JPH08327698A - Method and system for simulating circuit - Google Patents
Method and system for simulating circuitInfo
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- JPH08327698A JPH08327698A JP7133119A JP13311995A JPH08327698A JP H08327698 A JPH08327698 A JP H08327698A JP 7133119 A JP7133119 A JP 7133119A JP 13311995 A JP13311995 A JP 13311995A JP H08327698 A JPH08327698 A JP H08327698A
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- circuit
- current
- temperature
- voltage
- circuit element
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路の回路
設計において用いられる回路シミュレーション方法及び
その装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit simulation method and apparatus used in circuit design of a semiconductor integrated circuit.
【０００２】[0002]
【従来の技術】半導体集積回路の回路設計において用い
られる回路シミュレータでは、ＳＰＩＣＥが広く利用さ
れている。ＳＰＩＣＥを含め、回路素子の自己発熱を考
慮した一般的な回路シミュレータは存在せず、ごく一部
の回路シミュレータにおいて、次のような方法が用いら
れているに過ぎない。すなわち、例えばバイポーラトラ
ンジスタモデルにおいて、温度Ｔでのコレクタ・エミッ
タ間の電流Ｉce及び電圧Ｖceを求め、電流Ｉceを電流Ｉ
ce’＝Ｉce／｛１＋(Ｉce・Ｖce／Ｐ0)｝と修正してト
ランジスタの自己発熱を部分的に考慮した表現としてい
る。ここに、Ｐ0は定数である。2. Description of the Related Art SPICE is widely used in circuit simulators used in the circuit design of semiconductor integrated circuits. There is no general circuit simulator that considers self-heating of circuit elements including SPICE, and the following method is only used in a small part of circuit simulators. That is, for example, in a bipolar transistor model, the current Ice and the voltage Vce between the collector and the emitter at the temperature T are obtained, and the current Ice is calculated as the current I.
The expression is modified by ce '= Ice / {1+ (Ice.Vce / P0)} to partially consider the self-heating of the transistor. Here, P0 is a constant.
【０００３】[0003]
【発明が解決しようとする課題】しかし、自己発熱によ
り温度が変化すると電流が変化し、電流が変化すると温
度が変化するので、上記方法で得られる結果は正確さに
欠け、また、必ずしも上記式で自己発熱による特性変化
の傾向を表現できるとは限らない。発明の目的は、この
ような問題点に鑑み、回路素子の自己発熱を考慮してよ
り正確に回路特性を求めることができる回路シミュレー
ション方法及びその装置を提供することにある。However, since the current changes when the temperature changes due to self-heating and the temperature changes when the current changes, the result obtained by the above method is inaccurate, and the above formula is not always required. Does not always express the tendency of characteristic change due to self-heating. In view of such a problem, an object of the present invention is to provide a circuit simulation method and an apparatus thereof that can more accurately obtain circuit characteristics in consideration of self-heating of circuit elements.
【０００４】[0004]
【課題を解決するための手段及びその作用効果】第１発
明では、複数の回路素子が接続された回路のシュミレー
ション方法において、各回路素子の自己発熱を考慮しな
い場合の電流及び電圧を、回路方程式、回路の入力条件
及び温度Ｔに基づいて算出する第１ステップと、回路の
消費電力により変化する各回路素子の電流を求め（変化
の傾向を予測して求め）、各回路素子の電流変化による
回路の消費電力の変化から温度変化ΔＴを求め、Ｔ＋Δ
Ｔを新たな温度Ｔとする第２ステップと、を交互に、回
路の状態が収束するまで繰り返し実行することにより、
回路素子の発熱を考慮した電圧又は電流を求める。According to the first aspect of the present invention, in the simulation method of a circuit in which a plurality of circuit elements are connected, current and voltage in the case where self-heating of each circuit element is not taken into consideration , The first step of calculating based on the input condition of the circuit and the temperature T, and the current of each circuit element that changes depending on the power consumption of the circuit is obtained (obtained by predicting the tendency of change) Temperature change ΔT is calculated from the change in circuit power consumption, and T + Δ
By alternately executing the second step in which T is a new temperature T and until the state of the circuit converges,
Determine the voltage or current that takes into account the heat generated by the circuit elements.
【０００５】第２発明では、複数の回路素子が接続され
た回路のシュミレーション方法において、各回路素子の
自己発熱を考慮しない場合の電流及び電圧を、回路方程
式、回路の入力条件及び温度Ｔに基づいて算出する第１
ステップと、回路の消費電力により変化する各回路素子
の電流を温度Ｔ＋ΔＴでの電流として求め（変化の傾向
を予測して求め）、各回路素子の電流変化による回路の
消費電力の変化から温度変化ΔＴを求める第２ステップ
と、温度Ｔ＋ΔＴでの各回路素子の電圧を求める第３ス
テップと、を有し、第１ステップを実行した後、回路の
状態が収束するまで該第２ステップと該第３ステップと
を交互に繰り返し実行することにより、回路素子の発熱
を考慮した電圧又は電流を求める。According to the second aspect of the present invention, in a circuit simulation method in which a plurality of circuit elements are connected, the current and voltage when self-heating of each circuit element is not taken into consideration are based on the circuit equation, the input condition of the circuit and the temperature T. First calculated
The step and the current of each circuit element that changes depending on the power consumption of the circuit are obtained as the current at the temperature T + ΔT (obtained by predicting the change tendency), and the temperature change from the change in the power consumption of the circuit due to the current change of each circuit element. It has a second step of obtaining ΔT and a third step of obtaining the voltage of each circuit element at the temperature T + ΔT, and after performing the first step, the second step and the second step are performed until the state of the circuit converges. The voltage or current in consideration of heat generation of the circuit element is obtained by alternately repeating the three steps.
【０００６】上記第１又は第２の発明によれば、回路の
消費電力による温度変化と、温度変化による回路の特性
変化との相互依存を、回路の状態が収束するまで繰り返
し考慮しているので、回路素子の自己発熱を考慮した、
より正確な回路特性を求めることができる。これは、半
導体集積回路の開発期間短縮化に寄与する。第１発明に
よれば、第２ステップの後の第１ステップで各回路素子
の電流を回路方程式に基づいて求め直すので、第２発明
による場合よりも正確に回路特性を求めることができ
る。第２発明によれば、第３ステップでこの求め直しを
しないので、第１発明による場合よりも高速処理が可能
となる。According to the first or second aspect of the invention, the mutual dependence between the temperature change due to the power consumption of the circuit and the characteristic change of the circuit due to the temperature change is repeatedly considered until the state of the circuit converges. , Considering self-heating of circuit element,
More accurate circuit characteristics can be obtained. This contributes to shortening the development period of the semiconductor integrated circuit. According to the first aspect of the invention, the current of each circuit element is recalculated based on the circuit equation in the first step after the second step, so that the circuit characteristics can be determined more accurately than in the case of the second aspect. According to the second aspect of the invention, this recalculation is not performed in the third step, so high speed processing is possible as compared with the case of the first aspect of the invention.
【０００７】第１又は第２の発明の第１態様では、上記
複数の回路素子を第１〜ｎ回路素子とし、ｉ＝１〜ｎの
各々について、温度Ｔでの第ｉ回路素子に流れる電流を
Ｉ(i,k)とし、第ｉ回路素子の端子間電圧をＶ(i,k)と
し、回路の消費電力により変化した第ｉ回路素子の電流
をＩ(i,k+1)としたとき、上記第２ステップは、実質的
に、 Ａ1〜Ａm、N1〜Nm、m、s及びＫはパラメータ により電流Ｉ(i,k+1)及び温度変化ΔＴを求める。In the first aspect of the first or second invention, the plurality of circuit elements are the first to nth circuit elements, and the current flowing in the ith circuit element at the temperature T for each of i = 1 to n. Is I (i, k), the terminal voltage of the i-th circuit element is V (i, k), and the current of the i-th circuit element changed by the power consumption of the circuit is I (i, k + 1). Then, the second step is substantially For A1 to Am, N1 to Nm, m, s and K, the current I (i, k + 1) and the temperature change ΔT are obtained by the parameters.
【０００８】この第１態様によれば、パラメータＡ1〜
Ａm、N1〜Nm、m、sを実験結果に基づいて定めることに
より、様々な温度／電流特性の回路に本発明を適用する
ことが可能となる。第１又は第２の発明の第２態様で
は、上記収束を、 この第２態様によれば、温度又は電圧で収束判定した場
合よりも正確に判定することができる。According to this first aspect, the parameters A1 ...
By setting Am, N1 to Nm, m, and s based on the experimental results, the present invention can be applied to circuits having various temperature / current characteristics. In the second aspect of the first or second invention, the above convergence is According to the second aspect, it is possible to make a more accurate determination than when the convergence determination is made by the temperature or the voltage.
【０００９】第１又は第２の発明の第３態様では、上記
パラメータは、Ａ1＝１、N1＝０、m＝２である。この第
３態様によれば、Ｉ(i,k+1)を求める式が簡単になり、
かつ、経験的に多くの温度／電流特性の回路に本発明を
適用することができる。第３発明の回路シミュレータで
は、上記いずれかの回路シミュレーション方法を実行す
る計算機を有する。In the third aspect of the first or second invention, the parameters are A1 = 1, N1 = 0 and m = 2. According to the third aspect, the formula for obtaining I (i, k + 1) is simplified,
In addition, the present invention can be applied empirically to circuits having many temperature / current characteristics. A circuit simulator according to a third aspect of the present invention has a computer that executes any one of the above circuit simulation methods.
【００１０】[0010]
【実施例】以下、図面に基づいて本発明の一実施例を説
明する。回路シミュレータのハードウエア構成は、一般
的な計算器システムであり、その説明を省略する。図２
は、ヘテロ接合バイポーラトランジスタ(ＨＢＴ)モデル
の回路図を示す。ＨＢＴモデル１０は、抵抗１〜３、ダ
イオード４、５及び直流電流源６を図示のように接続し
たモデルで表される。１１〜１５は節点であり、１１は
エミッタ電極、１２はベース電極、１３はコレクタ電極
である。図２では、第ｉ回路素子、ｉ＝１〜６に流れる
電流をＩi、第ｉ回路素子の端子間電圧をＶiと表してい
る。正確には、ダイオード４及び５にそれぞれ並列に、
特性の異なる他のダイオードを接続したモデルを用いる
が、図２ではこのダイオードを省略して簡単化してい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. The hardware configuration of the circuit simulator is a general computer system, and its explanation is omitted. Figure 2
Shows a circuit diagram of a heterojunction bipolar transistor (HBT) model. The HBT model 10 is represented by a model in which resistors 1 to 3, diodes 4, 5 and a direct current source 6 are connected as shown. Reference numerals 11 to 15 are nodes, 11 is an emitter electrode, 12 is a base electrode, and 13 is a collector electrode. In FIG. 2, the current flowing in the i-th circuit element, i = 1 to 6, is represented by Ii, and the terminal voltage of the i-th circuit element is represented by Vi. To be precise, in parallel with the diodes 4 and 5,
Although a model in which other diodes having different characteristics are connected is used, this diode is omitted in FIG. 2 for simplification.
【００１１】ＨＢＴモデル１０の回路方程式は、各回路
素子の、温度を含む電圧／電流特性方程式と、回路素子
の接続関係とにより定まる。例えば絶対温度Ｔでのダイ
オードの電圧Ｖ及び電流Ｉの特性方程式は周知のよう
に、Ｉ＝Ｉs｛exp(qＶ／kＴ)−１｝と表される。図１
は、各回路素子の自己発熱を考慮した回路シミュレーシ
ョン方法を示すフローチャートである。回路は、第１〜
ｎ回路素子で構成されているとする。以下、括弧内の数
値は図中のステップ識別番号を表す。The circuit equation of the HBT model 10 is determined by the voltage / current characteristic equation including temperature of each circuit element and the connection relation of the circuit elements. For example, as is well known, the characteristic equation of the voltage V and the current I of the diode at the absolute temperature T is expressed as I = Is {exp (qV / kT) -1}. FIG.
FIG. 6 is a flowchart showing a circuit simulation method considering self-heating of each circuit element. The circuit is 1st
It is assumed to be composed of n circuit elements. Hereinafter, the numerical value in the parenthesis represents the step identification number in the figure.
【００１２】（２０）回路に対し入力条件を与える。例
えば図２のＨＢＴモデル１０において、節点１３に対す
る節点１１及び１２の電圧を与える。また、チップ上の
着目している回路での温度Ｔを、各回路素子の自己発熱
を考慮しない場合の温度Ｔ0とする。繰り返し回数ｋを
１とする。 （２１）温度Ｔkでの回路の、枝ｉの電流Ｉ(i,k)及び枝
ｉの端子間電圧Ｖ(i,k)を、回路方程式、上記入力条件
及び温度Ｔkに基づいて算出する。(20) An input condition is given to the circuit. For example, in the HBT model 10 of FIG. 2, the voltages of the nodes 11 and 12 are given with respect to the node 13. Further, the temperature T of the circuit of interest on the chip is taken as the temperature T0 when the self-heating of each circuit element is not taken into consideration. The number of repetitions k is 1. (21) The current I (i, k) of the branch i and the inter-terminal voltage V (i, k) of the branch i of the circuit at the temperature Tk are calculated based on the circuit equation, the input condition, and the temperature Tk.
【００１３】（２２）この電流Ｉ(i,k)及び電圧Ｖ(i,k)
によりＨＢＴモデル１０で消費する電力Ｐ１を、 （２３）Ｐ１により、電流Ｉ(i,k)が Ｉ(i,k+1)＝Ｉ(i,k)／（１＋ＱＰ１）s になるとする。ここにｓは、任意に定め得るパラメータ
である。(22) This current I (i, k) and voltage V (i, k)
The power P1 consumed by the HBT model 10 is (23) It is assumed that the current I (i, k) becomes I (i, k + 1) = I (i, k) / (1 + QP1) s due to P1. Here, s is a parameter that can be arbitrarily determined.
【００１４】（２４）電流Ｉによる電力Ｐ２を （２５）Ｐ１からＰ２に変化したことによる温度変化Δ
Ｔを、 ΔＴ＝Ｋ（Ｐ２−Ｐ１） として求める。ここにＫは、任意に定め得るパラメータ
である。温度Ｔ＋ΔＴを新たなＴとする。(24) The power P2 due to the current I (25) Temperature change Δ due to change from P1 to P2
T is determined as ΔT = K (P2-P1). Here, K is a parameter that can be arbitrarily determined. Let temperature T + ΔT be a new T.
【００１５】（２６）回路方程式、入力条件及び温度Ｔ
に基づいて電圧Ｖを算出する。電圧Ｖを算出するのに、
電流ＩがΔＩ変化した時の電圧Ｖの変化ΔＶを求める近
似方程式を用い、電圧Ｖ＋ΔＶを電圧Ｖと更新してもよ
い。 （２７）収束判定のために、 (26) Circuit equation, input condition and temperature T
The voltage V is calculated based on To calculate the voltage V,
The voltage V + ΔV may be updated to the voltage V by using an approximate equation for obtaining the change ΔV of the voltage V when the current I changes by ΔI. (27) For convergence judgment,
【００１６】 （２８、２９）Ｅ≧εであればｋをインクリメントして
上記ステップ２２へ戻り、Ｅ＜εであれば処理を終了す
る。ここに、εは充分小さな正の定数である。ステップ
２３のｓ及びステップ２５のＫの値は実験的に定められ
る。ＨＢＴモデル１０からの熱の流出及びＨＢＴモデル
１０の周囲からＨＢＴモデル１０への熱の流入を考慮す
る場合には、パラメータｓ及びＫを時間の関数で表す。[0016] (28, 29) If E ≧ ε, k is incremented and the process returns to step 22. If E <ε, the process ends. Here, ε is a sufficiently small positive constant. The values of s in step 23 and K in step 25 are determined experimentally. When considering the outflow of heat from the HBT model 10 and the inflow of heat from the periphery of the HBT model 10 to the HBT model 10, the parameters s and K are expressed as a function of time.
【００１７】本実施例では、回路の消費電力を電流変化
に関連付け、電流変化による回路の消費電力の変化を温
度変化に関連付け、電流ベクトル｛Ｉ(1,k)，Ｉ(2,k)，
Ｉ(3,k)，・・・，Ｉ(n,k)｝が収束するまで繰り返し処
理を実行しているので、従来よりも正確に回路特性を求
めることができ、これにより半導体集積回路の開発期間
短縮化を図ることができる。In the present embodiment, the circuit power consumption is associated with the current change, the circuit power consumption change due to the current change is associated with the temperature change, and the current vectors {I (1, k), I (2, k),
Since I (3, k), ..., I (n, k)} is repeatedly processed until it converges, the circuit characteristics can be obtained more accurately than before, and thus the semiconductor integrated circuit The development period can be shortened.
【００１８】図３は、AlGaAs/GaAs ＨＢＴのコレクタ・
エミッタ間電圧／電流特性の実測値（実線）及びシミュ
レーション結果（点線）を示す線図であり、（Ａ）は本
実施例を示し、（Ｂ）は従来例を示す。図３（Ａ）は、
コレクタ電圧Ｖ6に対するコレクタ電流Ｉ6を示し、図３
（Ｂ）は、コレクタ電圧Ｖ1＋Ｖ4＋Ｖ6に対するコレク
タ電流Ｉ1を示す。図３（Ａ）と（Ｂ）との比較から明
らかなように、本実施例によれば、特に飽和領域におい
て正確になることがわかる。FIG. 3 shows an AlGaAs / GaAs HBT collector.
It is a diagram showing an actually measured value (solid line) of the emitter-emitter voltage / current characteristic and a simulation result (dotted line), where (A) shows this embodiment and (B) shows a conventional example. FIG. 3 (A) shows
FIG. 3 shows the collector current I6 with respect to the collector voltage V6.
(B) shows the collector current I1 with respect to the collector voltage V1 + V4 + V6. As is clear from the comparison between FIGS. 3A and 3B, it is understood that the present embodiment is accurate especially in the saturation region.
【００１９】本実施例では特に、上記ステップ２６で電
流Ｉ(i,k+1)を求める必要はないので、高速処理が可能
となる。なお、ステップ２６において、ステップ２１と
同様に電流も算出する構成であってもよい。この場合、
電圧及び電流をより正確に求めることができる。In the present embodiment, in particular, since it is not necessary to obtain the current I (i, k + 1) in step 26, high speed processing is possible. The current may be calculated in step 26 as in step 21. in this case,
The voltage and current can be obtained more accurately.
【００２０】[0020]
【図１】自己発熱を考慮した回路シミュレーション方法
を示すフローチャートである。FIG. 1 is a flowchart showing a circuit simulation method considering self-heating.
【図２】ＨＢＴモデルの回路図である。FIG. 2 is a circuit diagram of an HBT model.
【図３】ＨＢＴのコレクタ・エミッタ間電圧／電流特性
の実測値及びシミュレーション結果を示す線図であり、
（Ａ）は本実施例を示し、（Ｂ）は従来例を示す。FIG. 3 is a diagram showing measured values and simulation results of collector-emitter voltage / current characteristics of an HBT,
(A) shows a present Example, (B) shows a prior art example.
１〜３ 抵抗 ４、５ ダイオード ６ 直流電流源 １０ ＨＢＴモデル 1-3 resistance 4, 5 diode 6 direct current source 10 HBT model
Claims (6)
ミレーション方法において、 各回路素子の自己発熱を考慮しない場合の電流及び電圧
を、回路方程式、回路の入力条件及び温度Ｔに基づいて
算出する第１ステップと、 回路の消費電力により変化する各回路素子の電流を求
め、各回路素子の電流変化による回路の消費電力の変化
から温度変化ΔＴを求め、Ｔ＋ΔＴを新たな温度Ｔとす
る第２ステップと、 を交互に、回路の状態が収束するまで繰り返し実行する
ことにより、回路素子の発熱を考慮した電圧又は電流を
求めることを特徴とする回路シミュレーション方法。1. In a simulation method of a circuit in which a plurality of circuit elements are connected, a current and a voltage when self-heating of each circuit element is not considered are calculated based on a circuit equation, an input condition of the circuit, and a temperature T. In the first step, the current of each circuit element that changes depending on the power consumption of the circuit is obtained, the temperature change ΔT is obtained from the change of the power consumption of the circuit due to the current change of each circuit element, and T + ΔT is set as the new temperature T. A circuit simulation method characterized in that a voltage or a current in which heat generation of a circuit element is taken into consideration is repeatedly performed by alternately performing the steps and until the circuit state converges.
ミレーション方法において、 各回路素子の自己発熱を考慮しない場合の電流及び電圧
を、回路方程式、回路の入力条件及び温度Ｔに基づいて
算出する第１ステップと、 回路の消費電力により変化する各回路素子の電流を温度
Ｔ＋ΔＴでの電流として求め、各回路素子の電流変化に
よる回路の消費電力の変化から温度変化ΔＴを求める第
２ステップと、 温度Ｔ＋ΔＴでの各回路素子の電圧を求める第３ステッ
プと、 を有し、第１ステップを実行した後、回路の状態が収束
するまで該第２ステップと該第３ステップとを交互に繰
り返し実行することにより、回路素子の発熱を考慮した
電圧又は電流を求めることを特徴とする回路シミュレー
ション方法。2. In a simulation method of a circuit in which a plurality of circuit elements are connected, a current and a voltage when self-heating of each circuit element is not considered are calculated based on a circuit equation, an input condition of the circuit, and a temperature T. A first step, and a second step in which the current of each circuit element that changes depending on the power consumption of the circuit is obtained as a current at temperature T + ΔT, and the temperature change ΔT is obtained from the change in the power consumption of the circuit due to the current change of each circuit element, A third step of obtaining the voltage of each circuit element at the temperature T + ΔT, and, after executing the first step, repeatedly executing the second step and the third step alternately until the circuit state converges. By doing so, the circuit simulation method is characterized in that the voltage or current in which heat generation of the circuit element is taken into consideration is obtained.
とし、 ｉ＝１〜ｎの各々について、温度Ｔでの第ｉ回路素子に
流れる電流をＩ(i,k)とし、第ｉ回路素子の端子間電圧
をＶ(i,k)とし、回路の消費電力により変化した第ｉ回
路素子の電流をＩ(i,k+1)としたとき、前記第２ステッ
プは、実質的に、 Ａ1〜Ａm、N1〜Nm、m、s及びＫはパラメータ により電流Ｉ(i,k+1)及び温度変化ΔＴを求めることを
特徴とする請求項１又は２記載の回路シミュレーション
方法。3. The plurality of circuit elements are first to nth circuit elements, and for each of i = 1 to n, a current flowing through the ith circuit element at a temperature T is I (i, k), and When the voltage between terminals of the circuit element is V (i, k) and the current of the i-th circuit element changed by the power consumption of the circuit is I (i, k + 1), the second step is substantially , 3. The circuit simulation method according to claim 1, wherein A1 to Am, N1 to Nm, m, s, and K obtain the current I (i, k + 1) and temperature change ΔT by parameters.
ミュレーション方法。4. The convergence of The circuit simulation method according to any one of claims 1 to 3, which is a characteristic.
＝２であることを特徴とする請求項１乃至４のいずれか
１つに記載の回路シミュレーション方法。5. The parameters are A1 = 1, N1 = 0, m
= 2, The circuit simulation method according to any one of claims 1 to 4.
回路シミュレーション方法を実行する計算機を有するこ
とを特徴とする回路シミュレータ。6. A circuit simulator comprising a computer that executes the circuit simulation method according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7133119A JPH08327698A (en) | 1995-05-31 | 1995-05-31 | Method and system for simulating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7133119A JPH08327698A (en) | 1995-05-31 | 1995-05-31 | Method and system for simulating circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08327698A true JPH08327698A (en) | 1996-12-13 |
Family
ID=15097241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7133119A Withdrawn JPH08327698A (en) | 1995-05-31 | 1995-05-31 | Method and system for simulating circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08327698A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008075611A1 (en) * | 2006-12-19 | 2008-06-26 | Nec Corporation | Circuit simulator, circuit simulation method and program |
| JP2008176450A (en) * | 2007-01-17 | 2008-07-31 | Matsushita Electric Ind Co Ltd | Timing verification method for semiconductor integrated circuit |
| JP2012032849A (en) * | 2010-07-28 | 2012-02-16 | Fuji Electric Co Ltd | Simulation method and apparatus for semiconductor device |
| WO2012046344A1 (en) * | 2010-10-08 | 2012-04-12 | 富士通株式会社 | Program, library creating device, and power consumption calculating device |
| KR20160021960A (en) * | 2014-08-18 | 2016-02-29 | 삼성전자주식회사 | Simulation system estimating self-heating characteristic of circuit and design method thereof |
-
1995
- 1995-05-31 JP JP7133119A patent/JPH08327698A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008075611A1 (en) * | 2006-12-19 | 2008-06-26 | Nec Corporation | Circuit simulator, circuit simulation method and program |
| JPWO2008075611A1 (en) * | 2006-12-19 | 2010-04-08 | 日本電気株式会社 | Circuit simulator, circuit simulation method and program |
| JP5029615B2 (en) * | 2006-12-19 | 2012-09-19 | 日本電気株式会社 | Circuit simulator |
| US8332190B2 (en) | 2006-12-19 | 2012-12-11 | Nec Corporation | Circuit simulator, circuit simulation method and program |
| JP2008176450A (en) * | 2007-01-17 | 2008-07-31 | Matsushita Electric Ind Co Ltd | Timing verification method for semiconductor integrated circuit |
| JP2012032849A (en) * | 2010-07-28 | 2012-02-16 | Fuji Electric Co Ltd | Simulation method and apparatus for semiconductor device |
| WO2012046344A1 (en) * | 2010-10-08 | 2012-04-12 | 富士通株式会社 | Program, library creating device, and power consumption calculating device |
| JPWO2012046344A1 (en) * | 2010-10-08 | 2014-02-24 | 富士通株式会社 | Program, library creation device, and power consumption calculation device |
| KR20160021960A (en) * | 2014-08-18 | 2016-02-29 | 삼성전자주식회사 | Simulation system estimating self-heating characteristic of circuit and design method thereof |
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