JPH08148441A - Vertical furnace for semiconductor manufacturing device - Google Patents
Vertical furnace for semiconductor manufacturing deviceInfo
- Publication number
- JPH08148441A JPH08148441A JP30546494A JP30546494A JPH08148441A JP H08148441 A JPH08148441 A JP H08148441A JP 30546494 A JP30546494 A JP 30546494A JP 30546494 A JP30546494 A JP 30546494A JP H08148441 A JPH08148441 A JP H08148441A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- tube
- shielding
- inner tube
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は縦型ＣＶＤ装置等、半導
体製造装置の縦型炉の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a vertical furnace for a semiconductor manufacturing apparatus such as a vertical CVD apparatus.
【０００２】[0002]
【従来の技術】図３に於いて、従来の半導体製造装置の
縦型炉について説明する。2. Description of the Related Art A conventional vertical furnace of a semiconductor manufacturing apparatus will be described with reference to FIG.
【０００３】上端が閉塞された筒状のヒータ１内部に反
応管が設けられ、該反応管はアウタチューブ２、インナ
チューブ３から構成される。上端が閉塞されたアウタチ
ューブ２の内部に筒状のインナチューブ３が同心に設け
られ、該インナチューブ３と前記アウタチューブ２とが
成す筒状の空間４は下端が閉塞され上端が開放されてい
る。前記インナチューブ３の内部下端にガス導入ノズル
５が連通し、前記空間４の下端には排気管６が連通して
いる。A reaction tube is provided inside a cylindrical heater 1 whose upper end is closed, and the reaction tube is composed of an outer tube 2 and an inner tube 3. A cylindrical inner tube 3 is concentrically provided inside the outer tube 2 having a closed upper end, and a cylindrical space 4 formed by the inner tube 3 and the outer tube 2 has a closed lower end and an open upper end. There is. A gas introduction nozzle 5 communicates with the inner lower end of the inner tube 3, and an exhaust pipe 6 communicates with the lower end of the space 4.
【０００４】前記インナチューブ３の内部には下方より
ボート７が装入される様になっており、該ボート７には
ウェーハ８が水平姿勢で多段に装填され、ボート７が装
入された状態ではアウタチューブ２内は気密となる。前
記ヒータ１によりインナチューブ３内が所要の温度に加
熱され、前記ガス導入ノズル５から反応ガスが導入さ
れ、ウェーハ８表面に薄膜が気相生成する。反応後のガ
スは前記排気管６より排出される。A boat 7 is loaded into the inner tube 3 from below. Wafers 8 are loaded in a horizontal posture in multiple stages in the boat 7 and the boat 7 is loaded. Then, the inside of the outer tube 2 becomes airtight. The inside of the inner tube 3 is heated to a required temperature by the heater 1, a reaction gas is introduced from the gas introduction nozzle 5, and a thin film is vapor-phased on the surface of the wafer 8. The gas after the reaction is discharged from the exhaust pipe 6.
【０００５】[0005]
【発明が解決しようとする課題】上記した従来の半導体
製造装置の縦型炉に於いて、炉内のウェーハ処理領域は
側方からヒータにより加熱され高温となっているが、ア
ウタチューブ２の上端方向、下端方向では熱源が無く低
温部となっている。従って、炉内では高温部と低温部が
並存している。In the conventional vertical furnace of the above-mentioned semiconductor manufacturing apparatus, the wafer processing area in the furnace is heated by the heater from the side and has a high temperature. There is no heat source in the lower and lower directions, and the temperature is low. Therefore, a high temperature part and a low temperature part coexist in the furnace.
【０００６】この状態での熱の流れを模式的に示せば図
４（Ａ）の如くなる。即ち、ヒータ１からアウタチュー
ブ２、インナチューブ３を貫通して熱が流入し、内部の
熱は上方、下方に流出して熱的均衡が得られている。The heat flow in this state is schematically shown in FIG. 4 (A). That is, the heat flows from the heater 1 through the outer tube 2 and the inner tube 3, and the heat inside flows out upward and downward to obtain a thermal balance.
【０００７】ところが、炉内に於いてウェーハの成膜処
理を行うと、インナチューブ３の内面、アウタチューブ
２の内面の高温部には生成物が付着して膜９が形成され
る。膜が形成されると熱伝達抵抗が増えるのでアウタチ
ューブ２、インナチューブ３を貫通してウェーハに到達
する輻射熱による熱流入が減少する。一方、上方、下方
の低温部には膜が生成し難く、熱の上方、下方への熱移
動を阻害するものがないので、この状態での熱の流れを
模式的に示せば図４（Ｂ）の如くなり、炉内への熱の流
入量に対して流出量が多く、熱の流入量と流出量が均衡
する迄炉内の温度が低下する。即ち、ウェーハの温度が
低下する。However, when the film forming process of the wafer is performed in the furnace, the product adheres to the inner surface of the inner tube 3 and the high temperature portion of the inner surface of the outer tube 2 to form the film 9. Since the heat transfer resistance increases when the film is formed, the heat inflow due to the radiant heat reaching the wafer through the outer tube 2 and the inner tube 3 is reduced. On the other hand, it is difficult to form a film in the upper and lower low temperature parts, and there is nothing that hinders the heat transfer to the upper and lower parts. Therefore, if the heat flow in this state is schematically shown in FIG. ), The outflow amount is large relative to the heat inflow amount into the furnace, and the temperature in the furnace decreases until the heat inflow amount and the heat inflow amount are balanced. That is, the temperature of the wafer decreases.
【０００８】従って、ウェーハの成膜処理が進むと共に
ウェーハ周囲の温度環境が変化し、ウェーハ温度に影響
を与え、ウェーハの温度が低下し、成膜の膜厚が変化す
るという結果を招いていた。この為、処理毎の成膜再現
性が悪いという問題があった。Therefore, as the film forming process of the wafer progresses, the temperature environment around the wafer changes, which affects the wafer temperature, lowers the temperature of the wafer, and changes the film thickness of the film. . Therefore, there is a problem that the film forming reproducibility for each process is poor.
【０００９】本発明は斯かる実情に鑑み、インナチュー
ブ、或はアウタチューブ等反応管にに膜が形成されても
ウェーハ等被処理物の温度変化を抑止し、膜厚再現性を
向上させようとするものである。In view of the above situation, the present invention suppresses the temperature change of an object to be treated such as a wafer even if a film is formed on a reaction tube such as an inner tube or an outer tube, and improves the film thickness reproducibility. It is what
【００１０】[0010]
【課題を解決するための手段】本発明は、炉内の基板処
理領域の上方、下方に反応管と少なくとも同等の輻射熱
透過性を有する熱遮蔽体を設け、前記基板処理領域を熱
輻射に関して閉塞された空間としたことを特徴とするも
のである。According to the present invention, a heat shield having radiant heat permeability at least equal to that of a reaction tube is provided above and below a substrate processing region in a furnace, and the substrate processing region is closed with respect to heat radiation. It is characterized by the fact that it is a closed space.
【００１１】[0011]
【作用】炉内の熱移動は熱輻射が支配的であり、基板処
理空間を熱輻射に関して閉塞された空間とすることで、
基板処理空間に面する壁面に膜が生成する如何に拘ら
ず、入熱量と出熱量が均衡し、壁面に膜が生成したこと
で基板処理空間の温度が変化することが防止される。[Function] The heat transfer in the furnace is dominated by heat radiation, and by making the substrate processing space a closed space for heat radiation,
Regardless of whether a film is formed on the wall surface facing the substrate processing space, the heat input amount and the heat output amount are balanced, and the temperature of the substrate processing space is prevented from changing due to the film formation on the wall surface.
【００１２】[0012]
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１３】尚、図１中、図３中で示したものと同様の
構成物には同符号を付してある。In FIG. 1, the same components as those shown in FIG. 3 are designated by the same reference numerals.
【００１４】上端が閉塞された筒状のヒータ１内部に上
端が閉塞されたアウタチューブ２が設けられ、該アウタ
チューブ２の内部に筒状のインナチューブ３が同心に設
けられる。該インナチューブ３の上端に熱遮蔽端板１０
を設ける。該熱遮蔽端板１０には中心に孔１１が穿設さ
れている。An outer tube 2 having a closed upper end is provided inside a cylindrical heater 1 having a closed upper end, and a cylindrical inner tube 3 is concentrically provided inside the outer tube 2. A heat shield end plate 10 is provided on the upper end of the inner tube 3.
To provide. A hole 11 is formed in the center of the heat shield end plate 10.
【００１５】該インナチューブ３と前記アウタチューブ
２とが成す筒状の空間４は下端が閉塞され上端が開放さ
れている。前記インナチューブ３の内部下端にガス導入
ノズル５が連通し、前記空間４の下端には排気管６が連
通している。A cylindrical space 4 formed by the inner tube 3 and the outer tube 2 has a lower end closed and an upper end open. A gas introduction nozzle 5 communicates with the inner lower end of the inner tube 3, and an exhaust pipe 6 communicates with the lower end of the space 4.
【００１６】前記インナチューブ３の内部には下方よ
り、ウェーハ８が水平姿勢で多段に装填されボート７が
装入され、アウタチューブ２内は気密となる。Inside the inner tube 3, wafers 8 are horizontally loaded from the bottom in a horizontal posture in multiple stages, and boats 7 are loaded therein, so that the inside of the outer tube 2 is airtight.
【００１７】前記ボート７の下部には熱遮蔽外フランジ
１２が形成されており、前記インナチューブ３の下部内
面には熱遮蔽内フランジ１３が形成され、ボート７をイ
ンナチューブ３内に装入した状態で、前記熱遮蔽外フラ
ンジ１２が熱遮蔽内フランジ１３の下方に位置し、相互
の先端がオーバラップする様になっている。A heat shield outer flange 12 is formed in the lower portion of the boat 7, and a heat shield inner flange 13 is formed in the lower inner surface of the inner tube 3, and the boat 7 is inserted into the inner tube 3. In this state, the heat-shielding outer flange 12 is located below the heat-shielding inner flange 13 so that their tips overlap each other.
【００１８】前記熱遮蔽外フランジ１２、熱遮蔽内フラ
ンジ１３はアウタチューブ２、インナチューブ３と同材
質、又は同等の熱透過性を有する材質とする。The heat-shielding outer flange 12 and the heat-shielding inner flange 13 are made of the same material as the outer tube 2, the inner tube 3 or a material having the same heat permeability.
【００１９】前記した様に、炉内での熱移動は輻射が支
配的であり、熱輻射を考慮すると本実施例は図２（Ａ）
で示される様に、ウェーハ処理領域は全周囲が囲まれた
空間と見なされる。As described above, the heat transfer in the furnace is dominated by radiation. Considering the heat radiation, this embodiment has a structure shown in FIG.
As indicated by, the wafer processing area is considered to be a space surrounded by the entire circumference.
【００２０】アウタチューブ２、インナチューブ３内面
に膜が形成されてない状態では、ヒータ１からアウタチ
ューブ２、インナチューブ３を貫通して熱が流入し、内
部の熱は前記熱遮蔽端板１０、熱遮蔽外フランジ１２、
熱遮蔽内フランジ１３を貫通して上方、下方に流出して
熱的均衡が得られている。In a state where no film is formed on the inner surfaces of the outer tube 2 and the inner tube 3, heat flows from the heater 1 through the outer tube 2 and the inner tube 3, and the internal heat is the heat shield end plate 10. , Heat shield outer flange 12,
Thermal balance is obtained by penetrating the heat shield inner flange 13 and flowing upward and downward.
【００２１】炉内に於いてウェーハの成膜処理を行う
と、図２（Ｂ）で示される様に、インナチューブ３の内
面、アウタチューブ２、熱遮蔽端板１０、熱遮蔽外フラ
ンジ１２、熱遮蔽内フランジ１３の内面には生成物が付
着して膜が形成される。膜が形成されると熱伝達抵抗が
増えるのでアウタチューブ２、インナチューブ３を貫通
してウェーハに到達する輻射熱による熱流入が減少する
と共に前記熱遮蔽端板１０、熱遮蔽外フランジ１２、熱
遮蔽内フランジ１３を貫通して流出する熱量も減少す
る。When the wafer is subjected to the film forming process in the furnace, as shown in FIG. 2B, the inner surface of the inner tube 3, the outer tube 2, the heat shield end plate 10, the heat shield outer flange 12, The product adheres to the inner surface of the heat shield inner flange 13 to form a film. Since the heat transfer resistance increases when the film is formed, the heat inflow due to the radiant heat that reaches the wafer through the outer tube 2 and the inner tube 3 is reduced, and the heat shield end plate 10, the heat shield outer flange 12, and the heat shield are provided. The amount of heat that passes through the inner flange 13 and flows out is also reduced.
【００２２】前記した様に、アウタチューブ２、インナ
チューブ３と熱遮蔽端板１０、熱遮蔽外フランジ１２、
熱遮蔽内フランジ１３とは輻射熱の透過率を同等にして
あるので、流入熱量と流出熱量とは均衡しており、ウェ
ーハ処理領域の温度は低下することはない。As described above, the outer tube 2, the inner tube 3, the heat shield end plate 10, the heat shield outer flange 12,
Since the radiant heat has the same transmittance as the heat shield inner flange 13, the inflow heat amount and the outflow heat amount are in balance, and the temperature of the wafer processing region does not decrease.
【００２３】而して、成膜条件が変化することなく膜厚
再現性が向上する。Thus, the film thickness reproducibility is improved without changing the film forming conditions.
【００２４】尚、前記孔１１は複数穿設してもよく、又
熱遮蔽外フランジ１２、熱遮蔽内フランジ１３のいずれ
か一方を省略してもよい。要は、輻射熱に関してウェー
ハ処理空間が閉塞空間状となればよい。A plurality of holes 11 may be provided, and either the heat shield outer flange 12 or the heat shield inner flange 13 may be omitted. The point is that the wafer processing space should be a closed space with respect to radiant heat.
【００２５】[0025]
【発明の効果】以上述べた如く本発明によれば、ウェー
ハ処理室に面する壁面の膜の有無にかかわらず、ウェー
ハ処理温度の変化を抑制したので、膜厚再現性が向上
し、製品品質、歩留まりが向上する等の優れた効果を発
揮する。As described above, according to the present invention, regardless of the presence or absence of the film on the wall surface facing the wafer processing chamber, the change in the wafer processing temperature is suppressed, so that the film thickness reproducibility is improved and the product quality is improved. Also, it exhibits excellent effects such as an improved yield.
【図１】本発明の一実施例を示す概略断面図である。FIG. 1 is a schematic sectional view showing an embodiment of the present invention.
【図２】（Ａ）（Ｂ）は該実施例に於ける熱移動の模式
図である。2A and 2B are schematic views of heat transfer in the example.
【図３】従来例を示す概略断面図である。FIG. 3 is a schematic cross-sectional view showing a conventional example.
【図４】（Ａ）（Ｂ）は該従来例に於ける熱移動の模式
図である。4A and 4B are schematic views of heat transfer in the conventional example.
１ ヒータ ２ アウタチューブ ３ インナチューブ ４ 空間 ５ ガス導入ノズル ６ 排気管 ７ ボート ８ ウェーハ １０ 熱遮蔽端板 １１ 孔 １２ 熱遮蔽外フランジ １３ 熱遮蔽内フランジ 1 Heater 2 Outer Tube 3 Inner Tube 4 Space 5 Gas Inlet Nozzle 6 Exhaust Pipe 7 Boat 8 Wafer 10 Heat Shield End Plate 11 Hole 12 Heat Shield Outer Flange 13 Heat Shield Inner Flange
Claims (1)
管と少なくとも同等の輻射熱透過性を有する熱遮蔽体を
設け、前記基板処理領域を熱輻射に関して閉塞された空
間としたことを特徴とする半導体製造装置の縦型炉。1. A heat shield having radiant heat permeability at least equal to that of a reaction tube is provided above and below a substrate processing region in a furnace, and the substrate processing region is a space closed with respect to heat radiation. Vertical furnace for semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30546494A JPH08148441A (en) | 1994-11-15 | 1994-11-15 | Vertical furnace for semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30546494A JPH08148441A (en) | 1994-11-15 | 1994-11-15 | Vertical furnace for semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08148441A true JPH08148441A (en) | 1996-06-07 |
Family
ID=17945467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30546494A Pending JPH08148441A (en) | 1994-11-15 | 1994-11-15 | Vertical furnace for semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08148441A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503079B2 (en) | 2001-01-15 | 2003-01-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| JP2009224765A (en) * | 2008-02-20 | 2009-10-01 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
-
1994
- 1994-11-15 JP JP30546494A patent/JPH08148441A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503079B2 (en) | 2001-01-15 | 2003-01-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| KR100491128B1 (en) * | 2001-01-15 | 2005-05-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | Method for making semiconductor apparatus and wafer processing apparatus |
| JP2009224765A (en) * | 2008-02-20 | 2009-10-01 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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