JPH0874045A - Cobalt silicide sintered target material for sputtering hardly generating particles during film formation - Google Patents
Cobalt silicide sintered target material for sputtering hardly generating particles during film formationInfo
- Publication number
- JPH0874045A JPH0874045A JP6216813A JP21681394A JPH0874045A JP H0874045 A JPH0874045 A JP H0874045A JP 6216813 A JP6216813 A JP 6216813A JP 21681394 A JP21681394 A JP 21681394A JP H0874045 A JPH0874045 A JP H0874045A
- Authority
- JP
- Japan
- Prior art keywords
- cosi
- eutectic
- phase
- target material
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体デバイスにお
ける電極や配線などを構成するＣｏシリサイド薄膜をス
パッタリングにより形成するのに用いた場合に、成膜中
に薄膜欠陥となるパ−ティクルの発生が著しく少ない焼
結タ−ゲット材に関するものである。BACKGROUND OF THE INVENTION The present invention, when used to form a Co silicide thin film which constitutes an electrode or wiring in a semiconductor device by sputtering, causes the generation of particles which become thin film defects during film formation. It relates to significantly less sintered target material.
【０００２】[0002]
【従来の技術】従来、半導体デバイスの製造に際して、
スパッタリングにより低抵抗のＣｏシリサイド薄膜を形
成することが行われる場合があり、これにＣｏシリサイ
ド焼結タ−ゲット材が用いられている。また、上記Ｃｏ
シリサイド焼結タ−ゲット材は、原料としてＣｏ板材と
Ｓｉ塊材を用い、これを所定の割合に秤量し、非酸化性
雰囲気中で電子ビ−ム溶解などにより溶解し、ついで、
粉砕し、ホットプレスすることにより製造されることも
知られている。さらに、この結果得られたＣｏシリサイ
ド焼結タ−ゲット材は、組成式：ＣｏＳｉn（ｎはモル
比で１．８〜２．０）を満足する場合、すなわち原料と
してＣｏＳｉ1.8-2.0の組成を有する粉砕粉末を用いて
ホットプレスした場合、Ｃｏ−Ｓｉ２元合金系状態図に
おけるＣｏＳｉ化合物相とＣｏＳｉ2化合物相の２相組
織をもつようになることも知られている。2. Description of the Related Art Conventionally, when manufacturing a semiconductor device,
A Co silicide thin film having a low resistance may be formed by sputtering, and a Co silicide sintered target material is used for this. In addition, the above Co
The silicide sintered target material uses a Co plate material and a Si lump material as raw materials, and weighs them at a predetermined ratio and dissolves them by electron beam melting or the like in a non-oxidizing atmosphere.
It is also known to be manufactured by crushing and hot pressing. Furthermore, the resulting Co silicide sintered Yuita - target material, the composition formula: If CoSi n (n is the 1.8-2.0 in molar ratio) is satisfied, i.e. the composition of CoSi 1.8-2.0 as a raw material It is also known that, when hot-pressed using a pulverized powder having No. 1, a two-phase structure of a CoSi compound phase and a CoSi 2 compound phase in a Co-Si binary alloy phase diagram is obtained.
【０００３】[0003]
【発明が解決しようとする課題】−方、近年のスパッタ
リング技術の進歩はめざましく、スパッタリング装置の
高出力化および大型化が可能となり、これに伴い、Ｃｏ
シリサイド薄膜の形成に際しても、成膜の高速化および
大面積化がはかられる傾向にあるが、上記の従来Ｃｏシ
リサイド焼結タ−ゲット材においては、これを用いて高
速成膜や大面積成膜を行うと、成膜中にパ−ティクル
（微細粒子）が発生し易くなるという問題がある。な
お、薄膜中にパ−ティクルが多数存在すると、これが例
えば０．５〜４μｍの線幅で形成された電極を断線させ
たり、配線内を短絡させたりするなどの原因となり、不
良率が増大するようになるものである。On the other hand, the progress of sputtering technology in recent years has been remarkable, and it has become possible to increase the output and size of a sputtering apparatus.
Even when forming a silicide thin film, there is a tendency for film formation to be speeded up and to have a large area. However, in the above conventional Co silicide sintered target material, this is used to form a high speed film and a large area. When the film is formed, there is a problem that particles (fine particles) are easily generated during the film formation. If a large number of particles are present in the thin film, this may cause, for example, disconnection of electrodes formed with a line width of 0.5 to 4 μm or short circuit in the wiring, thus increasing the defect rate. It will be like this.
【０００４】[0004]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、Ｃｏシリサイド薄膜のスパッタ
リングによる形成に際して、パ−ティクル発生の少ない
Ｃｏシリサイド焼結タ−ゲット材を開発すべく研究を行
なつた結果、原料粉末として、予めＣｏ板材とＳｉ塊材
を所定の割合に秤量し、これを例えば電子ビ−ム溶解な
どにより溶解し、粉砕することにより調製した、Ｃｏ−
Ｓｉ２元合金系状態図におけるＣｏＳｉ化合物とＣｏＳ
ｉ2化合物の共晶からなるＣｏＳｉ−ＣｏＳｉ2共晶粉末
と、同じく同状態図におけるＣｏＳｉ2化合物とＳｉの
共晶からなるＣｏＳｉ2-Ｓｉ共晶粉末を用い、これら両
原料粉末を所定の割合に配合し、混合した後、ホットプ
レスすることにより組成式：ＣｏＳｉn（ただし、ｎは
モル比で１．８〜２．０）を満足するＣｏシリサイド焼
結タ−ゲット材を製造すると、上記ホットプレス時に、
上記ＣｏＳｉ−ＣｏＳｉ2共晶粉末とＣｏＳｉ2-Ｓｉ共
晶粉末が反応して、これら両者間にはＣｏＳｉ2化合物
が形成されるようになり、したがつてこの結果のＣｏシ
リサイド焼結タ−ゲット材は、ＣｏＳｉ2化合物の反応
生成相中に、未反応のＣｏＳｉ−ＣｏＳｉ2共晶相が分
散分布した組織をもつようになり、このような組織を有
するＣｏシリサイド焼結タ−ゲット材においては、成膜
中のパ−ティクル発生が著しく減少し、パ−ティクルの
きわめて少ないＣｏシリサイド薄膜の形成が可能になる
という研究結果を得たのである。Therefore, the present inventors have
From the above viewpoints, when the Co silicide thin film was formed by sputtering, research was conducted to develop a Co silicide sintered target material that generates less particles, and as a result, a Co plate material and Si A lump material was weighed in a predetermined ratio, dissolved by, for example, electron beam melting, and prepared by pulverizing Co-
CoSi compound and CoS in Si binary alloy phase diagram
and CoSi-CoSi 2 eutectic powder made of eutectic i 2 compounds, using CoSi 2 -Si eutectic powder made of eutectic CoSi 2 compound and Si in same the state diagram, the ratio of these two raw material powders of predetermined after blended, and mixed in the composition formula by hot pressing: CoSi n (where, n is 1.8 to 2.0 molar ratio) Co silicide sintered Yuita satisfying - when producing the target material, the During hot pressing,
The CoSi—CoSi 2 eutectic powder and the CoSi 2 —Si eutectic powder react with each other to form a CoSi 2 compound between them, and thus the resulting Co silicide sintering target is obtained. The material has a structure in which an unreacted CoSi—CoSi 2 eutectic phase is distributed and distributed in the reaction product phase of the CoSi 2 compound. In the Co silicide sintered target material having such a structure, The present inventors have obtained the research results that the generation of particles during film formation is significantly reduced and a Co silicide thin film with extremely few particles can be formed.
【０００５】この発明は、上記の研究結果にもとづいて
なされたものであつて、ＣｏＳｉn（ただし、ｎはモル
比で１．８〜２．０）の組成式を満足し、かつＣｏ−Ｓ
ｉ２元合金系状態図で示されるＣｏＳｉ2化合物が反応
生成相として存在し、このＣｏＳｉ2化合物反応生成相
中に、同状態図におけるＣｏＳｉ化合物とＣｏＳｉ2化
合物の共晶からなる未反応共晶相が分散分布した組織を
有するスパッタリング用Ｃｏシリサイド焼結タ−ゲット
材に特徴を有するものである。 なお、組成式における
ｎの値を１．８〜２．０としたのは、ｎの値が１．８未
満では、所望の低抵抗をもつたＣｏシリサイド薄膜の形
成を行うことができず、−方ｎ値が２．０を越えると、
上記の組織を形成することが困難になるという理由によ
るものである。[0005] The present invention shall apply was made based on the above findings, CoSi n (where, n is the molar ratio 1.8 to 2.0) satisfy the composition formula, and Co-S
The CoSi 2 compound shown in the i binary alloy phase diagram exists as a reaction product phase, and in this CoSi 2 compound reaction product phase, an unreacted eutectic phase composed of a eutectic of the CoSi compound and the CoSi 2 compound in the same phase diagram Is characterized by a Co silicide sintered target material for sputtering having a structure in which is dispersedly distributed. In addition, the value of n in the composition formula is set to 1.8 to 2.0, because when the value of n is less than 1.8, a Co silicide thin film having a desired low resistance cannot be formed. -If the n value exceeds 2.0,
This is because it is difficult to form the above structure.
【０００６】[0006]
【実施例】つぎに、この発明のＣｏシリサイド焼結タ−
ゲット材を実施例により具体的に説明する。 まず、５
Ｎ（ナイン）の高純度Ｃｏ板材と７Ｎの高純度Ｓｉ塊材
を用い、これらを所定の割合に秤量し、真空度：１０−
５tｏｒｒの雰囲気中、水冷銅ハ−スにて電子ビ−ム溶
解を行ない、ついでジョ−クラッシャ−にて粗粉砕し、
さらにボ−ルミルで微粉砕して、それぞれＣｏ−Ｓｉ
２元合金系状態図におけるＣｏＳｉ化合物とＣｏＳｉ2
化合物の共晶からなるＣｏＳｉ−ＣｏＳｉ2共晶粉末
と、同じく同状態図におけるＣｏＳｉ2化合物とＳｉの
共晶からなるＣｏＳｉ2-Ｓｉ共晶粉末を調製し、ついで
これら両共晶粉末を原料粉末として用い、２０〜１００
μｍの範囲内の所定の平均粒径に調整した状態で、表１
に示される割合に配合し、Ｖ型ミキサ−にて３０分間混
合した後、温度：１２５０℃、圧力：２０ＭＰａ、保持
時間：６０分の条件でホットプレスすることにより組成
式：ＣｏＳｉnのｎの値がそれぞれ表１に示される値を
もち、かついずれもＣｏＳｉ2化合物反応生成相中に、
ＣｏＳｉ−ＣｏＳｉ2共晶の未反応共晶相が分散分布し
た組織を有し、さらに直径：２５０ｍｍ，厚さ：１０ｍ
ｍの寸法をもつた本発明Ｃｏシリサイド焼結タ−ゲット
材（以下、本発明タ−ゲット材という）１〜４をそれぞ
れ製造した。EXAMPLES Next, the Co silicide sintering type of the present invention was used.
The get material will be specifically described by way of examples. First, 5
N (nine) high-purity Co plate material and 7N high-purity Si lump material were used, these were weighed at a predetermined ratio, and the degree of vacuum was 10 −.
In an atmosphere of 5 torr, an electron beam was melted with a water-cooled copper hearth, and then coarsely crushed with a jaw crusher,
Further finely pulverized with a ball mill to obtain Co-Si
CoSi compound and CoSi 2 in binary alloy system phase diagram
A CoSi-CoSi 2 eutectic powder composed of a eutectic of a compound and a CoSi 2 -Si eutectic powder composed of a CoSi 2 compound and a eutectic of Si in the same phase diagram were prepared, and then both these eutectic powders were used as raw material powders. Used as 20-100
Table 1 with the average particle size adjusted within the range of μm
After mixing for 30 minutes in a V-type mixer, the mixture was mixed in the proportions shown in Table 1, and then hot-pressed under the conditions of temperature: 1250 ° C., pressure: 20 MPa, holding time: 60 minutes to prepare a composition formula: n of CoSin. The values have the values shown in Table 1, and both are in the CoSi 2 compound reaction production phase,
It has a structure in which an unreacted eutectic phase of CoSi—CoSi 2 eutectic is distributed and distributed, and further diameter: 250 mm, thickness: 10 m.
The Co silicide sintered target materials of the present invention (hereinafter referred to as the target material of the present invention) 1 to 4 each having a size of m were manufactured.
【０００７】また、比較の目的で、上記の高純度Ｃｏ板
材と高純度Ｓｉ塊材の秤量割合をかえて組成式：ＣｏＳ
ｉnのｎが表２に示される値のＣｏＳｉn粉末を調製し、
これを原料粉末として用いる以外は同一の条件で従来Ｃ
ｏシリサイド焼結タ−ゲット材（以下、従来タ−ゲット
材という）１〜３をそれぞれ製造した。この従来タ−ゲ
ット材１〜３は、いずれもＣｏＳｉ相とＣｏＳｉ2相か
らなる組織をもつものであった。For the purpose of comparison, the composition formula: CoS was changed by changing the weighing ratios of the high-purity Co plate material and the high-purity Si lump material.
A CoSi n powder having a value of n of i n shown in Table 2 was prepared,
Conventional C under the same conditions except that this is used as raw material powder
o Silicide sintered target materials (hereinafter referred to as conventional target materials) 1 to 3 were manufactured. Each of the conventional target materials 1 to 3 has a structure composed of a CoSi phase and a CoSi 2 phase.
【０００８】つぎに、この結果得られた各種タ−ゲット
材を、スパッタリング装置に組み込み、 基板：直径１５２ｍｍのＳｉウエハ 基板温度：１８０℃ 基板とタ−ゲット材間の距離：６０ｍｍ 雰囲気：３×１０−３tｏｒｒのＡｒガス 直流出力：１．６ｋＷ スパッタ時間：１分 の条件でＳｉウェハの表面にＣｏシリサイド薄膜を形成
し、Ｓｉウェハ表面の薄膜における直径：０．３μｍ以
上のパ−ティクル発生数を測定した。この測定結果をそ
れぞれ表１，２に示した。Next, various target materials obtained as a result were incorporated into a sputtering apparatus, and a substrate: a Si wafer having a diameter of 152 mm, a substrate temperature: 180 ° C., a distance between the substrate and the target material: 60 mm, an atmosphere: 3 × 10-3 torr Ar gas DC output: 1.6 kW Sputtering time: 1 minute Co Co silicide thin film was formed on the surface of Si wafer, diameter of the thin film on Si wafer surface: Number of particles of 0.3 μm or more Was measured. The measurement results are shown in Tables 1 and 2, respectively.
【０００９】[0009]
【表１】 [Table 1]
【００１０】[0010]
【表２】 [Table 2]
【００１１】[0011]
【発明の効果】表１，２に示される結果から、ＣｏＳｉ
2反応生成相中に、ＣｉＳｉ−ＣｏＳｉ2共晶の未反応共
晶相が分散分布する組織を有する本発明タ−ゲット１〜
４で形成されたＣｏシリサイド薄膜中には、ＣｏＳｉ相
−ＣｏＳｉ2相からなる組織を有する従来タ−ゲット材
１〜３を用いて形成された薄膜に比してパ−ティクル発
生が著しく少ないことが明らかである。上述のように、
この発明のスパッタリング用Ｃｏシリサイド焼結タ−ゲ
ット材は、成膜中のパ−ティクル発生がきわめて少な
く、これは成膜速度を上げても、また成膜面積を大きく
しても変わらないので、スパッタリング装置の高出力化
および大型化に十分満足に対応することができるもので
ある。From the results shown in Tables 1 and 2, CoSi
Targets 1 to 1 of the present invention having a structure in which an unreacted eutectic phase of a CiSi-CoSi 2 eutectic is dispersedly distributed in the 2 reaction-produced phase
In the Co silicide thin film formed in No. 4, the generation of particles is significantly smaller than that in the thin film formed using the conventional target materials 1 to 3 having the structure of CoSi phase-CoSi 2 phase. Is clear. As mentioned above,
The Co silicide sintered target material for sputtering according to the present invention has very little particle generation during film formation, and this does not change even if the film formation rate is increased or the film formation area is increased. It is possible to satisfactorily deal with the increase in output and the increase in size of the sputtering apparatus.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/203 Ｓ 9545−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01L 21/203 S 9545-4M
Claims (1)
８〜２．０）の組成式を満足し、かつＣｏ−Ｓｉ２元合
金系状態図で示されるＣｏＳｉ2化合物が反応生成相と
して存在し、このＣｏＳｉ2化合物反応生成相中に、同
状態図におけるＣｏＳｉ化合物とＣｏＳｉ2化合物の共
晶からなる未反応共晶相が分散分布した組織を有するこ
とを特徴とする成膜中にパ−ティクル発生の少ないスパ
ッタリング用Ｃｏシリサイド焼結タ−ゲット材。1. CoSi n (where n is a molar ratio of 1.
8 to 2.0), and the CoSi 2 compound shown in the Co—Si binary alloy phase diagram is present as a reaction product phase, and in this CoSi 2 compound reaction product phase, in the phase diagram A Co silicide sintered target material for sputtering with little particle generation during film formation, which has a structure in which an unreacted eutectic phase composed of a eutectic of a CoSi compound and a CoSi 2 compound has a distributed distribution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6216813A JPH0874045A (en) | 1994-09-12 | 1994-09-12 | Cobalt silicide sintered target material for sputtering hardly generating particles during film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6216813A JPH0874045A (en) | 1994-09-12 | 1994-09-12 | Cobalt silicide sintered target material for sputtering hardly generating particles during film formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0874045A true JPH0874045A (en) | 1996-03-19 |
Family
ID=16694296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6216813A Withdrawn JPH0874045A (en) | 1994-09-12 | 1994-09-12 | Cobalt silicide sintered target material for sputtering hardly generating particles during film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0874045A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337272B1 (en) | 1999-02-24 | 2002-01-08 | Nec Corporation | Method of manufacturing a semiconductor device |
| WO2003009367A1 (en) * | 2001-07-18 | 2003-01-30 | Nikko Materials Company, Limited | Hafnium silicide target for forming gate oxide film and method for preparation thereof |
-
1994
- 1994-09-12 JP JP6216813A patent/JPH0874045A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337272B1 (en) | 1999-02-24 | 2002-01-08 | Nec Corporation | Method of manufacturing a semiconductor device |
| WO2003009367A1 (en) * | 2001-07-18 | 2003-01-30 | Nikko Materials Company, Limited | Hafnium silicide target for forming gate oxide film and method for preparation thereof |
| US7517515B2 (en) | 2001-07-18 | 2009-04-14 | Nippon Mining & Metals Co., Ltd. | Hafnium silicide target for forming gate oxide film and method for preparation thereof |
| US7674446B2 (en) | 2001-07-18 | 2010-03-09 | Nippon Mining & Metals Co., Ltd | Hafnium silicide target for forming gate oxide film, and method for preparation thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20011120 |