JPH09105726A - Measuring device for x-ray reflectance and measuring method for x-ray reflectance - Google Patents
Measuring device for x-ray reflectance and measuring method for x-ray reflectanceInfo
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- JPH09105726A JPH09105726A JP7265179A JP26517995A JPH09105726A JP H09105726 A JPH09105726 A JP H09105726A JP 7265179 A JP7265179 A JP 7265179A JP 26517995 A JP26517995 A JP 26517995A JP H09105726 A JPH09105726 A JP H09105726A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＸ線反射率測定装置
及びＸ線反射率測定方法に関するものであり、特に、試
料表面へのＸ線の入射角の変化に対するＸ線反射率の変
化から、薄膜材料の物理的な性質を評価するためのＸ線
反射率測定装置及びＸ線反射率測定方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray reflectance measuring device and an X-ray reflectance measuring method, and in particular, from the change of the X-ray reflectance with respect to the change of the incident angle of X-rays on the sample surface, The present invention relates to an X-ray reflectance measuring device and an X-ray reflectance measuring method for evaluating physical properties of thin film materials.
【０００２】[0002]
【従来の技術】従来、Ｘ線反射率法は、半導体装置等の
種々の薄膜を堆積させた多層構造を有している試料の表
面構造の評価に有効な方法として用いられており、この
様な半導体装置等における極めて薄い薄膜の評価や積層
界面の平坦性などの積層膜の詳細な評価を行うために
は、広い範囲のＸ線入射角に対応する情報を得ることが
必要になる。2. Description of the Related Art Conventionally, the X-ray reflectance method has been used as an effective method for evaluating the surface structure of a sample having a multilayer structure in which various thin films such as semiconductor devices are deposited. In order to evaluate an extremely thin thin film in a semiconductor device or the like and to perform a detailed evaluation of a laminated film such as flatness of a laminated interface, it is necessary to obtain information corresponding to a wide range of X-ray incident angles.
【０００３】このＸ線反射率法は、反射Ｘ線強度プロフ
ァイルの試料へのＸ線入射角依存性を、シミュレーショ
ン結果と合わせることによって物性を評価する手法であ
り、例えば、薄膜／基板界面の平坦な試料については、
反射Ｘ線強度は理論的には試料へのＸ線入射角の４乗に
逆比例して減衰し、薄膜／基板界面が平坦でない場合に
はさらに急激に減衰する。This X-ray reflectivity method is a method for evaluating the physical properties by combining the dependence of the reflected X-ray intensity profile on the X-ray incident angle on the sample with the simulation results, and for example, the flatness of the thin film / substrate interface. For samples,
The reflected X-ray intensity theoretically attenuates in inverse proportion to the fourth power of the X-ray incident angle on the sample, and more rapidly when the thin film / substrate interface is not flat.
【０００４】この場合、精度の高い解析を行うために
は、出来るだけ広いＸ線入射角の範囲で測定を行う必要
があり、したがって、広い範囲にわたる反射Ｘ線強度の
測定・検出が要求されることになる。In this case, in order to perform highly accurate analysis, it is necessary to perform measurement in a wide range of X-ray incident angle as much as possible. Therefore, measurement / detection of reflected X-ray intensity over a wide range is required. It will be.
【０００５】従来の、Ｘ線反射率測定装置においては、
Ｘ線検出器が正しく検出できるＸ線強度の限界で測定強
度の限界が決まり、この測定限界により測定可能なＸ線
入射角が制限されていた。In the conventional X-ray reflectance measuring device,
The limit of the measurement intensity is determined by the limit of the X-ray intensity that can be correctly detected by the X-ray detector, and the measurable X-ray incident angle is limited by this measurement limit.
【０００６】この様子を図６を参照して説明する。 図６参照 従来のＸ線反射率測定装置は、回転対陰極等のＸ線源１
１、スリット１２、チャネルカット結晶１３、スリット
１４、入射Ｘ線強度モニター１５、ゴニオメーター１
７、スリット１８、及び、Ｘ線検出器１９から概略的に
構成されており、Ｘ線源１１からのＸ線はスリット１
２、チャネルカット結晶１３、及び、スリット１４を介
して単色化、平行化と減衰・整形したのち入射Ｘ線強度
モニター１５を介してゴニオメーター１７上に載置した
被測定試料１６に所定のＸ線入射角２２で入射する。This situation will be described with reference to FIG. See FIG. 6. The conventional X-ray reflectivity measuring apparatus uses an X-ray source 1 such as a rotating anticathode.
1, slit 12, channel cut crystal 13, slit 14, incident X-ray intensity monitor 15, goniometer 1
7, the slit 18, and the X-ray detector 19 are roughly configured, and the X-ray from the X-ray source 11 is the slit 1
2. Through the channel-cut crystal 13 and the slit 14, monochromatization, collimation, attenuation and shaping are performed, and then a predetermined X-ray is applied to the measured sample 16 mounted on the goniometer 17 via the incident X-ray intensity monitor 15. It is incident at a line incident angle of 22.
【０００７】この入射Ｘ線２０は被測定試料１６の表面
構造に応じた反射率で反射され、この反射Ｘ線２１がス
リット１８を介してＸ線検出器１９で検出されることに
なり、この場合、ゴニオメーター１７により被測定試料
１６の入射Ｘ線２０に対する角度（ゴニオメーターの回
転角）を変化させながら測定を行うことになる。なお、
符号２３は、Ｘ線検出器１９の仰角である。The incident X-ray 20 is reflected at a reflectance corresponding to the surface structure of the sample 16 to be measured, and the reflected X-ray 21 is detected by the X-ray detector 19 via the slit 18. In this case, the measurement is performed while changing the angle (rotation angle of the goniometer) of the sample 16 to be measured with respect to the incident X-ray 20 by the goniometer 17. In addition,
Reference numeral 23 is the elevation angle of the X-ray detector 19.
【０００８】[0008]
【発明が解決しようとする課題】しかし、この様なＸ線
反射率測定装置及び測定方法において、Ｘ線強度が測定
限界を越えないようにするためのＸ線強度の調整方法
は、Ｘ線源１１自体の強度を調整するか、或いは、スリ
ット１２，１４，１８によりＸ線を減衰させるかであ
り、このＸ線強度の調整方法では比較的狭いＸ線入射角
範囲での測定しか行うことができず、Ｘ線反射率プロフ
ァイルが緩やかに変化する極めて薄い薄膜の評価や、Ｘ
線入射角２２の大きな領域の情報を必要とする多層膜の
界面の平坦性等を評価しようとする場合、解析に耐える
だけの精度を持ったデータを得ることは困難であった。However, in such an X-ray reflectance measuring apparatus and measuring method, an X-ray intensity adjusting method for preventing the X-ray intensity from exceeding the measurement limit is an X-ray source. The intensity of 11 itself is adjusted, or the X-rays are attenuated by the slits 12, 14, and 18. With this X-ray intensity adjustment method, measurement can only be performed in a relatively narrow X-ray incident angle range. It is not possible to evaluate extremely thin thin films whose X-ray reflectance profile changes gently, and
When attempting to evaluate the flatness of the interface of a multilayer film that requires information on a large area of the line incident angle 22, it was difficult to obtain data with sufficient accuracy to withstand the analysis.
【０００９】したがって、本発明は、Ｘ線入射角２２の
より広い範囲に渡って精度の高いＸ線反射率の測定を行
うことの出来るＸ線反射率測定装置及び測定方法を提供
することを目的とする。Therefore, it is an object of the present invention to provide an X-ray reflectivity measuring apparatus and a measuring method capable of highly accurately measuring the X-ray reflectivity over a wider range of the X-ray incident angle 22. And
【００１０】[0010]
【課題を解決するための手段】図１は本発明の原理的構
成の説明図であり、この図１を参照して本発明における
課題を解決するための手段を説明する。 図１参照 （１）本発明は、Ｘ線反射率測定装置において、Ｘ線源
１とＸ線検出器６との間のＸ線通路７，８に、Ｘ線吸収
体２を設けたことを特徴とする。FIG. 1 is an explanatory view of the principle configuration of the present invention, and means for solving the problems in the present invention will be described with reference to FIG. See FIG. 1 (1) In the X-ray reflectance measuring apparatus according to the present invention, the X-ray absorber 2 is provided in the X-ray passages 7 and 8 between the X-ray source 1 and the X-ray detector 6. Characterize.
【００１１】この様に、Ｘ線源１とＸ線検出器６との間
のＸ線通路７，８に、Ｘ線吸収体２を設けることによっ
て、反射Ｘ線強度がＸ線検出器６の測定限界以上の強度
の場合にも、入射Ｘ線を吸収・減衰することによって反
射Ｘ線強度がＸ線検出器６の測定範囲内に収まるように
することができ、従って、広範囲のＸ線入射角における
精度の高い測定が可能になる。As described above, by providing the X-ray absorber 2 in the X-ray passages 7 and 8 between the X-ray source 1 and the X-ray detector 6, the reflected X-ray intensity of the X-ray detector 6 is reduced. Even when the intensity is higher than the measurement limit, the reflected X-ray intensity can be kept within the measurement range of the X-ray detector 6 by absorbing and attenuating the incident X-ray, and therefore, the X-ray incidence over a wide range. Highly accurate measurement at corners is possible.
【００１２】（２）また、本発明は、上記（１）におい
て、Ｘ線吸収体２を反射Ｘ線の強度に応じて交換する手
段を設けたことを特徴とする。(2) Further, the present invention is characterized in that, in the above (1), a means for replacing the X-ray absorber 2 according to the intensity of the reflected X-rays is provided.
【００１３】この場合には、測定過程で設定した反射Ｘ
線強度上限を越えた場合、或いは、設定した反射Ｘ線強
度下限を下回った場合に、Ｘ線吸収体２を交換すること
によって、Ｘ線検出器６を破壊することなく、且つ、広
範囲のＸ線入射角における精度の高い測定が可能にな
る。In this case, the reflection X set in the measurement process
When the X-ray intensity exceeds the upper limit or falls below the set lower limit of the reflected X-ray intensity, the X-ray absorber 2 is replaced so that the X-ray detector 6 is not destroyed and a wide range of X-ray is detected. It enables highly accurate measurement at the line incident angle.
【００１４】（３）また、本発明は、上記（１）におい
て、Ｘ線吸収体２をＸ線入射角に応じて交換する手段を
設けたことを特徴とする。(3) Further, the present invention is characterized in that, in the above (1), means for exchanging the X-ray absorber 2 according to the X-ray incident angle is provided.
【００１５】この場合には、Ｘ線入射角に対する大凡の
応じた反射Ｘ線強度を予めシミュレーションしておき、
測定過程で設定したＸ線入射角を越えた場合、或いは、
下回った場合に、Ｘ線吸収体２を交換することによっ
て、Ｘ線検出器６を破壊することなく、且つ、広範囲の
Ｘ線入射角における精度の高い測定が可能になるもので
あり、反射Ｘ線強度を監視することなく、ゴニオメータ
ー４の回転角の監視だけで交換が可能になる。In this case, the reflected X-ray intensity corresponding to the X-ray incident angle is simulated in advance,
When the X-ray incidence angle set in the measurement process is exceeded, or
If the X-ray absorber 2 is replaced when it falls below the range, the X-ray detector 6 can be replaced without destroying the X-ray detector 6 and highly accurate measurement can be performed in a wide range of X-ray incident angles. The replacement can be performed only by monitoring the rotation angle of the goniometer 4 without monitoring the line strength.
【００１６】（４）また、本発明は、上記（１）乃至
（３）のいずれかにおいて、入射Ｘ線強度を測定する入
射Ｘ線強度モニター３を設けたことを特徴とする。(4) Furthermore, the present invention is characterized in that, in any of the above (1) to (3), an incident X-ray intensity monitor 3 for measuring the incident X-ray intensity is provided.
【００１７】この様に、入射Ｘ線強度モニター３を設け
ることによって、Ｘ線源１１の強度に応じてＸ線吸収体
２を交換することもできるので、各種のＸ線源１の使用
が可能になり、また、反射Ｘ線強度の絶対値に意味を持
たせることが可能になる。As described above, by providing the incident X-ray intensity monitor 3, the X-ray absorber 2 can be replaced according to the intensity of the X-ray source 11, so that various X-ray sources 1 can be used. In addition, the absolute value of the reflected X-ray intensity can be made meaningful.
【００１８】（５）また、本発明は、上記（４）におい
て、測定したＸ線入射強度で規格化した反射Ｘ線強度を
得る手段を設けたことを特徴とする。(5) Further, the present invention is characterized in that, in the above (4), means for obtaining the reflected X-ray intensity standardized by the measured X-ray incident intensity is provided.
【００１９】このように、測定したＸ線入射強度で反射
Ｘ線強度を規格化したする手段を設けることによって、
反射Ｘ線強度のプロファイルにより正確に被測定試料５
の表面構造を評価することができる。Thus, by providing means for normalizing the reflected X-ray intensity with the measured X-ray incident intensity,
Accurately measure sample 5 by the profile of reflected X-ray intensity
The surface structure of can be evaluated.
【００２０】（６）また、本発明は、上記（１）乃至
（５）のいずれかに記載したＸ線反射率測定装置を用い
たＸ線反射率測定方法において、測定するＸ線入射角領
域を２つ以上の領域に分割し、分割した各領域毎に異な
ったＸ線吸収体２を使用することを特徴とする。(6) Further, the present invention provides an X-ray reflectance measuring method using the X-ray reflectance measuring device as described in any one of the above (1) to (5), wherein an X-ray incident angle region to be measured. Is divided into two or more regions, and a different X-ray absorber 2 is used for each divided region.
【００２１】この様に、予め予測される反射Ｘ線強度に
応じて測定するＸ線入射角領域を２つ以上の領域に分割
し、分割した各領域毎に異なったＸ線吸収体２を使用す
ることによって、広範囲のＸ線入射角領域での測定を精
度良く、且つ、簡単に行うことができる。Thus, the X-ray incident angle region to be measured according to the predicted reflected X-ray intensity is divided into two or more regions, and different X-ray absorbers 2 are used for each divided region. By doing so, measurement in a wide range of X-ray incident angle region can be performed accurately and easily.
【００２２】（７）また、本発明は、上記（６）におい
て、分割した各領域が互いに重なる接続領域を設け、こ
の接続領域の１点以上の測定点で、同一Ｘ線入射角で異
なったＸ線吸収体２を用いて測定を行い、この測定した
反射Ｘ線強度に基づいてＸ線吸収体補正を行うことを特
徴とする。(7) Further, in the present invention, in the above-mentioned (6), a connection area in which the divided areas overlap each other is provided, and at one or more measurement points of this connection area, the same X-ray incidence angle is different. The measurement is performed using the X-ray absorber 2, and the X-ray absorber correction is performed based on the measured reflected X-ray intensity.
【００２３】この様に、同じＸ線入射角におけるＸ線吸
収体がない場合の反射Ｘ線強度とＸ線吸収体がある場合
の反射Ｘ線強度とを測定することによって、測定データ
をスムーズに接続することができる。In this way, by measuring the reflected X-ray intensity when there is no X-ray absorber at the same X-ray incident angle and the reflected X-ray intensity when there is an X-ray absorber, the measurement data can be smoothed. Can be connected.
【００２４】（８）また、本発明は、上記（６）におい
て、Ｘ線入射角を同一方向に走査することによって全て
の測定を行い、分割した各領域の１点以上の測定点で、
同一Ｘ線入射角で異なったＸ線吸収体２を用いて測定を
行い、この測定した反射Ｘ線強度に基づいてＸ線吸収体
補正を行うことを特徴とする。(8) Further, in the present invention according to the above (6), all measurements are performed by scanning the X-ray incident angle in the same direction, and at one or more measurement points in each divided area,
It is characterized in that measurement is performed using different X-ray absorbers 2 at the same X-ray incident angle, and X-ray absorber correction is performed based on the measured reflected X-ray intensity.
【００２５】この様に、少なくとも一点の測定点におい
て、同じＸ線入射角におけるＸ線吸収体２がない場合の
反射Ｘ線強度とＸ線吸収体２がある場合の反射Ｘ線強度
とを測定することによって、Ｘ線吸収体補正を精度良く
行うことができ、測定データをスムーズに、且つ、精度
良く接続することができる。Thus, at least at one measurement point, the reflected X-ray intensity at the same X-ray incident angle without the X-ray absorber 2 and the reflected X-ray intensity with the X-ray absorber 2 are measured. By doing so, the X-ray absorber correction can be performed accurately, and the measurement data can be connected smoothly and with high precision.
【００２６】（９）また、本発明は、上記（６）乃至
（８）のいずれかにおいて、Ｘ線入射角が小さくなる方
向へＸ線入射角の走査を行うことを特徴とする。(9) Further, the present invention is characterized in that, in any one of the above (6) to (8), the X-ray incident angle is scanned in a direction in which the X-ray incident angle becomes smaller.
【００２７】この様に、Ｘ線入射角が小さくなる方向へ
Ｘ線入射角の走査を行うことにより、逆方向に走査した
場合に比べて、Ｘ線検出器６を損傷することがなくな
る。即ち、Ｘ線入射角が大きくなる方向へＸ線入射角の
走査を行った場合、Ｘ線吸収体２の交換の際に、交換し
たＸ線吸収体２のＸ線吸収量の減少の程度が大きすぎる
とＸ線検出器６を損傷させることになるが、Ｘ線入射角
が小さくなる方向へＸ線入射角の走査を行う場合には、
Ｘ線吸収体２を厚くなるように交換するので、どの様に
交換してもＸ線検出器６が交換後直ちに損傷を受けるこ
とがなくなる。Thus, by scanning the X-ray incident angle in the direction in which the X-ray incident angle becomes smaller, the X-ray detector 6 is not damaged as compared with the case of scanning in the opposite direction. That is, when the X-ray incident angle is scanned in the direction in which the X-ray incident angle increases, when the X-ray absorber 2 is replaced, the degree of decrease in the X-ray absorption amount of the replaced X-ray absorber 2 is reduced. If it is too large, the X-ray detector 6 will be damaged. However, when scanning the X-ray incident angle in the direction of decreasing the X-ray incident angle,
Since the X-ray absorber 2 is replaced so as to be thick, the X-ray detector 6 will not be damaged immediately after the replacement, no matter how it is replaced.
【００２８】[0028]
【発明の実施の形態】本発明の第１の実施の形態を図２
及び図３を参照して説明する。 図２参照 図２は本発明のＸ線反射率測定装置の概略的構成図であ
り、図６に示した従来のＸ線反射率測定装置のチャネル
カット結晶１３と入射Ｘ線強度モニター１５側のスリッ
ト１４との間にＸ線吸収体２４を設けたものに相当す
る。FIG. 2 shows a first embodiment of the present invention.
This will be described with reference to FIG. Refer to FIG. 2. FIG. 2 is a schematic configuration diagram of the X-ray reflectance measuring apparatus of the present invention. The channel-cut crystal 13 and the incident X-ray intensity monitor 15 side of the conventional X-ray reflectance measuring apparatus shown in FIG. This corresponds to the one in which the X-ray absorber 24 is provided between the slit 14.
【００２９】即ち、本発明のＸ線反射率測定装置は、回
転対陰極等のＸ線源１１、Ｘ線源１１からの入射Ｘ線２
０を整形するスリット１２、スリット１２を通過した入
射Ｘ線２０の角度発散を抑える平行な二枚一組の平板状
シリコン結晶からなるチャネルカット結晶１３、入射Ｘ
線２０の強度を減衰させるＡｌ板からなるＸ線吸収体２
４、Ｘ線吸収体２４を通過した入射Ｘ線２０を整形する
スリット１４、スリット１４を通過した入射Ｘ線２０の
強度を測定するイオン・チャンバーからなる入射Ｘ線強
度モニター１５、被測定試料１６を載置し被測定試料１
６に対するＸ線入射角２２を任意に設定するゴニオメー
ター１７、被測定資料１６からの反射Ｘ線２１の入射を
制限するスリット１８、スリット１８を介して反射Ｘ線
２１を検出するシンチレーションカウンターからなるＸ
線検出器１９で構成される。That is, the X-ray reflectivity measuring apparatus of the present invention comprises an X-ray source 11 such as a rotating anticathode, and an incident X-ray 2 from the X-ray source 11.
A slit 12 for shaping 0, a channel-cut crystal 13 composed of a pair of parallel plate-like silicon crystals for suppressing angular divergence of an incident X-ray 20 passing through the slit 12, an incident X
X-ray absorber 2 made of an Al plate that attenuates the intensity of the rays 20
4. Slit 14 for shaping incident X-ray 20 that has passed through X-ray absorber 24, incident X-ray intensity monitor 15 including an ion chamber for measuring the intensity of incident X-ray 20 that has passed through slit 14, measurement sample 16 Place the sample to be measured 1
6 includes a goniometer 17 for arbitrarily setting an X-ray incident angle 22 with respect to 6, a slit 18 for limiting the incidence of the reflected X-ray 21 from the measured material 16, and a scintillation counter for detecting the reflected X-ray 21 through the slit 18. X
It is composed of a line detector 19.
【００３０】この場合、スリット１８及びＸ線検出器１
９はゴニオメーター１７に固定されているアーム（図示
せず）に取り付けられて、ゴニオメーター１７の回転に
連動して回転するようになっており、入射Ｘ線２０のＸ
線入射角２２とＸ線検出器１９の仰角２３が等しくなる
ように動作を設定する。In this case, the slit 18 and the X-ray detector 1
The reference numeral 9 is attached to an arm (not shown) fixed to the goniometer 17 so as to rotate in association with the rotation of the goniometer 17, and the X-rays of the incident X-ray 20.
The operation is set so that the line incident angle 22 and the elevation angle 23 of the X-ray detector 19 become equal.
【００３１】図３参照 図３は、このＸ線反射率測定装置を用いて、Ｓｉ基板上
に厚さ１０ｎｍのＣｏ（コバルト）薄膜を堆積させた試
料の測定結果を示すもので、Ｘ線入射角２２の走査をＸ
線入射角２２が減少する様に行うものであり、反射Ｘ線
２１の強度が予め検出限界値以下に設定した設定値を越
えた場合に、Ｘ線吸収体２４をよりＸ線吸収量の多いも
の、即ち、より厚いＸ線吸収体２４に交換する。See FIG. 3. FIG. 3 shows the measurement results of a sample in which a 10 nm-thick Co (cobalt) thin film was deposited on a Si substrate using this X-ray reflectance measuring apparatus. X scan for corner 22
This is performed so that the ray incident angle 22 is reduced, and when the intensity of the reflected X-ray 21 exceeds a set value set below the detection limit value in advance, the X-ray absorber 24 has a larger X-ray absorption amount. The thing, that is, the thicker X-ray absorber 24 is replaced.
【００３２】この場合には、Ｘ線吸収体２２を用いずに
測定を開始したのち、反射Ｘ線２１の強度が設定値（約
２．５×１０5 ｃｐｓ：カウント／秒）を越えた場合
に、即ち、Ｘ線入射角２２が低角側の領域ではＸ線吸収
体２４として厚さ０．９ｍｍのＡｌ板を挿入したもので
あり、０．９ｍｍのＡｌ板によって入射Ｘ線２０の強度
を略１／１０００（１０-3）に減衰することができ、検
出限界が３〜４×１０5ｃｐｓ程度のＸ線検出器１９を
用いて１０8 ｃｐｓを越える値に対応する測定結果を得
ることができる。In this case, when the intensity of the reflected X-ray 21 exceeds the set value (about 2.5 × 10 5 cps: count / second) after starting the measurement without using the X-ray absorber 22. That is, in the region where the X-ray incident angle 22 is on the low angle side, an Al plate having a thickness of 0.9 mm is inserted as the X-ray absorber 24, and the intensity of the incident X-ray 20 is increased by the 0.9 mm Al plate. Can be attenuated to about 1/1000 (10 −3 ), and a measurement result corresponding to a value exceeding 10 8 cps is obtained using the X-ray detector 19 having a detection limit of about 3 to 4 × 10 5 cps. be able to.
【００３３】そして、得られた測定結果は、Ｘ線吸収体
２４を挿入する時に、同じＸ線入射角２２において、挿
入前と挿入後の反射Ｘ線２１の強度を測定して、両者の
強度が同じになるように挿入後の反射Ｘ線２１の強度を
補正して測定結果を連続させて、被測定試料１６の層構
造を評価する。The obtained measurement result shows that when the X-ray absorber 24 is inserted, the intensities of the reflected X-rays 21 before and after the insertion are measured at the same X-ray incident angle 22 to obtain the intensities of both. The intensity of the reflected X-rays 21 after the insertion is corrected so that the values become the same, the measurement results are made continuous, and the layer structure of the sample 16 to be measured is evaluated.
【００３４】例えば、図３のような結果が得られた場合
には、フレネルの式に基づく解析により、被測定試料１
６の層構造が１０ｎｍのＣｏ膜ではなく、実際には、密
度の違う３層からなり、各層の膜厚は表面から２ｎｍ、
１０ｎｍ、２ｎｍで、各界面の凹凸が数Åであると評価
することになる。For example, when the result as shown in FIG. 3 is obtained, the sample 1 to be measured is analyzed by the Fresnel equation.
The layer structure of 6 is not a 10 nm Co film, but is actually composed of 3 layers with different densities, and the thickness of each layer is 2 nm from the surface,
At 10 nm and 2 nm, the unevenness of each interface is evaluated to be several Å.
【００３５】この様に、反射Ｘ線２１の強度に応じてＸ
線吸収体２４を交換して反射Ｘ線２１の強度を測定する
ことによって、Ｘ線入射角２２の大きな領域における測
定を大きな強度の入射Ｘ線２０を用いて行うことができ
るので、測定時間を短縮化しても、精度の高い測定を行
うことができる。As described above, X is determined according to the intensity of the reflected X-ray 21.
By replacing the radiation absorber 24 and measuring the intensity of the reflected X-ray 21, it is possible to perform the measurement in the region where the X-ray incident angle 22 is large by using the incident X-ray 20 having a large intensity, so that the measurement time is increased. Even if shortened, highly accurate measurement can be performed.
【００３６】また、第１の実施の形態の様に、Ｘ線入射
角２２の走査をＸ線入射角２２が減少する様に行うこと
によって、反射Ｘ線２１の強度のプロファイルを確認し
ながら、適切な厚さのＸ線吸収体２４に交換することが
できるので、プロファイルの精度を損なうことはない。Further, as in the first embodiment, by scanning the X-ray incident angle 22 so that the X-ray incident angle 22 decreases, while confirming the intensity profile of the reflected X-ray 21, Since the X-ray absorber 24 having an appropriate thickness can be replaced, the accuracy of the profile is not impaired.
【００３７】なお、この様なＸ線反射率の測定において
は、その強度は図から明らかなように波打つことになる
ので、この様な場合のプロファイルの精度を損なわない
ように、Ｘ線入射角２２が減少するように走査したにも
拘らず、途中で反射Ｘ線２１の強度が減少し、予め設定
した設定値を下回ったときには、より吸収量の小さな薄
いＸ線吸収体２４に交換して測定を行うようにしても良
い。In the measurement of the X-ray reflectance as described above, the intensity of the X-ray reflectance is wavy as is apparent from the figure. Therefore, the X-ray incidence angle should be kept so as not to impair the accuracy of the profile in such a case. When the intensity of the reflected X-rays 21 decreases in the middle of the scanning even though the scanning is performed so that the number of X-rays 22 decreases, and when the intensity of the reflected X-rays 21 falls below a preset set value, the thin X-ray absorber 24 having a smaller absorption amount is replaced. You may make it measure.
【００３８】また、上記の第１の実施の形態において
は、Ｘ線吸収体２４を一度挿入するだけ、即ち、厚さ０
ｍｍのＸ線吸収体２４から厚さ０．９ｍｍのＸ線吸収体
２４へ交換するの相当するものであるが、より精密な且
つ広範囲のＸ線入射角２２の測定を行うために、複数回
の交換を行っても良いものである。Further, in the above-described first embodiment, the X-ray absorber 24 is only inserted once, that is, the thickness is 0.
This is equivalent to replacing the X-ray absorber 24 having a thickness of 0.9 mm with the X-ray absorber 24 having a thickness of 0.9 mm, but is performed a plurality of times in order to measure the X-ray incident angle 22 more precisely and in a wide range. It is also possible to exchange.
【００３９】また、上記の第１の実施の形態において
は、反射Ｘ線２１の強度によってＸ線吸収体２４を交換
しているが、反射Ｘ線２１の強度と入射Ｘ線２０の強度
との相関の大まかな様子が知られている場合には、Ｘ線
入射角２２に設定値を設け、この設定値を下回った場合
に、より厚いＸ線吸収体２４に置き換えるようにしても
良い。In the first embodiment, the X-ray absorber 24 is replaced by the intensity of the reflected X-ray 21, but the intensity of the reflected X-ray 21 and the intensity of the incident X-ray 20 are different from each other. When the rough appearance of the correlation is known, a setting value may be set for the X-ray incident angle 22, and when it falls below this setting value, it may be replaced with a thicker X-ray absorber 24.
【００４０】さらに、Ｘ線入射角２２の走査方向を逆に
しても良く、この場合には、最初に一番厚いＸ線吸収体
２４を挿入し、所定の設定値を下回った場合に、より薄
いＸ線吸収体２４に交換していけば良い。Further, the scanning direction of the X-ray incident angle 22 may be reversed, and in this case, the thickest X-ray absorber 24 is inserted first, and when the value is below the predetermined set value, It may be replaced with a thin X-ray absorber 24.
【００４１】但し、この場合には、交換の際に、交換し
たＸ線吸収体２４のＸ線吸収量の減少の程度が大きすぎ
るとＸ線検出器１９を損傷させることになり、また、交
換したＸ線吸収体２４のＸ線吸収量の減少の程度が小さ
すぎると頻繁な交換が必要となるので注意を要すること
になる。However, in this case, when the X-ray absorption amount of the exchanged X-ray absorber 24 is excessively reduced, the X-ray detector 19 will be damaged. If the degree of decrease in the amount of X-ray absorption of the X-ray absorber 24 is too small, frequent replacement will be necessary, so caution must be exercised.
【００４２】次に、図４及び図５を参照して本発明の第
２の実施の形態を説明する。なお、図４は第２の実施の
形態の測定方法を概念的に説明するものであって、Ｘ線
入射角領域を２つの領域、即ち、低角領域Ａと高角領域
Ｂとに分割するものであり、図４（ａ）は反射Ｘ線強度
を示し、図４（ｂ）は入射Ｘ線強度を示す。この場合、
測定データをスムーズに接続するために低角領域Ａと高
角領域Ｂとがオーバラップする接続領域Ｃを設けてお
く。Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 4 conceptually illustrates the measurement method of the second embodiment, in which the X-ray incident angle region is divided into two regions, that is, a low angle region A and a high angle region B. 4A shows the reflected X-ray intensity, and FIG. 4B shows the incident X-ray intensity. in this case,
In order to connect the measurement data smoothly, a connection area C where the low-angle area A and the high-angle area B overlap is provided.
【００４３】図４（ａ）参照 まず、Ｘ線吸収体２４を用いないで、Ｘ線入射角２２が
減少するように走査しながら、高角領域Ｂにおける反射
Ｘ線２１の強度を測定し、接続領域Ｃにおいては、Ｘ線
吸収体２４を挿入した場合と外した場合について測定
し、その後の低角領域Ａにおいては、Ｘ線吸収体２４を
挿入して測定を行う。Referring to FIG. 4A, the intensity of the reflected X-rays 21 in the high-angle region B is measured and connected without using the X-ray absorber 24 while scanning so that the X-ray incident angle 22 decreases. In the region C, measurement is performed with and without the X-ray absorber 24 inserted, and in the subsequent low-angle region A, the X-ray absorber 24 is inserted and measured.
【００４４】また、この測定データを接続する場合に
は、接続領域Ｃにおける低角領域Ａにおけるデータと高
角領域Ｂにおけるデータの平均値が一致するように接続
するものであり、Ｘ線反射率プロファイルは見かけ上、
Ｘ線検出器１９の測定上限を越えており、従来のＸ線反
射率プロファイルよりもＸ線強度の広い範囲に渡る測
定、即ち、広いＸ線入射角２２の範囲での測定を行うこ
とになっており、従って、基板の表面構造に関して従来
よりも高精度の評価が可能になる。Further, when connecting the measurement data, the connection is made so that the average values of the data in the low-angle region A and the data in the high-angle region B in the connection region C match, and the X-ray reflectance profile Is apparently
The upper limit of measurement of the X-ray detector 19 is exceeded, and measurement is performed over a wider range of X-ray intensity than the conventional X-ray reflectance profile, that is, measurement is performed within a wide X-ray incident angle 22 range. Therefore, the surface structure of the substrate can be evaluated with higher accuracy than ever before.
【００４５】図４（ｂ）参照 なお、この場合の接続領域Ｃにおける低角領域Ａにおけ
るデータと高角領域Ｂにおけるデータの接続は、反射Ｘ
線２１の強度ではなく、図に示す入射Ｘ線強度モニター
１５における入射Ｘ線２０の強度の測定値を用いて行っ
ても良い。See FIG. 4B. In this case, the connection between the data in the low-angle area A and the data in the high-angle area B in the connection area C is the reflection X.
Instead of the intensity of the line 21, the measurement value of the intensity of the incident X-ray 20 in the incident X-ray intensity monitor 15 shown in the figure may be used.
【００４６】何れにしても、接続領域Ｃにおける低角領
域Ａにおけるデータと高角領域Ｂにおけるデータの接続
は、それらの間のズレが最小になるような方法であれば
いかなる方法でも構わないものであり、通常は最小二乗
法を用いる。In any case, any method may be used to connect the data in the low-angle area A and the data in the high-angle area B in the connection area C as long as the deviation between them is minimized. Yes, usually the least squares method is used.
【００４７】図５（ａ）参照 図５（ａ）は、図２に示すＸ線反射率測定装置を用い
て、Ｓｉ基板上に厚さ１０ｎｍのＣｏ（コバルト）薄膜
を堆積させた試料（図３の場合と同じ試料）の測定結果
を示すもので、まず、Ｘ線吸収体２４を用いないで、Ｘ
線入射角２２が減少するように走査しながら、高角領域
Ｂにおける反射Ｘ線２１の強度を測定し、接続領域Ｃに
おいては、Ｘ線入射角２２の２００の測定点において、
Ｘ線吸収体２４を挿入した場合と外した場合について測
定し、その後の低角領域Ａにおいては、Ｘ線吸収体２４
を挿入して測定を行う。See FIG. 5A. FIG. 5A is a sample (FIG. 5) in which a 10 nm-thick Co (cobalt) thin film is deposited on a Si substrate using the X-ray reflectivity measuring apparatus shown in FIG. 3 shows the measurement results of the same sample as in the case of No. 3). First, without using the X-ray absorber 24,
The intensity of the reflected X-rays 21 in the high angle region B is measured while scanning so that the line incident angle 22 decreases, and in the connection region C, at the 200 measurement points of the X-ray incident angle 22,
The measurement was performed when the X-ray absorber 24 was inserted and when the X-ray absorber 24 was removed.
Insert and measure.
【００４８】この場合、Ｘ線吸収体２４を外した状態で
高角領域Ｂから接続領域Ｃの低角領域Ａ境界まで測定し
たのち、ゴニオメーター１７の回転角を接続領域Ｃの高
角領域Ｂ境界まで戻し、Ｘ線吸収体２４を挿入してその
後の測定を行うこともできるが、その場合には、Ｘ線入
射角２２の値の再現性が悪くなる。In this case, after measuring from the high angle region B to the low angle region A boundary of the connection region C with the X-ray absorber 24 removed, the rotation angle of the goniometer 17 is measured up to the high angle region B boundary of the connection region C. It is also possible to return and insert the X-ray absorber 24 and perform the subsequent measurement, but in that case, the reproducibility of the value of the X-ray incident angle 22 becomes poor.
【００４９】しかし、本発明の実施の形態の場合には、
ゴニオメーター１７の回転角の向きを一定にしたままで
測定することができるため、ゴニオメーター１７の回転
角の精度（２／１０００度）に匹敵するＸ線入射角２２
の再現性が得られる。However, in the case of the embodiment of the present invention,
Since the measurement can be performed with the direction of the rotation angle of the goniometer 17 kept constant, the X-ray incidence angle 22 is comparable to the accuracy of the rotation angle of the goniometer 17 (2/1000 degrees).
Reproducibility is obtained.
【００５０】図５（ｂ）参照 また、この測定データを接続する場合には、接続領域Ｃ
における低角領域Ａにおけるデータと高角領域Ｂにおけ
るデータの平均値が一致するように接続するのであり、
図から明らかなように、Ｘ線反射率プロファイルは見か
け上、Ｘ線検出器１９の測定上限を越えており、従来の
Ｘ線反射率プロファイルよりもＸ線強度の広い範囲に渡
る測定、即ち、広いＸ線入射角２２の範囲での測定結果
となっており、従って、基板の層構造に関して従来より
も高精度の評価が可能になる。See FIG. 5B. In addition, when connecting the measurement data, the connection area C
Are connected so that the average values of the data in the low-angle area A and the data in the high-angle area B in
As is apparent from the figure, the X-ray reflectance profile apparently exceeds the upper limit of measurement of the X-ray detector 19, and the measurement over a wider range of X-ray intensity than the conventional X-ray reflectance profile, that is, The measurement result is in a wide range of the X-ray incident angle 22, and therefore, the layer structure of the substrate can be evaluated with higher accuracy than before.
【００５１】なお、図５（ｂ）のような結果が得られた
場合には、図３の場合と同様に、フレネルの式に基づく
解析により、被測定試料１６の層構造が密度の違う３層
からなり、各層の膜厚は表面から２ｎｍ、１０ｎｍ、２
ｎｍで、各界面の凹凸が数Åであると評価することにな
る。When the result shown in FIG. 5B is obtained, the layer structure of the sample 16 to be measured has different densities by the analysis based on the Fresnel's equation as in the case of FIG. Each layer has a thickness of 2 nm, 10 nm, 2 from the surface.
In nm, the unevenness of each interface will be evaluated as several Å.
【００５２】なお、第２の実施の形態においては、接続
領域Ｃにおいて２００の測定点で測定を行っているが、
最低１つの測定点で測定を行えば良く、さらに、２点以
上の測定点で測定を行うことが望ましい。In the second embodiment, the measurement is performed at 200 measurement points in the connection area C.
It suffices to perform the measurement at at least one measurement point, and it is desirable to perform the measurement at two or more measurement points.
【００５３】また、この様なＸ線反射率の測定において
は、第１の実施の形態と同様にその強度は図から明らか
なように波打つことになるので、この様な場合のプロフ
ァイルの精度を高めるために、Ｘ線入射角２２が減少す
るように走査したにも拘らず、途中で反射Ｘ線２１の強
度が減少し、予め設定した設定値を下回ったときには、
より吸収量の小さな薄いＸ線吸収体２４に交換して測定
を行っても良い。Further, in the measurement of the X-ray reflectivity as described above, the intensity thereof is wavy as is apparent from the figure as in the case of the first embodiment. Therefore, the accuracy of the profile in such a case is determined. In order to increase the X-ray incidence angle 22, the intensity of the reflected X-rays 21 decreases in the middle of scanning while the X-ray incidence angle 22 decreases, and when the intensity falls below a preset set value,
The measurement may be performed by exchanging the thin X-ray absorber 24 having a smaller absorption amount.
【００５４】また、上記の第２の実施の形態において
は、Ｘ線吸収体２４を一度挿入するだけであるが、即
ち、厚さ０ｍｍのＸ線吸収体２４から厚さ０．９ｍｍの
Ｘ線吸収体２４へ交換することに相当するものである
が、より精密な且つ広範囲のＸ線入射角２２の測定を行
うために、複数回の交換を行っても良いものである。In the second embodiment described above, the X-ray absorber 24 is only inserted once, that is, the X-ray absorber 24 having a thickness of 0 mm and the X-ray having a thickness of 0.9 mm are used. This is equivalent to replacing the absorber 24, but may be replaced a plurality of times in order to measure the X-ray incident angle 22 more precisely and in a wider range.
【００５５】また、上記の第２の実施の形態において
は、反射Ｘ線２１の強度によってＸ線吸収体２４を交換
しているが、反射Ｘ線２１の強度と入射Ｘ線２０の強度
との相関の大まかな様子が知られている場合には、Ｘ線
入射角２２に設定値を設け、この設定値を下回った場合
に、より厚いＸ線吸収体２４に置き換えるようにしても
良い。In the second embodiment, the X-ray absorber 24 is exchanged depending on the intensity of the reflected X-ray 21, but the intensity of the reflected X-ray 21 and the intensity of the incident X-ray 20 are different from each other. When the rough appearance of the correlation is known, a setting value may be set for the X-ray incident angle 22, and when it falls below this setting value, it may be replaced with a thicker X-ray absorber 24.
【００５６】さらに、Ｘ線入射角２２の走査方向を逆に
しても良く、この場合には、最初に一番厚にＸ線吸収体
２４を挿入し、所定の設定値を下回った場合に、より薄
いＸ線吸収体２４に交換していけば良い。Further, the scanning direction of the X-ray incident angle 22 may be reversed, and in this case, when the X-ray absorber 24 is first inserted to the thickest and the value is below the predetermined value, It may be exchanged for a thinner X-ray absorber 24.
【００５７】なお、上記の各実施の形態においては、Ｘ
線吸収体２４の交換手段については言及していないが、
反射Ｘ線２１の測定強度、入射Ｘ線２０の測定強度、或
いは、Ｘ線入射角２２、即ち、ゴニオメーター１７の回
転角に応じて自動的に交換する手段を用いても良いもの
である。In each of the above embodiments, X
Although the replacement means of the line absorber 24 is not mentioned,
A means for automatically exchanging the measured intensity of the reflected X-ray 21, the incident X-ray 20, or the incident angle 22 of the X-ray, that is, the rotation angle of the goniometer 17 may be used.
【００５８】例えば、Ｘ線検出器１９で検出した反射Ｘ
線２１の強度を比較増幅器に入力し、測定限界、一般的
には測定上限より予め低く設定した設定値と比較し、そ
の出力によってステップモータ等を駆動してＸ線吸収体
２４を吸収量の異なるＸ線吸収体２４に交換するように
すれば良い。For example, the reflection X detected by the X-ray detector 19
The intensity of the line 21 is input to a comparison amplifier and compared with a measurement limit, which is generally a preset value lower than the measurement upper limit, and the output thereof drives a step motor or the like to cause the X-ray absorber 24 to absorb the absorption amount. The X-ray absorber 24 may be replaced with a different one.
【００５９】また、反射Ｘ線２１の強度は入射Ｘ線強度
に依存することになるが、入射Ｘ線２０の強度は入射Ｘ
線強度モニター１５で測定しているので、入射Ｘ線強度
モニター１５の測定した入射Ｘ線強度で規格化した反射
Ｘ線強度を得るようにすることによって、規格化された
反射Ｘ線強度によって広いＸ線入射角２２の範囲におけ
るＸ線反射率を直接観測することができ、被測定試料１
６の表面構造の大凡の評価をリアルタイムに行うことが
できる。Although the intensity of the reflected X-ray 21 depends on the intensity of the incident X-ray, the intensity of the incident X-ray 20 is the intensity of the incident X-ray.
Since the measurement is performed by the line intensity monitor 15, by obtaining the reflected X-ray intensity standardized by the incident X-ray intensity measured by the incident X-ray intensity monitor 15, the standardized reflected X-ray intensity is wide. The X-ray reflectance in the range of the X-ray incident angle 22 can be directly observed, and the measured sample 1
Rough evaluation of the surface structure of No. 6 can be performed in real time.
【００６０】この場合、例えば、Ｘ線検出器１９の後段
に設けた（図示せず）増幅器の増幅率を入射Ｘ線強度モ
ニター１５が測定した入射Ｘ線強度に応じて変更するこ
とによって、見かけ上、スムーズに接続されたデータを
得ることができる。In this case, for example, by changing the amplification factor of an amplifier (not shown) provided after the X-ray detector 19 according to the incident X-ray intensity measured by the incident X-ray intensity monitor 15, the apparent Above, you can get the data connected smoothly.
【００６１】なお、入射Ｘ線強度で規格化するというこ
とは、Ｘ線吸収体２４のＸ線吸収率、即ち、Ｘ線吸収体
２４の厚さで規格化するということと同等であるので、
Ｘ線検出器１９の後段に設けた（図示せず）増幅器の増
幅率を挿入しているＸ線吸収体２４の厚さに応じて変更
するようにしても良い。The standardization by the incident X-ray intensity is equivalent to the standardization by the X-ray absorption rate of the X-ray absorber 24, that is, the thickness of the X-ray absorber 24.
The amplification factor of an amplifier (not shown) provided at the subsequent stage of the X-ray detector 19 may be changed according to the thickness of the X-ray absorber 24 into which the amplifier is inserted.
【００６２】また、上記の各実施の形態においては、Ｘ
線吸収体２４を入射Ｘ線２０を減衰させる位置に挿入し
ているが、ゴニオメーター１７に固定されたアームに取
り付けてゴニオメーター１７とスリット１８との間に設
け、反射Ｘ線２１を減衰させるようにしても良く、その
場合には、入射Ｘ線２０の強度を任意に大きくすること
ができるので、測定強度が向上し、また、測定時間が短
縮化される。In each of the above embodiments, X
Although the radiation absorber 24 is inserted at a position where the incident X-ray 20 is attenuated, it is attached to an arm fixed to the goniometer 17 and provided between the goniometer 17 and the slit 18 to attenuate the reflected X-ray 21. However, in this case, the intensity of the incident X-ray 20 can be arbitrarily increased, so that the measurement intensity is improved and the measurement time is shortened.
【００６３】[0063]
【発明の効果】本発明によれば、Ｘ線検出器が正しくＸ
線を検出できる検出限界を見かけ上越えた強度範囲での
測定が可能になるため、Ｘ線反射率法による材料評価の
精度や信頼性を格段に向上させることができる。According to the present invention, the X-ray detector is properly X-rayed.
Since it is possible to perform measurement in an intensity range that apparently exceeds the detection limit for detecting rays, the accuracy and reliability of material evaluation by the X-ray reflectance method can be significantly improved.
【図１】本発明の原理的構成の説明図である。FIG. 1 is an explanatory diagram of a principle configuration of the present invention.
【図２】本発明のＸ線反射率測定装置の概略的構成の説
明図である。FIG. 2 is an explanatory diagram of a schematic configuration of an X-ray reflectance measuring device of the present invention.
【図３】本発明の第１の実施の形態の測定結果の説明図
である。FIG. 3 is an explanatory diagram of a measurement result according to the first embodiment of this invention.
【図４】本発明の第２の実施の形態の測定方法の説明図
である。FIG. 4 is an explanatory diagram of a measuring method according to a second embodiment of the present invention.
【図５】本発明の第２の実施の形態の測定結果の説明図
である。FIG. 5 is an explanatory diagram of measurement results according to the second embodiment of this invention.
【図６】従来のＸ線反射率測定装置の説明図である。FIG. 6 is an explanatory diagram of a conventional X-ray reflectance measuring device.
１ Ｘ線源 ２ Ｘ線吸収体 ３ 入射Ｘ線強度モニター ４ ゴニオメーター ５ 被測定試料 ６ Ｘ線検出器 ７ Ｘ線通路 ８ Ｘ線通路 １１ Ｘ線源 １２ スリット １３ チャンネルカット結晶 １４ スリット １５ 入射Ｘ線強度モニター １６ 被測定試料 １７ ゴニオメーター １８ スリット １９ Ｘ線検出器 ２０ 入射Ｘ線 ２１ 反射Ｘ線 ２２ Ｘ線入射角 ２３ 仰角 ２４ Ｘ線吸収体 1 X-ray source 2 X-ray absorber 3 Incident X-ray intensity monitor 4 Goniometer 5 Sample to be measured 6 X-ray detector 7 X-ray passage 8 X-ray passage 11 X-ray source 12 Slit 13 Channel cut crystal 14 Slit 15 Incident X Line intensity monitor 16 Sample to be measured 17 Goniometer 18 Slit 19 X-ray detector 20 Incident X-ray 21 Reflected X-ray 22 X-ray incident angle 23 Elevation angle 24 X-ray absorber
Claims (9)
に、Ｘ線吸収体を設けたことを特徴とするＸ線反射率測
定装置。1. An X-ray reflectivity measuring apparatus comprising an X-ray absorber provided in an X-ray passage between an X-ray source and an X-ray detector.
て交換する手段を設けたことを特徴とする請求項１記載
のＸ線反射率測定装置。2. The X-ray reflectance measuring apparatus according to claim 1, further comprising means for exchanging the X-ray absorber according to a reflected X-ray intensity.
交換する手段を設けたことを特徴とする請求項１記載の
Ｘ線反射率測定装置。3. The X-ray reflectance measuring apparatus according to claim 1, further comprising means for replacing the X-ray absorber according to an X-ray incident angle.
強度モニターを設けたことを特徴とする請求項１乃至３
のいずれか１項に記載のＸ線反射率測定装置。4. An incident X-ray intensity monitor for measuring the incident intensity of the X-rays is provided.
The X-ray reflectance measuring device according to any one of 1.
反射Ｘ線強度を得る手段を設けたことを特徴とする請求
項４記載のＸ線反射率測定装置。5. The X-ray reflectance measuring apparatus according to claim 4, further comprising means for obtaining a reflected X-ray intensity standardized by the measured X-ray incident intensity.
Ｘ線反射率測定装置を用いたＸ線反射率測定方法におい
て、測定するＸ線入射角領域を２つ以上の領域に分割
し、前記分割した各領域毎に異なったＸ線吸収体を使用
することを特徴とするＸ線反射率測定方法。6. An X-ray reflectance measuring method using the X-ray reflectance measuring device according to claim 1, wherein an X-ray incident angle region to be measured is divided into two or more regions. The X-ray reflectance measuring method is characterized by using different X-ray absorbers for each of the divided regions.
で、同一Ｘ線入射角で異なったＸ線吸収体を用いて測定
を行い、前記測定した反射Ｘ線強度に基づいてＸ線吸収
体補正を行うことを特徴とする請求項６記載のＸ線反射
率測定方法。7. The X-ray is measured at one or more measurement points in each of the divided regions using different X-ray absorbers at the same X-ray incident angle, and the X-ray is measured based on the measured reflected X-ray intensity. The X-ray reflectance measuring method according to claim 6, wherein an absorber correction is performed.
とによって全ての測定を行い、上記分割した各領域の１
点以上の測定点で、同一Ｘ線入射角で異なったＸ線吸収
体を用いて測定を行い、前記測定した反射Ｘ線強度に基
づいてＸ線吸収体補正を行うことを特徴とする請求項６
記載のＸ線反射率測定方法。8. All measurements are performed by scanning the X-ray incident angle in the same direction, and one of each of the divided regions is measured.
The measurement is performed using different X-ray absorbers at the same X-ray incident angle at more than one measurement point, and the X-ray absorber correction is performed based on the measured reflected X-ray intensity. 6
The X-ray reflectance measuring method described.
入射角の走査を行うことを特徴とする請求項６乃至８の
いずれか１項に記載のＸ線反射率測定方法。9. The X-ray reflectance measuring method according to claim 6, wherein scanning of the X-ray incident angle is performed in a direction in which the X-ray incident angle decreases.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26517995A JP3348269B2 (en) | 1995-10-13 | 1995-10-13 | X-ray reflectance measurement method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7248669B2 (en) | 2003-10-06 | 2007-07-24 | Rigaku Corporation | Method for analyzing membrane structure and apparatus therefor |
| JP2017504044A (en) * | 2014-01-28 | 2017-02-02 | ブルカー・エイエックスエス・インコーポレイテッドＢｒｕｋｅｒ ＡＸＳ， Ｉｎｃ． | X-ray diffraction based crystallographic analysis method |
-
1995
- 1995-10-13 JP JP26517995A patent/JP3348269B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7248669B2 (en) | 2003-10-06 | 2007-07-24 | Rigaku Corporation | Method for analyzing membrane structure and apparatus therefor |
| KR100969213B1 (en) * | 2003-10-06 | 2010-07-09 | 가부시키가이샤 리가쿠 | Method for analyzing membrane structure and apparatus therefor |
| JP2017504044A (en) * | 2014-01-28 | 2017-02-02 | ブルカー・エイエックスエス・インコーポレイテッドＢｒｕｋｅｒ ＡＸＳ， Ｉｎｃ． | X-ray diffraction based crystallographic analysis method |
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