JPH0817708A - Method and apparatus for exfoliation of resin film as well as mask and manufacture of semiconductor device - Google Patents
Method and apparatus for exfoliation of resin film as well as mask and manufacture of semiconductor deviceInfo
- Publication number
- JPH0817708A JPH0817708A JP14650294A JP14650294A JPH0817708A JP H0817708 A JPH0817708 A JP H0817708A JP 14650294 A JP14650294 A JP 14650294A JP 14650294 A JP14650294 A JP 14650294A JP H0817708 A JPH0817708 A JP H0817708A
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- ultraviolet light
- resist
- duv
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は樹脂膜剥離方法及びそれ
に用いる装置と、前記樹脂膜剥離方法を用いたマスク及
び半導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin film peeling method and an apparatus used therefor, and a mask and semiconductor device manufacturing method using the resin film peeling method.
【０００２】近年、デバイスパターンの微細化及び高精
度化に伴い、デバイスの性能に悪影響を及ぼし問題とな
る欠陥サイズはより一層細かくなってきている。そのた
め、半導体装置やその製造に用いられるマスクの製造工
程では、上記欠陥の原因になる微細な異物（パーティク
ル）の発生を防止することが極めて重要になる。In recent years, as device patterns have become finer and more precise, the defect size, which adversely affects the performance of the device and becomes a problem, has become smaller. Therefore, in the manufacturing process of a semiconductor device or a mask used for manufacturing the same, it is extremely important to prevent the generation of fine foreign particles (particles) that cause the above defects.
【０００３】上記欠陥につながる異物の発生原因の一つ
に、マスクパターンやデバイスパターンのパターニング
マスクに用いるレジストの砕片（レジストダスト）があ
る。このレジストダストは、ガラスや半導体の基板上に
スピンコート法によりレジストを塗布した際、基板の周
辺部にレジストが厚く被着し、基板搬送時等における基
板のクランプでこの厚いレジストがフレーク状に欠け落
ちることによるもので、このレジストダストの発生を防
止することが前記マスク及び半導体装置を製造する際の
レジストプロセスにおいて重要な課題になっている。One of the causes of the generation of foreign matter that leads to the above defects is crushed pieces (resist dust) of a resist used for a patterning mask of a mask pattern or a device pattern. When resist is applied to a glass or semiconductor substrate by spin coating, the resist dust is deposited thickly on the peripheral portion of the substrate, and the thick resist becomes flakes when the substrate is clamped during transportation. Due to chipping off, preventing the generation of this resist dust has become an important issue in the resist process in manufacturing the mask and the semiconductor device.
【０００４】[0004]
【従来の技術】図５はレチクル（マスク）製造工程にお
ける乾板60のレジスト塗布後の状態を示す模式図で、図
５(a) は該乾板の平面図、図５(b) は同側面断面図を示
す。2. Description of the Related Art FIG. 5 is a schematic view showing a state of a dry plate 60 after resist coating in a reticle (mask) manufacturing process. FIG. 5 (a) is a plan view of the dry plate and FIG. The figure is shown.
【０００５】レチクル製造工程における乾板60は図５
(b) に示すように、ガラス基板51の表面に遮光膜として
のクロム層52が形成されており、その上に例えば厚さ 5
00nmのレジスト膜53が通常スピンコート法により設けら
れている。この形成方法に由来してレジスト膜53の周辺
から２〜５mm以内の周辺部54は厚く盛り上がり、最高が
1.5μｍ程度にまで達する。The dry plate 60 in the reticle manufacturing process is shown in FIG.
As shown in (b), a chromium layer 52 as a light-shielding film is formed on the surface of the glass substrate 51, and a chromium layer 52 having a thickness of, for example, 5 is formed thereon.
A resist film 53 of 00 nm is usually provided by spin coating. Due to this formation method, the peripheral portion 54 within 2 to 5 mm from the periphery of the resist film 53 is thickly swelled, and the maximum is
It reaches up to about 1.5 μm.
【０００６】この周辺部54の厚く盛り上がったレジスト
53P は、搬送あるいは露光等のために乾板をクランプす
る場合等において他の物体と接触することによってフレ
ーク状のダストとなって剥離し易く、このレジストダス
トは、乾板の状態ではレジスト表面に付着しているが、
露光の後、現像してレジスト膜53をパターニングした段
階においてレジストの除去された部分に付着し、該レジ
ストパターンをマスクにして行われるクロム層52のパタ
ーンエッチングの際にパターン欠陥を発生させるという
問題を生ずる。A thick and thick resist in the peripheral portion 54
The 53P easily comes off as flaky dust when it comes into contact with other objects when it is clamped for transport or exposure, and this resist dust adheres to the resist surface in the dry plate state. However,
After exposure, it adheres to the removed portion of the resist at the stage of developing and patterning the resist film 53, and causes a pattern defect in the pattern etching of the chrome layer 52 performed using the resist pattern as a mask. Cause
【０００７】そこで従来、レジストが遠紫外光の照射に
より分解して除去されることに着目し、ガラス基板上に
スピンコートによりレジスト膜を形成した後、レジスト
膜が被着された基板面に触れずに、ガラス基板の周辺部
のレジスト膜が厚く被着した領域に選択的に遠紫外光を
照射し、その部分のレジスト膜を除去する下記の装置を
用いたレジスト膜の選択的な剥離方法が開発され、これ
によって露光、搬送等に際してクランプされる周辺部の
レジスト膜を予め選択的に除去して上記問題を回避する
方法が提供された。（特開平０５−３３３５６４） 図６は上記レジスト膜を選択的に除去する機構を備え、
且つレジスト膜のスピンコート機構を兼ね備えた従来の
レジスト剥離装置の模式図である。In view of this, conventionally, focusing on the fact that a resist is decomposed and removed by irradiation with far-ultraviolet light, a resist film is formed on a glass substrate by spin coating, and then the surface of the substrate on which the resist film is deposited is touched. Instead, a method of selectively peeling the resist film using the following device for selectively irradiating the region where the resist film on the peripheral portion of the glass substrate is thickly irradiated with far-ultraviolet light and removing the resist film in that portion Has been developed, thereby providing a method for avoiding the above problem by selectively removing beforehand the resist film in the peripheral portion which is clamped during exposure, transportation, and the like. (Japanese Patent Laid-Open No. 05-333564) FIG. 6 includes a mechanism for selectively removing the resist film,
FIG. 7 is a schematic view of a conventional resist stripping apparatus that also has a spin coating mechanism for a resist film.
【０００８】図６において、１はガラス基板、２はクロ
ム(Cr)層、３はレジスト膜、４はレジスト膜の周辺部、
５は遠紫外光(DUV) ランプ、６は反射鏡、７は集光レン
ズ、８は遮光板、９はホットプレート、10は乾板、11は
遠紫外光投光器、23はスピンコータ、24は支持台、25は
レジスト注下用のノズル、26は搬送ロボットを示す。In FIG. 6, 1 is a glass substrate, 2 is a chromium (Cr) layer, 3 is a resist film, 4 is a peripheral portion of the resist film,
5 is a deep ultraviolet (DUV) lamp, 6 is a reflecting mirror, 7 is a condenser lens, 8 is a light blocking plate, 9 is a hot plate, 10 is a dry plate, 11 is a deep ultraviolet light projector, 23 is a spin coater, and 24 is a support stand. , 25 is a resist pouring nozzle, and 26 is a transfer robot.
【０００９】この装置を用いるレジスト剥離方法におい
ては、先ず乾板10をホットプレート９上に固定し、これ
をスピンコータ23の支持台24上に置く。そして、乾板10
のCr膜２上にレジスト膜３を、ノズル25からレジストを
供給しスピンコートして形成する。次いで、レジスト膜
３周辺部４の除去に際しては、搬送ロボット26によりホ
ットプレート９と共に乾板10を遠紫外光投光位置へ搬送
する。そして、ホットプレート９によりレジストのプリ
ベーク温度である例えば 200℃に保持しながらレジスト
周辺部４に５mm程度の幅で例えば 200mW/cm2の照度を有
する遠紫外光を100mm/min 程度の走査速度で順次照射
し、乾板10の周辺部のレジスト膜３を５mm程度の幅で選
択的に除去する。In the resist stripping method using this apparatus, first, the dry plate 10 is fixed on the hot plate 9 and placed on the support 24 of the spin coater 23. And dry plate 10
The resist film 3 is formed on the Cr film 2 by spin-coating the resist supplied from the nozzle 25. Next, when removing the peripheral portion 4 of the resist film 3, the transport plate 26 transports the dry plate 10 together with the hot plate 9 to the far ultraviolet light projecting position. Then, while maintaining the resist pre-baking temperature of, for example, 200 ° C. by the hot plate 9, a far-ultraviolet light having an illuminance of, for example, 200 mW / cm 2 with a width of about 5 mm is scanned around the resist peripheral portion 4 at a scanning speed of about 100 mm / min. The resist film 3 on the periphery of the dry plate 10 is selectively removed with a width of about 5 mm by sequentially irradiating.
【００１０】このようにして形成されたレジスト膜３を
表面に有する乾板10は、露光等に際してクランプされる
乾板10周辺部のレジスト膜４が予め除去されるので、レ
ジストダストの発生が防止されるという効果を生ずる。In the dry plate 10 having the resist film 3 formed on the surface as described above, the resist film 4 around the dry plate 10 which is clamped at the time of exposure or the like is removed in advance, so that the generation of resist dust is prevented. Produces the effect.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら上記従来
のレジスト剥離方法は、レジストの剥離速度が遅く、特
に乾板の周辺部にレジスト膜が厚く被着されている場
合、上記走査速度では該周辺部のレジストが十分に除去
されず、レジストダストの発生が完全に防止できないと
いう問題があり、更に走査速度を遅くしなければならな
かった。However, the above-mentioned conventional resist stripping method has a slow resist stripping rate, and particularly when the resist film is thickly deposited on the peripheral portion of the dry plate, the peripheral speed of the peripheral portion is increased at the above scanning speed. There is a problem that the resist is not sufficiently removed and the generation of resist dust cannot be completely prevented, and the scanning speed must be further reduced.
【００１２】そこで本発明は遠紫外光を用いるレジスト
剥離方法におけるレジストの剥離速度を向上させること
によって遠紫外光の走査速度を低下させずにレジスト膜
周辺部の剥離除去を完全にし、工程手番の増大を伴わず
に前記露光工程等において発生するレジストダストによ
る障害を完全に防止することを目的とする。Therefore, the present invention improves the resist stripping rate in the resist stripping method using deep ultraviolet light, thereby completely stripping and removing the peripheral portion of the resist film without lowering the scanning speed of the deep ultraviolet light. It is an object of the present invention to completely prevent an obstacle due to resist dust generated in the exposure step or the like without increasing the number of pixels.
【００１３】[0013]
【課題を解決するための手段】上記課題の解決は、被処
理基板上に被着された樹脂膜に集光した遠紫外光を連続
的に移動照射して該樹脂膜の該遠紫外光に照射された領
域を選択的に除去する樹脂膜剥離方法において、該遠紫
外光の照射と同時に、該遠紫外光に照射されている領域
にアシストガスを間欠的に吹きつけ該領域の雰囲気を間
欠的に変化せしめる本発明による樹脂膜剥離方法、若し
くは、被処理基板上に被着された樹脂膜に集光した遠紫
外光を連続的に移動照射して該樹脂膜の該遠紫外光に照
射された領域を選択的に除去する樹脂膜剥離方法におい
て、該遠紫外光の照射と同時に、該遠紫外光に照射され
ている領域に異なる種類のアシストガスを交互に吹きつ
け該領域の雰囲気を交互に変化せしめる本発明による樹
脂膜剥離方法、若しくは、移動ステージと、該移動ステ
ージ上に載置され樹脂膜を表面に有する被処理基板を搭
載加熱するホットプレートと、集光系を備え該樹脂膜の
一部領域上に遠紫外光を照射する遠紫外光照射機構と、
該遠紫外光が照射されている該一部領域に１種類のアシ
ストガスを間欠的に若しくは２種類以上のアシストガス
を交互に吹きつけるアシストガス吹きつけ機構とを有し
てなる本発明による樹脂膜剥離装置、若しくは、遮光膜
が形成されたガラス基板上にレジスト膜を塗布した後、
該レジスト膜にパターン露光を行う前に、該ガラス基板
周辺部上の該レジスト膜を前記請求項１、２または３記
載の樹脂膜剥離方法により選択的に除去する工程を有す
る本発明によるマスクの製造方法、若しくは、半導体基
板上にレジスト膜を塗布した後、該レジスト膜にパター
ン露光を行う前に、該半導体基板の周辺部上の該レジス
ト膜を前記請求項１、２または３記載の樹脂膜剥離方法
により選択的に除去する工程を有する本発明による半導
体装置の製造方法によって達成される。Means for Solving the Problems To solve the above-mentioned problems, the far-ultraviolet light focused on a resin film deposited on a substrate to be processed is continuously moved and irradiated to the far-ultraviolet light of the resin film. In the resin film peeling method of selectively removing the irradiated region, at the same time as the irradiation with the far ultraviolet light, an assist gas is intermittently blown to the region irradiated with the far ultraviolet light to intermittently create an atmosphere in the region. Or a method for peeling a resin film according to the present invention, or far ultraviolet light focused on a resin film deposited on a substrate to be processed is continuously moved and irradiated to the far ultraviolet light of the resin film. In the resin film peeling method of selectively removing the irradiated region, simultaneously with the irradiation of the far-ultraviolet light, different types of assist gases are alternately blown to the region irradiated with the far-ultraviolet light to create an atmosphere of the region. A method of peeling a resin film according to the present invention, which is changed alternately, In other words, a moving stage, a hot plate that mounts and heats a substrate to be processed that is placed on the moving stage and has a resin film on its surface, and a focusing system are provided, and far-ultraviolet light is emitted onto a partial region of the resin film. Far-UV light irradiation mechanism for irradiation,
A resin according to the present invention, which has an assist gas blowing mechanism for intermittently blowing one type of assist gas or alternately blowing two or more types of assist gas to the partial region irradiated with the far-ultraviolet light. A film peeling device, or after applying a resist film on a glass substrate on which a light-shielding film has been formed,
A mask according to the present invention comprising a step of selectively removing the resist film on the peripheral portion of the glass substrate by the resin film peeling method according to claim 1, 2 or 3 before performing pattern exposure on the resist film. 4. The resin according to claim 1, 2 or 3, wherein the resist film on the peripheral portion of the semiconductor substrate is formed by a manufacturing method or after applying a resist film on the semiconductor substrate and before performing pattern exposure on the resist film. This is achieved by the method for manufacturing a semiconductor device according to the present invention, which includes a step of selectively removing the film by a film peeling method.
【００１４】[0014]
【作用】波長が 200〜300nm 程度の遠紫外光を樹脂の例
えばレジストに照射すると、レジストは炭酸ガスと水と
に分解して除去されることが知られている。It is known that when a resin, eg, a resist, is irradiated with far-ultraviolet light having a wavelength of about 200 to 300 nm, the resist is decomposed into carbon dioxide gas and water and removed.
【００１５】しかしその際、遠紫外光の照射を例えば酸
素(O2)等の一定種類のアシストガスの雰囲気内で行う
と、時間の経過と共にレジスト表面が不活性になって上
記反応の速度が低下しレジストの剥離速度が遅くなる。However, at this time, if the irradiation with far-ultraviolet light is carried out in the atmosphere of a certain kind of assist gas such as oxygen (O 2 ) or the like, the resist surface becomes inactive with the passage of time and the above reaction rate increases. And the resist peeling speed becomes slow.
【００１６】そこで本発明の樹脂膜剥離方法において
は、例えば大気中で遠紫外光を照射してレジスト剥離を
行う際、遠紫外光の照射されている領域に大気と種類の
異なる１種類のアシストガスを間欠的に吹きつけるか、
あるいは種類の異なる２種類以上のアシストガスを交互
に吹きつけることにより該遠紫外光照射中の該領域のア
シストガスの雰囲気を交互に変化させてやる。Therefore, in the resin film stripping method of the present invention, for example, when the resist is stripped by irradiating deep ultraviolet light in the atmosphere, one type of assist different from the atmosphere in the area irradiated with the deep ultraviolet light. Blow gas intermittently,
Alternatively, the atmosphere of the assist gas in the region under irradiation with the far-ultraviolet light is alternately changed by alternately spraying two or more kinds of different assist gases.
【００１７】このようにすることにより、１種類のアシ
ストガス中で連続して照射される遠紫外光の照射時間は
ごく短時間に分割されるので、形成される不活性物質膜
の膜厚は極めて薄くなり、次の異なる種類のアシストガ
ス中における遠紫外光照射のステップで容易に剥離除去
される。By doing so, the irradiation time of the far-ultraviolet light continuously irradiated in one kind of assist gas is divided into a very short time, so that the thickness of the formed inert substance film is small. It becomes extremely thin and is easily peeled and removed in the next step of irradiation with far-ultraviolet light in different types of assist gases.
【００１８】従って、遠紫外光照射中、レジスト膜の表
面は不活性物質に覆われず常に活性なレジスト表出面と
なるため、前記アシストガス中での最大のレジストの剥
離レートが維持され、従来に比べてレジストの剥離速度
が大幅に向上する。Therefore, during irradiation with far-ultraviolet light, the surface of the resist film is not covered with an inactive substance and is always an active resist exposed surface, so that the maximum resist peeling rate in the assist gas is maintained, and the conventional resist peeling rate is maintained. Compared with, the peeling speed of the resist is significantly improved.
【００１９】従って、上記本発明に係る樹脂膜剥離方法
を適用して乾板あるいは半導体基板上にスピンコートさ
れたレジスト膜の周辺部を選択的に除去することによ
り、該乾板あるいは半導体基板がクランプされるそれら
の周辺部のレジスト膜は従来より短時間で完全に除去で
きるので、製造手番の短縮が図れると同時に、露光等に
際しての乾板あるいは半導体基板のクランプによるレジ
ストダストの発生は回避され、該レジストダストに起因
して生ずるマスクあるいは半導体装置のパターン欠陥は
防止される。Therefore, the dry plate or the semiconductor substrate is clamped by selectively removing the peripheral portion of the resist film spin-coated on the dry plate or the semiconductor substrate by applying the resin film peeling method according to the present invention. Since the resist film on those peripheral portions can be completely removed in a shorter time than in the conventional case, the production turn can be shortened, and at the same time, the generation of resist dust due to the clamp of the dry plate or the semiconductor substrate at the time of exposure etc. can be avoided. Pattern defects of the mask or semiconductor device caused by the resist dust are prevented.
【００２０】[0020]
【実施例】以下本発明を、図示実施例により具体的に説
明する。図１は本発明に係る樹脂膜剥離装置の一実施例
の要部模式図（その１）、図２は本発明に係る樹脂膜剥
離装置の一実施例の要部模式図（その２）、図３は本発
明の樹脂膜剥離方法の一実施例のタイムチャート、図４
は本発明の樹脂剥離方法の一実施例の工程断面図であ
る。全図を通じ同一対象物は同一符合で示す。EXAMPLES The present invention will be described in detail below with reference to illustrated examples. FIG. 1 is a schematic view of a main part of an embodiment of a resin film peeling apparatus according to the present invention (No. 1), FIG. 2 is a schematic view of a main part of an embodiment of a resin film peeling apparatus according to the present invention (No. 2), FIG. 3 is a time chart of an embodiment of the resin film peeling method of the present invention, and FIG.
FIG. 3 is a process cross-sectional view of one embodiment of the resin peeling method of the present invention. The same object is denoted by the same reference numeral throughout the drawings.
【００２１】本発明に係る樹脂膜剥離装置の剥離処理部
を示す図１の要部模式図（その１）において、１はガラ
ス基板、２はCr層、３はレジスト膜、４は該レジスト膜
の周辺部、５は遠紫外光(DUV) ランプ、６は反射鏡、７
は集光レンズ、８は遮光板、９はホットプレート、10は
乾板、11はDUV ランプ, 遠紫外光投光器, 反射鏡, 遮光
板, 集光レンズ等により構成された遠紫外光透光器、12
は光ファイバ、13はアシストガス噴出・排気ノズル、14
はアシストガス噴出ノズル、15は局所排気ノズル、16は
アシストガス供給管、17は排気配管、18は移動ステー
ジ、DUV は遠紫外光を示す。In the schematic view of the main part of FIG. 1 showing the peeling treatment section of the resin film peeling apparatus according to the present invention (No. 1), 1 is a glass substrate, 2 is a Cr layer, 3 is a resist film, 4 is the resist film. Peripheral area, 5 is a deep ultraviolet (DUV) lamp, 6 is a reflector, 7
Is a condenser lens, 8 is a light shield plate, 9 is a hot plate, 10 is a dry plate, 11 is a DUV lamp, a far ultraviolet light projector, a reflecting mirror, a light shield plate, a far ultraviolet light transmissive device including a condenser lens, 12
Is an optical fiber, 13 is an assist gas ejection / exhaust nozzle, 14
Is an assist gas ejection nozzle, 15 is a local exhaust nozzle, 16 is an assist gas supply pipe, 17 is an exhaust pipe, 18 is a moving stage, and DUV is far ultraviolet light.
【００２２】また、本発明に係る樹脂膜剥離装置のアシ
ストガス供給制御部を示す図２の要部模式図（その２）
において、16はアシストガス供給管、19A は第１の電磁
弁、19B は第２の電磁弁、20A は第１のアシストガス供
給管、20B は第２のアシストガス供給管、21A1、21A2、
21A3は流量計、22A1、22B1はO2が供給される流量調整バ
ルブ、22A2、22B2はO3が供給される流量調整バルブ、22
A3、22B3はN2が供給される流量調整バルブ、23はアシス
トガス制御部を示している。Further, a schematic view of a main part (part 2) of FIG. 2 showing an assist gas supply controller of the resin film peeling apparatus according to the present invention.
, 16 is an assist gas supply pipe, 19A is a first solenoid valve, 19B is a second solenoid valve, 20A is a first assist gas supply pipe, 20B is a second assist gas supply pipe, 21A 1 and 21A 2 ,
21A 3 is a flow meter, 22A 1 and 22B 1 are flow rate adjustment valves to which O 2 is supplied, 22A 2 and 22B 2 are flow rate adjustment valves to which O 3 is supplied, 22
A 3 and 22B 3 are flow rate control valves to which N 2 is supplied, and 23 is an assist gas control unit.
【００２３】例えば 125mm角のマスク製造において、２
種類のアシストガスO2とO3を用いる本発明の方法により
乾板上にスピンコートされたレジスト膜の周辺部を選択
的に除去する際には、前記図１及び図２に示した樹脂膜
剥離装置を用い、該装置に付属する従来装置（図６参
照）同様の図示されないスピンコータにより、ホットプ
レート９上搭載された状態で 125mm角のガラス基板１の
表面のCr層２上に厚さ 500nm程度のレジスト膜３をスピ
ンコートした後、このレジスト膜３を有する乾板10を、
ホットプレート９ごと移動ステージ18上に載置し、ホッ
トプレート９により 200℃程度に加熱し、その状態にお
いてステージ18を乾板10の辺に沿う方向に移動しながら
遠紫外光投光器11の集光レンズ７から放出される波長 2
00〜300nmの遠紫外光(DUV) を光ファイバ９を介しレジ
スト膜４の周辺部の５mm程度の幅の領域に照射し、且つ
前記ステージ18の移動に従ってレジスト膜３の周辺部を
５mm程度の幅で乾板10の辺に沿って順次連続的に照射し
て行く。そしてそれに並行して、レジスト膜３の前記遠
紫外光に照射されている部分を含む領域にアシストガス
噴出・排気ノズル13を介して異なる２種類のアシストガ
スのO2とO3を交互に吹きつけ、該遠紫外光に照射されて
いる領域の雰囲気をO2とO3に交互に切り換えてやる。こ
のアシストガスのO2とO3との交互吹きつけのガスの種
類、ガス流量、タイミング等の制御は、図２に示すアシ
ストガス供給制御部によってなされる。即ち、例えば第
１のアシストガス供給管20A 内にそれに接続された流量
調整バルブ22A1からO2を所定の流量に制御して供給し、
第２のアシストガス供給管20B 内にそれに接続された流
量調整バルブ22B2からO3を例えばO2と等しい所定の流量
に制御して供給し、アシストガス制御部23により第１の
電磁弁19A と第２の電磁弁19B を所定のタイミングで交
互に開閉し、アシストガス供給管16にO2とO3を所定のタ
イミングで交互に供給することによってなされる。For example, in manufacturing a 125 mm square mask, 2
When the peripheral portion of the resist film spin-coated on the dry plate is selectively removed by the method of the present invention using the assist gases O 2 and O 3 of various types, the resin film peeling shown in FIGS. Using a device, a spin coater (not shown) similar to the conventional device attached to the device (see FIG. 6) was used to mount it on the hot plate 9, and the thickness was about 500 nm on the Cr layer 2 on the surface of the 125 mm square glass substrate 1. After spin-coating the resist film 3 of, the dry plate 10 having the resist film 3 is
The hot plate 9 is placed on the moving stage 18 and heated to about 200 ° C. by the hot plate 9, and in that state, the stage 18 is moved in the direction along the side of the dry plate 10 and the condenser lens of the far-ultraviolet light projector 11. Wavelength 2 emitted from 7
Far-ultraviolet light (DUV) of 00 to 300 nm is radiated through the optical fiber 9 to an area having a width of about 5 mm in the peripheral portion of the resist film 4, and the peripheral portion of the resist film 3 is irradiated with about 5 mm in accordance with the movement of the stage 18. Irradiation is sequentially and continuously along the sides of the dry plate 10 in width. In parallel with this, two different kinds of assist gas O 2 and O 3 are alternately blown to the region of the resist film 3 including the portion irradiated with the far-ultraviolet light through the assist gas jetting / exhausting nozzle 13. Then, the atmosphere in the region irradiated with the far-ultraviolet light is switched to O 2 and O 3 alternately. The control of the type, gas flow rate, timing, etc. of the alternate blowing of O 2 and O 3 of the assist gas is performed by the assist gas supply controller shown in FIG. That is, for example, the first assist gas supply pipe 20A is supplied with the flow rate adjusting valves 22A 1 to O 2 connected thereto, which are controlled to have a predetermined flow rate.
Second supply by controlling the flow rate adjusting valve 22B 2 from O 3 connected thereto to assist gas supply pipe 20B to a predetermined flow rate of, for example equal to O 2, the first solenoid valve 19A by the assist gas control unit 23 And the second solenoid valve 19B are alternately opened and closed at a predetermined timing, and O 2 and O 3 are alternately supplied to the assist gas supply pipe 16 at a predetermined timing.
【００２４】図３はこの実施例における、遠紫外光(DU
V) 照射のタイミングと異なるアシストガスのO2、O3の
噴出のタイミングの関係を示したタイムチャートで、 D
UVの照射時間ａ中に交互に噴射されるO2とO3の噴射時間
ｂ及びｃはそれぞれ３〜５secに制御されている。FIG. 3 shows the far ultraviolet light (DU) in this embodiment.
V) A time chart showing the relationship between the irradiation timing and the ejection timing of O 2 and O 3 of the assist gas,
The injection times b and c of O 2 and O 3 which are alternately injected during the UV irradiation time a are controlled to 3 to 5 seconds, respectively.
【００２５】この実施例において、 DUVランプにはメタ
ルハライドランプを用い、波長 250nm付近の遠紫外光照
度は200mW/cm2 に調整した。また遠紫外光照射の移動
（走査）速度即ちステージ18の移動速度は 100mm/minに
調整した。また、アシストガスのO2、O3の流量はそれぞ
れ２l/min に制御し、それらの切り換えのタイミングは
３〜５sec とした。なお、アシストガス噴出・排気ノズ
ル13によりアシストガスが吹きつけられる領域は約30mm
φである。In this example, a metal halide lamp was used as the DUV lamp, and the illuminance of far-ultraviolet light near a wavelength of 250 nm was adjusted to 200 mW / cm 2 . The moving (scanning) speed of far-ultraviolet light irradiation, that is, the moving speed of the stage 18 was adjusted to 100 mm / min. Further, the flow rates of O 2 and O 3 of the assist gas were controlled to 2 l / min, respectively, and the switching timing thereof was set to 3 to 5 seconds. The area where the assist gas is blown out by the assist gas jet / exhaust nozzle 13 is approximately 30 mm.
φ.
【００２６】図４は上記マスク製造工程の実施例の模式
工程断面図である。図４(a) はレジスト膜３のスピンコ
ートを終わった乾板10を示した図で、レジスト膜３のス
ピンコート厚さは 500nmを目標にしてなされているが、
レジスト膜３の周辺部４では厚さ１〜1.5 μｍ程度の厚
さに形成される。FIG. 4 is a schematic process sectional view of an embodiment of the mask manufacturing process. FIG. 4 (a) is a view showing the dry plate 10 on which the resist film 3 has been spin-coated, and the spin-coating thickness of the resist film 3 is set to 500 nm.
The peripheral portion 4 of the resist film 3 is formed to have a thickness of about 1 to 1.5 μm.
【００２７】図４(b) は上記実施例の方法によりレジス
ト膜周辺部４のレジストの盛り上がり部3Pが除去された
レジスト剥離の途中の状態を示す。そしてさらに DUV照
射とアシストガスO2、O3の交互吹きつけが継続され、図
４(c) に示すように、該乾板10の周辺部10P の幅５mmの
領域のレジスト膜３が完全に除去され該領域のCr膜２が
完全に表出された時点でレジスト膜３の選択的な剥離除
去が完了する。FIG. 4 (b) shows a state in the middle of resist stripping in which the resist raised portion 3P of the resist film peripheral portion 4 has been removed by the method of the above embodiment. Then, the DUV irradiation and the alternate spraying of the assist gas O 2 and O 3 are continued, and as shown in FIG. 4 (c), the resist film 3 in the area of 5 mm width of the peripheral portion 10P of the dry plate 10 is completely removed. Then, when the Cr film 2 in the region is completely exposed, the selective peeling removal of the resist film 3 is completed.
【００２８】この実施例によれば、上記遠紫外光の走査
速度 100/minで図４(c) に示すように、１〜1.5 μｍ程
度に厚く付着していた乾板10周辺部のレジスト膜４は完
全に除去された。このことは、レジストの剥離速度が従
来の２〜３倍に向上したことを示している。According to this embodiment, as shown in FIG. 4 (c) at the scanning speed of far-ultraviolet light of 100 / min, the resist film 4 on the periphery of the dry plate 10 adhered thickly to about 1 to 1.5 μm. Was completely removed. This indicates that the resist peeling speed was improved to 2 to 3 times that of the conventional one.
【００２９】上記実施例においては、本発明に係る樹脂
膜剥離方法をマスク製造に適用したが、上記乾板を半導
体基板に置き換えることにより、半導体装置の製造にも
適用され、且つ同様の効果をうることができることは勿
論である。In the above embodiments, the resin film peeling method according to the present invention is applied to the mask manufacturing, but by replacing the dry plate with the semiconductor substrate, it is also applied to the manufacturing of the semiconductor device and the same effect can be obtained. Of course, you can do that.
【００３０】また 上記実施例においては、異なる２種
類のアシストガスを交互に吹きつけて遠紫外光照射領域
の雰囲気を交互に変化させたが、大気中において上記実
施例の装置を用い大気と異なる成分組成の１種類のアシ
ストガス例えばO3を上記実施例と類似の間隔で間欠的に
吹きつけても、遠紫外光照射領域の雰囲気が大気とO3と
に交互に変わるので、ほぼ前記実施例同様の効果が得ら
れる。Further, in the above-described embodiment, two different kinds of assist gas are alternately blown to alternately change the atmosphere in the far-ultraviolet light irradiation region. However, the atmosphere of the far-ultraviolet light irradiation area is different from the atmosphere by using the apparatus of the above-mentioned embodiment. Even if one type of assist gas having a component composition, for example, O 3 , is intermittently blown at intervals similar to those in the above-mentioned embodiment, the atmosphere in the far-ultraviolet light irradiation region is alternately changed to the atmosphere and O 3 , so that almost the same operation as described above is performed. The same effect as the example is obtained.
【００３１】更にまた、異なる２種類のアシストガスを
用いる場合、図２に示したアシストガス制御部で、単一
成分のアシストガスを混合して形成した異なる組成の混
合ガスを、異なる２種類のアシストガスとして用いても
よい。Furthermore, when two different kinds of assist gases are used, the assist gas control section shown in FIG. 2 produces mixed gas of different composition formed by mixing single component assist gases. It may be used as an assist gas.
【００３２】更にまた、３種類以上の異なる種類のアシ
ストガスを用いても勿論さしつかえない。Furthermore, it is of course possible to use three or more different kinds of assist gases.
【００３３】[0033]
【発明の効果】以上説明のように本発明に係る樹脂膜剥
離方法によれば、乾板あるいは半導体基板上にスピンコ
ートされたレジスト膜の周辺部を選択的に、従来より短
時間で且つ完全に除去することができるので、マスクあ
るいは半導体基板の製造手番の短縮が図れると同時に、
レジストダストに起因してマスクあるいは半導体装置に
生ずるパターン欠陥も防止される。従って本発明は、微
細且つ高精度なパターンを有するマスク及び半導体装置
の、品質及び歩留りの向上等に寄与するところが大き
い。As described above, according to the resin film peeling method of the present invention, the peripheral portion of the resist film spin-coated on the dry plate or the semiconductor substrate is selectively and completely completed in a shorter time than the conventional method. Since it can be removed, the manufacturing process of the mask or the semiconductor substrate can be shortened, and at the same time,
Pattern defects caused in the mask or the semiconductor device due to the resist dust are also prevented. Therefore, the present invention largely contributes to the improvement of the quality and yield of the mask and the semiconductor device having the fine and highly accurate pattern.
【図１】 本発明に係る樹脂膜剥離装置の要部模式図
（その１）FIG. 1 is a schematic view of a main part of a resin film peeling apparatus according to the present invention (No. 1)
【図２】 本発明に係る樹脂膜剥離装置の要部模式図
（その２）FIG. 2 is a schematic view of a main part of the resin film peeling device according to the present invention (part 2).
【図３】 本発明の樹脂膜剥離方法の一実施例のタイム
チャートFIG. 3 is a time chart of an embodiment of the resin film peeling method of the present invention.
【図４】 本発明の樹脂膜剥離方法の一実施例の工程断
面図FIG. 4 is a process sectional view of an embodiment of a resin film peeling method of the present invention.
【図５】 乾板のレジスト塗布後の状態の模式図FIG. 5 is a schematic diagram of a state of a dry plate after resist application.
【図６】 従来のレジスト剥離装置の模式図FIG. 6 is a schematic diagram of a conventional resist stripping apparatus.
１ ガラス基板 ２ Cr層 ３ レジスト膜 ４ 該レジスト膜の周辺部 ５ 遠紫外光(DUV) ランプ ６ 反射鏡 ７ 集光レンズ ８ 遮光板 ９ ホットプレート 10 乾板 11 遠紫外光投光器 12 光ファイバ 13 アシストガス噴出・排気ノズル 14 アシストガス噴出ノズル 15 局所排気ノズル 16 アシストガス供給管 17 排気配管 18 移動ステージ DUV 遠紫外光 1 Glass substrate 2 Cr layer 3 Resist film 4 Peripheral part of the resist film 5 Deep ultraviolet light (DUV) lamp 6 Reflector 7 Condensing lens 8 Light shield 9 Hot plate 10 Dry plate 11 Far ultraviolet light projector 12 Optical fiber 13 Assist gas Ejection / exhaust nozzle 14 Assist gas ejection nozzle 15 Local exhaust nozzle 16 Assist gas supply pipe 17 Exhaust pipe 18 Moving stage DUV Far ultraviolet light
Claims (6)
(3) に集光した遠紫外光(DUV) を連続的に移動照射して
該樹脂膜(3) の該遠紫外光(DUV) に照射された領域(4)
を選択的に除去する樹脂膜剥離方法において、該遠紫外
光(DUV) の照射と同時に、該遠紫外光(DUV) に照射され
ている領域(4) にアシストガスを間欠的に吹きつけ該領
域の雰囲気を間欠的に変化せしめることを特徴とする樹
脂膜剥離方法。1. A resin film deposited on a substrate (1) to be processed.
Area (4) of the resin film (3) exposed to the deep ultraviolet light (DUV) by continuously moving and irradiating the deep ultraviolet light (DUV) focused on (3)
In the resin film peeling method of selectively removing the ultraviolet rays, the assist gas is intermittently blown to the region (4) irradiated with the deep ultraviolet light (DUV) simultaneously with the irradiation of the deep ultraviolet light (DUV). A resin film peeling method characterized by intermittently changing the atmosphere of a region.
(3) に集光した遠紫外光(DUV) を連続的に移動照射して
該樹脂膜(3) の該遠紫外光(DUV) に照射された領域(4)
を選択的に除去する樹脂膜剥離方法において、該遠紫外
光(DUV) の照射と同時に、該遠紫外光(DUV) に照射され
ている領域(4) に異なる種類のアシストガスを交互に吹
きつけ該領域の雰囲気を交互に変化せしめることを特徴
とする樹脂膜剥離方法。2. A resin film deposited on a substrate (1) to be processed.
Area (4) of the resin film (3) exposed to the deep ultraviolet light (DUV) by continuously moving and irradiating the deep ultraviolet light (DUV) focused on (3)
In the resin film peeling method for selectively removing the ultraviolet rays (DUV), simultaneously with the irradiation of the deep ultraviolet light (DUV), different types of assist gases are alternately blown to the area (4) irradiated with the deep ultraviolet light (DUV). A method for peeling a resin film, characterized in that the atmosphere in the area is alternately changed.
特徴とする請求項１または２記載の樹脂膜剥離方法。3. The resin film peeling method according to claim 1, wherein the resin film is a resist film.
8)上に載置され、表面に樹脂膜(3) を有する被処理基板
(1) を搭載加熱するホットプレート(9) と、集光系を備
え該樹脂膜(3) の一部領域(4) 上に遠紫外光(DUV) を照
射する遠紫外光照射機構(11)と、該遠紫外光(DUV) が照
射されている該一部領域(4) に、１種類のアシストガス
を間欠的に、若しくは２種類以上のアシストガスを交互
に吹きつけるアシストガス吹きつけ機構(13)とを有して
なることを特徴とする樹脂膜剥離装置。4. A moving stage (18) and the moving stage (1
8) A substrate to be processed which is placed on and has a resin film (3) on the surface
A hot plate (9) for heating (1) and a far ultraviolet light irradiation mechanism (11) for irradiating far ultraviolet light (DUV) onto a partial area (4) of the resin film (3) equipped with a condensing system (11) ) And the partial region (4) irradiated with the deep ultraviolet light (DUV), one kind of assist gas is intermittently blown or two or more kinds of assist gas are blown alternately A resin film peeling device comprising a mechanism (13).
スト膜を塗布した後、該レジスト膜にパターン露光を行
う前に、該ガラス基板周辺部上の該レジスト膜を前記請
求項１、２または３記載の樹脂膜剥離方法により選択的
に除去する工程を有することを特徴とするマスクの製造
方法。5. The resist film on the peripheral portion of the glass substrate after the resist film is applied on the glass substrate on which the light shielding film is formed and before the resist film is subjected to pattern exposure. Alternatively, there is provided a mask manufacturing method characterized by comprising a step of selectively removing the resin film by the resin film peeling method described in 3.
後、該レジスト膜にパターン露光を行う前に、該半導体
基板の周辺部上の該レジスト膜を前記請求項１、２また
は３記載の樹脂膜剥離方法により選択的に除去する工程
を有することを特徴とする半導体装置の製造方法。6. The resin according to claim 1, 2 or 3, wherein after coating a resist film on a semiconductor substrate and before performing pattern exposure on the resist film, the resist film on the peripheral portion of the semiconductor substrate is coated. A method of manufacturing a semiconductor device, comprising a step of selectively removing the film by a film peeling method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14650294A JPH0817708A (en) | 1994-06-28 | 1994-06-28 | Method and apparatus for exfoliation of resin film as well as mask and manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14650294A JPH0817708A (en) | 1994-06-28 | 1994-06-28 | Method and apparatus for exfoliation of resin film as well as mask and manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0817708A true JPH0817708A (en) | 1996-01-19 |
Family
ID=15409084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14650294A Withdrawn JPH0817708A (en) | 1994-06-28 | 1994-06-28 | Method and apparatus for exfoliation of resin film as well as mask and manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0817708A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6554205B1 (en) | 1997-02-26 | 2003-04-29 | Ebara Corporation | Gas polishing method, gas polishing nozzle and polishing apparatus |
| WO2004088421A1 (en) * | 2003-03-31 | 2004-10-14 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| US7470344B1 (en) * | 1996-02-27 | 2008-12-30 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
-
1994
- 1994-06-28 JP JP14650294A patent/JPH0817708A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7470344B1 (en) * | 1996-02-27 | 2008-12-30 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
| US6554205B1 (en) | 1997-02-26 | 2003-04-29 | Ebara Corporation | Gas polishing method, gas polishing nozzle and polishing apparatus |
| WO2004088421A1 (en) * | 2003-03-31 | 2004-10-14 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| US7713663B2 (en) | 2003-03-31 | 2010-05-11 | Hoya Corporation | Mask blank, manufacturing method of mask blank, manufacturing method of transfer mask and manufacturing method of semiconductor device |
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Legal Events
| Date | Code | Title | Description |
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| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20010904 |