JPH08274029A - Gas feeder - Google Patents

Gas feeder

Info

Publication number
JPH08274029A
JPH08274029A JP7513295A JP7513295A JPH08274029A JP H08274029 A JPH08274029 A JP H08274029A JP 7513295 A JP7513295 A JP 7513295A JP 7513295 A JP7513295 A JP 7513295A JP H08274029 A JPH08274029 A JP H08274029A
Authority
JP
Japan
Prior art keywords
gas
mass flow
flow controller
valve
supply device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7513295A
Other languages
Japanese (ja)
Other versions
JP2826479B2 (en
Inventor
Toshihide Kudo
敏秀 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP7075132A priority Critical patent/JP2826479B2/en
Publication of JPH08274029A publication Critical patent/JPH08274029A/en
Application granted granted Critical
Publication of JP2826479B2 publication Critical patent/JP2826479B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To remove residual gas in a mass flow controller when the gas feed is stopped for stably operating the mass flow controller constantly further cutting down the processing cycle time within the gas feeder feeding gas to a processing chamber. CONSTITUTION: A bypass piping 2 having a large conductance for exhausting residual gas in a mass flow controller 4 is directly arranged so that the gas in the mass flow controller 4 may be exhausted through a bypass piping 2 to remove the residual gas using a vacuum pump 7 during no processing time.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体基板などに表面
処理する処理室に腐食性ガスおよび低蒸気圧のガスを供
給するガス供給装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply device for supplying a corrosive gas and a gas having a low vapor pressure to a processing chamber for surface-treating a semiconductor substrate or the like.

【０００２】[0002]

【従来の技術】通常、半導体基板にエピタキシヤル膜や
ＣＶＤ膜など形成するのに処理室に半導体基板を収納
し、処理室を真空排気した後、ガスを導入し半導体基板
に成膜を施していた。この真空処理室にガスを供給する
ガス供給装置は、ガスの流量を常に一定にし処理室のガ
ス圧を安定に維持する必要があった。2. Description of the Related Art Usually, in order to form an epitaxial film or a CVD film on a semiconductor substrate, the semiconductor substrate is housed in a processing chamber, the processing chamber is evacuated, and then a gas is introduced to form a film on the semiconductor substrate. It was In the gas supply device that supplies gas to the vacuum processing chamber, it is necessary to keep the gas flow rate constant and maintain the gas pressure in the processing chamber stable.

【０００３】図３は従来のガス供給装置の一例を示す配
管系統図である。従来、この種のガス供給装置は、例え
ば、図３に示すように、第１の開閉弁６を介して真空ポ
ンプ７で真空排気される処理室８にガスの供給および遮
断を制御する第２の開閉弁５と、この第２の開閉弁５の
後段に配管９を介して接続されるとともに供給されるガ
スの流量を制御するマスフローコントローラ４と、マス
フローコントローラ４にガスの供給および遮断する第３
の開閉弁３とを備えていた。FIG. 3 is a piping system diagram showing an example of a conventional gas supply device. Conventionally, this type of gas supply device, for example, as shown in FIG. 3, a second gas supply device that controls supply and cutoff of gas to a processing chamber 8 that is evacuated by a vacuum pump 7 via a first opening / closing valve 6. The on-off valve 5, the mass flow controller 4 connected to the latter stage of the second on-off valve 5 through the pipe 9 and controlling the flow rate of the supplied gas, and the gas flow controller 4 for supplying and shutting off the gas to the mass flow controller 4. Three
And the on-off valve 3 of.

【０００４】図４は図３のガス供給装置の動作を説明す
るためのタイムチャートである。このガス供給装置によ
る処理室８へのガス供給動作は、図４に示すように、図
３の第２の開閉弁５および第３の開閉弁３を開きマスフ
ローコントローラ４を作動させ処理室８に一定流量のガ
スを供給する。次に、処理室８での半導体基板への処理
が完了すると、第３の開閉弁３を閉じガスの供給を停止
する。FIG. 4 is a time chart for explaining the operation of the gas supply device of FIG. As shown in FIG. 4, the gas supply operation by the gas supply device to the processing chamber 8 is performed by opening the second opening / closing valve 5 and the third opening / closing valve 3 in FIG. Supply a constant flow rate of gas. Next, when the processing on the semiconductor substrate in the processing chamber 8 is completed, the third on-off valve 3 is closed and the gas supply is stopped.

【０００５】しかる後、第２の開閉弁５と処理室８を介
して真空ポンプ７によりマスフローコントローラ４内を
一定時間真空排気する。そして、残留するガスが排気さ
れたら第２の開閉弁５を閉じ処理装置の動作を完了して
いた。Thereafter, the interior of the mass flow controller 4 is evacuated for a certain period of time by the vacuum pump 7 through the second opening / closing valve 5 and the processing chamber 8. Then, when the residual gas was exhausted, the second on-off valve 5 was closed and the operation of the processing device was completed.

【０００６】[0006]

【発明が解決しようとする課題】上述した従来のガス供
給装置では、ガス遮断時のバルブ動作に遅延時間を設け
マスフローコントローラ内を真空排気を行なっているも
のの、第１の開閉弁、処理室および第２の開閉弁を経由
して排気するので、排気経路が長くしかも排気抵抗が大
きい機構部品が存在するのでマスフローコントローラ内
の排気が不十分となり内部にガスが残る。この残留ガス
が腐食性のガスの場合、長時間ガスの供給停止している
間に、マスフローコントローラ内の層流素子やノズル、
ダイヤフラムなどの精密機構部品が残留ガスにより腐食
し、動作しないまでも精密に流量制御ができなくなると
いう問題があった。In the above-mentioned conventional gas supply apparatus, the mass flow controller is evacuated by evacuating the mass flow controller by delaying the valve operation when the gas is shut off. Since the gas is exhausted via the second on-off valve, there is a mechanical component having a long exhaust path and a large exhaust resistance, so that exhaust in the mass flow controller is insufficient and gas remains inside. If this residual gas is a corrosive gas, the laminar flow element or nozzle in the mass flow controller,
There has been a problem that precision mechanical parts such as diaphragms are corroded by residual gas, and even if they do not operate, precise flow rate control cannot be performed.

【０００７】また、残留ガスが低蒸気圧ガスである場
合、マスフローコントローラ内で残留ガスが再液化し精
密機構部品に液滴として付着し動作不良を起すという問
題があった。さらに、マスフローコントローラの排気動
作が処理室を排気とシリーズになっているので、一サイ
クルの時間がかるという欠点もあった。Further, when the residual gas is a low vapor pressure gas, there is a problem that the residual gas is reliquefied in the mass flow controller and adheres to the precision mechanical component as droplets to cause malfunction. Further, since the exhaust operation of the mass flow controller is in series with the exhaust of the processing chamber, there is a drawback that it takes one cycle.

【０００８】従って、本発明の目的は、ガスの供給の停
止したときにマスフロコントローラ内に残るガスを完全
に取り去りマスフローコントローラを常に安定して動作
させるとともに処理サイクル時間をより短縮できるガス
供給装置を提供することである。Therefore, an object of the present invention is to completely remove the gas remaining in the mass flow controller when the gas supply is stopped so that the mass flow controller can always operate stably and the processing cycle time can be further shortened. Is to provide.

【０００９】[0009]

【課題を解決するための手段】本発明の特徴は、第１の
開閉弁を介して真空ポンプで真空排気される処理室にガ
スの供給および遮断を制御する第２の開閉弁と、この第
２の開閉弁の後段に配管を介して接続されるとともに供
給される前記ガスの流量を制御するマスフローコントロ
ーラに前記ガスの供給および遮断する第３の開閉弁とを
備えるガス供給装置において、前記ガスの供給遮断時に
前記マスフローコントローラ内に残留ガスを前記真空ポ
ンプで排気するために前記配管と前記真空ポンプとを連
結するバイパス配管と、このバイパス配管の途中に設け
られる第４の開閉弁とを備えるガス供給装置である。A feature of the present invention is to provide a second on-off valve for controlling gas supply and shutoff to a processing chamber which is evacuated by a vacuum pump via the first on-off valve, and a second on-off valve. A gas supply device comprising a mass flow controller connected to a latter stage of the second opening / closing valve via a pipe and controlling a flow rate of the supplied gas, and a third opening / closing valve for supplying and shutting off the gas. A bypass pipe that connects the pipe and the vacuum pump to exhaust the residual gas in the mass flow controller when the supply of the gas is cut off, and a fourth on-off valve provided in the middle of the bypass pipe. It is a gas supply device.

【００１０】また、前記マスフローコントローラに乾燥
窒素を第５の開閉弁を介して供給する窒素供給装置を備
えることが望ましい。Further, it is desirable that the mass flow controller is equipped with a nitrogen supply device for supplying dry nitrogen through a fifth opening / closing valve.

【００１１】[0011]

【実施例】次に、本発明について図面を参照して説明す
る。Next, the present invention will be described with reference to the drawings.

【００１２】図１（ａ）および（ｂ）は本発明のガス供
給装置の一実施例を示す配管系統図およびタイムチャー
トである。このガス供給装置は、図１（ａ）に示すよう
に、ガスの供給遮断時にマスフローコントローラ４内に
残留ガスを真空ポンプ７で排気するために配管９と真空
ポンプ７とを連結するバイパス配管２と、このバイパス
配管２の途中に設けられる第４の開閉弁１とを備えてい
る。それ以外は従来例と同じである。1 (a) and 1 (b) are a piping system diagram and a time chart showing an embodiment of the gas supply apparatus of the present invention. As shown in FIG. 1A, this gas supply device includes a bypass pipe 2 that connects a pipe 9 and a vacuum pump 7 for exhausting residual gas into the mass flow controller 4 by the vacuum pump 7 when the gas supply is cut off. And a fourth on-off valve 1 provided in the middle of the bypass pipe 2. Otherwise, it is the same as the conventional example.

【００１３】次に、このガス供給装置の動作を説明す
る。まず、図１（ｂ）に示すように、処理室８で半導体
基板の処理を行うときは、閉じていた第２の開閉弁５と
第３の開閉弁３が開き、第４の開閉弁１が閉じ処理室８
にガスが供給される。次に、半導体基板の処理が完了す
ると、第２の開閉弁５と第３の開閉弁３が閉じ、第４の
開閉弁１が開き、マスフローコントローラ４内に残留す
るガスはバイパス配管２を通して真空ポンプ７で排気さ
れる。そして、図面では示していないが、バイパス配管
２に取り付けられた真空計で圧力を検知し到達圧力を示
したら、第４の開閉弁１を閉じる。Next, the operation of this gas supply device will be described. First, as shown in FIG. 1B, when the semiconductor substrate is processed in the processing chamber 8, the closed second on-off valve 5 and third on-off valve 3 are opened, and the fourth on-off valve 1 is opened. Closed Processing room 8
Is supplied with gas. Next, when the processing of the semiconductor substrate is completed, the second opening / closing valve 5 and the third opening / closing valve 3 are closed, the fourth opening / closing valve 1 is opened, and the gas remaining in the mass flow controller 4 is vacuumed through the bypass pipe 2. Exhausted by the pump 7. Although not shown in the drawing, when the pressure is detected by the vacuum gauge attached to the bypass pipe 2 and the ultimate pressure is indicated, the fourth on-off valve 1 is closed.

【００１４】このように、コンダクタンスの大きなバイ
パス配管２を介して真空排気することによって、マスフ
ローコントローラ４に残留するガスは従来の１／３以下
の時間で取り除くことができた。また、装置が停止して
いる間に排気動作を行なえるので、一サイクルの時間も
短縮することができた。As described above, the gas remaining in the mass flow controller 4 can be removed in less than ⅓ of the conventional time by vacuum exhausting through the bypass pipe 2 having a large conductance. Moreover, since the exhaust operation can be performed while the apparatus is stopped, the time for one cycle can be shortened.

【００１５】なお、この実施例では、マスフローコント
ローラ４を真空排気する真空ポンプ７を処理室８を真空
排気する真空ポンプ７と共用にせているが、勿論、専用
に真空ポンプを設けても良い。In this embodiment, the vacuum pump 7 for evacuating the mass flow controller 4 is also used as the vacuum pump 7 for evacuating the processing chamber 8. However, of course, a dedicated vacuum pump may be provided.

【００１６】図２は本発明のガス供給装置の他の実施例
を示す配管系統図である。このガス供給装置は、図２に
示すように、マスフローコントローラ４に乾燥窒素を供
給する窒素ボンベ１１と、乾燥窒素の供給および遮断を
行なう第５の開閉弁を設けたことである。それ以外は前
述の実施例と同じである。FIG. 2 is a piping system diagram showing another embodiment of the gas supply apparatus of the present invention. As shown in FIG. 2, this gas supply device is provided with a nitrogen cylinder 11 for supplying dry nitrogen to the mass flow controller 4, and a fifth opening / closing valve for supplying and shutting off dry nitrogen. Other than that is the same as the above-mentioned embodiment.

【００１７】このガス供給装置の動作は、マスフローコ
ントローラ４に残留するガスを排気する際に、第５の開
閉弁１０を開き、乾燥窒素をマスフローコントローラに
供給しながら真空ポンプ７で排気し、残留するガスを完
全に窒素で置換することである。特に真空ポンプ７の真
空到達圧力が小さい場合は効果がある。The operation of this gas supply device is such that, when the gas remaining in the mass flow controller 4 is exhausted, the fifth opening / closing valve 10 is opened, and dry nitrogen is supplied to the mass flow controller while being exhausted by the vacuum pump 7 and left. The gas is completely replaced with nitrogen. This is particularly effective when the ultimate vacuum pressure of the vacuum pump 7 is small.

【００１８】[0018]

【発明の効果】以上説明したように本発明は、マスフロ
ーコントローラに残留するガスを排気するために大きな
コンダクタンスをもつバイパス配管を直接マスフローコ
ントローラに配設し、必要に応じて乾燥窒素を送り込み
ながら真空ポンプでマスフローコントローラをバイパス
配管を通して排気することによって完全に残留ガスを取
り去ることができ、ガスの残留によるマスフローコント
ローラの精密機構部品の錆や動作不良を起す液滴の付着
が無くなり常に安定してマスフローコントローラを動作
することができるという効果がある。As described above, according to the present invention, a bypass pipe having a large conductance for exhausting the gas remaining in the mass flow controller is directly arranged in the mass flow controller, and a vacuum is supplied while sending dry nitrogen as necessary. Residual gas can be completely removed by exhausting the mass flow controller through a bypass pipe with a pump, and there is no rust on the precision mechanical parts of the mass flow controller due to residual gas or adhesion of droplets that cause malfunctions, so stable mass flow is always possible. The effect is that the controller can be operated.

【００１９】また、このマスフローコントローラの残留
ガスの排気動作は、処理室で処理停止の間で並行して行
なえるので、一処理サイクル時間を短縮できるという効
果もある。Further, since the exhaust operation of the residual gas of the mass flow controller can be performed in parallel while the processing is stopped in the processing chamber, there is an effect that one processing cycle time can be shortened.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明のガス供給装置の一実施例を示す配管系
統図およびタイムチャートである。FIG. 1 is a piping system diagram and a time chart showing an embodiment of a gas supply device of the present invention.

【図２】本発明のガス供給装置の他の実施例を示す配管
系統図である。FIG. 2 is a piping system diagram showing another embodiment of the gas supply device of the present invention.

【図３】従来のガス供給装置の一例を示す配管系統図で
ある。FIG. 3 is a piping system diagram showing an example of a conventional gas supply device.

【図４】図３のガス供給装置の動作を説明するためのタ
イムチャートである。FIG. 4 is a time chart for explaining the operation of the gas supply device of FIG.

【符号の説明】[Explanation of symbols]

１ 第４の開閉弁 ２ バイパス配管 ３ 第３の開閉弁 ４ マスフローコントローラ ５ 第２の開閉弁 ６ 第１の開閉弁 ７ 真空ポンプ ８ 処理室 ９ 配管 １０ 第５の開閉弁 １１ 窒素ボンベ 1 4th on-off valve 2 Bypass piping 3 3rd on-off valve 4 Mass flow controller 5 2nd on-off valve 6 1st on-off valve 7 Vacuum pump 8 Processing chamber 9 Piping 10 5th on-off valve 11 Nitrogen cylinder

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 第１の開閉弁を介して真空ポンプで真空
排気される処理室にガスの供給および遮断を制御する第
２の開閉弁と、この第２の開閉弁の後段に配管を介して
接続されるとともに供給される前記ガスの流量を制御す
るマスフローコントローラに前記ガスの供給および遮断
する第３の開閉弁とを備えるガス供給装置において、前
記ガスの供給遮断時に前記マスフローコントローラ内に
残留ガスを前記真空ポンプで排気するために前記配管と
前記真空ポンプとを連結するバイパス配管と、このバイ
パス配管の途中に設けられる第４の開閉弁とを備えるこ
とを特徴とするガス供給装置。1. A second opening / closing valve for controlling the supply and interruption of gas to a processing chamber that is evacuated by a vacuum pump via the first opening / closing valve, and a pipe after the second opening / closing valve. In a gas supply device comprising: a mass flow controller that is connected and connected to control a flow rate of the supplied gas, and a third opening / closing valve that supplies and cuts off the gas, in a mass flow controller when the supply of the gas is cut off. A gas supply device comprising: a bypass pipe connecting the pipe and the vacuum pump to exhaust gas by the vacuum pump; and a fourth on-off valve provided in the middle of the bypass pipe. 【請求項２】 前記マスフローコントローラに乾燥窒素
を第５の開閉弁を介して供給する窒素供給装置を備える
ことを特徴とする請求項１記載のガス供給装置。2. The gas supply device according to claim 1, further comprising a nitrogen supply device for supplying dry nitrogen to the mass flow controller via a fifth opening / closing valve.
JP7075132A 1995-03-31 1995-03-31 Gas supply device and operation method thereof Expired - Lifetime JP2826479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7075132A JP2826479B2 (en) 1995-03-31 1995-03-31 Gas supply device and operation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7075132A JP2826479B2 (en) 1995-03-31 1995-03-31 Gas supply device and operation method thereof

Publications (2)

Publication Number Publication Date
JPH08274029A true JPH08274029A (en) 1996-10-18
JP2826479B2 JP2826479B2 (en) 1998-11-18

Family

ID=13567369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7075132A Expired - Lifetime JP2826479B2 (en) 1995-03-31 1995-03-31 Gas supply device and operation method thereof

Country Status (1)

Country Link
JP (1) JP2826479B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103370768A (en) * 2011-03-01 2013-10-23 应用材料公司 Vacuum chambers with shared pump
JP2016201530A (en) * 2015-04-08 2016-12-01 東京エレクトロン株式会社 Gas supply control method
JP2018185194A (en) * 2017-04-25 2018-11-22 三菱電機株式会社 Gas analyzer
CN116200624A (en) * 2023-02-21 2023-06-02 辽宁科技学院 Degassing device for hypereutectic aluminum-silicon alloy production

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0323624A (en) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd Method and apparatus for vapor growth
JPH0547665A (en) * 1991-08-12 1993-02-26 Fujitsu Ltd Vapor growth method
JPH05206033A (en) * 1992-01-28 1993-08-13 Kokusai Electric Co Ltd Cvd film deposition method and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0323624A (en) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd Method and apparatus for vapor growth
JPH0547665A (en) * 1991-08-12 1993-02-26 Fujitsu Ltd Vapor growth method
JPH05206033A (en) * 1992-01-28 1993-08-13 Kokusai Electric Co Ltd Cvd film deposition method and apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103370768A (en) * 2011-03-01 2013-10-23 应用材料公司 Vacuum chambers with shared pump
JP2016201530A (en) * 2015-04-08 2016-12-01 東京エレクトロン株式会社 Gas supply control method
JP2018185194A (en) * 2017-04-25 2018-11-22 三菱電機株式会社 Gas analyzer
CN116200624A (en) * 2023-02-21 2023-06-02 辽宁科技学院 Degassing device for hypereutectic aluminum-silicon alloy production

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