JPH08201844A - Active matrix display element - Google Patents
Active matrix display elementInfo
- Publication number
- JPH08201844A JPH08201844A JP1308495A JP1308495A JPH08201844A JP H08201844 A JPH08201844 A JP H08201844A JP 1308495 A JP1308495 A JP 1308495A JP 1308495 A JP1308495 A JP 1308495A JP H08201844 A JPH08201844 A JP H08201844A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- tft
- shielding layer
- light shielding
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は薄膜トランジスタ（以
下、ＴＦＴという）を備えたアクティブマトリックス表
示素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix display device having a thin film transistor (hereinafter referred to as TFT).
【０００２】[0002]
【従来の技術】近年平面ディスプレイ等の画像表示素子
への応用を目的とした薄膜トランジスタ（ＴＦＴ）の開
発が活発に行われている。ディスプレイの高精細化、ま
たは投射型ディスプレイのライトバルブへの応用に対応
するためＴＦＴの下層（ＴＦＴと基板との間）に遮光層
を備える必要が生じてきた。2. Description of the Related Art In recent years, thin film transistors (TFTs) have been actively developed for application to image display devices such as flat displays. It has become necessary to provide a light shielding layer in the lower layer of the TFT (between the TFT and the substrate) in order to respond to the high definition of the display or the application to the light valve of the projection type display.
【０００３】[0003]
【発明の解決しようとする課題】適当な膜厚で遮光層と
して十分な遮光性能を持つ材料としては現状では金属を
用いる場合がほとんどである。導電体である金属の遮光
層をＴＦＴの下層に配置した場合、その電位がＴＦＴの
動作に与える影響を軽減するため遮光層とＴＦＴ間に十
分な厚さの絶縁膜を設ける必要がある。従来この絶縁膜
は酸化シリコン膜、窒化シリコン膜等をプラズマＣＶＤ
等の真空装置により成膜していたが、必要な膜厚が大き
いため成膜に時間がかかり生産性が低下し、装置コスト
が高くなるという問題があった。At present, in most cases, a metal is used as a material having an appropriate film thickness and sufficient light-shielding performance as a light-shielding layer. When a light shielding layer made of a metal, which is a conductor, is arranged below the TFT, it is necessary to provide an insulating film having a sufficient thickness between the light shielding layer and the TFT in order to reduce the influence of the potential on the operation of the TFT. Conventionally, this insulating film is formed by plasma CVD of a silicon oxide film, a silicon nitride film, or the like.
Although the film was formed by a vacuum device such as the above, there is a problem that the film formation takes a long time because the required film thickness is large, the productivity is lowered, and the device cost is increased.
【０００４】[0004]
【課題を解決するための手段】本発明は上記の問題点を
解決すべくなされたものであり、基板と薄膜トランジス
タの間に導電性の遮光層を備えたアクティブマトリック
ス表示素子において、前記遮光層と前記薄膜トランジス
タとの間に含フッ素脂肪族環構造を有する重合体からな
る絶縁層を有することを特徴とするアクティブマトリッ
クス表示素子を提供する。The present invention has been made to solve the above-mentioned problems, and in an active matrix display device having a conductive light-shielding layer between a substrate and a thin film transistor, the light-shielding layer There is provided an active matrix display device including an insulating layer made of a polymer having a fluorine-containing alicyclic structure between the thin film transistor.
【０００５】含フッ素脂肪族環構造を有する重合体とし
ては、含フッ素環構造を有するモノマーを重合して得ら
れるものや少なくとも２つの重合性二重結合を有する含
フッ素モノマーを環化重合して得られる主鎖に環構造を
有する重合体が好ましい。The polymer having a fluorinated alicyclic structure is obtained by polymerizing a monomer having a fluorinated cyclic structure or a fluorinated monomer having at least two polymerizable double bonds is subjected to cyclopolymerization. A polymer having a ring structure in the obtained main chain is preferable.
【０００６】含フッ素環構造を有するモノマーを重合し
て得られる主鎖に環構造を有する重合体は，特公昭６３
−１８９６４号公報などにより知られている。すなわ
ち、パーフルオロ（２，２−ジメチル−１，３−ジオキ
ソール）などの含フッ素環構造を有する重合体を単独重
合ないし、テトラフルオロエチレンなどのラジカル重合
性モノマーと共重合することにより得られる。A polymer having a ring structure in its main chain obtained by polymerizing a monomer having a fluorine-containing ring structure is disclosed in Japanese Examined Patent Publication No. 63-63.
No. 18964, for example. That is, it is obtained by homopolymerizing a polymer having a fluorine-containing ring structure such as perfluoro (2,2-dimethyl-1,3-dioxole) or by copolymerizing with a radical polymerizable monomer such as tetrafluoroethylene.
【０００７】少なくとも２つの重合性二重結合を有する
含フッ素モノマーを環化重合して得られる主鎖に環構造
を有する重合体は、特開昭６３−２３８１１１号公報や
特開昭６３−２３８１１５号公報などにより知られてい
る。すなわち、パーフルオロ（アリルビニルエーテル）
やパーフルオロ（ブテニルビニルエーテル）等のモノマ
ーの環化重合、またはテトラフルオロエチレンなどのラ
ジカル重合性モノマーと共重合することにより得られ
る。Polymers having a ring structure in the main chain obtained by cyclopolymerization of a fluorine-containing monomer having at least two polymerizable double bonds are disclosed in JP-A-63-238111 and 63-238115. It is known from the official gazette. That is, perfluoro (allyl vinyl ether)
It is obtained by cyclopolymerization of a monomer such as or perfluoro (butenyl vinyl ether), or copolymerization with a radical polymerizable monomer such as tetrafluoroethylene.
【０００８】また、パーフルオロ（２，２−ジメチル−
１，３−ジオキソール）などの含フッ素環構造を有する
モノマーとパーフルオロ（アリルビニルエーテル）やパ
ーフルオロ（ブテニルビニルエーテル）などの少なくと
も２つの重合性二重結合を有する含フッ素モノマーを共
重合して得られる重合体でもよい。Further, perfluoro (2,2-dimethyl-
1,3-dioxole) and other fluorine-containing ring structure-containing monomers and perfluoro (allyl vinyl ether) and perfluoro (butenyl vinyl ether) at least two polymerizable double bond-containing fluorine-containing monomers The polymer obtained may be used.
【０００９】含フッ素脂肪族環構造を有する重合体は、
主鎖に環構造を有する重合体が好適であり、環構造を有
するモノマーが重合した単位を重合体中に２０モル％以
上含有するものが透明性、機械的特性等の面から好まし
い。The polymer having a fluorine-containing alicyclic structure is
A polymer having a ring structure in its main chain is preferable, and a polymer containing a unit in which a monomer having a ring structure is polymerized in an amount of 20 mol% or more is preferable in terms of transparency and mechanical properties.
【００１０】含フッ素脂肪族環構造を有する重合体には
重合体の密着性を改良するためにハロゲン原子、ヒドロ
キシル基、アルコキシ基、アルコキシ置換アルコキシ
基、ヒドロキシアルキルオキシ基、アシルオキシ基、ア
ミノオキシ基、ケトオキシム基、アミノ基、アミド基な
ど反応性の高い基を導入することが好ましい。The polymer having a fluorine-containing alicyclic structure has a halogen atom, a hydroxyl group, an alkoxy group, an alkoxy-substituted alkoxy group, a hydroxyalkyloxy group, an acyloxy group and an aminooxy group in order to improve the adhesion of the polymer. It is preferable to introduce a highly reactive group such as a ketoxime group, an amino group or an amide group.
【００１１】アルコキシシラン類、アミノ基、アミノフ
ェニル基またはエポキシ基を有するアルコキシシラン類
などのシランカップリング剤を含フッ素脂肪族環構造を
有する重合体と併用することにより重合体の密着性を改
良することもできる。Adhesion of the polymer is improved by using a silane coupling agent such as alkoxysilanes, alkoxysilanes having an amino group, an aminophenyl group or an epoxy group together with a polymer having a fluorine-containing alicyclic structure. You can also do it.
【００１２】本発明において、含フッ素脂肪族環構造を
有する重合体からなる絶縁膜は生産性の良い手段で成膜
することができる。この重合体はフッ素系溶剤に可溶で
あるため、溶液をコーティングすることにより膜形成が
容易になし得る。膜厚は通常０．１〜２μｍの範囲から
選択される。In the present invention, the insulating film made of a polymer having a fluorinated alicyclic structure can be formed by a means with good productivity. Since this polymer is soluble in a fluorine-based solvent, a film can be easily formed by coating the solution. The film thickness is usually selected from the range of 0.1 to 2 μm.
【００１３】フッ素系溶剤としては、含フッ素芳香族炭
化水素類、含フッ素脂環族炭化水素類、含フッ素アルキ
ルアミン類、含フッ素環状エーテル類、含フッ素ポリエ
ーテル類、含フッ素ケトン類または含フッ素脂肪族炭化
水素類などの非プロトン性含フッ素溶媒を単独でまたは
２種類以上の混合物として使用できる。また、含フッ素
アルコール類、含フッ素カルボン酸類、含フッ素カルボ
ン酸類のアミドまたは含フッ素スルホン酸類などのプロ
トン性含フッ素溶媒を単独でまたは２種類以上の混合物
として使用できる。重合体溶液の粘度を低下させたりゲ
ル化を防ぐためには非プロトン性含フッ素溶媒とプロト
ン性含フッ素溶媒の混合使用が有効である。Fluorine-based solvents include fluorinated aromatic hydrocarbons, fluorinated alicyclic hydrocarbons, fluorinated alkylamines, fluorinated cyclic ethers, fluorinated polyethers, fluorinated ketones and fluorinated ketones. Aprotic fluorine-containing solvents such as fluoroaliphatic hydrocarbons can be used alone or as a mixture of two or more kinds. Further, protic fluorine-containing solvents such as fluorine-containing alcohols, fluorine-containing carboxylic acids, amides of fluorine-containing carboxylic acids or fluorine-containing sulfonic acids can be used alone or as a mixture of two or more kinds. In order to reduce the viscosity of the polymer solution and prevent gelation, it is effective to use a mixture of an aprotic fluorine-containing solvent and a protic fluorine-containing solvent.
【００１４】コーティング方法には特に制約はなく、ス
ピンコート法、スプレーコート法、ダイコート法、カー
テンフローコート法、ディップコート法などを例示でき
る。これらのコーティング装置は、従来の酸化シリコン
膜、窒化シリコン膜等を形成するプラズマＣＶＤなどの
真空装置と比較してきわめて安価であり、また生産性に
優れている。The coating method is not particularly limited, and spin coating method, spray coating method, die coating method, curtain flow coating method, dip coating method and the like can be exemplified. These coating apparatuses are extremely inexpensive and excellent in productivity as compared with conventional vacuum apparatuses such as plasma CVD for forming a silicon oxide film, a silicon nitride film and the like.
【００１５】本発明において、含フッ素脂肪族環構造を
有する重合体は、表面張力が小さいフッ素系溶剤に可溶
であるために、溶液のコーティングにより均一で平坦な
薄膜が容易に得られる。In the present invention, the polymer having a fluorinated alicyclic structure is soluble in a fluorinated solvent having a small surface tension, so that a uniform and flat thin film can be easily obtained by coating with a solution.
【００１６】この重合体は含フッ素重合体であるため
に、きわめて低い誘電率、高い電気絶縁性を有し、耐熱
性を備えている。したがって、導電性遮光層の電位のＴ
ＦＴへの影響を低減でき、またＴＦＴ形成プロセスに耐
えうる。また重合体であるために無機膜と比較して内部
応力が小さい。したがって、１〜２μｍ程度の厚膜にし
てもクラックが入ることはなく、ＴＦＴ形成プロセスへ
の影響は小さい。Since this polymer is a fluorine-containing polymer, it has an extremely low dielectric constant, high electric insulation and heat resistance. Therefore, the potential T of the conductive light-shielding layer is
The influence on the FT can be reduced and the TFT formation process can be endured. Further, since it is a polymer, the internal stress is smaller than that of the inorganic film. Therefore, even if the film has a thickness of about 1 to 2 μm, cracks do not occur, and the influence on the TFT formation process is small.
【００１７】含フッ素脂肪族環構造を有する重合体から
なる絶縁膜上に酸化シリコン膜、酸化タンタル膜などの
無機膜を成膜した後ＴＦＴを形成することにより、ＴＦ
Ｔ形成は通常のガラス基板上の場合と同等のプロセスで
行うことができる。この場合の無機膜は１０〜２００ｎ
ｍの厚さで十分であり、通常のＴＦＴプロセス装置で生
産性よく成膜できる。TF is formed by forming an inorganic film such as a silicon oxide film or a tantalum oxide film on an insulating film made of a polymer having a fluorine-containing alicyclic structure and then forming a TFT.
T formation can be performed by a process similar to that on a normal glass substrate. In this case, the inorganic film is 10 to 200n
A thickness of m is sufficient, and a film can be formed with good productivity by a normal TFT process device.
【００１８】ガラス、セラミックなどの基板上に真空蒸
着法、スパッタリング法などによりクロム、タンタル、
アルミニウムなどの単層または多層膜からなる遮光層を
形成する。その上に含フッ素脂肪族環構造を有する重合
体からなる絶縁膜を形成し、さらにプラズマＣＶＤ、ス
パッタリング、減圧ＣＶＤ、常圧ＣＶＤ、またはゾルゲ
ル法などによりＳｉＯx 、ＳｉＮx 、ＳｉＯx Ｎy 、Ｔ
ａＯx などの単層または多層膜からなるパッシベーショ
ン膜を形成する。以降通常のプロセスでＴＦＴを形成す
ればよい。On a substrate such as glass or ceramic, chromium, tantalum,
A light shielding layer made of a single layer or a multilayer film of aluminum or the like is formed. An insulating film made of a polymer having a fluorinated alicyclic structure is formed thereon, and further SiO x , SiN x , SiO x N y is formed by plasma CVD, sputtering, low pressure CVD, normal pressure CVD, or a sol-gel method. T
A passivation film made of a single layer or a multi-layer film such as aO x is formed. After that, the TFT may be formed by a normal process.
【００１９】本発明の表示素子は、ＴＦＴを備えたもの
であればなんら限定されず、液晶表示素子、エレクトロ
クロミック表示素子、エレクトロルミネッセンス表示素
子などの表示素子として有用である。The display device of the present invention is not limited as long as it has a TFT, and is useful as a display device such as a liquid crystal display device, an electrochromic display device, an electroluminescence display device and the like.
【００２０】[0020]
【実施例】本発明の実施例を具体的に説明するが、本発
明はこれらに限定されない。EXAMPLES Examples of the present invention will be specifically described, but the present invention is not limited thereto.
【００２１】「合成例１」パーフルオロ（ブテニルビニ
ルエーテル）の３５ｇ、イオン交換水の１５０ｇ、およ
び重合開始剤として（（ＣＨ3 ）2 ＣＨＯＣＯＯ）2 の
９０ｍｇを、内容積２００ｍｌの耐圧ガラス製オートク
レーブに入れた。系内を３回窒素で置換した後、４０℃
で２２時間懸濁重合を行い、重合体を２８ｇ得た（以
下、この重合体を重合体Ａという）。重合体Ａの固有粘
度［η］は、パーフルオロ（２−ブチルテトラヒドロフ
ラン）中３０℃で０．５０であった。重合体Ａのガラス
転移点は１０８℃であり、室温ではタフで透明なガラス
状の重合体であった。また１０％熱分解温度は４６５℃
であり、光線透過率は９５％以上と高く、誘電率は２．
１と低かった。続いて、重合体Ａをパーフルオロトリブ
チルアミンに７重量％で溶解した溶液を作成した（以
下、この溶液を溶液Ａという）。[Synthesis Example 1] 35 g of perfluoro (butenyl vinyl ether), 150 g of ion-exchanged water, and 90 mg of ((CH 3 ) 2 CHOCOO) 2 as a polymerization initiator were put in a pressure-resistant glass autoclave having an internal volume of 200 ml. I put it in. After replacing the system with nitrogen three times, 40 ° C
The suspension polymerization was carried out for 22 hours to obtain 28 g of a polymer (hereinafter, this polymer is referred to as polymer A). The intrinsic viscosity [η] of the polymer A was 0.50 in perfluoro (2-butyltetrahydrofuran) at 30 ° C. The glass transition point of the polymer A was 108 ° C., and it was a tough and transparent glassy polymer at room temperature. The 10% thermal decomposition temperature is 465 ° C.
The light transmittance is as high as 95% or more, and the dielectric constant is 2.
It was as low as 1. Subsequently, a solution was prepared by dissolving the polymer A in perfluorotributylamine at 7% by weight (hereinafter, this solution is referred to as solution A).
【００２２】「合成例２」パーフルオロ（２，２−ジメ
チル−１，３ジオキソール）とパーフルオロ（ブテニル
ビニルエーテル）をラジカル共重合し、ガラス転移点１
６０℃の共重合体を得た（以下、この共重合体を共重合
体Ｂという）。この共重合体Ｂは無色透明であり、光線
透過率は９５％以上と高く、誘電率は２．０と低かっ
た。続いて共重合体Ｂをパーフルオロトリブチルアミン
に７重量％で溶解した溶液を作成した（以下、この溶液
を溶液Ｂという）。"Synthesis Example 2" Radical copolymerization of perfluoro (2,2-dimethyl-1,3dioxole) and perfluoro (butenyl vinyl ether) was carried out to give a glass transition point 1
A copolymer at 60 ° C. was obtained (hereinafter, this copolymer is referred to as copolymer B). This copolymer B was colorless and transparent, had a high light transmittance of 95% or more and a low dielectric constant of 2.0. Subsequently, a solution was prepared by dissolving the copolymer B in perfluorotributylamine at 7% by weight (hereinafter, this solution is referred to as a solution B).
【００２３】「実施例１」ガラス基板（旭硝子製ＡＮ６
３５）上にスパッタリング法により７５ｎｍ厚のクロム
膜を成膜し、遮光層としてパターン化した。合成例１で
得た溶液Ａをスピンコート法で塗布し、続いて３５０℃
でキュアを行った。膜厚は１．０μｍであった。[Example 1] Glass substrate (AN6 manufactured by Asahi Glass Co., Ltd.
A chromium film having a thickness of 75 nm was formed on the film 35) by a sputtering method and patterned as a light shielding layer. Solution A obtained in Synthesis Example 1 was applied by spin coating, followed by 350 ° C.
I did a cure in. The film thickness was 1.0 μm.
【００２４】プラズマＣＶＤ法により１５０ｎｍ厚の酸
化シリコン膜による下地膜および１００ｎｍ厚の非晶質
シリコン層を基板温度３００℃で積層し、さらに３５０
℃で反射防止膜として５０ｎｍ厚の窒化シリコン膜を成
膜した後、９Ｗのアルゴンイオンレーザー光を約１００
μｍ径に集光、約１２ｍ／ｓの速度で走査照射し、非晶
質シリコンの多結晶化を行った。A base film made of a silicon oxide film having a thickness of 150 nm and an amorphous silicon layer having a thickness of 100 nm are laminated at a substrate temperature of 300 ° C. by a plasma CVD method and further 350
After forming a 50 nm thick silicon nitride film as an antireflection film at ℃, 9 W of argon ion laser light is applied to about 100
Amorphous silicon was polycrystallized by condensing to a μm diameter and performing scanning irradiation at a speed of about 12 m / s.
【００２５】３５０℃・１時間の熱処理の後、反射防止
膜を除去し、多結晶シリコンを島状にパターン化し、通
常のプロセスによりトップゲートコプレーナ構造の多結
晶シリコンＴＦＴを形成した。プロセスの最高温度は３
５０℃である。遮光層上の絶縁膜の一部に開口部を設
け、適当な電位を与えて駆動することにより、従来より
良好なＴＦＴ特性で動作し、得られた液晶パネルの画質
も良好であった。After heat treatment at 350 ° C. for 1 hour, the antireflection film was removed, the polycrystalline silicon was patterned into an island shape, and a polycrystalline silicon TFT having a top gate coplanar structure was formed by an ordinary process. Maximum process temperature is 3
50 ° C. By providing an opening in a part of the insulating film on the light-shielding layer and driving by applying an appropriate potential, the liquid crystal panel operated with better TFT characteristics than the conventional one and the image quality of the obtained liquid crystal panel was also good.
【００２６】「実施例２」ガラス基板上にスパッタリン
グ法により７５ｎｍ厚のクロム膜を成膜し、遮光層とし
てパターン化した。合成例２で得た溶液Ｂをスピンコー
ト法で塗布し、さらにＳｉＯ2 被膜形成用塗布液をスピ
ンコート法で塗布し、続いて３５０℃でキュアを行っ
た。膜厚はそれぞれ０．５μｍ、０．３μｍであった。Example 2 A chromium film having a thickness of 75 nm was formed on a glass substrate by a sputtering method and patterned as a light shielding layer. The solution B obtained in Synthesis Example 2 was applied by a spin coating method, a coating solution for forming a SiO 2 film was further applied by a spin coating method, and subsequently, curing was performed at 350 ° C. The film thickness was 0.5 μm and 0.3 μm, respectively.
【００２７】プラズマＣＶＤ法により５０nm厚の窒化シ
リコン膜による下地膜および１００ｎｍ厚の非晶質シリ
コン層および反射防止膜として５０ｎｍ厚の窒化シリコ
ン膜を基板温度３００℃で積層し、４５０℃で熱処理し
た後、９Ｗのアルゴンイオンレーザー光を約１００μｍ
径に集光し、約１２ｍ／ｓの速度で走査照射し、非晶質
シリコンの多結晶化を行った。A base film made of a silicon nitride film having a thickness of 50 nm, an amorphous silicon layer having a thickness of 100 nm, and a silicon nitride film having a thickness of 50 nm as an antireflection film were laminated at a substrate temperature of 300 ° C. by a plasma CVD method and heat-treated at 450 ° C. After that, a 9 W argon ion laser beam is applied to about 100 μm.
Amorphous silicon was polycrystallized by focusing on a diameter and scanning and irradiating at a speed of about 12 m / s.
【００２８】３５０℃・１時間の熱処理の後、反射防止
膜を除去し、多結晶シリコンを島状にパターン化し、通
常のプロセスによりトップゲートコプレーナ構造の多結
晶シリコンＴＦＴを形成した。遮光層上の絶縁膜の窓あ
け工程を省略し遮光層の電位はフロートとしたが従来と
同等のＴＦＴ特性を得た。After heat treatment at 350 ° C. for 1 hour, the antireflection film was removed, the polycrystalline silicon was patterned into an island shape, and a polycrystalline silicon TFT having a top gate coplanar structure was formed by an ordinary process. Although the windowing process of the insulating film on the light shielding layer was omitted and the potential of the light shielding layer was floated, the TFT characteristics equivalent to the conventional one were obtained.
【００２９】[0029]
【発明の効果】本発明によれば、ＴＦＴの下層に金属の
遮光層を用いた場合でも遮光層の電位の影響を小さくす
ることができ、良好な画質の表示素子が得られる。また
その効果を生産性の良いプロセスで実現できる。According to the present invention, even when a metal light-shielding layer is used as a lower layer of a TFT, the influence of the potential of the light-shielding layer can be reduced, and a display element with good image quality can be obtained. Moreover, the effect can be realized by a process with good productivity.
Claims (2)
光層を備えたアクティブマトリックス表示素子におい
て、前記遮光層と前記薄膜トランジスタとの間に含フッ
素脂肪族環構造を有する重合体からなる絶縁層を有する
ことを特徴とするアクティブマトリックス表示素子。1. An active matrix display device having a conductive light-shielding layer between a substrate and a thin film transistor, wherein an insulating layer made of a polymer having a fluorine-containing alicyclic structure is provided between the light-shielding layer and the thin film transistor. An active matrix display device having.
多結晶半導体薄膜トランジスタである請求項１のアクテ
ィブマトリックス表示素子。2. The active matrix display element according to claim 1, wherein the thin film transistor is a top gate type polycrystalline semiconductor thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308495A JPH08201844A (en) | 1995-01-30 | 1995-01-30 | Active matrix display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308495A JPH08201844A (en) | 1995-01-30 | 1995-01-30 | Active matrix display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08201844A true JPH08201844A (en) | 1996-08-09 |
Family
ID=11823311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1308495A Pending JPH08201844A (en) | 1995-01-30 | 1995-01-30 | Active matrix display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08201844A (en) |
-
1995
- 1995-01-30 JP JP1308495A patent/JPH08201844A/en active Pending
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