JPH08157299A - Method for growing aluminum compound semiconductor crystal - Google Patents
Method for growing aluminum compound semiconductor crystalInfo
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- JPH08157299A JPH08157299A JP29961594A JP29961594A JPH08157299A JP H08157299 A JPH08157299 A JP H08157299A JP 29961594 A JP29961594 A JP 29961594A JP 29961594 A JP29961594 A JP 29961594A JP H08157299 A JPH08157299 A JP H08157299A
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- Prior art keywords
- compound semiconductor
- based compound
- crystal growth
- growth method
- crystal
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，有機金属ガス利用の分
子線エピタキシー（Metal organic molucular beam epi
taxy, ＭＯＭＢＥ）法を用いたＡｌ系化合物半導体の結
晶成長に関する。BACKGROUND OF THE INVENTION The present invention is directed to a metal organic molecular beam epitaxy utilizing an organic metal gas.
The present invention relates to crystal growth of Al-based compound semiconductors using the taxy (MOMBE) method.
【０００２】[0002]
【従来の技術】従来，有機金属ガスを用いた分子線エピ
タキシー（ＭＯＭＢＥ）法を使用したＡｌＡｓ，ＡｌＧ
ａＡｓ等の化合物半導体の結晶成長において，Ａｌの原
料ガスとして，トリメチルアルミニウム（以下，ＴＭＡ
と呼ぶ），Ａｓ原料としてＡｓ4 が用いられてきた。2. Description of the Related Art Conventionally, AlAs and AlG using a molecular beam epitaxy (MOMBE) method using an organometallic gas.
In crystal growth of a compound semiconductor such as aAs, trimethyl aluminum (hereinafter, TMA) is used as a source gas of Al.
And called), As 4 has been used as As a raw material.
【０００３】ここで，本発明者らの検証実験によると，
これらの原料ガスを用いてＡｌＡｓ等の結晶成長を成長
温度６００℃で試みたが，平坦な結晶平面が得られなか
った。更に，ＧａＡｓ酸化膜マスクを用い，ＧａＡｓ酸
化マスクの開口部にＡｌＡｓ又はＡｌＧａＡｓをＴＭ
Ａ，Ａｓ4 を用いて選択成長を試みた場合，ＡｌＡｓが
マスク上に堆積し，選択成長ができなくなってしまっ
た。According to the verification experiments conducted by the present inventors,
Crystal growth of AlAs or the like was attempted at a growth temperature of 600 ° C. using these raw material gases, but a flat crystal plane was not obtained. Further, a GaAs oxide film mask is used, and AlAs or AlGaAs is used as a TM in the opening of the GaAs oxide mask.
When selective growth was attempted using A and As 4 , AlAs was deposited on the mask and selective growth could not be performed.
【０００４】[0004]
【発明が解決しようとする課題】上述したように，ＭＯ
ＭＢＥ法を用いてスムースな表面を持つＡｌＡｓ等のＡ
ｌ系化合物半導体の結晶成長は困難であった。As described above, the MO
A such as AlAs having a smooth surface using the MBE method
It was difficult to grow a crystal of an l-based compound semiconductor.
【０００５】また，真空一貫プロセスを用いるＡｌＡｓ
等の化合物半導体の選択成長が実現できなかった。AlAs using a vacuum integrated process
However, selective growth of such compound semiconductors could not be realized.
【０００６】さらに，ＡｌＡｓ等の化合物半導体のＭＯ
ＭＢＥ法による結晶成長を実現するための原料ガスの組
み合わせが明らかではなかった。Furthermore, the MO of compound semiconductors such as AlAs
The combination of raw material gases for realizing the crystal growth by the MBE method was not clear.
【０００７】そこで，本発明の技術的課題は，ＭＯＭＢ
Ｅ法を用いるＡｌ系化合物半導体の結晶成長において，
良質の結晶を得ることを目的とし，かつ真空一貫プロセ
スを用いるＡｌ系の化合物半導体の選択成長を実現する
ことにある。Therefore, the technical problem of the present invention is that MOMB
In crystal growth of an Al-based compound semiconductor using the E method,
The purpose is to obtain a good quality crystal and to realize selective growth of an Al-based compound semiconductor using a vacuum consistent process.
【０００８】[0008]
【課題を解決するための手段】本発明によれば，有機金
属ガスを用いた分子線エピタキシー法を用いるＡｌ系化
合物半導体結晶成長を行う方法において，前記有機金属
ガスは，アルキルアルミニウム類又はアミンアラン類に
よって示される有機金属ガスの少なくとも一種を含むこ
とを特徴とするＡｌ系化合物半導体の結晶成長方法が得
られる。According to the present invention, in a method for growing an Al-based compound semiconductor crystal using a molecular beam epitaxy method using an organometallic gas, the organometallic gas is an alkylaluminum or amine alane. A method for growing a crystal of an Al-based compound semiconductor, characterized in that it contains at least one kind of organometallic gas represented by a class.
【０００９】ここで，本発明において，アルキルアルミ
ニウム類とは，Ｒ1 （Ｒ2 ）ＡｌＨで示される有機金属
化合物で，Ｒ1 及びＲ2 は，ＣＨ3 ，Ｃ2 Ｈ5 等の脂肪
族炭化水素化合物である。また，本発明において，アミ
ンアラン類とは，Ｒ3 （Ｒ4）（Ｒ5 ）ＮＡｌＨ3 で示
される化合物で，Ｒ3 （Ｒ4 ）（Ｒ5 ）Ｎは第３アミン
で，Ｒ3 ，Ｒ4 ，及びＲ5 は夫々，Ｈ又は脂肪族炭化水
素の官能基である。そして，前記アルキルアルミニウム
は，ジメチルアルミニウムハイドライド（（ＣＨ3 ）2
ＡｌＨ，以下，ＤＭＡｌＨと呼ぶ）であり，前記アミン
アラン類はジメチルエチルアミンアラン（（ＣＨ3 ）2
Ｃ2 Ｈ5 ＮＡｌＨ3 ）であることが好ましい。In the present invention, the alkylaluminums are organic metal compounds represented by R 1 (R 2 ) AlH, and R 1 and R 2 are aliphatic carbonized such as CH 3 and C 2 H 5. It is a hydrogen compound. Further, in the present invention, the amine alane is a compound represented by R 3 (R 4 ) (R 5 ) NAlH 3 , and R 3 (R 4 ) (R 5 ) N is a tertiary amine and R 3 , R 4 and R 5 are H or an aliphatic hydrocarbon functional group, respectively. The alkyl aluminum is dimethyl aluminum hydride ((CH 3 ) 2
AlH, hereinafter referred to as DMAlH), and the amine alanes are dimethylethylamine alane ((CH 3 ) 2
C 2 H 5 NAlH 3 ) is preferable.
【００１０】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記Ａｌ系化合物半導
体は，Ａｌを必須成分とするIII 族元素の少なくとも一
種と，Ｖ族元素の少なくとも一種であることを特徴とす
るＡｌ系化合物半導体の結晶成長方法が得られる。According to the present invention, in the crystal growth method of the Al-based compound semiconductor, the Al-based compound semiconductor is at least one group III element containing Al as an essential component and at least one group V element. A method for growing a crystal of an Al-based compound semiconductor is obtained.
【００１１】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記有機金属ガスは，
前記III 族元素を含むIII 族有機金属ガスと，前記Ｖ族
元素を含むＶ族有機金属ガスとの混合ガスからなり，前
記Ｖ族有機金属ガスと前記ＩＩＩ族有機金属ガスとの混
合比の値は，２未満であることを特徴とするＡｌ系化合
物半導体の結晶成長方法が得られる。Further, according to the present invention, in the crystal growth method of the Al-based compound semiconductor, the organometallic gas is
A mixed gas of a Group III organometallic gas containing the Group III element and a Group V organometallic gas containing the Group V element, and a value of a mixing ratio of the Group V organometallic gas to the Group III organometallic gas Is less than 2, and a crystal growth method of an Al-based compound semiconductor is obtained.
【００１２】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記有機金属ガスを用
いて多くとも５００℃の温度で結晶成長させることを特
徴とするＡｌ系化合物半導体の結晶成長方法が得られ
る。Further, according to the present invention, in the crystal growth method of an Al-based compound semiconductor, the crystal growth of the Al-based compound semiconductor is performed at a temperature of at most 500 ° C. using the organometallic gas. A growth method is obtained.
【００１３】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記Ａｌ系化合物半導
体は，ＡｌＡｓ，ＡｌＧａＡｓ，及びＡｌＧａＩｎＡｓ
から選択された少なくとも一種であることを特徴とする
Ａｌ系化合物半導体の結晶成長方法が得られる。According to the present invention, in the crystal growth method of the Al-based compound semiconductor, the Al-based compound semiconductor is AlAs, AlGaAs, or AlGaInAs.
It is possible to obtain a crystal growth method of an Al-based compound semiconductor, which is characterized by being at least one selected from the following.
【００１４】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記ＩＩＩ族元素はＡ
ｌを必ず含むＡｌ，Ｇａ，Ｉｎから選択された少なくと
も一種からなり，前記Ｖ族元素は，Ａｓ及びＮのうちか
ら選択された少なくとも一種であることを特徴とするＡ
ｌ系化合物半導体の結晶成長方法が得られる。Further, according to the present invention, in the crystal growth method of the Al-based compound semiconductor, the group III element is A
A is characterized in that it comprises at least one selected from Al, Ga, and In that always contains l, and the group V element is at least one selected from As and N.
A crystal growth method for an l-based compound semiconductor is obtained.
【００１５】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記ＩＩＩ族元素がＧ
ａを含む場合，前記ＩＩＩ族有機金属ガスは，アルキル
ガリウムを含むことを特徴とするＡｌ系化合物半導体の
結晶成長方法が得られる。According to the present invention, in the crystal growth method of the Al-based compound semiconductor, the group III element is G
When a is included, the group III organometallic gas contains an alkylgallium, which is a method for crystal growth of an Al-based compound semiconductor.
【００１６】ここで，本発明の前記Ａｌ系化合物半導体
の結晶成長方法において，前記アルキルガリウムは，一
般式Ｒ6 （Ｒ7 ）（Ｒ8 ）Ｇａ（但し，Ｒ6 ，Ｒ7 ，Ｒ
8 は水素又は脂肪族炭化水素の官能基）で示され，その
中でもトリメチルガリウム（（ＣＨ3 ）3 Ｇａ），及び
トリエチルガリウム（（Ｃ2 Ｈ5 ）3 Ｇａ）の内の少な
くとも一種であることが好ましい。Here, in the crystal growth method for an Al-based compound semiconductor according to the present invention, the alkylgallium is represented by the general formula R 6 (R 7 ) (R 8 ) Ga (provided that R 6 , R 7 , R 7
8 is represented by hydrogen or an aliphatic hydrocarbon functional group, and is at least one of trimethylgallium ((CH 3 ) 3 Ga) and triethylgallium ((C 2 H 5 ) 3 Ga). Is preferred.
【００１７】また，本発明によれば，前記Ａｌ系化合物
半導体の結晶成長方法において，前記Ｖ族元素がＡｓを
含む場合，前記Ｖ族有機金属ガスは，アミノアルシンを
含むことを特徴とするＡｌ系化合物半導体の結晶成長方
法が得られる。ここで，本発明の前記Ａｌ系化合物半導
体の結晶成長方法において，前記アミノアルシン類は，
Ａｍ1 Ａｓ（Ａｍ2 ）Ａｍ3 （但し，Ａｍ1 ，Ａｍ2 ，
Ａｍ3 は第１アミンで，Ｒ9 ，Ｒ10，Ｒ11をＨを含むＣ
Ｈ3 ，Ｃ2 Ｈ5 等の脂肪族炭化水素の官能基としたとき
に，Ｒ9 （Ｒ10）ＮＲ11で示される化合物であり，特
に，トリスジメチルアミノアルシン｛Ａｓ［Ｎ（Ｃ
Ｈ3 ）2 ］3 ｝であることが好ましい。Further, according to the present invention, in the crystal growth method of the Al-based compound semiconductor, when the V-group element contains As, the V-group organometallic gas contains aminoarsine. A crystal growth method of a compound semiconductor is obtained. Here, in the crystal growth method of the Al-based compound semiconductor of the present invention, the aminoarsines are
Am 1 As (Am 2 ) Am 3 (provided that Am 1 , Am 2 ,
Am 3 is a primary amine, and C containing R 9 , R 10 and R 11 as H
A compound represented by R 9 (R 10 ) NR 11 when it is a functional group of an aliphatic hydrocarbon such as H 3 and C 2 H 5 , and particularly trisdimethylaminoarsine {As [N (C
It is preferred H 3) 2] is a 3}.
【００１８】更に，本発明によれば，前記いずれかのＡ
ｌ系化合物半導体の結晶成長方法において，前記結晶成
長は，ＧａＮマスクとＧａＡｓ酸化物マスクを用いた真
空一貫プロセスに用いるＡｌ系化合物半導体の選択的結
晶成長であることを特徴とするＡｌ系化合物半導体の結
晶成長方法が得られる。Further, according to the present invention, any one of the above A
In the crystal growth method of an l-based compound semiconductor, the crystal growth is selective crystal growth of an Al-based compound semiconductor used in a vacuum integrated process using a GaN mask and a GaAs oxide mask. The crystal growth method of is obtained.
【００１９】[0019]
【実施例】以下に本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００２０】（実施例１）図１は本発明の実施例１に係
るアルミニウム（Ａｌ）系化合物半導体の結晶成長方法
の各工程を順に示す図で，窒化ガリウム（ＧａＮ）マス
クを用いたアルミニウムヒ素（ＡｌＡｓ）の真空一貫プ
ロセスを用いる選択成長について示してある。(Embodiment 1) FIG. 1 is a diagram sequentially showing each step of a method for growing a crystal of an aluminum (Al) compound semiconductor according to Embodiment 1 of the present invention. Aluminum arsenic using a gallium nitride (GaN) mask is used. Shown is selective growth using a vacuum integrated process of (AlAs).
【００２１】図１（ａ）を参照して，ＧａＡｓ（１０
０）の基板１を用い，超真空装置内において先ず基板１
表面の自然酸化膜を除去した後，基板温度５８０℃でＧ
ａＡｓのエピタキシャル成長を行う。ＧａＡｓをエピタ
キシャル成長した後，基板温度をＡｓ圧下で６４０℃ま
で上げて，ＧａＡｓ表面をガリウムリッチ（Ｇａ ric
h）な面（（１×１）Ｇａ面）とする。このとき窒素
（Ｎ）源となるジメチルヒドラジン（ＤＭＨｙ）を導入
し，Ａｓ圧をきる。これによって，２０オングストロー
ム程度の厚さを有する立方晶のＧａＮの薄膜２を形成す
る。ＧａＮ形成後，図１（ｂ）に示すように，金属マス
ク３を用いてＧａ４を金属マスク３の開口部に局所的に
つける。Ｇａ４を付けた後，図１（ｃ）に示すように金
属マスク３を外して，基板温度を６１０℃まで上昇さ
せ，図１（ｄ）に示すように，Ｇａ４を付けたＧａＮの
薄膜２の一部を選択的に除去し，パターニングする。図
１（ｄ）においては，孔部２ａが形成されている。Ｇａ
Ｎの薄膜２をマスクとしてパターニングした後，図１
（ｅ）に示すように，基板温度を４３０℃とし，ジメチ
ルアルミニウムハイドライド（ＤＭＡｌＨ）をトリスジ
メチルアミノアルシン（ＴＤＭＡＡｓ）を用いてアルミ
ニウムヒ素（ＡｌＡｓ）５の選択成長を行った。即ち，
ＤＭＡｌＨを１．５×１０-7Ｔｏｒｒ，ＴＤＭＡＡｓを
１．０×１０-7Ｔｏｒｒとして，超高真空装置内に導入
した。その結果，ＡｌＡｓ５をＧａＮの薄膜２からなる
マスク（以下，ＧａＮマスク２と呼ぶ）のパターニング
した領域２ａのみに選択成長することができた。また，
ＧａＮマスク２上には，ＡｌＡｓは堆積しなかった。以
上のことから，ＤＭＡｌＨとＴＤＭＡＡｓの組み合わせ
は，ＡｌＡｓの結晶成長に有効であった。Referring to FIG. 1A, GaAs (10
0) Substrate 1 is used first in the ultra-vacuum apparatus.
After removing the natural oxide film on the surface, G at the substrate temperature of 580 ° C
Epitaxial growth of aAs is performed. After epitaxially growing GaAs, the substrate temperature is raised to 640 ° C. under As pressure, and the GaAs surface is gallium rich.
h) other surface ((1 × 1) Ga surface). At this time, dimethylhydrazine (DMHy), which is a nitrogen (N) source, is introduced to cut off the As pressure. As a result, a cubic GaN thin film 2 having a thickness of about 20 Å is formed. After forming GaN, as shown in FIG. 1B, Ga4 is locally applied to the opening of the metal mask 3 using the metal mask 3. After applying Ga4, the metal mask 3 is removed as shown in FIG. 1 (c), the substrate temperature is raised to 610 ° C., and the GaN thin film 2 with Ga4 is added as shown in FIG. 1 (d). Partially remove and pattern. In FIG. 1D, the hole 2a is formed. Ga
After patterning using the N thin film 2 as a mask, FIG.
As shown in (e), the substrate temperature was set to 430 ° C., and dimethyl aluminum hydride (DMAlH) was selectively grown using trisdimethylaminoarsine (TDMAAs) to grow aluminum arsenic (AlAs) 5. That is,
DMAlH was introduced into the ultra-high vacuum apparatus at 1.5 × 10 −7 Torr and TDMAAs at 1.0 × 10 −7 Torr. As a result, AlAs5 could be selectively grown only on the patterned region 2a of the mask made of the GaN thin film 2 (hereinafter referred to as GaN mask 2). Also,
AlAs was not deposited on the GaN mask 2. From the above, the combination of DMAlH and TDMAAs was effective for the crystal growth of AlAs.
【００２２】ついでながら，ＡｌＡｓの選択成長は，Ｇ
ａＡｓ基板上の全面成長において，ＤＭＡｌＨとＴＤＭ
ＡＡｓを用いて同上の圧力条件において，５００℃以下
の成長温度で行なったとき，ＡｌＡｓのスムースな成長
面が得られた。又，成長温度を５００℃以上にするとＡ
ｌＡｓの成長表面は荒れて良好な結晶表面が得られなか
った。Incidentally, the selective growth of AlAs is G
DMAlH and TDM in the entire surface growth on aAs substrate
A smooth growth surface of AlAs was obtained when the growth was performed at a temperature of 500 ° C. or lower under the same pressure conditions using AAs. Also, when the growth temperature is set to 500 ° C or higher, A
The growth surface of lAs was rough and a good crystal surface could not be obtained.
【００２３】更に，比較例の為に，ＤＭＡｌＨとＡｓ4
の組み合わせでＡｌＡｓの成長も試みて見た。この場
合，ＤＭＡｌＨを１．５×１０-7Ｔｏｒｒ，Ａｓ4 を
１．５×１０-6Ｔｏｒｒとして，成長温度を変えてＡｌ
Ａｓの成長を試みたが，どの成長温度でもスムースな表
面が得られなかった。Further, for comparison, DMAlH and As 4
The growth of AlAs was also tried by the combination of. In this case, DMAlH was set to 1.5 × 10 −7 Torr, As 4 was set to 1.5 × 10 −6 Torr, and the growth temperature was changed to obtain Al.
Attempts were made to grow As, but no smooth surface was obtained at any growth temperature.
【００２４】したがって，本発明の実施例１において
は，ＤＭＡｌＨとＴＤＭＡＡｓを用いて，成長温度５０
０℃以下でＡｌＡｓを全面成長した場合においてのみ，
スムースな表面を得ることができた。Therefore, in Example 1 of the present invention, a growth temperature of 50% was used by using DMAlH and TDMAAs.
Only when AlAs is entirely grown below 0 ° C,
It was possible to obtain a smooth surface.
【００２５】また，本発明の実施例１の応用例として，
実施例１の条件に，更に，トリメチルガリウム（ＴＭ
Ｇ）を１．５×１０-7Ｔｏｒｒ導入し，ＡｌＧａＡｓの
混晶の全面成長を試みたが，この場合も，非常にスムー
スな表面を得ることができた。したがって，実施例１を
応用したＤＭＡｌＨ，ＴＭＧ，及びＴＤＭＡＡｓを組み
合わせたＡｌＧａＡｓの結晶成長にも有効な結果を得る
ことができた。As an application example of the first embodiment of the present invention,
In addition to the conditions of Example 1, trimethylgallium (TM
G) was introduced at 1.5 × 10 −7 Torr and an attempt was made to grow a mixed crystal of AlGaAs over the entire surface. In this case, a very smooth surface could be obtained. Therefore, it was possible to obtain an effective result for the crystal growth of AlGaAs in which DMAlH, TMG, and TDMAAs to which Example 1 was applied are combined.
【００２６】（実施例２）実施例２においては，実施例
１のＧａＮマスクに換えて，ＧａＡｓ酸化膜を用いた以
外は同様な真空一貫プロセスによるＡｌＡｓの選択成長
を行った。その手順は，まず，ＧａＡｓ（１００）基板
上に１０Ｔｏｒｒの酸素ガスを真空装置内に導入し，こ
の基板表面にＧａＡｓ酸化膜をハロゲンランプの光照射
によって形成する。酸化膜形成後，メタルＧａをマスク
上に局所的に付け，その後５４０℃でＧａを付けたＧａ
Ａｓ酸化膜を熱脱離させた。これによって，ＧａＡｓ酸
化膜に開口部を設けた。その後，ＤＭＡｌＨとＴＤＭＡ
Ａｓを超高真空装置内に導入し，基板温度４３０℃，Ａ
ｌＡｓの選択成長を試みた。その結果，ＧａＡｓ酸化膜
の開口部のみＡｌＡｓの選択成長を行うことができた。Example 2 In Example 2, selective growth of AlAs was performed by the same vacuum consistent process except that a GaAs oxide film was used instead of the GaN mask of Example 1. The procedure is as follows. First, oxygen gas of 10 Torr is introduced into a vacuum apparatus on a GaAs (100) substrate, and a GaAs oxide film is formed on the surface of the substrate by light irradiation of a halogen lamp. After forming the oxide film, metal Ga was locally attached on the mask, and then Ga was attached at 540 ° C.
The As oxide film was thermally desorbed. This provided an opening in the GaAs oxide film. Then DMAlH and TDMA
Introducing As into the ultra-high vacuum equipment, the substrate temperature is 430 ℃,
An attempt was made to selectively grow 1As. As a result, it was possible to selectively grow AlAs only in the opening of the GaAs oxide film.
【００２７】（実施例３）ＧａＮマスク，又はＧａＡｓ
酸化マスクを用い，ＤＭＡｌＨとＴＤＭＡＡｓの組み合
わせの代わりに，ジメチルエチルアミンアラン（（ＣＨ
3)2 Ｃ2 Ｈ5 ＮＡｌＨ3 ）とＴＤＭＡＡｓの組み合わせ
を用いた以外は，実施例１及び実施例２と同様にした。
その結果，ＡｌＡｓの選択成長が実現できた。(Example 3) GaN mask or GaAs
Using an oxidation mask, instead of the combination of DMAlH and TDMAAs, dimethylethylamine alane ((CH
3) Same as Example 1 and Example 2 except that a combination of 2 C 2 H 5 NAlH 3 ) and TDMAAs was used.
As a result, selective growth of AlAs was realized.
【００２８】（実施例４）また，上記実施例１乃至３と
同様に，ＡｌＧａＡｓの選択成長において，原料ガスの
組み合わせとして，Ｇａ源としてトリメチルガリウム
（ＴＭＧ），又はトリエチルガリウム（ＴＥＧ）とし，
Ａｌ源としては，ジメチルアルミハイドライド（ＤＭＡ
ｌＨ）又はジメチルエチルアミンアランとし，さらにＡ
ｓ源としては，トリスジメチルアミノアルシン（ＴＤＭ
ＡＡｓ）を用いて行うことができた。(Fourth Embodiment) Further, as in the first to third embodiments, in the selective growth of AlGaAs, trimethylgallium (TMG) or triethylgallium (TEG) is used as a Ga source as a combination of source gases,
As an Al source, dimethyl aluminum hydride (DMA
1H) or dimethylethylamine alane, and A
As the s source, trisdimethylaminoarsine (TDM
Could be done using AAs).
【００２９】尚，本発明はＡｌＡｓ，ＡｌＧａＡｓ，Ａ
ｌＮ，ＡｌＧａＮ等のＡｌ系のすべての化合物半導体の
結晶成長にも応用できる。The present invention is based on AlAs, AlGaAs, A
It can also be applied to the crystal growth of all Al-based compound semiconductors such as 1N and AlGaN.
【００３０】[0030]
【発明の効果】以上，説明したように，本発明において
は，Ａｌ系の化合物半導体による真空一貫プロセスを用
いる選択成長が可能となり，微細構造を目指す光デバイ
ス，又は電子デバイスの構造作成が可能となり工業的に
大いに役立つＡｌ系化合物半導体の結晶成長方法を提供
することができる。As described above, according to the present invention, it is possible to perform selective growth using an Al-based compound semiconductor using a vacuum integrated process, and it is possible to create a structure of an optical device or an electronic device aiming at a fine structure. It is possible to provide a crystal growth method of an Al-based compound semiconductor that is industrially very useful.
【図１】（ａ）〜（ｅ）は本発明の実施例１に係るＡｌ
系化合物半導体の結晶成長方法の各工程を順に示する断
面図である。1A to 1E are Al according to a first embodiment of the present invention.
It is sectional drawing which shows each process of the crystal growth method of a series compound semiconductor in order.
１ 基板 ２ 薄膜 ３ 金属マスク ４ ガリウム（Ｇａ） ５ アルミニウムヒ素（ＡｌＡｓ） 1 Substrate 2 Thin Film 3 Metal Mask 4 Gallium (Ga) 5 Aluminum Arsenic (AlAs)
Claims (12)
ー法を用いるＡｌ系化合物半導体結晶成長を行う方法に
おいて，前記有機金属ガスは，アルキルアルミニウム類
又はアミンアラン類によって示される有機金属ガスの少
なくとも一種を含むことを特徴とするＡｌ系化合物半導
体の結晶成長方法。1. A method for growing an Al-based compound semiconductor crystal using a molecular beam epitaxy method using an organometallic gas, wherein the organometallic gas is at least one of organometallic gases represented by alkylaluminums or amine alanes. A method for growing a crystal of an Al-based compound semiconductor, comprising:
前記アルキルアルミニウムは，ジメチルアルミニウムハ
イドライドであり，前記アミンアラン類はジメチルエチ
ルアミンアランであることを特徴とするＡｌ系化合物半
導体の結晶成長方法。2. The crystal growth method according to claim 1, wherein
The crystal growth method of an Al-based compound semiconductor, wherein the alkylaluminum is dimethylaluminum hydride and the amine alane is dimethylethylamine alane.
晶成長方法において，前記Ａｌ系化合物半導体は，Ａｌ
を必須成分とするIII 族元素の少なくとも一種と，Ｖ族
元素の少なくとも一種であることを特徴とするＡｌ系化
合物半導体の結晶成長方法。3. The crystal growth method for an Al-based compound semiconductor according to claim 1, wherein the Al-based compound semiconductor is Al.
1. A crystal growth method for an Al-based compound semiconductor, which comprises at least one group III element containing at least one element and at least one group V element.
晶成長方法において，前記有機金属ガスは，前記III 族
元素を含むIII 族有機金属ガスと，前記Ｖ族元素を含む
Ｖ族有機金属ガスとの混合ガスからなり，前記Ｖ族有機
金属ガスと前記ＩＩＩ族有機金属ガスとの混合比の値
は，２未満であることを特徴とするＡｌ系化合物半導体
の結晶成長方法。4. The crystal growth method for an Al-based compound semiconductor according to claim 3, wherein the organometallic gas is a group III organometallic gas containing the group III element and a group V organometallic gas containing the group V element. And a mixed ratio value of the group V organometallic gas and the group III organometallic gas is less than 2.
晶成長方法において，前記有機金属ガスを用いて多くと
も５００℃の温度で結晶成長させることを特徴とするＡ
ｌ系化合物半導体の結晶成長方法。5. The crystal growth method for an Al-based compound semiconductor according to claim 3, wherein the crystal growth is performed at a temperature of at most 500 ° C. using the organometallic gas.
Method for growing crystal of l-based compound semiconductor.
晶成長方法において，前記Ａｌ系化合物半導体は，Ａｌ
Ａｓ，ＡｌＧａＡｓ，及びＡｌＧａＩｎＡｓから選択さ
れた少なくとも一種であることを特徴とするＡｌ系化合
物半導体の結晶成長方法。6. The crystal growth method for an Al-based compound semiconductor according to claim 3, wherein the Al-based compound semiconductor is Al.
A crystal growth method for an Al-based compound semiconductor, which is at least one selected from As, AlGaAs, and AlGaInAs.
晶成長方法において，前記ＩＩＩ族元素はＡｌを必ず含
むＡｌ，Ｇａ，Ｉｎから選択された少なくとも一種から
なり，前記Ｖ族元素は，Ａｓ及びＮのうちから選択され
た少なくとも一種であることを特徴とするＡｌ系化合物
半導体の結晶成長方法。7. The crystal growth method for an Al-based compound semiconductor according to claim 3, wherein the group III element is at least one selected from Al, Ga, and In, which always contains Al, and the group V element is As. And at least one selected from N. A method for growing a crystal of an Al-based compound semiconductor.
晶成長方法において，前記ＩＩＩ族元素がＧａを含む場
合，前記ＩＩＩ族有機金属ガスは，アルキルガリウムを
含むことを特徴とするＡｌ系化合物半導体の結晶成長方
法。8. The Al-based compound semiconductor crystal growth method according to claim 7, wherein when the Group III element contains Ga, the Group III organometallic gas contains alkylgallium. Semiconductor crystal growth method.
晶成長方法において，前記アルキルガリウムは，メチル
ガリウム及びエチルガリウムの内の少なくとも一種であ
ることを特徴とするＡｌ系化合物半導体の結晶成長方
法。9. The crystal growth method for an Al-based compound semiconductor according to claim 8, wherein the alkyl gallium is at least one of methyl gallium and ethyl gallium. .
結晶成長方法において，前記Ｖ族元素がＡｓを含む場
合，前記Ｖ族有機金属ガスは，アミノアルシンを含むこ
とを特徴とするＡｌ系化合物半導体の結晶成長方法。10. The Al-based compound semiconductor crystal growth method according to claim 7, wherein when the V-group element contains As, the V-group organometallic gas contains aminoarsine. Semiconductor crystal growth method.
の結晶成長方法において，前記アミノアルシンは，トリ
スジメチルアミノアルシンであることを特徴とするＡｌ
系化合物半導体の結晶成長方法。11. The crystal growth method for an Al-based compound semiconductor according to claim 10, wherein the aminoarsine is trisdimethylaminoarsine.
Method for growing crystal of compound semiconductor
のＡｌ系化合物半導体の結晶成長方法において，前記結
晶成長は，ＧａＮマスクとＧａＡｓ酸化物マスクを用い
た真空一貫プロセスに用いるＡｌ系化合物半導体の選択
的結晶成長であることを特徴とするＡｌ系化合物半導体
の結晶成長方法。12. The crystal growth method for an Al-based compound semiconductor according to claim 1, wherein the crystal growth is an Al-based compound used in a vacuum integrated process using a GaN mask and a GaAs oxide mask. A method for growing a crystal of an Al-based compound semiconductor, which is selective crystal growth of a semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29961594A JP2873991B2 (en) | 1994-12-02 | 1994-12-02 | Crystal growth method for Al-based compound semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29961594A JP2873991B2 (en) | 1994-12-02 | 1994-12-02 | Crystal growth method for Al-based compound semiconductor |
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| Publication Number | Publication Date |
|---|---|
| JPH08157299A true JPH08157299A (en) | 1996-06-18 |
| JP2873991B2 JP2873991B2 (en) | 1999-03-24 |
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ID=17874919
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29961594A Expired - Lifetime JP2873991B2 (en) | 1994-12-02 | 1994-12-02 | Crystal growth method for Al-based compound semiconductor |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100591621B1 (en) * | 2002-04-19 | 2006-06-21 | 제이에스알 가부시끼가이샤 | A composition for forming a conductive film, a conductive film, and a forming method thereof |
| US7645340B2 (en) | 2002-04-09 | 2010-01-12 | Tokyo University Agriculture And Technology Tlo Co., Ltd. | Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor |
-
1994
- 1994-12-02 JP JP29961594A patent/JP2873991B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7645340B2 (en) | 2002-04-09 | 2010-01-12 | Tokyo University Agriculture And Technology Tlo Co., Ltd. | Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor |
| KR100591621B1 (en) * | 2002-04-19 | 2006-06-21 | 제이에스알 가부시끼가이샤 | A composition for forming a conductive film, a conductive film, and a forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2873991B2 (en) | 1999-03-24 |
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