JPH08217558A - Ceramic bonding device - Google Patents
Ceramic bonding deviceInfo
- Publication number
- JPH08217558A JPH08217558A JP2639295A JP2639295A JPH08217558A JP H08217558 A JPH08217558 A JP H08217558A JP 2639295 A JP2639295 A JP 2639295A JP 2639295 A JP2639295 A JP 2639295A JP H08217558 A JPH08217558 A JP H08217558A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- materials
- ceramic
- resonator
- supply means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックス接合装置
に関する。例えば、セラミックスとセラミックスの接合
手段の他、セラミックスとガラス、金属等との接合手段
としても応用できる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramics joining apparatus. For example, it can be applied not only as a means for joining ceramics to ceramics but also as a means for joining ceramics to glass or metal.
【０００２】[0002]
【従来の技術】従来のセラミックス接合装置の一例を図
３に示す。同図に示すように、二本の棒状セラミックス
材料０７，０７を向かい合わせて電気加熱炉０１１内に
挿入すると共にこれらセラミックス材料０７，０７の端
面間にガラス等のインサート材０１０を挟んで、セラミ
ック材料０７，０７を加圧手段０１２，０１２により両
側から加圧している。2. Description of the Related Art An example of a conventional ceramics joining apparatus is shown in FIG. As shown in the figure, two rod-shaped ceramic materials 07 and 07 are inserted into the electric heating furnace 011 so that they face each other, and an insert material 010 such as glass is sandwiched between the end surfaces of these ceramic materials 07 and 07 to form a ceramic material. The materials 07 and 07 are pressed from both sides by pressing means 012 and 012.
【０００３】従って、電気加熱炉０１１により、セラミ
ックス材料０７，０７の接合部付近を加熱し、インサー
ト材０１０の軟化点より僅かに高い温度に保った後に冷
却することにより、セラミック材料０７，０７の接合が
得られる。尚、ガラス等のインサート材０１０の軟化点
は、セラミックス材料０７の融点より低い。Therefore, the electric heating furnace 011 heats the vicinity of the joint portion of the ceramic materials 07 and 07, maintains the temperature slightly higher than the softening point of the insert material 010, and then cools it, whereby the ceramic materials 07 and 07 are cooled. A bond is obtained. The softening point of the insert material 010 such as glass is lower than the melting point of the ceramic material 07.
【０００４】[0004]
【発明が解決しようとする課題】上述した図３に示す従
来のセラミックス接合装置においては、電気加熱炉０１
１を加熱手段として利用しているため、セラミックス材
料０７の全体或いは相当の部分を加熱していた。In the conventional ceramics joining apparatus shown in FIG. 3, the electric heating furnace 01 is used.
Since 1 is used as the heating means, the whole or a considerable portion of the ceramic material 07 is heated.
【０００５】そのため、本来加熱する必要のない、セラ
ミックス材料０７の界面以外の部分も加熱しており、ま
た、電気加熱炉０１１も大きな熱容量を持つため、材料
の接合に必要な温度まで上昇させるために、時間が長
くかかり、エネルギー効率も悪いという欠点があっ
た。Therefore, the portion other than the interface of the ceramic material 07, which originally does not need to be heated, is also heated, and the electric heating furnace 011 also has a large heat capacity, so that the temperature required for joining the materials is raised. However, it has a drawback that it takes a long time and energy efficiency is low.
【０００６】本発明は、上記従来技術に鑑みてなされた
ものであり、効率良く短時間に加熱して、セラミックス
を接合できる装置を提供することを目的とする。The present invention has been made in view of the above-mentioned prior art, and an object of the present invention is to provide an apparatus capable of efficiently heating in a short time to bond ceramics.
【０００７】[0007]
【課題を解決するための手段】斯かる目的を達成する本
発明の構成はマイクロ波共振器内に少なくとも一方がセ
ラミックス材料である二つの被接合材を挿入すると共に
これらの被接合材の接合界面に僅かな隙間を形成する一
方、該隙間に接合界面と垂直な方向の磁界を発生させる
マイクロ波を供給するマイクロ波供給手段を設け、ま
た、プラズマの発生に適する雰囲気ガスを前記マイクロ
波共振器内へ供給する雰囲気ガス供給手段を設けたこと
を特徴とする。The structure of the present invention which achieves such an object is to insert two members to be bonded, at least one of which is a ceramic material, into the microwave resonator and to bond the bonding interface between these members to be bonded. A microwave supply means for supplying a microwave for generating a magnetic field in a direction perpendicular to the bonding interface is provided in the gap while forming a slight gap in the gap, and an atmosphere gas suitable for generating plasma is supplied to the microwave resonator. It is characterized in that an atmosphere gas supply means for supplying the inside is provided.
【０００８】更に、前記接合界面の隙間には、発生する
プラズマにより溶解するインサート材を介装すること、
凹凸を以て形成されること、前記雰囲気ガス供給手段
は、水素、酸素、不活性ガス及びこれら二種類以上の混
合ガスを供給すること、前記マイクロ波供給手段は、少
なくとも２系統以上設けられること、前記マイクロ波供
給手段は、複数の共振モードのマイクロ波を励振するこ
とを特徴とする。Further, an insert material which is melted by the generated plasma is interposed in the gap at the bonding interface,
Formed with irregularities, the atmosphere gas supply means supplies hydrogen, oxygen, an inert gas and a mixed gas of two or more kinds of these, the microwave supply means is provided with at least two systems, The microwave supply means is characterized by exciting microwaves in a plurality of resonance modes.
【０００９】[0009]
【作用】被接合材の接合界面の隙間に電界集中が起こり
高電界となるために、接合界面部分に雰囲気ガスによる
プラズマが点灯し、プラズマはマイクロ波のエネルギー
を効率よく吸収するため、被接合材が容易に接合される
ことになる。[Function] The electric field is concentrated in the gap between the joining interfaces of the materials to be joined and a high electric field is generated. Therefore, plasma generated by the atmospheric gas is lit at the joining interface portion, and the plasma efficiently absorbs microwave energy. The materials will be easily joined.
【００１０】[0010]
【実施例】以下、本発明について、図面に示す実施例を
参照して詳細に説明する。図１（ａ）に本発明の一実施
例を示す。本実施例のセラミックス接合装置は、マイク
ロ波発振器１、導波管２、整合器３、マイクロ波共振器
４、加圧制御手段５、雰囲気ガス供給手段６、共振周波
数同調手段８よりなる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the embodiments shown in the drawings. FIG. 1A shows an embodiment of the present invention. The ceramics bonding apparatus of this embodiment comprises a microwave oscillator 1, a waveguide 2, a matching device 3, a microwave resonator 4, a pressurizing control means 5, an atmosphere gas supply means 6, and a resonance frequency tuning means 8.
【００１１】同図に示すように、マイクロ波共振器４内
には、雰囲気ガス供給手段６を通じて、水素、酸素、不
活性ガス及びこれら二種類以上の混合ガスが供給され、
マイクロ波共振器４内部の雰囲気はプラズマが点灯し易
い組成、圧力に調整されている。また、マイクロ波共振
器４内には、マイクロ波発振器１から導波管２を通じて
マイクロ波のパワーが伝送されている。導波管２には、
マイクロ波パワーを全てマイクロ波共振器４に投入させ
るように、マイクロ波共振器４の負荷を整合させる整合
器３が介装されている。As shown in FIG. 1, hydrogen, oxygen, an inert gas and a mixed gas of two or more kinds of these gases are supplied into the microwave resonator 4 through the atmosphere gas supply means 6.
The atmosphere inside the microwave resonator 4 is adjusted to have a composition and a pressure at which plasma is easily lit. In addition, microwave power is transmitted from the microwave oscillator 1 to the microwave resonator 4 through the waveguide 2. In the waveguide 2,
A matching unit 3 for matching the load of the microwave resonator 4 is interposed so that all the microwave power is input to the microwave resonator 4.
【００１２】マイクロ波共器４としては、本実施例では
円筒型のマイクロ波共振器を用いた。マイクロ波共振器
４の共振モードは、電界が接合界面に垂直であるものと
する。マイクロ波共振器４内には、内部の電磁界エネル
ギーが外部に漏れ出すのを防ぐ金属円筒９が設けられて
いる。As the microwave correlator 4, a cylindrical microwave resonator is used in this embodiment. The resonance mode of the microwave resonator 4 is such that the electric field is perpendicular to the junction interface. Inside the microwave resonator 4, there is provided a metal cylinder 9 which prevents the internal electromagnetic field energy from leaking to the outside.
【００１３】マイクロ波共振器４には、二本の棒状のセ
ラミックス材料７が挿入され、中心部で突き合わされて
いる。図１（ａ）中において二点鎖線で囲むＡ部の拡大
図を同図（ｂ）に示すように、セラミックス材料７の表
面にはインサート材１０が凹凸をもって施工されてい
る。そのため、接合前の状態では、セラミックス材料７
の接合界面には僅かな隙間が存在する。マイクロ波共振
器４の共振周波数は、セラミックス材料７を挿入した状
態でマイクロ波共振器４が共振状態となるように調整さ
れている。共振周波数の調整は、マイクロ波発振器１の
発振周波数を変化させても良く、共振周波数同調手段８
を用いても良い。Two rod-shaped ceramic materials 7 are inserted into the microwave resonator 4 and are abutted at the center. As shown in FIG. 1B, which is an enlarged view of a portion A surrounded by a chain double-dashed line in FIG. 1A, an insert material 10 is unevenly formed on the surface of the ceramic material 7. Therefore, in the state before joining, the ceramic material 7
There is a slight gap at the bonding interface of. The resonance frequency of the microwave resonator 4 is adjusted so that the microwave resonator 4 is in a resonance state with the ceramic material 7 inserted. The resonance frequency may be adjusted by changing the oscillation frequency of the microwave oscillator 1, and the resonance frequency tuning means 8
May be used.
【００１４】ここで、マイクロ波の周波数がマイクロ波
共振器４のＴＭ010に同調しているとすると、セラミッ
クス材料７近辺の電界分布はセラミックス材料７に並
行、即ち、接合界面に垂直である。このとき、接合界面
の電解強度と周囲の電解強度の比率は以下の式で近似的
に表すことができる。 Ｅa（Ｘ−Ｄ）＋Ｅ0Ｄ＝Ｖ …（１）Assuming that the microwave frequency is tuned to TM 010 of the microwave resonator 4, the electric field distribution near the ceramic material 7 is parallel to the ceramic material 7, that is, perpendicular to the bonding interface. At this time, the ratio of the electrolytic strength at the bonding interface to the electrolytic strength at the periphery can be approximately represented by the following formula. E a (X−D) + E 0 D = V (1)
【００１５】但し、Ｘは共振器の高さ、Ｅaはセラミッ
クス材料７の内部電解強度、Ｄは隙間の間隔、Ｅ0は隙
間部分の電解強度、Ｖはマイクロ波共振器４中心近くの
上下壁面の電位差である。Here, X is the height of the resonator, E a is the internal electrolytic strength of the ceramic material 7, D is the spacing of the gap, E 0 is the electrolytic strength of the gap, and V is the vertical direction near the center of the microwave resonator 4. It is the potential difference on the wall surface.
【００１６】また、マイクロ波共振器４中心近くの電解
をＥとすると、Ｅ＝Ｖ／Ｘで定義される。更に、セラミ
ックス材料７の誘電率がεaのとき、電束密度の法線成
分が連続であることから、εaＥa＝ε0Ｅ0（ε0は真空
の誘電率）の関係が成立する。この式を利用して（１）
式を変形し、Ｘ≫Ｄの近似を行うと、次式の関係返られ
る。 Ｅ0≒Ｅ（εa／ε0） …（２）Further, when the electrolysis near the center of the microwave resonator 4 is E, it is defined by E = V / X. Furthermore, when the permittivity of the ceramic material 7 is ε a , the normal component of the electric flux density is continuous, so the relation of ε a E a = ε 0 E 0 (ε 0 is the permittivity of vacuum) is established. To do. Using this formula (1)
When the equation is transformed and the approximation of X >> D is performed, the relation of the following equation is returned. E 0 ≈E (ε a / ε 0 ) ... (2)
【００１７】この関係式は、隙間の電解強度が周囲に比
べて、（εa／ε0）倍に増幅されることを意味してい
る。一般に、セラミックス材料７の比誘電率は、１より
相当に大きいので、セラミックス材料７の隙間の部分に
電界集中現象が表れ、容易に高電界が得られる。This relational expression means that the electrolytic strength of the gap is amplified by (ε a / ε 0 ) times that of the surrounding area. Generally, since the relative permittivity of the ceramic material 7 is considerably larger than 1, an electric field concentration phenomenon appears in the gap portion of the ceramic material 7, and a high electric field can be easily obtained.
【００１８】このため、接合界面部分に雰囲気ガスによ
るプラズマが点灯し、プラズマはマイクロ波のエネルギ
ーを効率良く吸収するので、投入されたエネルギーは殆
どプラズマに吸収されることになる。このように接合界
面部分に発生したプラズマはインサート材１０を溶解さ
せ、その後に加圧制御手段５によって二本のセラミック
ス材料７を加圧すればセラミックス材料７は接合する。For this reason, plasma generated by the atmospheric gas is lit at the bonding interface portion, and the plasma efficiently absorbs the microwave energy, so that the input energy is almost absorbed by the plasma. The plasma thus generated at the bonding interface portion melts the insert material 10, and then the two ceramic materials 7 are pressed by the pressure control means 5 to bond the ceramic materials 7.
【００１９】尚、本実施例では円筒型のマイクロ波共振
器４を用いたが、必ずしも円筒形である必要はない。ま
た、インサート材１０としては凹凸を施したものに限ら
ず、粉末の材料を使用しても同様の効果を得られる。In this embodiment, the cylindrical microwave resonator 4 is used, but it does not have to be cylindrical. Further, the insert material 10 is not limited to the one having unevenness, and the same effect can be obtained by using a powder material.
【００２０】本発明の他の実施例を図２（ａ）に示す。
本実施例は、板状のセラミックス材料７に適するよう
に、２系統のマイクロ波供給手段１１０，１１０′を設
けたものである。即ち、マイクロ波共振器４には、その
左方からマイクロ波発生器１、導波管２及び整合器３か
らなるのマイクロ波供給手段１１０が接続すると共にそ
の右方からマイクロ波供給手段１１０′が接続してい
る。Another embodiment of the present invention is shown in FIG.
In this embodiment, two systems of microwave supply means 110 and 110 'are provided so as to be suitable for the plate-shaped ceramic material 7. That is, the microwave resonator 4 is connected to the microwave supply means 110 including the microwave generator 1, the waveguide 2 and the matching device 3 from the left side thereof, and the microwave supply means 110 ′ is connected to the right side thereof. Are connected.
【００２１】マイクロ波供給手段１１０は、ＴＭ010モ
ードのマイクロ波をマイクロ波共振器４へ供給する一
方、マイクロ波供給手段１１０′は、ＴＭ020モードの
マイクロ波をマイクロ波共振器４へ供給する。ＴＭ010
モードの電界強度は、図２（ｂ）に示すように、共振器
の中央ほど強く、周辺部へ行くに従って減衰するのに対
し、ＴＭ020モードの電界強度は、図２（ｃ）に示すよ
うに三つのピークを持つ波形を持つ。The microwave supplying means 110 supplies the microwave of TM 010 mode to the microwave resonator 4, while the microwave supplying means 110 ′ supplies the microwave of TM 020 mode to the microwave resonator 4. . TM 010
As shown in FIG. 2 (b), the electric field strength of the mode is stronger toward the center of the resonator and attenuates toward the peripheral portion, whereas the electric field strength of the TM 020 mode is as shown in FIG. 2 (c). Has a waveform with three peaks.
【００２２】従って、二つのモードの重畳により、マイ
クロ波共振器４内の周辺部の電界強度を増強できるた
め、セラミック材料８がマイクロ波共振器４の相当広い
部分を占めるときにも、セラミック材料８の全面に渡り
均一で充分な電界強度を得ることができる。また、本実
施例では加圧制御手段５は金属製であるため、マイクロ
波共振器４の上下の間隔が狭くなったと同様な効果を与
えるため、一層の高電界が得られ、一層容易にプラズマ
を点灯させることががきる。Therefore, the electric field strength in the peripheral portion of the microwave resonator 4 can be enhanced by the superposition of the two modes. Therefore, even when the ceramic material 8 occupies a considerably large portion of the microwave resonator 4, the ceramic material 8 has a large area. A uniform and sufficient electric field strength can be obtained over the entire surface of No. 8. Further, in this embodiment, since the pressurizing control means 5 is made of metal, the same effect as that when the upper and lower intervals of the microwave resonator 4 is narrowed is obtained, so that a higher electric field can be obtained and the plasma can be more easily obtained. Can be turned on.
【００２３】尚、マイクロ波はいずれのモードにおいて
も電界の方向は接合界面に対して垂直であるため、前述
した実施例と同様に接合界面を選択的に加熱し、接合す
ることが可能である。また、マイクロ波供給手段１１
０′により励振するモードは、ＴＭ020モードに限らな
い。Since the electric field direction of the microwave is perpendicular to the bonding interface in any mode, the bonding interface can be selectively heated and bonded in the same manner as in the above-described embodiments. . Also, the microwave supply means 11
The mode excited by 0'is not limited to the TM 020 mode.
【００２４】[0024]
【発明の効果】以上、実施例に基づいて具体的に説明し
たように、本発明では、電界集中により接合界面近傍に
プラズマを点灯させるため、セラミックス材料等ををよ
り高速に、少ないエネルギーで接合することができる。
また、セラミックス材料よりも軟化点の低いインサート
材を接合界面に介装することにより、一層効率的に接合
することが可能となる。特に、複数の共振モードをマイ
クロ波共振器に印加することにより、電界強度を均一に
増強することができるため、平面状のセラミックス材料
等の接合にも適する。As described above in detail with reference to the embodiments, in the present invention, since plasma is lit near the bonding interface due to electric field concentration, ceramic materials are bonded at higher speed with less energy. can do.
Also, by inserting an insert material having a lower softening point than the ceramic material at the bonding interface, it becomes possible to bond more efficiently. In particular, by applying a plurality of resonance modes to the microwave resonator, the electric field strength can be uniformly enhanced, and therefore, it is suitable for joining flat ceramic materials and the like.
【図１】本発明の一実施例に係るセラミックス接合装置
の構成図である。FIG. 1 is a configuration diagram of a ceramics bonding apparatus according to an embodiment of the present invention.
【図２】本発明の他の実施例に係るセラミックス接合装
置の構成図である。FIG. 2 is a configuration diagram of a ceramics bonding apparatus according to another embodiment of the present invention.
【図３】従来のセラミックス接合装置の構成図である。FIG. 3 is a configuration diagram of a conventional ceramics bonding apparatus.
１ マイクロ波発振器 ２ 導波管 ３ 整合器 ４ マイクロ波共振器 ５ 加圧制御手段 ６ 雰囲気ガス供給手段 ７ セラミックス材料 ８ 共振周波数同調手段 ９ 金属円筒 １０ インサート材 １１０，１１０′ マイクロ波供給手段 DESCRIPTION OF SYMBOLS 1 Microwave oscillator 2 Waveguide 3 Matching device 4 Microwave resonator 5 Pressurizing control means 6 Atmosphere gas supply means 7 Ceramics material 8 Resonance frequency tuning means 9 Metal cylinder 10 Insert material 110, 110 'Microwave supply means
【手続補正書】[Procedure amendment]
【提出日】平成７年４月１４日[Submission date] April 14, 1995
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項１[Name of item to be corrected] Claim 1
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００７[Correction target item name] 0007
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００７】[0007]
【課題を解決するための手段】斯かる目的を達成する本
発明の構成はマイクロ波共振器内に少なくとも一方がセ
ラミックス材料である二つの被接合材を挿入すると共に
これらの被接合材の接合界面に僅かな隙間を形成する一
方、該隙間に接合界面と垂直な方向の電界を発生させる
マイクロ波を供給するマイクロ波供給手段を設け、ま
た、プラズマの発生に適する雰囲気ガスを前記マイクロ
波共振器内へ供給する雰囲気ガス供給手段を設けたこと
を特徴とする。The structure of the present invention which achieves such an object is to insert two members to be bonded, at least one of which is a ceramic material, into the microwave resonator and to bond the bonding interface between these members to be bonded. A microwave supply means for supplying a microwave for generating an electric field in a direction perpendicular to the bonding interface is provided in the gap while forming a slight gap in the gap, and an atmosphere gas suitable for generating plasma is supplied to the microwave resonator. It is characterized in that an atmosphere gas supply means for supplying the inside is provided.
【手続補正３】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１６[Correction target item name] 0016
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１６】また、マイクロ波共振器４中心近くの電解
をＥとすると、Ｅ＝Ｖ／Ｘで定義される。更に、セラミ
ックス材料７の誘電率がεaのとき、電束密度の法線成
分が連続であることから、εaＥa＝ε0Ｅ0（ε0は真空
の誘電率）の関係が成立する。この式を利用して（１）
式を変形し、Ｘ≫Ｄの近似を行うと、次式の関係が得ら
れる。 Ｅ0≒Ｅ（εa／ε0） …（２）Further, when the electrolysis near the center of the microwave resonator 4 is E, it is defined by E = V / X. Furthermore, when the permittivity of the ceramic material 7 is ε a , the normal component of the electric flux density is continuous, so the relation of ε a E a = ε 0 E 0 (ε 0 is the permittivity of vacuum) is established. To do. Using this formula (1)
When the equation is transformed and the approximation of X >> D is performed, the relation of the following equation is obtained . E 0 ≈E (ε a / ε 0 ) ... (2)
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２４[Name of item to be corrected] 0024
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００２４】[0024]
【発明の効果】以上、実施例に基づいて具体的に説明し
たように、本発明では、電界集中により接合界面近傍に
プラズマを点灯させるため、セラミックス材料等をより
高速に、少ないエネルギーで接合することができる。ま
た、セラミックス材料よりも軟化点の低いインサート材
を接合界面に介装することにより、一層効率的に接合す
ることが可能となる。特に、複数の共振モードをマイク
ロ波共振器に印加することにより、電界強度を均一に増
強することができるため、平面状のセラミックス材料等
の接合にも適する。Effect of the Invention] Thus, as described in detail based on examples, the present invention, for lighting the plasma to the bonding interface area by the electric field concentration, the ceramic material or the like at a higher speed, joined with less energy be able to. Also, by inserting an insert material having a lower softening point than the ceramic material at the bonding interface, it becomes possible to bond more efficiently. In particular, by applying a plurality of resonance modes to the microwave resonator, the electric field strength can be uniformly enhanced, and therefore, it is suitable for joining flat ceramic materials and the like.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 平松 恭二 兵庫県神戸市兵庫区和田崎町一丁目１番１ 号 三菱重工業株式会社神戸造船所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kyoji Hiramatsu 1-1-1, Wadazaki-cho, Hyogo-ku, Kobe-shi, Hyogo Mitsubishi Heavy Industries Ltd. Kobe Shipyard
Claims (6)
セラミックス材料である二つの被接合材を挿入すると共
にこれらの被接合材の接合界面に僅かな隙間を形成する
一方、該隙間に接合界面と垂直な方向の磁界を発生させ
るマイクロ波を供給するマイクロ波供給手段を設け、ま
た、プラズマの発生に適する雰囲気ガスを前記マイクロ
波共振器内へ供給する雰囲気ガス供給手段を設けたこと
を特徴とするセラミックス接合装置。1. A microwave resonator is provided with two members to be joined, at least one of which is a ceramic material, and a slight gap is formed at a joining interface between these members to be joined, and a joining interface is formed in the gap. A microwave supply means for supplying a microwave for generating a magnetic field in a vertical direction, and an atmosphere gas supply means for supplying an atmosphere gas suitable for plasma generation into the microwave resonator. Ceramic bonding equipment.
ズマにより溶解するインサート材を介装することを特徴
とする請求項１記載のセラミックス接合装置。2. The ceramics bonding apparatus according to claim 1, wherein an insert material that is melted by generated plasma is interposed in the gap at the bonding interface.
れることを特徴とする請求項２記載のセラミックス接合
装置。3. The ceramic bonding apparatus according to claim 2, wherein the insert material is formed with irregularities.
素、不活性ガス及びこれら二種類以上の混合ガスを供給
することを特徴とする請求項１〜３記載のセラミックス
接合装置。4. The ceramic bonding apparatus according to claim 1, wherein the atmosphere gas supply means supplies hydrogen, oxygen, an inert gas, and a mixed gas of two or more kinds of these.
２系統以上設けられることを特徴とする請求項１〜４記
載のセラミックス接合装置。5. The ceramic joining apparatus according to claim 1, wherein the microwave supply means is provided in at least two systems.
モードのマイクロ波を励振することを特徴とする請求項
５記載のセラミックス接合装置。6. The ceramic bonding apparatus according to claim 5, wherein the microwave supply means excites microwaves in a plurality of resonance modes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2639295A JPH08217558A (en) | 1995-02-15 | 1995-02-15 | Ceramic bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2639295A JPH08217558A (en) | 1995-02-15 | 1995-02-15 | Ceramic bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08217558A true JPH08217558A (en) | 1996-08-27 |
Family
ID=12192279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2639295A Withdrawn JPH08217558A (en) | 1995-02-15 | 1995-02-15 | Ceramic bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08217558A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003096382A2 (en) * | 2002-05-08 | 2003-11-20 | Dana Corporation | Methods and apparatus for plasma processing control |
| US7022198B2 (en) * | 2003-03-07 | 2006-04-04 | The United States Of America As Represented By The Secretary Of The Navy | Microwave assisted reactive brazing of ceramic materials |
| CN114736029A (en) * | 2022-04-09 | 2022-07-12 | 上海财盈半导体股份有限公司 | Microwave focusing method ceramic welding device and method |
-
1995
- 1995-02-15 JP JP2639295A patent/JPH08217558A/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003096382A2 (en) * | 2002-05-08 | 2003-11-20 | Dana Corporation | Methods and apparatus for plasma processing control |
| WO2003096773A1 (en) * | 2002-05-08 | 2003-11-20 | Dana Corporation | Plasma-assisted joining |
| WO2003096383A2 (en) * | 2002-05-08 | 2003-11-20 | Dana Corporation | Cavity shapes for plasma-assisted processing |
| WO2003096382A3 (en) * | 2002-05-08 | 2004-07-15 | Dana Corp | Methods and apparatus for plasma processing control |
| WO2003096383A3 (en) * | 2002-05-08 | 2004-07-22 | Dana Corp | Cavity shapes for plasma-assisted processing |
| US7022198B2 (en) * | 2003-03-07 | 2006-04-04 | The United States Of America As Represented By The Secretary Of The Navy | Microwave assisted reactive brazing of ceramic materials |
| CN114736029A (en) * | 2022-04-09 | 2022-07-12 | 上海财盈半导体股份有限公司 | Microwave focusing method ceramic welding device and method |
| CN114736029B (en) * | 2022-04-09 | 2024-04-12 | 上海财盈半导体股份有限公司 | Ceramic welding device and method by microwave focusing method |
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