JPH0878363A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0878363A JPH0878363A JP20862094A JP20862094A JPH0878363A JP H0878363 A JPH0878363 A JP H0878363A JP 20862094 A JP20862094 A JP 20862094A JP 20862094 A JP20862094 A JP 20862094A JP H0878363 A JPH0878363 A JP H0878363A
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- Prior art keywords
- film
- blanket
- hydrogen
- partial pressure
- tin
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体基板上にブランケ
ットタングステン（Ｗ）膜を形成する方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a blanket tungsten (W) film on a semiconductor substrate.
【０００２】近年、半導体デバイスの高集積化、微細化
により、電極配線にも高融点金属膜、特に、ブランケッ
トＷ膜や選択成長Ｗ膜が多用されている。In recent years, due to high integration and miniaturization of semiconductor devices, refractory metal films, particularly blanket W films and selective growth W films, are often used for electrode wiring.
【０００３】[0003]
【従来の技術】図６は従来例の説明図である。図におい
て、31は半導体基板、32はＴｉ膜、33はＴｉＮ膜、34は
水素分子、35はＷ核、36はＷ膜、37はＴｉＦ膜である。2. Description of the Related Art FIG. 6 is an explanatory view of a conventional example. In the figure, 31 is a semiconductor substrate, 32 is a Ti film, 33 is a TiN film, 34 is a hydrogen molecule, 35 is a W nucleus, 36 is a W film, and 37 is a TiF film.
【０００４】現在、ブランケットＷ膜の成長は、通常初
期の核形成として六弗化タングステン（ＷＦ6 ）のシラ
ン（ＳｉＨ4 ）還元により表面に半導体膜、金属膜、絶
縁膜の混在する半導体基板上全面に薄い膜を形成する。At present, the blanket W film is usually grown on a semiconductor substrate in which a semiconductor film, a metal film and an insulating film are mixed on the surface by silane (SiH 4 ) reduction of tungsten hexafluoride (WF 6 ) as the initial nucleation. A thin film is formed on the entire surface.
【０００５】そして、Ｗの核を形成後、水素（Ｈ2 ）還
元により基板全面にブランケットＷ膜を被覆形成する。
この際、特にコンタクトホール埋め込みに用いる場合は
段差被覆性が重要になる。段差被覆性にはＷＦ6 の分圧
が高く、温度が低い方が良い。After forming W nuclei, a blanket W film is formed on the entire surface of the substrate by hydrogen (H 2 ) reduction.
At this time, step coverage is particularly important when used for filling contact holes. For the step coverage, it is better that the partial pressure of WF 6 is high and the temperature is low.
【０００６】通常は、下地にＴｉＮ膜を用いるが、ＷＦ
6 分圧を高くすると、つまり、図６（ａ）に示すよう
に、Ｈ2 の分圧が低い状態では、Ｗ核５が形成されてい
る部分では水素分子34は解離するが、ＴｉＮ膜33上では
解離しにくい。このため、ＴｉＮ膜33上でのＷ膜36の成
長は、ＷＦ6 →Ｗ＋６Ｆ- の反応が支配的となる。Usually, a TiN film is used as a base, but WF
When the partial pressure of 6 is increased, that is, when the partial pressure of H 2 is low, as shown in FIG. 6A, the hydrogen molecules 34 dissociate in the portion where the W nucleus 5 is formed, but the TiN film 33. Hard to dissociate above. Therefore, the growth of the W film 36 on the TiN film 33 is dominated by the reaction of WF 6 → W + 6F − .
【０００７】その結果、図６（ｂ）に示すように、解離
したＦイオン（Ｆ- ）がＴｉＮ膜33の中に潜り込み、下
地のＴｉ膜32と反応してＴｉの弗化物であるＴｉＦ膜37
を形成し、ＴｉＮ膜33が剥がれてしまう。[0007] As a result, as shown in FIG. 6 (b), dissociated F ion (F -) is slip in the TiN film 33, TiF film is fluorides Ti reacts with Ti film 32 underlying 37
And the TiN film 33 is peeled off.
【０００８】特に、低温の場合だとシラン還元時の反応
が悪く、図６（ａ）に示したように局所的に基板表面に
ＴｉＮ膜33が露出している場合があり、Ｗ膜36の成長時
に、ＷＦ6 が余っていることによりＴｉＮ膜33が剥がれ
やすい傾向にある。Particularly at low temperatures, the reaction at the time of silane reduction is poor, and the TiN film 33 may be locally exposed on the substrate surface as shown in FIG. At the time of growth, the TiN film 33 tends to peel off due to the excess WF 6 .
【０００９】本発明は、以上の点を鑑み、ブランケット
Ｗ膜成長時において下地のＴｉＮ膜が剥がれないＷ膜の
成長方法を提供する。In view of the above points, the present invention provides a W film growth method in which the underlying TiN film is not peeled off during blanket W film growth.
【００１０】[0010]
【課題を解決するための手段】図１は本発明の原理説明
図、図２はＷ膜成長レートと水素分圧の関係図（理論
値）である。FIG. 1 is a diagram for explaining the principle of the present invention, and FIG. 2 is a relationship diagram (theoretical value) between the W film growth rate and the hydrogen partial pressure.
【００１１】図において、１は半導体基板、２はＴｉ
膜、３はＴｉＮ膜、４は水素分子、５はＷ核、６はＷ膜
である。従来の処理条件で用いている水素分圧条件は、
図２に示すように、Ｗ膜の成長レートが水素分圧の１／
２乗に比例する領域Ｉの範囲内であり、このときは半導
体基板上での水素の解離反応が律則しているが、図６で
説明したように、ＴｉＮ膜上では水素が解離しにくい。In the figure, 1 is a semiconductor substrate, 2 is Ti
A film, 3 is a TiN film, 4 is a hydrogen molecule, 5 is a W nucleus, and 6 is a W film. The hydrogen partial pressure conditions used in conventional processing conditions are
As shown in FIG. 2, the growth rate of the W film is 1 / the hydrogen partial pressure.
It is within the range of the region I proportional to the square, and at this time, the dissociation reaction of hydrogen on the semiconductor substrate is a rule, but as described in FIG. 6, hydrogen is difficult to dissociate on the TiN film. .
【００１２】つまり、ＷＦ6 が反応の対象を求めて漂っ
ていることになり、これがＴｉＮ膜の表面に達すると、
ここで電子の授受が発生し、ＷＦ6 が分解してしまう。
そのためＦ原子は静電力でＴｉＮ膜中に引っ張り込まれ
るが、この際、ＴｉＮ膜とは反応せず、更に下層に存在
するＴｉ膜のＴｉ原子と反応する。ＴｉＦは常温で固体
であり、これが形成されると、ＴｉＮ膜が押し上げら
れ、剥がれることとなる。That is, the WF 6 is drifting in search of the reaction target, and when this reaches the surface of the TiN film,
Transfer of electrons occurs here, and WF 6 is decomposed.
Therefore, F atoms are pulled into the TiN film by electrostatic force, but at this time, they do not react with the TiN film, and further react with Ti atoms of the Ti film existing in the lower layer. TiF is solid at room temperature, and when it is formed, the TiN film is pushed up and peeled off.
【００１３】そこで、本発明では、図１（ａ）に示すよ
うに、半導体基板１上での水素の解離は確立の問題なの
で、水素分圧を上げてやることにより、水素分子４を増
やして、出来るだけ半導体基板１の表面に反応せずに余
るＷＦ6 ガスをなくそうとするものである。Therefore, in the present invention, as shown in FIG. 1A, since dissociation of hydrogen on the semiconductor substrate 1 is a matter of establishment, the hydrogen partial pressure is increased to increase the number of hydrogen molecules 4. As much as possible, the surface of the semiconductor substrate 1 is not reacted and the remaining WF 6 gas is removed.
【００１４】つまり、上記の問題解決するために、図１
（ｂ）に示すＷＦ6 成長時の水素分圧を上げてやり、余
剰ＷＦ6 をなくしてやるものとする。Ｗ膜の段差被覆性
はＷＦ6 の供給律則領域では劣っている。水素分圧を上
げながらＷＦ6 の反応律則領域で成膜してやる必要があ
る。That is, in order to solve the above problems, FIG.
The surplus WF 6 is eliminated by increasing the hydrogen partial pressure during the growth of WF 6 shown in (b). The step coverage of the W film is inferior in the supply regulation region of WF 6 . It is necessary to form a film in the reaction law region of WF 6 while increasing the hydrogen partial pressure.
【００１５】そこで、本発明の手段として、Ｗ膜の成長
レートから、水素の移動限界分圧を求めた上で、図２の
領域IIに相当するそれ以上の分圧領域で成膜する。すな
わち、本発明の目的は、半導体基板上へのブランケット
Ｗ膜の成長において、反応ガスとして用いる六弗化タン
グステンガスと水素ガスとの混合ガスの内、図２に示す
ような六弗化タングステンと水素の反応が六弗化タング
ステンの分解に対して支配的となる分圧比の領域まで水
素ガスの分圧を上げて、ブランケットＷ膜の成長を行う
ことにより達成される。Therefore, as a means of the present invention, after determining the hydrogen transfer limit partial pressure from the growth rate of the W film, the film is formed in a partial pressure region higher than that corresponding to the region II in FIG. That is, an object of the present invention is to use tungsten hexafluoride as shown in FIG. 2 in a mixed gas of tungsten hexafluoride gas and hydrogen gas used as a reaction gas in growing a blanket W film on a semiconductor substrate. This is achieved by increasing the partial pressure of hydrogen gas to a partial pressure ratio region where the reaction of hydrogen is dominant for the decomposition of tungsten hexafluoride and growing the blanket W film.
【００１６】[0016]
【作用】上記のように、本発明のＣＶＤ−Ｗ膜成長方法
を用いれば、この結果、ＴｉＮ膜上でのＷ膜の成長は、
図２に示すように、 ＷＦ6 ＋ ３Ｈ2 → Ｗ ＋ ６ＨＦ↑ が支配的になり、余剰のＷＦ6 がＴｉＮ膜の表面に到達
しないので、Ｗ膜は一様に均一な厚さで成長する。As described above, when the CVD-W film growth method of the present invention is used, as a result, the growth of the W film on the TiN film is
As shown in FIG. 2, since WF 6 + 3H 2 → W + 6HF ↑ becomes dominant and the surplus WF 6 does not reach the surface of the TiN film, the W film grows to a uniform thickness. .
【００１７】すなわ余剰ＷＦ6 によるＴｉＮ膜剥がれが
抑えられる。更に、段差被覆性を犠牲にせずにスループ
ットが上がり、また成膜中にチャンバー内に吸着したＦ
原子をＨＦにして飛ばす効果も期待でき、結果として微
小なゴミ・異物等のパーティクルの減少、品質向上に寄
与する。That is, peeling of the TiN film due to excess WF 6 is suppressed. Further, the throughput is increased without sacrificing the step coverage, and the amount of F adsorbed in the chamber during film formation is increased.
The effect of making atoms HF and flying can be expected, and as a result, it contributes to the reduction of particles such as minute dusts and foreign substances and the improvement of quality.
【００１８】[0018]
【実施例】図３はＷ膜成長レートと水素分圧の関係図
（実験値）、図４は本発明の一実施例の工程順模式断面
図である。EXAMPLE FIG. 3 is a diagram showing the relationship between W film growth rate and hydrogen partial pressure (experimental value), and FIG. 4 is a schematic cross-sectional view in order of the processes of one example of the present invention.
【００１９】図において、11はシリコン（Ｓｉ）基板、
12はフィールド二酸化シリコン(SiO2)膜、13はｐ型ウェ
ル、14はソース・ドレイン拡散層、15はゲート電極、16
は層間SiO2膜、17はコンタクトホール、18はＴｉ膜、19
はＴｉＮ膜、20はブランケットＷ膜、21はＡｌ−Ｓｉ−
Ｃｕ膜、22はSiO2膜、23はＳＯＧ膜、24はＴＥＯＳSiO2
膜、25はＴｉ膜、26はＴｉＮ膜、27はＡｌ−Ｓｉ−Ｃｕ
膜、28はパッシベーションSiO2膜、29はパッシベーショ
ン Si3N4膜である。In the figure, 11 is a silicon (Si) substrate,
12 is a field silicon dioxide (SiO 2 ) film, 13 is a p-type well, 14 is a source / drain diffusion layer, 15 is a gate electrode, 16
Is an interlayer SiO 2 film, 17 is a contact hole, 18 is a Ti film, 19
Is a TiN film, 20 is a blanket W film, and 21 is Al-Si-
Cu film, 22 SiO 2 film, 23 SOG film, 24 TEOS SiO 2
Film, 25 Ti film, 26 TiN film, 27 Al-Si-Cu
A film, 28 is a passivation SiO 2 film, and 29 is a passivation Si 3 N 4 film.
【００２０】図３に先ず、水素分圧を種々変えて、Ｗ膜
成長レートを測定し、理論値との整合性を確認した実験
結果を示す。図３において、領域Ｉは従来から用いられ
てきた条件の範囲であり、水素分圧の１／２乗に比例し
た直線にのっている。First, FIG. 3 shows an experimental result in which the W film growth rate was measured while various hydrogen partial pressures were changed and the consistency with the theoretical value was confirmed. In FIG. 3, the region I is the range of the condition that has been conventionally used, and is on a straight line proportional to the 1/2 power of the hydrogen partial pressure.
【００２１】領域IIではＷ膜の成長レートが落ちている
が、これは水素の移動限界に達したか、或いは、ＷＦ6
の反応速度が追いついていないかのどちらかである。実
験によるＴｉＮ膜の剥がれ調査から、水素分圧を上げる
と剥がれが抑えられる効果が確認できているので、後者
であることが判明する。In the region II, the growth rate of the W film is lowered, but this is because the hydrogen migration limit is reached or WF 6
Either the reaction speed of is not catching up. From the peeling investigation of the TiN film by the experiment, it has been confirmed that the peeling can be suppressed by increasing the hydrogen partial pressure, and it is therefore proved to be the latter.
【００２２】次に、本発明のブランケットＷ膜の成長方
法をＭＯＳ形ＬＳＩデバイスに適用した本発明の一実施
例について図４の工程順模式断面図を用いて説明する。
図４（ａ）に示すように、ｎ型のSi基板11の表面にフィ
ールドSiO2膜12が形成され、活性領域が画定される。Next, an embodiment of the present invention in which the blanket W film growth method of the present invention is applied to a MOS type LSI device will be described with reference to the schematic cross-sectional views in the order of steps of FIG.
As shown in FIG. 4A, the field SiO 2 film 12 is formed on the surface of the n-type Si substrate 11 to define the active region.
【００２３】活性領域にはｐ型ウェル13が形成されてお
り、ｐ型ウェル13内にはｎ+ 型領域のソース・ドレイン
拡散層14と、Si基板11とゲートSiO2膜を隔てて形成され
たポリSi膜等の絶縁ゲート構造を有するゲート電極15か
らなるｎチャネルＭＯＳＦＥＴが形成されている。A p-type well 13 is formed in the active region, and in the p-type well 13, the source / drain diffusion layer 14 in the n + type region, the Si substrate 11 and the gate SiO 2 film are separated from each other. An n-channel MOSFET including a gate electrode 15 having an insulated gate structure such as a poly-Si film is formed.
【００２４】活性領域及びフィールドSiO2膜12上には層
間SiO2膜16が形成されている。層間SiO2膜16はＴＥＯＳ
系SiO2膜を１．０μｍ堆積した後、エッチバックにより
表面を平坦化したものである。An interlayer SiO 2 film 16 is formed on the active region and field SiO 2 film 12. The interlayer SiO 2 film 16 is TEOS
The surface is flattened by etching back after depositing a 1.0-μm thick SiO 2 film.
【００２５】層間SiO2膜16のソース・ドレイン拡散層14
の領域に相当する部分にコンタクトホール17を形成す
る。コンタクトホール17形成後、図４（ｂ）に示すよう
に、層間SiO2膜16の表面にスパッタによりＴｉ膜18を 2
00Å、ＴｉＮ膜19を 1,000Åの厚さに連続的に堆積し、
コンタクトメタル及び接着層とする。続いて、枚葉式減
圧ＣＶＤ装置により本発明のブランケットＷ膜20を堆積
する。ブランケットＷ膜20の厚さはコンタクトホール17
の径とほぼ同等とする。成膜条件は、温度 450℃、ガス
圧80Torr、水素分圧22Torr、ＷＦ6 分圧１Torrとする。Source / drain diffusion layer 14 of interlayer SiO 2 film 16
A contact hole 17 is formed in a portion corresponding to the area. After forming the contact hole 17, as shown in FIG. 4B, a Ti film 18 is sputtered on the surface of the interlayer SiO 2 film 16.
00Å, TiN film 19 is continuously deposited to a thickness of 1,000Å,
Contact metal and adhesive layer. Then, the blanket W film 20 of the present invention is deposited by a single wafer type low pressure CVD apparatus. The blanket W film 20 has a contact hole 17 thickness.
It is almost the same as the diameter. The film forming conditions are a temperature of 450 ° C., a gas pressure of 80 Torr, a hydrogen partial pressure of 22 Torr, and a WF 6 partial pressure of 1 Torr.
【００２６】ＷＦ6 等の弗素系ガス及び不活性ガスによ
りSi基板11上全面に堆積したブランケットＷ膜20をエッ
チバックし、コンタクトホール17の中以外のブランケッ
トＷ膜20を除去する。このようにして、コンタクトホー
ル17内はブランケットＷ膜20により充填される。The blanket W film 20 deposited on the entire surface of the Si substrate 11 is etched back by a fluorine-based gas such as WF 6 and an inert gas, and the blanket W film 20 other than in the contact hole 17 is removed. In this way, the contact hole 17 is filled with the blanket W film 20.
【００２７】次に、スパッタ法により、厚さ 6,000Åの
Ａｌ−Ｓｉ−Ｃｕ膜21を成膜する。これとＴｉ膜18及び
ＴｉＮ膜19との積層膜をパターニングし、一層目の配線
を形成する。このようにして、ｎ+ 型領域のソース・ド
レイン拡散層14と一層目の配線とを電気的に接続するこ
とができる。Next, an Al-Si-Cu film 21 having a thickness of 6,000Å is formed by the sputtering method. The laminated film of this and the Ti film 18 and the TiN film 19 is patterned to form a first layer wiring. In this way, the source / drain diffusion layer 14 in the n + type region and the wiring of the first layer can be electrically connected.
【００２８】続いて、図４（ｃ）に示すように、プラズ
マＣＶＤ法により、厚さ 4,000ÅのSiO2膜22を一層目配
線上、Si基板11の全面に堆積する。そして、厚さ 2,500
ÅのＳＯＧ膜23を塗布してエッチバックすることによ
り、表面を平坦化する。その上に厚さ 6,000ÅのＴＥＯ
Ｓ系SiO2膜24を被覆する。Subsequently, as shown in FIG. 4C, a SiO 2 film 22 having a thickness of 4,000 Å is deposited on the entire surface of the Si substrate 11 on the first wiring by the plasma CVD method. And thickness 2,500
The SOG film 23 of Å is applied and etched back to flatten the surface. On top of that, TEO with a thickness of 6,000Å
The S-based SiO 2 film 24 is covered.
【００２９】次に、図示はしないが、一層目の配線と二
層目の配線の接続をするために、接続領域において、Ｔ
ＥＯＳ系SiO2膜24とSiO2膜22に二層目のＡｌ−Ｓｉ−Ｃ
ｕ膜27に接続するためのコンタクトホールを形成する。
一層目のコンタクトホールと同様に、Ｔｉ膜25、ＴｉＮ
膜26のスパッタを行い、二層目のブランケットＷ膜の堆
積、更にエッチバックによりコンタクトホール内にのみ
ブランケットＷ膜を充填する。Next, although not shown, in order to connect the wiring of the first layer and the wiring of the second layer, in the connection region, T
A second layer of Al-Si-C is formed on the EOS-based SiO 2 film 24 and the SiO 2 film 22.
A contact hole for connecting to the u film 27 is formed.
Similar to the contact hole in the first layer, Ti film 25, TiN
The film 26 is sputtered to deposit a blanket W film of the second layer, and then the blanket W film is filled only in the contact holes by etching back.
【００３０】続いて、二層目の配線となるＡｌ−Ｓｉ−
Ｃｕ膜27をスパッタ法により堆積し、Ｔｉ膜25、ＴｉＮ
膜26とともにパターニングを行い、二層目配線を形成す
る。このようにして、一層目配線と二層目配線とを電気
的に接続する。Subsequently, Al-Si- which will be the second layer wiring
Cu film 27 is deposited by the sputtering method, and Ti film 25 and TiN are deposited.
Patterning is performed together with the film 26 to form a second layer wiring. In this way, the first-layer wiring and the second-layer wiring are electrically connected.
【００３１】更に、プラズマＣＶＤ法によりパッシベー
ション膜として厚さ 2,000ÅのパッシベーションSiO2膜
28及び厚さ１μｍのパッシベーション Si3N4膜29を被覆
してＭＯＳ型ＬＳＩを形成する。Further, a passivation SiO 2 film having a thickness of 2,000Å is formed by a plasma CVD method as a passivation film.
28 and a 1 μm thick passivation Si 3 N 4 film 29 is coated to form a MOS type LSI.
【００３２】本発明の水素分圧を上げてＴｉＮ膜の剥離
を防止したロットと、従来方法の剥がれ対策を採らない
ロットとの歩留りを調べた結果、図５に示すように本発
明は歩留りが平均して二倍以上に向上している。As a result of examining the yield of the lot of the present invention in which peeling of the TiN film was prevented by increasing the hydrogen partial pressure and the lot in which the peeling countermeasure of the conventional method was not taken, the yield of the present invention was as shown in FIG. It is more than doubled on average.
【００３３】[0033]
【発明の効果】上記のように、本発明のＣＶＤ法による
ブランケットＷ膜成長方法を用いれば、余剰のＷＦ6 が
ＴｉＮ膜の表面に到達しないので、余剰ＷＦ6 によるＴ
ｉＮ膜剥がれが抑えられて、Ｗ膜は一様に均一な厚さで
成長し、段差被覆性を犠牲にせずにスループットが上が
り、歩留りの向上が期待できる。As described above, according to the present invention, the use of the blanket W film growth method by CVD of the present invention, since the excess WF 6 does not reach the surface of the TiN film, due to the surplus WF 6 T
The peeling of the iN film is suppressed, the W film grows to a uniform thickness, the throughput increases without sacrificing the step coverage, and the yield can be expected to improve.
【００３４】また成膜中にチャンバー内に吸着したＦ原
子をＨＦにして飛ばす効果も期待でき、微小なゴミ・異
物等のパーティクルの減少、品質向上に寄与する。Further, it is expected that the F atoms adsorbed in the chamber during the film formation can be converted into HF to be ejected, which contributes to the reduction of particles such as minute dusts and foreign matters and the improvement of quality.
【図１】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.
【図２】 Ｗ膜成長レートとＨ2 分圧の関係図（理論
値）[Fig. 2] Relationship between W film growth rate and H 2 partial pressure (theoretical value)
【図３】 Ｗ膜成長レートとＨ2 分圧の関係図（実験
値）[Fig. 3] Relationship between W film growth rate and H 2 partial pressure (experimental value)
【図４】 本発明の一実施例の工程順模式断面図FIG. 4 is a schematic cross-sectional view in order of the processes of an embodiment of the present invention.
【図５】 本発明と従来例との歩留り比較FIG. 5: Yield comparison between the present invention and a conventional example
【図６】 従来例の説明図FIG. 6 is an explanatory diagram of a conventional example.
図において １ 半導体基板 ２ Ｔｉ膜 ３ ＴｉＮ膜 ４ 水素分子 ５ Ｗ核 ６ Ｗ膜 11 Ｓｉ基板 12 フィールドSiO2膜 13 ｐ型ウェル 14 ソース・ドレイン拡散層 15 ゲート電極 16 層間SiO2膜 17 コンタクトホール 18 Ｔｉ膜 19 ＴｉＮ膜 20 ブランケットＷ膜 21 Ａｌ−Ｓｉ−Ｃｕ膜 22 SiO2膜 23 ＳＯＧ膜 24 ＴＥＯＳ系SiO2膜 25 Ｔｉ膜 26 ＴｉＮ膜 27 Ａｌ−Ｓｉ−Ｃｕ膜 28 パッシベーションSiO2膜 29 パッシベーション Si3N4膜In the figure, 1 semiconductor substrate 2 Ti film 3 TiN film 4 hydrogen molecule 5 W nucleus 6 W film 11 Si substrate 12 field SiO 2 film 13 p-type well 14 source / drain diffusion layer 15 gate electrode 16 interlayer SiO 2 film 17 contact hole 18 Ti film 19 TiN film 20 Blanket W film 21 Al-Si-Cu film 22 SiO 2 film 23 SOG film 24 TEOS-based SiO 2 film 25 Ti film 26 TiN film 27 Al-Si-Cu film 28 Passivation SiO 2 film 29 Passivation Si 3 N 4 membrane
Claims (1)
テン膜の成長において、反応ガスとして用いる六弗化タ
ングステンガスと水素ガスの混合ガスの内、該六弗化タ
ングステンと該水素との反応が該六弗化タングステンの
分解に対して支配的となる分圧比の領域まで該水素ガス
の分圧を上げて該ブランケットタングステン膜の成長を
行うことを特徴とする半導体装置の製造方法。1. A reaction between tungsten hexafluoride and hydrogen in a mixed gas of tungsten hexafluoride gas and hydrogen gas used as a reaction gas in growing a blanket tungsten film on a semiconductor substrate, A method of manufacturing a semiconductor device, wherein the blanket tungsten film is grown by increasing the partial pressure of the hydrogen gas to a region having a partial pressure ratio that is dominant for decomposition of tungsten carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20862094A JPH0878363A (en) | 1994-09-01 | 1994-09-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20862094A JPH0878363A (en) | 1994-09-01 | 1994-09-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0878363A true JPH0878363A (en) | 1996-03-22 |
Family
ID=16559245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20862094A Withdrawn JPH0878363A (en) | 1994-09-01 | 1994-09-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0878363A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6315836B1 (en) | 1998-07-13 | 2001-11-13 | Kokusai Electric Co., Ltd. | Clean, recirculating processing method which prevents surface contamination of an object |
-
1994
- 1994-09-01 JP JP20862094A patent/JPH0878363A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6315836B1 (en) | 1998-07-13 | 2001-11-13 | Kokusai Electric Co., Ltd. | Clean, recirculating processing method which prevents surface contamination of an object |
| US6431190B1 (en) | 1998-07-13 | 2002-08-13 | Kokusai Electric Co., Ltd. | Fluid processing apparatus |
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