JPH0888097A - Matching circuit for plasma device - Google Patents
Matching circuit for plasma deviceInfo
- Publication number
- JPH0888097A JPH0888097A JP6221660A JP22166094A JPH0888097A JP H0888097 A JPH0888097 A JP H0888097A JP 6221660 A JP6221660 A JP 6221660A JP 22166094 A JP22166094 A JP 22166094A JP H0888097 A JPH0888097 A JP H0888097A
- Authority
- JP
- Japan
- Prior art keywords
- load
- variable capacitor
- coil
- capacitor
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は誘導結合型プラズマ装置
用のマッチング回路に関する。誘導結合型プラズマエッ
チング装置は, 無磁場で且つ数mTorr から数10mTorrの
低圧力下で, 大きな領域に且つ均一な高密度プラズマが
得られるので，従来多用されている容量結合型プラズマ
装置に代わって, 最近特に注目されている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matching circuit for an inductively coupled plasma device. Since the inductively coupled plasma etching system can obtain a uniform high density plasma in a large area under a low pressure of several mTorr to several tens of mTorr without a magnetic field, it replaces the capacitively coupled plasma system which has been widely used in the past. Recently, it has attracted a lot of attention.
【０００２】[0002]
【従来の技術】誘導結合型プラズマ装置は, 電源と誘導
的に且つ容量的に結合しているため,電源と負荷間で共
振が起こりやすい。そのために, 負荷インピーダンス
は, 電源インピーダンス50Ωより, かなり小さい値から
かなり大きい値まで広い範囲で変化する。2. Description of the Related Art Since an inductively coupled plasma device is inductively and capacitively coupled to a power source, resonance easily occurs between the power source and the load. Therefore, the load impedance changes in a wide range from a value very small to a value very large than the source impedance 50Ω.
【０００３】従来の平行平板型プラズマ装置のような容
量性負荷用のマッチング回路は, 負荷側のインピーダン
スが電源インピーダンスより小さい場合に対して構成さ
れており，これと同一の回路構成により, 上記のような
幅広い範囲の負荷に対してマッチングをとることは困難
である。A matching circuit for a capacitive load such as a conventional parallel plate type plasma device is constructed for the case where the impedance on the load side is smaller than the power source impedance. With the same circuit configuration, It is difficult to match such a wide range of loads.
【０００４】図５は容量性負荷に対するマッチング回路
例を示す図である。容量性負荷56は，その抵抗成分の値
が電源51のそれよりも小さい。従って，図示のように電
源に並列に可変コンデンサ52を接続して, 電源の抵抗成
分を負荷と同じになるまで下げる。次いで, 電源, 負荷
間にインダクタ53及び可変コンデンサ54が直列接続され
た位相調節回路により，電源, 負荷間のリアクタンス成
分をキャンセルする。FIG. 5 is a diagram showing an example of a matching circuit for a capacitive load. The value of the resistance component of the capacitive load 56 is smaller than that of the power source 51. Therefore, as shown in the figure, the variable capacitor 52 is connected in parallel to the power supply, and the resistance component of the power supply is lowered until it becomes the same as the load. Next, the reactance component between the power supply and the load is canceled by the phase adjustment circuit in which the inductor 53 and variable capacitor 54 are connected in series between the power supply and the load.
【０００５】また，整合領域を拡げるために, 負荷に並
列にコンデンサ55を接続する場合もある。図６(A),(B)
は誘導性負荷に対する従来のマッチング回路例を示す図
である。Further, in order to expand the matching area, a capacitor 55 may be connected in parallel with the load. 6 (A), (B)
FIG. 6 is a diagram showing an example of a conventional matching circuit for an inductive load.
【０００６】図６(A) は，負荷のインダクタンスが小さ
く，容量成分がインダクタンスと同程度の場合のマッチ
ング回路例を示す。この場合は，電源61と負荷64に並列
接続された可変コンデンサ62の値を調整することにより
マッチングをとることができる。FIG. 6A shows an example of a matching circuit in the case where the load inductance is small and the capacitance component is approximately the same as the inductance. In this case, matching can be achieved by adjusting the value of the variable capacitor 62 connected in parallel to the power supply 61 and the load 64.
【０００７】図６(B) は負荷のインダクタンスが大きい
場合のマッチング回路例を示す。この場合は誘導加熱型
プラズマ装置等の誘導性負荷に相当し，負荷のインダク
タンス成分を可変コンデンサ63でキャンセルし，その後
は図６(A) の場合と同様に調整する。FIG. 6B shows an example of a matching circuit when the load inductance is large. In this case, this corresponds to an inductive load such as an induction heating type plasma device, and the inductance component of the load is canceled by the variable capacitor 63, and thereafter adjustment is performed in the same manner as in the case of FIG. 6 (A).
【０００８】しかし，いずれの場合も, 負荷のインピー
ダンスが電源インピーダンスよりも小さい場合に限られ
る。従って, 負荷インピーダンスの抵抗成分が大きい場
合に対応することができない。However, in any case, it is limited to the case where the load impedance is smaller than the power source impedance. Therefore, it cannot cope with the case where the resistance component of the load impedance is large.
【０００９】[0009]
【発明が解決しようとする課題】本発明は負荷インピー
ダンスの変動の大きい誘導結合型プラズマ装置（誘導性
負荷）に対するマッチング回路の提供を目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a matching circuit for an inductively coupled plasma device (inductive load) whose load impedance varies greatly.
【００１０】[0010]
【課題を解決するための手段】上記課題の解決は， １）高周波電源と誘導結合型プラズマ負荷との間に, 直
列にコイルと第１の可変コンデンサを接続し，該第１の
可変コンデンサと該負荷の接続点から該電源に並列に第
２の可変コンデンサを接続してなるプラズマ装置用マッ
チング回路，あるいは ２）高周波電源と誘導結合型プラズマ負荷との間に, 直
列にコイルと第３の可変コンデンサを接続し，該コイル
と該第３の可変コンデンサの接続点から該電源に並列に
第２の可変コンデンサを接続してなるプラズマ装置用マ
ッチング回路，あるいは ３）高周波電源と誘導結合型プラズマ負荷との間に, 直
列にコイルと第１の可変コンデンサと第３の可変コンデ
ンサとを接続し，該第１の可変コンデンサと該第３の可
変コンデンサの接続点から該電源に並列に第２の可変コ
ンデンサを接続してなるプラズマ装置用マッチング回路
により達成される。Means for Solving the Problems To solve the above problems, 1) a coil and a first variable capacitor are connected in series between a high frequency power source and an inductively coupled plasma load, and the first variable capacitor and A matching circuit for a plasma device in which a second variable capacitor is connected in parallel to the power source from a connection point of the load, or 2) a coil and a third coil in series between the high frequency power source and the inductively coupled plasma load. A matching circuit for a plasma device in which a variable capacitor is connected and a second variable capacitor is connected in parallel to the power source from the connection point of the coil and the third variable capacitor, or 3) a high frequency power source and an inductively coupled plasma A coil, a first variable capacitor, and a third variable capacitor are connected in series between the load and the load, and the capacitor is connected from the connection point of the first variable capacitor and the third variable capacitor. It is achieved by the second formed by connecting a variable capacitor plasma device matching circuit in parallel.
【００１１】[0011]
【作用】図１は本発明の原理説明図である。図におい
て， 1は電源, 2はコイル (インダクタ), 3は第１の可
変コンデンサ, 4は第２の可変コンデンサ, 5は第３の
可変コンデンサ, 6は負荷である。FIG. 1 is a diagram for explaining the principle of the present invention. In the figure, 1 is a power supply, 2 is a coil (inductor), 3 is a first variable capacitor, 4 is a second variable capacitor, 5 is a third variable capacitor, and 6 is a load.
【００１２】純抵抗である電源インピーダンス50Ωの電
源に, コイル 2を直列に接続し，コイル 2及び電源に並
列に第２の可変コンデンサ 4を接続すると, 共振回路が
構成される。このような共振回路は図２に示されるよう
に，共振を起こす第２の可変コンデンサ 4の容量値より
大きい容量値の範囲で, 第２の可変コンデンサ 4の容量
値を変えることにより, 電源側の抵抗成分の値を50Ωよ
り, かなり小さい値からかなり大きい値まで広い範囲で
調整可能である。A resonance circuit is formed by connecting a coil 2 in series to a power supply having a power impedance of 50Ω which is a pure resistance and connecting a second variable capacitor 4 in parallel with the coil 2 and the power supply. As shown in Fig. 2, such a resonance circuit changes the capacitance value of the second variable capacitor 4 within the range of the capacitance value larger than the capacitance value of the second variable capacitor 4 which causes resonance. The value of the resistance component of 50 Ω can be adjusted in a wide range from a considerably small value to a considerably large value.
【００１３】負荷インピーダンスを抵抗成分にするため
の位相調整は, 第２の可変コンデンサ 4と負荷 6との間
に接続された第３の可変コンデンサ 5により調整する。
さらに, 第２の可変コンデンサ 4とコイル 2との間に接
続された第１の可変コンデンサ 3と第３の可変コンデン
サ 5により調整すれば, より広い範囲でマッチング調整
が可能である。Phase adjustment for making the load impedance a resistance component is performed by a third variable capacitor 5 connected between the second variable capacitor 4 and the load 6.
Furthermore, if adjustment is performed by the first variable capacitor 3 and the third variable capacitor 5 connected between the second variable capacitor 4 and the coil 2, matching adjustment can be performed in a wider range.
【００１４】このようにして，誘導結合型プラズマ装置
で，ガス種, ガス圧力, 印加電力等の処理条件で負荷イ
ンピーダンスが変化しても，本発明は広い範囲でマッチ
ング調整が可能である。As described above, in the inductively coupled plasma apparatus, even if the load impedance changes depending on the processing conditions such as gas species, gas pressure, and applied power, the present invention can perform matching adjustment in a wide range.
【００１５】[0015]
【実施例】図３は本発明の実施例の説明図である。図に
おいて， 1は周波数 3.4 MHzの高周波電源, 6は誘導結
合型プラズマ装置で，口径 500mm, 高さ 200mm, 厚さ 5
mmの石英製ベルジャの外周に, 厚さ 0.2mm, 幅10mm, 長
さ10m の銅帯を 2〜8 回巻いた。ここで，コイルの巻き
方は単位長当たりの巻数は変えていない。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 3 is an illustration of an embodiment of the present invention. In the figure, 1 is a high-frequency power source with a frequency of 3.4 MHz, 6 is an inductively coupled plasma device, and the diameter is 500 mm, the height is 200 mm, and the thickness is 5 mm.
A copper band having a thickness of 0.2 mm, a width of 10 mm and a length of 10 m was wound 2 to 8 times on the outer circumference of a quartz bell jar of mm. Here, the coil winding method does not change the number of turns per unit length.
【００１６】コイル 2及び第１の可変コンデンサ 3，第
２の可変コンデンサ 4, 第３の可変コンデンサ 5は誘導
結合型プラズマ装置のマッチング回路素子である。コイ
ル 2は, 水冷可能な銅パイプで, そのインダクタンスの
値は16μH である。可変コンデンサ 3，4, 5は耐圧 3 k
V の真空可変コンデンサであり，その可変範囲は 3，4
が 300〜2000 pF, 5が 100〜300 pFである。The coil 2, the first variable capacitor 3, the second variable capacitor 4, and the third variable capacitor 5 are matching circuit elements of the inductively coupled plasma device. Coil 2 is a water-coolable copper pipe and its inductance value is 16 μH. Variable capacitors 3, 4, 5 withstand voltage 3 k
It is a vacuum variable capacitor of V and its variable range is 3, 4
Is 300 to 2000 pF and 5 is 100 to 300 pF.
【００１７】以上の回路構成で，高周波電源 1の電力を
100〜3000 W, ガス種アルゴン(Ar), ガス圧力 1〜50 m
Torrの条件でプラズマを発生させ, 各条件に対する反射
電力を測定して, これが０になるように上記３つの可変
コンデンサを調整してマッチングをとった。With the above circuit configuration, the power of the high frequency power source 1
100 to 3000 W, gas type Argon (Ar), gas pressure 1 to 50 m
Plasma was generated under the conditions of Torr, the reflected power for each condition was measured, and the above three variable capacitors were adjusted so as to be 0, and matching was performed.
【００１８】図４は本発明の効果を示す図で，マッチン
グ調整が可能であったときの，電源の入力電力に対する
プラズマ（負荷）の抵抗成分の関係を示す。各条件は以
下の通りである。FIG. 4 is a diagram showing the effect of the present invention, showing the relationship of the resistance component of the plasma (load) with respect to the input power of the power supply when the matching adjustment is possible. Each condition is as follows.
【００１９】 条件 ガス圧力(mTorr) 負荷側コイル巻数 １ 50 5 ２ 20 5 ３ 10 5 ４ 10 4 ５ 10 2 ６ 10 8 図示のように，負荷インピーダンス（抵抗成分）が 0.1
〜300 Ωの範囲で, 同一回路構成のマッチング回路でマ
ッチング調整が可能である。Condition Gas pressure (mTorr) Number of coil windings on load side 1 50 5 2 20 5 3 10 5 4 10 4 5 10 2 6 10 8 As shown, the load impedance (resistance component) is 0.1
Matching adjustment is possible with matching circuits of the same circuit configuration within the range of ~ 300 Ω.
【００２０】[0020]
【発明の効果】本発明によれば，負荷インピーダンスの
変動の大きい誘導結合型プラズマ装置に対して，広い範
囲の負荷インピーダンスに対してマッチング調整が可能
となる。According to the present invention, it is possible to perform matching adjustment for a wide range of load impedance for an inductively coupled plasma device in which the load impedance fluctuates greatly.
【図１】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.
【図２】 並列共振の説明図FIG. 2 is an explanatory diagram of parallel resonance.
【図３】 本発明の実施例の説明図FIG. 3 is an explanatory diagram of an embodiment of the present invention.
【図４】 本発明の効果を説明する図FIG. 4 is a diagram for explaining the effect of the present invention.
【図５】 容量性負荷に対するマッチング回路例を示す
図FIG. 5 is a diagram showing an example of a matching circuit for a capacitive load.
【図６】 誘導性負荷に対する従来のマッチング回路例
を示す図FIG. 6 is a diagram showing an example of a conventional matching circuit for an inductive load.
1 高周波電源 2 コイル (インダクタ） 3 第１の可変コンデンサ 4 第２の可変コンデンサ 5 第３の可変コンデンサ 6 負荷（誘導結合型プラズマ装置） 1 high frequency power supply 2 coil (inductor) 3 first variable capacitor 4 second variable capacitor 5 third variable capacitor 6 load (inductively coupled plasma device)
Claims (3)
の間に, 直列にコイルと第１の可変コンデンサを接続
し，該第１の可変コンデンサと該負荷の接続点から該電
源に並列に第２の可変コンデンサを接続してなることを
特徴とするプラズマ装置用マッチング回路。1. A coil and a first variable capacitor are connected in series between a high frequency power source and an inductively coupled plasma load, and a coil is connected in parallel to the power source from a connection point of the first variable capacitor and the load. A matching circuit for a plasma device, which is configured by connecting two variable capacitors.
の間に, 直列にコイルと第３の可変コンデンサを接続
し，該コイルと該第３の可変コンデンサの接続点から該
電源に並列に第２の可変コンデンサを接続してなること
を特徴とするプラズマ装置用マッチング回路。2. A coil and a third variable capacitor are connected in series between a high frequency power source and an inductively coupled plasma load, and a coil and a third variable capacitor are connected in parallel to the power source from a connection point of the coil and the third variable capacitor. A matching circuit for a plasma device, which is configured by connecting two variable capacitors.
の間に, 直列にコイルと第１の可変コンデンサと第３の
可変コンデンサとを接続し，該第１の可変コンデンサと
該第３の可変コンデンサの接続点から該電源に並列に第
２の可変コンデンサを接続してなることを特徴とするプ
ラズマ装置用マッチング回路。3. A coil, a first variable capacitor and a third variable capacitor are connected in series between a high frequency power source and an inductively coupled plasma load, and the first variable capacitor and the third variable capacitor are connected. A matching circuit for a plasma device, comprising a second variable capacitor connected in parallel to the power source from a connection point of the capacitors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6221660A JPH0888097A (en) | 1994-09-16 | 1994-09-16 | Matching circuit for plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6221660A JPH0888097A (en) | 1994-09-16 | 1994-09-16 | Matching circuit for plasma device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0888097A true JPH0888097A (en) | 1996-04-02 |
Family
ID=16770268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6221660A Withdrawn JPH0888097A (en) | 1994-09-16 | 1994-09-16 | Matching circuit for plasma device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0888097A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1187271A (en) * | 1997-05-16 | 1999-03-30 | Applied Materials Inc | Use of variable impedance for controlling coil sputtering distribution |
| JPH11509976A (en) * | 1996-05-23 | 1999-08-31 | ラム リサーチ コーポレーション | Method and apparatus for controlling the reactive impedance of a matching network connected between an RF source and an RF plasma processor |
| US6475814B1 (en) * | 1998-02-26 | 2002-11-05 | Micron Technology, Inc. | Method for improved low pressure inductively coupled high density plasma reactor |
| JP2006139949A (en) * | 2004-11-10 | 2006-06-01 | Sumihide Ikenouchi | Impedance matching device and plasma treatment device using the same |
| JP2006179499A (en) * | 2006-02-20 | 2006-07-06 | Matsushita Electric Ind Co Ltd | Matching circuit, and method and device for plasma processing |
| JP2008516515A (en) * | 2004-10-11 | 2008-05-15 | アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド | Doherty amplifier using active phase splitter |
| WO2011062940A3 (en) * | 2009-11-17 | 2011-09-22 | Applied Materials, Inc. | Large area plasma processing chamber with at-electrode rf matching |
| JP4948703B2 (en) * | 1998-01-09 | 2012-06-06 | ラム リサーチ コーポレーション | High frequency electromagnetic field supply method and apparatus for minimizing plasma instability in a high frequency processor, and memory used in the high frequency electromagnetic field supply apparatus |
-
1994
- 1994-09-16 JP JP6221660A patent/JPH0888097A/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11509976A (en) * | 1996-05-23 | 1999-08-31 | ラム リサーチ コーポレーション | Method and apparatus for controlling the reactive impedance of a matching network connected between an RF source and an RF plasma processor |
| JPH1187271A (en) * | 1997-05-16 | 1999-03-30 | Applied Materials Inc | Use of variable impedance for controlling coil sputtering distribution |
| JP4948703B2 (en) * | 1998-01-09 | 2012-06-06 | ラム リサーチ コーポレーション | High frequency electromagnetic field supply method and apparatus for minimizing plasma instability in a high frequency processor, and memory used in the high frequency electromagnetic field supply apparatus |
| US6475814B1 (en) * | 1998-02-26 | 2002-11-05 | Micron Technology, Inc. | Method for improved low pressure inductively coupled high density plasma reactor |
| US6516742B1 (en) | 1998-02-26 | 2003-02-11 | Micron Technology, Inc. | Apparatus for improved low pressure inductively coupled high density plasma reactor |
| US6939813B2 (en) | 1998-02-26 | 2005-09-06 | Micron Technology, Inc. | Apparatus for improved low pressure inductively coupled high density plasma reactor |
| JP2008516515A (en) * | 2004-10-11 | 2008-05-15 | アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド | Doherty amplifier using active phase splitter |
| JP2006139949A (en) * | 2004-11-10 | 2006-06-01 | Sumihide Ikenouchi | Impedance matching device and plasma treatment device using the same |
| JP2006179499A (en) * | 2006-02-20 | 2006-07-06 | Matsushita Electric Ind Co Ltd | Matching circuit, and method and device for plasma processing |
| WO2011062940A3 (en) * | 2009-11-17 | 2011-09-22 | Applied Materials, Inc. | Large area plasma processing chamber with at-electrode rf matching |
| CN102598876A (en) * | 2009-11-17 | 2012-07-18 | 应用材料公司 | Large Area Plasma Processing Chamber With At-electrode Rf Matching |
| US8691047B2 (en) | 2009-11-17 | 2014-04-08 | Applied Materials, Inc. | Large area plasma processing chamber with at-electrode RF matching |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20011120 |