JPH08162646A - Sensor for mechanical quantity - Google Patents
Sensor for mechanical quantityInfo
- Publication number
- JPH08162646A JPH08162646A JP32387894A JP32387894A JPH08162646A JP H08162646 A JPH08162646 A JP H08162646A JP 32387894 A JP32387894 A JP 32387894A JP 32387894 A JP32387894 A JP 32387894A JP H08162646 A JPH08162646 A JP H08162646A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- gate
- source
- stress
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、感歪部に形成したトラ
ンジスタを用いて、圧力検出,加速度検出等の各センサ
として利用できる力学量センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mechanical quantity sensor that can be used as sensors for pressure detection, acceleration detection, etc., by using a transistor formed in a strain sensitive portion.
【0002】[0002]
【従来の技術】例えば、トランジスタであるMISFE
T(Metal Insulator SemiconductorField Effect Tran
sistor )を用いて歪を検出することにより加速度を検
出するセンサとして、特開平3- 24465号公報に開示され
ているものがある。これは、セラミックス材料や樹脂材
料等で形成された検出板に2個のFETを歪感知部とし
ての機能を果たす素子となるように形成し、前記検出板
の一端に設けた重りが加速度により移動する際に生じる
前記検出板の撓みによって生じる応力の変化を前記FE
Tの電流の変化と取り出せるように構成されている。2. Description of the Related Art For example, a transistor MISFE
T (Metal Insulator SemiconductorField Effect Tran
There is a sensor disclosed in Japanese Patent Laid-Open No. 3-24465 as a sensor for detecting acceleration by detecting strain using a sistor. In this, two FETs are formed on a detection plate made of a ceramic material or a resin material so as to function as a strain sensing section, and a weight provided at one end of the detection plate is moved by acceleration. The change in the stress caused by the bending of the detection plate that occurs when
It is configured so that the change in the current of T can be taken out.
【0003】[0003]
【発明が解決しようとする課題】本発明は、前記従来の
技術よりも簡単な構成にして、トランジスタにより歪を
検出する力学量センサの具体的な構成を提供せんとする
ものである。SUMMARY OF THE INVENTION The present invention provides a concrete structure of a mechanical quantity sensor which detects distortion by using a transistor with a simpler structure than that of the conventional technique.
【0004】[0004]
【課題を解決するための手段】前記課題を解決するた
め、本発明は、半導体基板からなる感歪部に応力に応じ
て分極を生じる材料からなる分極層を介して形成した電
極と前記半導体基板に半導体層により形成した少なくと
も2個の電極とで構成したトランジスタからなるもので
ある。In order to solve the above problems, the present invention relates to an electrode formed through a polarization layer made of a material that causes polarization in a strain sensitive portion made of a semiconductor substrate according to stress, and the semiconductor substrate. And a transistor composed of at least two electrodes formed of a semiconductor layer.
【0005】特に、p型シリコン基板からなる感歪部に
応力に応じて分極を生じる材料からなる分極層を介して
形成した電極であるゲートと前記シリコン基板にn型半
導体拡散層により形成した電極であるソース及びドレイ
ンとでMISFETを形成し、アースとなる前記ソース
と前記ゲート間に高抵抗を接続し、前記ドレインに負荷
抵抗を介して電源を接続し、前記ドレインを出力端子と
したものである。In particular, a gate, which is an electrode formed on a strain-sensitive portion made of a p-type silicon substrate through a polarization layer made of a material which is polarized according to stress, and an electrode formed by an n-type semiconductor diffusion layer on the silicon substrate. And a source and a drain to form a MISFET, a high resistance is connected between the source and the gate, which are ground, a power source is connected to the drain through a load resistor, and the drain is an output terminal. is there.
【0006】更に、前記分極層が、圧電材料又は強誘電
体材料からなるものである。Further, the polarization layer is made of a piezoelectric material or a ferroelectric material.
【0007】[0007]
【作用】トランジスタの分極層が応力に応じて分極する
と、電極間に電圧が発生し、感歪部における歪を検出す
ることができる。When the polarization layer of the transistor is polarized according to the stress, a voltage is generated between the electrodes and the strain in the strain sensitive portion can be detected.
【0008】[0008]
【実施例】以下、本発明の力学量センサを、圧力センサ
に適用した図1,図2に記載の実施例に基づき説明す
る。なお、図1は実施例の構造を説明する要部断面図、
図2は等価回路図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The mechanical quantity sensor of the present invention will be described below with reference to the embodiments shown in FIGS. 1 and 2 applied to a pressure sensor. In addition, FIG. 1 is a cross-sectional view of an essential part for explaining the structure of the embodiment,
FIG. 2 is an equivalent circuit diagram.
【0009】本実施例は、MISFETを形成して用い
る場合を示している。1はp型シリコン基板(半導体基
板)であり、その一部が外部からの圧力による応力を生
じる感歪部1aとなっており、この感歪部1aに絶縁層
2,応力に応じて分極を生じる材料からなる分極層3及
び電極層(電極)4が順次積層形成されている。また、
シリコン基板1には、2つのn型半導体層(電極)5,
6が各々その一部が分極層3の下方に位置するように形
成されている。そして、電極層4と一方のn型半導体層
5との間に高抵抗7を接続し、他方のn型半導体層6に
負荷抵抗8を介して電源Vccを接続し、このn型半導体
層6を出力端子とした。すなわち、電極層4をゲート
G、n型半導体層5をソースS、n型半導体層5をドレ
インDとし、図2のようなMISFET9を構成してい
る。This embodiment shows the case where a MISFET is formed and used. Reference numeral 1 denotes a p-type silicon substrate (semiconductor substrate), a part of which serves as a strain sensitive portion 1a that generates stress due to external pressure. The strain sensitive portion 1a has an insulating layer 2 and is polarized according to the stress. The polarization layer 3 and the electrode layer (electrode) 4 made of the resulting material are sequentially laminated. Also,
The silicon substrate 1 has two n-type semiconductor layers (electrodes) 5,
6 are formed so that a part thereof is located below the polarization layer 3. Then, a high resistance 7 is connected between the electrode layer 4 and one of the n-type semiconductor layers 5, and a power source Vcc is connected to the other n-type semiconductor layer 6 through a load resistor 8. Was used as the output terminal. That is, the electrode layer 4 is used as the gate G, the n-type semiconductor layer 5 is used as the source S, and the n-type semiconductor layer 5 is used as the drain D to form the MISFET 9 as shown in FIG.
【0010】具体的には、絶縁層2として二酸化シリコ
ンのような絶縁材料、分極層3としてPZT,チタン酸
バリウムのような圧電材料,強誘電体材料、n型半導体
層5,6としてはリンのような半導体材料が、適宜選択
して用いられる。また、シリコン基板1と半導体層5,
6は、夫々n型とp型の組合せでも良い。Specifically, the insulating layer 2 is made of an insulating material such as silicon dioxide, the polarization layer 3 is made of PZT, a piezoelectric material such as barium titanate, a ferroelectric material, and the n-type semiconductor layers 5 and 6 are made of phosphorus. A semiconductor material such as the above is appropriately selected and used. In addition, the silicon substrate 1 and the semiconductor layer 5,
6 may be a combination of n-type and p-type, respectively.
【0011】かかる力学量センサでは、MISFET9
の分極層3が応力を感じて分極すると、ゲートGとソー
スSとの間に電圧が発生する。従って、負荷抵抗8がつ
ながるドレインDを出力端子として、前記応力に応じた
電圧Voを取り出すことができる。In such a mechanical quantity sensor, the MISFET 9
When the polarization layer 3 of FIG. 2 senses stress and is polarized, a voltage is generated between the gate G and the source S. Therefore, the voltage Vo corresponding to the stress can be taken out using the drain D connected to the load resistor 8 as an output terminal.
【0012】このように、本実施例は、外部からの応力
を電気的変化にて検出することができるものの、小型
化,薄膜化すると高感度が得にくいことが知られている
圧電材料,強誘電体材料を、MISFET9のゲート絶
縁膜である分極層3として利用することにより、簡単な
構造であり、小型化,薄膜化しながら十分な感度を得ら
れるものとすることができる。As described above, according to the present embodiment, although it is possible to detect the stress from the outside by an electric change, it is known that it is difficult to obtain high sensitivity when the size and the thickness are reduced. By using the dielectric material as the polarization layer 3 which is the gate insulating film of the MISFET 9, it is possible to obtain a sufficient structure while having a simple structure and miniaturization and thinning.
【0013】なお、本発明は、前記実施例で説明したM
ISFETの他、MES(Metal Semiconductor )FE
T,J(Junction)−FET,HEMT(High Electro
n Mobility Transistor )等のFETや、バイポーラト
ランジスタにも同様に適応することが考えられる。In the present invention, the M described in the above embodiment is used.
In addition to ISFET, MES (Metal Semiconductor) FE
T, J (Junction) -FET, HEMT (High Electro
It is possible to apply the same to FETs such as n Mobility Transistor) and bipolar transistors.
【0014】また、本発明の力学量センサは、圧力セン
サ以外にも、加速度センサ等の他のセンサとしても同様
に使用することができる。Further, the mechanical quantity sensor of the present invention can be used not only as a pressure sensor but also as another sensor such as an acceleration sensor.
【0015】[0015]
【発明の効果】本発明は、半導体基板からなる感歪部に
応力に応じて分極を生じる材料からなる分極層を介して
形成した電極と前記半導体基板に半導体層により形成し
た少なくとも2個の電極とで構成したトランジスタから
なり、あるいは、p型又はn型のシリコン基板からなる
感歪部に応力に応じて分極を生じる材料からなる分極層
を介して形成した電極であるゲートと前記シリコン基板
にn型又はp型の半導体層により形成した電極であるソ
ース及びドレインとでMISFETを形成し、アースと
なる前記ソースと前記ゲート間に高抵抗を接続し、前記
ドレインに負荷抵抗を介して電源を接続し、前記ドレイ
ンを出力端子とし、特に前記分極層が、圧電材料又は強
誘電体材料からなるもので、従来の技術よりも簡単な構
成にして、歪を検出する力学量センサを提供することが
できる。According to the present invention, an electrode formed on a strain-sensitive portion made of a semiconductor substrate via a polarization layer made of a material that polarizes in response to stress and at least two electrodes made of the semiconductor layer on the semiconductor substrate. And a gate, which is an electrode formed through a polarization layer made of a material that causes polarization in response to stress in a strain-sensitive part made of a p-type or n-type silicon substrate, and the silicon substrate. A source and a drain, which are electrodes formed of an n-type or p-type semiconductor layer, form a MISFET, a high resistance is connected between the source and the gate, which are ground, and a power source is connected to the drain through a load resistance. The drain is used as an output terminal, and the polarization layer is made of a piezoelectric material or a ferroelectric material. It is possible to provide a mechanical quantity sensor.
【図1】本発明の実施例の構造を説明する要部断面図。FIG. 1 is a sectional view of an essential part for explaining the structure of an embodiment of the present invention.
【図2】同上実施例の等価回路図。FIG. 2 is an equivalent circuit diagram of the above embodiment.
1 シリコン基板(半導体基板) 1a 感歪部 3 分極層 4 電極層(電極) 5 半導体層(電極) 6 半導体層(電極) 7 高抵抗 8 負荷抵抗 9 MISFET G ゲート S ソース D ドレイン 1 Silicon Substrate (Semiconductor Substrate) 1a Strain Sensitive Section 3 Polarization Layer 4 Electrode Layer (Electrode) 5 Semiconductor Layer (Electrode) 6 Semiconductor Layer (Electrode) 7 High Resistance 8 Load Resistance 9 MISFET G Gate S Source D Drain
Claims (3)
て分極を生じる材料からなる分極層を介して形成した電
極と前記半導体基板に半導体層により形成した少なくと
も2個の電極とで構成したトランジスタからなることを
特徴とする力学量センサ。1. An electrode formed through a polarization layer made of a material that polarizes in response to stress in a strain-sensitive portion formed of a semiconductor substrate, and at least two electrodes formed of the semiconductor layer on the semiconductor substrate. A mechanical quantity sensor comprising a transistor.
歪部に応力に応じて分極を生じる材料からなる分極層を
介して形成した電極であるゲートと前記シリコン基板に
n型又はp型の半導体層により形成した電極であるソー
ス及びドレインとでMISFETを形成し、アースとな
る前記ソースと前記ゲート間に高抵抗を接続し、前記ド
レインに負荷抵抗を介して電源を接続し、前記ドレイン
を出力端子としたことを特徴とする力学量センサ。2. A gate, which is an electrode formed through a polarization layer made of a material that polarizes in response to stress in a strain-sensitive portion made of a p-type or n-type silicon substrate, and n-type or p-type on the silicon substrate. Forming a MISFET with a source and a drain that are electrodes formed by the semiconductor layer, connecting a high resistance between the source and the gate, which are ground, and connecting a power source to the drain through a load resistance; A mechanical quantity sensor characterized by using as an output terminal.
料からなることを特徴とする請求項1又は請求項2記載
の力学量センサ。3. The mechanical quantity sensor according to claim 1, wherein the polarization layer is made of a piezoelectric material or a ferroelectric material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32387894A JPH08162646A (en) | 1994-11-30 | 1994-11-30 | Sensor for mechanical quantity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32387894A JPH08162646A (en) | 1994-11-30 | 1994-11-30 | Sensor for mechanical quantity |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08162646A true JPH08162646A (en) | 1996-06-21 |
Family
ID=18159615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32387894A Pending JPH08162646A (en) | 1994-11-30 | 1994-11-30 | Sensor for mechanical quantity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08162646A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003794A (en) * | 2009-06-19 | 2011-01-06 | Toyota Motor Corp | Strain detecting element |
JP2015173682A (en) * | 2014-03-13 | 2015-10-05 | コニカミノルタ株式会社 | Acoustic sensor, ultrasonic probe and ultrasonic diagnostic equipment |
JP2017510817A (en) * | 2014-03-13 | 2017-04-13 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | Pressure sensor and method for manufacturing the pressure sensor |
-
1994
- 1994-11-30 JP JP32387894A patent/JPH08162646A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003794A (en) * | 2009-06-19 | 2011-01-06 | Toyota Motor Corp | Strain detecting element |
JP2015173682A (en) * | 2014-03-13 | 2015-10-05 | コニカミノルタ株式会社 | Acoustic sensor, ultrasonic probe and ultrasonic diagnostic equipment |
JP2017510817A (en) * | 2014-03-13 | 2017-04-13 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | Pressure sensor and method for manufacturing the pressure sensor |
US10180370B2 (en) | 2014-03-13 | 2019-01-15 | Robert Bosch Gmbh | Pressure sensor and method for producing the pressure sensor |
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