JPH09143688A - Crucible for vacuum deposition - Google Patents
Crucible for vacuum depositionInfo
- Publication number
- JPH09143688A JPH09143688A JP30938795A JP30938795A JPH09143688A JP H09143688 A JPH09143688 A JP H09143688A JP 30938795 A JP30938795 A JP 30938795A JP 30938795 A JP30938795 A JP 30938795A JP H09143688 A JPH09143688 A JP H09143688A
- Authority
- JP
- Japan
- Prior art keywords
- molten metal
- crucible
- evaporation
- evaporating
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は真空蒸着により基板
に蒸着膜を形成する真空蒸着用ルツボに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition crucible for forming a vapor deposition film on a substrate by vacuum vapor deposition.
【０００２】[0002]
【従来の技術】連続真空蒸着装置は真空中で金属等の蒸
発材料を加熱して蒸発させ、鋼板などの基板の表面に蒸
着膜を形成する。この連続真空蒸着装置は通常の湿式メ
ッキでは扱えない高融点金属などの蒸着が可能であり、
付着速度が大きい等の利点を有している。2. Description of the Related Art A continuous vacuum vapor deposition apparatus heats and vaporizes an evaporation material such as metal in a vacuum to form a vapor deposition film on the surface of a substrate such as a steel plate. This continuous vacuum vapor deposition equipment is capable of vapor deposition of refractory metals that cannot be handled by normal wet plating.
It has advantages such as a high deposition rate.
【０００３】図６は従来の連続真空蒸着装置の一例を示
す。連続真空蒸着装置は入側と出側の真空シール装置、
予備加熱室、成膜室等からなり、大気圧でアンコイラー
から巻き戻された鋼板等からなるストリップ（基板）を
入側真空シール装置を通して真空状態とし、予備加熱室
で予備加熱した後、成膜室で成膜し、成膜後出側真空シ
ール装置を通し真空状態を解除して大気圧中に取り出
し、リコイラーで巻き取るようになっている。FIG. 6 shows an example of a conventional continuous vacuum vapor deposition apparatus. The continuous vacuum evaporation system is a vacuum sealing device on the inlet and outlet sides,
A strip (substrate) consisting of a preheating chamber, film forming chamber, etc., rewound from an uncoiler at atmospheric pressure is put into a vacuum state through an inlet side vacuum seal device, and preheated in the preheating chamber before film formation. After the film is formed in the chamber, the film is taken out to atmospheric pressure after passing through the exit side vacuum seal device, taken out to the atmospheric pressure, and taken up by the recoiler.
【０００４】成膜室には電子ビーム２２を放射する電子
銃２１と、電子ビーム２２により溶融した蒸発材料を収
容するルツボ２３と、紙面に対して垂直方向の磁界を発
生する図示しない偏向磁極装置とを備え、電子銃２１よ
り電子ビーム２２を放射し、磁界によって電子ビーム２
２の放射方向を曲げてルツボ２３内に照射し、蒸発材料
を加熱して蒸発させ、ルツボ２３の上方を走行する基板
２４に所定の厚さの蒸着膜を形成している。In the film forming chamber, an electron gun 21 for emitting an electron beam 22, a crucible 23 for containing an evaporation material melted by the electron beam 22, and a deflection magnetic pole device (not shown) for generating a magnetic field in a direction perpendicular to the paper surface are shown. And an electron beam 22 is emitted from the electron gun 21, and the electron beam 2 is generated by a magnetic field.
The radiation direction of No. 2 is bent to irradiate the inside of the crucible 23 to heat and evaporate the evaporation material, and a vapor deposition film having a predetermined thickness is formed on the substrate 24 traveling above the crucible 23.
【０００５】図７はルツボとこの加熱装置の一例を示す
図である。ルツボ２３には材料供給装置２８からワイヤ
ー材の蒸発材料２５が供給され、電子銃２１より照射さ
れる電子ビーム２２により加熱され溶湯２６となり、さ
らに加熱されて蒸気２７となる。この蒸気２７がルツボ
２３の上方を走行する基板２４に付着し蒸着膜を形成す
る。FIG. 7 is a diagram showing an example of the crucible and this heating device. The evaporation material 25 of the wire material is supplied to the crucible 23 from the material supply device 28, and is heated by the electron beam 22 emitted from the electron gun 21 to be the molten metal 26, and further heated to be the vapor 27. The vapor 27 adheres to the substrate 24 traveling above the crucible 23 to form a vapor deposition film.
【０００６】[0006]
【発明が解決しようとする課題】このように連続して供
給される原材料が溶融する際に不純物となってルツボの
溶湯面に浮遊する。この不純物は時間と共に増加し最終
的には溶湯面の全面を覆うようになり、次のような問題
が発生する。 電子ビームが不純物を照射し、溶湯が液滴のまま飛散
するスプラッシュを発生し、このスプラッシュが基板に
付着するとその部分に突起部が発生し、真空シール装置
を傷つけたり、蒸着膜を劣化させる。 溶湯面積が減少し、蒸発量の減少および変化が生じ、
均一な蒸着膜が得られなくなる。 蒸着膜中に不純物が混入し、品質が劣化する。When the raw materials continuously supplied in this way are melted, they become impurities and float on the surface of the crucible. This impurity increases with time and eventually covers the entire surface of the molten metal, causing the following problems. The electron beam irradiates the impurities to generate a splash in which the molten metal is scattered as droplets, and when the splash adheres to the substrate, a projection is generated in that portion, which damages the vacuum seal device or deteriorates the vapor deposition film. The molten metal area decreases, the evaporation amount decreases and changes,
A uniform vapor deposition film cannot be obtained. Impurities are mixed in the deposited film, which deteriorates the quality.
【０００７】本発明は、上述の問題点に鑑みてなされた
もので、ルツボ内を、蒸発材料を溶融するエリアと溶融
した蒸発材料を蒸発させるエリアとに区分し、蒸発した
不純物を含まないようにした真空蒸着用ルツボを提供す
ることを目的とする。The present invention has been made in view of the above-mentioned problems, and divides the inside of the crucible into an area for melting the evaporated material and an area for evaporating the melted evaporated material so as not to contain evaporated impurities. The present invention aims to provide a crucible for vacuum deposition.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
請求項１の発明では、蒸発材料を供給されこれを溶湯と
し、この溶湯を蒸発させて上方の基板に蒸着膜を形成す
る真空蒸着用ルツボにおいて、前記ルツボは、蒸発材料
を供給されこれを溶湯として供給する供給部と、該供給
部の下部と連通して前記溶湯を供給され、この溶湯より
蒸気を発生する蒸発部とから構成され、該蒸発部は加熱
源により加熱される。In order to achieve the above object, the invention of claim 1 is for vacuum vapor deposition in which an evaporation material is supplied and is used as a molten metal, and the molten metal is evaporated to form a vapor deposition film on an upper substrate. In the crucible, the crucible is composed of a supply unit for supplying an evaporation material and supplying it as a molten metal, and an evaporation unit for communicating the lower portion of the supply unit with the molten metal to generate steam from the molten metal. The evaporation section is heated by a heating source.
【０００９】かかる構成により供給部に供給された蒸発
材料は、蒸発部で加熱された溶湯が供給部下部で連通し
ているのでこの溶湯とルツボ自体の潜熱により溶融し溶
湯となる。この溶融する際、蒸発材料に含まれる不純物
は供給部の溶湯表面に浮遊し、蒸発部には供給部下部か
ら不純物を殆ど含まない溶湯が重力の作用で供給される
ので、この溶湯により蒸発部から発生する蒸気には不純
物が殆ど含まれない。なお、蒸発材料の溶融温度は溶湯
の蒸発温度より大幅に低いので、供給部から蒸気は発生
しない。Since the molten material heated in the evaporation section communicates with the lower section of the supply section, the evaporation material supplied to the supply section is melted by the latent heat of the crucible itself and becomes the molten material. During this melting, the impurities contained in the evaporation material float on the surface of the molten metal of the supply part, and the molten metal containing almost no impurities is supplied to the evaporation part from the lower part of the supply part by the action of gravity, so this molten metal evaporates from the evaporation part. Almost no impurities are contained in the vapor generated from the. Since the melting temperature of the evaporation material is significantly lower than the evaporation temperature of the molten metal, no steam is generated from the supply section.
【００１０】請求項２の発明では、請求項１の発明にお
いて、前記供給部と前記蒸発部とは下部を連通管で連通
されている。かかる構成により供給部で蒸発材料が溶融
する際発生する不純物は供給部の湯面に浮遊し、溶湯は
下部に設けられた連通管から蒸発部へ供給されるので蒸
発部には不純物の少ない溶湯が供給される。According to a second aspect of the present invention, in the first aspect of the invention, the lower portion of the supply unit and the evaporation unit are connected by a communication pipe. With this structure, the impurities generated when the evaporation material is melted in the supply unit floats on the molten metal surface of the supply unit, and the molten metal is supplied to the evaporation unit from the communication pipe provided in the lower portion. Is supplied.
【００１１】請求項３の発明では、請求項１の発明にお
いて、前記供給部と前記蒸発部は前記ルツボ内に設けら
れたルツボ底面と間隙を有する仕切り壁によって区分さ
れている。かかる構成により、蒸発材料が溶融する際発
生する不純物は供給部の溶湯表面に浮遊し、不純物の少
ない溶湯がルツボ底面と仕切り壁との間隙を通り蒸発部
へ供給されるので、蒸発部には不純物の少ない溶湯が供
給される。According to a third aspect of the invention, in the first aspect of the invention, the supply section and the evaporation section are separated from each other by a crucible bottom surface provided in the crucible and a partition wall having a gap. With this configuration, the impurities generated when the evaporation material is melted float on the molten metal surface of the supply unit, and the molten metal containing less impurities is supplied to the evaporation unit through the gap between the bottom of the crucible and the partition wall. Molten metal containing few impurities is supplied.
【００１２】請求項４の発明では、請求項１ないし３の
発明において、前記加熱源として電子銃を用い電子ビー
ムを照射して前記蒸発部を加熱する。電子鏡は局部的に
高エネルギーを照射することができ、発生する電子ビー
ムに磁界を与えて偏向させたり、周期的に照射位置を変
えることができるので、所定位置の加熱を正確に行うこ
とができる。According to a fourth aspect of the present invention, in the first to third aspects, an electron gun is used as the heating source to irradiate an electron beam to heat the evaporation section. Since the electron mirror can locally irradiate high energy, a generated magnetic field can be given a magnetic field to deflect the electron beam, and the irradiation position can be periodically changed, so that heating at a predetermined position can be performed accurately. it can.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。図１は本発明の第１実施の
形態の構成を示す図である。真空チャンバー１２内には
ルツボ３が設けられ、電子銃１から放射される電子ビー
ム２により加熱される。ルツボ３は材料供給装置８より
ワイヤー状の蒸発材料５を連続的に供給される供給部９
と、この蒸発材料５が溶融した溶湯６に電子ビーム２を
照射されて蒸気７を発生し、上方を走行する鋼板等より
なる基板４に蒸着膜を蒸着する蒸発部１０と、この蒸発
部１０と供給部９の下部を連通する連結管１１より構成
される。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the configuration of the first embodiment of the present invention. A crucible 3 is provided in the vacuum chamber 12 and is heated by the electron beam 2 emitted from the electron gun 1. The crucible 3 is a supply unit 9 to which the wire-shaped evaporation material 5 is continuously supplied from the material supply device 8.
Then, the molten metal 6 in which the evaporation material 5 is melted is irradiated with the electron beam 2 to generate the vapor 7, and the evaporation portion 10 that vapor-deposits a vapor deposition film on the substrate 4 made of a steel plate or the like traveling above, and the evaporation portion 10 And a connecting pipe 11 that connects the lower part of the supply unit 9 to each other.
【００１４】ルツボ３は上述したように供給部９と蒸発
部１０に分かれており、溶湯６は下部連通管１１により
供給部９より蒸発部１０へ移動し、電子ビーム２により
加熱され蒸気７となる。供給部９には蒸発材料５が連続
的に供給されるが、電子ビーム２により加熱された蒸発
部１０の溶湯６と連通管１１より伝達される潜熱により
蒸発材料５は溶融し溶湯となる。この溶融の際発生した
蒸発材料５に含まれる不純物は供給部９の溶湯面に浮遊
し、連通管１１より蒸発部１０へ供給される溶湯には殆
ど含まれない。これにより蒸発部１０から蒸発する蒸気
７には不純物は殆ど含まれず、高品質の蒸着膜が得られ
る。The crucible 3 is divided into the supply section 9 and the evaporation section 10 as described above, and the molten metal 6 is moved from the supply section 9 to the evaporation section 10 by the lower communicating pipe 11, heated by the electron beam 2 and vapor 7. Become. The evaporation material 5 is continuously supplied to the supply unit 9, but the evaporation material 5 is melted into a molten metal by the latent heat transferred from the molten metal 6 of the evaporation unit 10 heated by the electron beam 2 and the communication pipe 11. The impurities contained in the evaporation material 5 generated during the melting float on the molten metal surface of the supply unit 9 and are hardly contained in the molten metal supplied from the communication pipe 11 to the evaporation unit 10. As a result, the vapor 7 evaporated from the evaporation unit 10 contains almost no impurities, and a high quality vapor deposition film can be obtained.
【００１５】なお、蒸発材料５の溶融温度は蒸発温度よ
りかなり低いので、供給部９から不純物を含んだ蒸気は
発生しない。また発生しないように蒸発部１０の加熱は
制御される。例えば、蒸発材料５として、アルミニウム
がよく用いられるが、この溶融温度は６６０℃程度であ
り、この蒸発温度は１４００℃程度であるので、蒸発部
１０で蒸発させつつ、供給部９の温度を蒸発温度以下に
保つことは容易に可能である。Since the melting temperature of the evaporation material 5 is considerably lower than the evaporation temperature, vapor containing impurities is not generated from the supply section 9. The heating of the evaporation unit 10 is controlled so that it does not occur. For example, aluminum is often used as the evaporation material 5, but the melting temperature is about 660 ° C. and the evaporation temperature is about 1400 ° C. Therefore, the temperature of the supply unit 9 is evaporated while the evaporation unit 10 is evaporating. It is easily possible to keep it below the temperature.
【００１６】ルツボ３の材質はアルミナ、カーボン等の
耐火材およびタングステン、モリブデン等の高融点金属
などが用いられる。また水冷銅ルツボなども用いられ
る。これらは蒸発材料によって選択される。また、材料
供給装置８から供給される材料は、図１で示したワイヤ
ー材の外、ロッド材、ペレット材等があり、いずれの材
料でもよい。As a material of the crucible 3, a refractory material such as alumina or carbon and a refractory metal such as tungsten or molybdenum are used. A water-cooled copper crucible is also used. These are selected according to the evaporation material. Further, the material supplied from the material supply device 8 includes the wire material shown in FIG. 1, a rod material, a pellet material, and the like, and any material may be used.
【００１７】加熱源として電子銃１による電子ビーム２
を用いたが、電子銃１は局部的に２０００〜３０００℃
程度の加熱が可能で、しかも電子ビーム２の照射位置を
磁界により制御できるので加熱源として適している。な
お、加熱方法としては高周波加熱、電気抵抗加熱、誘導
加熱なども使用することができる。An electron beam 2 from an electron gun 1 as a heating source
The electron gun 1 was locally used at 2000 to 3000 ° C.
Since it can be heated to a certain extent and the irradiation position of the electron beam 2 can be controlled by a magnetic field, it is suitable as a heating source. As the heating method, high frequency heating, electric resistance heating, induction heating or the like can be used.
【００１８】図２は本発明の第２実施の形態を示す。本
図および以降の図において、図１と同一符号は同一の機
能を有する部材、機器等を表す。本実施の形態は第１実
施の形態によるルツボ３、電子銃１、材料供給装置８を
基板４の走行方向に２組タンデムに設置したもので、２
層の蒸着膜を形成することができる。両ルツボ３の蒸発
材料５を同じくすれば同一材料の２層蒸着膜が得られ、
異なる材料を用いれば異なる２層の蒸着膜が得られる。
他は第１実施の形態と同様である。FIG. 2 shows a second embodiment of the present invention. In this figure and the following figures, the same reference numerals as those in FIG. 1 represent members, devices and the like having the same functions. In this embodiment, the crucible 3, the electron gun 1, and the material supply device 8 according to the first embodiment are installed in two sets in a tandem in the traveling direction of the substrate 4.
A vapor deposited film of layers can be formed. If the evaporation materials 5 of both crucibles 3 are the same, a two-layer vapor deposition film of the same material is obtained,
If different materials are used, two different vapor deposition films can be obtained.
Others are the same as those in the first embodiment.
【００１９】図３は本発明の第３実施の形態を示す。本
実施の形態はルツボ３の中央部に中間壁１３を底面と間
隙１４を設けて設定して供給部９と蒸発部１０とを区分
したものである。供給部９で発生した不純物は溶湯面に
浮遊し、中間壁１３により蒸発部１０への侵入を阻止さ
れる。また溶湯６は中間壁１３とルツボ３の底面との間
隙１４より蒸発部１０へ流入するので不純物の蒸発部１
０への侵入が阻止される。FIG. 3 shows a third embodiment of the present invention. In the present embodiment, an intermediate wall 13 is set in the central portion of the crucible 3 with a bottom face and a gap 14 provided between the supply portion 9 and the evaporation portion 10. The impurities generated in the supply unit 9 float on the surface of the molten metal, and are prevented from entering the evaporation unit 10 by the intermediate wall 13. Further, since the molten metal 6 flows into the evaporation portion 10 through the gap 14 between the intermediate wall 13 and the bottom surface of the crucible 3, the impurity evaporation portion 1
Invasion of 0 is blocked.
【００２０】図４は本発明の第４実施の形態を示す。本
実施の形態は第３実施の形態のルツボ３、電子銃１、材
料供給装置８等を基板の走行方向にタンデムに配置した
もので、第２実施の形態と第３実施の形態とを組み合わ
せたタイプとなっている。本実施の形態はルツボ３を中
央壁１５で大きく区分し、各区分に中間壁１３を設けて
供給部９と蒸発部１０に区分したもので、中央壁１５と
中間壁１３はルツボ３の底面と間隙１４を設けて設置
し、ルツボ３全体はこの間隙１４により連通している。FIG. 4 shows a fourth embodiment of the present invention. In this embodiment, the crucible 3, the electron gun 1, the material supply device 8 and the like of the third embodiment are arranged in tandem in the traveling direction of the substrate, and the second embodiment and the third embodiment are combined. It has become a type. In this embodiment, the crucible 3 is largely divided by a central wall 15, and an intermediate wall 13 is provided in each section to divide the crucible 3 into a supply section 9 and an evaporation section 10. The central wall 15 and the intermediate wall 13 are the bottom surface of the crucible 3. A space 14 is provided between the crucible 3 and the crucible 3, and the entire crucible 3 communicates with the space 14.
【００２１】図５は本発明の第５実施の形態を示す。本
実施の形態は第４実施の形態が供給部９を２個所設けて
いるのに対し、１個所としたものである。材料供給装置
８も１個所となり、構造が単純化される。FIG. 5 shows a fifth embodiment of the present invention. In the present embodiment, the supply unit 9 is provided in two places in the fourth embodiment, whereas it is provided in one place. The material supply device 8 is also provided in one place, and the structure is simplified.
【００２２】上述した実施の形態では連続真空蒸着装置
について説明したが、本発明はその他、バッチ式の真空
蒸着装置、イオンプレーティング、およびＰＶＤ装置に
も適応できる。While the continuous vacuum vapor deposition apparatus has been described in the above embodiment, the present invention can be applied to other batch type vacuum vapor deposition apparatuses, ion platings, and PVD apparatuses.
【００２３】[0023]
【発明の効果】以上の説明より明らかなように、本発明
は、ルツボを、蒸発材料を溶融し溶湯を供給する供給部
と、この溶湯を蒸発する蒸発部に区分し両者を下部で連
通することにより、蒸発材料を溶融したときに生じる不
純物を供給部の溶湯面に浮遊させ、蒸発部には下部の連
通部より溶湯を供給することにより不純物の少ない蒸着
膜を得ることができる。As is apparent from the above description, according to the present invention, the crucible is divided into a supply part for melting the evaporation material to supply the molten metal and an evaporation part for evaporating the molten metal, and the crucibles communicate with each other at the lower part. As a result, impurities generated when the evaporation material is melted are floated on the molten metal surface of the supply unit, and the molten metal is supplied to the evaporation unit from the lower communication unit, so that a vapor deposition film with less impurities can be obtained.
【図１】本発明の第１実施の形態の構成を示す図であ
る。FIG. 1 is a diagram showing a configuration of a first exemplary embodiment of the present invention.
【図２】本発明の第２実施の形態の構成を示す図であ
る。FIG. 2 is a diagram showing a configuration of a second exemplary embodiment of the present invention.
【図３】本発明の第３実施の形態の構成を示す図であ
る。FIG. 3 is a diagram showing a configuration of a third exemplary embodiment of the present invention.
【図４】本発明の第４実施の形態の構成を示す図であ
る。FIG. 4 is a diagram showing a configuration of a fourth exemplary embodiment of the present invention.
【図５】本発明の第５実施の形態の構成を示す図であ
る。FIG. 5 is a diagram showing a configuration of a fifth exemplary embodiment of the present invention.
【図６】連続真空蒸着装置の構成を示す図である。FIG. 6 is a diagram showing a configuration of a continuous vacuum vapor deposition device.
【図７】ルツボと電子銃、蒸発材料供給装置を示す図で
ある。FIG. 7 is a diagram showing a crucible, an electron gun, and an evaporation material supply device.
１ 電子銃 ２ 電子ビーム ３ ルツボ ４ 基板 ５ 蒸発材料 ６ 溶湯 ７ 蒸気 ８ 材料供給装置 ９ 供給部 １０ 蒸発部 １１ 連通管 １２ 真空チャンバー １３ 中間壁 １４ 間隙 １５ 中央壁 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Electron beam 3 Crucible 4 Substrate 5 Evaporation material 6 Molten metal 7 Vapor 8 Material supply device 9 Supply part 10 Evaporation part 11 Communication pipe 12 Vacuum chamber 13 Intermediate wall 14 Gap 15 Central wall
フロントページの続き (72)発明者 毛利 元治 神奈川県横浜市磯子区新中原町１番地 石 川島播磨重工業株式会社横浜エンジニアリ ングセンター内Continuation of the front page (72) Inventor Motoharu Mohri 1 Shin-Nakahara-cho, Isogo-ku, Yokohama-shi, Kanagawa Ishikawashima Harima Heavy Industries Co., Ltd. Yokohama Engineering Center
Claims (4)
の溶湯を蒸発させて上方の基板に蒸着膜を形成する真空
蒸着用ルツボにおいて、 前記ルツボは、蒸発材料を供給されこれを溶湯として供
給する供給部と、該供給部の下部と連通して前記溶湯を
供給され、この溶湯より蒸気を発生する蒸発部とから構
成され、該蒸発部は加熱源により加熱されることを特徴
とする真空蒸着用ルツボ。1. A vacuum evaporation crucible for supplying an evaporation material to form a molten metal, and evaporating the molten metal to form a vapor deposition film on an upper substrate, wherein the crucible is supplied with the evaporation material and supplied as the molten metal. And a lower part of the supply part, and a vaporization part that is supplied with the molten metal and that generates vapor from the molten metal, and the evaporation part is heated by a heating source. Crucible for vapor deposition.
管で連通されていることを特徴とする請求項１記載の真
空蒸着用ルツボ。2. The crucible for vacuum vapor deposition according to claim 1, wherein the supply unit and the evaporation unit are connected at their bottoms by a communication pipe.
に設けられルツボ底面と間隙を有する仕切り壁によって
区分されていることを特徴とする請求項１記載の真空蒸
着用ルツボ。3. The crucible for vacuum vapor deposition according to claim 1, wherein the supply part and the evaporation part are divided by a partition wall provided in the crucible and having a gap with a bottom surface of the crucible.
ムを照射して前記蒸発部を加熱するようにしたことを特
徴とする請求項１ないし３のいずれかに記載の真空蒸着
用ルツボ。4. The crucible for vacuum vapor deposition according to claim 1, wherein an electron gun is used as the heating source to irradiate an electron beam to heat the evaporation section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30938795A JPH09143688A (en) | 1995-11-28 | 1995-11-28 | Crucible for vacuum deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30938795A JPH09143688A (en) | 1995-11-28 | 1995-11-28 | Crucible for vacuum deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09143688A true JPH09143688A (en) | 1997-06-03 |
Family
ID=17992405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30938795A Pending JPH09143688A (en) | 1995-11-28 | 1995-11-28 | Crucible for vacuum deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09143688A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007034790A1 (en) * | 2005-09-20 | 2007-03-29 | Tohoku University | Film forming apparatus, evaporating jig and measuring method |
| CN111485201A (en) * | 2019-01-28 | 2020-08-04 | 广州先艺电子科技有限公司 | Evaporation source of vacuum evaporation equipment |
-
1995
- 1995-11-28 JP JP30938795A patent/JPH09143688A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007034790A1 (en) * | 2005-09-20 | 2007-03-29 | Tohoku University | Film forming apparatus, evaporating jig and measuring method |
| JP5358778B2 (en) * | 2005-09-20 | 2013-12-04 | 国立大学法人東北大学 | Film forming apparatus, evaporation jig, and measuring method |
| CN111485201A (en) * | 2019-01-28 | 2020-08-04 | 广州先艺电子科技有限公司 | Evaporation source of vacuum evaporation equipment |
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