JPH083735A - Production of thin film - Google Patents
Production of thin filmInfo
- Publication number
- JPH083735A JPH083735A JP13313794A JP13313794A JPH083735A JP H083735 A JPH083735 A JP H083735A JP 13313794 A JP13313794 A JP 13313794A JP 13313794 A JP13313794 A JP 13313794A JP H083735 A JPH083735 A JP H083735A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- thin film
- cathode
- hearth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、特にイオンプレーティ
ング成膜法を用いて基板に薄膜を形成する薄膜作製方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention particularly relates to a thin film forming method for forming a thin film on a substrate using an ion plating film forming method.
【０００２】[0002]
【従来の技術】図３は従来のスパッタリング法を用いた
成膜装置の概略を示す構成図である。同図中、１０１は
真空ポンプで排気される真空槽、１０２は不活性ガスを
導入するためのガス導入口、１０３はターゲットに取り
付けたカソード、１０４はカソード１０３に対向して設
けられたアノードで、基板１０５を保持する基板ホルダ
ーなどとして形成されている。１０６は放電用の高圧電
源、１０７はカソード１０３を水冷する冷却水の配管を
通すための絶縁体である。2. Description of the Related Art FIG. 3 is a schematic view of a film forming apparatus using a conventional sputtering method. In the figure, 101 is a vacuum chamber evacuated by a vacuum pump, 102 is a gas inlet for introducing an inert gas, 103 is a cathode attached to a target, and 104 is an anode provided opposite to the cathode 103. It is formed as a substrate holder for holding the substrate 105. Reference numeral 106 is a high-voltage power supply for discharge, and 107 is an insulator for passing cooling water piping for cooling the cathode 103 with water.
【０００３】スパッタリングは、まず１０-4Ｐａ程度に
排気された真空槽１０１に０．１Ｐａ程度までになるよ
うに不活性ガス（主にＡｒ）をガス導入口１０２から入
れ、ターゲットに取り付けたカソード１０３及びこれと
対向するアノード１０４の間に直流あるいは交流の高電
圧（数百Ｖ）を印加して、グロー放電を起こさせる。そ
して、放電によってプラスにイオン化された不活性ガス
は、カソード１０３にあるターゲットに入射し、ターゲ
ット材をスパッタリングし、基板１０５上に必要とする
薄膜を形成する、また、図４は従来の電子ビーム蒸着法
を用いた成膜装置の概略を示す構成図である。同図中、
１１０はガスを導入するバルブ、１１１はシャッター、
１１２は基板ホルダー、１１３は基板ホルダー１１２を
回転させるモーター、１１４は水晶モニターである。In sputtering, first, an inert gas (mainly Ar) is introduced into the vacuum chamber 101 evacuated to about 10 −4 Pa from the gas inlet 102 so that the pressure reaches about 0.1 Pa, and the cathode is attached to the target. A high voltage of DC or AC (several hundreds of V) is applied between 103 and the anode 104 facing it to cause glow discharge. Then, the inert gas positively ionized by the discharge enters the target on the cathode 103, sputters the target material, and forms a necessary thin film on the substrate 105. Further, FIG. 4 shows a conventional electron beam. It is a block diagram which shows the outline of the film-forming apparatus using the vapor deposition method. In the figure,
110 is a valve for introducing gas, 111 is a shutter,
Reference numeral 112 is a substrate holder, 113 is a motor for rotating the substrate holder 112, and 114 is a crystal monitor.
【０００４】電子ビーム蒸着は、電子銃からの電子ビー
ムを加速して試料表面に照射することにより、高融点金
属であるＭｏ，Ｔａ，Ｗをはじめ、石英，アルミナ，Ｉ
ＴＯ，ＺｎＯなどの酸化物を蒸着するのに用いられてい
る。蒸発源としては、電子ビーム発生用のフィラメント
（Ｗ），ビームを偏向させる磁気回路，蒸発材料を置く
水冷されたアノードからなる。また電子は、数ＫＶ（１
０〜２０ＫＷクラスの電源）で加速され、アノードにお
いた蒸発材料を加熱蒸発させる。In electron beam evaporation, an electron beam from an electron gun is accelerated to irradiate the surface of the sample, so that refractory metals such as Mo, Ta, and W, quartz, alumina, and I are deposited.
It is used to deposit oxides such as TO and ZnO. The evaporation source is composed of a filament (W) for generating an electron beam, a magnetic circuit for deflecting the beam, and a water-cooled anode on which evaporation material is placed. Also, the electrons are several KV (1
It is accelerated by a power source of 0 to 20 KW) to heat and evaporate the evaporation material placed on the anode.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記の
ような従来の薄膜作製方法（スパッタリング，電子ビー
ム蒸着法）で成膜した膜（例えばＩＴＯ膜）は、研磨し
た平滑なガラス等の基板に例えば２００ｎｍ程度の膜厚
の成膜を行った場合でも、膜表面に１０ｎｍ（スパッタ
リング膜）から数十ｎｍ（電子ビーム蒸着膜）の凹凸が
見られる。特に、基板温度が高温になると基板上に付い
た膜が結晶成長し、凹凸が助長される。また膜厚が厚く
なるに従い、初め多結晶もしくはアモルファス状態であ
ったものが、膜表面に針状，円錐状，ドーム状など種々
の形状が現われることもある。However, a film (for example, an ITO film) formed by the conventional thin film forming method (sputtering, electron beam evaporation method) as described above is formed on a polished smooth glass substrate or the like, for example. Even when a film having a thickness of about 200 nm is formed, unevenness of 10 nm (sputtering film) to several tens nm (electron beam evaporation film) is observed on the film surface. In particular, when the substrate temperature becomes high, the film attached to the substrate undergoes crystal growth and promotes unevenness. Further, as the film thickness increases, what is initially in a polycrystalline or amorphous state may appear on the film surface in various shapes such as a needle shape, a cone shape, and a dome shape.
【０００６】このような膜表面は、各種光学膜｛バンド
パスフィルタ，エッジフィルタ，反射鏡，反射防止膜等
（単層，多層含む）｝ではエッジのだれ，反射率の低
下，逆に透過率の低下につながる。またディスプレー
（液晶ディスプレー，プラズマディスプレー，エレクト
ロルミネッセンスディスプレー，有機ＥＬ，半導体等）
や電子部品（集積回路，抵抗チップ）などに用いた場
合、凸部への電界の集中や、更に上に成膜した膜の成膜
ムラ（特に膜厚が薄い場合下地が表面に露出する）が起
こり、電気的なリークや断線等が起こる。Such a film surface has various types of optical films (bandpass filters, edge filters, reflecting mirrors, antireflection films, etc. (including a single layer and a multi-layered film)), which have edge drooping, lower reflectance, and conversely transmittance. Leading to a decrease in Display (liquid crystal display, plasma display, electroluminescence display, organic EL, semiconductor, etc.)
When used for electronic parts (integrated circuits, resistive chips), etc., the electric field is concentrated on the convex parts and the unevenness of the film formed on it (especially when the film thickness is thin, the underlayer is exposed on the surface). Occurs, and electrical leakage or disconnection occurs.
【０００７】本発明は、上記のような問題点に着目して
なされたもので、表面が平滑な薄膜が得られ、各種光学
膜や機能膜として特性の優れたものが得られる薄膜作製
方法を提供することを目的としている。The present invention has been made by paying attention to the above problems, and provides a thin film production method capable of obtaining a thin film having a smooth surface and excellent properties as various optical films and functional films. It is intended to be provided.
【０００８】[0008]
【課題を解決するための手段】本発明の薄膜作製方法
は、アーク放電を用いたイオンプレーティング成膜法に
より、薄膜を付着させる基板の温度を２００℃以下にし
て該基板に成膜させるようにしたものである。According to the thin film forming method of the present invention, the temperature of a substrate to which a thin film is attached is set to 200 ° C. or lower by an ion plating film forming method using arc discharge to form a film on the substrate. It is the one.
【０００９】[0009]
【作用】本発明の薄膜作製方法においては、アーク放電
を用いたイオンプレーティング成膜法で、且つ基板温度
が２００℃以下で成膜が行われ、作製された膜の表面が
平滑になる。In the thin film forming method of the present invention, the film is formed by the ion plating film forming method using arc discharge and the substrate temperature is 200 ° C. or less, and the surface of the formed film becomes smooth.
【００１０】[0010]
【実施例】図１は本発明に係る薄膜作製方法を用いた成
膜装置（イオンプレーティング装置）の構成図である。
同図において、１は不活性ガスを導入するガス導入口、
２はカソード、３は環状永久磁石、４は空芯コイル、５
はカソード２に接続された放電用の高圧の直流電源、６
は真空容器、７は真空容器６内に設置されたハース（ア
ノード）で、冷却水により水冷されるようになってい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a block diagram of a film forming apparatus (ion plating apparatus) using the thin film forming method according to the present invention.
In the figure, 1 is a gas inlet for introducing an inert gas,
2 is a cathode, 3 is an annular permanent magnet, 4 is an air-core coil, 5
Is a high-voltage DC power supply for discharge connected to the cathode 2, 6
Is a vacuum container, and 7 is a hearth (anode) installed in the vacuum container 6, which is water-cooled by cooling water.
【００１１】８は永久磁石を用いた磁気回路で、ハース
７と一体的に設けられている。９は真空排気のための排
気口、１０は反応ガスの導入口、１２はハース７の上方
に配置された基板、１３はアーク放電によって生じた放
電プラズマ流、１４は収束用の補助空芯コイル、１５は
ハース７上に置かれた蒸発材料である。Reference numeral 8 denotes a magnetic circuit using a permanent magnet, which is provided integrally with the hearth 7. Reference numeral 9 is an exhaust port for vacuum exhaust, 10 is an inlet for reaction gas, 12 is a substrate arranged above the hearth 7, 13 is a discharge plasma flow generated by arc discharge, and 14 is an auxiliary air-core coil for focusing. , 15 are evaporation materials placed on the hearth 7.
【００１２】上記の装置は、真空容器６の中にアーク放
電用のカソード２と蒸発材料１５を載置したハース７と
がある距離と角度を持って配置された構成となってい
る。そして、蒸発材料１５を蒸発させる際には、先ず１
０-6Ｔｏｒｒ〜１０-7Ｔｏｒｒに排気した真空容器６内
にカソード２の後部のガス導入口１からＡｒ等の不活性
ガスを導入し、真空容器６を１０-4Ｔｏｒｒ〜１０-3Ｔ
ｏｒｒ台の圧力にした後、カソード２とハース７間に直
流電源５により高電圧を与えて放電させる。The apparatus described above is constructed such that the cathode 2 for arc discharge and the hearth 7 on which the evaporation material 15 is placed are arranged in the vacuum container 6 at a certain distance and angle. Then, when evaporating the evaporation material 15, first,
An inert gas such as Ar is introduced into the vacuum container 6 evacuated to 0 -6 Torr to 10 -7 Torr from the gas inlet 1 at the rear part of the cathode 2, and the vacuum container 6 is moved to 10 -4 Torr to 10 -3 T.
After adjusting the pressure to the level of the orr level, a high voltage is applied between the cathode 2 and the hearth 7 by the DC power supply 5 to discharge.
【００１３】この時、カソード２から出た放電プラズマ
流１３は、磁力線に沿って流れ、ハース７の内部の磁気
回路８のＮ極に向かって落ちる。そして、この放電プラ
ズマ流１３が落ちる位置に置かれた蒸発材料１５は、放
電プラズマ流１３が当たる数平方センチメートルの部分
が昇華、あるいは加熱溶融後に蒸発する。またハース７
上には、ある適当な距離を置いて上記蒸発した材料を付
着させる基板１２が配置されている。At this time, the discharge plasma flow 13 emitted from the cathode 2 flows along the lines of magnetic force and drops toward the N pole of the magnetic circuit 8 inside the hearth 7. Then, in the evaporation material 15 placed at the position where the discharge plasma flow 13 falls, the part of several square centimeters which the discharge plasma flow 13 hits is sublimated or evaporated after heating and melting. See again Hearth 7
A substrate 12 is placed on top of which the vaporized material is deposited at some suitable distance.
【００１４】ここで、実際の成膜に際しては、カソード
−アノード間で電流１３０Ａ、電圧５８Ｖのアーク放電
をさせ、アノード（ハース７）に置いた蒸発材料｛ＩＴ
Ｏ(Indium Tin Oxide)ペレット｝１５を蒸発させた。ま
た基板１２にはガラス基板を用いた。そして、その基板
温度を２５〜３００℃まで変え、表面の平滑性をＳＴＭ
(Scanning Tunnering Microscope) で測定した。図４に
その測定結果である基板温度と膜表面の粗さ（ｎｍ）の
関係を示す。Here, in the actual film formation, an arc discharge having a current of 130 A and a voltage of 58 V is performed between the cathode and the anode, and the evaporation material {IT is placed on the anode (hearth 7).
O (Indium Tin Oxide) pellets} 15 were evaporated. A glass substrate was used as the substrate 12. Then, the substrate temperature is changed to 25 to 300 ° C., and the surface smoothness is STM.
(Scanning Tunnering Microscope). FIG. 4 shows the relationship between the substrate temperature and the roughness (nm) of the film surface, which is the measurement result.
【００１５】図４から２００℃以下で特に平滑な表面が
見られることがわかる。同様に測定した従来のスパッタ
法の膜はＲａ（１μｍ×１μｍ面内の平均粗さ）：３．
７０４ｎｍ，Ｒｍａｘ（最高凸部，最低凹部）：２９．
６８１、また電子ビーム蒸着法の膜はＲａ：８．２６
２，Ｒｍａｘ：７７．４２５であり、これに比べて表面
の荒れは１／２から１／数十になり、アーク放電を使っ
たイオンプレーティング膜は平滑性において非常に優れ
ていることがわかる。It can be seen from FIG. 4 that a particularly smooth surface is seen at 200 ° C. or lower. Similarly, the film obtained by the conventional sputtering method has Ra (1 μm × 1 μm in-plane average roughness): 3.
704 nm, Rmax (highest convex portion, lowest concave portion): 29.
681, and the film of the electron beam evaporation method is Ra: 8.26.
2, Rmax: 77.425, compared to this, the surface roughness becomes 1/2 to 1 / several tens, and it can be seen that the ion plating film using arc discharge is very excellent in smoothness. .
【００１６】このように、アーク放電を使ったイオンプ
レーティング成膜法で、且つ基板温度を２００℃以下に
して作製した薄膜は、表面が平滑で特性が優れているた
め、例えば光学膜の一種であるバンドパスフィルタに使
用すれば、エッジがシャープな光学特性が得られ、各種
のミラー（アルミ鏡，他の金属，誘電体，セラミック材
料を使っても良い）に使えば、反射された像は乱れのな
い高品位な像が得られる。As described above, the thin film produced by the ion plating film formation method using arc discharge and the substrate temperature of 200 ° C. or less has a smooth surface and excellent characteristics. When used in a bandpass filter, the optical characteristics with sharp edges can be obtained, and when used in various mirrors (aluminum mirrors, other metals, dielectrics, ceramic materials may be used), the reflected image Gives a high-quality image without distortion.
【００１７】また、電子デバイス（例えば集積回路）に
使用すれば、従来のスパッタリング法では得られないシ
ャープなエッチングパターンが得られる。When used in an electronic device (for example, an integrated circuit), a sharp etching pattern which cannot be obtained by the conventional sputtering method can be obtained.
【００１８】また、液晶ディスプレーに使用される透明
電極（ＳＴＮ：Super Twisted Nematic 用）に使用すれ
ば、セルギャップが狭い液晶ディスプレーでもショート
や凸部への電界の集中がなく、欠陥の少ない高品位な画
像が得られる。更に、凹凸のある透明電極に比べ膜が緻
密になり、同じ膜厚でもより低抵抗な電極が得られる。Further, when it is used for a transparent electrode (for STN: Super Twisted Nematic) used in a liquid crystal display, there is no short circuit or concentration of an electric field on a convex portion even in a liquid crystal display having a narrow cell gap, and a high quality with few defects. Images can be obtained. Further, the film becomes denser than the transparent electrode having irregularities, and an electrode having lower resistance can be obtained even with the same film thickness.
【００１９】[0019]
【発明の効果】以上のように、本発明によれば、アーク
放電を用いたイオンプレーティング成膜法で、且つ基板
温度を２００℃以下で成膜するようにしたので、表面が
平滑な薄膜が得られ、各種光学膜や機能膜として特性の
優れたものが得られるという効果がある。As described above, according to the present invention, since the film is formed by the ion plating film forming method using arc discharge and the substrate temperature is 200 ° C. or less, a thin film having a smooth surface is obtained. Is obtained, and various optical films and functional films having excellent characteristics can be obtained.
【図１】 本発明の一実施例を示す構成図FIG. 1 is a configuration diagram showing an embodiment of the present invention.
【図２】 一実施例の基板温度と表面の粗さの関係を示
す図FIG. 2 is a diagram showing the relationship between the substrate temperature and the surface roughness of one example.
【図３】 従来例を示す構成図FIG. 3 is a configuration diagram showing a conventional example.
【図４】 他の従来例を示す構成図FIG. 4 is a configuration diagram showing another conventional example.
２ カソード ５ 直流電源 ６ 真空容器 ７ ハース（アノード） ８ 磁気回路 １２ 基板 １３ 放電プラズマ流 １５ 蒸発材料 2 cathode 5 DC power supply 6 vacuum container 7 hearth (anode) 8 magnetic circuit 12 substrate 13 discharge plasma flow 15 evaporation material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 新野 史 茨城県つくば市天久保２−11−１ コーポ りぶる203号 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Fumi Shinno 2-1-1, Amakubo, Tsukuba City, Ibaraki Prefecture Corp. Rubiru No. 203
Claims (1)
グ成膜法により、薄膜を付着させる基板の温度を２００
℃以下にして該基板に成膜させることを特徴とする薄膜
作製方法。1. The temperature of a substrate on which a thin film is deposited is set to 200 by an ion plating film forming method using arc discharge.
A method for producing a thin film, which comprises forming the film on the substrate at a temperature of not higher than ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13313794A JPH083735A (en) | 1994-06-15 | 1994-06-15 | Production of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13313794A JPH083735A (en) | 1994-06-15 | 1994-06-15 | Production of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH083735A true JPH083735A (en) | 1996-01-09 |
Family
ID=15097635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13313794A Pending JPH083735A (en) | 1994-06-15 | 1994-06-15 | Production of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH083735A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100356565B1 (en) * | 1997-01-14 | 2002-12-18 | 스미도모쥬기가이고교 가부시키가이샤 | Thin film growth method and apparatus for forming magnesium oxide thin film at increased thin film growth rate |
| DE19950852B4 (en) * | 1998-10-22 | 2005-03-24 | Stanley Electric Co. Ltd. | Method and apparatus for producing a thin layer of low resistance |
| USRE41747E1 (en) | 2001-01-25 | 2010-09-21 | Kyocera Optec Co., Ltd. | Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film |
| CN115491642A (en) * | 2022-09-23 | 2022-12-20 | 研博智创任丘科技有限公司 | Electric arc evaporation coating device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02240250A (en) * | 1989-03-14 | 1990-09-25 | Asahi Glass Co Ltd | Conductive color filter substrate and coating method |
-
1994
- 1994-06-15 JP JP13313794A patent/JPH083735A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02240250A (en) * | 1989-03-14 | 1990-09-25 | Asahi Glass Co Ltd | Conductive color filter substrate and coating method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100356565B1 (en) * | 1997-01-14 | 2002-12-18 | 스미도모쥬기가이고교 가부시키가이샤 | Thin film growth method and apparatus for forming magnesium oxide thin film at increased thin film growth rate |
| DE19950852B4 (en) * | 1998-10-22 | 2005-03-24 | Stanley Electric Co. Ltd. | Method and apparatus for producing a thin layer of low resistance |
| USRE41747E1 (en) | 2001-01-25 | 2010-09-21 | Kyocera Optec Co., Ltd. | Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film |
| CN115491642A (en) * | 2022-09-23 | 2022-12-20 | 研博智创任丘科技有限公司 | Electric arc evaporation coating device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7678241B2 (en) | Film forming apparatus, substrate for forming oxide thin film and production method thereof | |
| US8821697B2 (en) | Silver selenide sputtered films and method and apparatus for controlling defect formation in silver selenide sputtered films | |
| KR20050092712A (en) | Transparent conductive film and film forming method therefor | |
| JP2003520296A (en) | Electron beam evaporation method of transparent indium tin oxide | |
| JP4240471B2 (en) | Method for forming transparent conductive film | |
| US3492215A (en) | Sputtering of material simultaneously evaporated onto the target | |
| JPH083735A (en) | Production of thin film | |
| JP2946402B2 (en) | Plasma processing method and plasma processing apparatus | |
| JPH03240944A (en) | Method and device for focusing target sputtering for forming thin aluminum film | |
| JPH10330937A (en) | Formation of substantially flat coating | |
| EP1184484B1 (en) | METHOD FOR FABRICATING MgO POLYCRYSTALLINE THIN FILM | |
| JP2002047559A (en) | Ito film, and film deposition method thereof | |
| JP3546019B2 (en) | Film forming method and apparatus | |
| JP2001140066A (en) | Thin film deposition method and deposition system | |
| Felmetsger et al. | Dual cathode DC–RF and MF–RF coupled S-Guns for reactive sputtering | |
| JP4351777B2 (en) | Deposition assist deposition apparatus and thin film forming method | |
| JPH0827566A (en) | Production of observation window of vacuum device | |
| JPH0273963A (en) | Formation of thin film on low-temperature substrate | |
| JPH09194232A (en) | Substrate formed with ito film and formation of ito film | |
| JPS63458A (en) | Vacuum arc vapor deposition device | |
| JPH11172416A (en) | Vacuum vapor deposition and formation of ito film using the same | |
| JPH02240250A (en) | Conductive color filter substrate and coating method | |
| JP2657206B2 (en) | Method for forming transparent conductive film | |
| JPH093628A (en) | Transparent conductive film and its production | |
| JP2687845B2 (en) | Method for producing composite material thin film using pulsed laser deposition method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980106 |