JPH09129567A - Wafer support structure of vertical wafer boat - Google Patents
Wafer support structure of vertical wafer boatInfo
- Publication number
- JPH09129567A JPH09129567A JP30495195A JP30495195A JPH09129567A JP H09129567 A JPH09129567 A JP H09129567A JP 30495195 A JP30495195 A JP 30495195A JP 30495195 A JP30495195 A JP 30495195A JP H09129567 A JPH09129567 A JP H09129567A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- vertical
- silicon wafer
- support structure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハの支
持構造に係り、特に縦型の拡散炉等の内部に半導体ウエ
ハを配置するための縦型ウエハボートにおける半導体ウ
エハの支持構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer support structure, and more particularly to a semiconductor wafer support structure in a vertical wafer boat for placing the semiconductor wafer inside a vertical diffusion furnace or the like.
【０００２】[0002]
【従来の技術】従来、半導体集積回路などの半導体装置
の製造工程においては、半導体である単結晶シリコンウ
エハにｐ型やｎ型の導電型を形成するために不純物を拡
散したり、表面を保護する酸化膜の形成等に、炉心管を
水平に配置した横型の拡散炉と称する電気炉が使用され
てきた。この横型拡散炉の場合、シリコンウエハは、石
英ガラス製のウエハボートと称する支持部材に立てて横
方向に多数並べて配置され、拡散炉に搬入したり拡散炉
から搬出するようにしていた。しかし、近年、半導体装
置の高集積度化に伴い、パーティクルの減少、酸素の巻
き込みの減少、クリーンルームの床面積の減少などを図
るため、拡散炉ばかりでなく、化学気相成長法（ＣＶ
Ｄ）によって絶縁酸化膜などを形成するＣＶＤ炉におい
ても急速に縦型への移行が進められている。2. Description of the Related Art Conventionally, in a manufacturing process of a semiconductor device such as a semiconductor integrated circuit, impurities are diffused or a surface is protected to form a p-type or n-type conductivity type in a single crystal silicon wafer which is a semiconductor. An electric furnace called a horizontal diffusion furnace having a horizontally arranged core tube has been used for forming an oxide film. In this horizontal diffusion furnace, a large number of silicon wafers are arranged side by side in a horizontal direction on a support member called a wafer boat made of quartz glass, and are carried into or out of the diffusion furnace. However, in recent years, with the increasing integration of semiconductor devices, in order to reduce the number of particles, the entrapment of oxygen, the floor area of a clean room, etc., not only the diffusion furnace but also the chemical vapor deposition (CV) method is used.
Also in the CVD furnace for forming an insulating oxide film or the like according to D), the shift to the vertical type is rapidly progressing.
【０００３】縦型の拡散炉は、炉心管が鉛直向に配置し
てある。このため、ウエハボートも縦型となっていて、
蚕棚のようにシリコンウエハを上下方向に積み重ねるよ
うに配置するようになっている。図４（１）は、縦型ウ
エハボートの一例を示したものである。In the vertical diffusion furnace, the core tube is arranged vertically. Therefore, the wafer boat is also vertical,
It is arranged so that silicon wafers are vertically stacked like a silkworm shelf. FIG. 4A shows an example of the vertical wafer boat.
【０００４】すなわち、縦型ウエハボート１０は、石英
ガラスや炭化ケイ素（ＳｉＣ）またはシリコンによって
形成され、円形のベース１２に複数（例えば４本）の支
柱１４（１４ａ〜１４ｄ）が立設してあって、これらの
支柱１４の上部に円形の天板１６が取り付けてある。ま
た、各支柱１４には、図４（２）に示したように、上下
方向に等間隔で複数の挿入溝１８が設けてあって、これ
らの挿入溝１８間に形成された突部２０がシリコンウエ
ハ２２の支持部となっていて、突部２０にシリコンウエ
ハ２２の周縁部を乗せることにより、シリコンウエハ２
２を４点で支持するようにしてある。そして、シリコン
ウエハ２２は、支柱１４ａ、１４ｄ間からウエハボート
１０に出し入れするようになっている。That is, the vertical wafer boat 10 is formed of quartz glass, silicon carbide (SiC) or silicon, and a plurality of (for example, four) columns 14 (14a to 14d) are erected on a circular base 12. Therefore, a circular top plate 16 is attached to the upper part of these columns 14. Further, as shown in FIG. 4B, each of the columns 14 is provided with a plurality of insertion grooves 18 at equal intervals in the vertical direction, and the protrusions 20 formed between the insertion grooves 18 are provided. The silicon wafer 22 serves as a support portion for the silicon wafer 22 and the peripheral edge portion of the silicon wafer 22 is placed on the protrusion 20.
2 is supported at 4 points. Then, the silicon wafer 22 is put into and taken out of the wafer boat 10 from between the columns 14a and 14d.
【０００５】一方、シリコンウエハ２２を図４（３）の
ように支持する場合もある。すなわち、各支柱１４ａ〜
１４ｄの突部２０にＳｉＣによって構成した円板状棚板
であるサセプタ２４を架け渡し、その上にシリコンウエ
ハ２２を乗せるようにしている。これは、シリコンウエ
ハ２２の大径化に伴い、シリコンウエハ２２を１０００
℃以上の温度で加熱処理した際に、周縁部の４点支持で
はシリコンウエハ２２が自重によって垂れ下がって熱変
形するため、シリコンウエハ２２の下面全体を支持して
シリコンウエハ２２の熱変形を防止するようにしたもの
である。On the other hand, the silicon wafer 22 may be supported as shown in FIG. That is, each of the columns 14a-
A susceptor 24, which is a disk-shaped shelf made of SiC, is bridged over the protrusion 20 of 14d, and the silicon wafer 22 is placed thereon. As the diameter of the silicon wafer 22 increases, the
When the heat treatment is performed at a temperature of ℃ or more, since the silicon wafer 22 hangs down by its own weight and thermally deforms at the four-point support of the peripheral portion, the entire lower surface of the silicon wafer 22 is supported to prevent thermal deformation of the silicon wafer 22. It was done like this.
【０００６】[0006]
【発明が解決しようとする課題】しかし、従来の縦型ウ
エハボート１０においては、図４（２）のようにシリコ
ンウエハ２２の周縁部を突部２０によって４点支持する
場合、シリコンウエハ２２と突部２０とが滑り接触とな
っているため、シリコンウエハ２２を高温処理したとき
に、シリコンウエハ２２の周縁部が外側に熱膨張する際
に、突部２０との間の摩擦によって膨張が妨げられる力
を受け、熱膨張による変形等に伴う応力によってスリッ
プと称する転位列からなる欠陥が発生する。そして、こ
のスリップは、ウエハの直径が大きくなるのに伴ってよ
り顕在化し、８インチ径ウエハなどの大径のウエハを高
温処理する場合の大きな問題となっている。また、図４
（３）に示したサセプタ２４を用いた支持構造において
も、熱膨張率の相違や両者が完全に密接していないこと
などによる摩擦に伴う応力を受け、シリコンウエハ２２
にスリップが発生する問題がある。However, in the conventional vertical wafer boat 10, when the peripheral portion of the silicon wafer 22 is supported by the projections 20 at four points as shown in FIG. Since the protrusion 20 is in sliding contact, when the silicon wafer 22 is subjected to a high temperature treatment, when the peripheral edge of the silicon wafer 22 thermally expands outward, the friction between the protrusion 20 prevents the expansion. When a force is applied, stress caused by deformation due to thermal expansion causes defects called dislocation arrays called slips. Then, this slip becomes more apparent as the diameter of the wafer becomes larger, and it becomes a serious problem when a large-diameter wafer such as an 8-inch diameter wafer is processed at a high temperature. FIG.
Also in the support structure using the susceptor 24 shown in (3), the silicon wafer 22 receives stress due to friction due to the difference in coefficient of thermal expansion and the fact that the two are not in close contact with each other.
There is a problem that slip occurs.
【０００７】本発明は、前記従来技術の欠点を解消する
ためになされたもので、半導体ウエハにスリップが発生
するのを防止することを目的としている。The present invention has been made in order to solve the above-mentioned drawbacks of the prior art, and an object thereof is to prevent the occurrence of a slip on a semiconductor wafer.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明に係る縦型ウエハボートのウエハ支持構造
は、半導体ウエハが熱膨張する際に、摩擦によりウエハ
ボートのウエハ支持から受ける応力を小さくするため、
ウエハ支持部に半導体ウエハの膨張によって移動する移
動体を配置して半導体ウエハを支持するようにしてい
る。すなわち、本発明は、ベース上に立設した支柱によ
って半導体ウエハを支持する縦型ウエハボートのウエハ
支持構造において、前記ウエハボートのウエハ支持部
に、前記半導体ウエハの半径方向に移動可能な移動体を
配置し、この移動体を介して前記半導体ウエハを支持す
る構成にした。移動体は、ＳｉＣ薄膜によって形成した
中空のコロであることが望ましい。このＳｉＣ薄膜から
なる中空のコロは、例えば太さ２〜５ｍｍの棒状黒鉛基
材の表面に、ＣＶＤによってＳｉＣを０．２〜１．０ｍ
ｍ蒸着したのち、ＳｉＣを蒸着した黒鉛基材を適宜の長
さに切断し、黒鉛基材を燃焼除去することによって得る
ことができる。In order to achieve the above object, the wafer support structure of the vertical wafer boat according to the present invention receives from the wafer support of the wafer boat due to friction when the semiconductor wafer is thermally expanded. To reduce the stress,
A movable body that moves due to the expansion of the semiconductor wafer is arranged in the wafer supporting portion to support the semiconductor wafer. That is, according to the present invention, in a wafer support structure of a vertical wafer boat that supports a semiconductor wafer by a support provided upright on a base, a movable body that is movable in a radial direction of the semiconductor wafer is attached to a wafer support portion of the wafer boat. Is arranged, and the semiconductor wafer is supported via the moving body. The moving body is preferably a hollow roller formed of a SiC thin film. The hollow roller made of this SiC thin film is, for example, 0.2 to 1.0 m of SiC by CVD on the surface of a rod-shaped graphite base material having a thickness of 2 to 5 mm.
m after vapor deposition, the graphite substrate on which SiC is deposited is cut into an appropriate length, and the graphite substrate is burned and removed.
【０００９】また、ウエハ支持部は、前記移動体を配置
する面を凹曲面に形成したり、半導体ウエハの半径方向
において内側より外側が漸次高くなっている傾斜面に形
成することができる。また、ウエハ支持部は前記支柱に
保持させた円板状棚板によって構成し、移動体は、棚板
上の、半導体ウエハの中心から、半導体ウエハの半径の
ほぼ５０〜９０％に相当する円周上に複数配置するとよ
い。Further, the wafer supporting portion can be formed such that the surface on which the moving body is arranged is formed into a concave curved surface or an inclined surface in which the outer side is gradually higher than the inner side in the radial direction of the semiconductor wafer. Further, the wafer supporting portion is constituted by a disc-shaped shelf plate held by the support, and the moving body is a circle corresponding to approximately 50 to 90% of the radius of the semiconductor wafer from the center of the semiconductor wafer on the shelf plate. It is advisable to arrange multiple units on the circumference.
【００１０】[0010]
【作用】上記のごとく構成した本発明は、半導体ウエハ
を高温処理する際に半導体ウエハが熱膨張すると、半導
体ウエハと接触している移動体がウエハの熱膨張に伴っ
てウエハ支持部の面上を移動する。このため、半導体ウ
エハは、熱膨張に対する自由度が増大して容易に熱膨張
することが可能となり、半導体ウエハに作用する力が大
幅に減少し熱膨張による変形などが防止でき、内部応力
が小さくなってスリップの発生を防止することができ
る。特に、移動体としてコロなどの転動体を用いると、
転動体が半導体ウエハの熱膨張に伴ってウエハ支持部の
面上を容易に転動し、半導体ウエハには、従来の滑り摩
擦と異なってころがり摩擦が作用するため、半導体ウエ
ハの熱膨張が極めて円滑、容易に行われる。According to the present invention constructed as described above, when the semiconductor wafer is thermally expanded during high-temperature processing of the semiconductor wafer, the moving body in contact with the semiconductor wafer is placed on the surface of the wafer support portion due to the thermal expansion of the wafer. To move. Therefore, the semiconductor wafer has an increased degree of freedom with respect to thermal expansion and can be easily thermally expanded, the force acting on the semiconductor wafer is significantly reduced, deformation due to thermal expansion can be prevented, and internal stress is small. Therefore, the occurrence of slip can be prevented. In particular, if a rolling element such as a roller is used as the moving body,
The rolling element easily rolls on the surface of the wafer support portion due to the thermal expansion of the semiconductor wafer, and rolling friction acts on the semiconductor wafer, which is different from the conventional sliding friction. Smooth and easy.
【００１１】移動体としてＳｉＣ薄膜からなる中空コロ
を用いると、小型軽量で高温での熱変形も小さく、また
熱容量が小さい移動体が得られ、容易に転動するととも
に半導体ウエハに与える熱的影響も少なく、半導体ウエ
ハの熱膨張に伴う変形や熱分布が小さくなり、スリップ
の発生をより確実に防止することができる。また、移動
体を配置するウエハ支持部の面を凹曲面や傾斜面とする
と、移動体がウエハ支持部から転落するのを防止するこ
とができるばかりでなく、移動体の配置位置が一定とな
り、半導体ウエハの支持位置が一定となって品質を安定
させることができる。そして、半導体ウエハの中心か
ら、半導体ウエハの半径のほぼ７０％に相当する円周上
に複数の移動体を配置すると、半導体ウエハの移動体よ
り内側の面積と外側の面積とがほぼ等しく、移動体の両
側の半導体ウエハの重量がほぼ等しくなって、半導体ウ
エハの熱変形などをより小さくすることができ、このた
めスリップの発生をより効果的に防止できる。When a hollow roller made of a SiC thin film is used as a moving body, a moving body having a small size, a small weight, a small thermal deformation at a high temperature and a small heat capacity can be obtained, which easily rolls and has a thermal influence on a semiconductor wafer. Therefore, the deformation and heat distribution due to the thermal expansion of the semiconductor wafer can be reduced, and the occurrence of slip can be more reliably prevented. Further, if the surface of the wafer support portion on which the moving body is arranged is a concave curved surface or an inclined surface, not only can the moving body be prevented from falling off the wafer support portion, but also the arrangement position of the moving body becomes constant, The supporting position of the semiconductor wafer becomes constant and the quality can be stabilized. Then, when a plurality of moving bodies are arranged on the circumference corresponding to approximately 70% of the radius of the semiconductor wafer from the center of the semiconductor wafer, the area inside the moving body of the semiconductor wafer and the area outside the moving body are substantially equal to each other. Since the weights of the semiconductor wafers on both sides of the body are substantially equal to each other, thermal deformation and the like of the semiconductor wafer can be further reduced, so that the occurrence of slip can be more effectively prevented.
【００１２】[0012]
【発明の実施の形態】本発明に係る縦型ウエハボートの
ウエハ支持構造の好ましい実施の形態を、添付図面に従
って詳細に説明する。なお、前記従来技術において説明
した部分に対応する部分については、同一の符号を付
し、その説明を省略する。BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of a wafer support structure for a vertical wafer boat according to the present invention will be described in detail with reference to the accompanying drawings. Note that the same reference numerals are given to portions corresponding to the portions described in the above-described conventional technology, and description thereof is omitted.
【００１３】図１（１）は、本発明の第１実施形態に係
る縦型ウエハボートのウエハ支持構造を示す側面図であ
る。縦型ウエハボートを構成している複数の支柱１４の
それぞれには、上下方向に等間隔で複数の挿入溝１８が
設けてあって、これらの挿入溝１８の間がウエハ支持部
である突部２０となっている。そして、ウエハの支持面
となる各突部２０の上面２６は平坦に形成してあって、
この上面２６に移動体であるコロ２８が配置してある。
コロ２８は、図１（２）に示してあるように、挿入溝１
８の側壁に平行に配置してあって、シリコンウエハ２２
の半径方向に転動できるようになっている。また、コロ
２８は、棒状黒鉛基材に炭化ケイ素（ＳｉＣ）をＣＶＤ
によって蒸着したＳｉＣ薄膜から形成され、図１（３）
に示したように中空の円筒状をなしている。FIG. 1A is a side view showing a wafer support structure of a vertical wafer boat according to the first embodiment of the present invention. A plurality of insertion grooves 18 are provided at equal intervals in the vertical direction on each of the plurality of columns 14 that form the vertical wafer boat, and a projection portion that is a wafer support portion is provided between these insertion grooves 18. It is 20. The upper surface 26 of each protrusion 20 serving as a wafer supporting surface is formed flat,
A roller 28, which is a moving body, is arranged on the upper surface 26.
As shown in FIG. 1 (2), the roller 28 has the insertion groove 1
8 is arranged parallel to the side wall of the silicon wafer 22.
It can roll in the radial direction. Further, the roller 28 is formed by CVD of silicon carbide (SiC) on a rod-shaped graphite base material.
Formed from SiC thin film deposited by
It has a hollow cylindrical shape as shown in FIG.
【００１４】上記のごとく構成した第１実施形態は、支
柱１４に形成した突部２０の上面２６に、コロ２８をシ
リコンウエハ２２の半径方向に転動できるように配置す
る。その後、図１（１）に示したように、シリコンウエ
ハ２２の周縁部をコロ２８に乗せ、コロ２８を介してシ
リコンウエハ２２を突部２０によって支持する。そし
て、複数のシリコンウエハ２２を縦型ウエハボートに支
持させた状態で拡散炉（図示せず）に入れ、酸化膜の形
成などの熱処理を行なうと、シリコンウエハ２２は熱膨
張して周縁部が外側に伸びる。In the first embodiment constructed as described above, the rollers 28 are arranged on the upper surface 26 of the projection 20 formed on the support 14 so as to be able to roll in the radial direction of the silicon wafer 22. Thereafter, as shown in FIG. 1A, the peripheral edge of the silicon wafer 22 is placed on the roller 28, and the silicon wafer 22 is supported by the protrusion 20 via the roller 28. Then, when a plurality of silicon wafers 22 are supported by a vertical wafer boat and placed in a diffusion furnace (not shown) and heat treatment such as formation of an oxide film is performed, the silicon wafers 22 are thermally expanded and their peripheral portions are It extends outside.
【００１５】シリコンウエハ２２の下面に接触している
コロ２８は、シリコンウエハ２２の熱膨張によって回転
モーメントが与えられ、突部２０の上面を図１（１）の
左方向に転動する。そして、シリコンウエハ２２は、コ
ロ２８ところがり接触となっているためにコロ２８から
受ける力が極めて小さく、接触部の自由度が大きくなっ
て熱膨張を妨げられることがなく、熱膨張による変形な
どによるスリップの発生を防止することができる。The roller 28 in contact with the lower surface of the silicon wafer 22 is given a rotational moment by the thermal expansion of the silicon wafer 22 and rolls on the upper surface of the protrusion 20 in the left direction in FIG. 1 (1). Since the silicon wafer 22 is in point-to-point contact with the roller 28, the force received from the roller 28 is extremely small, the degree of freedom of the contact portion is increased, and thermal expansion is not hindered. It is possible to prevent the occurrence of slip due to.
【００１６】しかも、コロ２８は、ＳｉＣ薄膜によって
円筒状に形成してあるため、小型軽量であって高温での
変形も小さく、シリコンウエハ２２の熱膨張によって容
易に転動するため、シリコンウエハ２２の熱膨張を拘束
したり、あるいは酸化膜の形成時等にコロ２８とシリコ
ンウエハ２２とが固着するのを防止することができ、シ
リコンウエハ２２の熱膨張が円滑に行なわれ、さらにＳ
ｉＣは熱容量が小さいため、シリコンウエハ２２に与え
る熱的影響が極めて小さく、シリコンウエハ２２の熱分
布が小さくなってスリップの発生をより確実に抑止する
ことができる。Moreover, since the roller 28 is formed of a SiC thin film in a cylindrical shape, it is small and lightweight, has a small deformation at high temperature, and easily rolls due to the thermal expansion of the silicon wafer 22. The thermal expansion of the silicon wafer 22 can be restrained, or the rollers 28 and the silicon wafer 22 can be prevented from sticking to each other when an oxide film is formed.
Since iC has a small heat capacity, the thermal effect on the silicon wafer 22 is extremely small, and the heat distribution of the silicon wafer 22 becomes small, so that the occurrence of slip can be more reliably suppressed.
【００１７】なお、前記実施形態においては、移動体と
して中空のコロ２８を用いた場合について説明したが、
中実のコロあるいはシリコン、石英ガラスによって形成
したコロを用いてもよく、図１（４）に示したように、
ＳｉＣや石英ガラスまたはシリコン等によって形成した
球体３０を用いてもよい。また、前記実施形態において
は、コロ２８を配置する突部２０の上面２６が平坦であ
る場合について説明したが、図２（１）に示したよう
に、突部２０の上面２６に円弧等の凹曲面３２を形成
し、この凹曲面３２にコロ２８を配置してもよい。この
ように、コロ２８を配置する面を凹曲面３２とするれ
ば、コロ２８が突部２０から転がり落ちるのを防止する
ことができるとともに、コロ２８を常に一定位置に配置
すること可能となり、シリコンウエハ２２の支持位置を
一定にすることができてシリコンウエハ２２の品質を一
定に保持できる。In the above embodiment, the case where the hollow roller 28 is used as the moving body has been described.
A solid roller or a roller formed of silicon or quartz glass may be used, as shown in FIG.
A sphere 30 formed of SiC, quartz glass, silicon, or the like may be used. Further, in the above-described embodiment, the case where the upper surface 26 of the protrusion 20 on which the roller 28 is arranged is flat has been described, but as shown in FIG. 2A, the upper surface 26 of the protrusion 20 has an arc or the like. The concave curved surface 32 may be formed, and the roller 28 may be arranged on the concave curved surface 32. In this way, if the surface on which the rollers 28 are arranged is the concave curved surface 32, it is possible to prevent the rollers 28 from rolling off the projections 20, and it is possible to arrange the rollers 28 at a fixed position at all times. The supporting position of the silicon wafer 22 can be made constant, and the quality of the silicon wafer 22 can be kept constant.
【００１８】さらに、突部２０の上面２６に、図２
（２）のように、シリコンウエハ２２の半径方向内側と
なる突部２０の先端側を、シリコンウエハ２２の半径方
向外側となる基端側より低くした傾斜面３４を形成し、
この傾斜面３４にコロ２８を配置してもよい。この場合
においても、凹状曲面３２と同様の効果を得ることがで
きる。なお、突部２０の先端部の上面は、傾斜面３４よ
り高くしてコロ２８が転落しないようにする。Further, on the upper surface 26 of the protrusion 20, FIG.
As in (2), the inclined surface 34 is formed in which the tip end side of the protrusion 20 which is the inner side in the radial direction of the silicon wafer 22 is lower than the base end side which is the outer side in the radial direction of the silicon wafer 22.
The rollers 28 may be arranged on the inclined surface 34. Even in this case, the same effect as the concave curved surface 32 can be obtained. The top surface of the tip of the protrusion 20 is higher than the inclined surface 34 so that the rollers 28 do not fall.
【００１９】図３は、本発明の第２実施形態を示したも
のである。この第２実施形態は、各支柱１４に形成した
突部２０の上面２６に円板状の棚板からなるサセプタ２
４が配置してあって、このサセプタ２４がシリコンウエ
ハ２２を支持するウエハ支持部となっている。そして、
サセプタ２４の上面に複数（３つ以上）のコロ２８が配
置してあり、これらのコロ２８の上にシリコンウエハ２
２が乗せてある。各コロ２８は、シリコンウエハ２２の
半径をｒとすると、中心からほぼ０．５〜０．９ｒの円
周上に配置してある。特に、中心からほぼ０．７ｒの円
周上に配置した場合には、シリコンウエハ２２のコロ２
８より内側の部分と外側の部分との面積がほぼ同じとな
り、コロ２８より内側と外側とで重量がバランスし、シ
リコンウエハ２２の熱変形等を非常に小さくすることが
できる。なお、サセプタ２４のコロ２８を配置する面を
図２に示した凹曲面や傾斜面に形成してもよい。FIG. 3 shows a second embodiment of the present invention. In the second embodiment, the susceptor 2 made of a disc-shaped shelf plate is provided on the upper surface 26 of the protrusion 20 formed on each of the columns 14.
4 are arranged, and the susceptor 24 serves as a wafer supporting portion for supporting the silicon wafer 22. And
A plurality of (three or more) rollers 28 are arranged on the upper surface of the susceptor 24, and the silicon wafer 2 is placed on the rollers 28.
2 is on board. Each roller 28 is arranged on the circumference of about 0.5 to 0.9r from the center, where r is the radius of the silicon wafer 22. In particular, when the silicon wafer 22 is arranged on the circumference of about 0.7 r from the center,
The area inside 8 and the area outside are substantially the same, the weight is balanced between the inside and outside of the roller 28, and the thermal deformation of the silicon wafer 22 can be made extremely small. The surface of the susceptor 24 on which the rollers 28 are arranged may be formed into the concave curved surface or the inclined surface shown in FIG.
【００２０】[0020]
【実施例】直径１５０ｍｍのシリコンウエハを１３００
〜１３５０℃で４時間余熱処理を実施した。従来のよう
にサセプタ２４上に直接シリコンウエハ２２を配置した
場合には、シリコンウエハの２ヵ所以上で長さ３ｃｍ以
上のスリップが多数発生した。これに対して、シリコン
ウエハ２２の中心から約０．７ｒの円周上の３ヵ所（シ
リコンウエハ２２の中心に対して約１２０度間隔）に配
置した場合には、スリップの発生はなかった。コロの配
置位置をシリコンウエハの約０．５ｒまたは０．９ｒと
しても同様の結果を得た。[Example] A silicon wafer having a diameter of 150 mm was set to 1300.
A residual heat treatment was carried out at ˜1350 ° C. for 4 hours. When the silicon wafer 22 was directly placed on the susceptor 24 as in the conventional case, many slips having a length of 3 cm or more occurred at two or more places of the silicon wafer. On the other hand, in the case of arranging at three places on the circumference of about 0.7r from the center of the silicon wafer 22 (interval of about 120 degrees with respect to the center of the silicon wafer 22), no slip occurred. Similar results were obtained even when the position of the roller was set to about 0.5r or 0.9r on the silicon wafer.
【００２１】図４（３）に示したように、サセプタ２４
によって直接シリコンウエハ２２を支持したときのスリ
ップの発生状態と、図３に示した第２実施形態のコロ２
８を介してシリコンウエハ２２を支持したときのスリッ
プの発生状態とを比較したところ、従来のサセプタ２４
によってシリコンウエハ２２を直接支持した場合、熱処
理を４５回（４５日）以上した後でないと、シリコンウ
エハを熱処理したときにスリップが発生して使いものに
ならなかった。しかも、４５回以上熱処理したサセプタ
２４であっても、そのサセプタを酸洗浄するとサセプタ
の表面状態が元に戻り、再び４５回以上熱処理をした後
でないとシリコンウエハ２２のスリップの発生をなくす
ことができなかった。これに対して、第２実施形態のよ
うにコロ２８を介してシリコンウエハ２２を支持した場
合、最初からスリップの発生が見られなかった。従っ
て、段取時間を従来の４５日から１日に大幅に短縮する
ことができた。As shown in FIG. 4C, the susceptor 24
The state of occurrence of slip when the silicon wafer 22 is directly supported by the roller 2 of the second embodiment shown in FIG.
8 is compared with the state of occurrence of slip when the silicon wafer 22 is supported through the conventional susceptor 24.
When the silicon wafer 22 was directly supported by, the heat treatment was performed 45 times (45 days) or more, and slippage occurred when the silicon wafer was heat-treated, which was unusable. Moreover, even if the susceptor 24 is heat-treated 45 times or more, the surface state of the susceptor is restored by acid cleaning the susceptor, and the occurrence of slippage of the silicon wafer 22 can be eliminated only after heat-treating the susceptor 45 times or more. could not. On the other hand, when the silicon wafer 22 was supported via the rollers 28 as in the second embodiment, no slip was observed from the beginning. Therefore, the setup time could be greatly reduced from the conventional 45 days to one day.
【００２２】[0022]
【発明の効果】以上に説明したように、本発明によれ
ば、半導体ウエハを移動体を介して支持したことによ
り、半導体ウエハを高温処理する際に半導体ウエハが熱
膨張すると、半導体ウエハと接触している移動体がウエ
ハの熱膨張に伴ってウエハ支持部の面上を移動するた
め、接触部の熱膨張に対する自由度が増大して容易に熱
膨張し、半導体ウエハに作用する力が大幅に減少し熱膨
張による変形などが防止でき、内部応力を小さくなって
スリップの発生を防止することができる。As described above, according to the present invention, by supporting the semiconductor wafer through the moving body, when the semiconductor wafer is thermally expanded during high temperature processing, the semiconductor wafer comes into contact with the semiconductor wafer. Since the moving body moves on the surface of the wafer supporting portion in accordance with the thermal expansion of the wafer, the degree of freedom of thermal expansion of the contact portion increases and the thermal expansion easily occurs, and the force acting on the semiconductor wafer is greatly increased. Therefore, deformation due to thermal expansion can be prevented, internal stress can be reduced, and slippage can be prevented.
【００２３】そして、移動体としてＳｉＣ薄膜からなる
中空コロを用いると、小型軽量で高温での熱変形も小さ
く、また熱容量が小さい移動体が得られ、容易に転動す
るとともに半導体ウエハに与える熱的影響も少なく、半
導体ウエハの熱膨張に伴う変形や熱分布が小さくなり、
スリップの発生をより確実に防止することができる。ま
た、移動体を配置するウエハ支持部の面を凹曲面や傾斜
面とすると、移動体がウエハ支持部から転落するのを防
止することができるばかりでなく、移動体の配置位置が
一定となり、半導体ウエハの支持位置が一定となって品
質を安定させることができる。そして、半導体ウエハの
中心から、半導体ウエハの半径のほぼ７０％に相当する
円周上に複数の移動体を配置すると、半導体ウエハの移
動体より内側の面積と外側の面積とがほぼ等しく、移動
体の両側の半導体ウエハの重量がほぼ等しくなって、半
導体ウエハの熱変形などをより小さくすることができ、
このためスリップの発生をより効果的に防止できる。When a hollow roller made of a SiC thin film is used as the moving body, a moving body having a small size and light weight, a small thermal deformation at a high temperature, and a small heat capacity can be obtained, which easily rolls and gives heat to the semiconductor wafer. Is less affected by heat, the deformation and heat distribution due to the thermal expansion of the semiconductor wafer is reduced,
It is possible to more reliably prevent the occurrence of slip. Further, if the surface of the wafer support portion on which the moving body is arranged is a concave curved surface or an inclined surface, not only can the moving body be prevented from falling off the wafer support portion, but also the arrangement position of the moving body becomes constant, The supporting position of the semiconductor wafer becomes constant and the quality can be stabilized. Then, when a plurality of moving bodies are arranged on the circumference corresponding to approximately 70% of the radius of the semiconductor wafer from the center of the semiconductor wafer, the area inside the moving body of the semiconductor wafer and the area outside the moving body are substantially equal to each other. Since the weight of the semiconductor wafers on both sides of the body is almost equal, the thermal deformation of the semiconductor wafer can be further reduced,
Therefore, the occurrence of slip can be prevented more effectively.
【図１】本発明の第１実施形態に係るウエハ支持構造と
移動体との説明図である。FIG. 1 is an explanatory diagram of a wafer support structure and a moving body according to a first embodiment of the present invention.
【図２】ウエハ支持部の移動体を配置する面の他の実施
形態の説明図である。FIG. 2 is an explanatory diagram of another embodiment of a surface of a wafer support portion on which a moving body is arranged.
【図３】本発明の第２実施形態の説明図である。FIG. 3 is an explanatory diagram of a second embodiment of the present invention.
【図４】縦型ウエハボートの斜視図と従来のウエハ支持
構造の説明図である。FIG. 4 is a perspective view of a vertical wafer boat and an explanatory view of a conventional wafer support structure.
１０ 縦型ウエハボート １２ ベース １４ 支柱 ２０、２４ ウエハ支持部（突部、サセプタ） ２２ 半導体ウエハ（シリコンウエハ） ２８、３０ 移動体（コロ、球体） ３２ 凹状曲面 ３４ 傾斜面 10 Vertical Wafer Boat 12 Base 14 Support 20, 20 Wafer Support (Protrusion, Susceptor) 22 Semiconductor Wafer (Silicon Wafer) 28, 30 Moving Body (Roll, Sphere) 32 Concave Curved Surface 34 Slope
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中嶋 定夫 東京都武蔵野市吉祥寺本町１−14−５ エ ヌティティ エレクトロニクス テクノロ ジー株式会社内 (72)発明者 片山 達彦 神奈川県平塚市四之宮2612 コマツ電子金 属株式会社内 (72)発明者 河原 史朋 岡山県玉野市玉三丁目１番１号 三造メタ ル株式会社内 (72)発明者 斎藤 誠 東京都中央区築地５丁目６番４号 三造メ タル株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Sadao Nakajima 1-14-5 Kichijojihonmachi, Musashino-shi, Tokyo Entiti Electronics Technology Corp. (72) Inventor Tatsuhiko Katayama 2612 Shinnomiya, Hiratsuka-shi, Kanagawa Co., Ltd. (72) Inventor, Fumio Kawahara, 1-1, Tamama, Tamano-shi, Okayama Sanzo Metal Co., Ltd. (72) Inventor, Makoto Saito, 5-6-4, Tsukiji, Chuo-ku, Tokyo Sanzo-Me Within Tal Corporation
Claims (5)
ウエハを支持する縦型ウエハボートのウエハ支持構造に
おいて、前記ウエハボートのウエハ支持部に、前記半導
体ウエハの半径方向に移動可能な移動体を配置し、この
移動体を介して前記半導体ウエハを支持することを特徴
とする縦型ウエハボートのウエハ支持構造。1. In a wafer supporting structure of a vertical wafer boat for supporting a semiconductor wafer by a support pillar standing on a base, a movable body movable in a radial direction of the semiconductor wafer is provided at a wafer supporting portion of the wafer boat. A wafer support structure for a vertical wafer boat, wherein the wafer support structure is arranged and supports the semiconductor wafer through the moving body.
した中空のコロであることを特徴とする請求項１に記載
の縦型ウエハボートのウエハ支持構造。2. The wafer support structure for a vertical wafer boat according to claim 1, wherein the moving body is a hollow roller formed of a SiC thin film.
する面が凹曲面に形成してあることを特徴とする請求項
１または２に記載の縦型ウエハボートのウエハ支持構
造。3. The wafer support structure for a vertical wafer boat according to claim 1, wherein the wafer support portion has a concave curved surface on which the movable body is disposed.
する面を、前記半導体ウエハの半径方向において内側よ
り外側が漸次高くなっている傾斜面に形成してあること
を特徴とする請求項１または２に記載の縦型ウエハボー
トのウエハ支持構造。4. The wafer supporting portion has a surface on which the moving body is arranged, which is an inclined surface in which the outside is gradually higher than the inside in the radial direction of the semiconductor wafer. 3. The wafer support structure for a vertical wafer boat according to 1 or 2.
た円板状棚板であって、前記移動体は、前記棚板上の、
前記半導体ウエハの中心から、半導体ウエハの半径のほ
ぼ５０〜９０％に相当する円周上に複数配置してあるこ
とを特徴とする請求項１ないし４のいずれか１に記載の
縦型ウエハボートのウエハ支持構造。5. The wafer supporting part is a disc-shaped shelf plate held by the support, and the movable body is on the shelf plate.
5. The vertical wafer boat according to claim 1, wherein a plurality of semiconductor wafers are arranged on a circumference corresponding to approximately 50 to 90% of the radius of the semiconductor wafer from the center of the semiconductor wafer. Wafer support structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30495195A JP3328763B2 (en) | 1995-10-30 | 1995-10-30 | Wafer support structure for vertical wafer boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30495195A JP3328763B2 (en) | 1995-10-30 | 1995-10-30 | Wafer support structure for vertical wafer boat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09129567A true JPH09129567A (en) | 1997-05-16 |
| JP3328763B2 JP3328763B2 (en) | 2002-09-30 |
Family
ID=17939284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30495195A Expired - Fee Related JP3328763B2 (en) | 1995-10-30 | 1995-10-30 | Wafer support structure for vertical wafer boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3328763B2 (en) |
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| JP2008227056A (en) * | 2007-03-12 | 2008-09-25 | Shin Etsu Handotai Co Ltd | Vertical heat treating boat and heat treating method for semiconductor wafer |
| JP2008251919A (en) * | 2007-03-30 | 2008-10-16 | Covalent Materials Corp | Vertical wafer boat |
| KR101130969B1 (en) * | 2009-09-17 | 2012-04-03 | 주성엔지니어링(주) | Supporting member for substrate, and substrate heating apparatus including the supporting member for substrate |
| JP2018011011A (en) * | 2016-07-15 | 2018-01-18 | クアーズテック株式会社 | Vertical wafer boat |
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|---|---|
| JP3328763B2 (en) | 2002-09-30 |
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