JPH089260A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH089260A JPH089260A JP6206755A JP20675594A JPH089260A JP H089260 A JPH089260 A JP H089260A JP 6206755 A JP6206755 A JP 6206755A JP 20675594 A JP20675594 A JP 20675594A JP H089260 A JPH089260 A JP H089260A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- charge amount
- imaging device
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、映像光を結像しそれを
電気信号に変換する固体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device for forming image light and converting it into an electric signal.
【０００２】[0002]
【従来の技術】従来の固体撮像装置の構成例を図１３に
示す。図１３において、１は固体撮像素子、２は信号処
理手段、３はアナログ−デジタル変換手段、４は撮像素
子制御手段を示す。2. Description of the Related Art A configuration example of a conventional solid-state image pickup device is shown in FIG. In FIG. 13, 1 is a solid-state image pickup device, 2 is a signal processing unit, 3 is an analog-digital conversion unit, and 4 is an image pickup device control unit.
【０００３】図１３の固体撮像装置において、固体撮像
素子１は一撮像期間毎に入射した光量に応じて固体撮像
素子１の内部で電荷を蓄積し、蓄積した電荷量の大きさ
を示す信号を出力するとともに電荷の蓄積量が０にリセ
ットするように、撮像素子制御手段４は固体撮像素子１
を動作制御する。固体撮像素子１からの出力信号は信号
処理手段２でノイズ除去、ガンマ補正、増幅等の処理さ
れた後、アナログ−デジタル変換手段３に入力され、デ
ジタル値に変換されアナログ−デジタル変換手段３から
出力される。In the solid-state image pickup device of FIG. 13, the solid-state image pickup device 1 accumulates electric charges inside the solid-state image pickup device 1 according to the amount of light incident for each image pickup period, and outputs a signal indicating the amount of accumulated electric charge. The image pickup device control means 4 controls the solid-state image pickup device 1 so that the output charge and the accumulated charge amount are reset to zero.
Control the operation. The output signal from the solid-state image sensor 1 is processed by the signal processing means 2 such as noise removal, gamma correction, amplification, etc., and then input to the analog-digital conversion means 3 and converted into a digital value from the analog-digital conversion means 3. Is output.
【０００４】[0004]
【発明が解決しようとする課題】図１３の固体撮像装置
の固体撮像素子１において、一撮像期間内に蓄積される
電荷量と電荷蓄積時間の関係を図１４のグラフに示し、
また、一撮像期間内に蓄積される電荷量と入射した光量
の関係を図１５のグラフに示す。ただし、図１４，図１
５におけるＱsatは、図１３の固体撮像装置の固体撮像
素子１における最大蓄積電荷量で、光の入射が続いてい
てもＱsatを越える電荷は蓄積されない。そのため、図
１３に示される従来方式の固体撮像装置においては、蓄
積電荷量がゼロからＱsatの幅を越える入射光の強さを
アナログ−デジタル変換手段３の出力において表現する
ことができない。これは固体撮像素子の特性により決定
されるあるレベルより強い光が入射した場合、固体撮像
素子に蓄積される電荷量は飽和し、入射した光の強さを
固体撮像素子に蓄積された電荷量によって表現すること
ができなくなることを示す。そのため、この飽和電荷量
によって決まる輝度範囲を越えた輝度の幅を持つ入射映
像光の再現は不可能である。In the solid-state image pickup device 1 of the solid-state image pickup device shown in FIG. 13, the relationship between the amount of charges accumulated in one image pickup period and the charge accumulation time is shown in the graph of FIG.
Further, the relationship between the amount of charge accumulated in one imaging period and the amount of incident light is shown in the graph of FIG. However, FIG. 14 and FIG.
Qsat in 5 is the maximum accumulated charge amount in the solid-state image pickup device 1 of the solid-state image pickup device of FIG. 13, and even if light is continuously incident, charges exceeding Qsat are not accumulated. Therefore, in the conventional solid-state imaging device shown in FIG. 13, the intensity of incident light whose accumulated charge amount exceeds zero to the width of Qsat cannot be expressed in the output of the analog-digital conversion means 3. This is because when light with a intensity higher than a certain level determined by the characteristics of the solid-state image sensor is incident, the amount of charge accumulated in the solid-state image sensor is saturated, and the intensity of the incident light is the amount of charge accumulated in the solid-state image sensor. Indicates that cannot be expressed by. Therefore, it is impossible to reproduce the incident image light having a brightness width exceeding the brightness range determined by the saturated charge amount.
【０００５】本発明は前記従来の問題に留意し、入射光
に対するダイナミックレンジ（その出力によって表現す
ることが可能な入射光の強さの範囲）をより大きく得ら
れる固体撮像装置を提供することを目的とする。In view of the above-mentioned conventional problems, the present invention provides a solid-state image pickup device which can obtain a larger dynamic range for incident light (range of intensity of incident light that can be expressed by its output). To aim.
【０００６】[0006]
【課題を解決するための手段】本発明は前記目的を達成
するために、固体撮像素子の蓄積可能電荷量が一撮像期
間内に第一の電荷量（Ｑsat1≠０）、第二の電荷量（Ｑ
sat2≠０、Ｑsat1＜Ｑsat2）の順に切替わるように固体
撮像素子を制御する固体撮像装置の構成とする。According to the present invention, in order to achieve the above object, the amount of charge that can be accumulated in a solid-state image sensor is a first amount of charge (Qsat1 ≠ 0) and a second amount of charge within one imaging period. (Q
The solid-state imaging device is configured to control the solid-state imaging device so that sat2 ≠ 0 and Qsat1 <Qsat2) are switched in this order.
【０００７】[0007]
【作用】上記構成において、固体撮像素子の蓄積可能電
荷量を第二の電荷量（Ｑsat2≠０、Ｑsat1＜Ｑsat2）と
する時間を制限することにより、入射光量−電気信号の
関係はニー特性（特性グラフの折れ曲がり）を持つよう
になり、固体撮像素子において入射光を蓄積電荷量で一
意に表現することができる範囲が大きくなる。つまり、
固体撮像装置のダイナミックレンジが向上する。In the above structure, by limiting the time during which the storable charge amount of the solid-state image pickup device is set to the second charge amount (Qsat2 ≠ 0, Qsat1 <Qsat2), the relationship between the incident light amount and the electric signal is the knee characteristic ( Bending of the characteristic graph) increases the range in which the incident light can be uniquely expressed by the amount of accumulated charges in the solid-state imaging device. That is,
The dynamic range of the solid-state imaging device is improved.
【０００８】[0008]
【実施例】以下、本発明の実施例について図面を用いて
説明する。Embodiments of the present invention will be described below with reference to the drawings.
【０００９】図１は、本発明の固体撮像装置の第１の実
施例の構成図で、図中の１は固体撮像素子、２は信号処
理手段、３はアナログ−デジタル変換手段、４は撮像素
子制御手段、５は蓄積電荷切替手段を示している。図１
において、固体撮像素子１、信号処理手段２、アナログ
−デジタル変換手段３、撮像素子制御手段４は従来例
（図８）に示したものと同じである。FIG. 1 is a block diagram of a first embodiment of a solid-state image pickup device of the present invention. In the figure, 1 is a solid-state image pickup element, 2 is signal processing means, 3 is analog-digital conversion means, and 4 is image pickup. The element control means 5 indicates an accumulated charge switching means. Figure 1
In the above, the solid-state imaging device 1, the signal processing unit 2, the analog-digital conversion unit 3, and the imaging device control unit 4 are the same as those shown in the conventional example (FIG. 8).
【００１０】蓄積電荷切替装置５は、固体撮像素子１の
ＯＦＤ（オーバーフロードレイン）制御のために固体撮
像素子１に与える電位（Ｖsub）を一撮像期間内のある
時間（Ｔｃ）で変えることによって、一撮像期間内の最
初から時間Ｔｃまでの固体撮像素子１の蓄積可能電荷量
はＱsat1、時間Ｔｃ後はＱsat2と切替わるように、撮像
素子制御手段４の出力信号に変更を加えて出力する機能
を持つ。The accumulated charge switching device 5 changes the potential (Vsub) applied to the solid-state image pickup device 1 for controlling the OFD (overflow drain) of the solid-state image pickup device 1 at a certain time (Tc) within one image pickup period. A function for changing and outputting the output signal of the image sensor control unit 4 so that the storable charge amount of the solid-state image sensor 1 from the beginning to the time Tc within one imaging period is switched to Qsat1 and after the time Tc is switched to Qsat2. have.
【００１１】図１の固体撮像素子１において、一撮像期
間内に蓄積される電荷量と電荷蓄積時間の関係は図２の
実線（グラフｂ）に示され、一撮像期間内に蓄積される
電荷量と入射した光量の関係は図３の実線（グラフｄ）
に示される。図２，図３の点線（それぞれグラフａ、グ
ラフｃ）が、従来の固体撮像装置の特性を示したもので
ある。In the solid-state image pickup device 1 of FIG. 1, the relationship between the amount of charge accumulated in one image pickup period and the charge accumulation time is shown by the solid line (graph b) in FIG. 2, and the charge accumulated in one image pickup period. The relationship between the amount and the amount of incident light is shown by the solid line in Figure 3 (graph d).
Shown in. Dotted lines in FIGS. 2 and 3 (graph a and graph c, respectively) show the characteristics of the conventional solid-state imaging device.
【００１２】本実施例（図１の固体撮像装置）の蓄積電
荷切替手段５の効果として、図３に示される通り、従来
方式に対してダイナミックレンジ（蓄積電荷量で表現で
きる入射光量の範囲）の向上を実現することができる。
つまり、一撮像期間内に固体撮像素子の蓄積可能電荷量
を第１の電荷量（Ｑsat1≠０）、第２の電荷量（Ｑsat2
≠０、Ｑsat2＞Ｑsat1）の順に切替える手段を持つこと
によりダイナミックレンジの向上が得られる。As shown in FIG. 3, as an effect of the accumulated charge switching means 5 of this embodiment (the solid-state image pickup device of FIG. 1), as shown in FIG. 3, a dynamic range (a range of incident light amount that can be expressed by accumulated charge amount) is obtained. Can be improved.
That is, the storable charge amount of the solid-state image sensor within one image pickup period is set to the first charge amount (Qsat1 ≠ 0) and the second charge amount (Qsat2).
An improvement of the dynamic range can be obtained by providing a means for switching in the order of ≠ 0, Qsat2> Qsat1).
【００１３】図４は、本発明の固体撮像装置の第２の実
施例の構成図で、図中の１は固体撮像素子、２は信号処
理手段、３はアナログ−デジタル変換手段、４は撮像素
子制御手段、５は蓄積電荷量切替手段、６はノイズ除去
手段、７は比較手段、８は記憶手段を示している。図４
において、固体撮像素子１、信号処理手段２、アナログ
−デジタル変換手段３、撮像素子制御手段４、蓄積電荷
量切替手段５は第１の実施例（図１）に示したものと同
じである。FIG. 4 is a block diagram of a second embodiment of the solid-state image pickup device of the present invention. In the figure, 1 is a solid-state image pickup device, 2 is a signal processing means, 3 is an analog-digital conversion means, and 4 is an image pickup device. Element control means, reference numeral 5 indicates accumulated charge amount switching means, 6 indicates noise removing means, 7 indicates comparing means, and 8 indicates storing means. Figure 4
In the above, the solid-state imaging device 1, the signal processing unit 2, the analog-digital conversion unit 3, the imaging device control unit 4, and the accumulated charge amount switching unit 5 are the same as those shown in the first embodiment (FIG. 1).
【００１４】記憶手段８には、固体撮像素子１の蓄積可
能電荷量をＱsat1に設定した場合、実際に蓄積される電
荷量をアナログ−デジタル変換したデータが記憶されて
おり、アナログ−デジタル変換手段３から出力されるデ
ータに対応する画素と、記憶手段８から出力されるデー
タに対応する画素が同じになるように、撮像素子制御手
段４によって動作制御される。比較手段７は、アナログ
−デジタル変換手段３と記憶手段８から入力されたデー
タの大きさを比較し、その結果を出力する機能を持つ。When the storable charge amount of the solid-state image pickup device 1 is set to Qsat1, the storage unit 8 stores data obtained by analog-digital conversion of the actually stored charge amount, and the analog-digital conversion unit. The operation is controlled by the image sensor control unit 4 so that the pixel corresponding to the data output from 3 and the pixel corresponding to the data output from the storage unit 8 become the same. The comparison means 7 has a function of comparing the sizes of the data input from the analog-digital conversion means 3 and the storage means 8 and outputting the result.
【００１５】ノイズ除去手段６は、比較手段７から入力
した比較結果に基づいて、アナログ−デジタル変換手段
３の出力が記憶手段８の出力より小さい場合は、アナロ
グ−デジタル変換手段３から入力したデータをそのまま
出力し、アナログ−デジタル変換手段３の出力が記憶手
段８の出力より大きい場合は、記憶手段８の出力データ
を基準にしてアナログ−デジタル変換手段３からの入力
データを補正して出力する。When the output of the analog-digital conversion means 3 is smaller than the output of the storage means 8 based on the comparison result input from the comparison means 7, the noise removal means 6 outputs the data input from the analog-digital conversion means 3. Is output as it is, and when the output of the analog-digital conversion means 3 is larger than the output of the storage means 8, the input data from the analog-digital conversion means 3 is corrected and output based on the output data of the storage means 8. .
【００１６】図４の固体撮像装置において、固体撮像素
子１の蓄積可能電荷量をＱsat1に設定した場合、実際に
蓄積される電荷量は正確にＱsat1とはならず、多少の誤
差（実際に蓄積された電荷量とＱsat1の差）を持つ。同
様なことは第１の実施例（図１の固体撮像装置）の固体
撮像素子１においても発生するが、本実施例ではこの誤
差を比較手段７、記憶手段８、撮像素子制御手段４によ
り各画素毎に検知し、ノイズ除去手段６でその誤差の大
きさに応じて加算もしくは減算することにより誤差を除
去し、Ｑsat1に揃えることができる。In the solid-state image pickup device of FIG. 4, when the storable charge amount of the solid-state image pickup element 1 is set to Qsat1, the actually accumulated charge amount does not become Qsat1 accurately, and some error (actual accumulation Difference between the amount of charge and Qsat1). The same thing occurs in the solid-state image pickup device 1 of the first embodiment (the solid-state image pickup device of FIG. 1), but in this embodiment, this error is caused by the comparison means 7, the storage means 8, and the image pickup device control means 4. It is possible to detect each pixel and add or subtract according to the magnitude of the error by the noise removing means 6 to remove the error and align it with Qsat1.
【００１７】本実施例（図４の固体撮像装置）の蓄積電
荷切替手段５の効果は第１の実施例と同様で、その上、
本実施例では比較手段７、ノイズ除去手段６、記憶手段
８を持つことにより、画質劣化を伴うことなくダイナミ
ックレンジの向上を得ることができる。The effect of the accumulated charge switching means 5 of this embodiment (the solid-state image pickup device of FIG. 4) is the same as that of the first embodiment, and moreover,
In the present embodiment, the comparison unit 7, the noise removal unit 6, and the storage unit 8 are provided, so that the dynamic range can be improved without deteriorating the image quality.
【００１８】本発明の第３の実施例の構成は第２の実施
例（図４の固体撮像装置）と同じである。ただし、蓄積
電荷切替手段５は、一撮像期間中の固体撮像素子１の電
荷可能蓄積量を、０（電荷の蓄積をしない）、Ｑsat1、
Ｑsat2の順に切替える機能を持つ。The configuration of the third embodiment of the present invention is the same as that of the second embodiment (solid-state image pickup device of FIG. 4). However, the accumulated charge switching means 5 sets the chargeable accumulation amount of the solid-state image sensor 1 during one image pickup period to 0 (no charge is accumulated), Qsat1,
It has a function to switch in the order of Qsat2.
【００１９】図４（本実施例）の固体撮像素子１におい
て、一撮像期間内に蓄積される電荷量と電荷蓄積時間の
関係は図５の実線（グラフｆ）に示され、一撮像期間内
に蓄積される電荷量と入射した光量の関係は図６の実線
（グラフｇ）に示される。図５，図６の点線のグラフ
（それぞれグラフｅ、グラフｈ）が、第２の実施例の固
体撮像装置の特性を示したものである。In the solid-state image pickup device 1 of FIG. 4 (this embodiment), the relationship between the amount of charges accumulated during one image pickup period and the charge accumulation time is shown by the solid line (graph f) in FIG. The solid line (graph g) in FIG. 6 shows the relationship between the amount of electric charge accumulated in and the amount of incident light. The dotted line graphs (graph e and graph h) in FIGS. 5 and 6 show the characteristics of the solid-state imaging device of the second embodiment.
【００２０】本実施例（図４の固体撮像装置）の蓄積電
荷切替手段５の効果として、図６に示される通り、第１
の実施例に対してダイナミックレンジ（蓄積電荷量で表
現できる入射光量の範囲）の大きさを能動的に変化させ
ることができる。また、図５に示される通り、電荷蓄積
時間が短くなるため移動する被写体に対してブレの少な
い映像出力を得られる。As shown in FIG. 6, the first effect of the accumulated charge switching means 5 of this embodiment (the solid-state image pickup device of FIG. 4) is as follows.
With respect to the embodiment of FIG. 5, the size of the dynamic range (the range of the amount of incident light that can be expressed by the accumulated charge amount) can be actively changed. Further, as shown in FIG. 5, since the charge storage time is shortened, it is possible to obtain a video output with less blur for a moving subject.
【００２１】つまり、一撮像期間内に固体撮像素子の蓄
積可能電荷量を０（電荷の蓄積なし）、第１の電荷量
（Ｑsat1≠０）、第２の電荷量（Ｑsat2≠０、Ｑsat2＞
Ｑsat1）の順に切替える手段を持つことにより、ダイナ
ミックレンジの大きさを能動的に変化させることがで
き、また、電子シャッターの効果を伴うことができる。That is, the storable charge amount of the solid-state image sensor within one image pickup period is 0 (no charge is accumulated), the first charge amount (Qsat1 ≠ 0), and the second charge amount (Qsat2 ≠ 0, Qsat2>
By providing a means for switching in the order of Qsat1), the size of the dynamic range can be actively changed, and the effect of the electronic shutter can be accompanied.
【００２２】なお、図１の固体撮像装置において、蓄積
電荷切替手段５が一撮像期間中の固体撮像素子１の電荷
可能蓄積量を、０（電荷の蓄積をしない）、Ｑsat1、Ｑ
sat2の順に切替える機能を持つことで、上記第３の実施
例と同様な効果が得られる。In the solid-state image pickup device of FIG. 1, the accumulated charge switching means 5 sets the chargeable accumulation amount of the solid-state image pickup device 1 during one image pickup period to 0 (no charge is accumulated), Qsat1, Q.
By having the function of switching in the order of sat2, the same effect as the third embodiment can be obtained.
【００２３】図７は、本発明の固体撮像装置の第４の実
施例の構成図で、図中の１は固体撮像素子、２は信号処
理手段、３はアナログ−デジタル変換手段、４は撮像素
子制御手段、５は蓄積電荷量切替手段、９はレジスタ付
比較手段、１０は切替制御手段を示している。図７にお
いて、固体撮像素子１、信号処理手段２、アナログ−デ
ジタル変換手段３、撮像素子制御手段４、蓄積電荷量切
替手段５は第１の実施例（図１）に示したものと同じで
ある。FIG. 7 is a block diagram of the fourth embodiment of the solid-state image pickup device of the present invention. In the figure, 1 is a solid-state image pickup device, 2 is a signal processing means, 3 is an analog-digital conversion means, and 4 is an image pickup device. Element control means 5, reference numeral 5 is a stored charge amount switching means, 9 is a register-equipped comparison means, and 10 is a switching control means. In FIG. 7, the solid-state image pickup device 1, the signal processing unit 2, the analog-digital conversion unit 3, the image pickup device control unit 4, and the accumulated charge amount switching unit 5 are the same as those shown in the first embodiment (FIG. 1). is there.
【００２４】レジスタ付比較手段９は、その内部のレジ
スタにアナログ−デジタル変換手段３の出力の上限を示
す基準データを持ち、その保持する基準データとアナロ
グ−デジタル変換手段３からの入力データの大きさを比
較し、結果を切替制御手段１０に出力する。The register-equipped comparison means 9 has reference data indicating the upper limit of the output of the analog-digital conversion means 3 in its internal register, and the reference data held therein and the size of the input data from the analog-digital conversion means 3. And the result is output to the switching control means 10.
【００２５】切替制御手段１０は、レジスタ付比較手段
９からの入力をもとに蓄積電荷量切替手段５を制御する
ための信号を出力する。蓄積電荷量切替手段５は切替制
御手段１０からの入力によって、固体撮像素子１の蓄積
電荷量がＱsat1からＱsat2に切り替わる時間、または、
固体撮像素子１での蓄積電荷量Ｑsat1の大きさを変化さ
せる。The switching control means 10 outputs a signal for controlling the accumulated charge amount switching means 5 based on the input from the comparing means with register 9. The accumulated charge amount switching means 5 receives the input from the switching control means 10, and the time when the accumulated charge amount of the solid-state imaging device 1 is switched from Qsat1 to Qsat2, or
The magnitude of the accumulated charge amount Qsat1 in the solid-state image sensor 1 is changed.
【００２６】本実施例（図７の固体撮像装置）におい
て、アナログ−デジタル変換手段３の出力が常にレジス
タ付比較手段９に保持される基準データよりも大きくな
らないように、切替制御手段１０が固体撮像素子１のダ
イナミックレンジを変化させ、固体撮像素子１に入射し
た映像に必要なダイナミックレンジ（蓄積電荷量で表現
できる入射光量の範囲）を能動的に実現する。In the present embodiment (the solid-state image pickup device of FIG. 7), the switching control means 10 is a solid state so that the output of the analog-digital conversion means 3 does not always become larger than the reference data held in the comparison means 9 with a register. The dynamic range of the image pickup device 1 is changed to actively realize the dynamic range required for an image incident on the solid-state image pickup device 1 (range of incident light amount that can be expressed by the accumulated charge amount).
【００２７】図７（本実施例）の切替制御手段１０が蓄
積電荷量切替手段５を制御して、固体撮像素子１の蓄積
電荷量がＱsat1からＱsat2に切り替わる時間を変化させ
た場合の、固体撮像素子１において、一撮像期間内に蓄
積される電荷量と電荷蓄積時間の関係は図８の実線（グ
ラフｊ）に示され、一撮像期間内に蓄積される電荷量と
入射した光量の関係は図９の実線（グラフｌ）に示され
る。図８，図９の点線のグラフ（それぞれグラフｉ、グ
ラフｋ）が、第１の実施例の固体撮像装置の特性を示し
たものである。The switching control means 10 of FIG. 7 (this embodiment) controls the accumulated charge amount switching means 5 to change the time when the accumulated charge amount of the solid-state image sensor 1 switches from Qsat1 to Qsat2. The solid line (graph j) in FIG. 8 shows the relationship between the amount of charge accumulated in one image pickup period and the charge accumulation time in the image sensor 1, and shows the relationship between the amount of charge accumulated in one image pickup period and the amount of incident light. Is shown by the solid line (graph 1) in FIG. The dotted line graphs (graph i and graph k) in FIGS. 8 and 9 show the characteristics of the solid-state imaging device of the first embodiment.
【００２８】本実施例（図７の固体撮像装置）のレジス
タ付比較手段９、切替制御手段１０の効果として、図９
に示される通り、第１の実施例に対してダイナミックレ
ンジ（蓄積電荷量で表現できる入射光量の範囲）の大き
さを能動的に変化させることができる。つまり、固体撮
像装置の出力レベルが基準レベル以上である時に制御信
号を出力する比較手段（レジスタ付比較手段９）と、比
較手段出力により蓄積電荷量切替時間を制御する手段
（切替制御手段１０）を有することで、入射した映像に
必要なダイナミックレンジを能動的に実現することがで
きる。As an effect of the comparison means 9 with a register and the switching control means 10 of the present embodiment (the solid-state image pickup device of FIG. 7), FIG.
As shown in (1), the size of the dynamic range (the range of the amount of incident light that can be expressed by the accumulated charge amount) can be actively changed with respect to the first embodiment. That is, comparing means (comparing means with register 9) that outputs a control signal when the output level of the solid-state imaging device is equal to or higher than the reference level, and means for controlling the accumulated charge amount switching time by the output of the comparing means (switching control means 10). With the above, it is possible to actively realize a dynamic range necessary for an incident image.
【００２９】図７（本実施例）の切替制御手段１０が蓄
積電荷量切替手段５を制御して、固体撮像素子１の蓄積
電荷量Ｑsat1の大きさを変化させた場合の、固体撮像素
子１における、一撮像期間内に蓄積される電荷量と電荷
蓄積時間の関係は図１０の実線（グラフｍ）に示され、
一撮像期間内に蓄積される電荷量と入射した光量の関係
は図１１の実線（グラフｏ）に示される。図１０，図１
１の点線のグラフ（それぞれグラフｎ、グラフｐ）が、
第１の実施例の固体撮像装置の特性を示したものであ
る。The solid-state image pickup device 1 in the case where the switching control means 10 of FIG. 7 (this embodiment) controls the accumulated charge amount switching means 5 to change the amount of the accumulated charge amount Qsat1 of the solid-state image pickup device 1 In FIG. 10, the relationship between the charge amount accumulated in one imaging period and the charge accumulation time is shown by the solid line (graph m) in FIG.
The relationship between the amount of charge accumulated in one imaging period and the amount of incident light is shown by the solid line (graph o) in FIG. 10 and 1
The dotted line graphs of 1 (graph n and graph p, respectively)
6 illustrates characteristics of the solid-state imaging device according to the first embodiment.
【００３０】本実施例（図７の固体撮像装置）のレジス
タ付比較手段９、切替制御手段１０の効果として、図１
１に示される通り、第１の実施例に対してダイナミック
レンジ（蓄積電荷量で表現できる入射光量の範囲）の大
きさを能動的に変化させることができる。つまり、固体
撮像装置の出力レベルが基準レベル以上である時に制御
信号を出力する比較手段（レジスタ付比較手段９）と、
比較手段出力によりＱsat1の大きさを制御する手段（切
替制御手段１０）を有することで、入射した映像に必要
なダイナミックレンジを能動的に実現することができ
る。As an effect of the comparison means 9 with a register and the switching control means 10 of the present embodiment (the solid-state image pickup device of FIG. 7), FIG.
As shown in FIG. 1, the size of the dynamic range (the range of the incident light amount that can be expressed by the accumulated charge amount) can be actively changed with respect to the first embodiment. That is, a comparison unit (comparison unit with register 9) that outputs a control signal when the output level of the solid-state imaging device is equal to or higher than the reference level,
By having a means (switch control means 10) for controlling the size of Qsat1 by the output of the comparison means, it is possible to actively realize the dynamic range required for the incident image.
【００３１】図１２は、本発明の固体撮像装置の第５の
実施例の構成図で、図中の１は固体撮像素子、２は信号
処理手段、３はアナログ−デジタル変換手段、４は撮像
素子制御手段、５は蓄積電荷量切替手段、６はノイズ除
去手段、７は比較手段、８は記憶手段、１１は温度セン
サー、１２は記憶手段、１３は加算手段を示している。
図１２において、固体撮像素子１、信号処理手段２、ア
ナログ−デジタル変換手段３、撮像素子制御手段４、蓄
積電荷量切替手段５、ノイズ除去手段６、比較手段７、
記憶手段８は第２の実施例（図４）に示したものと同じ
である。ただし、比較手段７はアナログ−デジタル変換
手段３と加算手段１３から入力されたデータの大きさを
比較し、その結果を出力する。FIG. 12 is a block diagram of the fifth embodiment of the solid-state image pickup device of the present invention. In the figure, 1 is a solid-state image pickup device, 2 is a signal processing means, 3 is an analog-digital conversion means, and 4 is an image pickup device. Element control means, 5 is an accumulated charge amount switching means, 6 is a noise removing means, 7 is a comparing means, 8 is a storing means, 11 is a temperature sensor, 12 is a storing means, and 13 is an adding means.
In FIG. 12, the solid-state imaging device 1, the signal processing unit 2, the analog-digital conversion unit 3, the imaging device control unit 4, the accumulated charge amount switching unit 5, the noise removal unit 6, the comparison unit 7,
The storage means 8 is the same as that shown in the second embodiment (FIG. 4). However, the comparison means 7 compares the sizes of the data input from the analog-digital conversion means 3 and the addition means 13, and outputs the result.
【００３２】温度センサー１１は固体撮像素子１または
その周辺の温度を測定し、記憶手段１２は保持している
変換表に基づいて、温度センサー１１から入力された温
度データに対応する補正系数を出力する。記憶手段１２
から出力された補正系数と記憶手段８から出力されたデ
ータは加算手段１３において加算され、比較手段７には
加算手段１３の加算結果が入力される。The temperature sensor 11 measures the temperature of the solid-state image pickup device 1 or its surroundings, and the storage means 12 outputs a correction coefficient corresponding to the temperature data input from the temperature sensor 11 based on the conversion table held therein. To do. Storage means 12
The correction coefficient output from the storage unit 8 and the data output from the storage unit 8 are added by the addition unit 13, and the addition result of the addition unit 13 is input to the comparison unit 7.
【００３３】図１２において、固体撮像素子１の蓄積可
能電荷量をＱsat1に設定した時に実際に蓄積される電荷
量が、固体撮像素子１または固体撮像素子１の周辺温度
によって変化した場合、記憶手段８に記憶されているデ
ータはノイズ除去手段６における基準値としての意味を
なさなくなるため、温度センサー１１、記憶手段１２、
加算手段１３によって、記憶手段８に記憶されているデ
ータを温度特性に基づいて補正する。In FIG. 12, when the amount of charge that can be accumulated in the solid-state image sensor 1 is set to Qsat1 and the amount of charge actually accumulated changes depending on the solid-state image sensor 1 or the ambient temperature of the solid-state image sensor 1, the storage means Since the data stored in 8 becomes meaningless as the reference value in the noise removing means 6, the temperature sensor 11, the storage means 12,
The addition means 13 corrects the data stored in the storage means 8 based on the temperature characteristics.
【００３４】本実施例（図１２の固体撮像装置）による
と、温度によって特性の変化する固体撮像素子を用いて
も、画質劣化を伴うことなくダイナミックレンジの向上
を得ることができる。According to this embodiment (the solid-state image pickup device of FIG. 12), even if a solid-state image pickup element whose characteristics change with temperature is used, the dynamic range can be improved without deteriorating the image quality.
【００３５】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から除外するものではな
い。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００３６】[0036]
【発明の効果】以上詳述した通り本発明によれば、従来
の固体撮像装置に対し、同じＣＣＤを用いて、入射光を
蓄積電荷量で一意に表現することができる範囲が大きく
なる。つまり、固体撮像装置において入射光に対するダ
イナミックレンジをより大きく得ることができるもので
あり、また、固体撮像装置において入射光に対して必要
なだけのダイナミックレンジの大きさを設定することが
できるものであり、その効果は大きい。As described above in detail, according to the present invention, the range in which the incident light can be uniquely expressed by the accumulated charge amount using the same CCD as in the conventional solid-state image pickup device is increased. That is, it is possible to obtain a larger dynamic range for incident light in the solid-state imaging device, and it is possible to set a required dynamic range for the incident light in the solid-state imaging device. Yes, the effect is great.
【図１】本発明の第１の実施例の固体撮像装置の構成を
示すブロック図FIG. 1 is a block diagram showing a configuration of a solid-state imaging device according to a first embodiment of the present invention.
【図２】本発明の第１の実施例の固体撮像装置のＣＣＤ
における一撮像期間内に蓄積される電荷量と電荷蓄積時
間の関係を表す特性図FIG. 2 is a CCD of the solid-state imaging device according to the first embodiment of the present invention.
Chart showing the relationship between the amount of charge accumulated in one imaging period and the charge accumulation time
【図３】本発明の第１の実施例の固体撮像装置のＣＣＤ
における一撮像期間内に蓄積される 電荷量と入射した
光量の関係を表す特性図FIG. 3 is a CCD of the solid-state imaging device according to the first embodiment of the present invention.
Characteristic diagram showing the relationship between the amount of charge accumulated in one imaging period and the amount of incident light
【図４】本発明の第２および第３の実施例の固体撮像装
置の構成を示すブロック図FIG. 4 is a block diagram showing a configuration of a solid-state imaging device according to second and third embodiments of the present invention.
【図５】本発明の第３の実施例の固体撮像装置のＣＣＤ
における一撮像期間内に蓄積される電荷量と電荷蓄積時
間の関係を表す特性図FIG. 5 is a CCD of a solid-state image pickup device according to a third embodiment of the present invention.
Chart showing the relationship between the amount of charge accumulated in one imaging period and the charge accumulation time
【図６】本発明の第３の実施例の固体撮像装置のＣＣＤ
における一撮像期間内に蓄積される 電荷量と入射した
光量の関係を表す特性図FIG. 6 is a CCD of a solid-state image pickup device according to a third embodiment of the present invention.
Characteristic diagram showing the relationship between the amount of charge accumulated in one imaging period and the amount of incident light
【図７】本発明の第４の実施例の固体撮像装置の構成を
示すブロック図FIG. 7 is a block diagram showing a configuration of a solid-state imaging device according to a fourth embodiment of the present invention.
【図８】本発明の第４の実施例の固体撮像装置のＣＣＤ
における一撮像期間内に蓄積される電荷量と電荷蓄積時
間の関係を表す特性図FIG. 8 is a CCD of a solid-state image pickup device according to a fourth embodiment of the present invention.
Chart showing the relationship between the amount of charge accumulated in one imaging period and the charge accumulation time
【図９】本発明の第４の実施例の固体撮像装置のＣＣＤ
における一撮像期間内に蓄積される 電荷量と入射した
光量の関係を表す特性図FIG. 9 is a CCD of a solid-state image pickup device according to a fourth embodiment of the present invention.
Characteristic diagram showing the relationship between the amount of charge accumulated in one imaging period and the amount of incident light
【図１０】本発明の第４の実施例の固体撮像装置のＣＣ
Ｄにおける一撮像期間内に蓄積される電荷量と電荷蓄積
時間の関係を表す特性図FIG. 10 is a CC of the solid-state imaging device according to the fourth embodiment of the present invention.
A characteristic diagram showing the relationship between the amount of charges accumulated in one imaging period in D and the charge accumulation time.
【図１１】本発明の第４の実施例の固体撮像装置のＣＣ
Ｄにおける一撮像期間内に蓄積される 電荷量と入射し
た光量の関係を表す特性図FIG. 11 is a CC of the solid-state imaging device according to the fourth embodiment of the present invention.
A characteristic diagram showing the relationship between the amount of charge accumulated in one imaging period in D and the amount of incident light
【図１２】本発明の第５の実施例の固体撮像装置の構成
を示すブロック図FIG. 12 is a block diagram showing a configuration of a solid-state imaging device according to a fifth embodiment of the present invention.
【図１３】従来の固体撮像装置の構成例を示すブロック
図FIG. 13 is a block diagram showing a configuration example of a conventional solid-state imaging device.
【図１４】従来の固体撮像装置のＣＣＤにおける一撮像
期間内に蓄積される電荷量と電荷蓄積時間の関係を表す
特性図FIG. 14 is a characteristic diagram showing the relationship between the amount of charge accumulated in one image pickup period and the charge accumulation time in the CCD of the conventional solid-state image pickup device.
【図１５】従来の固体撮像装置のＣＣＤにおける一撮像
期間内に蓄積される電荷量と入射した光量の関係を表す
グラフFIG. 15 is a graph showing the relationship between the amount of charge accumulated in one image pickup period and the amount of incident light in the CCD of the conventional solid-state image pickup device.
１ 固体撮像素子 ２ 信号処理手段 ３ アナログ−デジタル変換手段 ４ 撮像素子制御手段 ５ 蓄積電荷切替手段 ６ ノイズ除去手段 ７ 比較手段 ８ 記憶手段 ９ レジスタ付比較手段 １０ 切替制御手段 １１ 温度センサー １２ 記憶手段 １３ 加算手段 DESCRIPTION OF SYMBOLS 1 Solid-state image sensor 2 Signal processing means 3 Analog-digital conversion means 4 Image sensor control means 5 Accumulated charge switching means 6 Noise removal means 7 Comparison means 8 Storage means 9 Registered comparison means 10 Switching control means 11 Temperature sensor 12 Storage means 13 Addition means
Claims (11)
子と、前記固体撮像素子の動作制御する手段と、一撮像
期間内に前記蓄積可能電荷量を少なくとも第１の電荷量
（Ｑsat1≠０）と、第２の電荷量（Ｑsat2≠０、Ｑsat2
＞Ｑsat1）に切替える蓄積電荷量切替手段とを有し、前
記蓄積可能電荷量切替を一撮像期間内においてＱsat1、
Ｑsat2の順に行うことを特徴とする固体撮像装置。1. A solid-state image sensor capable of controlling the storable charge amount, a means for controlling the operation of the solid-state image sensor, and a storable charge amount of at least a first charge amount (Qsat1 ≠ 0) within one imaging period. ) And the second charge amount (Qsat2 ≠ 0, Qsat2
> Qsat1), the accumulated charge amount switching means is switched to Qsat1, Qsat1 within one imaging period.
A solid-state imaging device characterized by performing Qsat2 in order.
作制御する手段と、前記固体撮像素子の出力信号レベル
が基準レベル以上である時に制御信号を出力する比較手
段と、前記比較手段出力により前記固体撮像素子の出力
信号に補正を加える手段を有する固体撮像装置。2. A solid-state image sensor, means for controlling the operation of the solid-state image sensor, comparing means for outputting a control signal when the output signal level of the solid-state image sensor is equal to or higher than a reference level, and output by the comparing means. A solid-state image pickup device having means for correcting an output signal of the solid-state image pickup device.
電荷量に相当する信号レベルであることを特徴とする請
求項２記載の固体撮像装置。3. The solid-state imaging device according to claim 2, wherein the reference level is a signal level corresponding to the amount of charge that can be accumulated in the solid-state imaging device.
可能電荷量に相当する信号レベルのデータを保持する手
段から供給されることを特徴とする請求項３記載の固体
撮像装置。4. The solid-state image pickup device according to claim 3, wherein the reference level is supplied from means for holding data of a signal level corresponding to the amount of charge that can be accumulated in the solid-state image pickup element.
子と、前記固体撮像素子の動作制御する手段と、一撮像
期間内に前記蓄積可能電荷量を少なくとも第１の電荷量
（Ｑsat1≠０）と、第２の電荷量（Ｑsat2≠０、Ｑsat2
＞Ｑsat1）に切替える蓄積電荷量切替手段とを有し、前
記蓄積可能電荷量切替が一撮像期間内において、Ｑsat
1、Ｑsat2の順に行なわれ、かつ、前記固体撮像素子の
出力信号レベルが基準レベル以上である時に制御信号を
出力する比較手段と、前記比較手段出力により前記固体
撮像素子の出力信号に補正を加える手段と、前記基準レ
ベルを供給するために前記固体撮像素子の第１の電荷量
（Ｑsat1≠０）に対応するデータを保持する手段を有す
る固体撮像装置。5. A solid-state image sensor capable of controlling the storable charge amount, a means for controlling the operation of the solid-state image sensor, and a storable charge amount of at least a first charge amount (Qsat1 ≠ 0) within one imaging period. ) And the second charge amount (Qsat2 ≠ 0, Qsat2
> Qsat1), and the accumulated charge amount switching means is switched to Qsat within one imaging period.
1. Comparing means for outputting a control signal when the output signal level of the solid-state image sensor is equal to or higher than a reference level, and the correction is performed on the output signal of the solid-state image sensor by the output of the comparing means. A solid-state imaging device comprising: means and means for holding data corresponding to a first charge amount (Qsat1 ≠ 0) of the solid-state imaging device for supplying the reference level.
子と、前記固体撮像素子の動作制御する手段と、一撮像
期間内に前記蓄積可能電荷量を少なくとも０（電荷の蓄
積なし）と、第１の電荷量（Ｑsat1≠０）と、第２の電
荷量（Ｑsat2≠０、Ｑsat2＞Ｑsat1）に切替える蓄積電
荷量切替手段とを有し、前記蓄積可能電荷量切替が一撮
像期間内において、０（電荷の蓄積なし）、Ｑsat1、Ｑ
sat2の順に行われるようにしたことを特徴とする請求項
１または請求項５記載の固体撮像装置。6. A solid-state image sensor capable of controlling the storable charge amount, a means for controlling the operation of the solid-state image sensor, and the storable charge amount being at least 0 (no charge is accumulated) within one imaging period. A stored charge amount switching unit that switches between a first charge amount (Qsat1 ≠ 0) and a second charge amount (Qsat2 ≠ 0, Qsat2> Qsat1) is provided, and the storable charge amount is switched within one imaging period. , 0 (no charge accumulation), Qsat1, Q
The solid-state imaging device according to claim 1 or 5, wherein the steps are performed in the order of sat2.
レベルが基準レベル以上である時に制御信号を出力する
比較手段と、前記比較手段出力により蓄積電荷量切替時
間を制御する手段を有することを特徴とする請求項１ま
たは請求項５または請求項６記載の固体撮像装置。7. A comparison means for outputting a control signal when the output level of the solid-state imaging device or the solid-state imaging device is equal to or higher than a reference level, and means for controlling the accumulated charge amount switching time by the output of the comparison means. The solid-state imaging device according to claim 1, 5, or 6.
レベルが基準レベル以上である時に制御信号を出力する
比較手段と、前記比較手段出力によりＱsat1の大きさを
制御する手段を有することを特徴とする請求項１または
請求項５または請求項６記載の固体撮像装置。8. A comparison means for outputting a control signal when the output level of the solid-state imaging device or the solid-state imaging device is equal to or higher than a reference level, and means for controlling the magnitude of Qsat1 by the output of the comparison means. The solid-state imaging device according to claim 1, 5, or 6.
像装置の最大出力レベルとしたことを特徴とする請求項
７または請求項８記載の固体撮像装置。9. The solid-state imaging device according to claim 7, wherein the reference level is the maximum output level of the solid-state imaging device or the solid-state imaging device.
周辺の温度を計測する手段と、前記温度の計測手段の出
力信号により、前記固体撮像素子の出力信号を補正する
手段とを有することを特徴とする請求項１、請求項５、
請求項６、請求項７または請求項８記載の固体撮像装
置。10. A solid-state image sensor or means for measuring a temperature around the solid-state image sensor, and means for correcting an output signal of the solid-state image sensor by an output signal of the temperature measuring means. Claim 1, Claim 5,
The solid-state imaging device according to claim 6, claim 7, or claim 8.
とする請求項１または請求項５記載の固体撮像装置。11. The solid-state imaging device according to claim 1, wherein Qsat2 is set to the maximum storage amount.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6206755A JPH089260A (en) | 1994-04-19 | 1994-08-31 | Solid-state image pickup device |
| US08/521,970 US5642163A (en) | 1994-08-31 | 1995-08-31 | Imaging apparatus for switching the accumulative electric charge of an image pickup device |
| DE69517375T DE69517375T2 (en) | 1994-08-31 | 1995-08-31 | Imaging device with a wide dynamic range |
| EP95306086A EP0700204B1 (en) | 1994-08-31 | 1995-08-31 | Imaging apparatus having a broad dynamic range |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8001794 | 1994-04-19 | ||
| JP6-80017 | 1994-04-19 | ||
| JP6206755A JPH089260A (en) | 1994-04-19 | 1994-08-31 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH089260A true JPH089260A (en) | 1996-01-12 |
Family
ID=26421043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6206755A Pending JPH089260A (en) | 1994-04-19 | 1994-08-31 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH089260A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100801427B1 (en) * | 2006-08-03 | 2008-02-05 | 엘지이노텍 주식회사 | Method and apparatus for improving back light image by altering gamma knee point in cmos sensor |
-
1994
- 1994-08-31 JP JP6206755A patent/JPH089260A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100801427B1 (en) * | 2006-08-03 | 2008-02-05 | 엘지이노텍 주식회사 | Method and apparatus for improving back light image by altering gamma knee point in cmos sensor |
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