peeled off from the wafer in which water was observed. The adhesive property of the obtained adhesive film under the use conditions of Comparative Example 13 and the contamination property on the surface of the semiconductor wafer, and the grinding result are shown in [Table 3].
Shown in
【0088】比較例14 調製例1で合成した高分子1の溶液(固形分40重量
%)100重量部にイソシアネート系架橋剤(三井東圧
化学(株)製、オレスターP49−60SX、固形分6
0%)2重量部、ジペンタエリスリトールモノヒドロキ
シペンタアクリレート6重量部およびα−ヒドロキシシ
クロヘキシルフェニルケトン0.4重量部を添加して粘
着剤塗布液を得た。この粘着剤塗布液をロールコーター
を用いてポリプロピレンフィルム(剥離フィルム、厚
み:50μm)に塗布し、120℃で1分間乾燥して厚
さ15μmの粘着剤層を設けた。次いで、コロナ放電処
理を施した厚さ120μmのエチレン−酢酸ビニル共重
合体フィルム(ショアーD型硬度:38)の該処理面を
貼り合わせ押圧して、粘着剤層を転写させることにより
粘着フィルムを製造した。Comparative Example 14 100 parts by weight of the solution of Polymer 1 synthesized in Preparation Example 1 (solid content: 40% by weight) was added to an isocyanate cross-linking agent (Mitsui Toatsu Chemical Co., Ltd., Orestar P49-60SX, solid content). 6
0%) 2 parts by weight, 6 parts by weight of dipentaerythritol monohydroxypentaacrylate and 0.4 parts by weight of α-hydroxycyclohexyl phenyl ketone were added to obtain an adhesive coating solution. This adhesive coating liquid was applied to a polypropylene film (release film, thickness: 50 μm) using a roll coater, and dried at 120 ° C. for 1 minute to form an adhesive layer having a thickness of 15 μm. Then, the treated surface of an ethylene-vinyl acetate copolymer film (Shore D hardness: 38) having a thickness of 120 μm subjected to corona discharge treatment is bonded and pressed to transfer the pressure-sensitive adhesive layer, whereby the pressure-sensitive adhesive layer is transferred. Manufactured.
【0089】実施例1と同様の環境下において、実施例
1と同様の方法で、集積回路が形成された半導体シリコ
ンウエハ(実施例1と同じ)の裏面をウエハの厚みが2
00μmになるまで研削した。研削終了後、粘着フィル
ムのエチレン−酢酸ビニル共重合体フィルム側から高圧
水銀ランプ(40W/cm)で15cmの距離から20
秒間光照射した後、室温で該フィルムを剥離した。20
枚の半導体ウエハについて同様の操作を20回行った。
研削中に破損したウエハ、ウエハと粘着フィルムの間に
水の侵入があったウエハ、および、剥離時に破損したウ
エハは皆無であった。しかし、顕微鏡による観察で、一
部の回路のアルミ電極上に粘着剤に起因する汚染物が観
察された。得られた粘着フィルムの比較例14の使用条
件下における粘着力特性および半導体ウエハ表面への汚
染性、並びに、研削結果を〔表1〕に示す。Under the same environment as that of the first embodiment, the back surface of the semiconductor silicon wafer (the same as that of the first embodiment) on which the integrated circuit is formed has the thickness of 2 by the same method as that of the first embodiment.
Grinding was performed until it became 00 μm. After finishing the grinding, from the ethylene-vinyl acetate copolymer film side of the adhesive film, with a high pressure mercury lamp (40 W / cm), from a distance of 15 cm to 20
After irradiating with light for a second, the film was peeled off at room temperature. 20
The same operation was repeated 20 times for each semiconductor wafer.
None of the wafers were damaged during grinding, water penetrated between the wafer and the adhesive film, or were damaged during peeling. However, under the microscope, contaminants due to the adhesive were observed on the aluminum electrodes of some circuits. Table 1 shows the adhesive property of the obtained adhesive film under the use conditions of Comparative Example 14, the stain resistance to the surface of the semiconductor wafer, and the grinding result.
【0090】[0090]
【表3】 [Table 3]
【0091】[0091]
【発明の効果】本発明の半導体ウエハ裏面研削用粘着フ
ィルムは、結晶性高分子を含む粘着剤層が形成されてお
り、半導体ウエハの裏面を研削する際には強い粘着力で
半導体ウエハを保護し、剥離するの際には冷却または加
熱する等の簡単な操作で容易に粘着力が低下する。その
ため、研削操作中には、半導体ウエハと粘着フィルムの
間に冷却水が侵入することがない上、半導体ウエハが破
損することがない。また、剥離応力が小さいので剥離す
る際に半導体ウエハが破損することがない。さらに、剥
離した後に粘着剤層からの汚染物が半導体ウエハ表面に
付着することが殆どない。従って、半導体ウエハの大口
径化、薄層化およびICの高性能化にある当技術分野に
おいて優れた効果を発揮するものである。The pressure-sensitive adhesive film for backside grinding of a semiconductor wafer according to the present invention has a pressure-sensitive adhesive layer containing a crystalline polymer formed therein, and protects the semiconductor wafer with a strong adhesive force when grinding the backside of the semiconductor wafer. However, when peeling, the adhesive force is easily reduced by a simple operation such as cooling or heating. Therefore, during the grinding operation, cooling water does not enter between the semiconductor wafer and the adhesive film, and the semiconductor wafer is not damaged. Further, since the peeling stress is small, the semiconductor wafer does not break when peeling. Further, contaminants from the pressure-sensitive adhesive layer hardly adhere to the semiconductor wafer surface after peeling. Therefore, the present invention exerts excellent effects in the technical field of increasing the diameter and thickness of a semiconductor wafer and improving the performance of an IC.
Claims (4)
れた半導体ウエハ裏面研削用粘着フィルムであって、該
粘着剤層が結晶性高分子を含む粘着剤により形成され、
該半導体ウエハ裏面研削用粘着フィルムの粘着力が、−
10℃以上の温度における少なくとも一部の温度範囲A
〜B℃(A<B)においてのみ150〜2,000g/
25mmであり、且つ、A℃未満の温度領域において1
50g/25mm未満であることを特徴とする半導体ウ
エハ裏面研削用粘着フィルム。1. A pressure-sensitive adhesive film for grinding a back surface of a semiconductor wafer, wherein a pressure-sensitive adhesive layer is provided on one surface of a base film, the pressure-sensitive adhesive layer being formed of a pressure-sensitive adhesive containing a crystalline polymer.
The adhesive force of the adhesive film for grinding the back surface of the semiconductor wafer is −
At least a partial temperature range A at a temperature of 10 ° C. or higher
Only at ~ B ° C (A <B) 150-2,000 g /
25 mm and 1 in the temperature range below A ° C
An adhesive film for grinding a back surface of a semiconductor wafer, which is less than 50 g / 25 mm.
れた半導体ウエハ裏面研削用粘着フィルムであって、該
粘着剤層が結晶性高分子を含む粘着剤により形成され、
該半導体ウエハ裏面研削用粘着フィルムの粘着力が、7
0℃以下の温度における少なくとも一部の温度範囲E〜
F℃(E<F)においてのみ150〜2,000g/2
5mmであり、且つ、F℃を超える温度領域において1
50g/25mm未満であることを特徴とする半導体ウ
エハ裏面研削用粘着フィルム。2. A pressure-sensitive adhesive film for grinding a back surface of a semiconductor wafer, wherein a pressure-sensitive adhesive layer is provided on one surface of a base film, the pressure-sensitive adhesive layer being formed of a pressure-sensitive adhesive containing a crystalline polymer.
The adhesive strength of the adhesive film for grinding the back surface of the semiconductor wafer is 7
At least a part of the temperature range E to 0 ° C. or lower
150 to 2,000 g / 2 only at F ° C (E <F)
1 in the temperature range of 5 mm and above F ° C.
An adhesive film for grinding a back surface of a semiconductor wafer, which is less than 50 g / 25 mm.
貼着し、研削終了後に剥離する半導体ウエハ裏面研削用
粘着フィルムの使用方法であって、該半導体ウエハ裏面
研削用粘着フィルムが、基材フィルムの片面に結晶性高
分子を含む粘着剤により形成された粘着剤層を有し、そ
の粘着力が−10℃以上の温度における少なくとも一部
の温度範囲A〜B℃(A<B)においてのみ150〜
2,000g/25mmであり、且つ、A℃未満の温度
領域において150g/25mm未満であり、A〜B℃
の温度範囲に含まれる少なくとも一部の温度範囲C〜D
℃(A<C≦D<B、1≦C≦D≦60)においてウエ
ハ表面に該粘着フィルムを貼着し、C〜D℃の温度範囲
の冷却水をかけながら半導体ウエハの裏面を研削し、次
いで、A℃未満に冷却した状態で該粘着フィルムを剥離
することを特徴とする半導体ウエハ裏面研削用粘着フィ
ルムの使用方法。3. A method of using a pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, which is adhered to the front surface of the backside of a semiconductor wafer when the backside is ground, and is peeled off after the grinding is completed. Has a pressure-sensitive adhesive layer formed of a pressure-sensitive adhesive containing a crystalline polymer on one surface thereof, and the pressure-sensitive adhesive force is at least in a partial temperature range A to B ° C (A <B) at a temperature of -10 ° C or higher. 150 ~
2,000 g / 25 mm and less than 150 g / 25 mm in the temperature range below A ° C., A to B ° C.
At least part of the temperature range C to D included in the temperature range
The adhesive film is attached to the wafer surface at a temperature of C (A <C ≦ D <B, 1 ≦ C ≦ D ≦ 60), and the back surface of the semiconductor wafer is ground while applying cooling water in a temperature range of C to D ° C. Then, a method of using the adhesive film for grinding a back surface of a semiconductor wafer, which comprises peeling the adhesive film in a state of being cooled to less than A ° C.
貼着し、研削終了後に剥離する半導体ウエハ裏面研削用
粘着フィルムの使用方法であって、該半導体ウエハ裏面
研削用粘着フィルムが、基材フィルムの片面に結晶性高
分子を含む粘着剤により形成された粘着剤層を有し、そ
の粘着力が70℃以下の温度における少なくとも一部の
温度範囲E〜F℃(E<F)においてのみ150〜2,
000g/25mmであり、且つ、F℃を超える温度領
域において150g/25mm未満であり、E〜F℃の
温度範囲に含まれる少なくとも一部の温度範囲G〜H℃
(E<G≦H<F、1≦G)においてウエハ表面に該粘
着フィルムを貼着し、G〜H℃の温度範囲の冷却水をか
けながら半導体ウエハの裏面を研削し、次いで、F℃を
超える温度に加熱した状態で該粘着フィルムを剥離する
ことを特徴とする半導体ウエハ裏面研削用粘着フィルム
の使用方法。4. A method of using a pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, which is adhered to the front surface of the backside of a semiconductor wafer when the backside is ground, and is peeled off after the grinding is completed. Has an adhesive layer formed of an adhesive containing a crystalline polymer on one surface thereof, and the adhesive force is 150 only in at least a partial temperature range E to F ° C (E <F) at a temperature of 70 ° C or less. ~ 2
000 g / 25 mm and less than 150 g / 25 mm in the temperature range exceeding F ° C, and at least a part of the temperature range G to H ° C included in the temperature range from E to F ° C.
In (E <G ≦ H <F, 1 ≦ G), the adhesive film is adhered to the wafer surface, the back surface of the semiconductor wafer is ground while cooling water in the temperature range of G to H ° C. is applied, and then F ° C. A method of using the pressure-sensitive adhesive film for backside grinding of a semiconductor wafer, which comprises peeling the pressure-sensitive adhesive film in a state of being heated to a temperature above 100 ° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30272695A JP3601892B2 (en) | 1995-11-21 | 1995-11-21 | Adhesive film for backside grinding of semiconductor wafer and method of using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30272695A JP3601892B2 (en) | 1995-11-21 | 1995-11-21 | Adhesive film for backside grinding of semiconductor wafer and method of using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09148279A true JPH09148279A (en) | 1997-06-06 |
JP3601892B2 JP3601892B2 (en) | 2004-12-15 |
Family
ID=17912428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30272695A Expired - Lifetime JP3601892B2 (en) | 1995-11-21 | 1995-11-21 | Adhesive film for backside grinding of semiconductor wafer and method of using the same |
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JP (1) | JP3601892B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002361617A (en) * | 2001-06-08 | 2002-12-18 | Nitto Denko Corp | Method for producing ceramic green sheet, method for producing laminated ceramic electronic part, and carrier sheet for ceramic green sheet |
JP2010121090A (en) * | 2008-11-21 | 2010-06-03 | Nitta Ind Corp | Temperature-sensitive pressure-sensitive adhesive tape and method for manufacturing chip-type electronic component using the same |
JP2014107339A (en) * | 2012-11-26 | 2014-06-09 | Disco Abrasive Syst Ltd | Wafer processing method |
JP2014165400A (en) * | 2013-02-26 | 2014-09-08 | Tokyo Ohka Kogyo Co Ltd | Substrate processing method |
JP2015176945A (en) * | 2014-03-14 | 2015-10-05 | 日本碍子株式会社 | Polished substrate manufacturing method |
WO2019044605A1 (en) * | 2017-09-04 | 2019-03-07 | ニッタ株式会社 | Thermosensitive pressure-sensitive adhesive, thermosensitive pressure-sensitive adhesive sheet, and thermosensitive pressure-sensitive adhesive tape |
-
1995
- 1995-11-21 JP JP30272695A patent/JP3601892B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002361617A (en) * | 2001-06-08 | 2002-12-18 | Nitto Denko Corp | Method for producing ceramic green sheet, method for producing laminated ceramic electronic part, and carrier sheet for ceramic green sheet |
JP2010121090A (en) * | 2008-11-21 | 2010-06-03 | Nitta Ind Corp | Temperature-sensitive pressure-sensitive adhesive tape and method for manufacturing chip-type electronic component using the same |
JP2014107339A (en) * | 2012-11-26 | 2014-06-09 | Disco Abrasive Syst Ltd | Wafer processing method |
JP2014165400A (en) * | 2013-02-26 | 2014-09-08 | Tokyo Ohka Kogyo Co Ltd | Substrate processing method |
JP2015176945A (en) * | 2014-03-14 | 2015-10-05 | 日本碍子株式会社 | Polished substrate manufacturing method |
WO2019044605A1 (en) * | 2017-09-04 | 2019-03-07 | ニッタ株式会社 | Thermosensitive pressure-sensitive adhesive, thermosensitive pressure-sensitive adhesive sheet, and thermosensitive pressure-sensitive adhesive tape |
JP2019044089A (en) * | 2017-09-04 | 2019-03-22 | ニッタ株式会社 | Temperature-sensitive adhesive, temperature-sensitive adhesive sheet and temperature-sensitive adhesive tape |
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