JPH0855784A - Aligner - Google Patents

Aligner

Info

Publication number
JPH0855784A
JPH0855784A JP6215312A JP21531294A JPH0855784A JP H0855784 A JPH0855784 A JP H0855784A JP 6215312 A JP6215312 A JP 6215312A JP 21531294 A JP21531294 A JP 21531294A JP H0855784 A JPH0855784 A JP H0855784A
Authority
JP
Japan
Prior art keywords
reference mark
mask
photosensitive substrate
surface side
mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6215312A
Other languages
Japanese (ja)
Inventor
Kei Nara
圭 奈良
Toshio Matsuura
敏男 松浦
Seiji Miyazaki
聖二 宮崎
Takeshi Narabe
毅 奈良部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP6215312A priority Critical patent/JPH0855784A/en
Priority to KR1019950025127A priority patent/KR100381629B1/en
Priority to US08/515,783 priority patent/US5617211A/en
Publication of JPH0855784A publication Critical patent/JPH0855784A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To properly correct image formation property by measuring the quantity of slippage of the image by the projective optical systems corresponding to each of reference marks and the reference marks, and correcting the image formation property of a plurality of projective optical systems, according to the quantity of slippage. CONSTITUTION:The quantity of slippage between the image by a plurality of projective optical systems 5-9 corresponding to each of the first reference mark 10A on the side of a mask face and the second reference mark 10B on the side of a mask face, the first reference mark 11 on the side of a photosensitive substrate and the second reference mark 11 on the side of the photosensitive substrate or the quantity of slippage between the image by a plurality of projective optical systems 5-9 corresponding to each of the first reference mark 11 on the side of the photosensitive substrate and the second reference mark 11 on the side of the photosensitive substrate and the first reference mark 10A on the side of the mark face and the second reference mark 10B on the side of the mask face is measured, and the image formation property of the projective optical systems 5-9 is corrected, according to the quantity of its slippage. Hereby, the projective optical systems 5-9 can be optimized by directly measuring the quantity of slippage being obtained by projecting it actually, so the image formation property of the projecting optical systems 5-9 can be properly corrected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は露光装置に関し、特に半
導体素子や液晶表示基板製造用の露光装置で投影光学系
を複数有するするものに適用し得る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, and more particularly, it can be applied to an exposure apparatus for manufacturing a semiconductor element or a liquid crystal display substrate, which has a plurality of projection optical systems.

【０００２】[0002]

【従来の技術】従来、パーソナルコンピユータやテレビ
ジヨン受像機の表示素子として、液晶表示基板が多用さ
れるようになつた。この液晶表示基板は、ガラス基板上
に透明薄膜電極をフオトリソグラフイの手法で所望の形
状にパターンニングして作られる。このリソグラフイの
ための装置として、マスク上に形成された原画パターン
を投影光学系を介してガラス基板上のフオトレジスト層
に露光する投影露光装置が用いられる。2. Description of the Related Art Conventionally, a liquid crystal display substrate has been widely used as a display element of a personal computer or a television receiver. This liquid crystal display substrate is manufactured by patterning a transparent thin film electrode on a glass substrate into a desired shape by a photolithographic method. As an apparatus for this lithography, a projection exposure apparatus is used which exposes an original image pattern formed on a mask onto a photoresist layer on a glass substrate via a projection optical system.

【０００３】また最近では、液晶表示基板の大面積化が
要求されており、それに伴つて投影露光装置においても
露光領域の拡大が望まれている。この露光領域の拡大の
手段として、複数の投影レンズを有する走査型露光装置
が考えられる。すなわちこの走査型露光装置において
は、光源から射出した光束をフライアイレンズ等を含む
光学系を介して光量を均一化した後、視野絞りによつて
所望の形状に整形してマスクのパターン面を照明する。Recently, there has been a demand for a larger area of the liquid crystal display substrate, and accordingly, the projection exposure apparatus is also required to expand the exposure area. As a means for enlarging the exposure area, a scanning type exposure apparatus having a plurality of projection lenses can be considered. That is, in this scanning exposure apparatus, after the light flux emitted from the light source is made uniform in the amount of light through an optical system including a fly-eye lens and the like, it is shaped into a desired shape by a field stop and the pattern surface of the mask is formed. Illuminate.

【０００４】このような構成の照明系を複数配置し、複
数の照明系のそれぞれから射出された光束でマスク上の
異なる小領域（照明領域）をそれぞれ照明する。マスク
を透過した光束は、それぞれ異なる複数の投影レンズを
介してガラス基板上の異なる投影領域にマスクのパター
ン像を結像する。そしてマスクとガラス基板とを同期さ
せて投影レンズに対して走査することによつて、マスク
上のパターン領域の全面をガラス基板上に転写する。A plurality of illumination systems having such a configuration are arranged, and different small areas (illumination areas) on the mask are illuminated by the light beams emitted from each of the plurality of illumination systems. The light flux that has passed through the mask forms a pattern image of the mask on different projection regions on the glass substrate through a plurality of different projection lenses. Then, by synchronously scanning the mask and the glass substrate with respect to the projection lens, the entire surface of the pattern area on the mask is transferred onto the glass substrate.

【０００５】[0005]

【発明が解決しようとする課題】ところで上述した構成
の走査型露光装置では、複数の投影レンズでマスクの連
続したパターンを分割してガラス基板上に、分割した像
がすき間なく、あるいは所定量オーバーラツプするよう
に投影されるため、各投影レンズの結像特性の差が大き
いと、分割された像がガラス基板上に連続して形成され
ないという問題が生じる。By the way, in the scanning type exposure apparatus having the above-mentioned structure, the continuous pattern of the mask is divided by a plurality of projection lenses so that the divided images are not overlapped or overlapped by a predetermined amount on the glass substrate. Therefore, if there is a large difference in the image forming characteristics of the projection lenses, there arises a problem that divided images are not continuously formed on the glass substrate.

【０００６】そこで複数の投影レンズを組み立てる際
に、結像特性の差が最小になるよう調整するようになさ
れているが、作業が難しく時間が必要となる問題があ
る。また１度組み立てた後も、経時変化により結像特性
が変化することもあり、実用上不十分であつた。Therefore, when assembling a plurality of projection lenses, adjustment is made so as to minimize the difference in image forming characteristics, but there is a problem that the work is difficult and time is required. In addition, even after being assembled once, the imaging characteristics may change with time, which is not practically sufficient.

【０００７】本発明は以上の点を考慮してなされたもの
で、複数の投影光学系に対してマスク及び感光基板を同
期させて走査して、マスク上のパターン領域の全面を正
しく感光基板上に転写し得る露光装置を提案しようとす
るものである。The present invention has been made in consideration of the above points, and the mask and the photosensitive substrate are synchronously scanned with respect to a plurality of projection optical systems so that the entire surface of the pattern area on the mask is correctly exposed on the photosensitive substrate. The present invention is intended to propose an exposure device capable of transferring to the.

【０００８】[0008]

【課題を解決するための手段】かかる課題を解決するた
め本発明においては、光源の光束をマスク（２）のパタ
ーン領域内の複数の部分領域に照射する複数の照明光学
系（３）と、所定方向に沿い、かつその所定方向の直交
方向に互いに変位して配置され、マスク（２）を透過し
た光束により複数の部分領域それぞれの像を、隣合う像
の所定方向の位置を互いに重複させて感光基板（４）上
に投影する複数の投影光学系（５〜９）と、その投影光
学系（５〜９）に対して、所定方向の略直交方向（ａ）
に、マスク（２）及び感光基板（４）を同期させて走査
する走査手段とを有し、マスク（２）と感光基板（４）
とを投影光学系（５〜９）に対して走査することによ
り、マスク（２）のパターン領域の全面を感光基板
（４）上に転写する露光装置（１）において、マスク
（２）面上及び感光基板面（４）上の互いに対応する位
置で、かつ複数の投影光学系（５〜９）の配列のうち両
端部の投影光学系（５、７）に対して共役な位置にそれ
ぞれ配された２組のマスク面側第１基準マーク（１０Ａ
（ａ、ｂ））及び感光基板面側第１基準マーク（１１
（ａ′、ｂ′））と、マスク（２）面上及び感光基板面
（４）上の互いに対応する位置で、かつ重複する位置に
対応して所定方向に１列に配され、１方がマスク面側第
１基準マーク（１０Ａ（ａ、ｂ））及び感光基板面側第
１基準マーク（１１（ａ′、ｂ′））に対して固定さ
れ、他方が移動可能な複数のマスク面側第２基準マーク
（１０Ｂ（ｃ〜ｈ））及び感光基板面側第２基準マーク
（１１（ｃ′〜ｈ′））と、マスク面側第１基準マーク
（１０Ａ（ａ、ｂ））及びマスク面側第２基準マーク
（１０Ｂ（ｃ〜ｈ））の、それぞれ対応する複数の投影
光学系（５〜９）による像と、感光基板側第１基準マー
ク（１１（ａ′、ｂ′））及び感光基板側第２基準マー
ク（１１（ｃ′〜ｈ′））とのずれ量、若しくは感光基
板側第１基準マーク（１１（ａ′、ｂ′））及び感光基
板側第２基準マーク（１１（ｃ′〜ｈ′））の、それぞ
れ対応する複数の投影光学系（５〜９）による像と、マ
スク面側第１基準マーク（１０Ａ（ａ、ｂ））及びマス
ク面側第２基準マーク（１０Ｂ（ｃ〜ｈ））とのずれ量
を計測するずれ量計測手段（１２〜１６、２３、２４）
と、そのずれ量計測手段（１２〜１６、２３、２４）で
計測されたずれ量に応じて、複数の投影光学系（５〜
９）それぞれの結像特性を補正するレンズ調整手段（１
７〜２１）とを設けるようにした。In order to solve such a problem, according to the present invention, a plurality of illumination optical systems (3) for irradiating a plurality of partial areas in a pattern area of a mask (2) with a light flux of a light source, The images of the plurality of partial regions are arranged along a predetermined direction and displaced from each other in a direction orthogonal to the predetermined direction, and the images of the plurality of partial regions are overlapped with each other in the positions of the adjacent images in the predetermined direction. A plurality of projection optical systems (5-9) for projecting onto the photosensitive substrate (4), and a direction (a) substantially orthogonal to a predetermined direction with respect to the projection optical systems (5-9).
And a scanning means for scanning the mask (2) and the photosensitive substrate (4) in synchronization with each other, and the mask (2) and the photosensitive substrate (4).
In the exposure device (1) for transferring the entire pattern area of the mask (2) onto the photosensitive substrate (4) by scanning and with respect to the projection optical system (5 to 9), on the mask (2) surface. And at positions corresponding to each other on the photosensitive substrate surface (4) and at positions conjugate with the projection optical systems (5, 7) at both ends of the array of the plurality of projection optical systems (5-9). 2 sets of mask surface side first fiducial marks (10A
(A, b)) and the first reference mark (11
(A ', b')) and a position corresponding to each other on the mask (2) surface and the photosensitive substrate surface (4) and corresponding to overlapping positions are arranged in one row in a predetermined direction and Are fixed with respect to the mask surface side first reference mark (10A (a, b)) and the photosensitive substrate surface side first reference mark (11 (a ', b')), and the other is movable. Side second reference mark (10B (c to h)) and photosensitive substrate surface side second reference mark (11 (c 'to h')), mask surface side first reference mark (10A (a, b)) and Images of the mask surface side second reference marks (10B (c to h)) by the corresponding plurality of projection optical systems (5 to 9) and the photosensitive substrate side first reference marks (11 (a ', b')). ) And the second reference mark (11 (c'-h ')) on the photosensitive substrate side, or the first reference mark ( 1 (a ', b')) and the second reference mark (11 (c'-h ')) on the photosensitive substrate side by the corresponding plurality of projection optical systems (5-9) and the mask surface side first image. Deviation amount measuring means (12 to 16, 23, 24) for measuring the amount of deviation between the first reference mark (10A (a, b)) and the mask surface side second reference mark (10B (c to h)).
And a plurality of projection optical systems (5 to 5) according to the deviation amount measured by the deviation amount measuring means (12 to 16, 23, 24).
9) Lens adjusting means (1) for correcting each image forming characteristic
7 to 21).

【０００９】また本発明においては、マスク面側第１基
準マーク（１０Ａ（ａ、ｂ））及び感光基板面側第１基
準マーク（１１（ａ′、ｂ′））は、マスク（２）面上
及び感光基板面（４）上に対応した位置に保持する十分
な剛性を有するブロツク（２２）に一体に配置するよう
にした。In the present invention, the mask-side first reference mark (10A (a, b)) and the photosensitive-substrate-side first reference mark (11 (a ', b')) are the mask (2) surface. It is arranged integrally with the block (22) having sufficient rigidity to hold it on the top and the corresponding surface of the photosensitive substrate (4).

【００１０】また本発明においては、ずれ量計測手段
（２３、２４）で、マスク面側第１基準マーク（１０Ａ
（ａ、ｂ））及び感光基板面側第１基準マーク（１１
（ａ′、ｂ′））を用いて、両端の投影光学系（５、
７）による投影像それぞれの歪をそれぞれ最小にする補
正値として、投影光学系（５、７）の投影倍率、投影像
の回転、シフトのうち少なくとも１つを調整する値を求
め、レンズ調整手段（１７、１９）によつて、補正値に
応じて両端の投影光学系（５、７）の倍率、投影像の回
転、シフトのうち少なくとも１つを変化させて結像特性
を変更し、その変更された両端の投影光学系（５、７）
による移動可能なマスク面側第２基準マーク（１０Ｂ
（ｃ〜ｈ））又は感光基板面側第２基準マークの像と、
固定された感光基板面側第２基準マーク（１１（ｃ′〜
ｈ′））又はマスク面側第２基準マークとが一致するよ
うにマスク面側第２基準マーク（１０Ｂ（ｃ〜ｈ））又
は感光基板面側第基準マークを移動させて位置決めし、
ずれ量計測手段（１２〜１６）で、マスク面側第２基準
マーク（１０Ｂ（ｃ〜ｈ））及び感光基板面側第２基準
マーク（１１（ｃ′〜ｈ′））を用いて、複数の投影光
学系（５〜９）による投影像それぞれの歪をそれぞれ最
小にする補正値として、投影光学系（５〜９）の投影倍
率、投影像の回転、シフトのうち少なくとも１つを調整
する値を求め、レンズ調整手段（１７〜２１）によつ
て、補正値に応じてそれぞれ対応する複数の投影光学系
（５〜９）の倍率、投影像の回転、シフトのうち少なく
とも１つを変化させて結像特性を補正するようにした。Further, according to the present invention, the mask surface side first reference mark (10A) is provided by the shift amount measuring means (23, 24).
(A, b)) and the first reference mark (11
(A ′, b ′)), the projection optical system (5,
As a correction value that minimizes the distortion of each projected image due to 7), a value for adjusting at least one of the projection magnification of the projection optical system (5, 7), the rotation of the projected image, and the shift is obtained, and the lens adjustment means According to (17, 19), the imaging characteristics are changed by changing at least one of the magnification of the projection optical system (5, 7) at both ends, the rotation of the projected image, and the shift according to the correction value. Modified projection optics on both ends (5, 7)
2nd fiducial mark (10B
(C to h)) or an image of the second reference mark on the photosensitive substrate surface side,
The second reference mark (11 (c '...
h ')) or the mask surface side second reference mark (10B (c to h)) or the photosensitive substrate surface side first reference mark are moved and positioned so as to match the mask surface side second reference mark,
The displacement amount measuring means (12 to 16) uses a plurality of mask surface side second reference marks (10B (c to h)) and a photosensitive substrate surface side second reference mark (11 (c 'to h')). At least one of the projection magnification, the rotation and the shift of the projection image of the projection optical system (5-9) is adjusted as a correction value that minimizes the distortion of each projection image by the projection optical system (5-9). A value is obtained, and at least one of the magnification, the rotation and the shift of the projected image of the plurality of projection optical systems (5 to 9) corresponding to the correction value is changed by the lens adjusting means (17 to 21). Then, the image forming characteristic is corrected.

【００１１】[0011]

【作用】マスク（２）面上及び感光基板面（４）上の互
いに対応する位置で、かつ複数の投影光学系（５〜９）
の配列のうち両端部の投影光学系（５、７）に対して共
役な位置に、２組のマスク面側第１基準マーク（１０Ａ
（ａ、ｂ））及び感光基板面側第１基準マーク（１１
（ａ′、ｂ′））をそれぞれ配すると共に、マスク
（２）面上及び感光基板面（４）上の互いに対応する位
置で、かつ重複する位置に対応して所定方向に１列でか
つ、１方がマスク面側第１基準マーク（１０Ａ（ａ、
ｂ））及び感光基板面側第１基準マーク（１１（ａ′、
ｂ′））に対して固定され、他方が移動可能な複数のマ
スク面側第２基準マーク（１０Ｂ（ｃ〜ｈ））及び感光
基板面側第２基準マーク（１１（ｃ′〜ｈ′））を配
し、マスク面側第１基準マーク（１０Ａ（ａ、ｂ））及
びマスク面側第２基準マーク（１０Ｂ（ｃ〜ｈ））のそ
れぞれ対応する複数の投影光学系（５〜９）による像
と、感光基板側第１基準マーク（１１（ａ′、ｂ′））
及び感光基板側第２基準マーク（１１（ｃ′〜ｈ′））
とのずれ量、若しくは感光基板側第１基準マーク（１１
（ａ′、ｂ′））及び感光基板側第２基準マーク（１１
（ｃ′〜ｈ′））のそれぞれ対応する複数の投影光学系
（５〜９）による像と、マスク面側第１基準マーク（１
０Ａ（ａ、ｂ））及びマスク面側第２基準マーク（１０
Ｂ（ｃ〜ｈ））とのずれ量を計測し、そのずれ量に応じ
て複数の投影光学系（５〜９）それぞれの結像特性を補
正する。これにより実際に投影して得られるずれ量を直
接計測して投影光学系（５〜９）を最適化することがで
き、投影光学系（５〜９）の結像特性を適正に補正し得
る。A plurality of projection optical systems (5-9) at positions corresponding to each other on the mask (2) surface and the photosensitive substrate surface (4).
Of the two sets of mask surface side first fiducial marks (10A) at positions conjugate with the projection optical system (5, 7) at both ends of the arrangement.
(A, b)) and the first reference mark (11
(A ', b') are respectively arranged, and at a position corresponding to each other on the mask (2) surface and the photosensitive substrate surface (4), and in a predetermined direction corresponding to the overlapping position, and One is the first fiducial mark (10A (a,
b)) and the first reference mark (11 (a ',
b ')), a plurality of mask surface side second reference marks (10B (c to h)) fixed and the other movable, and a photosensitive substrate surface side second reference mark (11 (c' to h ')). ) Are arranged, and the plurality of projection optical systems (5 to 9) corresponding to the mask-side first reference mark (10A (a, b)) and the mask-side second reference mark (10B (c to h)), respectively. Image and the first reference mark (11 (a ', b')) on the photosensitive substrate side
And the second reference mark (11 (c'-h ')) on the photosensitive substrate side
Or the first reference mark (11
(A ', b')) and the second reference mark (11) on the photosensitive substrate side.
(C ′ to h ′)) corresponding images by the plurality of projection optical systems (5 to 9) and the first reference mark (1) on the mask surface side.
0A (a, b)) and the mask surface side second fiducial mark (10
B (c to h)) is measured, and the imaging characteristics of each of the plurality of projection optical systems (5 to 9) are corrected according to the amount of deviation. This makes it possible to directly measure the shift amount obtained by actually projecting and optimize the projection optical system (5 to 9), and to appropriately correct the imaging characteristics of the projection optical system (5 to 9). .

【００１２】またマスク面側第１基準マーク（１０Ａ
（ａ、ｂ））及び感光基板面側第１基準マーク（１１
（ａ′、ｂ′））を、マスク（２）面上及び感光基板面
（４）上に対応した位置に保持する十分な剛性を有する
ブロツク（２２）に一体に配置するようにしたことによ
り、マスク面側第１基準マーク（１０Ａ（ａ、ｂ））及
び感光基板面側第１基準マーク（１１（ａ′、ｂ′））
の位置関係を常に一定に保つことができ、環境の変化等
により投影光学系（５〜９）の結像特性に経時的な変化
が生じても再び最良な補正を行うことができる。Further, the first reference mark (10A
(A, b)) and the first reference mark (11
(A ', b')) is integrally arranged on the block (22) having sufficient rigidity to hold the mask (2) surface and the photosensitive substrate surface (4) at corresponding positions. , The mask surface side first reference mark (10A (a, b)) and the photosensitive substrate surface side first reference mark (11 (a ', b'))
Can always be kept constant, and the best correction can be performed again even if the imaging characteristics of the projection optical system (5 to 9) change with time due to changes in the environment.

【００１３】さらにマスク面側第１基準マーク（１０Ａ
（ａ、ｂ））及び感光基板面側第１基準マーク（１１
（ａ′、ｂ′））を用いて、両端の投影光学系（５、
７）による投影像それぞれの歪をそれぞれ最小にする補
正値として、投影光学系（５、７）の投影倍率、投影像
の回転、シフトのうち少なくとも１つを調整する値を求
めて結像特性を変更し、その変更された両端の投影光学
系（５、７）による移動可能なマスク面側第２基準マー
ク（１０Ｂ（ｃ〜ｈ））又は感光基板面側第２基準マー
クの像と、固定された感光基板面側第２基準マーク（１
１（ｃ′〜ｈ′））又はマスク面側第２基準マークとが
一致するようにマスク面側第２基準マーク（１０Ｂ（ｃ
〜ｈ））又は感光基板面側第基準マークを移動させて位
置決めし、マスク面側第２基準マーク（１０Ｂ（ｃ〜
ｈ））及び感光基板面側第２基準マーク（１１（ｃ′〜
ｈ′））を用いて、複数の投影光学系（５〜９）による
投影像それぞれの歪をそれぞれ最小にする補正値とし
て、投影光学系（５〜９）の投影倍率、投影像の回転、
シフトのうち少なくとも１つを調整する値を求めて結像
特性を補正するようにしたことにより、投影光学系（５
〜９）を補正するためのマスク面側第２基準マーク（１
０Ｂ（ｃ〜ｈ））及び感光基板面側第２基準マーク（１
１（ｃ′〜ｈ′））を正しく校正することができ、かく
して複数の投影光学系（５〜９）に対してマスク（２）
及び感光基板（４）を同期させて走査して、マスク
（２）上のパターン領域の全面を正しく感光基板（４）
上に転写し得る。またマスク面側第１基準マーク（１０
Ａ（ａ、ｂ））及び感光基板面側第１基準マーク（１１
（ａ′、ｂ′））のブロツク（２２）への取り付け精度
はラフで良くなり、その分製作が容易になる。Further, the first reference mark (10A
(A, b)) and the first reference mark (11
(A ′, b ′)), the projection optical system (5,
As a correction value that minimizes the distortion of each projected image due to 7), a value that adjusts at least one of the projection magnification of the projection optical system (5, 7), the rotation of the projected image, and the shift is obtained to form the imaging characteristics. And the image of the mask surface side second fiducial mark (10B (c to h)) or the photosensitive substrate surface side second fiducial mark movable by the projection optical systems (5, 7) at the both ends thus changed, The second reference mark (1
1 (c ′ to h ′)) or the mask surface side second reference mark (10B (c)
~ H)) or the photosensitive substrate surface side second reference mark is moved and positioned, and the mask surface side second reference mark (10B (c ~
h)) and the second reference mark (11 (c '...
h ′)) is used as a correction value for minimizing the distortion of each projection image by the plurality of projection optical systems (5-9), the projection magnification of the projection optical system (5-9), the rotation of the projection image,
Since the value for adjusting at least one of the shifts is obtained to correct the imaging characteristic, the projection optical system (5
To 9) for correcting the mask surface side second reference mark (1
0B (c to h)) and the second reference mark (1
1 (c'-h ')) can be calibrated correctly, thus mask (2) for a plurality of projection optical systems (5-9).
And the photosensitive substrate (4) are synchronously scanned so that the entire surface of the pattern area on the mask (2) is correctly exposed.
Can be transcribed on. The first reference mark (10
A (a, b)) and the first reference mark (11
The accuracy of mounting (a ′, b ′)) on the block (22) is rough and good, and the manufacturing becomes easier accordingly.

【００１４】[0014]

【実施例】以下図面について、本発明の一実施例を詳述
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

【００１５】図１において、１は全体として正立正像で
拡大倍率１倍の走査型露光装置を示す。この露光装置１
はマスク２上に光束を照射する照明系３、マスク２上の
パターンを感光基板４上に投影する投影レンズ５〜９か
ら構成され、照明系３及び投影レンズ５〜９に対して、
マスク２及び感光基板４を同期させて矢印ａ０方向に走
査することにより、マスク２上のパターン領域の全面を
感光基板４上に転写し得るようになされている。またこ
の露光装置１では、投影レンズ５〜９を通じて感光基板
４上に投影されたパターンを計測するため、それぞれ対
応する位置に計測器１２〜１６が配置されている。In FIG. 1, reference numeral 1 denotes a scanning type exposure apparatus which is an erect image as a whole and which has a magnifying power of 1. This exposure apparatus 1
Is composed of an illumination system 3 for irradiating a light flux onto the mask 2 and projection lenses 5 to 9 for projecting the pattern on the mask 2 onto the photosensitive substrate 4. For the illumination system 3 and the projection lenses 5 to 9,
By scanning the mask 2 and the photosensitive substrate 4 synchronously in the direction of the arrow a0, the entire surface of the pattern area on the mask 2 can be transferred onto the photosensitive substrate 4. Further, in this exposure apparatus 1, since the patterns projected on the photosensitive substrate 4 through the projection lenses 5 to 9 are measured, the measuring instruments 12 to 16 are arranged at corresponding positions.

【００１６】投影レンズ５〜９には、計測器１２〜１６
で計測された各像のずれ量をそれぞれ調整するため、各
投影レンズ５〜９の結像特性を調整するレンズ調整機構
１７〜２１が設置されている。また照明系３、投影レン
ズ５、計測器１２は光軸に沿つて一直線上に配置され、
照明光学系３、投影レンズ６〜９と計測器１３〜１６も
それぞれ同様に配置される。このとき投影レンズ５〜９
は、投影レンズ５、６、７と投影レンズ８、９の２列に
配列され、かつ隣接するパターンの露光像が所定量オー
バーラツプするように千鳥状に配置される。このためマ
スク２上のパターンは投影レンズ５〜９によつて分割さ
れて感光基板４上に１：１で結像される。The projection lenses 5-9 include measuring instruments 12-16.
Lens adjustment mechanisms 17 to 21 for adjusting the image forming characteristics of the projection lenses 5 to 9 are installed in order to adjust the amount of deviation of each image measured in step S6. Further, the illumination system 3, the projection lens 5, and the measuring device 12 are arranged in a straight line along the optical axis,
The illumination optical system 3, the projection lenses 6 to 9 and the measuring instruments 13 to 16 are also arranged in the same manner. At this time, projection lenses 5-9
Are arranged in two rows of the projection lenses 5, 6, 7 and the projection lenses 8, 9 and are arranged in a staggered manner so that the exposure images of the adjacent patterns overlap by a predetermined amount. Therefore, the pattern on the mask 2 is divided by the projection lenses 5 to 9 and imaged on the photosensitive substrate 4 at a ratio of 1: 1.

【００１７】マスク２と感光基板４の走査方向の片側に
は、マスク２と同一面上に配されたマスク側基準マーク
１０及び感光基板４と同一面上に配された感光基板側基
準マーク１１をそれぞれ有するコ字形状のブロツク２２
が配設され、マスク２及び感光基板４と共に走査露光用
のキヤリツジ（図示せず）上に配設される。この露光装
置１では、マスク側基準マーク１０及び感光基板側基準
マーク１１を用いて、投影レンズ５〜９の結像特性（例
えばデイストーシヨン）を計測し得るようになされてい
る。On one side of the mask 2 and the photosensitive substrate 4 in the scanning direction, a mask side reference mark 10 arranged on the same surface as the mask 2 and a photosensitive substrate side reference mark 11 arranged on the same surface as the photosensitive substrate 4. U-shaped block 22 each having
Is provided on the carriage (not shown) for scanning exposure together with the mask 2 and the photosensitive substrate 4. In the exposure apparatus 1, the image forming characteristics (for example, distortion) of the projection lenses 5 to 9 can be measured by using the mask side reference mark 10 and the photosensitive substrate side reference mark 11.

【００１８】この実施例の場合、マスク側基準マーク１
０及び感光基板側基準マーク１１としてブロツク２２に
は感光基板側基準マーク１１と、マスク側固定マーク１
０Ａが取り付けられ、マスク２が載置されたマスクステ
ージ２Ａにマスク側可動マーク１０Ｂが取り付けられて
いる。マスクステージ２Ａと感光基板４が載置された感
光基板ホルダ４Ａとブロツク２２とはキヤリツジに取り
付けられ、１体となつて照明系３及び投影レンズ５〜９
に対し移動する。In the case of this embodiment, the mask side reference mark 1
0 and the reference mark 11 on the photosensitive substrate side, the reference mark 11 on the photosensitive substrate side and the fixed mark 1 on the mask side on the block 22.
0A is attached, and the mask side movable mark 10B is attached to the mask stage 2A on which the mask 2 is placed. The mask stage 2A, the photosensitive substrate holder 4A on which the photosensitive substrate 4 is placed, and the block 22 are attached to a carriage, and they are integrated into one body to form the illumination system 3 and the projection lenses 5 to 9.
Move against.

【００１９】マスクステージ２Ａには、キヤリツジ上で
ブロツク２２及び感光基板ホルダ４Ａに対してＸ、Ｙ、
θ方向に移動できるよう移動機構（図示せず）が取り付
けられ、また感光基板ホルダ４Ａに対するその位置がモ
ニタできるようレーザ干渉計（図示せず）が設けられて
いる。また最も外側の投影レンズ５、７と照明系３との
間には、投影レンズ５、７によつてマスク２上に結像さ
れた感光基板４上のアライメントマークと、マスク２上
のアライメントマークのずれ量を計測するアライメント
顕微鏡２３、２４が設置されている。このアライメント
顕微鏡２３、２４は比較的広い視野に選定され、マスク
側基準マーク１０及び感光基板側基準マーク１１の校正
の際の観察系を兼ねるようになされている。On the mask stage 2A, X, Y, and X are attached to the block 22 and the photosensitive substrate holder 4A on the carriage.
A moving mechanism (not shown) is attached so as to move in the θ direction, and a laser interferometer (not shown) is provided so that its position with respect to the photosensitive substrate holder 4A can be monitored. Further, between the outermost projection lenses 5 and 7 and the illumination system 3, an alignment mark formed on the mask 2 by the projection lenses 5 and 7 and an alignment mark on the mask 2 are formed. Alignment microscopes 23 and 24 for measuring the amount of deviation are installed. The alignment microscopes 23 and 24 are selected in a relatively wide field of view, and also serve as an observation system when the mask side reference mark 10 and the photosensitive substrate side reference mark 11 are calibrated.

【００２０】マスク側基準マーク１０と感光基板側基準
マーク１１を図２に示す。マスク側基準マーク１０（図
２（Ａ））のうち、ブロツク２２に固定されたマスク側
固定マーク１０Ａは最も外側の投影レンズ５、７の露光
領域毎に、少なくとも１つ以上の計測マークａ、ｂが含
まれるように形成される。またマスク側可動マーク１０
Ｂは、各投影レンズ５〜９の露光領域に少なくとも２つ
以上の計測マークｃ〜ｈが含まれるように形成されてい
る。一方これらのマスク側基準マーク１０と対になる感
光基板側基準マーク１１は、マスク側固定マーク１０Ａ
とマスク側可動マーク１０Ｂの両方の計測マークａ〜ｈ
にそれぞれ対応するように１体の計測マークａ′〜ｈ′
が精度良く形成されている。The mask side reference mark 10 and the photosensitive substrate side reference mark 11 are shown in FIG. Of the mask side reference mark 10 (FIG. 2A), the mask side fixed mark 10A fixed to the block 22 has at least one or more measurement marks a for each exposure area of the outermost projection lenses 5 and 7. b is included. The movable mark 10 on the mask side
B is formed such that at least two or more measurement marks c to h are included in the exposure areas of the projection lenses 5 to 9. On the other hand, the photosensitive substrate side reference mark 11 paired with the mask side reference mark 10 is the mask side fixed mark 10A.
And both measurement marks a to h of the movable mark 10B on the mask side
One measurement mark a ′ to h ′ corresponding to
Are accurately formed.

【００２１】以上の構成において、まず感光基板側基準
マーク１１とマスク側固定マーク１０Ａにより外側にあ
る投影レンズ５、７の校正を、図３及び図４に示す。キ
ヤリツジを投影レンズ５、７に対して、マスク側固定マ
ーク１０Ａの計測マークａと感光基板側基準マーク１１
の計測マークａ′が共役な位置になるまで移動し、計測
マークａ′を投影レンズ５により計測マークａ上に投影
し、図４（Ａ）に示すように、アライメント顕微鏡２３
により投影像と計測マークａのズレ量Δｘ1 、Δｙ1 を
計測する。そしてずれ量Δｘ1 、Δｙ1 が、図４（Ｂ）
に示すように、０となるように投影レンズ５のレンズ調
整機構１７により、例えば像シフトさせるように計測マ
ークａ′の像を移動する。同様にアライメント顕微鏡２
４と計測マークｂ、ｂ′により投影光学系７の調整を行
なう。In the above structure, first, FIGS. 3 and 4 show the calibration of the projection lenses 5 and 7 located outside by the photosensitive substrate side reference mark 11 and the mask side fixed mark 10A. The carriage is attached to the projection lenses 5 and 7, and the measurement mark a of the mask side fixed mark 10A and the photosensitive substrate side reference mark 11
Of the measurement mark a ′ is moved to a conjugate position, the measurement mark a ′ is projected onto the measurement mark a by the projection lens 5, and as shown in FIG.
The deviation amounts Δx 1 and Δy 1 between the projected image and the measurement mark a are measured by. The deviation amounts Δx 1 and Δy 1 are shown in FIG.
As shown in, the lens adjustment mechanism 17 of the projection lens 5 moves the image of the measurement mark a ′ so as to shift the image so that it becomes zero. Similarly, alignment microscope 2
The projection optical system 7 is adjusted with reference numeral 4 and the measurement marks b and b '.

【００２２】次に図５及び図６に示すように、マスク側
可動マーク１０Ｂのキヤリブレーシヨンを行なう。すな
わちキヤリツジを投影レンズ５に対し、マスク側可動マ
ーク１０Ｂの計測マークｃと感光基板側基準マーク１１
の計測マークｃ′が共役になる位置に移動する。このと
き投影レンズ７に対しマスク側可動マーク１０Ｂの計測
マークｈと、感光基板側基準マーク１１の計測マーク
ｈ′が共役になるようキヤリツジを移動する。なおこの
とき投影レンズ５に対し、計測マークａと計測マークｃ
は図２のＹ方向の位置が同じ位置かほぼ近い位置が良
い。また計測マークｂと計測マークｈも同様である。Next, as shown in FIGS. 5 and 6, the mask side movable mark 10B is calibrated. That is, the carriage is attached to the projection lens 5 with the measurement mark c of the movable mark 10B on the mask side and the reference mark 11 on the photosensitive substrate side.
The measurement mark c ′ of 1 moves to a position where it becomes conjugate. At this time, the carriage is moved so that the measurement mark h of the mask side movable mark 10B and the measurement mark h ′ of the photosensitive substrate side reference mark 11 are conjugated with respect to the projection lens 7. At this time, the measurement mark a and the measurement mark c are attached to the projection lens 5.
Is preferably at the same position or a position close to each other in the Y direction of FIG. The same applies to the measurement mark b and the measurement mark h.

【００２３】そして計測マークｃ′をすでに計測マーク
ａで調整した投影レンズ５により、計測マークｃ上に投
影し、アライメント顕微鏡２３により投影像と計測マー
クｃのずれ量Δｘ2 、Δｙ2 を計測する。同様に計測マ
ークｈとｈ′のずれ量Δｘ3、Δｙ3 を計測し、ずれ量
Δｘ2 、Δｙ2 、Δｘ3 、Δｙ3 がそれぞれ小さくなる
ようマスクステージ２Ａを、Ｘ、Ｙ及びθ方向に移動す
る。Then, the measurement mark c'is projected onto the measurement mark c by the projection lens 5 already adjusted by the measurement mark a, and the alignment microscope 23 measures the deviation amounts Δx 2 and Δy 2 between the projected image and the measurement mark c. . Similarly, the deviation amounts Δx 3 and Δy 3 between the measurement marks h and h ′ are measured, and the mask stage 2A is moved in the X, Y, and θ directions so that the deviation amounts Δx 2 , Δy 2 , Δx 3 , and Δy 3 become smaller. Moving.

【００２４】このようにしてマスクステージ２Ａを移動
することにより、図６（Ａ）に示すように、計測マーク
ｃ、ｃ′及びｈ、ｈ′間のずれ量が無くなる。しかしマ
スク側固定マーク１０Ａと感光基板側基準マーク１１の
ブロツク２２への取り付けに設計値に対する誤差がある
場合（即ちこの場合、マスク側固定マーク１０Ａと感光
基板側基準マーク１１とを２次元的に一致させても（最
良の結像特性の）投影光学系を介した場合に、マスク側
固定マーク１０Ａ又は感光基板側基準マーク１１の像
と、マスク側固定マーク１０Ａ又は感光基板側基準マー
ク１１が一致しない。）、その誤差がそのままマスク側
可動マーク１０Ｂの位置に含まれてしまう。このため誤
差がある場合マスク側基準マーク１０Ａに対する感光基
板側基準マーク１１の誤差量αｘ及びαｙを予め計測し
ておき、マスクステージ２Ａの移動の際、図６（Ｂ）に
示すように、当該誤差量αｘ及びαｙを加算する。By moving the mask stage 2A in this manner, as shown in FIG. 6A, the amount of deviation between the measurement marks c, c'and h, h'is eliminated. However, when the mask side fixing mark 10A and the photosensitive substrate side reference mark 11 are attached to the block 22 with an error with respect to the design value (that is, in this case, the mask side fixing mark 10A and the photosensitive substrate side reference mark 11 are two-dimensionally). Even if they coincide with each other, the image of the mask-side fixed mark 10A or the photosensitive substrate-side reference mark 11 and the image of the mask-side fixed mark 10A or the photosensitive substrate-side reference mark 11 are obtained through the projection optical system (of the best imaging characteristic). However, the error is included in the position of the mask side movable mark 10B as it is. Therefore, if there is an error, the error amounts αx and αy of the photosensitive substrate side reference mark 11 with respect to the mask side reference mark 10A are measured in advance, and when the mask stage 2A is moved, as shown in FIG. The error amounts αx and αy are added.

【００２５】このようにして基準となるマスク側可動マ
ーク１０Ｂの校正を終了し、次に図７（Ａ）及び図７
（Ｂ）に示すように、投影レンズ５〜９の校正を行な
う。このとき投影レンズ６、８、９はもちろんのこと外
側の投影レンズ５、７についても、校正されたマスク側
可動マーク１０Ｂの各計測マークｃ〜ｈと、感光基板側
基準マーク１１の各計測マークｃ′〜ｈ′との間のずれ
量を計測器１２〜１６で計測し、当該計測結果でなるず
れ量に基づいて、キヤリブレーシヨンする。In this way, the calibration of the mask side movable mark 10B serving as a reference is completed, and then the steps shown in FIGS.
As shown in (B), the projection lenses 5 to 9 are calibrated. At this time, not only the projection lenses 6, 8 and 9 but also the projection lenses 5 and 7 on the outer side, the respective measurement marks c to h of the calibrated mask side movable mark 10B and the respective measurement marks of the photosensitive substrate side reference mark 11 are calibrated. The deviation amount between c ′ and h ′ is measured by the measuring devices 12 to 16, and the calibration is performed based on the deviation amount obtained by the measurement result.

【００２６】以上の構成によれば、投影レンズ５〜９を
校正する前に、基準となる感光基板側基準マーク１１の
各計測マークｃ′〜ｈ′と、マスク側可動マーク１１Ｂ
の計測マークｃ〜ｈの位置を校正するようにしたことに
より、高い精度で投影レンズ５〜９を校正することがで
き、かくして複数の投影レンズ５〜９に対してマスク２
及び感光基板４を同期させて走査して、マスク２上のパ
ターン領域の全面を正しく感光基板４上に転写し得る。
また上述の構成によれば、感光基板側基準マーク１１や
マスク側固定マーク１０Ａのブロツク２２への取り付け
や、マスク側可動マーク１０Ｂのマスクステージ２Ａへ
の取り付け精度はラフで良くなり、その分製作が容易に
なる。According to the above construction, before the projection lenses 5 to 9 are calibrated, the respective measurement marks c'to h'of the reference mark 11 on the photosensitive substrate side and the movable mark 11B on the mask side are calibrated.
By calibrating the positions of the measurement marks c to h, the projection lenses 5 to 9 can be calibrated with high accuracy, and thus the mask 2 can be used for the plurality of projection lenses 5 to 9.
Also, the photosensitive substrate 4 can be synchronously scanned to properly transfer the entire surface of the pattern region on the mask 2 onto the photosensitive substrate 4.
Further, according to the above-described configuration, the accuracy of attaching the photosensitive substrate-side reference mark 11 and the mask-side fixed mark 10A to the block 22 and the attachment accuracy of the mask-side movable mark 10B to the mask stage 2A are rough and good. Will be easier.

【００２７】なお上述の実施例においては、マスク側固
定マーク１０Ａの計測マークａ、ｂと、感光基板側基準
マーク１１の計測マークａ′、ｂ′の誤差量αｘ、αｙ
を、予め取り付け寸法を計測するようにしたが、これに
代え、予め誤差量αｘ、αｙをそれぞれ０として校正を
行ない、最終的に露光によりオフセツトとして誤差量α
ｘ、αｙを求めるようにしても、上述の実施例と同様の
効果を実現できる。In the above embodiment, the error amounts αx and αy between the measurement marks a and b of the mask side fixed mark 10A and the measurement marks a ′ and b ′ of the photosensitive substrate side reference mark 11 are used.
However, instead of this, the calibration is performed by setting the error amounts αx and αy to 0 in advance, and finally, the error amount α is set as an offset by exposure.
Even if x and αy are obtained, the same effect as that of the above-described embodiment can be realized.

【００２８】また上述の実施例においては、感光基板側
基準マーク１１及びマスク側可動マーク１０Ｂの校正に
は、アライメント顕微鏡２３、２４を使用し、投影レン
ズ５〜９の校正には専用の計測器１２〜１６を使用した
場合について述べたが、両方を兼用するセンサを用いる
ようにしても良く。この場合観察系を広視野に切り換え
たり、分解能を高く切り換えたりする機構を有するセン
サを用いれば、上述の実施例と同様の効果を実現でき
る。In the above embodiment, the alignment microscopes 23 and 24 are used to calibrate the photosensitive substrate side reference mark 11 and the mask side movable mark 10B, and a dedicated measuring instrument is used to calibrate the projection lenses 5 to 9. Although the case where 12 to 16 are used has been described, a sensor that serves both may be used. In this case, if a sensor having a mechanism for switching the observation system to a wide field of view or switching the resolution to high is used, the same effect as that of the above-described embodiment can be realized.

【００２９】さらに上述の実施例においては、本発明を
投影レンズが５本並んだ走査型露光装置に適用した場合
について述べたが、投影レンズの本数は何本でもよく、
また投影レンズとしてもマスク面の像が感光基板面上に
結像すれば良いので、反射ミラーを使用した投影光学系
でもよい。また投影光学系は縮小又は拡大系でも上述の
実施例と同様の効果を実現できる。Further, in the above-mentioned embodiments, the case where the present invention is applied to the scanning type exposure apparatus in which five projection lenses are arranged is described, but the number of projection lenses may be any number,
Further, since the image of the mask surface may be formed on the surface of the photosensitive substrate as the projection lens, a projection optical system using a reflection mirror may be used. Further, even if the projection optical system is a reduction or enlargement system, the same effect as that of the above-described embodiment can be realized.

【００３０】[0030]

【発明の効果】上述のように本発明によれば、マスク面
上及び感光基板面上の互いに対応し両端部の投影光学系
に共役な位置に、２組のマスク面側第１基準マーク及び
感光基板面側第１基準マークをそれぞれ配すると共に、
マスク面上及び感光基板面上の互いに対応し、かつ重複
する位置に所定方向に１列でかつ、１方がマスク面側第
１基準マーク及び感光基板面側第１基準マークに対して
固定され、他方が移動可能な複数のマスク面側第２基準
マーク及び感光基板面側第２基準マークを配し、基準マ
ークのそれぞれ対応する複数の投影光学系による像と、
基準マークとのずれ量を計測し、そのずれ量に応じて複
数の投影光学系それぞれの結像特性を補正する。これに
より実際に投影して得られるずれ量を直接計測して各投
影光学系の結像特性を調整するため、投影光学系の結像
特性を適正に補正し得る露光装置を実現できる。As described above, according to the present invention, two sets of mask surface side first fiducial marks are provided at positions corresponding to each other on the mask surface and the photosensitive substrate surface and conjugate to the projection optical system at both ends. While arranging the first reference marks on the photosensitive substrate surface side,
One row in a predetermined direction at a position corresponding to and overlapping each other on the mask surface and the photosensitive substrate surface, and one of them is fixed to the mask surface side first reference mark and the photosensitive substrate surface side first reference mark. , A plurality of mask surface side second reference marks and a photosensitive substrate surface side second reference mark, the other of which is movable, and images of a plurality of projection optical systems corresponding to the respective reference marks,
The amount of deviation from the reference mark is measured, and the imaging characteristics of each of the plurality of projection optical systems are corrected according to the amount of deviation. As a result, the amount of deviation actually obtained by projection is directly measured to adjust the image forming characteristics of each projection optical system, so that an exposure apparatus capable of appropriately correcting the image forming characteristics of the projection optical system can be realized.

【００３１】またマスク面側第１基準マーク及び感光基
板面側第１基準マークを、マスク面上及び感光基板面上
に対応した位置に保持する十分な剛性を有するブロツク
に一体に配置するようにしたことにより、マスク面側第
１基準マーク及び感光基板面側第１基準マークの位置関
係を常に一定に保つことができ、環境の変化等により投
影光学系の結像特性に経時的な変化が生じても再び最良
な補正を行うことができる露光装置を実現できる。Also, the mask surface side first reference mark and the photosensitive substrate surface side first reference mark are integrally arranged on a block having sufficient rigidity to hold the mask surface side and the photosensitive substrate surface side first reference mark at corresponding positions on the mask surface and the photosensitive substrate surface. By doing so, the positional relationship between the mask-side first reference mark and the photosensitive-substrate-side first reference mark can always be kept constant, and the imaging characteristics of the projection optical system will not change over time due to changes in the environment. Even if it occurs, it is possible to realize an exposure apparatus that can perform the best correction again.

【００３２】さらにマスク面側第１基準マーク及び感光
基板面側第１基準マークを用いて、両端の投影光学系に
よる投影像それぞれの歪をそれぞれ最小にする補正値と
して、投影光学系の投影倍率、投影像の回転、シフトの
うち少なくとも１つを調整する値を求めて結像特性を変
更し、その変更された両端の投影光学系による移動可能
なマスク面側第２基準マーク又は感光基板面側第２基準
マークの像と、固定された感光基板面側第２基準マーク
又はマスク面側第２基準マークとが一致するようにマス
ク面側第２基準マーク又は感光基板面側第２基準マーク
を移動させて位置決めし、マスク面側第２基準マーク及
び感光基板面側第２基準マークを用いて、複数の投影光
学系による投影像それぞれの歪をそれぞれ最小にする補
正値として、投影光学系の投影倍率、投影像の回転、シ
フトのうち少なくとも１つを調整する値を求めて結像特
性を補正するようにしたことにより、投影光学系を補正
するためのマスク面側第２基準マーク及び感光基板面側
第２基準マークを正しく校正することができ、かくして
複数の投影光学系に対してマスク及び感光基板を同期さ
せて走査して、マスク上のパターン領域の全面を正しく
感光基板上に転写し得る露光装置を実現できる。またマ
スク面側第１基準マーク及び感光基板面側第１基準マー
クのブロツクへの取り付け精度はラフで良くなり、その
分製作が容易になる。Further, by using the first reference mark on the mask surface side and the first reference mark on the photosensitive substrate surface side, the projection magnification of the projection optical system is set as a correction value for minimizing the distortion of each projected image by the projection optical system at both ends. , A value for adjusting at least one of the rotation and shift of the projected image is changed to change the imaging characteristic, and the changed mask surface side second fiducial mark or photosensitive substrate surface by the projection optical system at the both ends is changed. The second reference mark on the mask surface side or the second reference mark on the photosensitive substrate surface side so that the image of the second reference mark on the side and the fixed second reference mark on the surface of the photosensitive substrate or the second reference mark on the mask surface side are aligned. Are positioned by moving the second reference mark on the mask surface side and the second reference mark on the photosensitive substrate surface side, and projection is performed as a correction value that minimizes the distortion of each projected image by the plurality of projection optical systems. The mask surface side second reference for correcting the projection optical system by obtaining the value for adjusting at least one of the projection magnification, the rotation and the shift of the projection image of the academic system to correct the imaging characteristic. The mark and the second reference mark on the surface side of the photosensitive substrate can be correctly calibrated, and thus the mask and the photosensitive substrate can be scanned synchronously with respect to a plurality of projection optical systems so that the entire surface of the pattern area on the mask is correctly corrected. It is possible to realize an exposure device that can be transferred on top. Further, the accuracy of attaching the mask-side first reference mark and the photosensitive-substrate-side first reference mark to the block is rough and good, and the manufacturing becomes easier accordingly.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による走査型露光装置の一実施例を示す
略線図である。FIG. 1 is a schematic diagram showing an embodiment of a scanning exposure apparatus according to the present invention.

【図２】マスク側基準マークと感光基板側基準マークの
マーク構成の説明に供する略線図である。FIG. 2 is a schematic diagram used to describe a mark configuration of a mask side reference mark and a photosensitive substrate side reference mark.

【図３】マスク側固定マークを用いた両端の投影レンズ
の校正の説明に供する略線図である。FIG. 3 is a schematic diagram used for explaining calibration of projection lenses at both ends using a mask-side fixing mark.

【図４】マスク側固定マークを用いた両端の投影レンズ
の校正の説明に供する略線図である。FIG. 4 is a schematic diagram for explaining calibration of projection lenses at both ends using a mask-side fixing mark.

【図５】マスク側可動マークの校正の説明に供する略線
図である。FIG. 5 is a schematic diagram used for explaining calibration of a mask-side movable mark.

【図６】マスク側可動マークの校正の説明に供する略線
図である。FIG. 6 is a schematic diagram for explaining calibration of a mask-side movable mark.

【図７】マスク側可動マーク及び感光基板側基準マーク
による投影レンズの調整の説明に供する略線図である。FIG. 7 is a schematic diagram for explaining adjustment of a projection lens using a mask side movable mark and a photosensitive substrate side reference mark.

【符号の説明】[Explanation of symbols]

１……露光装置、２……マスク、３……照明系、４……
感光基板、５〜９……投影レンズ、１０……マスク側基
準マーク、１１……感光基板側基準マーク、１２〜１６
……計測器、１７〜２１……レンズ調整機構、２２……
ブロツク、２３、２４……アライメント顕微鏡。1 ... exposure device, 2 ... mask, 3 ... illumination system, 4 ...
Photosensitive substrate, 5 to 9 ... Projection lens, 10 ... Mask side reference mark, 11 ... Photosensitive substrate side reference mark, 12 to 16
...... Measuring instrument, 17-21 …… Lens adjustment mechanism, 22 ……
Blocks, 23, 24 ... Alignment microscope.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/30 ５２６ Ａ (72)発明者 奈良部 毅 東京都千代田区丸の内３丁目２番３号株式 会社ニコン内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Reference number within the agency FI Technical indication H01L 21/30 526 A (72) Inventor Take Narabe 3 2-3 Marunouchi, Chiyoda-ku, Tokyo Stock Company Nikon

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】光源の光束をマスクのパターン領域内の複
数の部分領域に照射する複数の照明光学系と、所定方向
に沿い、かつ該所定方向の直交方向に互いに変位して配
置され、前記マスクを透過した前記光束により前記複数
の部分領域それぞれの像を、隣合う前記像の前記所定方
向の位置を互いに重複させて感光基板上に投影する複数
の投影光学系と、該投影光学系に対して、前記所定方向
の略直交方向に、前記マスク及び前記感光基板を同期さ
せて走査する走査手段とを有し、前記マスクと前記感光
基板とを前記投影光学系に対して走査することにより、
前記マスクの前記パターン領域の全面を前記感光基板上
に転写する露光装置において、 前記マスク面上及び前記感光基板面上の互いに対応する
位置で、かつ前記複数の投影光学系の配列のうち両端部
の投影光学系に対して共役な位置にそれぞれ配された２
組のマスク面側第１基準マーク及び感光基板面側第１基
準マークと、 前記マスク面上及び前記感光基板面上の互いに対応する
位置で、かつ前記重複する位置に対応して前記所定方向
に１列に配され、１方が前記マスク面側第１基準マーク
及び前記感光基板面側第１基準マークに対して固定さ
れ、他方が移動可能な複数のマスク面側第２基準マーク
及び感光基板面側第２基準マークと、 前記マスク面側第１基準マーク及び前記マスク面側第２
基準マークの、それぞれ対応する前記複数の投影光学系
による像と、前記感光基板側第１基準マーク及び前記感
光基板側第２基準マークとのずれ量、若しくは前記感光
基板側第１基準マーク及び前記感光基板側第２基準マー
クの、それぞれ対応する前記複数の投影光学系による像
と、前記マスク面側第１基準マーク及び前記マスク面側
第２基準マークとのずれ量を計測するずれ量計測手段
と、 該ずれ量計測手段で計測された前記ずれ量に応じて、前
記複数の投影光学系それぞれの結像特性を補正するレン
ズ調整手段とを具えることを特徴とする露光装置。1. A plurality of illumination optical systems for irradiating a plurality of partial areas in a pattern area of a mask with a light beam of a light source, and a plurality of illumination optical systems arranged along a predetermined direction and displaced from each other in a direction orthogonal to the predetermined direction. A plurality of projection optical systems that project the images of the plurality of partial regions by the light flux that has passed through the mask onto the photosensitive substrate by overlapping the positions of the adjacent images in the predetermined direction with each other; On the other hand, a scanning unit that scans the mask and the photosensitive substrate in synchronization with each other in a direction substantially orthogonal to the predetermined direction, and scans the mask and the photosensitive substrate with respect to the projection optical system. ,
In an exposure apparatus that transfers the entire surface of the pattern area of the mask onto the photosensitive substrate, both ends of the array of the plurality of projection optical systems at positions corresponding to each other on the mask surface and the photosensitive substrate surface. 2 arranged at conjugate positions with respect to the projection optical system of
A pair of mask surface side first reference marks and photosensitive substrate surface side first reference marks, at positions corresponding to each other on the mask surface and the photosensitive substrate surface, and in the predetermined direction corresponding to the overlapping positions. A plurality of mask surface side second reference marks and photosensitive substrates arranged in one row, one of which is fixed with respect to the mask surface side first reference mark and the photosensitive substrate surface side first reference mark, and the other of which is movable A surface side second fiducial mark, the mask surface side first fiducial mark and the mask surface side second
The amount of deviation of the reference mark between the corresponding plurality of projection optical systems and the first reference mark on the photosensitive substrate side and the second reference mark on the photosensitive substrate side, or the first reference mark on the photosensitive substrate side and the first reference mark Displacement amount measuring means for measuring the amount of displacement between the mask surface side first reference mark and the mask surface side second reference mark, and the images of the photosensitive substrate side second reference mark respectively corresponding to the plurality of projection optical systems. An exposure apparatus comprising: a lens adjusting unit that corrects image forming characteristics of each of the plurality of projection optical systems according to the shift amount measured by the shift amount measuring unit. 【請求項２】前記マスク面側第１基準マーク及び前記感
光基板面側第１基準マークは、前記マスク面上及び前記
感光基板面上に対応した位置に保持する十分な剛性を有
するブロツクに一体に配置することを特徴とする請求項
１に記載の露光装置。2. The mask surface side first reference mark and the photosensitive substrate surface side first reference mark are integrated with a block having sufficient rigidity to hold the mask surface side and the photosensitive substrate surface side corresponding positions on the mask surface and the photosensitive substrate surface. The exposure apparatus according to claim 1, wherein the exposure apparatus is arranged in the. 【請求項３】前記ずれ量計測手段で、前記マスク面側第
１基準マーク及び前記感光基板面側第１基準マークを用
いて、前記両端の投影光学系による投影像それぞれの歪
をそれぞれ最小にする補正値として、前記投影光学系の
投影倍率、前記投影像の回転、シフトのうち少なくとも
１つを調整する値を求め、 前記レンズ調整手段によつて、前記補正値に応じて前記
両端の投影光学系の倍率、前記投影像の回転、シフトの
うち少なくとも１つを変化させて結像特性を変更し、 該変更された前記両端の投影光学系による前記移動可能
な前記マスク面側第２基準マーク又は前記感光基板面側
第２基準マークの像と、前記固定された前記感光基板面
側第２基準マーク又は前記マスク面側第２基準マークと
が一致するように前記マスク面側第２基準マーク又は前
記感光基板面側第２基準マークを移動させて位置決め
し、 前記ずれ量計測手段で、前記マスク面側第２基準マーク
及び前記感光基板面側第２基準マークを用いて、前記複
数の投影光学系による投影像それぞれの歪をそれぞれ最
小にする補正値として、前記投影光学系の投影倍率、前
記投影像の回転、シフトのうち少なくとも１つを調整す
る値を求め、 前記レンズ調整手段によつて、前記補正値に応じてそれ
ぞれ対応する前記複数の投影光学系の倍率、前記投影像
の回転、シフトのうち少なくとも１つを変化させて前記
結像特性を補正するようにしたことを特徴とする請求項
１に記載の露光装置。3. The displacement amount measuring means minimizes the distortion of each projected image by the projection optical systems at the both ends by using the mask surface side first reference mark and the photosensitive substrate surface side first reference mark. As the correction value to be obtained, a value for adjusting at least one of the projection magnification of the projection optical system, the rotation of the projection image, and the shift is obtained, and the lens adjusting means projects the projections of the both ends according to the correction value. At least one of a magnification of an optical system, a rotation and a shift of the projected image is changed to change an imaging characteristic, and the movable second mask surface side reference by the changed projection optical systems at both ends. The mask surface side second reference so that the image of the mark or the photosensitive substrate surface side second reference mark matches the fixed photosensitive substrate surface side second reference mark or the mask surface side second reference mark. Mar Or, the photosensitive substrate surface side second reference mark is moved and positioned, and the displacement amount measuring means uses the mask surface side second reference mark and the photosensitive substrate surface side second reference mark to project the plurality of projections. A value for adjusting at least one of the projection magnification of the projection optical system, the rotation of the projection image, and the shift is obtained as a correction value that minimizes the distortion of each projection image by the optical system. The image forming characteristic is corrected by changing at least one of the magnification of the plurality of projection optical systems, the rotation of the projection image, and the shift of the projection image corresponding to the correction value. The exposure apparatus according to claim 1.
JP6215312A 1994-08-16 1994-08-16 Aligner Pending JPH0855784A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6215312A JPH0855784A (en) 1994-08-16 1994-08-16 Aligner
KR1019950025127A KR100381629B1 (en) 1994-08-16 1995-08-16 Exposure device
US08/515,783 US5617211A (en) 1994-08-16 1995-08-16 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6215312A JPH0855784A (en) 1994-08-16 1994-08-16 Aligner

Publications (1)

Publication Number Publication Date
JPH0855784A true JPH0855784A (en) 1996-02-27

Family

ID=16670238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6215312A Pending JPH0855784A (en) 1994-08-16 1994-08-16 Aligner

Country Status (1)

Country Link
JP (1) JPH0855784A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5999244A (en) * 1995-11-07 1999-12-07 Nikon Corporation Projection exposure apparatus, method for correcting positional discrepancy of projected image, and method for determining image formation characteristic of projection optical system
KR100845761B1 (en) * 2000-04-24 2008-07-11 가부시키가이샤 니콘 Scanning exposure method and scanning type exposure apparatus
JP2010217207A (en) * 2009-03-13 2010-09-30 Nikon Corp Transfer device, transfer method and method for manufacturing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5999244A (en) * 1995-11-07 1999-12-07 Nikon Corporation Projection exposure apparatus, method for correcting positional discrepancy of projected image, and method for determining image formation characteristic of projection optical system
KR100845761B1 (en) * 2000-04-24 2008-07-11 가부시키가이샤 니콘 Scanning exposure method and scanning type exposure apparatus
JP2010217207A (en) * 2009-03-13 2010-09-30 Nikon Corp Transfer device, transfer method and method for manufacturing device

Similar Documents

Publication Publication Date Title
US5617211A (en) Exposure apparatus
EP0509797B1 (en) Projection exposure apparatus
USRE37361E1 (en) Scanning type exposure apparatus and exposure method
KR100330069B1 (en) Scanning exposure apparatus and its exposure method
US5850279A (en) Alignment method, projection exposure method, and projection exposure apparatus
JP5457767B2 (en) Exposure apparatus and device manufacturing method
JP2004327660A (en) Scanning projection aligner, exposure method, and device manufacturing method
KR100471461B1 (en) Exposure method and exposure apparatus
US20020080338A1 (en) Projection exposure apparatus
US5999244A (en) Projection exposure apparatus, method for correcting positional discrepancy of projected image, and method for determining image formation characteristic of projection optical system
US20060082775A1 (en) Mark position detecting apparatus
JPH09237752A (en) Adjustment of projection optical system and projection aligner using it
JP3460129B2 (en) Exposure apparatus and exposure method
JP2001296667A (en) Scanning exposure method and scanning type aligner, and mask
JPH1012515A (en) Projection aligner
US6975399B2 (en) mark position detecting apparatus
JP3617657B2 (en) Misalignment correction method
JP3458477B2 (en) Exposure apparatus and exposure method
JP3506155B2 (en) Projection exposure equipment
JP4029130B2 (en) Exposure apparatus and exposure method
JPH0855784A (en) Aligner
JP3448819B2 (en) Scanning exposure equipment
JP3282681B2 (en) Exposure method, exposure apparatus, and element manufacturing method
JP2003031461A (en) Exposure system and method of exposure
JPH09306811A (en) Method for exposure