JPH08241859A - Projection exposure method - Google Patents
Projection exposure methodInfo
- Publication number
- JPH08241859A JPH08241859A JP8012513A JP1251396A JPH08241859A JP H08241859 A JPH08241859 A JP H08241859A JP 8012513 A JP8012513 A JP 8012513A JP 1251396 A JP1251396 A JP 1251396A JP H08241859 A JPH08241859 A JP H08241859A
- Authority
- JP
- Japan
- Prior art keywords
- reduction
- substrate
- reticle
- mark
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子の製造工程
で使用される縮小投影露光方法の改良に係り、特に、こ
の種の装置において寸法精度が厳しく要求される高精度
な半導体素子作成時に生じる縮小倍率誤差を自動的に補
正して縮小露光する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a reduced projection exposure method used in a process of manufacturing a semiconductor device, and particularly to a method of manufacturing a highly accurate semiconductor device which requires strict dimensional accuracy in this type of apparatus. The present invention relates to a method for automatically correcting a generated reduction magnification error and performing reduction exposure.
【０００２】[0002]
【従来の技術】従来の縮小投影露光装置は、図３に原理
構成を示したような光学系を基本として、原画４２のパ
ターンを縮小レンズ４３を用いて、基板４４の上に投影
している。縮小レンズ４３と基板４４との距離をａ、縮
小レンズ４３と原画４２との距離をｂとすると光学系内
の屈折率分布が一定である限り縮小倍率ｍはｍ＝ａ／
ｂ、焦点距離ｆは１／ｆ＝１／ａ＋１／ｂで表わされ
る。2. Description of the Related Art A conventional reduction projection exposure apparatus projects a pattern of an original 42 on a substrate 44 by using a reduction lens 43 based on an optical system whose principle configuration is shown in FIG. . Assuming that the distance between the reduction lens 43 and the substrate 44 is a and the distance between the reduction lens 43 and the original image b is b, the reduction magnification m is m = a / as long as the refractive index distribution in the optical system is constant.
b, the focal length f is represented by 1 / f = 1 / a + 1 / b.
【０００３】[0003]
【発明が解決しようとする課題】従来の縮小投影露光装
置においては上述距離ａとｂとが固定されているため、
原画４２から基板４４に至るまでの光学系の光路内の媒
体物の条件が変わったりなどして屈折率の分布が変化す
ると、光学系上の上述距離ａ，ｂが屈折率の関数とな
り、変化して縮小倍率ｍが変わってしまい、基板４４上
に投影されるパターンの寸法精度が劣化する欠点があっ
た。In the conventional reduction projection exposure apparatus, since the distances a and b are fixed,
When the distribution of the refractive index changes due to a change in the condition of a medium in the optical path of the optical system from the original image 42 to the substrate 44, the distances a and b on the optical system become functions of the refractive index. As a result, the reduction magnification m changes, and the dimensional accuracy of the pattern projected on the substrate 44 deteriorates.
【０００４】したがって、本発明の目的は、縮小投影光
学系内の媒体物の屈折率分布等の変化により縮小倍率誤
差を生じて原画から基板上に縮小投影されるパターンの
絶対寸法精度が劣化することを防ぎ、常に、高精度な絶
対寸法の半導体素子を自動的に作ることを可能ならしめ
る縮小投影露光方法を提供することにある。Therefore, an object of the present invention is to reduce the magnification error due to a change in the refractive index distribution of the medium in the reduction projection optical system, thereby deteriorating the absolute dimensional accuracy of the pattern reduced and projected from the original image onto the substrate. It is an object of the present invention to provide a reduction projection exposure method that prevents such problems and always enables the automatic fabrication of highly accurate semiconductor devices with absolute dimensions.
【０００５】[0005]
【課題を解決するための手段】上記目的は、基板と原画
とを所定の倍率の縮小投影露光装置のそれぞれの位置に
装着する工程と、上記基板のマ−クを上記縮小投影露光
装置の縮小レンズを通して検出し、縮小投影倍率を補正
する工程とを含むことを特徴とする投影露光方法により
達成することができる。The object is to mount a substrate and an original image at respective positions of a reduction projection exposure apparatus of a predetermined magnification, and to make the mark of the substrate reduction of the reduction projection exposure apparatus. Detecting through a lens and correcting the reduced projection magnification.
【作用】所定の倍率の縮小投影露光装置を用い、所定の
縮小倍率の誤差を補正することにより、高精度な絶対寸
法を有するパタ−ンを形成できる。By using the reduction projection exposure apparatus of a predetermined magnification and correcting the error of the predetermined reduction magnification, it is possible to form a pattern having highly accurate absolute dimensions.
【０００６】[0006]
【実施例】以下、本発明の一実施例を図２により説明す
る。An embodiment of the present invention will be described below with reference to FIG.
【０００７】原画であるレティクル２２上のパターンを
光源（図示していない）からの照明光をコンデンサレン
ズ２１で集光して照明し、縮小レンズ２３を通して基板
２４上に縮小投影させる。図２内で斜線を付した部分
は、固定されて不動状態の基準部材である。A pattern on a reticle 22 as an original image is illuminated by condensing illumination light from a light source (not shown) by a condenser lens 21, and is reduced and projected on a substrate 24 through a reduction lens 23. A hatched portion in FIG. 2 is a fixed and immovable reference member.
【０００８】基板２４は光軸方向に可動なＺ移動台３０
と光軸と直角な平面内で可動なＸＹ移動台３１とで構成
される移動台上に設置され、縮小レンズ２３により結像
される焦点位置に基板２４面が常に保持されるように、
特公昭５５−１８０４３号で示したような、自動焦点機
構が具備されている。基板２４の相対位置は、移動台の
位置をレーザ測長計３９で測長し、演算回路３５で求め
ることができる。[0008] The substrate 24 is a Z movable table 30 movable in the optical axis direction.
And an XY moving table 31 which is movable in a plane perpendicular to the optical axis, and is installed on a moving table so that the surface of the substrate 24 is always held at a focal position where an image is formed by the reduction lens 23.
An automatic focusing mechanism is provided as shown in Japanese Examined Patent Publication No. 55-18043. The relative position of the substrate 24 can be obtained by the arithmetic circuit 35 by measuring the position of the movable table with the laser length meter 39.
【０００９】縮小レンズ２３は、光軸方向のみに可動な
ように基準部材に対して案内部材３２で支持され、駆動
モータ３３によって光軸方向に微動でき、その微動量
は、例えば、差動コイル３４によって測長され、レンズ
上下制御回路３８に帰還される。The reduction lens 23 is supported by a guide member 32 with respect to a reference member so as to be movable only in the optical axis direction, and can be finely moved in the optical axis direction by a drive motor 33. The length is measured by 34 and fed back to the lens up / down control circuit 38.
【００１０】ここで、縮小倍率の測定方法について、図
１（ａ），（ｂ），（ｃ）を用いて述べる。Here, a method of measuring the reduction magnification will be described with reference to FIGS. 1 (a), 1 (b) and 1 (c).
【００１１】この縮小投影露光装置はコンデンサレンズ
１、レティクル２、縮小投影レンズ３、基板４、および
第１のパターン検出器５、第２のパターン検出器６から
構成されている。原画であるレティクル２上には所定の
間隔Ｌ（図１（ｂ）参照）を隔てた位置に正方形の光透
過性の窓７，８が設けられている。図１（ｂ）は上述の
窓７，８の拡大図を示したものである。基板４上のマー
ク９を縮小レンズ３およびレティクル２の窓７を通して
見るとマーク９′のようになり、また、基板４を所定距
離ｌだけ移動して窓８から見るとマーク９″のようにな
る（図１（ｂ）参照）。This reduction projection exposure apparatus comprises a condenser lens 1, a reticle 2, a reduction projection lens 3, a substrate 4, a first pattern detector 5 and a second pattern detector 6. Square light-transmitting windows 7 and 8 are provided on the reticle 2, which is an original image, at positions separated by a predetermined distance L (see FIG. 1B). FIG. 1B shows an enlarged view of the windows 7 and 8 described above. When the mark 9 on the substrate 4 is seen through the reduction lens 3 and the window 7 of the reticle 2, it becomes like a mark 9 ', and when the substrate 4 is moved by a predetermined distance l and seen from the window 8, it becomes like a mark 9 ". (See FIG. 1B).
【００１２】パターン検出器５はレティクル２の窓７内
におけるマーク９′の位置を、またパターン検出器６は
レティクル２の窓８内におけるマーク９″の位置を各々
測長することができ、２つのマーク９′と９″との相対
距離がレティクル２の窓７と８との間隔Ｌに比べてずれ
ている量ΔＬを演算することができる。The pattern detector 5 can measure the position of the mark 9 'in the window 7 of the reticle 2, and the pattern detector 6 can measure the position of the mark 9 "in the window 8 of the reticle 2. It is possible to calculate the amount ΔL in which the relative distance between the two marks 9 ′ and 9 ″ is deviated from the distance L between the windows 7 and 8 of the reticle 2.
【００１３】今、縮小投影光学系の縮小倍率をｍ（ｍ＜
１）とすると、ｌ＝ｍＬとなるように、基板４のマーク
９を移動したにもかかわらずΔＬだけ大きくずれたとす
ると、ｌ＝（ｍ＋Δｍ）（Ｌ＋ΔＬ）なる関係を満す。
Δｍだけ縮小倍率誤差となり、光学系によって縮小しす
ぎていることになる。Now, the reduction magnification of the reduction projection optical system is set to m (m <m <
Assuming that 1), assuming that the mark 9 on the substrate 4 is largely displaced by ΔL so that 1 = mL, the relationship of 1 = (m + Δm) (L + ΔL) is satisfied.
The reduction magnification error is Δm, which means that the image is excessively reduced by the optical system.
【００１４】一方、図１（ｃ）に示したように、縮小投
影光学系において、レティクル２と縮小レンズ３との間
隔ｂがΔｂだけ大きくなっている時には、上述のように
マーク９をｌだけ移動させた時に、ΔＬ／Δｂ＝Ｌ／ｂ
なる関係を満すΔＬだけ、マーク９′と９″とがずれる
ことになる。On the other hand, as shown in FIG. 1C, when the distance b between the reticle 2 and the reduction lens 3 is increased by Δb in the reduction projection optical system, the mark 9 is changed by 1 as described above. When moved, ΔL / Δb = L / b
The marks 9 'and 9 "are shifted by ΔL satisfying the following relationship.
【００１５】従って、第１，第２のパターン検出器５，
６で検出されたマーク９の位置ずれ量ΔＬからΔｂ＝Δ
Ｌ・ｂ／Ｌなる関係を満す量だけ縮小レンズ３とレティ
クル２との相対距離を狭くすれば縮小倍率誤差Δｍが零
になる。ΔＬが負の値の時はΔｂだけ縮小レンズ３とレ
ティクル２との間隔を大きくすれば良い。Therefore, the first and second pattern detectors 5,
From the displacement amount ΔL of the mark 9 detected in step 6, Δb = Δ
If the relative distance between the reduction lens 3 and the reticle 2 is reduced by an amount that satisfies the relationship L · b / L, the reduction magnification error Δm becomes zero. When ΔL is a negative value, the distance between the reduction lens 3 and the reticle 2 may be increased by Δb.
【００１６】実施例としては、１／１０縮小投影露光装
置の場合として、ｍ＝０.１，ｆ＝４９．２mm，ａ＝５
４.１２７mm，ｂ＝５４１.２７mm，ｌ＝１０mmなる値と
なる。この時，Δｍ＝０.０００００１（１０-4％）だ
け大きい縮小倍率誤差があると、Ｌ0＝１００mmのパタ
ーンは、Ｌ0（ｍ＋Δｍ）から（１０mm−０.１μｍ）の
寸法となり０.１μｍだけ小さな寸法誤差を生じてしま
う。このような状態を第１，第２のパターン検出器５，
６で測定すると、長さｌ＝１０mmはＬ＋ΔＬ＝ｌ／（ｍ
＋Δｍ），Ｌ＝１００mmに対してΔＬ＝１μｍ大きく検
出される。As an embodiment, assuming a 1/10 reduction projection exposure apparatus, m = 0.1, f = 49.2 mm, a = 5
The values are 4.127 mm, b = 541.27 mm, and l = 10 mm. At this time, if there is a large reduction error by Δm = 0.000001 (10 −4 %), the pattern of L 0 = 100 mm becomes the dimension of L 10 (m + Δm) to (10 mm-0.1 μm). Only a small dimensional error will occur. In such a state, the first and second pattern detectors 5,
When measured with 6, the length l = 10 mm is L + ΔL = 1 / (m
+ Δm) and L = 100 mm, ΔL = 1 μm is detected larger.
【００１７】この際、Δｂ＝５.４μｍだけ縮小レンズ
３とレティクル２との間隔を狭くすれば、縮小倍率誤差
は消えることになる。At this time, if the distance between the reduction lens 3 and the reticle 2 is reduced by Δb = 5.4 μm, the reduction magnification error disappears.
【００１８】以上述べたことから判るように、所定間隔
Ｌ離れたレティクル２上から縮小レンズ３を通して所定
量ｌだけ移動した基板４上のマーク９の位置ずれ量ΔＬ
を測定するだけで、縮小倍率誤差が求まり、Δｂ＝ΔＬ
・ｂ／Ｌなる関係を満すように縮小レンズ３とレティク
ル２との間隔を微調することにより、縮小倍率誤差が補
正できる。As can be seen from the above description, the positional deviation ΔL of the mark 9 on the substrate 4 moved by a predetermined amount 1 through the reduction lens 3 from the reticle 2 separated by a predetermined distance L.
, The reduction magnification error is obtained, and Δb = ΔL
The reduction magnification error can be corrected by finely adjusting the distance between the reduction lens 3 and the reticle 2 so as to satisfy the relationship of b / L.
【００１９】ところで、従来の縮小投影露光装置では、
一度正確にレティクル２と縮小レンズ３との距離ｂを固
定すれば、縮小倍率は変化することはなかった。In a conventional reduction projection exposure apparatus,
Once the distance b between the reticle 2 and the reduction lens 3 was accurately fixed, the reduction magnification did not change.
【００２０】しかし、近年、半導体素子の高精度化に伴
って原画、つまりレティクル２面に塵埃が付着すること
を防ぐため、レティクル２をカバーガラスでおおった
り、縮小レンズ３と基板４との間に空気以外の媒体物を
介在させて作動させる縮小投影露光装置が開発されてい
る。このように、縮小投影光学系に空気以外の媒体物を
介在させる場合、その媒体物の屈折率やその媒体物の厚
さが一定値を保つ限りにおいては、一度、屈折率の異な
ることによって生じる縮小倍率誤差を修正すれば良いの
であるが、通常は、媒体物の屈折率や厚さを一定に保持
することは極めて困難であり、そのために縮小倍率誤差
を生じてしまうことになる。However, in recent years, in order to prevent dust from adhering to the original image, that is, the surface of the reticle 2 due to the higher precision of semiconductor elements, the reticle 2 is covered with a cover glass, or between the reduction lens 3 and the substrate 4. There has been developed a reduction projection exposure apparatus which operates by interposing a medium other than air in it. As described above, when a medium object other than air is interposed in the reduction projection optical system, as long as the refractive index of the medium object and the thickness of the medium object maintain a constant value, it is caused by the once different refractive index. It is sufficient to correct the reduction magnification error. However, it is usually extremely difficult to keep the refractive index and the thickness of the medium object constant, and therefore, a reduction magnification error occurs.
【００２１】そこで、本発明では、上述したような、縮
小露光光学系の間に任意の屈折率や厚さの媒体物が存在
しても、常に上述したようなパターン検出器５，６を用
いて縮小倍率誤差を検出し、補正することを可能とする
点に特徴がある。Therefore, in the present invention, the above-described pattern detectors 5 and 6 are always used even if a medium having an arbitrary refractive index or thickness exists between the reduction exposure optical system as described above. It is characterized in that a reduction magnification error can be detected and corrected.
【００２２】ここで、図２の実施例にもどって本発明を
さらに詳細に説明する。パターン検出器２５はレティク
ル２２、縮小レンズ２３を通して、基板２４上のマーク
２９の位置を検出し、検出信号は検出回路３７、演算回
路３６に送られ、レンズ上下制御回路３８によって、モ
ータ３３等の駆動系により、縮小レンズ２３が光軸方向
に微動されることになる。Now, the present invention will be described in more detail by returning to the embodiment shown in FIG. The pattern detector 25 detects the position of the mark 29 on the substrate 24 through the reticle 22 and the reduction lens 23, and a detection signal is sent to a detection circuit 37 and an arithmetic circuit 36. The driving system causes the reduction lens 23 to be slightly moved in the optical axis direction.
【００２３】任意の屈折率や厚さの媒体物は、図示して
いないが、レティクル２２と縮小レンズ２３および基板
２４との間のどこに存在していても、本発明の機能が生
かされる。Although a medium having an arbitrary refractive index or thickness is not shown, the function of the present invention can be utilized wherever it exists between the reticle 22 and the reduction lens 23 and the substrate 24.
【００２４】なお、本発明の実施例では、基板４（２
４）上の１つのマーク９（２９）を所定距離ｌだけ移動
させ、レティクル２（２２）のＬだけ離れた窓７，８に
対する位置を計測しているが、基板４（２４）上のマー
ク９は、所定距離ｌだけ離れた２つのマークを、同時に
パターン検出することも可能である。また、同時にパタ
ーン検出し、そのレティクル２（２２）の窓７，８に対
するずれ量ΔＬを測長せず、所定の２つの窓７，８の決
められた位置に基板４（２４）上のマーク９が合うよう
に、縮小レンズ３（２３）を上下動させて制御すること
も応用例として考えられる。さらに、レティクル２（２
２）上の２ヶ所の窓７，８の位置は、所定の距離Ｌさえ
判れば、任意の場所で良く、２つのパターン検出器５，
６の原点の精度が良ければ、基板４（２４）上のマーク
９をレティクル２（２２）上の窓７，８に対して検出せ
ず、パターン検出器５，６の原点に対して検出しても良
い。In the embodiment of the present invention, the substrate 4 (2
4) One mark 9 (29) on the substrate 4 (24) is moved by a predetermined distance 1 to measure the position of the reticle 2 (22) with respect to the windows 7 and 8 separated by L. It is also possible for 9 to simultaneously detect the patterns of two marks separated by a predetermined distance l. Further, the pattern is detected at the same time, and the amount of deviation ΔL of the reticle 2 (22) with respect to the windows 7 and 8 is not measured, and the mark on the substrate 4 (24) is set at a predetermined position of the two predetermined windows 7 and 8. It is also considered as an application example to control the reduction lens 3 (23) by moving it up and down so that 9 is matched. In addition, reticle 2 (2
2) The positions of the upper two windows 7 and 8 may be arbitrary as long as the predetermined distance L is known, and the two pattern detectors 5 and
If the accuracy of the origin of 6 is good, the mark 9 on the substrate 4 (24) is not detected with respect to the windows 7 and 8 on the reticle 2 (22), but is detected with respect to the origin of the pattern detectors 5 and 6. May be.
【００２５】また、パターン検出器５，６は独立に２台
設けなくても、１台のパターン検出器を所定距離Ｌだけ
移動させ、あるいは、そのような機能や検出範囲を１台
のパターン検出器にもたせることも可能である。Further, even if two pattern detectors 5 and 6 are not provided independently, one pattern detector is moved by a predetermined distance L, or such function and detection range are detected by one pattern detector. It is also possible to put it in a container.
【００２６】本発明の実施例では、縮小レンズ３（２
３）とレティクル２（２２）との相対間隔調整を縮小レ
ンズ３（２３）を上下させることで達しているが、両者
の相対距離を調整すれば良いのであるから、縮小レンズ
３（２３）と同様に、光軸方向のみに可動な公知の案内
駆動手段でレティクル２（２２）を上下することで目的
を達することも可能である。In the embodiment of the present invention, the reduction lens 3 (2
3) and the reticle 2 (22) are adjusted by moving the reduction lens 3 (23) up and down, but it is sufficient to adjust the relative distance between the two. Similarly, it is possible to achieve the purpose by moving the reticle 2 (22) up and down by a known guide driving means that is movable only in the optical axis direction.
【００２７】なお、縮小倍率の調整によって、結像面の
最適焦点位置までの距離ａが変わり、それに伴って縮小
倍率も若干変わるが、通常、縮小レンズ３（２３）は、
テレセントリックな結像光学レンズを用いるため距離ａ
の変化による縮小倍率誤差や焦点ボケはわずかである。
従って、先ず、媒体物が変化した際には、基板４（２
４）上のマーク９（２９）への焦点合わせを行なった後
に、上述の方法で、縮小倍率誤差の補正を行ない、さら
に、高精度な補正を必要とする場合には、再度、焦点合
わせを行った後、縮小倍率の補正を繰返せば良いこと
は、容易に考えられる。It should be noted that the adjustment of the reduction magnification changes the distance a to the optimum focus position on the image forming surface, and accordingly the reduction magnification also slightly changes.
Distance a due to use of telecentric imaging optical lens
There is little reduction magnification error and defocus due to changes in.
Therefore, first, when the medium object changes, the substrate 4 (2
4) After focusing on the upper mark 9 (29), the reduction magnification error is corrected by the above-described method, and if high-precision correction is required, the focusing is performed again. It is easily conceivable that the correction of the reduction ratio should be repeated after the operation.
【００２８】また、本発明の応用例としては、基板の位
置にパターン検出器を設置して、原画であるレティクル
の所定間隔のマークを計測して、縮小倍率を調整するこ
とも、既述の縮小倍率誤差を補正する方法を縮小投影レ
ンズを介して逆さに考えれば、容易に類推できる。As an application example of the present invention, it is also possible to install a pattern detector at the position of a substrate, measure marks at predetermined intervals on a reticle as an original image, and adjust the reduction magnification. If the method of correcting the reduction magnification error is considered upside down via a reduction projection lens, it can be easily analogized.
【００２９】[0029]
【発明の効果】本発明によれば、投影露光光学系の距離
の変動や、任意の屈折率や厚さの媒体物が介在すること
等により生じる、基板上に縮小投影される原画パターン
の縮小倍率誤差を検出して、自動的に焦点位置を補正し
縮小倍率を補正することができるので、従来よりさらに
解像度を劣化されることなく、またパターンの高精度な
重ね合わせ精度を達成することにより高精度な半導体素
子を本発明の縮小投影露光方法により製造できることに
なる。According to the present invention, the reduction of the original image pattern which is reduced and projected on the substrate is caused by the fluctuation of the distance of the projection exposure optical system or the presence of a medium having an arbitrary refractive index or thickness. Since the magnification error can be detected and the focal position can be automatically corrected to correct the reduction magnification, the resolution is not degraded even more than before, and by achieving a highly accurate pattern overlay A highly accurate semiconductor device can be manufactured by the reduction projection exposure method of the present invention.
【図１】本発明の原理を説明するための説明図。FIG. 1 is an explanatory diagram for explaining the principle of the present invention.
【図２】本発明による縮小投影露光装置の実施例の概略
構成図である。FIG. 2 is a schematic configuration diagram of an embodiment of a reduction projection exposure apparatus according to the present invention.
【図３】縮小投影光学系の原理説明図である。FIG. 3 is a diagram illustrating the principle of a reduction projection optical system.
１，２１…コンデンサレンズ、２，２２，４２…レティ
クル、３，２３，４３…縮小レンズ、４，２４，４４…
基板、５，６，２５…パターン検出器、７，８…窓、
９，９′，９″，２９…パターン、３０…Ｚ移動台、３
１…ＸＹ移動台、３２…案内部材、３３…駆動モータ、
３４…差動コイル、３５，３６…演算回路、３７…検出
回路、３８…レンズ上下制御回路。1, 21 ... Condenser lens, 2, 22, 42 ... Reticle, 3, 23, 43 ... Reduction lens, 4, 24, 44 ...
Substrate, 5, 6, 25 ... pattern detector, 7, 8 ... window,
9, 9 ', 9 ", 29 ... Pattern, 30 ... Z moving base, 3
1: XY movable table, 32: guide member, 33: drive motor,
34: differential coil, 35, 36: arithmetic circuit, 37: detection circuit, 38: lens up / down control circuit.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 黒崎 利栄 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 寺澤 恒男 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 保坂 純男 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Riei Kurosaki 1-280, Higashi Koikeku, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd. (72) Tsuneo Terasawa 1-280, Higashi Koikeku, Kokubunji, Tokyo Hitachi Ltd. Central Research Laboratory (72) Inventor Sumio Hosaka 1-280, Higashi Koigokubo, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory
Claims (3)
装置のそれぞれの位置に装着する工程と、 上記基板のマ−クを上記縮小投影露光装置の縮小レンズ
を通して検出し、縮小投影倍率を補正する工程とを含む
ことを特徴とする投影露光方法。1. A step of mounting a substrate and an original image at respective positions of a reduction projection exposure apparatus having a predetermined magnification, and a mark of the substrate is detected through a reduction lens of the reduction projection exposure apparatus to obtain a reduction projection magnification. And a step of correcting the projection exposure method.
装置のそれぞれの位置に装着する工程と、 上記基板のマ−クと上記原画のマ−クとの合わせ誤差を
測定して縮小投影露光倍率を補正する工程とを含むこと
を特徴とする投影露光方法。2. A step of mounting a substrate and an original image at respective positions of a reduction projection exposure apparatus having a predetermined magnification, and measuring and reducing an alignment error between the mark of the substrate and the mark of the original image. And a step of correcting the projection exposure magnification.
装置のそれぞれの位置に装着する工程と、 上記所定の倍率の誤差を検出し、該所定の倍率を維持す
るように該誤差を補正する工程とを含むことを特徴とす
る投影露光方法。3. A step of mounting a substrate and an original image at respective positions of a reduction projection exposure apparatus having a predetermined magnification, and detecting an error of the predetermined magnification, and keeping the predetermined magnification by the error. A projection exposure method comprising the step of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8012513A JP2653356B2 (en) | 1996-01-29 | 1996-01-29 | Projection exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8012513A JP2653356B2 (en) | 1996-01-29 | 1996-01-29 | Projection exposure method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4054756A Division JPH0712019B2 (en) | 1992-03-13 | 1992-03-13 | Projection exposure method and projection exposure apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08241859A true JPH08241859A (en) | 1996-09-17 |
| JP2653356B2 JP2653356B2 (en) | 1997-09-17 |
Family
ID=11807438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8012513A Expired - Lifetime JP2653356B2 (en) | 1996-01-29 | 1996-01-29 | Projection exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2653356B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109240044A (en) * | 2018-10-10 | 2019-01-18 | 德淮半导体有限公司 | Exposure system and the method for reducing mask plate three-dismensional effect in exposure process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922587A (en) * | 1972-06-26 | 1974-02-28 | ||
| JPS5384278U (en) * | 1976-12-14 | 1978-07-12 | ||
| JPS53132270A (en) * | 1977-04-20 | 1978-11-17 | Thomson Csf | Optical device for projecting pattern |
| JPS5541739A (en) * | 1978-09-20 | 1980-03-24 | Hitachi Ltd | Micro-projection type mask alignment device |
| JPS56130707A (en) * | 1980-03-18 | 1981-10-13 | Canon Inc | Photo-printing device |
| JPS58108745A (en) * | 1981-12-23 | 1983-06-28 | Canon Inc | Erroneous transcription adjusting device |
-
1996
- 1996-01-29 JP JP8012513A patent/JP2653356B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922587A (en) * | 1972-06-26 | 1974-02-28 | ||
| JPS5384278U (en) * | 1976-12-14 | 1978-07-12 | ||
| JPS53132270A (en) * | 1977-04-20 | 1978-11-17 | Thomson Csf | Optical device for projecting pattern |
| JPS5541739A (en) * | 1978-09-20 | 1980-03-24 | Hitachi Ltd | Micro-projection type mask alignment device |
| JPS56130707A (en) * | 1980-03-18 | 1981-10-13 | Canon Inc | Photo-printing device |
| JPS58108745A (en) * | 1981-12-23 | 1983-06-28 | Canon Inc | Erroneous transcription adjusting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109240044A (en) * | 2018-10-10 | 2019-01-18 | 德淮半导体有限公司 | Exposure system and the method for reducing mask plate three-dismensional effect in exposure process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2653356B2 (en) | 1997-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6538740B1 (en) | Adjusting method for position detecting apparatus | |
| US5309197A (en) | Projection exposure apparatus | |
| US4506977A (en) | Transfer apparatus provided with an auto-focusing mechanism | |
| JP3387075B2 (en) | Scanning exposure method, exposure apparatus, and scanning exposure apparatus | |
| JP3308063B2 (en) | Projection exposure method and apparatus | |
| US6525817B1 (en) | Inspection method and apparatus for projection optical systems | |
| EP2466384A2 (en) | Plane position detecting apparatus, exposure apparatus and device manufacturing method | |
| TWI534558B (en) | Detection device, exposure apparatus, and device manufacturing method using same | |
| KR19980042558A (en) | Projection exposure apparatus and projection exposure method | |
| CN103309169A (en) | Detection apparatus, exposure apparatus, and method of manufacturing device | |
| JP2001035784A (en) | Device for detecting alignment of first member and second member and determining method and lithography apparatus | |
| US6124601A (en) | Position sensor having a reflective projecting system and device fabrication method using the sensor | |
| KR100308608B1 (en) | Alignment system and projection exposure apparatus | |
| US6169602B1 (en) | Inspection method and apparatus for projection optical systems | |
| US4941745A (en) | Projection aligner for fabricating semiconductor device having projection optics | |
| JP2653356B2 (en) | Projection exposure method | |
| JPH0328809B2 (en) | ||
| JPH1050600A (en) | Method and device for projection exposure | |
| JPH0574680A (en) | Projection exposing method | |
| US20050128455A1 (en) | Exposure apparatus, alignment method and device manufacturing method | |
| JPS60177625A (en) | Projection exposure device | |
| JP5622126B2 (en) | Surface position detection apparatus, exposure apparatus, and device manufacturing method | |
| US20230176489A1 (en) | Detecting apparatus, substrate processing apparatus, and article manufacturing method | |
| JPH01286418A (en) | Projection aligner | |
| JPS62200724A (en) | Projection and exposure device |