JPH08195314A - Thin film magnetic material - Google Patents
Thin film magnetic materialInfo
- Publication number
- JPH08195314A JPH08195314A JP1974495A JP1974495A JPH08195314A JP H08195314 A JPH08195314 A JP H08195314A JP 1974495 A JP1974495 A JP 1974495A JP 1974495 A JP1974495 A JP 1974495A JP H08195314 A JPH08195314 A JP H08195314A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- same
- magnetic material
- film magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【技術分野】本発明は、大きな磁気光学効果と大きな一
軸性異方性の両方の特徴を兼ね備えた薄膜磁性材料の分
野に関する。TECHNICAL FIELD The present invention relates to the field of a thin film magnetic material having both a large magneto-optical effect and a large uniaxial anisotropy.
【０００２】[0002]
【従来技術】ＰｔＭｎＳｂの磁気光学効果が大きいこと
は良く知られている。しかしながら、光磁気記録媒体と
して使用するには垂直磁化膜である必要があるが、It is well known that PtMnSb has a large magneto-optical effect. However, it is necessary to use a perpendicular magnetization film to use it as a magneto-optical recording medium.
【数１】 であり薄膜にした時に垂直磁化膜とはならない。希土類
−遷移金属アモルファス合金膜では磁気光学効果の大き
な膜と垂直磁気異方性の大きな膜の交換結合２層膜によ
る特性改善が提案されている。ＰｔＭｎＳｂの場合にも
垂直磁気異方性の大きな希土類−遷移金属アモルファス
合金膜との２層膜が提案されているが、この場合、２層
間の交換結合力事態があまり大きなものは期待できず、
静磁力による結合に関しては、ＰｔＭｎＳｂの磁化が希
土類−遷移金属アモルファス合金膜よりも大きく、希土
類−遷移金属アモルファス合金膜によってＰｔＭｎＳｂ
の磁化方向を決定するのは不可能とおもわれる。一方、
Ｍｎ系の磁性材料の中にはＣｕ2Ｓｂ型（Ｐ４／ｎｍ
ｎ）正方晶系の結晶構造を有するものが、一軸磁気異方
性を示す可能性があり、Ａｌ、Ｍｇ、Ｇｅ等はＣ軸方向
に磁化容易軸が有り、膜面に対して垂直方向にＣ軸を配
向させることにより垂直磁化膜が得られている。そこで
これらの膜とＰｔＭｎＳｂ系の膜とを積層させることに
より、ＰｔＭｎＳｂ系膜と希土類−遷移金属アモルファ
ス合金膜間の交換結合力よりは大きな交換力が期待でき
る。但し、２層膜では充分な磁気特性を示す程度の膜厚
にすると各層の磁気特性が個別に現れ、一方の層の磁化
方向に他方の層の磁化方向を完全に揃えることは不可能
となってくる。逆に、磁性膜全体としての膜厚を薄くす
ると薄膜内の磁化方向を均一に揃えることは可能かもし
れないが、ｓｕｐｅｒ−ｐａｒａｍａｇｎｅｔｉｓｍ等
の影響により、充分な磁気特性は示さなくなる。近年、
薄膜作製技術の発展とともに、ＭＢＥ等の技術を使うこ
とにより、これまで作製不可能であった結晶構造の薄膜
も作製可能となり、全く新しい特性を持つ材料の研究も
盛んになりつつある。[Equation 1] Therefore, when it is made into a thin film, it does not become a perpendicular magnetization film. In the rare earth-transition metal amorphous alloy film, it has been proposed to improve the characteristics of the film having a large magneto-optical effect and the film having a large perpendicular magnetic anisotropy by an exchange coupling two-layer film. In the case of PtMnSb as well, a two-layer film with a rare earth-transition metal amorphous alloy film having a large perpendicular magnetic anisotropy has been proposed, but in this case, a situation in which the exchange coupling force between the two layers is too large cannot be expected,
Regarding the coupling by the static magnetic force, the magnetization of PtMnSb is larger than that of the rare earth-transition metal amorphous alloy film, and PtMnSb is formed by the rare earth-transition metal amorphous alloy film.
It seems impossible to determine the magnetization direction of. on the other hand,
Cu 2 Sb type (P4 / nm
n) Those having a tetragonal crystal structure may exhibit uniaxial magnetic anisotropy, and Al, Mg, Ge, etc. have an easy axis of magnetization in the C-axis direction and are perpendicular to the film surface. A perpendicular magnetization film is obtained by orienting the C axis. Therefore, by stacking these films and a PtMnSb-based film, a larger exchange force than the exchange-coupling force between the PtMnSb-based film and the rare earth-transition metal amorphous alloy film can be expected. However, in a two-layer film, if the film thickness is such that sufficient magnetic characteristics are exhibited, the magnetic characteristics of each layer appear individually, and it becomes impossible to completely align the magnetization direction of one layer with the magnetization direction of the other layer. Come on. On the contrary, if the thickness of the magnetic film as a whole is reduced, it may be possible to make the magnetization directions in the thin film uniform, but due to the influence of super-paramagnetism, sufficient magnetic characteristics will not be exhibited. recent years,
With the development of thin film manufacturing technology, it has become possible to manufacture a thin film having a crystal structure, which has been impossible to manufacture by using the technology such as MBE, and research on materials having completely new characteristics is becoming active.
【０００３】[0003]
【目的】本発明は、例えば大きな磁気光学効果と大きな
一軸性磁気異方性の両方の特性を兼ね備える様な、これ
までにバルクでは存在しなかった全く新しい磁性薄膜材
料の提供を目的とする。It is an object of the present invention to provide a completely new magnetic thin film material which has not been present in bulk until now, but which has both properties of a large magneto-optical effect and a large uniaxial magnetic anisotropy.
【０００４】[0004]
【構成】本発明の第１は、（α層−α層−β層）の繰り
返し単位（以下、Ａ周期という）を１回以上繰り返した
もの（Ａｎ1）と（α層−β層）の繰り返し単位（以
下、Ｂ周期という）を１回以上繰り返したもの（Ｂｎ
2）である周期構造（Ａｎ1＋Ｂｎ2）を複数周期積層し
て形成された薄膜磁性材料。 Ａｎ1：Ａ周期を１回以上繰り返したもの Ｂｎ2：Ｂ周期を１回以上繰り返したもの ｎ1：Ａ周期の繰り返し数で、１以上の数で、好ましく
は１〜１００ ｎ2：Ｂ周期の繰り返し数で、１以上の数で、好ましく
は１〜１００ α層：ＭIとＭIIからなる単原子層 β層：ＭIIIからなる単原子層であって、α層のＭIとＭ
IIを合わせた原子密度と同じ原子密度を有する層 ＭI：Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｎ、ＮｉおよびＺｎ
よりなる群から選ばれた少なくとも１種以上の元素。 ＭII：Ａｓ、Ｂｉ、Ｇｅ、Ｐｂ、Ｓｂ、Ｓｉ、Ｓｎ、Ａ
ｌ、ＧａおよびＩｎよりなる群から選ばれた少なくとも
１種以上の元素。 ＭIII：Ａｇ、Ａｕ、Ｃｕ、Ａｌ、Ｍｏ、Ｎｂ、Ｐｄ、
Ｐｔ、Ｒｈ、Ｚｒ、Ｎｉ、Ｃｏ、ＦｅおよびＭｎよりな
る群から選ばれた少なくとも１種以上の元素。 前記薄膜磁性材料において、Ａ周期を１回以上繰り返し
たもの（Ａｎ1）はＣｕ2Ｓｂ型結晶構造に近い周期構造
となる可能性が高く、またＢ周期を１回以上繰り返した
もの（Ｂｎ2）はＬ２1型結晶構造に近い周期構造となる
可能性が高いが、但しＡｎ1とＢｎ2はこれら結晶構造の
ものに限定されるものではない。またＡ周期で（Ｘ1＋
Ｘ2）配置−（Ｘ2＋Ｘ1）配置−Ｚ配置の繰り返しで堆
積するとＣｕ2Ｓｂ型結晶構造をとり、Ｂ周期で（Ｘ1＋
Ｘ2）配置−Ｚ配置−（Ｘ2＋Ｘ1）配置−Ｚ配置の繰り
返しで堆積するとＬ２1（Ｆｍ３ｍ）型結晶構造をと
る。ここで、前記Ｘ1配置、Ｘ2配置、Ｙ1配置、Ｙ2配置
およびＺ配置は、直交座標系の原子配列において、座標
面に平行な面でスライスしたときの原子配置として、図
１に示すような配置を示す。ただし、格子歪等により厳
密には原子の位置がずれることがある。また各原子層を
一定周期で堆積していく場合には、これらの原子配置を
規則的に繰り返して堆積するのがエネルギー的に安定と
なる。前記（Ｘ1＋Ｘ2）配置とは、ＭIがＸ1配置で、Ｍ
IIがＸ2配置を示す。また、（Ｘ2＋Ｘ1）配置とは、ＭI
がＸ2配置で、ＭIIがＸ1配置を示す。Ａ周期Ｃｕ2Ｓｂ
型結晶構造をとるべき元素を選択し、Ｂ周期にＬ２1型
結晶構造をとるべき元素を選択した場合でも、２種類の
異質な構造が周期的に積層されていることで、結晶的に
歪みが発生して全く新しい特性を示す。特に結晶的に歪
みが磁気異方性に与える影響は大きく、ｎ1、ｎ2、ｎ3
および／またはＭI、ＭII、ＭIIIの元素の組み合わせに
よりこの歪みをコントロ−ルすることで全く新しい垂直
磁化膜を得ることも可能である。[Structure] The first aspect of the present invention is to repeat (An1) and (α layer-β layer) in which a repeating unit (hereinafter referred to as A cycle) of (α layer-α layer-β layer) is repeated one or more times. A unit (hereinafter referred to as B cycle) repeated one or more times (Bn
2) A thin film magnetic material formed by laminating a plurality of periodic structures (An1 + Bn2). An1: A cycle repeated one or more times Bn2: B cycle repeated one or more times n1: A cycle repeated number, 1 or more, preferably 1 to 100 n2: B cycle repeated number 1 or more, preferably 1 to 100 α layer: monoatomic layer consisting of M I and M II β layer: monoatomic layer consisting of M III , wherein M I and M of α layer
Layer having the same atomic density as the combined atomic density of II M I : Co, Cr, Cu, Fe, Mn, Ni and Zn
At least one element selected from the group consisting of: M II : As, Bi, Ge, Pb, Sb, Si, Sn, A
At least one element selected from the group consisting of 1, Ga and In. M III : Ag, Au, Cu, Al, Mo, Nb, Pd,
At least one element selected from the group consisting of Pt, Rh, Zr, Ni, Co, Fe and Mn. Among the above thin film magnetic materials, the one in which the A cycle is repeated one or more times (An1) is highly likely to have a periodic structure close to the Cu 2 Sb type crystal structure, and the one in which the B cycle is repeated one or more times (Bn2) is L2 is likely to be closer periodic structure 1 type crystal structure, provided An1 and Bn2 is not intended to be limited to these crystal structures. In cycle A (X1 +
X2) configuration- (X2 + X1) configuration-Z configuration is repeated to form a Cu 2 Sb type crystal structure, and (X 1 +
When deposited by repeating the X2) arrangement-Z arrangement- (X2 + X1) arrangement-Z arrangement, an L2 1 (Fm3m) type crystal structure is obtained. Here, the X1 arrangement, X2 arrangement, Y1 arrangement, Y2 arrangement and Z arrangement are the arrangements shown in FIG. 1 as atomic arrangements when sliced in a plane parallel to the coordinate plane in the atomic arrangement of the orthogonal coordinate system. Indicates. However, strictly speaking, the atomic positions may be displaced due to lattice distortion or the like. In addition, when each atomic layer is deposited at a constant cycle, it is energetically stable to repeatedly deposit these atomic arrangements regularly. The (X1 + X2) arrangement means that M I is the X1 arrangement and M
II indicates the X2 configuration. The (X2 + X1) arrangement means M I
Indicates the X2 configuration and M II indicates the X1 configuration. Period A Cu 2 Sb
Even when an element that should have a L-type crystal structure is selected and an element that should have an L2 1 -type crystal structure in the B cycle is selected, the two types of heterogeneous structures are cyclically stacked, which results in crystal distortion. Occurs and shows a completely new characteristic. In particular, the influence of crystal distortion on magnetic anisotropy is large, and n1, n2, n3
It is also possible to obtain a completely new perpendicular magnetization film by controlling this strain by combining the elements of M I , M II and M III .
【０００５】本発明の第２は、Ａｎ1と（α層−γ層）
の繰り返し単位（以下、Ｃ周期という）を１回以上繰り
返したもの（Ｃｎ3）よりなる周期構造（Ａｎ1＋Ｃｎ
3）を複数周期積層して形成された薄膜磁性材料に関す
る。 Ｃｎ3 ：Ｃ周期を１回以上繰り返したもの ｎ3 ：Ｃ周期の繰り返し数で、１以上の数、好ましく
は１〜１００ α層 ：前記に同じ γ層 ：ＭIIIからなる単原子層であって、α層のＭIと
ＭIIを合わせた原子密度の半分の原子密度の単原子層 前記薄膜磁性材料において、Ｃ周期で（Ｘ1＋Ｘ2）配置
−Ｙ１配置−（Ｘ2＋Ｘ1−Ｙ2）配置の繰り返しで堆積
するとＣ1ｂ型結晶構造をとるので、該薄膜磁性材料は
Ｃｕ2Ｓｂ型結晶構造の磁性材料とＣ1ｂ型結晶構造の複
合的なものとなる。The second aspect of the present invention is that An1 and (α layer-γ layer)
A periodic structure (An1 + Cn) consisting of a repeating unit (hereinafter referred to as C cycle) repeated one or more times (Cn3).
3) A thin film magnetic material formed by laminating a plurality of cycles of. Cn3: one in which the C cycle is repeated one or more times n3: the number of repetitions in the C cycle, which is a number of 1 or more, preferably 1 to 100 α layer: the same as the above γ layer: a monoatomic layer consisting of M III , in monoatomic layer wherein the thin film magnetic material of half atomic density of M I and M II the combined atomic density of α layer, the C period (X1 + X2) arranged -Y1 disposed - (X2 + X1-Y 2 ) depositing a repeating arrangement Then since taking C1b type crystal structure, the thin film magnetic material becomes a composite of magnetic material and C1b crystal structure of Cu 2 Sb type crystal structure.
【０００６】本発明の第３は、Ｂｎ2とＣｎ3よりなる周
期構造（Ｂｎ2＋Ｃｎ3）を複数周期積層して形成された
薄膜磁性材料に関する。 Ｂｎ2：前記に同じ Ｃｎ3：前記に同じ ｎ2：前記に同じ ｎ3：前記に同じ 前記薄膜磁性材料はＬ２1型結晶構造の磁性材料とＣ1ｂ
型結晶構造の複合的なものとなる。A third aspect of the present invention relates to a thin film magnetic material formed by laminating a plurality of periodic structures (Bn2 + Cn3) composed of Bn2 and Cn3. Bn2: the same Cn3: the same n2: the same n3: the same the thin film magnetic material in said magnetic material of L2 1 crystal structure C1b
It becomes a complex type crystal structure.
【０００７】本発明の第４は、Ａｎ1とＢｎ2とＣｎ3よ
りなる周期構造（Ａｎ1＋Ｂｎ2＋Ｃｎ3）を複数周期積
層して形成された薄膜磁性材料に関する。 Ａｎ1：前記に同じ Ｂｎ2：前記に同じ Ｃｎ3：前記に同じ ｎ1：前記に同じ ｎ2：前記に同じ ｎ3：前記に同じ 前記薄膜磁性材料は、Ａｎ1とＢｎ2とＣｎ3（Ａｎ1＋Ｂ
ｎ2＋Ｃｎ3）を複数周期積層Ｃｕ2Ｓｂ型結晶構造の磁
性材料とＣ1ｂ型結晶構造の複合的なものとなる。 Ａｎ1：前記に同じ Ｂｎ2：前記に同じ Ｃｎ3：前記に同じ ｎ1：前記に同じ ｎ2：前記に同じ ｎ3：前記に同じA fourth aspect of the present invention relates to a thin film magnetic material formed by laminating a plurality of periodic structures (An1 + Bn2 + Cn3) composed of An1, Bn2 and Cn3. An1: Same as above Bn2: Same as above Cn3: Same as above n1: Same as above n2: Same as above n3: Same as above The thin film magnetic material includes An1, Bn2 and Cn3 (An1 + B).
n2 + Cn3) is a composite of a magnetic material having a Cu 2 Sb type crystal structure and a C 1b type crystal structure having a plurality of laminated cycles. An1: Same as above Bn2: Same as above Cn3: Same as above n1: Same as above n2: Same as above n3: Same as above
【０００８】本発明の第５は、前記第１、２、３または
４記載の薄膜磁性材料において、ｎ1又はｎ2、ｎ3の異
なるものを少なくとも２種以上積層したことを特徴とす
る薄膜磁性材料に関する。 ｎ1：前記に同じ ｎ2：前記に同じ ｎ3：前記に同じ 前記薄膜磁性材料において、ｎ1又はｎ2、ｎ3の異なる
ものを少なくとも２種以上積層し、繰り返し周期の数を
変えることにより、膜厚方向に意識的に不均一性を持た
せて、層方向に特性を変化させた薄膜磁性材料を得るこ
とが出来る。A fifth aspect of the present invention relates to a thin film magnetic material according to the first, second, third or fourth aspect, characterized in that at least two kinds of thin film magnetic materials different in n1, n2 and n3 are laminated. . n1: same as above n2: same as above n3: same as above In the thin film magnetic material, at least two kinds of n1 or n2 or n3 different from each other are laminated and the number of repeating cycles is changed to thereby change the thickness direction. It is possible to obtain a thin film magnetic material whose properties are changed in the layer direction by intentionally providing nonuniformity.
【０００９】本発明の第６は、前記第１、２、３または
４記載の薄膜磁性材料において、ＭI又はＭII、ＭIIIの
異なるものを少なくとも２種以上積層したことを特徴と
する薄膜磁性材料に関する。 ＭI ：前記に同じ ＭII ：前記に同じ ＭIII ：前記に同じ 前記薄膜磁性材料において、ＭI又はＭII、ＭIIIの異な
るものを少なくとも２種以上積層し、繰り返し周期の数
は、一定で、各層を構成する元素の種類あるいは比を変
えることにより、膜厚方向に意識的に不均一性を持たせ
て、層方向に特性を変化させた薄膜磁性材料を得ること
が出来る。なお本発明の薄膜磁性材料は、前記第５の手
段と第６の手段を組合せて形成したものであってもよ
い。A sixth aspect of the present invention is characterized in that, in the thin film magnetic material according to the first, second, third or fourth aspect, at least two or more different types of M I or M II , M III are laminated. Regarding magnetic materials. M I : same as above M II : same as above M III : same as above In the thin film magnetic material, at least two kinds of M I or M II and M III different from each other are laminated, and the number of repeating cycles is constant. Then, by changing the kind or ratio of the elements forming each layer, it is possible to obtain a thin film magnetic material in which the characteristics are changed in the layer direction by intentionally providing nonuniformity in the film thickness direction. The thin film magnetic material of the present invention may be formed by combining the fifth means and the sixth means.
【００１０】本発明の第７は、前記第１、２、３または
４記載のの薄膜磁性材料の少なくとも２種以上積層した
ことを特徴とする薄膜磁性材料に関する。前記第１、
２、３または４記載のの薄膜磁性材料の少なくとも２種
以上積層することにより、前記第５および６の薄膜磁性
材料と同様に、膜厚方向に意識的に不均一性を持たせ
て、層方向に特性を変化させた薄膜磁性材料を得ること
が出来る。A seventh aspect of the present invention relates to a thin film magnetic material characterized by laminating at least two kinds of the thin film magnetic materials according to the first, second, third or fourth aspect. The first,
By laminating at least two kinds of the thin film magnetic materials described in 2, 3 or 4, the layers are made to have intentionally non-uniformity in the film thickness direction as in the fifth and sixth thin film magnetic materials. It is possible to obtain a thin film magnetic material whose characteristics are changed in the direction.
【００１１】本発明の第８は、正方晶系の［１００］面
または［１１０］面単結晶配向膜、あるいは正方晶系の
［１００］面、［１１０］面または［００１］面単結晶
配向膜の基板上に形成した請求項１、２、３、４、５、
６または７記載の薄膜磁性材料に関する。前記単結晶基
板上に前記薄膜磁性材料を形成することにより、その作
製に際して、結晶配向させることが容易となり、また、
膜作製開始時点での原子の配列（結晶化）がスムーズに
なり、膜の結晶性の向上、膜作製温度を低下させること
ができる。The eighth aspect of the present invention is a tetragonal [100] plane or [110] plane single crystal orientation film, or a tetragonal [100] plane, [110] plane or [001] plane single crystal orientation film. Claims 1, 2, 3, 4, 5, formed on a film substrate.
The present invention relates to the thin film magnetic material described in 6 or 7. By forming the thin film magnetic material on the single crystal substrate, it becomes easy to orient the crystal during its production, and
The atom arrangement (crystallization) at the start of film formation becomes smooth, the crystallinity of the film can be improved, and the film formation temperature can be lowered.
【００１２】本発明の第９は、ガラスあるいはプラスチ
ック基板上に立方晶系の［１００］面または［１１０］
面単結晶配向膜、あるいは正方晶系の［１００］面、
［１１０］面または［００１］面単結晶配向膜を下地層
としてその上に作製したことを特徴とする前記第１、
２、３、４、５、６または７記載の薄膜磁性材料に関す
る。単結晶基板を作製した場合、その上に作製した膜は
単結晶的な結晶構造となり、磁気特性も単結晶的になる
傾向があるが、ガラスあるいはプラスチック等の基板上
に前記のような下地層を作製し、更にその上に前記磁性
膜を作製することで、膜は多結晶となり、多結晶として
の磁気特性が得られる。また、単結晶磁性膜では磁壁移
動が容易に起こり、保磁力の低下など、磁気記録材料と
して不適切な場合もあるが、多結晶膜では磁壁移動は抑
制され、保磁力の大きなものが得られる。また、多結晶
膜では形状異方性等も期待できる。さらに前記のような
下地層を設けることにより高価な単結晶基板を使用する
必要はなくコストも下げることが出来る。A ninth aspect of the present invention is the cubic [100] face or [110] face on a glass or plastic substrate.
Plane single crystal orientation film, or tetragonal [100] plane,
The first aspect characterized in that a [110] plane or [001] plane single crystal orientation film is formed as an underlayer thereon.
The present invention relates to the thin film magnetic material described in 2, 3, 4, 5, 6 or 7. When a single crystal substrate is prepared, the film formed on it has a single crystal-like crystal structure, and the magnetic characteristics tend to be single crystal, but the above-mentioned underlayer on a substrate such as glass or plastic. Is produced, and the magnetic film is further formed thereon, so that the film becomes polycrystalline and the magnetic characteristics as polycrystalline are obtained. Further, in a single-crystal magnetic film, domain wall movement easily occurs, which may be unsuitable as a magnetic recording material, such as a decrease in coercive force, but in a polycrystalline film, domain wall movement is suppressed and a large coercive force can be obtained. . Moreover, shape anisotropy and the like can be expected in the polycrystalline film. Further, by providing the above-mentioned base layer, it is not necessary to use an expensive single crystal substrate, and the cost can be reduced.
【００１３】本発明の第１０は、前記第１、２、３、
４、５、６、７、８または９記載の薄膜磁性材料を製造
する方法において、磁性材料を各単原子層ずつ堆積して
薄膜形成を行うことを特徴とする薄膜磁性材料の製造方
法に関する。前記のように単原子層ずつ堆積することに
より薄膜形成を行うと、原子の配列（結晶化）がスム−
ズとなり、膜膜の結晶性の向上、膜作製温度の低下が可
能となる。A tenth aspect of the present invention is the first, second, third,
The method for producing a thin film magnetic material according to 4, 5, 6, 7, 8 or 9 relates to a method for producing a thin film magnetic material, which comprises depositing each monoatomic layer of a magnetic material to form a thin film. When a thin film is formed by depositing each monoatomic layer as described above, the atomic arrangement (crystallization) is smooth.
It is possible to improve the crystallinity of the film and lower the film forming temperature.
【００１４】本発明の第１１は、前記第１、２、３、
４、５、６、７、８または９記載の薄膜磁性材料を製造
する方法において、各周期毎にその周期の平均組成に見
合った混合物を同時に堆積して薄膜形成を行うことを特
徴とする薄膜磁性材料の製造方法。前記のような製造方
法を採用することにより、比較的簡単な装置で膜作成が
可能となり、量産に適し、コストダウンにつながる。The eleventh aspect of the present invention is the first, second, third,
In the method for producing a thin film magnetic material described in 4, 5, 6, 7, 8 or 9, a thin film is formed by simultaneously depositing a mixture corresponding to the average composition of each period for each period. Manufacturing method of magnetic material. By adopting the manufacturing method as described above, it becomes possible to form a film with a relatively simple apparatus, which is suitable for mass production and leads to cost reduction.
【００１５】[0015]
１．請求項１の発明に対する効果 Ｃｕ2Ｓｂ型結晶構造の磁性材料の特性とＬ２1型結晶構
造の磁性材料の特性を兼ね備えた複合材料的なものが得
られる。 ２．請求項２の発明に対する効果：Ｃｕ2Ｓｂ型結晶構
造の磁性材料とＣ1ｂ型結晶構造の特性を兼ね備えた複
合材料的なものが得られる。 ３．請求項３の発明に対する効果：Ｌ２1型結晶構造の
磁性材料とＣ1ｂ型結晶構造の特性を兼ね備えた複合材
料的なものが得られる。 ４．請求項４の発明に対する効果 Ｃｕ2Ｓｂ型結晶構造の磁性材料の特性とＬ２1型結晶構
造の特性とＣ1ｂ型結晶構造の磁性材料の特性を兼ね備
えた複合材料的なものが得られる。 ５．請求項５、６および７の発明に対する効果 基板側の界面付近の特性と膜表面側の特性、或は、膜全
体としての特性と基板側の界面付近の特性又は膜表面側
の特性に変化を付けることができる。例えば、基板側又
は表面側を特にカー回転角の大きな材料の構成にするこ
とで、全体的な特性は変えずに、基板側又は表面側から
読みだしたカー回転角だけを増大させることが可能とな
る。又、交換結合多層膜としての機能が得られる。 ６．請求項８の発明に対する効果：作製に際して、結晶
配向させることが容易となり、また、膜作製開始時点で
の原子の配列（結晶化）がスムーズになり、膜の結晶性
の向上、膜作製温度を低下させることができる。 ７．請求項９の発明に対する効果 前記のような下地層を作製し、更にその上に前記磁性膜
を作製することで、膜は多結晶となり、多結晶としての
磁気特性が得られる。また、単結晶磁性膜では磁壁移動
が容易に起こり、保磁力の低下など、磁気記録材料とし
て不適切な場合もあるが、多結晶膜では磁壁移動は抑制
され、保磁力の大きなものが得られる。また、多結晶膜
では形状異方性等も期待できる。さらに前記のような下
地層を設けることにより高価な単結晶基板を使用する必
要はなくコストも下げることが出来る。 ８．請求項１０の発明に対する効果 単原子層ずつ堆積を行うことにより、原子の配列（結晶
化）がスムーズになり、膜の結晶性の向上、膜作製温度
の低下の効果が得られる。 ９．請求項１１の発明に対する効果：請求項１０の発明
と同様の効果が得られる。その効果としては、請求項９
の発明よりはやや劣ることがあるが、比較的簡単な装置
で膜作製が可能となり、量産に適し、コストダウンにつ
ながる。1. Effect on the Invention of Claim 1 A composite material having the characteristics of the magnetic material having the Cu 2 Sb type crystal structure and the characteristics of the magnetic material having the L 2 1 type crystal structure can be obtained. 2. Effect on Invention of Claim 2: A magnetic material having a Cu 2 Sb type crystal structure and a composite material having the characteristics of a C 1b type crystal structure are obtained. 3. Effect on the invention of claim 3: L2 1 type composite ones that combines the properties of the magnetic material and C1b crystal structure of the crystal structure is obtained. 4. Effect on Invention of Claim 4 A composite material having both the characteristics of the magnetic material having the Cu 2 Sb type crystal structure, the characteristics of the L 2 1 type crystal structure and the characteristics of the magnetic material having the C 1b type crystal structure can be obtained. 5. Effects on the Invention of Claims 5, 6 and 7 The characteristics near the interface on the substrate side and the characteristics on the film surface side, or the characteristics of the entire film and the characteristics near the interface on the substrate side or the characteristics on the film surface side are changed. Can be attached. For example, by making the substrate side or the surface side a material having a particularly large Kerr rotation angle, it is possible to increase only the Kerr rotation angle read from the substrate side or the surface side without changing the overall characteristics. Becomes Further, the function as an exchange coupling multilayer film can be obtained. 6. Effect on invention of claim 8: Crystallographic orientation becomes easy at the time of production, and atoms are aligned (crystallized) smoothly at the time of starting film production, improving the crystallinity of the film and improving film production temperature. Can be lowered. 7. Effect on Invention of Claim 9 By forming the underlayer as described above and further forming the magnetic film on the underlayer, the film becomes polycrystalline and magnetic characteristics as polycrystalline are obtained. Further, in a single-crystal magnetic film, domain wall movement easily occurs, which may be unsuitable as a magnetic recording material, such as a decrease in coercive force, but in a polycrystalline film, domain wall movement is suppressed and a large coercive force can be obtained. . Moreover, shape anisotropy and the like can be expected in the polycrystalline film. Further, by providing the above-mentioned base layer, it is not necessary to use an expensive single crystal substrate, and the cost can be reduced. 8. Effect of the Invention of Claim 10 By depositing each monoatomic layer, the arrangement (crystallization) of atoms becomes smooth, and the effects of improving the crystallinity of the film and lowering the film formation temperature can be obtained. 9. Effect of the invention of claim 11: The same effect as that of the invention of claim 10 can be obtained. As its effect, claim 9
Although it may be slightly inferior to the invention of (1), the film can be formed with a relatively simple apparatus, is suitable for mass production, and leads to cost reduction.
【図１】本発明の薄膜磁性材料の膜面内の原子配置を示
す図である。ただし、格子歪等により厳密には原子の位
置がずれることがある。FIG. 1 is a diagram showing an atomic arrangement in a film surface of a thin film magnetic material of the present invention. However, strictly speaking, the atomic positions may be displaced due to lattice distortion or the like.
Claims (11)
（以下、Ａ周期という）を１回以上繰り返したもの（Ａ
ｎ1）と（α層−β層）の繰り返し単位（以下、Ｂ周期
という）を１回以上繰り返したもの（Ｂｎ2）よりなる
周期構造（Ａｎ1＋Ｂｎ2）を複数周期積層して形成され
た薄膜磁性材料。 Ａｎ1：Ａ周期を１回以上繰り返したもの Ｂｎ2：Ｂ周期を１回以上繰り返したもの ｎ1：Ａ周期の繰り返し数で、１以上の数 ｎ2：Ｂ周期の繰り返し数で、１以上の数 α層：ＭIとＭIIからなる単原子層 β層：ＭIIIからなる単原子層であって、α層のＭIとＭ
IIを合わせた原子密度と同じ原子密度を有する層、 ＭI：Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｎ、ＮｉおよびＺｎ
よりなる群から選ばれた少なくとも１種以上の元素、 ＭII：Ａｓ、Ｂｉ、Ｇｅ、Ｐｂ、Ｓｂ、Ｓｉ、Ａｌ、Ｇ
ａおよびＩｎよりなる群から選ばれた少なくとも１種以
上の元素、 ＭIII：Ａｇ、Ａｕ、Ｃｕ、Ａｌ、Ｍｏ、Ｎｂ、Ｐｄ、
Ｐｔ、Ｒｈ、Ｚｒ、Ｎｉ、Ｃｏ、ＦｅおよびＭｎよりな
る群から選ばれた少なくとも１種以上の元素。1. A repeating unit of (α layer-α layer-β layer) (hereinafter referred to as A cycle) repeated one or more times (A
A thin film magnetic material formed by laminating a plurality of periodic structures (An1 + Bn2) composed of a repeating unit (Bn2) in which a repeating unit of (n1) and (α layer-β layer) (hereinafter referred to as B period) is repeated one or more times. An1: A cycle repeated one or more times Bn2: B cycle repeated one or more times n1: A cycle repeated number 1 or more n2: B cycle repeated number 1 or more α layer : Monoatomic layer consisting of M I and M II β layer: Monoatomic layer consisting of M III , M I and M of α layer
A layer having the same atomic density as II combined, M I : Co, Cr, Cu, Fe, Mn, Ni and Zn
At least one element selected from the group consisting of: M II : As, Bi, Ge, Pb, Sb, Si, Al, G
at least one element selected from the group consisting of a and In, M III : Ag, Au, Cu, Al, Mo, Nb, Pd,
At least one element selected from the group consisting of Pt, Rh, Zr, Ni, Co, Fe and Mn.
（以下、Ｃ周期という）を１回以上繰り返したもの（Ｃ
ｎ3）よりなる周期構造（Ａｎ1＋Ｃｎ3）を複数周期積
層して形成された薄膜磁性材料。 Ｃｎ3 ：Ｃ周期を１回以上繰り返したもの ｎ3 ：Ｃ周期の繰り返し数で、１以上の数 α層 ：前記に同じ γ層 ：ＭIIIからなる単原子層であって、α層のＭIと
ＭIIを合わせた原子密度の半分の原子密度の単原子層2. A repeating unit (C period) of An1 and (α layer-γ layer) repeated one or more times (C
A thin film magnetic material formed by laminating a plurality of periodic structures (An1 + Cn3) of n3). Cn3: C cycle repeated once or more n3: C cycle repetition number of 1 or more α layer: Same as above γ layer: Monoatomic layer consisting of M III , which is the M I of α layer Monoatomic layer with half the atomic density of M II combined
＋Ｃｎ3）を複数周期積層して形成された薄膜磁性材
料。 Ｂｎ2：前記に同じ Ｃｎ3：前記に同じ ｎ2 ：前記に同じ ｎ3 ：前記に同じ3. A periodic structure composed of Bn2 and Cn3 (Bn2
+ Cn3) is a thin film magnetic material formed by laminating a plurality of cycles. Bn2: same as above Cn3: same as above n2: same as above n3: same as above
（Ａｎ1＋Ｂｎ2＋Ｃｎ3）を複数周期積層して形成され
た薄膜磁性材料。 Ａｎ1：前記に同じ Ｂｎ2：前記に同じ Ｃｎ3：前記に同じ ｎ1 ：前記に同じ ｎ2 ：前記に同じ ｎ3 ：前記に同じ4. A thin film magnetic material formed by laminating a plurality of periodic structures (An1 + Bn2 + Cn3) composed of An1, Bn2 and Cn3. An1: Same as above Bn2: Same as above Cn3: Same as above n1: Same as above n2: Same as above n3: Same as above
性材料において、ｎ1又はｎ2、ｎ3の異なるものを少な
くとも２種以上積層したことを特徴とする薄膜磁性材
料。 ｎ1 ：前記に同じ ｎ2 ：前記に同じ ｎ3 ：前記に同じ5. The thin film magnetic material according to claim 1, 2, 3 or 4, wherein at least two kinds of materials having different n1 or n2 and n3 are laminated. n1: same as above n2: same as above n3: same as above
性材料において、ＭI又はＭII、ＭIIIの異なるものを少
なくとも２種以上積層したことを特徴とする薄膜磁性材
料。 ＭI ：前記に同じ ＭII ：前記に同じ ＭIII：前記に同じ6. The thin film magnetic material according to claim 1, 2, 3 or 4, wherein at least two kinds of materials having different M I or M II , M III are laminated. M I : same as above M II : same as above M III : same as above
磁性材料の少なくとも２種以上積層したことを特徴とす
る薄膜磁性材料。7. A thin film magnetic material comprising at least two kinds of thin film magnetic materials according to claim 1, 2, 3 or 4 laminated.
０］面単結晶配向膜、あるいは正方晶系の［１００］
面、［１１０］面または［００１］面単結晶配向膜の基
板上に形成した請求項１、２、３、４、５、６または７
記載の薄膜磁性材料。8. A cubic [100] plane or [11]
0] plane single crystal orientation film or tetragonal [100]
A surface, a [110] plane, or a [001] plane single crystal orientation film formed on a substrate.
The thin film magnetic material described.
方晶系の［１００］面または［１１０］面単結晶配向
膜、あるいは正方晶系の［１００］面、［１１０］面ま
たは［００１］面単結晶配向膜を下地層としてその上に
形成したことを特徴とする請求項１、２、３、４、５、
６または７記載の薄膜磁性材料。9. A cubic [100] plane or [110] plane single crystal oriented film or a tetragonal [100] plane, [110] plane or [001] plane single crystal on a glass or plastic substrate. An alignment film is formed as a base layer on the alignment film, and the alignment film is formed on the alignment film.
6. The thin film magnetic material according to 6 or 7.
８または９記載の薄膜磁性材料を製造する方法におい
て、磁性材料を各単原子層ずつ堆積して薄膜形成を行う
ことを特徴とする薄膜磁性材料の製造方法。10. The method according to claim 1, 2, 3, 4, 5, 6, 7,
8. The method for producing a thin film magnetic material as described in 8 or 9, wherein each monoatomic layer of the magnetic material is deposited to form a thin film.
８または９記載の薄膜磁性材料を製造する方法におい
て、各周期毎にその周期の平均組成に見合った混合物を
同時に堆積して薄膜形成を行うことを特徴とする薄膜磁
性材料の製造方法。11. The method according to claim 1, 2, 3, 4, 5, 6, 7,
8. The method for producing a thin film magnetic material according to 8 or 9, wherein a thin film is formed by simultaneously depositing a mixture corresponding to the average composition of the period for each period.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1974495A JPH08195314A (en) | 1995-01-12 | 1995-01-12 | Thin film magnetic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1974495A JPH08195314A (en) | 1995-01-12 | 1995-01-12 | Thin film magnetic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08195314A true JPH08195314A (en) | 1996-07-30 |
Family
ID=12007851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1974495A Pending JPH08195314A (en) | 1995-01-12 | 1995-01-12 | Thin film magnetic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08195314A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002015206A1 (en) * | 2000-08-02 | 2002-02-21 | Sumitomo Special Metals Co., Ltd. | Thin film rare earth permanent magnet, and method for manufacturing the permanent magnet |
-
1995
- 1995-01-12 JP JP1974495A patent/JPH08195314A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002015206A1 (en) * | 2000-08-02 | 2002-02-21 | Sumitomo Special Metals Co., Ltd. | Thin film rare earth permanent magnet, and method for manufacturing the permanent magnet |
| EP1329912A1 (en) * | 2000-08-02 | 2003-07-23 | Sumitomo Special Metals Company Limited | Thin film rare earth permanent magnet, and method for manufacturing the permanent magnet |
| EP1329912A4 (en) * | 2000-08-02 | 2005-09-21 | Sumitomo Spec Metals | Thin film rare earth permanent magnet, and method for manufacturing the permanent magnet |
| US7285338B2 (en) | 2000-08-02 | 2007-10-23 | Neomax Co., Ltd. | Anisotropic thin-film rare-earth permanent magnet |
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