JPH08203034A - Magnetoresistance type magnetic head - Google Patents
Magnetoresistance type magnetic headInfo
- Publication number
- JPH08203034A JPH08203034A JP1264595A JP1264595A JPH08203034A JP H08203034 A JPH08203034 A JP H08203034A JP 1264595 A JP1264595 A JP 1264595A JP 1264595 A JP1264595 A JP 1264595A JP H08203034 A JPH08203034 A JP H08203034A
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- Prior art keywords
- thin film
- film
- soft magnetic
- magnetic thin
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗効果型磁気ヘッ
ドに係り、特に磁気ディスク装置や磁気テープ装置にお
いて情報の検出に用いられる磁気抵抗効果型磁気ヘッド
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect magnetic head, and more particularly to a magnetoresistive effect magnetic head used for detecting information in a magnetic disk device or a magnetic tape device.
【０００２】[0002]
【従来の技術】磁気抵抗効果型磁気ヘッドは、磁界の変
化を電気抵抗の変化に変換する磁束応答型の磁気抵抗素
子を使用して信号検出を行う高出力の再生専用ヘッドで
あり、近年の磁気記録媒体の高記録密度化に伴って高記
録密度磁気ディスク装置などに使用されるようになっ
た。2. Description of the Related Art A magnetoresistive effect magnetic head is a high-output read-only head that detects a signal using a magnetic flux response type magnetoresistive element that converts a change in magnetic field into a change in electric resistance. With the increase in recording density of magnetic recording media, it has come to be used in high recording density magnetic disk devices and the like.
【０００３】この磁気抵抗効果型磁気ヘッドは、一般に
は磁気抵抗素子として軟磁性体、代表的にはパーマロイ
の薄膜を用いて形成される。図５は従来の磁気抵抗効果
型磁気ヘッドの一例の概略斜視図を示す。図５に示すよ
うに、情報が矢印で模式的に示す磁化の方向の変化とし
て記録された磁気記録媒体７から媒体磁界Ａに応じた再
生信号を発生させるためには、磁気抵抗効果型磁気ヘッ
ドの磁気抵抗素子膜２の磁化の向きをＢで示すように表
面に対して４５度傾いた状態にさせる横バイアス磁界を
設ける必要がある。This magnetoresistive head is generally formed by using a soft magnetic material, typically a permalloy thin film, as a magnetoresistive element. FIG. 5 shows a schematic perspective view of an example of a conventional magnetoresistive effect magnetic head. As shown in FIG. 5, in order to generate a reproduction signal according to the medium magnetic field A from the magnetic recording medium 7 in which information is recorded as a change in the direction of magnetization schematically shown by an arrow, a magnetoresistive effect magnetic head is used. It is necessary to provide a lateral bias magnetic field that causes the magnetization direction of the magnetoresistive element film 2 to be inclined by 45 degrees with respect to the surface as indicated by B.
【０００４】そのための手段として、従来の磁気抵抗効
果型磁気ヘッドでは磁気抵抗素子膜１を非磁性薄膜２を
介して、容易に飽和し易い第２の軟磁性薄膜３を形成
し、磁気抵抗素子膜１にＣで示す方向に流れるセンス電
流による磁界によって第２の軟磁性薄膜３をＤで示す方
向に磁化することにより、その磁化状態が磁気抵抗素子
膜１に横バイアス磁界として働き再生信号を得る構成と
されている。As a means therefor, in a conventional magnetoresistive effect magnetic head, a magnetoresistive element film 1 is formed through a nonmagnetic thin film 2 to form a second soft magnetic thin film 3 which is easily saturated, and the magnetoresistive element is formed. By magnetizing the second soft magnetic thin film 3 in the direction indicated by D by the magnetic field generated by the sense current flowing in the film 1 in the direction indicated by C, the magnetization state acts on the magnetoresistive element film 1 as a lateral bias magnetic field and a reproduction signal is generated. It is configured to get.
【０００５】図６（Ａ）は第２の軟磁性薄膜のバイアス
による磁気抵抗効果型磁気ヘッドの要部断面図を示す。
この従来の磁気抵抗効果型磁気ヘッドは、第２の軟磁性
薄膜３の上に非磁性薄膜２とパーマロイ薄膜による磁気
抵抗素子膜１を順次に積層した３層薄膜を形成し、更に
その上にトラック幅を隔ててなる電極パターン４が形成
された構成である。FIG. 6A is a sectional view of the essential part of a magnetoresistive effect magnetic head based on a bias of a second soft magnetic thin film.
In this conventional magnetoresistive effect magnetic head, a non-magnetic thin film 2 and a magnetoresistive element film 1 of a permalloy thin film are sequentially laminated on a second soft magnetic thin film 3 to form a three-layer thin film, and further thereon. This is a configuration in which the electrode pattern 4 is formed with the track width separated.
【０００６】しかしながら、この従来の磁気抵抗効果型
磁気ヘッドでは、磁気抵抗素子膜１を構成するパーマロ
イなどの軟磁性薄膜は容易に磁区を形成する傾向があ
り、磁区が一旦形成されると磁気記録媒体からの磁界に
より磁区境界の磁壁が移動する時にバルクハウゼンノイ
ズを発生させる難点がある。However, in this conventional magnetoresistive effect magnetic head, the soft magnetic thin film such as permalloy forming the magnetoresistive element film 1 tends to easily form magnetic domains, and once the magnetic domains are formed, magnetic recording is performed. There is a problem in that Barkhausen noise is generated when the magnetic domain boundaries move by the magnetic field from the medium.
【０００７】そのため、図６（Ｂ）の要部断面図に示す
ように、磁気抵抗素子膜１のトラック領域以外の部分に
磁気抵抗素子膜１の磁化を安定化させるためにＦｅＭｎ
などの反強磁性薄膜パターン５を形成した上にトラック
幅を隔てて電極パターン４を形成した構造の磁気抵抗効
果型磁気ヘッドが開発された。Therefore, as shown in the sectional view of the main part of FIG. 6B, FeMn is used to stabilize the magnetization of the magnetoresistive element film 1 in a portion other than the track region of the magnetoresistive element film 1.
A magnetoresistive head having a structure in which an electrode pattern 4 is formed with a track width formed on the antiferromagnetic thin film pattern 5 has been developed.
【０００８】この磁気抵抗効果型磁気ヘッドによれば、
反強磁性薄膜パターン５の磁化の向きを磁気抵抗素子膜
１の長手方向に揃えることにより、反強磁性薄膜パター
ン５に接している磁気抵抗素子膜１の磁化が磁気抵抗素
子膜１の長手方向に安定化されるため、磁区の発生が抑
制される。According to this magnetoresistive effect magnetic head,
By aligning the magnetization direction of the antiferromagnetic thin film pattern 5 in the longitudinal direction of the magnetoresistive element film 1, the magnetization of the magnetoresistive element film 1 in contact with the antiferromagnetic thin film pattern 5 is changed in the longitudinal direction of the magnetoresistive element film 1. As a result, the generation of magnetic domains is suppressed.
【０００９】しかし、この図６（Ｂ）に示した磁気抵抗
効果型磁気ヘッドは、ある程度バルクハウゼンノイズの
発生を抑制できるが、まだ完全ではなかった。これは、
磁気抵抗素子膜１と同様に、第２の軟磁性薄膜３も軟磁
性薄膜であるので、第２の軟磁性薄膜３も磁化が発生し
易いためである。一旦、第２の軟磁性薄膜３に磁区が発
生すると、磁気記録媒体からの磁界により磁壁移動が生
じ、磁気抵抗素子膜１のバイアス効果の急激な変化を起
こし、これがノイズとなる可能性があるからである。そ
の上、反強磁性薄膜パターン５と電極パターン４の目合
せ誤差のためにオフトラック特性が不良なヘッドか多
く、生産歩留りに問題があった。However, although the magnetoresistive head shown in FIG. 6B can suppress Barkhausen noise to some extent, it has not been completed yet. this is,
This is because, like the magnetoresistive element film 1, the second soft magnetic thin film 3 is also a soft magnetic thin film, so that the second soft magnetic thin film 3 is also easily magnetized. Once a magnetic domain is generated in the second soft magnetic thin film 3, a magnetic field from the magnetic recording medium causes a domain wall movement, causing a rapid change in the bias effect of the magnetoresistive element film 1, which may cause noise. Because. In addition, there are many heads with poor off-track characteristics due to the alignment error between the antiferromagnetic thin film pattern 5 and the electrode pattern 4, which causes a problem in production yield.
【００１０】このような問題を解決するために、従来、
図７に示す断面図の磁気抵抗効果型磁気ヘッドが開発さ
れた。この従来の磁気抵抗効果型磁気ヘッドは、図７に
示すように、磁気抵抗素子膜１の上に非磁性薄膜２及び
第２の軟磁性薄膜３を順次に積層した３層膜パターンの
両側に、ハード磁性薄膜パターン６を設け、そのハード
磁性薄膜パターン６上にトラック幅を隔てて電極パター
ン４を形成した構造である。In order to solve such a problem, conventionally,
A magnetoresistive head having the cross-sectional view shown in FIG. 7 has been developed. As shown in FIG. 7, this conventional magnetoresistive effect magnetic head has a three-layer film pattern in which a nonmagnetic thin film 2 and a second soft magnetic thin film 3 are sequentially laminated on a magnetoresistive element film 1 on both sides. The hard magnetic thin film pattern 6 is provided, and the electrode pattern 4 is formed on the hard magnetic thin film pattern 6 with a track width.
【００１１】この従来の磁気抵抗効果型磁気ヘッドによ
れば、ハード磁性薄膜パターン６が磁気抵抗素子膜１及
び第２の軟磁性薄膜３と磁気的に結合しているため、磁
気抵抗素子膜１及び第２の軟磁性薄膜３が共に安定化さ
れる。すなわち、この従来の磁気抵抗効果型磁気ヘッド
では、ハード磁性薄膜パターン６の磁化の向きを磁気抵
抗素子膜１の長手方向に揃えることにより、ハード磁性
薄膜パターン６が磁気抵抗素子膜１及び第２の軟磁性薄
膜３と磁気的に結合されるため、磁気抵抗素子膜１及び
第２の軟磁性薄膜３の磁化が安定化される。According to this conventional magnetoresistive head, since the hard magnetic thin film pattern 6 is magnetically coupled to the magnetoresistive element film 1 and the second soft magnetic thin film 3, the magnetoresistive element film 1 is formed. And the second soft magnetic thin film 3 is both stabilized. That is, in this conventional magnetoresistive effect magnetic head, the hard magnetic thin film pattern 6 is aligned in the longitudinal direction of the magnetoresistive element film 1 so that the hard magnetic thin film pattern 6 becomes the magnetoresistive element film 1 and the second layer. Since it is magnetically coupled to the soft magnetic thin film 3 of No. 3, the magnetizations of the magnetoresistive element film 1 and the second soft magnetic thin film 3 are stabilized.
【００１２】また、図８に断面図を示すように、図７に
示したハード磁性薄膜パターン６の代わりに、磁気抵抗
素子膜１、非磁性薄膜２及び第２の軟磁性薄膜３を順次
に積層した３層膜パターンの両側にパーマロイなどの第
３の軟磁性薄膜パターン８を設け、その上にＦｅＭｎな
どの反強磁性薄膜パターン９を設け、更にその反強磁性
薄膜パターン９上にトラック幅を隔てて電極パターン４
を形成した構造の磁気抵抗効果型磁気ヘッドも従来開発
されており、この構成の磁気抵抗効果型磁気ヘッドも図
７の磁気抵抗効果型磁気ヘッドと同様の効果が得られ
る。Further, as shown in the sectional view of FIG. 8, a magnetoresistive element film 1, a non-magnetic thin film 2 and a second soft magnetic thin film 3 are sequentially provided instead of the hard magnetic thin film pattern 6 shown in FIG. A third soft magnetic thin film pattern 8 such as permalloy is provided on both sides of the laminated three-layer film pattern, an antiferromagnetic thin film pattern 9 such as FeMn is provided thereon, and a track width is further provided on the antiferromagnetic thin film pattern 9. Separate electrode pattern 4
A magnetoresistive effect type magnetic head having a structure formed with has been conventionally developed, and the magnetoresistive effect type magnetic head having this structure can also obtain the same effect as the magnetoresistive effect type magnetic head of FIG.
【００１３】図７に示した従来の磁気抵抗効果型磁気ヘ
ッドは、以下の工程で製造される。磁気抵抗素子膜１、
非磁性薄膜２及び第２の軟磁性薄膜３を順次に積層して
３層膜を形成した後、その３層膜上にトラック幅に相当
する幅のレジストパターンを形成した後、イオンミリン
グなどにより３層膜内のレジストパターンが無い領域を
エッチングし、３層からなるパターンを形成する。その
後、上記レジストパターンをそのままにした状態で、ハ
ード磁性薄膜パターン６を形成する。The conventional magnetoresistive effect magnetic head shown in FIG. 7 is manufactured by the following steps. Magnetoresistive element film 1,
After the non-magnetic thin film 2 and the second soft magnetic thin film 3 are sequentially laminated to form a three-layer film, a resist pattern having a width corresponding to the track width is formed on the three-layer film, and then ion milling or the like is performed. A region having no resist pattern in the three-layer film is etched to form a three-layer pattern. Then, the hard magnetic thin film pattern 6 is formed with the resist pattern left as it is.
【００１４】しかる後に、リフトオフにより上記のレジ
ストパターン及びこのレジストパターン上に付着したハ
ード磁性薄膜を除去した後、トラック幅を隔てて電極パ
ターン４を形成する。これにより、図７に示した構成の
磁気抵抗効果型磁気ヘッドが製造される。After that, the resist pattern and the hard magnetic thin film adhering to the resist pattern are removed by lift-off, and then an electrode pattern 4 is formed with a track width. As a result, the magnetoresistive effect magnetic head having the configuration shown in FIG. 7 is manufactured.
【００１５】また、図８に示した従来の磁気抵抗効果型
磁気ヘッドは、上記図７の構成の磁気抵抗効果型磁気ヘ
ッドの工程のうち、ハード磁性薄膜パターンを形成して
からリフトオフする工程を、第３の軟磁性薄膜と反強磁
性薄膜とを積層した後、レジストとレジスト上の第３の
軟磁性薄膜及び反強磁性薄膜をリフトオフする工程に置
き換えることにより、製造できる。In the conventional magnetoresistive effect magnetic head shown in FIG. 8, the step of forming the hard magnetic thin film pattern and then lifting off is performed in the magnetoresistive effect type magnetic head having the structure shown in FIG. After stacking the third soft magnetic thin film and the antiferromagnetic thin film, the resist and the third soft magnetic thin film and the antiferromagnetic thin film on the resist are replaced by a step of lifting off, so that it can be manufactured.
【００１６】[0016]
【発明が解決しようとする課題】しかるに、上記の図７
及び図８に示した従来の磁気抵抗効果型磁気ヘッドは、
バルクハウゼンノイズの発生が抑制され、安定なヘッド
の動作が実現する上にオフトラック特性も良好である反
面、トラックを形成する磁気抵抗素子膜１及び第２の軟
磁性薄膜３の磁化を安定化するために、トラック幅領域
の外側にハード磁性薄膜パターン６あるいは第３の軟磁
性薄膜パターン８及びその上に反強磁性薄膜パターン９
を設けており、ハード磁性薄膜パターン６あるいは第３
の軟磁性薄膜パターン８の磁化の大きさと磁気抵抗素子
膜１及び第２の軟磁性薄膜３の磁化の大きさを一致させ
る膜特性制御マージンが一点となっているため、実質上
制御困難で浮遊磁界が発生し、磁気抵抗効果型磁気ヘッ
ドの再生効率が低下すると共に再生信号波形が歪んでし
まうという問題がある。However, FIG.
And the conventional magnetoresistive effect magnetic head shown in FIG.
The generation of Barkhausen noise is suppressed, stable head operation is realized, and off-track characteristics are good, but the magnetization of the magnetoresistive element film 1 and the second soft magnetic thin film 3 that form a track is stabilized. In order to achieve this, the hard magnetic thin film pattern 6 or the third soft magnetic thin film pattern 8 is formed outside the track width region, and the antiferromagnetic thin film pattern 9 is formed thereon.
The hard magnetic thin film pattern 6 or the third
Since there is only one film characteristic control margin for matching the magnitude of magnetization of the soft magnetic thin film pattern 8 with the magnitudes of magnetization of the magnetoresistive element film 1 and the second soft magnetic thin film 3, it is practically difficult to control and float. There is a problem that a magnetic field is generated, the reproducing efficiency of the magnetoresistive head is lowered, and the reproduced signal waveform is distorted.
【００１７】本発明は以上の点に鑑みなされたもので、
バルクハウゼンノイズが抑制され、かつ、再生信号効率
が増大した磁気抵抗効果型磁気ヘッドを提供することを
目的とする。The present invention has been made in view of the above points,
An object of the present invention is to provide a magnetoresistive effect magnetic head in which Barkhausen noise is suppressed and reproduction signal efficiency is increased.
【００１８】[0018]
【課題を解決するための手段】本発明は上記の目的を達
成するため、第１の軟磁性薄膜からなる磁気抵抗素子膜
と第２の軟磁性薄膜が非磁性薄膜を介して対向配置され
ており、第２の軟磁性薄膜の磁化により磁気抵抗素子膜
に横バイアス磁界を与える構造の磁気抵抗効果型磁気ヘ
ッドにおいて、磁気抵抗効果型磁気ヘッドのトラック幅
を隔てて設けられた電極膜と磁気抵抗素子膜との間に反
強磁性薄膜を設け、非磁性薄膜及び第２の軟磁性薄膜は
それぞれトラック幅にほぼ等しいパターン幅を有し、か
つ、トラック幅の外側では第２の軟磁性薄膜の側面に磁
気抵抗素子膜が接している構造としたものである。In order to achieve the above object, the present invention provides a magnetoresistive element film composed of a first soft magnetic thin film and a second soft magnetic thin film, which are opposed to each other with a nonmagnetic thin film interposed therebetween. In the magnetoresistive effect magnetic head having a structure in which a lateral bias magnetic field is applied to the magnetoresistive element film by the magnetization of the second soft magnetic thin film, an electrode film and a magnetic film provided apart from the track width of the magnetoresistive effect magnetic head are used. An antiferromagnetic thin film is provided between the resistive element film, the non-magnetic thin film and the second soft magnetic thin film each have a pattern width substantially equal to the track width, and the second soft magnetic thin film is outside the track width. The magnetic resistance element film is in contact with the side surface of the.
【００１９】また、本発明は磁気抵抗効果型磁気ヘッド
のトラック幅を隔てて設けられた電極膜と磁気抵抗素子
膜との間に反強磁性薄膜を設け、非磁性薄膜はトラック
幅にほぼ等しいパターン幅を有し、磁気抵抗素子膜及び
第２の軟磁性薄膜はそれぞれ前記トラック幅よりも広い
パターン幅を有し、かつ、トラック幅の外側で互いに接
した領域を有する構造としたものである。Further, according to the present invention, an antiferromagnetic thin film is provided between an electrode film and a magnetoresistive element film provided with a track width of the magnetoresistive magnetic head separated, and the nonmagnetic thin film is approximately equal to the track width. The magnetoresistive element film and the second soft magnetic thin film each have a pattern width, have a pattern width wider than the track width, and have a region in contact with each other outside the track width. .
【００２０】更に、本発明は磁気抵抗素子膜上に非磁性
薄膜及び反強磁性薄膜をそれぞれ設けると共に、非磁性
薄膜及び反強磁性薄膜上に第２の軟磁性薄膜を設け、非
磁性薄膜は磁気抵抗効果型磁気ヘッドのトラック幅にほ
ぼ等しいパターン幅を有し、磁気抵抗素子膜及び第２の
軟磁性薄膜はそれぞれトラック幅よりも広いパターン幅
を有する構造としたものである。Further, according to the present invention, a nonmagnetic thin film and an antiferromagnetic thin film are respectively provided on the magnetoresistive element film, and a second soft magnetic thin film is provided on the nonmagnetic thin film and the antiferromagnetic thin film. The structure has a pattern width almost equal to the track width of the magnetoresistive head and the magnetoresistive element film and the second soft magnetic thin film each have a pattern width wider than the track width.
【００２１】[0021]
【作用】本発明では、磁気抵抗素子膜及び第２の軟磁性
薄膜は磁気抵抗効果型磁気ヘッドのトラック幅の範囲の
みならず、その外側の領域にまで広がって形成される。
一方、磁気抵抗素子膜及び第２の軟磁性薄膜をそれぞれ
隔てる非磁性薄膜は略トラック幅に等しいパターン幅を
有する。従って、磁気抵抗効果型磁気ヘッドのトラック
幅内では磁気抵抗素子膜と第２の軟磁性薄膜は非磁性薄
膜により隔てられるが、トラック幅の外側の領域では互
いに直接に、若しくは反強磁性薄膜を介して間接に接す
る。In the present invention, the magnetoresistive element film and the second soft magnetic thin film are formed not only in the range of the track width of the magnetoresistive effect magnetic head but also in the area outside thereof.
On the other hand, the nonmagnetic thin film separating the magnetoresistive element film and the second soft magnetic thin film has a pattern width substantially equal to the track width. Therefore, within the track width of the magnetoresistive head, the magnetoresistive element film and the second soft magnetic thin film are separated by the nonmagnetic thin film, but in the region outside the track width, either directly or with the antiferromagnetic thin film. Contact indirectly through.
【００２２】このため、磁気抵抗効果型磁気ヘッドのト
ラック幅の外側の領域では、磁気抵抗素子膜上に形成さ
れた反強磁性薄膜による磁化安定化効果によって、磁気
抵抗素子膜のみならず第２の軟磁性薄膜の磁化も安定化
される。また、磁気抵抗素子膜及び第２の軟磁性薄膜は
磁気抵抗効果型磁気ヘッドのトラック幅の外側の領域に
広がって形成されているので、トラック幅の境界領域で
両層の磁化の大きさが不連続となることがなく、磁気抵
抗効果型磁気ヘッドの再生効率を阻害する浮遊磁界の発
生を防止できる。Therefore, in the region outside the track width of the magnetoresistive head, the anti-ferromagnetic thin film formed on the magnetoresistive element film stabilizes the magnetization, and not only the magnetoresistive element film but also the second layer. The magnetization of the soft magnetic thin film is also stabilized. Further, since the magnetoresistive element film and the second soft magnetic thin film are formed so as to spread in the region outside the track width of the magnetoresistive effect magnetic head, the magnitude of the magnetization of both layers in the boundary region of the track width. There is no discontinuity, and it is possible to prevent generation of a stray magnetic field that hinders the reproducing efficiency of the magnetoresistive head.
【００２３】[0023]
【実施例】次に、本発明の実施例について説明する。図
１は本発明の磁気抵抗効果型磁気ヘッドの第１実施例の
断面図を示す。同図において、例えば膜厚２μｍのＮｉ
Ｆｅからなる下側磁気シールド膜１０の上に被覆された
膜厚１０００Åのアルミナからなる絶縁膜１１の上に、
第２の軟磁性薄膜１３（前記第２の軟磁性薄膜３に相
当）及び非磁性薄膜１４（前記非磁性薄膜２に相当）か
らなる２層パターン１２が形成されている。Next, an embodiment of the present invention will be described. FIG. 1 shows a sectional view of a first embodiment of a magnetoresistive effect magnetic head according to the present invention. In the figure, for example, Ni with a film thickness of 2 μm is used.
On the lower magnetic shield film 10 made of Fe, on the insulating film 11 made of alumina with a film thickness of 1000 Å,
A two-layer pattern 12 including a second soft magnetic thin film 13 (corresponding to the second soft magnetic thin film 3) and a non-magnetic thin film 14 (corresponding to the non-magnetic thin film 2) is formed.
【００２４】また、この２層パターン１２の上及び両側
に磁気抵抗素子膜１５（前記磁気抵抗素子膜１に相当）
が形成され、その上にはＦｅＭｎからなる反強磁性薄膜
１６（前記反強磁性薄膜パターン９に相当）が形成さ
れ、その上にトラック幅を隔てて電極膜１７（前記電極
パターン４に相当）が形成されている。更に、電極膜１
７及び磁気抵抗素子膜１５の上が絶縁膜１８で被覆され
た後、上側磁気シールド膜１９が形成されている。Further, a magnetoresistive element film 15 (corresponding to the magnetoresistive element film 1) is formed on and on both sides of the two-layer pattern 12.
Is formed, an antiferromagnetic thin film 16 made of FeMn (corresponding to the antiferromagnetic thin film pattern 9) is formed thereon, and an electrode film 17 (corresponding to the electrode pattern 4) is formed thereon with a track width. Are formed. Furthermore, the electrode film 1
7 and the magnetoresistive element film 15 are covered with an insulating film 18, and then an upper magnetic shield film 19 is formed.
【００２５】本実施例の磁気抵抗効果型磁気ヘッドは、
以下の工程で製造される。すなわち、下側磁気シールド
膜１０と絶縁膜１１の２層の上に、組成がＣｏＺｒＭｏ
の第２の軟磁性薄膜１３をスパッタリングにより膜厚２
５０Åの厚さで形成した後、その上にＴａで構成される
非磁性薄膜１４を膜厚２００Åで同様にスパッタリング
により連続して成膜する。The magnetoresistive head according to this embodiment is
It is manufactured by the following steps. That is, the composition is CoZrMo on the two layers of the lower magnetic shield film 10 and the insulating film 11.
The second soft magnetic thin film 13 of
After being formed to a thickness of 50 Å, a non-magnetic thin film 14 made of Ta is similarly formed thereon to a film thickness of 200 Å by sputtering similarly.
【００２６】その後、この非磁性薄膜１４上にトラック
幅３μｍに等しいパターン幅のレジストパターンを形成
し、このレジストパターンをマスクとしてイオンミリン
グなどにより上記の第２の軟磁性薄膜１３と非磁性薄膜
１４からなる２層をエッチングした後レジストパターン
を除去することにより、レジストパターンの下の領域に
あった２層パターン１２を得る。これにより、２層パタ
ーン１２の上側の非磁性薄膜１４はこの磁気抵抗効果型
磁気ヘッドのトラック幅にほぼ等しい幅を有し、下側の
第２の軟磁性薄膜１３は上記のトラック幅より若干広く
形成される。Thereafter, a resist pattern having a pattern width equal to the track width of 3 μm is formed on the nonmagnetic thin film 14, and the second soft magnetic thin film 13 and the nonmagnetic thin film 14 are formed by ion milling using this resist pattern as a mask. The two-layered pattern consisting of 2 is etched and then the resist pattern is removed to obtain the two-layered pattern 12 in the region below the resist pattern. As a result, the nonmagnetic thin film 14 on the upper side of the two-layer pattern 12 has a width substantially equal to the track width of the magnetoresistive magnetic head, and the second soft magnetic thin film 13 on the lower side is slightly smaller than the above track width. Widely formed.
【００２７】続いて、ＮｉＦｅを組成とする磁気抵抗素
子膜１５をスパッタリングにより２層パターン１２及び
絶縁膜１１上に膜厚２００Åの厚さで形成する。次に、
この磁気抵抗素子膜１５上に再びトラック幅３μｍに等
しいパターン幅のレジストパターンを形成した後、Ｆｅ
Ｍｎからなる反強磁性薄膜１６を膜厚１００Åで成膜
し、引き続きＡｕからなる電極膜１７を膜厚１５００Å
で共にスパッタリングで連続的に成膜する。Subsequently, a magnetoresistive element film 15 having a composition of NiFe is formed on the two-layer pattern 12 and the insulating film 11 by sputtering to have a thickness of 200Å. next,
After forming a resist pattern having a pattern width equal to 3 μm on the magnetoresistive element film 15 again, Fe
An antiferromagnetic thin film 16 made of Mn is formed to a film thickness of 100Å, and then an electrode film 17 made of Au is formed to a film thickness of 1500Å.
Both are continuously formed by sputtering.
【００２８】しかる後に、膜厚１５００Åでアルミナに
よる絶縁膜１８を形成した後、膜厚２μｍでＮｉＦｅに
よる上側磁気シールド膜１９を形成する。以上のように
して第１実施例の磁気抵抗効果型磁気ヘッドが製造され
る。After that, an insulating film 18 made of alumina is formed to a film thickness of 1500 Å, and an upper magnetic shield film 19 made of NiFe is formed to a film thickness of 2 μm. The magnetoresistive head of the first embodiment is manufactured as described above.
【００２９】本実施例によれば、非磁性薄膜１４は磁気
抵抗効果型磁気ヘッドのトラック幅にほぼ等しい幅を有
し、かつ、第２の軟磁性薄膜１３はこのトラック幅より
若干広く形成されると共に、トラック幅のやや外側で磁
気抵抗素子膜１５が第２の軟磁性薄膜１３の側面に接す
るように構成されているため、磁気抵抗効果型磁気ヘッ
ドのトラック幅の外側の領域では、磁気抵抗素子膜１上
に形成された反強磁性薄膜１６による磁化安定化効果に
よって磁気抵抗素子膜１５のみならず第２の軟磁性薄膜
１３の磁化も安定化される。According to this embodiment, the non-magnetic thin film 14 has a width substantially equal to the track width of the magnetoresistive magnetic head, and the second soft magnetic thin film 13 is formed slightly wider than this track width. In addition, since the magnetoresistive element film 15 is configured to be in contact with the side surface of the second soft magnetic thin film 13 slightly outside the track width, in the region outside the track width of the magnetoresistive head, the magnetic resistance is reduced. The magnetization stabilizing effect of the antiferromagnetic thin film 16 formed on the resistance element film 1 stabilizes not only the magnetization of the magnetoresistive element film 15 but also the second soft magnetic thin film 13.
【００３０】また、本実施例によれば、磁気抵抗素子膜
１５及び第２の軟磁性薄膜１３はそれぞれ磁気抵抗効果
型磁気ヘッドのトラック幅のやや外側の領域に拡がって
形成されているので、トラック幅の境界領域で両層の磁
化の大きさが不連続となって、磁気抵抗効果型磁気ヘッ
ドの再生効率を阻害する浮遊磁界が発生することもな
い。Further, according to the present embodiment, the magnetoresistive element film 15 and the second soft magnetic thin film 13 are formed so as to extend to the regions slightly outside the track width of the magnetoresistive head. In the boundary region of the track width, the magnitudes of the magnetizations of both layers are not discontinuous, and a stray magnetic field that hinders the reproducing efficiency of the magnetoresistive head is not generated.
【００３１】次に、本発明の第２実施例について説明す
る。図２は本発明になる磁気効果型磁気ヘッドの第２実
施例の断面図を示す。同図中、図１と同一構成部分には
同一符号を付してある。図２において、膜厚２μｍのＮ
ｉＦｅからなる下側磁気シールド膜１０と膜厚１０００
Åのアルミナからなる絶縁層１１とが積層された２層膜
上に膜厚２５０Åの第２の軟磁性薄膜２１が被覆形成さ
れている。また、この第２の軟磁性薄膜２１上には非磁
性薄膜１４がこの磁気抵抗効果型磁気ヘッドのトラック
幅に等しい幅で形成されたパターン２２が形成されてい
る。Next, a second embodiment of the present invention will be described. FIG. 2 is a sectional view of a second embodiment of the magnetic effect type magnetic head according to the present invention. In the figure, the same components as those in FIG. 1 are designated by the same reference numerals. In FIG. 2, N having a film thickness of 2 μm
Lower magnetic shield film 10 made of iFe and film thickness 1000
A second soft magnetic thin film 21 having a film thickness of 250 Å is formed on the two-layer film in which the insulating layer 11 made of Å alumina is laminated. Further, a pattern 22 is formed on the second soft magnetic thin film 21 in which the non-magnetic thin film 14 is formed with a width equal to the track width of the magnetoresistive magnetic head.
【００３２】更に、この非磁性薄膜１４及び第２の軟磁
性薄膜２１上に磁気抵抗素子膜１５が形成され、その上
に反強磁性薄膜１６と電極膜１７とがそれぞれトラック
幅を隔てて形成されている。電極膜１７及びこの電極膜
１７で覆われていない磁気抵抗素子膜１５上にはアルミ
ナからなる絶縁膜１８が形成され、この絶縁膜１８上に
上側磁気シールド膜１９が形成されている。Further, a magnetoresistive element film 15 is formed on the non-magnetic thin film 14 and the second soft magnetic thin film 21, and an antiferromagnetic thin film 16 and an electrode film 17 are formed on the magnetoresistive element film 15 with a track width therebetween. Has been done. An insulating film 18 made of alumina is formed on the electrode film 17 and the magnetoresistive element film 15 not covered with the electrode film 17, and an upper magnetic shield film 19 is formed on the insulating film 18.
【００３３】次に、本実施例の製造方法について図３の
各工程断面図と共に説明する。まず、アルミナからなる
絶縁層１１上に組成がＣｏＺｒＭｏの第２の軟磁性薄膜
２１がスパッタリングにより形成され、更に、その上に
Ｔａで構成される非磁性薄膜１４が膜厚２００Åで同様
にしてスパッタリングにより連続して成膜されて図３
（Ａ）に示す構造が得られた後、非磁性薄膜１４上にト
ラック幅の３μｍに略等しいパターン幅のレジストパタ
ーン２３が図３（Ｂ）に示す如くに形成される。Next, the manufacturing method of this embodiment will be described with reference to the sectional views of each step of FIG. First, a second soft magnetic thin film 21 having a composition of CoZrMo is formed on an insulating layer 11 made of alumina by sputtering, and a nonmagnetic thin film 14 made of Ta is formed on the insulating layer 11 with a film thickness of 200Å in the same manner. Film is continuously formed by
After the structure shown in (A) is obtained, a resist pattern 23 having a pattern width substantially equal to the track width of 3 μm is formed on the non-magnetic thin film 14 as shown in FIG. 3 (B).
【００３４】次に、イオンミリングなどにより非磁性薄
膜１４のみを、レジストパターン２３の直下の領域を除
いてエッチングすることにより、トラック外に広がって
いる第２の軟磁性薄膜２１の上にトラック幅に等しい幅
で形成された非磁性薄膜１４からなるパターン２２が図
３（Ｃ）に示す如く形成された後、レジストパターン２
３を公知の方法で図３（Ｄ）に示すように除去される。Next, only the non-magnetic thin film 14 is etched by ion milling or the like except the region immediately below the resist pattern 23, and the track width is formed on the second soft magnetic thin film 21 extending outside the track. After the pattern 22 made of the non-magnetic thin film 14 having a width equal to that of the resist pattern 2 is formed as shown in FIG.
3 is removed by a known method as shown in FIG.
【００３５】続いて、ＮｉＦｅを組成とする磁気抵抗素
子膜１５をスパッタリングにより膜厚２００Åの厚さで
図３（Ｅ）に示すように形成する。その後、図３（Ｆ）
に示すように、非磁性薄膜１４及び磁気抵抗素子膜１５
の２層パターン上にトラック幅に等しい幅のレジストパ
ターン２４を再び形成した後、ＦｅＭｎからなる反強磁
性薄膜１６をレジストパターン２４上及びレジストパタ
ーン２４で覆われていない磁気抵抗素子膜１５上に被覆
形成し、更にその上に金（Ａｕ）による電極膜１７を被
覆形成する。Subsequently, a magnetoresistive element film 15 having a composition of NiFe is formed by sputtering to a thickness of 200 Å as shown in FIG. 3 (E). After that, FIG. 3 (F)
As shown in FIG.
After the resist pattern 24 having a width equal to the track width is formed again on the two-layer pattern, the antiferromagnetic thin film 16 made of FeMn is formed on the resist pattern 24 and the magnetoresistive element film 15 not covered with the resist pattern 24. A coating is formed, and an electrode film 17 made of gold (Au) is further formed thereon.
【００３６】しかる後に、リフトオフによりレジストパ
ターン２４及びレジストパターン２４上に付着した反強
磁性薄膜１６及び電極膜１７を除去して図３（Ｇ）に示
す構造を得る。そして、膜厚１５００Åでアルミナ製の
絶縁膜１８を形成した後、膜厚２μｍのＮｉＦｅによる
上側磁気シールド膜１９が図２に示したように形成され
る。After that, the resist pattern 24 and the antiferromagnetic thin film 16 and the electrode film 17 attached on the resist pattern 24 are removed by lift-off to obtain the structure shown in FIG. Then, after forming the insulating film 18 made of alumina with a film thickness of 1500 Å, the upper magnetic shield film 19 of NiFe with a film thickness of 2 μm is formed as shown in FIG.
【００３７】このようにして、本実施例によれば、磁気
抵抗効果型磁気ヘッドのトラック幅の外側では磁気抵抗
素子膜１５と第２の軟磁性薄膜２１とが互いに接してい
るので、第１実施例と同様の効果を奏する。As described above, according to this embodiment, the magnetoresistive element film 15 and the second soft magnetic thin film 21 are in contact with each other outside the track width of the magnetoresistive effect magnetic head. The same effect as the embodiment is obtained.
【００３８】図１に示した第１実施例と図２及び図３に
示した第２実施例の再生出力及び再生信号波形の対称性
の様子を図７の従来例とそれぞれ対比してまとめて表１
に示す。The reproduction output and reproduction signal waveform symmetry of the first embodiment shown in FIG. 1 and the second embodiment shown in FIGS. 2 and 3 are summarized in comparison with the conventional example of FIG. Table 1
Shown in
【００３９】[0039]
【表１】 表１の再生出力は、保磁力１８００Ｏｅ、残留磁束密度
Ｂｒと膜厚δの積が１００Ｇμｍの特性を有する磁気記
録媒体に１００ｋＦＲＰＩで記録した記録パターンを浮
上量０．０６μｍ、回転数５４００ｒｐｍの条件で再生
した再生出力である。[Table 1] The reproduction output of Table 1 is a recording pattern recorded at 100 kFRPI on a magnetic recording medium having characteristics of a coercive force of 1800 Oe, a product of residual magnetic flux density Br and film thickness δ of 100 Gμm, under the conditions of a flying height of 0.06 μm and a rotation speed of 5400 rpm. This is the playback output that was played.
【００４０】表１には従来の図７の構成の同一トラック
幅を有する磁気抵抗効果型磁気ヘッドの再生出力及び再
生波形の対称性を同一条件で評価した結果を比較のため
に示している。表１から明らかなように、第１実施例の
磁気抵抗効果型磁気ヘッドでは最大１３００μＶP-P の
出力が得られ、かつ、再生波形の非対称性の変動も±５
％以内と小さいのに対して、比較例では出力１０００μ
ＶP-P 以下で、対称性の変動も１０％以上と大きい。Table 1 shows, for comparison, the results of evaluating the symmetry of the reproduction output and the reproduction waveform of the conventional magnetoresistive effect magnetic head having the same track width and the structure shown in FIG. 7 under the same conditions. As is clear from Table 1, the magnetoresistive effect magnetic head of the first embodiment can obtain an output of 1300 μV PP at the maximum, and the fluctuation of the asymmetry of the reproduced waveform is ± 5.
The output is 1000μ in the comparative example, while it is as small as less than 100%.
At V PP or less, the symmetry variation is as large as 10% or more.
【００４１】また、第２実施例の磁気抵抗効果型磁気ヘ
ッドでは最大１５００μＶP-P の出力が得られ、かつ、
再生波形の非対称性の変動も±５％以内と小さいのに対
して、比較例では上記したように出力は１０００μＶ
P-P 以下で、対称性の変動も１０％以上と大きい。この
ように、上記の各実施例では、再生効率が良いために再
生出力が従来よりも大きく、波形歪みの小さな磁気抵抗
効果型磁気ヘッドが提供でき、高密度磁気ディスク装置
に適用して好適である。The magnetoresistive head of the second embodiment can provide an output of 1500 μV PP at the maximum, and
The fluctuation of the asymmetry of the reproduced waveform is small within ± 5%, whereas the output is 1000 μV in the comparative example as described above.
Below PP , the symmetry variation is as large as 10% or more. As described above, in each of the above-described embodiments, since the reproduction efficiency is good, the reproduction output is larger than the conventional one, and the magnetoresistive effect magnetic head with the smaller waveform distortion can be provided, which is suitable for the high density magnetic disk device. is there.
【００４２】次に、本発明に係る磁気抵抗効果型磁気ヘ
ッドの第３実施例の製造方法について図４と共に説明す
る。同図中、図１乃至図３と同一構成部分には同一符号
を付してある。図４に示すように、本実施例では、ま
ず、図示しない下側磁気シールド膜１０上のアルミナか
らなる膜厚１０００Åの絶縁層１１上に、ＮｉＦｅを組
成とする磁気抵抗素子膜がスパッタリングにより膜厚２
００Åの厚さで形成され、更に、その上にＴａで構成さ
れる非磁性薄膜１４が膜厚２００Åで同様にしてスパッ
タリングにより連続して成膜されて図４（Ａ）に示す構
造が得られる。Next, a method of manufacturing the magnetoresistive effect magnetic head according to the third embodiment of the present invention will be described with reference to FIG. In the figure, the same components as those in FIGS. 1 to 3 are designated by the same reference numerals. As shown in FIG. 4, in this embodiment, first, a magnetoresistive element film having a composition of NiFe is formed by sputtering on an insulating layer 11 made of alumina and having a film thickness of 1000 Å on a lower magnetic shield film 10 not shown. Thickness 2
A film having a thickness of 00Å and a non-magnetic thin film 14 made of Ta and having a film thickness of 200Å are continuously formed by sputtering in the same manner to obtain the structure shown in FIG. 4 (A). .
【００４３】しかる後に、非磁性薄膜１４上にトラック
幅の３μｍに略等しいパターン幅のレジストパターン２
３が図４（Ｂ）に示す如くに形成される。次に、イオン
ミリングなどにより非磁性薄膜１４のみを、レジストパ
ターン２３をマスクとしてレジストパターン２３の直下
の領域を除いてエッチングすることにより、トラック外
に広がっている磁気抵抗効果素子２６の上にトラック幅
に等しい幅で形成された非磁性薄膜１４からなるパター
ン２７が図４（Ｃ）に示す如く形成される。Thereafter, the resist pattern 2 having a pattern width substantially equal to the track width of 3 μm is formed on the non-magnetic thin film 14.
3 is formed as shown in FIG. Then, only the nonmagnetic thin film 14 is etched by ion milling or the like except the region immediately below the resist pattern 23 using the resist pattern 23 as a mask, so that the track is formed on the magnetoresistive effect element 26 spreading outside the track. A pattern 27 composed of the non-magnetic thin film 14 having a width equal to the width is formed as shown in FIG.
【００４４】続いて、レジストパターン２３上及びレジ
ストパターン２３で覆われていない磁気抵抗効果素子２
６上にＦｅＭｎからなる反強磁性薄膜１６が膜厚１００
Åで図４（Ｄ）に示す如く成膜される。次に、レジスト
パターン２３上に成膜されたＦｅＭｎからなる反強磁性
薄膜１６がリフトオフによりレジストパターン２３と共
に除去される。これにより、図４（Ｅ）に示すようにト
ラック幅に等しい膜厚２００Åの非磁性薄膜１４の側面
に、膜厚１００Åの反強磁性薄膜１６が接触した状態で
非磁性薄膜１４と共に磁気抵抗素子膜２６上に形成され
る。Subsequently, the magnetoresistive effect element 2 on the resist pattern 23 and not covered with the resist pattern 23.
6, the antiferromagnetic thin film 16 made of FeMn has a film thickness of 100.
A film is formed at Å as shown in FIG. Next, the antiferromagnetic thin film 16 made of FeMn formed on the resist pattern 23 is removed together with the resist pattern 23 by lift-off. As a result, as shown in FIG. 4E, the anti-ferromagnetic thin film 16 having a film thickness of 100 Å is in contact with the side surface of the non-magnetic thin film 14 having a film thickness of 200 Å which is equal to the track width, together with the non-magnetic thin film 14 and the magnetoresistive element. It is formed on the film 26.
【００４５】次に、図４（Ｆ）に示すように、非磁性薄
膜１４及び反強磁性薄膜１６上に組成がＣｏＺｒＭｏの
第２の軟磁性薄膜２８がスパッタリングにより膜厚２５
０Åの厚さで形成される。引き続き、Ａｕによる電極膜
１７を第２の軟磁性薄膜２８上に膜厚１５００Åでスパ
ッタリングにより連続的に成膜した後、レジストをパタ
ーニングし、図４（Ｇ）に示す如くトラック幅を隔てて
電極膜１７が第２の軟磁性薄膜２８上に形成される。し
かる後に、膜厚１５００Åでアルミナ製の絶縁膜を形成
した後、膜厚２μｍのＮｉＦｅによる上側磁気シールド
膜が形成される。Next, as shown in FIG. 4F, a second soft magnetic thin film 28 having a composition of CoZrMo is formed on the nonmagnetic thin film 14 and the antiferromagnetic thin film 16 by sputtering to have a film thickness 25.
It is formed with a thickness of 0Å. Subsequently, an electrode film 17 made of Au is continuously formed on the second soft magnetic thin film 28 with a film thickness of 1500Å by sputtering, and then the resist is patterned to form electrodes with track widths as shown in FIG. 4 (G). The film 17 is formed on the second soft magnetic thin film 28. Thereafter, an alumina insulating film having a film thickness of 1500 Å is formed, and then an upper magnetic shield film made of NiFe having a film thickness of 2 μm is formed.
【００４６】このようにして製造された本実施例の磁気
抵抗効果型磁気ヘッドによれば、磁気抵抗効果型磁気ヘ
ッドのトラック幅の外側の領域に磁気抵抗素子膜２６と
第２の軟磁性薄膜２８とが広がって形成されているの
で、第１及び第２実施例と同様に従来に比べて再生出力
の向上、波形非対称性の改善を実現できる。According to the magnetoresistive effect magnetic head of this embodiment manufactured in this way, the magnetoresistive element film 26 and the second soft magnetic thin film are formed in the region outside the track width of the magnetoresistive effect magnetic head. 28 is formed so as to be widened, it is possible to realize improvement of reproduction output and improvement of waveform asymmetry as compared with the conventional case as in the first and second embodiments.
【００４７】なお、本発明は上記の各実施例に限定され
るものではなく、例えば第２の軟磁性薄膜１３、２１、
２８としてはＣｏＺｒＭｏ薄膜の代わりにＮｉＦｅＲｈ
あるいは他の軟磁性薄膜を用いてもよく、また、非磁性
薄膜１４としてはＴａの代わりに他の非磁性薄膜でも同
様な効果が期待できる。更に、磁気抵抗素子膜１、２６
においても、実施例ではＮｉＦｅを用いているが、Ｎｉ
ＦｅＣｏなどを用いることもできる。反強磁性薄膜１６
はＦｅＭｎの他にＮｉＭｎ、ＮｉＯなどを用いてもよ
く、電極材料もＡｕの他にタングステン（Ｗ）などの他
の公知の電極材料を用いてもよい。The present invention is not limited to the above-mentioned embodiments, and for example, the second soft magnetic thin films 13, 21,
28, NiFeRh instead of CoZrMo thin film
Alternatively, another soft magnetic thin film may be used, and the same effect can be expected by using another non-magnetic thin film instead of Ta as the non-magnetic thin film 14. Further, the magnetoresistive element films 1 and 26
Also, in the examples, NiFe is used, but Ni
FeCo or the like can also be used. Antiferromagnetic thin film 16
In addition to FeMn, NiMn, NiO, or the like may be used, and as the electrode material, other known electrode materials such as tungsten (W) may be used in addition to Au.
【００４８】[0048]
【発明の効果】以上説明したように、本発明によれば、
磁気抵抗効果型磁気ヘッドのトラック幅の外側の領域で
は、磁気抵抗素子膜上に形成された反強磁性薄膜による
磁化安定化効果によって、磁気抵抗素子膜のみならず第
２の軟磁性薄膜の磁化も安定化され、また、磁気抵抗素
子膜及び第２の軟磁性薄膜は磁気抵抗効果型磁気ヘッド
のトラック幅の外側の領域に広がって形成されているの
で、トラック幅の境界領域で両層の磁化の大きさが不連
続となることがなく、磁気抵抗効果型磁気ヘッドの再生
効率を阻害する浮遊磁界の発生を防止できるため、従来
に比し良好な再生効率を得ることができると共に、良好
な再生信号波形を得ることができ、よって、バルクハウ
ゼンノイズを抑制できると共に再生出力を大きくでき、
再生波形歪みを小さくできる。As described above, according to the present invention,
In the region outside the track width of the magnetoresistive head, the anti-ferromagnetic thin film formed on the magnetoresistive element film stabilizes the magnetization of not only the magnetoresistive element film but also the second soft magnetic thin film. Is also stabilized, and since the magnetoresistive element film and the second soft magnetic thin film are formed so as to spread in the region outside the track width of the magnetoresistive effect magnetic head, both layers are formed in the boundary region of the track width. Since the size of the magnetization does not become discontinuous and the generation of a stray magnetic field that hinders the reproduction efficiency of the magnetoresistive effect type magnetic head can be prevented, good reproduction efficiency can be obtained and good Therefore, it is possible to obtain Barkhausen noise and to increase the reproduction output.
The reproduced waveform distortion can be reduced.
【図１】本発明の第１実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the present invention.
【図２】本発明の第２実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the present invention.
【図３】本発明の第２実施例の製造方法の説明用各工程
の装置断面図である。FIG. 3 is a sectional view of the apparatus in each step for explaining the manufacturing method according to the second embodiment of the present invention.
【図４】本発明の第３実施例の製造方法の説明用各工程
の装置断面図である。FIG. 4 is a sectional view of the apparatus in each step for explaining the manufacturing method according to the third embodiment of the present invention.
【図５】従来の磁気抵抗効果型磁気ヘッドの一例の概略
斜視図である。FIG. 5 is a schematic perspective view of an example of a conventional magnetoresistive effect magnetic head.
【図６】従来ヘッドの各例の断面図である。FIG. 6 is a sectional view of each example of a conventional head.
【図７】従来ヘッドの他の例の断面図である。FIG. 7 is a cross-sectional view of another example of a conventional head.
【図８】従来ヘッドの更に他の例の断面図である。FIG. 8 is a sectional view of still another example of the conventional head.
１０ 下側磁気シールド膜 １１、１８ 絶縁膜 １２ ２層パターン １３、２１、２８ 第２の軟磁性薄膜 １４ 非磁性膜 １５、２６ 磁気抵抗素子膜 １６ 反強磁性薄膜 １７ 電極膜 １９ 上側磁気シールド膜 10 Lower magnetic shield film 11, 18 Insulating film 12 Two-layer pattern 13, 21, 28 Second soft magnetic thin film 14 Nonmagnetic film 15, 26 Magnetoresistive element film 16 Antiferromagnetic thin film 17 Electrode film 19 Upper magnetic shield film
Claims (5)
膜と第２の軟磁性薄膜が非磁性薄膜を介して対向配置さ
れており、該第２の軟磁性薄膜の磁化により該磁気抵抗
素子膜に横バイアス磁界を与える構造の磁気抵抗効果型
磁気ヘッドにおいて、 該磁気抵抗効果型磁気ヘッドのトラック幅を隔てて設け
られた電極膜と前記磁気抵抗素子膜との間に反強磁性薄
膜を設け、前記非磁性薄膜及び前記第２の軟磁性薄膜は
それぞれ前記トラック幅にほぼ等しいパターン幅を有
し、かつ、該トラック幅の外側では該第２の軟磁性薄膜
の側面に前記磁気抵抗素子膜が接している構造としたこ
とを特徴とする磁気抵抗効果型磁気ヘッド。1. A magnetoresistive element film composed of a first soft magnetic thin film and a second soft magnetic thin film are arranged so as to face each other with a nonmagnetic thin film interposed therebetween, and the magnetoresistive element is magnetized by the magnetization of the second soft magnetic thin film. A magnetoresistive effect magnetic head having a structure for applying a lateral bias magnetic field to an element film, wherein an antiferromagnetic thin film is provided between an electrode film provided at a track width of the magnetoresistive effect magnetic head and the magnetoresistive element film. The non-magnetic thin film and the second soft magnetic thin film each have a pattern width substantially equal to the track width, and the magnetic resistance is provided on the side surface of the second soft magnetic thin film outside the track width. A magnetoresistive effect magnetic head having a structure in which element films are in contact with each other.
は、順次に積層された２層パターンを形成し、前記磁気
抵抗素子膜は該２層パターンの上面及び側面に形成され
ていることを特徴とする請求項１記載の磁気抵抗効果型
磁気ヘッド。2. The second soft magnetic thin film and the non-magnetic thin film form a two-layer pattern that is sequentially stacked, and the magnetoresistive element film is formed on an upper surface and a side surface of the two-layer pattern. The magnetoresistive effect type magnetic head according to claim 1.
膜と第２の軟磁性薄膜が非磁性薄膜を介して対向配置さ
れており、該第２の軟磁性薄膜の磁化により該磁気抵抗
素子膜に横バイアス磁界を与える構造の磁気抵抗効果型
磁気ヘッドにおいて、 該磁気抵抗効果型磁気ヘッドのトラック幅を隔てて設け
られた電極膜と前記磁気抵抗素子膜との間に反強磁性薄
膜を設け、前記非磁性薄膜は前記トラック幅にほぼ等し
いパターン幅を有し、該磁気抵抗素子膜及び該第２の軟
磁性薄膜はそれぞれ前記トラック幅よりも広いパターン
幅を有し、かつ、該トラック幅の外側で互いに接した領
域を有する構造としたことを特徴とする磁気抵抗効果型
磁気ヘッド。3. A magnetoresistive element film composed of a first soft magnetic thin film and a second soft magnetic thin film are arranged so as to face each other with a nonmagnetic thin film interposed therebetween, and the magnetoresistive element is magnetized by magnetization of the second soft magnetic thin film. A magnetoresistive effect magnetic head having a structure for applying a lateral bias magnetic field to an element film, wherein an antiferromagnetic thin film is provided between an electrode film provided at a track width of the magnetoresistive effect magnetic head and the magnetoresistive element film. The non-magnetic thin film has a pattern width substantially equal to the track width, the magnetoresistive element film and the second soft magnetic thin film each have a pattern width wider than the track width, and A magnetoresistive effect magnetic head having a structure having regions contacting each other outside a track width.
及び前記磁気抵抗素子膜は、順次に積層されていること
を特徴とする請求項３記載の磁気抵抗効果型磁気ヘッ
ド。4. The magnetoresistive effect magnetic head according to claim 3, wherein the second soft magnetic thin film, the non-magnetic thin film, and the magnetoresistive element film are sequentially stacked.
膜と第２の軟磁性薄膜が非磁性薄膜を介して対向配置さ
れており、該第２の軟磁性薄膜の磁化により該磁気抵抗
素子膜に横バイアス磁界を与える構造の磁気抵抗効果型
磁気ヘッドにおいて、 前記磁気抵抗素子膜上に前記非磁性薄膜及び反強磁性薄
膜をそれぞれ設けると共に、該非磁性薄膜及び反強磁性
薄膜上に前記第２の軟磁性薄膜を設け、該非磁性薄膜は
該磁気抵抗効果型磁気ヘッドのトラック幅にほぼ等しい
パターン幅を有し、該磁気抵抗素子膜及び該第２の軟磁
性薄膜はそれぞれ前記トラック幅よりも広いパターン幅
を有する構造としたことを特徴とする磁気抵抗効果型磁
気ヘッド。5. A magnetoresistive element film composed of a first soft magnetic thin film and a second soft magnetic thin film are arranged so as to face each other with a nonmagnetic thin film interposed therebetween, and the magnetoresistive element is magnetized by the magnetization of the second soft magnetic thin film. In a magnetoresistive effect magnetic head having a structure for applying a lateral bias magnetic field to an element film, the nonmagnetic thin film and the antiferromagnetic thin film are respectively provided on the magnetoresistive element film, and the nonmagnetic thin film and the antiferromagnetic thin film are provided with the nonmagnetic thin film. A second soft magnetic thin film is provided, the non-magnetic thin film has a pattern width substantially equal to the track width of the magnetoresistive effect magnetic head, and the magnetoresistive element film and the second soft magnetic thin film respectively have the track width. A magnetoresistive effect magnetic head having a structure having a wider pattern width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1264595A JPH08203034A (en) | 1995-01-30 | 1995-01-30 | Magnetoresistance type magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1264595A JPH08203034A (en) | 1995-01-30 | 1995-01-30 | Magnetoresistance type magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08203034A true JPH08203034A (en) | 1996-08-09 |
Family
ID=11811110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1264595A Pending JPH08203034A (en) | 1995-01-30 | 1995-01-30 | Magnetoresistance type magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08203034A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01119913A (en) * | 1987-07-09 | 1989-05-12 | Internatl Business Mach Corp <Ibm> | Magnetic reading converter |
-
1995
- 1995-01-30 JP JP1264595A patent/JPH08203034A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01119913A (en) * | 1987-07-09 | 1989-05-12 | Internatl Business Mach Corp <Ibm> | Magnetic reading converter |
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