JPH09106980A - Coating film forming device and method - Google Patents
Coating film forming device and methodInfo
- Publication number
- JPH09106980A JPH09106980A JP26303495A JP26303495A JPH09106980A JP H09106980 A JPH09106980 A JP H09106980A JP 26303495 A JP26303495 A JP 26303495A JP 26303495 A JP26303495 A JP 26303495A JP H09106980 A JPH09106980 A JP H09106980A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- coating liquid
- peripheral
- coating
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ウエハの表面に塗
布膜を形成する塗布膜形成装置及び塗布膜形成方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating film forming apparatus and a coating film forming method for forming a coating film on the surface of a wafer.
【０００２】[0002]
【従来の技術】ウエハ表面を平坦化するために、有機溶
剤に溶けたガラス溶液（ＳＯＧ液）をウエハ表面に回転
塗布（スピンコート）してＳＯＧ液の薄膜を形成し、こ
の薄膜が形成されたウエハを加熱処理してＳｉＯ2 膜
（ＳＯＧ膜）を形成する技術が広く用いられている。図
３を参照してＳＯＧ膜を形成する従来の技術を説明す
る。2. Description of the Related Art In order to flatten the surface of a wafer, a glass solution (SOG liquid) dissolved in an organic solvent is spin-coated on the surface of the wafer to form a thin film of the SOG liquid. A technique for forming a SiO 2 film (SOG film) by heat-treating the wafer is widely used. A conventional technique for forming an SOG film will be described with reference to FIG.
【０００３】ウエハ保持台１０にウエハ１２を保持して
矢印Ａ方向にウエハ１２を回転させながら、滴下ノズル
１４からウエハ１２の表面中心部にＳＯＧ液を滴下す
る。ＳＯＧ液は遠心力により均一に引き延ばされて薄膜
化し、この薄膜化したＳＯＧ液１６を４００℃前後の温
度で加熱処理して硬化させ、これにより、ウエハ１２の
表面にＳＯＧ膜を形成する。While holding the wafer 12 on the wafer holder 10 and rotating the wafer 12 in the direction of arrow A, the SOG liquid is dropped from the dropping nozzle 14 to the center of the surface of the wafer 12. The SOG liquid is uniformly stretched by a centrifugal force to form a thin film, and the thinned SOG liquid 16 is heat-treated at a temperature of about 400 ° C. to be cured, thereby forming an SOG film on the surface of the wafer 12. .
【０００４】ところが、上記の技術では、図３に示すよ
うに、ＳＯＧ液１６がウエハ１２の周縁部や外周面にも
付着し、これらの部分にもＳＯＧ膜が形成される。この
周縁部や外周面に形成されたＳＯＧ膜は、半導体製造の
後工程で、例えばウエハをウエハキャリアカセットに出
し入れする際に剥がれることがある。このようにして剥
れたＳＯＧ膜はパーティクルの発生原因になるという問
題がある。However, in the above technique, as shown in FIG. 3, the SOG liquid 16 adheres to the peripheral edge and the outer peripheral surface of the wafer 12, and the SOG film is also formed on these portions. The SOG film formed on the peripheral portion and the outer peripheral surface may be peeled off when the wafer is taken in and out of the wafer carrier cassette in a post-process of semiconductor production, for example. There is a problem that the SOG film peeled off in this way causes generation of particles.
【０００５】そこで、図４に示すように、ウエハ１２の
周縁部や外周面にＩＰＡ（イソプロピルアルコール）な
どの有機溶剤（エッジリンス液）１８をノズル２０から
吹き付け、周縁部や外周面に付着している薄膜化された
ＳＯＧ液１６を洗浄除去する技術が知られている（特開
平３−１２７８３４号公報参照）。Therefore, as shown in FIG. 4, an organic solvent (edge rinse liquid) 18 such as IPA (isopropyl alcohol) is sprayed from the nozzle 20 onto the peripheral edge and the outer peripheral surface of the wafer 12 to adhere to the peripheral edge and the outer peripheral surface. A technique for cleaning and removing the thinned SOG liquid 16 is known (see Japanese Patent Laid-Open No. 3-127834).
【０００６】[0006]
【発明が解決しようとする課題】しかし、上記のエッジ
リンス液１８を吹き付ける技術では、エッジリンス後
に、図４に示すように、薄膜化されたＳＯＧ液１６の周
縁部に盛上り部分２２が形成される。この盛上り部分２
２が後工程で剥がれ、パーティクルの発生原因になると
いう問題が新たに生じる。However, in the technique of spraying the edge rinse liquid 18 as described above, after the edge rinse, as shown in FIG. 4, a raised portion 22 is formed on the peripheral portion of the thinned SOG liquid 16. To be done. This rising part 2
2 is peeled off in a subsequent process, which causes a new problem that particles are generated.
【０００７】本発明は、上記事情に鑑み、パーティクル
を発生させない塗布膜形成装置及び塗布膜形成方法を提
供することを目的とする。In view of the above circumstances, it is an object of the present invention to provide a coating film forming apparatus and a coating film forming method which do not generate particles.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
の本発明の塗布膜形成装置は、ウエハ表面に塗布膜を形
成する塗布膜形成装置において、 （１）ウエハの表面を上に向けてこのウエハを保持し回
転させるウエハ保持台 （２）このウエハ保持台に保持されたウエハの表面中心
部に塗布液を滴下する滴下ノズル （３）上記ウエハ保持台の上方に設置され、このウエハ
保持台に保持されたウエハの表面の周縁部に洗浄液を吹
き付けることにより、この表面周縁部に付着している塗
布液を除去する第１のエッジリンス用ノズル （４）上記ウエハ保持台の下方に設置され、このウエハ
保持台に保持されたウエハの裏面の周縁部に洗浄液を吹
き付けることにより、この裏面周縁部に付着している塗
布液を除去する第２のエッジリンス用ノズル （５）上記ウエハ保持台の上方に設置され、このウエハ
保持台に保持されたウエハの表面の周縁部にガスを吹き
付けることにより、ウエハ表面上の塗布液の周縁部を平
坦化するガス用ノズル を備えたことを特徴とするものである。A coating film forming apparatus of the present invention for achieving the above object is a coating film forming apparatus for forming a coating film on a wafer surface. (1) The wafer surface is directed upward. Wafer holder that holds and rotates this wafer (2) Dropping nozzle that drops the coating liquid onto the center of the surface of the wafer held on this wafer holder (3) This wafer holder is installed above the wafer holder A first edge rinse nozzle for removing the coating liquid adhering to the peripheral portion of the surface of the wafer held on the base by spraying the cleaning liquid onto the peripheral portion of the surface. (4) Installed below the wafer holding base The second edge rinse nozzle for removing the coating liquid adhering to the peripheral portion of the back surface of the wafer held on the wafer holding table by spraying the cleaning liquid onto the peripheral portion of the rear surface of the wafer ( ) A gas nozzle is provided above the wafer holder to flatten the peripheral edge of the coating liquid on the wafer surface by blowing gas onto the peripheral edge of the surface of the wafer held on the wafer holder. It is characterized by that.
【０００９】上記目的を達成するための本発明の塗布膜
形成方法は、ウエハ表面に塗布膜を形成する塗布膜形成
方法において、 （６）表面を上に向けて回転しているウエハのこの表面
の中心部に塗布液を滴下することにより、この塗布液の
薄膜を上記ウエハの表面に形成する薄膜形成工程 （７）上記塗布液の薄膜が形成されたウエハの表面の周
縁部及び裏面の周縁部に洗浄液を吹き付けることによ
り、ウエハの周縁部及び外周面に付着している塗布液を
除去する塗布液除去工程 （８）上記周縁部及び外周面に付着している塗布液が除
去されたウエハの表面の周縁部にガスを吹き付けること
により、薄膜の周縁部を平坦化する平坦化工程 を含むことを特徴とするものである。The coating film forming method of the present invention for achieving the above object is a coating film forming method for forming a coating film on a wafer surface, comprising: (6) This surface of a wafer which is rotated with its surface facing upward. Thin film forming step of forming a thin film of the coating liquid on the surface of the wafer by dropping the coating liquid on the central part of the wafer (7) Edge of the front surface and back edge of the wafer on which the thin film of the coating liquid is formed Coating liquid removing step of removing the coating liquid adhering to the peripheral edge portion and the outer peripheral surface of the wafer by spraying the cleaning liquid onto the peripheral portion (8) The wafer from which the coating liquid adhering to the peripheral edge portion and the outer peripheral surface is removed The method is characterized by including a flattening step of flattening the peripheral edge portion of the thin film by blowing gas onto the peripheral edge portion of the surface of the.
【００１０】ここで、上記塗布液除去工程及び上記平坦
化工程に代えて、上記ウエハの表面及び裏面双方の周縁
部に洗浄液を吹き付けると共に上記表面の周縁部にガス
を吹き付けることにより、表面及び裏面双方の周縁部に
付着している塗布液を除去しながら薄膜表面の周縁部を
平坦化する除去平坦化工程を含むことが好ましい。Here, in place of the coating liquid removing step and the flattening step, the cleaning liquid is sprayed on the peripheral portions of both the front surface and the rear surface of the wafer, and a gas is sprayed on the peripheral portions of the front surface, so that the front surface and the rear surface. It is preferable to include a removal flattening step of flattening the peripheral portions of the thin film surface while removing the coating liquid adhering to both peripheral portions.
【００１１】[0011]
【発明の実施の形態】以下、図面を参照して本発明の塗
布膜形成装置の一実施形態を説明する。図１は、本発明
の塗布膜形成装置の一実施形態を示す模式図である。塗
布膜形成装置３０は、図示しないモータ等により矢印Ａ
方向に高速回転される回転軸３２と、回転軸３２の先端
部に固定され、ウエハ３６をその表面を上に向けて保持
するウエハ保持台３４を備えている。また、ウエハ保持
台３４に保持されたウエハ３６の表面中心部３６ａの上
方には、この表面中心部３６ａに塗布液を滴下する滴下
ノズル３８が設置されている。また、ウエハ保持台３４
の上方には、ウエハ３６の表面の周縁部３２ｂに洗浄液
を吹き付けることにより、表面周縁部３６ｂに付着して
いる塗布液を除去する第１のエッジリンス用ノズル４０
が設置されており、一方、ウエハ保持台３４の下方に
は、ウエハ３６の裏面の周縁部３６ｃに洗浄液を吹き付
けることにより、裏面周縁部３６ｃに付着している塗布
液を除去する第２のエッジリンス用ノズル４２が設置さ
れている。第１のエッジリンス用ノズル４０は、その先
端がウエハ３６の表面周縁部３６ｂに向いており、一
方、第２のエッジリンス用ノズル４２は、その先端がウ
エハ３６の裏面周縁部３６ｃに向いている。また、ウエ
ハ保持台３４の上方には、先端がウエハ３６の表面周縁
部３６ｄに向き、この表面周縁部３６ｄにガスを吹き付
けることにより、ウエハ表面上の塗布液の周縁部を平坦
化するガス用ノズル４４が設置されている。さらに、ウ
エハ保持台３４の側部及び下部を覆うように塗布液受け
用カップ４６が設置されており、この塗布液受け用カッ
プ４６によって、高速回転によりウエハ３６の表面から
飛散する塗布液や溶剤が受け止められ、周囲の汚れが防
止される。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the coating film forming apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing an embodiment of the coating film forming apparatus of the present invention. The coating film forming apparatus 30 is operated by an unillustrated motor, etc.
The rotary shaft 32 is rotated at a high speed in a direction, and the wafer holder 34 is fixed to the tip of the rotary shaft 32 and holds the wafer 36 with its surface facing upward. Further, a dropping nozzle 38 for dropping the coating liquid onto the surface center 36a is installed above the surface center 36a of the wafer 36 held on the wafer holder 34. In addition, the wafer holder 34
Above the first edge rinse nozzle 40 for removing the coating liquid adhering to the peripheral portion 36b of the surface by spraying the cleaning liquid onto the peripheral portion 32b of the surface of the wafer 36.
On the other hand, below the wafer holding table 34, the second edge for removing the coating liquid adhering to the back surface peripheral portion 36c by spraying the cleaning liquid on the peripheral portion 36c of the back surface of the wafer 36. A rinse nozzle 42 is installed. The tip of the first edge rinse nozzle 40 faces the front surface peripheral edge 36b of the wafer 36, while the tip of the second edge rinse nozzle 42 faces the rear surface peripheral edge 36c of the wafer 36. There is. In addition, above the wafer holding table 34, the tip is directed toward the surface peripheral edge 36d of the wafer 36, and gas is blown to the surface peripheral edge 36d to flatten the peripheral edge of the coating liquid on the wafer surface. A nozzle 44 is installed. Further, a coating liquid receiving cup 46 is installed so as to cover the side portion and the lower portion of the wafer holding table 34, and the coating liquid and the solvent scattered from the surface of the wafer 36 by high-speed rotation by the coating liquid receiving cup 46. Is received and the surrounding dirt is prevented.
【００１２】図２を参照して、塗布膜形成装置３０を使
用してウエハ表面に塗布膜を形成する本発明の塗布膜形
成方法の一実施形態を説明する。ウエハ保持台３４の上
にウエハ３６を、例えば真空吸着により表面を上に向け
て固定する。図示しないモータ等によって回転軸３２を
矢印Ａ方向に回転させてウエハ保持台３４に固定された
ウエハ３６を、例えば４０００ｒｐｍで高速回転させ
る。ウエハ３６を回転させながら、滴下ノズル３８から
ウエハ３６の表面中心部３６ａに、例えばシリコン化合
物を主成分とする有機ＳＯＧ溶液や無機ＳＯＧ溶液など
の塗布液を滴下する。滴下された塗布液は、約１０秒間
で遠心力により均一に引き延ばされ薄膜化して薄膜４８
が形成される。With reference to FIG. 2, an embodiment of the coating film forming method of the present invention for forming a coating film on the wafer surface using the coating film forming apparatus 30 will be described. The wafer 36 is fixed on the wafer holder 34 with the surface thereof facing upward by, for example, vacuum suction. The rotation shaft 32 is rotated in the direction of arrow A by a motor or the like (not shown) to rotate the wafer 36 fixed to the wafer holder 34 at a high speed, for example, 4000 rpm. While rotating the wafer 36, a coating liquid such as an organic SOG solution or an inorganic SOG solution containing a silicon compound as a main component is dropped from the dropping nozzle 38 to the surface center portion 36a of the wafer 36. The dropped coating solution is uniformly spread by a centrifugal force in about 10 seconds to form a thin film, and the thin film 48
Is formed.
【００１３】次に、ウエハ３６の回転速度を１０００ｒ
ｐｍまで下げて、第１のエッジリンス用ノズル４０と第
２のエッジリンス用ノズル４２を用いて、ウエハ３６の
外周縁から中心方向に３ｍｍまでの周縁部３６ｂ，３６
ｃに、例えばＩＰＡ（イソプロピルアルコール）、エタ
ノール、メタノール、シクロヘキサン等の有機溶剤４０
ａ，４２ａを５秒間吹き付けて、ウエハ３６と外周面の
周縁部の洗浄を行う。このようにして、第１のエッジリ
ンス用ノズル４０と第２のエッジリンス用ノズル４２か
ら有機溶剤をウエハ３６の周縁部３６ｂ，３６ｃに吹き
付けると、図４に示すように薄膜の周縁部に盛上り部分
２２が形成される。そこで、ここでは、ウエハ３６の周
縁部の洗浄を行った後、ガス用ノズル４４からウエハ３
６の周縁部３６ｄにＮ2 ガス（又はエアー）４４ａを吹
き付けて、盛上り部分２２（図４参照）を平らにして薄
膜４８の周縁部を平坦化する。このとき、Ｎ2 ガスの吹
き付ける圧力は３〜６ｋｇ／ｃｍ2 、ノズル角度３０〜
４５°、ノズルとウエハ間の距離を２〜５ｍｍとするの
が適切である。Next, the rotation speed of the wafer 36 is set to 1000 r.
pm, and using the first edge rinse nozzle 40 and the second edge rinse nozzle 42, the peripheral edge portions 36b, 36 extending from the outer peripheral edge of the wafer 36 to the center direction up to 3 mm.
c is an organic solvent 40 such as IPA (isopropyl alcohol), ethanol, methanol or cyclohexane.
The wafers 36 and 42a are sprayed for 5 seconds to clean the wafer 36 and the peripheral portion of the outer peripheral surface. In this manner, when the organic solvent is sprayed from the first edge rinse nozzle 40 and the second edge rinse nozzle 42 onto the peripheral edge portions 36b and 36c of the wafer 36, as shown in FIG. The ascending portion 22 is formed. Therefore, here, after cleaning the peripheral portion of the wafer 36, the wafer 3 is removed from the gas nozzle 44.
N 2 gas (or air) 44 a is blown onto the peripheral edge 36 d of No. 6 to flatten the raised portion 22 (see FIG. 4) to flatten the peripheral edge of the thin film 48. At this time, the N 2 gas spraying pressure is 3 to 6 kg / cm 2 , and the nozzle angle is 30 to
It is appropriate that the angle between the nozzle and the wafer is 45 ° and the distance between the wafer and the wafer is 2 to 5 mm.
【００１４】またノズルの先端の位置はウエハ周縁から
内側に５ｍｍ付近、すなわちエッジリンスによるＳＯＧ
の盛り上り部分２２よりもやや内側に位置するのが本発
明の目的を達成するのに好ましい。ウエハ間の距離を２
〜５ｍｍとするのは、これ以上ノズルをウエハから離せ
ば、Ｎ2 ガスが発散し、盛り上り部分２２が除去できな
くなるからであり、圧力を３〜６ｋｇ／ｃｍ2 とするの
は３ｋｇ／ｃｍ2 以下では除去する風圧がなくなるから
であり、６ｋｇ／ｃｍ2 以上では風圧が強過ぎ、ＳＯＧ
膜を基準厚さよりも、寧ろ薄くしてしまうからである。
また、ノズル角度３０〜４５°とするのは盛り上り部分
２２の除去に最も効率的だからである。尚、有機溶剤４
０ａ，４２ａの吹き付けと、Ｎ2 ガスの４４ａの吹き付
けとを同時に行ってもよく、この場合は、盛上り部分２
２がほとんど形成されることなく薄膜４８の周縁部を平
坦化できる。The position of the tip of the nozzle is about 5 mm inward from the wafer edge, that is, SOG by edge rinse.
It is preferable to be located slightly inside the raised portion 22 in order to achieve the object of the present invention. Distance between wafers is 2
The reason why the pressure is 3 to 5 mm is that if the nozzle is further separated from the wafer, the N 2 gas will diverge and the raised portion 22 cannot be removed. The pressure is 3 to 6 kg / cm 2 and is 3 kg / cm. This is because the wind pressure to be removed becomes less at 2 or less, and the wind pressure becomes too strong at 6 kg / cm 2 or more, resulting in SOG.
This is because the film is made thinner than the standard thickness.
Further, the reason why the nozzle angle is 30 to 45 ° is that the removal of the raised portion 22 is most efficient. In addition, organic solvent 4
The spraying of 0a and 42a and the spraying of N 2 gas 44a may be performed simultaneously. In this case, the rising portion 2
The peripheral portion of the thin film 48 can be flattened with almost no 2 formed.
【００１５】このようにして、平坦な薄膜が表面に形成
されたウエハ３６を４００℃の温度で加熱処理すること
によりウエハ３６の表面に平坦なＳＯＧ膜を形成でき、
後工程において、塗布膜に起因するパーティクルの発生
が防止される。尚、ここではＳＯＧ膜を例にとり説明し
たが、本発明の塗布膜形成方法はポリイミド系の樹脂膜
の形成にも適用される。In this way, a flat SOG film can be formed on the surface of the wafer 36 by heating the wafer 36 having the flat thin film formed on the surface thereof at a temperature of 400 ° C.
In the subsequent step, generation of particles due to the coating film is prevented. Although the SOG film has been described as an example here, the coating film forming method of the present invention is also applicable to the formation of a polyimide resin film.
【００１６】[0016]
【発明の効果】以上説明したように本発明の塗布膜形成
装置によれば、第１のエッジリンス用ノズルと第２のエ
ッジリンス用ノズルを用いて、ウエハの周縁部や外周面
に付着している塗布液を除去できるだけでなく、ガス用
ノズルを用いてウエハ表面上の塗布液の周縁部を平坦化
できるので、後工程において、塗布膜に起因するパーテ
ィクルの発生が防止される。この結果、製品の歩留りや
信頼性を向上させることができる。As described above, according to the coating film forming apparatus of the present invention, the first edge rinse nozzle and the second edge rinse nozzle are used to adhere to the peripheral edge and the outer peripheral surface of the wafer. Not only can the coating liquid being removed be removed, but the peripheral portion of the coating liquid on the wafer surface can be flattened using the gas nozzle, so that the generation of particles due to the coating film can be prevented in the subsequent step. As a result, the yield and reliability of products can be improved.
【００１７】また、本発明の塗布膜形成方法によれば、
ウエハ表面の周縁部とウエハ裏面の周縁部に洗浄液を吹
き付けて周縁部や外周面に付着している塗布液を除去
し、さらに、ウエハ表面の周縁部にガスを吹き付けて薄
膜の周縁部を平坦化するので、後工程において、塗布膜
に起因するパーティクルの発生が防止される。この結
果、製品の歩留りや信頼性を向上させることができる。According to the coating film forming method of the present invention,
The cleaning liquid is sprayed onto the peripheral portion of the wafer front surface and the peripheral portion of the wafer back surface to remove the coating liquid adhering to the peripheral portion and the peripheral surface, and further gas is sprayed onto the peripheral portion of the wafer surface to flatten the peripheral portion of the thin film. Therefore, generation of particles due to the coating film is prevented in the subsequent step. As a result, the yield and reliability of products can be improved.
【００１８】ここで、塗布液除去工程及び平坦化工程に
代えて、ウエハの表面及び裏面双方の周縁部に洗浄液を
吹き付けると共に表面周縁部にガスを吹き付けることに
より、表面及び裏面双方の周縁部に付着している塗布液
を除去しながら薄膜表面の周縁部を平坦化する場合は、
塗布液除去工程及び平坦化工程を採用する場合に比べ短
い時間で塗布膜を形成できる。Here, instead of the coating liquid removing step and the flattening step, the cleaning liquid is sprayed on the peripheral portions of both the front surface and the back surface of the wafer, and the gas is sprayed on the peripheral portions of the front surface of the wafer. When flattening the peripheral edge of the thin film surface while removing the applied coating liquid,
The coating film can be formed in a shorter time than when the coating liquid removing step and the flattening step are adopted.
【図１】本発明の塗布膜形成装置の一実施形態を示す模
式図である。FIG. 1 is a schematic view showing an embodiment of a coating film forming apparatus of the present invention.
【図２】本発明の塗布膜形成方法の一実施形態を示す模
式図である。FIG. 2 is a schematic view showing an embodiment of a coating film forming method of the present invention.
【図３】従来の塗布膜形成方法を示す模式図である。FIG. 3 is a schematic view showing a conventional coating film forming method.
【図４】従来の他の塗布膜形成方法を示す模式図であ
る。FIG. 4 is a schematic view showing another conventional coating film forming method.
３０ 塗布膜形成装置 ３４ ウエハ保持台 ３６ ウエハ ３６ａ 表面中心部 ３６ｂ，３６ｄ 表面周縁部 ３６ｃ 裏面周縁部 ３８ 滴下ノズル ４０ 第１のエッジリンス用ノズル ４２ 第２のエッジリンス用ノズル ４４ ガス用ノズル 30 coating film forming apparatus 34 wafer holder 36 wafer 36a front surface center portion 36b, 36d front surface peripheral portion 36c rear surface peripheral portion 38 dropping nozzle 40 first edge rinse nozzle 42 second edge rinse nozzle 44 gas nozzle
Claims (3)
成装置において、 ウエハの表面を上に向けて該ウエハを保持し回転させる
ウエハ保持台と、 該ウエハ保持台に保持されたウエハの表面中心部に塗布
液を滴下する滴下ノズルと、 前記ウエハ保持台の上方に設置され、該ウエハ保持台に
保持されたウエハの表面の周縁部に洗浄液を吹き付ける
ことにより、該表面周縁部に付着している塗布液を除去
する第１のエッジリンス用ノズルと、 前記ウエハ保持台の下方に設置され、該ウエハ保持台に
保持されたウエハの裏面の周縁部に洗浄液を吹き付ける
ことにより、該裏面周縁部に付着している塗布液を除去
する第２のエッジリンス用ノズルと、 前記ウエハ保持台の上方に設置され、該ウエハ保持台に
保持されたウエハの表面の周縁部にガスを吹き付けるこ
とにより、ウエハ表面上の塗布液の周縁部を平坦化する
ガス用ノズルとを備えたことを特徴とする塗布膜形成装
置。1. A coating film forming apparatus for forming a coating film on a wafer surface, comprising: a wafer holding table for holding and rotating the wafer with the surface of the wafer facing upward; and a surface of the wafer held on the wafer holding table. A dropping nozzle for dropping the coating liquid to the center portion, and a cleaning liquid which is installed above the wafer holding table and is sprayed onto the peripheral edge portion of the surface of the wafer held on the wafer holding table to attach the coating liquid to the peripheral edge portion of the surface. A first edge rinse nozzle for removing the coating liquid, and a peripheral edge of the back surface of the wafer, which is installed below the wafer holder and is sprayed with a cleaning liquid on the peripheral portion of the back surface of the wafer held by the wafer holder. A second edge rinse nozzle that removes the coating liquid adhering to the wafer, and a gas that is installed above the wafer holder and is provided on the peripheral portion of the surface of the wafer held by the wafer holder. By attaching come, coating film forming apparatus characterized by comprising a gas nozzle to flatten the peripheral portion of the coating liquid on the wafer surface.
成方法において、 表面を上に向けて回転しているウエハの該表面の中心部
に塗布液を滴下することにより、該塗布液の薄膜を前記
ウエハの表面に形成する薄膜形成工程と、 前記塗布液の薄膜が形成されたウエハの表面の周縁部及
び裏面の周縁部に洗浄液を吹き付けることにより、ウエ
ハの周縁部及び外周面に付着している塗布液を除去する
塗布液除去工程と、 前記周縁部及び前記外周面に付着している塗布液が除去
されたウエハの表面の周縁部にガスを吹き付けることに
より、薄膜の周縁部を平坦化する平坦化工程とを含むこ
とを特徴とする塗布膜形成方法。2. A method for forming a coating film on a surface of a wafer, wherein a thin film of the coating liquid is obtained by dropping the coating liquid onto the center of the surface of a wafer which is rotating with the surface facing upward. A thin film forming step of forming a thin film of the coating liquid on the front surface of the wafer, and spraying the cleaning liquid onto the peripheral portion of the front surface and the rear surface of the wafer on which the thin film of the coating liquid is formed, thereby adhering to the peripheral portion and the outer peripheral surface of the wafer. The coating liquid removing step of removing the coating liquid being applied, and the peripheral portion of the thin film is flattened by blowing a gas onto the peripheral portion of the surface of the wafer from which the coating liquid adhering to the peripheral portion and the outer peripheral surface has been removed. And a flattening step of forming the coating film.
に代えて、 前記ウエハの表面及び裏面双方の周縁部に洗浄液を吹き
付けると共に前記表面の周縁部にガスを吹き付けること
により、表面及び裏面双方の周縁部に付着している塗布
液を除去しながら薄膜表面の周縁部を平坦化する除去平
坦化工程を含むことを特徴とする請求項２記載の塗布膜
形成方法。3. Instead of the coating liquid removing step and the flattening step, a cleaning liquid is sprayed on the peripheral portions of both the front surface and the back surface of the wafer, and a gas is sprayed on the peripheral portions of the front surface, so that both the front surface and the rear surface of the wafer are sprayed. 3. The coating film forming method according to claim 2, further comprising a removal flattening step of flattening the peripheral edge portion of the thin film surface while removing the coating liquid adhering to the peripheral edge portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26303495A JPH09106980A (en) | 1995-10-11 | 1995-10-11 | Coating film forming device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26303495A JPH09106980A (en) | 1995-10-11 | 1995-10-11 | Coating film forming device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09106980A true JPH09106980A (en) | 1997-04-22 |
Family
ID=17383962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26303495A Withdrawn JPH09106980A (en) | 1995-10-11 | 1995-10-11 | Coating film forming device and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09106980A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980087206A (en) * | 1997-05-23 | 1998-12-05 | 프란쯔 숨니취 | Apparatus for the processing of wafer-shaped articles, in particular silicon wafers |
| JP2002343704A (en) * | 2001-05-17 | 2002-11-29 | Nec Corp | Method and system for forming coating film |
| KR100542299B1 (en) * | 1998-04-23 | 2006-04-14 | 비오이 하이디스 테크놀로지 주식회사 | Edge removal device of photoresist |
| JP2007123460A (en) * | 2005-10-27 | 2007-05-17 | Tokyo Electron Ltd | Method of depositing application film and its apparatus |
| JP2007134671A (en) * | 2005-10-11 | 2007-05-31 | Tokyo Electron Ltd | Method and apparatus for processing substrate |
| CN103464350A (en) * | 2012-06-06 | 2013-12-25 | 勇豪兴业有限公司 | Shell spraying method |
| WO2016152308A1 (en) * | 2015-03-25 | 2016-09-29 | 株式会社Ｓｃｒｅｅｎホールディングス | Coating method |
| JP2017092445A (en) * | 2015-11-11 | 2017-05-25 | 東京エレクトロン株式会社 | Coating film removing device, coating film removing method, and storage medium |
| US10144033B2 (en) | 2015-09-01 | 2018-12-04 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
| CN111359791A (en) * | 2018-12-26 | 2020-07-03 | 中冶京诚工程技术有限公司 | Thick edge reduction purging device and powder electrostatic spraying device |
-
1995
- 1995-10-11 JP JP26303495A patent/JPH09106980A/en not_active Withdrawn
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980087206A (en) * | 1997-05-23 | 1998-12-05 | 프란쯔 숨니취 | Apparatus for the processing of wafer-shaped articles, in particular silicon wafers |
| KR100542299B1 (en) * | 1998-04-23 | 2006-04-14 | 비오이 하이디스 테크놀로지 주식회사 | Edge removal device of photoresist |
| JP2002343704A (en) * | 2001-05-17 | 2002-11-29 | Nec Corp | Method and system for forming coating film |
| JP2007134671A (en) * | 2005-10-11 | 2007-05-31 | Tokyo Electron Ltd | Method and apparatus for processing substrate |
| US7976896B2 (en) | 2005-10-11 | 2011-07-12 | Tokyo Electron Limited | Method of processing a substrate and apparatus processing the same |
| JP2007123460A (en) * | 2005-10-27 | 2007-05-17 | Tokyo Electron Ltd | Method of depositing application film and its apparatus |
| CN103464350A (en) * | 2012-06-06 | 2013-12-25 | 勇豪兴业有限公司 | Shell spraying method |
| WO2016152308A1 (en) * | 2015-03-25 | 2016-09-29 | 株式会社Ｓｃｒｅｅｎホールディングス | Coating method |
| JP2016182531A (en) * | 2015-03-25 | 2016-10-20 | 株式会社Ｓｃｒｅｅｎホールディングス | Coating method |
| KR20170109024A (en) | 2015-03-25 | 2017-09-27 | 가부시키가이샤 스크린 홀딩스 | Application method |
| US10569297B2 (en) | 2015-03-25 | 2020-02-25 | SCREEN Holdings Co., Ltd. | Coating method |
| US10144033B2 (en) | 2015-09-01 | 2018-12-04 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
| JP2017092445A (en) * | 2015-11-11 | 2017-05-25 | 東京エレクトロン株式会社 | Coating film removing device, coating film removing method, and storage medium |
| CN111359791A (en) * | 2018-12-26 | 2020-07-03 | 中冶京诚工程技术有限公司 | Thick edge reduction purging device and powder electrostatic spraying device |
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