JPH08316371A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH08316371A JPH08316371A JP7120943A JP12094395A JPH08316371A JP H08316371 A JPH08316371 A JP H08316371A JP 7120943 A JP7120943 A JP 7120943A JP 12094395 A JP12094395 A JP 12094395A JP H08316371 A JPH08316371 A JP H08316371A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead
- island
- semiconductor device
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は樹脂封止型半導体装置に
関し、特にリードの寸法出しや形状出しに要する時間を
短縮できる樹脂封止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device capable of shortening the time required for dimensioning and shaping the leads.
【０００２】[0002]
【従来の技術】回路基板への実装密度を上げるために、
表面実装型の樹脂封止型半導体装置が多く使用されるよ
うになってきた。従来の表面実装型の樹脂封止型半導体
装置は、図７に示すように、半導体素子２１が搭載され
たアイランド２２と、アイランド２２を取囲むよう配置
された複数のリード２３と、半導体素子２１とリード２
３の内端部を電気的に接続するワイヤ２４と、半導体素
子２１を搭載したアイランド２２とリード２３の一部と
を覆う樹脂封止部２５とから構成されており、リード２
３が樹脂封止部２５から導出している。2. Description of the Related Art In order to increase the mounting density on a circuit board,
Surface mount type resin-encapsulated semiconductor devices have come into wide use. As shown in FIG. 7, a conventional surface mount type resin-sealed semiconductor device includes an island 22 on which a semiconductor element 21 is mounted, a plurality of leads 23 arranged so as to surround the island 22, and a semiconductor element 21. And lead 2
3 is composed of a wire 24 for electrically connecting the inner end portion of 3 and a resin sealing portion 25 that covers the island 22 on which the semiconductor element 21 is mounted and a part of the lead 23.
3 is led out from the resin sealing portion 25.
【０００３】そして、回路基板との表面実装を実現する
ため、樹脂封止部２５の中央付近からから導出している
リード２３を樹脂封止部２５の下面と同じ高さとなるよ
うに曲げ加工を施している。Then, in order to realize surface mounting on the circuit board, the lead 23 extending from the vicinity of the center of the resin sealing portion 25 is bent so that it has the same height as the lower surface of the resin sealing portion 25. I am giving it.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上述の表面
実装型の樹脂封止型半導体装置では、アイランド２２及
びリード２３が形成された平板状のリードフレームを使
用し、樹脂封止が行われた後に樹脂封止部２５から導出
したリード２３を曲げ加工しているため、リード２３の
寸法、即ちリード下面からの高さＨや樹脂封止部からの
距離Ｗにバラツキが生じ、リード２３が所定形状に形成
されない場合があった。By the way, in the above-mentioned surface mount type resin-sealed type semiconductor device, resin-sealing is performed using a flat lead frame having the islands 22 and the leads 23 formed therein. Since the lead 23 led out from the resin encapsulation portion 25 is bent later, the dimension of the lead 23, that is, the height H from the lower surface of the lead and the distance W from the resin encapsulation portion are varied, and the lead 23 is predetermined. In some cases, it was not formed into a shape.
【０００５】また、樹脂封止後にリード２３を加工する
ため、樹脂封止部２５にクラックが生じたり、検査工程
や製品の搬送中にリード２３が変形し実装不良が生じる
おそれもあった。本発明は、上述した問題点に鑑み、特
にリードの寸法や形状出しに要する時間を短縮できる樹
脂封止型半導体装置を提供するものである。Further, since the lead 23 is processed after the resin sealing, the resin sealing portion 25 may be cracked, or the lead 23 may be deformed during the inspection process or during the transportation of the product to cause mounting failure. In view of the above-mentioned problems, the present invention provides a resin-encapsulated semiconductor device that can shorten the time required for forming the lead size and shape.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記の目的を
達成するために次のような構成をとる。すなわち、本発
明の表面実装型の樹脂封止型半導体装置は、半導体素子
を搭載したアイランドと、前記アイランドの周囲に配置
されたリードと、前記半導体素子とリードの内端部を電
気的に接続するワイヤと、前記アイランド及びリードの
一部を覆う樹脂封止部を有する表面実装型の樹脂封止型
半導体装置において、前記リードは内端部がアイランド
と共に樹脂封止部の下面より上方に位置すると共に、前
記樹脂封止部から導出されるリードは樹脂封止部の下面
から導出されていることを特徴とするものである。The present invention has the following constitution in order to achieve the above object. That is, the surface-mounting resin-sealed semiconductor device of the present invention electrically connects the island on which the semiconductor element is mounted, the lead arranged around the island, and the semiconductor element and the inner end portion of the lead. In the surface-mounted resin-sealed semiconductor device having a wire and a resin-sealed portion that covers a part of the island and the lead, the inner end of the lead is located above the lower surface of the resin-sealed portion together with the island. In addition, the leads led out from the resin sealing portion are led out from the lower surface of the resin sealing portion.
【０００７】本発明の樹脂封止型半導体装置はまた、樹
脂封止部の下面から導出されているリードが、略リード
の厚さ分だけ低い位置から導出されていることを特徴と
するものである。The resin-encapsulated semiconductor device of the present invention is also characterized in that the leads led out from the lower surface of the resin-encapsulated portion are led out from positions lower by about the thickness of the leads. is there.
【０００８】[0008]
【作用】本発明によれば、折曲げられたリードを使用し
ているので、樹脂封止後に樹脂封止部から導出されるリ
ードの加工を施さなくても基板上への表面実装が可能で
ある。そのため、曲げ加工時に発生するリードの寸法及
び形状不良を防止できると共に、検査工程や搬送中のリ
ード曲がりも防止できる。According to the present invention, since bent leads are used, it is possible to perform surface mounting on a substrate without processing the leads led out from the resin sealing portion after resin sealing. is there. Therefore, it is possible to prevent the lead size and shape from being defective during bending, and it is also possible to prevent the lead from bending during the inspection process and during transportation.
【０００９】[0009]
【実施例】以下、本発明の実施例を、図１〜４を参照し
つつ説明する。図１に示すように、本発明に使用される
リードフレームは、例えば、鉄ニッケル合金（４２アロ
イ）や銅合金の薄板を打抜きや化学処理することによ
り、半導体素子を搭載するアイランド２と、アイランド
２を取囲むよう配置された複数のリード３と、アイラン
ド２及びリード３を保持する外枠５とが形成されてお
り、複数のリード３はタイバー６で連結されると共に、
アイランド２はアイランドサポート７により外枠４に接
続されている。アイランド２の周囲に配置された複数の
リード３の内端部は、アイランド２と略同一面を形成す
るように延在するが、その先でほぼ直角に下方向に折曲
げられると共に、アイランド２と平行になるように再度
ほぼ直角に外向きに折曲げられている。Embodiments of the present invention will be described below with reference to FIGS. As shown in FIG. 1, the lead frame used in the present invention includes, for example, an island 2 on which a semiconductor element is mounted and an island 2 on which a semiconductor element is mounted by punching or chemically treating a thin plate of iron-nickel alloy (42 alloy) or copper alloy. A plurality of leads 3 arranged to surround 2 and an outer frame 5 for holding the island 2 and the leads 3 are formed. The plurality of leads 3 are connected by a tie bar 6, and
The island 2 is connected to the outer frame 4 by an island support 7. The inner ends of the plurality of leads 3 arranged around the island 2 extend so as to form substantially the same plane as the island 2, but are bent downward at a substantially right angle at the tip thereof, and the island 2 It is bent outward again at approximately a right angle so that it is parallel to.
【００１０】そして、図２に示すように、リードフレー
ムのアイランド２の表面にウエハプロセスで素子形成が
行われた半導体素子１をＡｇペーストやハンダ等で固着
し、半導体素子１のボンディングパッドとこれに対応す
るリード３の内端部をＡｕ線４によりワイヤボンディン
グする。次に、図３に示すように、アイランド２に半導
体素子１を搭載しワイヤボンディングを行ったリードフ
レームを上金型８と下金型９で挟持し、上金型８と下金
型９で形成されるキャビチィ内に熱硬化性樹脂、例えば
エポキシ樹脂を注入して半導体素子１が搭載されたアイ
ランド２及びリード３の樹脂封止を行う。Then, as shown in FIG. 2, the semiconductor element 1 on which the elements are formed by a wafer process is fixed on the surface of the island 2 of the lead frame by Ag paste, solder or the like, and the bonding pad of the semiconductor element 1 and the bonding pad are formed. The inner end portion of the lead 3 corresponding to is wire-bonded with the Au wire 4. Next, as shown in FIG. 3, the semiconductor element 1 is mounted on the island 2 and the lead frame which is wire-bonded is sandwiched between the upper mold 8 and the lower mold 9, and the upper mold 8 and the lower mold 9 are used. A thermosetting resin, for example, an epoxy resin is injected into the formed cavity to seal the island 2 on which the semiconductor element 1 is mounted and the leads 3 with resin.
【００１１】最後に、樹脂封止部１０を形成したリード
フレームを上金型８と下金型９から取り出し後、アイラ
ンド２と外枠５を接続するアイランドサポート７及び、
リード３間を連結するタイバー６を切断して、図４に示
す表面実装型の樹脂封止型半導体装置を製造する。図４
に示す表面実装型の樹脂封止型半導体装置は、半導体素
子１が搭載されたアイランド２及びワイヤボンディング
がされたリード３の内端部が略同一平面を形成してお
り、樹脂封止部１０の下面より上方に位置している。ア
イランド２の周囲に配置された複数のリード３は、その
先でほぼ直角に下方向に折曲げられると共に、アイラン
ド２と平行になるように再度ほぼ直角に外向きの折曲げ
られている。この状態で樹脂封止されると、リード３の
折曲げ部が樹脂封止部１０内に封止されとる共に、樹脂
封止部１０の下面からリード３が導出されるので、リー
ド３の加工を施す必要がなく、曲げ加工時に発生するリ
ードの寸法及び形状不良を防止と、検査工程や搬送中の
リード曲がりも防止できる。Finally, after taking out the lead frame having the resin sealing portion 10 from the upper mold 8 and the lower mold 9, an island support 7 for connecting the island 2 and the outer frame 5, and
The tie bar 6 connecting the leads 3 is cut to manufacture the surface-mounted resin-sealed semiconductor device shown in FIG. FIG.
In the surface-mounting type resin-sealed semiconductor device shown in (1), the inner ends of the island 2 on which the semiconductor element 1 is mounted and the leads 3 to which wire bonding is performed form substantially the same plane, and the resin-sealed portion 10 Is located above the lower surface of. The plurality of leads 3 arranged around the island 2 are bent downward at substantially a right angle at the tip thereof, and are bent outward again at a substantially right angle so as to be parallel to the island 2. When resin-sealed in this state, the bent portion of the lead 3 is sealed in the resin-sealed portion 10 and the lead 3 is led out from the lower surface of the resin-sealed portion 10. It is possible to prevent lead size and shape defects that occur during bending, and to prevent lead bending during the inspection process and during transportation.
【００１２】次に本発明の他の実施例を図５〜６を参照
しつつ説明する。本実施例で使用するリードフレーム及
び樹脂封止前までの工程は図１〜２と同一である。図５
に示すように、本実施例ではアイランド２に半導体素子
１を搭載しワイヤボンディングを行ったリードフレーム
を上金型８と下金型９で挟持する際に、リード３の厚さ
ｈ分だけ低い位置で挟持するようにしている。そして、
上金型８と下金型９で形成されるキャビチィ内に熱硬化
性樹脂、例えばエポキシ樹脂を注入して樹脂封止部の形
成を行う。Next, another embodiment of the present invention will be described with reference to FIGS. The lead frame used in this embodiment and the steps before resin sealing are the same as those in FIGS. Figure 5
As shown in FIG. 5, when the semiconductor element 1 is mounted on the island 2 and the lead frame bonded by wire bonding is sandwiched between the upper mold 8 and the lower mold 9, the thickness is reduced by the thickness h of the lead 3 in this embodiment. It is designed to be clamped at the position. And
A thermosetting resin such as an epoxy resin is injected into the cavity formed by the upper mold 8 and the lower mold 9 to form a resin sealing portion.
【００１３】最後に、樹脂封止部１０を形成したリード
フレームを上金型８と下金型９から取り出し後、アイラ
ンド２と外枠５を接続するアイランドサポート７及び、
リード３間を連結するタイバー６を切断して、図６に示
す表面実装型の樹脂封止型半導体装置を製造する。本実
施例の表面実装型の樹脂封止型半導体装置は、樹脂封止
部１０の下面から導出するリード３がその厚さ分ｈだけ
低い位置から導出している。この結果、曲げ加工時に発
生するリードの寸法及び形状不良の防止と、検査工程や
搬送中のリード曲がりも防止できる他、回路基板１１へ
の実装時に発生するおそれのある各リード３間の短絡を
防止できる。すなわち、樹脂封止部１０のリード３の下
面が同一面であると半田が流れ出して短絡する場合がる
が、樹脂封止部１０の下面がリード３の下面より上方に
あれば、より確実にリード３の半田付けを行うことがで
きる。Finally, after taking out the lead frame having the resin sealing portion 10 from the upper mold 8 and the lower mold 9, an island support 7 for connecting the island 2 and the outer frame 5, and
The tie bar 6 connecting the leads 3 is cut to manufacture the surface mount type resin-sealed semiconductor device shown in FIG. In the surface mount type resin-sealed semiconductor device of this embodiment, the lead 3 led out from the lower surface of the resin-sealed portion 10 is led out from a position lower by the thickness h thereof. As a result, it is possible to prevent lead size and shape defects that occur during bending, to prevent lead bending during inspection processes and during transportation, and to prevent short circuits between the leads 3 that may occur during mounting on the circuit board 11. It can be prevented. That is, if the lower surface of the lead 3 of the resin-sealed portion 10 is the same surface, the solder may flow out to cause a short circuit, but if the lower surface of the resin-sealed portion 10 is above the lower surface of the lead 3, it is more reliable. The leads 3 can be soldered.
【００１４】[0014]
【発明の効果】以上、説明したように本発明の樹脂封止
型半導体装置によれば、折曲げられたリードを使用して
いるので、樹脂封止後に樹脂封止部から導出されるリー
ドの加工を施さなくても基板上への表面実装が可能であ
る。そのため、曲げ加工時に発生するリードの寸法及び
形状不良を防止できると共に、検査工程や搬送中のリー
ド曲がりも防止できる。As described above, according to the resin-encapsulated semiconductor device of the present invention, since the bent leads are used, the leads led out from the resin-encapsulated portion after the resin encapsulation can be removed. Surface mounting is possible on the substrate without processing. Therefore, it is possible to prevent the lead size and shape from being defective during bending, and it is also possible to prevent the lead from bending during the inspection process and during transportation.
【００１５】また、樹脂封止部の下面がリードの下面よ
り上方にあれば、より確実にリードの半田付けを行うこ
とができる。さらに、樹脂封止後の最終工程でのフォー
ミング金型を使用しなくても良いので、フォーミング金
型のコスト削減でき、更にそのメンテナンスも不要とな
る。If the lower surface of the resin sealing portion is above the lower surface of the lead, the lead can be soldered more reliably. Furthermore, since it is not necessary to use a forming die in the final step after resin sealing, the cost of the forming die can be reduced, and its maintenance is also unnecessary.
【図１】本発明の使用するリードフレームを示す説明
図。FIG. 1 is an explanatory view showing a lead frame used in the present invention.
【図２】本発明の使用するリードフレームを示す説明
図。FIG. 2 is an explanatory view showing a lead frame used in the present invention.
【図３】本発明の樹脂封止方法を示す説明図。FIG. 3 is an explanatory view showing a resin sealing method of the present invention.
【図４】本発明の樹脂封止型半導体装置を示す説明図。FIG. 4 is an explanatory view showing a resin-sealed semiconductor device of the present invention.
【図５】本発明の樹脂封止方法を示す説明図。FIG. 5 is an explanatory view showing a resin sealing method of the present invention.
【図６】本発明の他の樹脂封止型半導体装置を示す説明
図。FIG. 6 is an explanatory view showing another resin-encapsulated semiconductor device of the present invention.
【図７】従来の樹脂封止型半導体装置を示す説明図。FIG. 7 is an explanatory diagram showing a conventional resin-sealed semiconductor device.
１ 半導体素子 ２ アイランド ３ リード ４ ワイヤ ５ 外枠 ６ タイバー ７ アイランドサポート １０ 樹脂封止部 1 semiconductor element 2 island 3 lead 4 wire 5 outer frame 6 tie bar 7 island support 10 resin encapsulation part
Claims (2)
記アイランドの周囲に配置されたリードと、前記半導体
素子とリードの内端部を電気的に接続するワイヤと、前
記アイランド及びリードの一部を覆う樹脂封止部を有す
る表面実装型の樹脂封止型半導体装置において、前記リ
ードは内端部がアイランドと共に樹脂封止部の下面より
上方に位置すると共に、前記樹脂封止部から導出される
リードは樹脂封止部の下面から導出されていることを特
徴とする樹脂封止型半導体装置。1. An island on which a semiconductor element is mounted, a lead arranged around the island, a wire electrically connecting the semiconductor element and an inner end portion of the lead, and a part of the island and the lead. In a surface-mounted resin-sealed semiconductor device having a resin-sealed portion that covers, the inner end portion of the lead is located above the lower surface of the resin-sealed portion together with the island, and the lead is led out from the resin-sealed portion. The resin-sealed semiconductor device, wherein the leads are led out from the lower surface of the resin-sealed portion.
おいて、前記樹脂封止部の下面から導出されているリー
ドが、略リードの厚さ分だけ低い位置から導出されてい
ることを特徴とする樹脂封止型半導体装置。2. The resin-encapsulated semiconductor device according to claim 1, wherein the lead derived from the lower surface of the resin-encapsulated portion is derived from a position lower by about the thickness of the lead. And a resin-encapsulated semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7120943A JPH08316371A (en) | 1995-05-19 | 1995-05-19 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7120943A JPH08316371A (en) | 1995-05-19 | 1995-05-19 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08316371A true JPH08316371A (en) | 1996-11-29 |
Family
ID=14798814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7120943A Pending JPH08316371A (en) | 1995-05-19 | 1995-05-19 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08316371A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169323B1 (en) | 1997-02-25 | 2001-01-02 | Oki Electric Industry Co., Ltd. | Semiconductor device with improved leads |
-
1995
- 1995-05-19 JP JP7120943A patent/JPH08316371A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169323B1 (en) | 1997-02-25 | 2001-01-02 | Oki Electric Industry Co., Ltd. | Semiconductor device with improved leads |
| EP0860877A3 (en) * | 1997-02-25 | 2001-02-28 | Oki Electric Industry Co., Ltd. | Semiconductor device and method for producing thereof |
| EP1577944A1 (en) * | 1997-02-25 | 2005-09-21 | Oki Electric Industry Co., Ltd. | Semiconductor device and method for production thereof |
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