JPH0799297A - Solid-state image pick-up device - Google Patents
Solid-state image pick-up deviceInfo
- Publication number
- JPH0799297A JPH0799297A JP5260430A JP26043093A JPH0799297A JP H0799297 A JPH0799297 A JP H0799297A JP 5260430 A JP5260430 A JP 5260430A JP 26043093 A JP26043093 A JP 26043093A JP H0799297 A JPH0799297 A JP H0799297A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- liquid crystal
- image pick
- upper electrode
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 11
- 230000003321 amplification Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、テレビカメラにおいて
レンズによって結像した光学像を電気信号に変換する固
体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device for converting an optical image formed by a lens in a television camera into an electric signal.
【０００２】[0002]
【従来の技術】従来、ＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐ
ｌｅｄ Ｄｅｖｉｃｅ）やＢＡＳＩＳ（Ｂａｓｅ Ｓｏ
ｒｅｄ Ｉｍａｇｅ Ｓｅｎｓｏｒ）等固体撮像装置
は、シリコン半導体基板に画素を形成するフォトダイオ
ード、バイポーラトランジスタ等光電変換素子を２次元
マトリクス状に配置して画像を読み込む構成であった。2. Description of the Related Art Conventionally, a CCD (Charge Coup) is used.
red Device) and BASIS (Base So)
A solid-state imaging device such as a red image sensor has a configuration in which photoelectric conversion elements such as photodiodes and bipolar transistors forming pixels are arranged in a two-dimensional matrix on a silicon semiconductor substrate to read an image.
【０００３】[0003]
【発明が解決しようとする課題】しかし従来の撮像装置
の解像度は上記２次元状に配置された光電変換素子の画
素数で決定され、解像度を向上させるために画素数を増
加すると、点傷、線傷等欠陥の発生率が大きくなり、歩
留の低下を引き起こしていた。However, the resolution of the conventional image pickup device is determined by the number of pixels of the photoelectric conversion elements arranged in the above-mentioned two-dimensional manner, and if the number of pixels is increased to improve the resolution, point scratches, The occurrence rate of defects such as line scratches increased, and the yield was reduced.
【０００４】本発明はこのような問題点に鑑み、歩留等
問題を生じることなく解像度を向上させた固体撮像装置
の提供を目的とするものである。In view of such problems, it is an object of the present invention to provide a solid-state image pickup device having improved resolution without causing problems such as yield.
【０００５】[0005]
【課題を解決するための手段及び作用】本発明は半導体
基板上に２次元状に配置された光電変換素子と、該光電
変換素子の信号電荷を読み出す手段と、各光電変換素子
の直上に設けられたマイクロレンズと、各マイクロレン
ズの直上に設けられた複数のカラーフィルターとを有す
る固体撮像装置であって、上記カラーフィルターの各々
に対応する液晶駆動素子を有する液晶装置がオンチップ
で設けられていることを特徴とする固体撮像装置であ
る。The present invention provides a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, a means for reading out signal charges of the photoelectric conversion element, and a photoelectric conversion element provided directly above each photoelectric conversion element. An on-chip liquid crystal device having a liquid crystal driving element corresponding to each of the color filters. The solid-state imaging device is characterized in that
【０００６】本発明は、従来の固体撮像装置に液晶装置
をオンチップで搭載し、各カラーフィルターに液晶駆動
素子を対応させることにより、光電変換素子の画素数を
増加することなく解像度を向上させることができる。そ
のため、光電変換素子の増加に伴う前記問題を生じるこ
となく高い解像度の固体撮像装置を提供することができ
る。According to the present invention, a liquid crystal device is mounted on a chip in a conventional solid-state image pickup device, and a liquid crystal driving element is associated with each color filter, thereby improving resolution without increasing the number of pixels of a photoelectric conversion element. be able to. Therefore, it is possible to provide a high-resolution solid-state imaging device without causing the above-mentioned problems associated with an increase in photoelectric conversion elements.
【０００７】[0007]
（実施例１）図１に本発明の固体撮像装置の第１の実施
例の断面図を示す。本発明の固体撮像装置は、光信号を
電気信号へ変換する撮像素子と、その上に光信号を切替
えるための液晶駆動素子、及び両者の間に設けられたカ
ラーフィルター、マイクロレンズからなる光学系から構
成される。(Embodiment 1) FIG. 1 shows a sectional view of a first embodiment of the solid-state imaging device of the present invention. The solid-state imaging device of the present invention is an optical system including an imaging element for converting an optical signal into an electric signal, a liquid crystal driving element for switching the optical signal thereon, a color filter provided between the two, and a microlens. Composed of.
【０００８】本実施例において上記撮像素子はＣＣＤ撮
像素子であり、図１に示すように、Ｐ型埋め込み拡散層
２を有する半導体基板１に設けられたフォトダイオード
を形成するｎ+ 半導体領域３と、ＶＣＣＤ（垂直ＣＣ
Ｄ）を形成するｎ- 半導体領域４、酸化膜５を介して連
続して配設された複数の電荷転送ゲート電極６から構成
される。In the present embodiment, the image pickup device is a CCD image pickup device, and as shown in FIG. 1, an n + semiconductor region 3 forming a photodiode provided on a semiconductor substrate 1 having a P type buried diffusion layer 2 is formed. , VCCD (vertical CC
D), the n − semiconductor region 4 and a plurality of charge transfer gate electrodes 6 continuously arranged with an oxide film 5 interposed therebetween.
【０００９】上記各領域及び電極を作り込んだ半導体基
板１の表面に絶縁材料からなる平坦化層７を形成し、そ
の上にマイクロレンズ８を向け、さらにその上に平坦化
層９を設ける。絶縁材料の屈折率は、マイクロレンズ
８、平坦化層７、９の屈折率をそれぞれｎ1 、ｎ2 とす
るとｎ1 ＞ｎ2 の関係を満たしている。次に、平坦化層
９の上に偏光層１６、カラーフィルター１０、カラーフ
ィルター間の間隙に遮光層１５を設ける。ここで、撮像
素子のフォトダイオード１素子につき、マイクロレンズ
は１個、カラーフィルター１０は４個対応するように設
ける。４個のカラーフィルター１０に入射した平行光は
マイクロレンズ８によって全て１つのフォトダイオード
に入射する。A flattening layer 7 made of an insulating material is formed on the surface of the semiconductor substrate 1 in which the above-mentioned regions and electrodes are formed, a microlens 8 is directed thereon, and a flattening layer 9 is further provided thereon. The refractive index of the insulating material satisfies the relationship of n 1 > n 2 when the refractive indexes of the microlens 8 and the flattening layers 7 and 9 are n 1 and n 2 , respectively. Next, the polarizing layer 16, the color filter 10, and the light shielding layer 15 are provided in the gap between the color filters on the flattening layer 9. Here, one microlens and four color filters 10 are provided for each photodiode of the image pickup device. The parallel light incident on the four color filters 10 is incident on one photodiode by the microlens 8.
【００１０】次にカラーフィルター１０の上に、液晶１
２に電圧を印加する下電極１１を設ける。基板１３を用
意し、上電極１４と、該電極へ信号を印加するためのＴ
ＦＴ（薄膜トランジスタ）、該ＴＦＴへ信号を送る信号
線、ＴＦＴ駆動用駆動線、画素ＴＦＴを駆動する水平・
垂直シフトレジスタを形成し、所定の間隔を持って電極
１１に対向配置させ、液晶を挟持する。電極１１及び１
４はＩＴＯ（Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ）等の
透明電極である。電極１４はカラーフィルター１０に１
対１に対応している。Next, the liquid crystal 1 is placed on the color filter 10.
A lower electrode 11 for applying a voltage to 2 is provided. A substrate 13 is prepared, and an upper electrode 14 and a T for applying a signal to the electrode are provided.
FT (thin film transistor), a signal line for transmitting a signal to the TFT, a driving line for driving the TFT, a horizontal line for driving the pixel TFT.
A vertical shift register is formed, and it is arranged to face the electrode 11 with a predetermined interval, and the liquid crystal is sandwiched. Electrodes 11 and 1
Reference numeral 4 is a transparent electrode such as ITO (Indium Tin Oxide). The electrode 14 is one in the color filter 10.
It corresponds to one-to-one.
【００１１】以上の構成からなる本実施例の装置の動作
を説明する。図２に本実施例の１画素の構成の平面図を
示す。図３は図２のＡ−Ａ’行の断面図であり、（ａ）
はその初期状態である。液晶駆動素子はノ−マリーブラ
ックモードで動作させるため、（ａ）に示した初期状態
では液晶１２には電圧を印加せず、遮光状態となってお
り、撮像素子のフォトダイオードには光が入らない。The operation of the apparatus of this embodiment having the above configuration will be described. FIG. 2 shows a plan view of the configuration of one pixel of this embodiment. FIG. 3 is a sectional view taken along line AA ′ of FIG.
Is its initial state. Since the liquid crystal drive element is operated in the normally black mode, no voltage is applied to the liquid crystal 12 in the initial state shown in (a), and the liquid crystal drive element is in a light-shielding state, so that light does not enter the photodiode of the image pickup element. Absent.
【００１２】次に、（ｂ）に示すように、液晶駆動素子
の上電極１４に信号を印加し、液晶１２に電圧を加えて
透光状態とする。上電極１４に入射する光信号はカラー
フィルター１０、マイクロレンズ８を通って撮像素子の
フォトダイオードに入り、電気信号に変換されて電子電
荷として蓄積される。Next, as shown in (b), a signal is applied to the upper electrode 14 of the liquid crystal driving element, and a voltage is applied to the liquid crystal 12 to bring it into a transparent state. The optical signal incident on the upper electrode 14 passes through the color filter 10 and the microlens 8 and enters the photodiode of the image pickup device, where it is converted into an electric signal and stored as an electronic charge.
【００１３】次に（ｃ）に示すように、液晶駆動素子の
上電極１４の信号を切り、遮光状態とする。同時にフォ
トダイオードのｎ+ 半導体領域３に蓄積された電子電荷
をＶＣＣＤ４に転送し、さらにＶＣＣＤ４を駆動し、画
素信号を撮像素子の外部へ出力する。Next, as shown in (c), the signal of the upper electrode 14 of the liquid crystal drive element is cut off to bring it into a light shielding state. At the same time, the electronic charge accumulated in the n + semiconductor region 3 of the photodiode is transferred to the VCCD 4, the VCCD 4 is driven, and the pixel signal is output to the outside of the image sensor.
【００１４】次に（ｄ）に示すように、（ｂ）の時とは
異なる液晶駆動素子の上電極１４に信号を印加し、液晶
１２に電圧を加え透光状態にする。選択された液晶１２
を透過した光信号は（ｂ）の場合と同様に、カラーフィ
ルター１０、マイクロレンズ８を通って撮像素子のフォ
トダイオードに入射し、電気信号に変換され、電子電荷
として蓄積される。Next, as shown in (d), a signal is applied to the upper electrode 14 of the liquid crystal driving element, which is different from that in (b), and a voltage is applied to the liquid crystal 12 to bring it into a transparent state. Selected liquid crystal 12
Similarly to the case of (b), the optical signal that has passed through is incident on the photodiode of the image pickup element through the color filter 10 and the microlens 8, is converted into an electric signal, and is accumulated as an electronic charge.
【００１５】次に（ｅ）に示すように上電極１４の信号
を切り、遮光状態とすると同時にフォトダイオードのｎ
+ 半導体領域３に蓄積された電子電荷をＶＣＣＤ４に転
送し、さらにＶＣＣＤ４を駆動し、画素信号を撮像素子
の外部へ出力する。出力が終了した時点で（ａ）の初期
状態に戻り、引き続き同じ動作を図２のＢ−Ｂ’行にお
いて繰り返し、画像信号を読み込む。Next, as shown in (e), the signal of the upper electrode 14 is cut off to bring it into a light-shielded state, and at the same time, the n of the photodiode is turned on.
+ Transfer the electronic charges accumulated in the semiconductor region 3 to the VCCD 4, drive the VCCD 4, and output the pixel signal to the outside of the image sensor. When the output is completed, the state returns to the initial state of (a), and the same operation is continuously repeated in the line BB ′ in FIG. 2 to read the image signal.
【００１６】本実施例によれば、一つの撮像素子に対し
４個の液晶駆動素子が対応するために、同じ画素数の撮
像装置で４倍の解像度が実現する。According to the present embodiment, since four liquid crystal driving elements correspond to one image pickup element, the image pickup apparatus having the same number of pixels can realize four times the resolution.
【００１７】（実施例２）図４に本発明の第２の実施例
を示す。本実施例の特徴は、撮像素子のフォトダイオー
ド１素子に対してＶＣＣＤ４を左右に１つずつ、計２個
設けた点である。以下に本実施例の動作について説明す
る。(Embodiment 2) FIG. 4 shows a second embodiment of the present invention. The feature of this embodiment is that one VCCD 4 is provided on each of the left and right sides of one photodiode of the image pickup device, that is, two VCCDs are provided in total. The operation of this embodiment will be described below.
【００１８】図５は本実施例の固体撮像装置の１画素の
平面図であり、図６は図５におけるＡ−Ａ’行断面図で
ある。図６において（ａ）は初期状態である。本実施例
の液晶駆動素子はノーマリーブラックモードで動作させ
るため、初期状態では液晶１２に電圧は印加されず、遮
光状態となっている。従って撮像素子のフォトダイオー
ドには光は入らない。FIG. 5 is a plan view of one pixel of the solid-state image pickup device of this embodiment, and FIG. 6 is a sectional view taken along line AA 'in FIG. In FIG. 6, (a) is the initial state. Since the liquid crystal drive element of this embodiment is operated in the normally black mode, no voltage is applied to the liquid crystal 12 in the initial state, and the liquid crystal drive element is in the light-shielded state. Therefore, no light enters the photodiode of the image sensor.
【００１９】次に（ｂ）に示すように、液晶駆動素子の
上電極１４に信号を送り、液晶１２に電圧を印加して透
光状態とする。上電極１４に入射する光信号はカラーフ
ィルター１０、マイクロレンズ８を通って撮像素子のフ
ォトダイオードに入り、電気信号に変換され、電子電荷
として蓄積される。Next, as shown in (b), a signal is sent to the upper electrode 14 of the liquid crystal driving element, and a voltage is applied to the liquid crystal 12 to bring it into a translucent state. The optical signal incident on the upper electrode 14 passes through the color filter 10 and the microlens 8 and enters the photodiode of the image pickup device, is converted into an electric signal, and is accumulated as an electronic charge.
【００２０】次に、（ｃ）に示すように、液晶駆動素子
の上電極１４の信号を切り、遮光状態にすると同時にフ
ォトダイオードのｎ+ 半導体領域３に蓄積された電子電
荷を一方のＶＣＣＤに転送する。Next, as shown in (c), the signal of the upper electrode 14 of the liquid crystal driving element is cut off to set it in a light-shielded state, and at the same time, the electronic charge accumulated in the n + semiconductor region 3 of the photodiode is transferred to one VCCD. Forward.
【００２１】次に（ｄ）に示すように、ＶＣＣＤ４を駆
動し、画素信号を撮像素子の外部に出力すると同時に
（ｂ）とは異なる液晶駆動素子の上電極１４に信号を送
り、液晶１２に電圧を印加して透光状態とし、上電極１
４に入射した光信号をフォトダイオードに蓄積する。Next, as shown in (d), the VCCD 4 is driven to output a pixel signal to the outside of the image pickup device, and at the same time, a signal is sent to the upper electrode 14 of the liquid crystal drive element different from that shown in (b) to cause the liquid crystal 12 to flow. A voltage is applied to make it transparent, and the upper electrode 1
The optical signal incident on 4 is stored in the photodiode.
【００２２】次に（ｅ）に示すように上電極１４に送っ
た信号を切り、遮光状態にすると同時に、ｎ+ 半導体領
域３に蓄積された電子電荷を（ｃ）とは異なる他方のＶ
ＣＣＤに転送する。引き続き図５のＢ−Ｂ’行について
も同じ動作を繰り返し、画像信号を読み込む。Next, as shown in (e), the signal sent to the upper electrode 14 is cut off to set it in a light-shielding state, and at the same time, the electron charge accumulated in the n + semiconductor region 3 is changed to the other V voltage different from (c).
Transfer to CCD. Subsequently, the same operation is repeated for the line BB 'in FIG. 5 to read the image signal.
【００２３】本実施例においては、実施例１同様解像度
を向上すると同時に、ＶＣＣＤを２つ設けたことにより
画像信号の高速読み込みが可能となる。In this embodiment, the resolution is improved as in the first embodiment, and at the same time, the high speed reading of the image signal becomes possible by providing the two VCCDs.
【００２４】（実施例３）図７に本発明第３の実施例の
断面図を示す。また、図８に本実施例の１画素の構成の
平面図及び図９に図８のＡ−Ａ’行断面図を示す。(Embodiment 3) FIG. 7 shows a sectional view of a third embodiment of the present invention. Further, FIG. 8 shows a plan view of the configuration of one pixel of the present embodiment, and FIG. 9 shows a sectional view taken along the line AA ′ of FIG.
【００２５】本実施例の特徴は、撮像素子に増幅型のＢ
ＡＳＩＳを用いた点にあり、ｎ- 半導体基板１にバイポ
ーラトランジスタのベースであるｐ- 半導体領域２０、
エミッタ領域であるｎ+ 半導体領域２１、エミッタ２１
に接続され、画素信号を出力するための垂直読み出し線
２３から構成される。The feature of this embodiment is that the image pickup device has an amplification type B
The point is that ASIS is used, and the p - semiconductor region 20 which is the base of the bipolar transistor is formed on the n - semiconductor substrate 1.
N + semiconductor region 21, which is an emitter region, and emitter 21
And a vertical read line 23 for outputting a pixel signal.
【００２６】図９（ａ）は本実施例の初期状態である。
液晶駆動素子はノーマリーブラックモードで動作させ、
この状態では液晶１２に電圧を印加せず、遮光状態であ
り、撮像素子には光信号は入らない。次に（ｂ）に示す
ように液晶駆動素子の上電極１４に信号を送り、液晶１
２を透光状態にする。上電極１４に入射する光信号はカ
ラーフィルター１０、マイクロレンズ８を通って撮像素
子のベース２０に入り、電気信号に変換され、ホール電
荷として蓄積される。FIG. 9A shows the initial state of this embodiment.
The liquid crystal drive element is operated in normally black mode,
In this state, no voltage is applied to the liquid crystal 12 and the liquid crystal 12 is in a light-shielded state, and no optical signal enters the image sensor. Next, as shown in (b), a signal is sent to the upper electrode 14 of the liquid crystal drive element, and the liquid crystal 1
2 is made transparent. The optical signal incident on the upper electrode 14 passes through the color filter 10 and the microlens 8 to enter the base 20 of the image pickup device, is converted into an electric signal, and is accumulated as hole charges.
【００２７】次に、（ｃ）に示すように上電極１２に送
った信号を切り、遮光状態にすると同時に、撮像素子の
エミッタ２１を通して蓄積された画素信号を読み出す。
読み出しが終了した後、ベースの電荷をリセットして
（ａ）の初期状態に戻る。Next, as shown in (c), the signal sent to the upper electrode 12 is cut off to set it in a light shielding state, and at the same time, the pixel signal accumulated through the emitter 21 of the image pickup device is read out.
After the reading is completed, the electric charge of the base is reset to return to the initial state of (a).
【００２８】次に、（ｄ）に示すように、液晶駆動素子
の上電極１４に信号を送り、液晶１２を遮光状態にし、
上電極１４に入射した光信号をベース２０に蓄積する。
続いて（ｅ）に示すように、上電極１４の信号を切り、
遮光状態にすると同時にベース２０に蓄積された画素信
号をエミッタ２１を通して読み出す。読み出しが終了し
た後、ベース２０の電荷をリセットし、（ａ）の初期状
態に戻る。Next, as shown in (d), a signal is sent to the upper electrode 14 of the liquid crystal driving element to bring the liquid crystal 12 into a light-shielding state,
The optical signal incident on the upper electrode 14 is accumulated in the base 20.
Then, as shown in (e), the signal of the upper electrode 14 is cut off,
At the same time when the light is shielded, the pixel signal accumulated in the base 20 is read out through the emitter 21. After the reading is completed, the electric charge of the base 20 is reset and the state returns to the initial state of (a).
【００２９】以上の動作を引き続いてＢ−Ｂ’行につい
ても行ない、画像信号を読み込む。Following the above operation, the image signal is read in the line BB '.
【００３０】本実施例では増幅型の固体撮像素子を用い
たことによって、高感度・高精細な撮像装置が実現でき
る。In this embodiment, by using the amplification type solid-state image pickup device, a highly sensitive and high-definition image pickup device can be realized.
【００３１】[0031]
【発明の効果】以上説明したように、本願発明は、従来
の固体撮像装置に液晶駆動素子を組み合わせることによ
り、光電変換素子を増加することなく画素数を増やすこ
とができるため、解像度の高い固体撮像装置を製造歩留
を下げることなく提供できる。As described above, according to the present invention, the number of pixels can be increased without increasing the number of photoelectric conversion elements by combining the conventional solid-state image pickup device with the liquid crystal driving element, so that the solid-state image sensor with high resolution can be obtained. An imaging device can be provided without lowering the manufacturing yield.
【図１】本発明第１の実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the present invention.
【図２】本発明第１の実施例の１画素の構成の平面図で
ある。FIG. 2 is a plan view of the configuration of one pixel according to the first embodiment of the present invention.
【図３】図２に示した画素の断面図である。3 is a cross-sectional view of the pixel shown in FIG.
【図４】本発明第２の実施例の断面図である。FIG. 4 is a sectional view of a second embodiment of the present invention.
【図５】本発明第２の実施例の１画素の構成の平面図で
ある。FIG. 5 is a plan view of the configuration of one pixel according to the second embodiment of the present invention.
【図６】図５に示した画素の断面図である。6 is a cross-sectional view of the pixel shown in FIG.
【図７】本発明第３の実施例の断面図である。FIG. 7 is a sectional view of a third embodiment of the present invention.
【図８】本発明第３の実施例の１画素の構成の平面図で
ある。FIG. 8 is a plan view of the configuration of one pixel according to the third embodiment of the present invention.
【図９】図８に示した画素の断面図である。9 is a cross-sectional view of the pixel shown in FIG.
Claims (1)
電変換素子と、該光電変換素子の信号電荷を読み出す手
段と、各光電変換素子の直上に設けられたマイクロレン
ズと、各マイクロレンズの直上に設けられた複数のカラ
ーフィルターとを有する固体撮像装置であって、上記カ
ラーフィルターの各々に対応する液晶駆動素子を有する
液晶装置がオンチップで設けられていることを特徴とす
る固体撮像装置。1. A photoelectric conversion element arranged two-dimensionally on a semiconductor substrate, a means for reading out signal charges of the photoelectric conversion element, a microlens provided directly above each photoelectric conversion element, and each microlens. A solid-state imaging device having a plurality of color filters provided immediately above, wherein a liquid crystal device having a liquid crystal driving element corresponding to each of the color filters is provided on-chip. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5260430A JPH0799297A (en) | 1993-09-27 | 1993-09-27 | Solid-state image pick-up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5260430A JPH0799297A (en) | 1993-09-27 | 1993-09-27 | Solid-state image pick-up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0799297A true JPH0799297A (en) | 1995-04-11 |
Family
ID=17347828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5260430A Withdrawn JPH0799297A (en) | 1993-09-27 | 1993-09-27 | Solid-state image pick-up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0799297A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09130683A (en) * | 1995-11-06 | 1997-05-16 | Konica Corp | Optical element-integrated image pickup element and image pickup device |
| WO1999039372A2 (en) * | 1998-02-02 | 1999-08-05 | Uniax Corporation | Image sensors made from organic semiconductors |
| WO2001069651A3 (en) * | 2000-03-17 | 2002-08-08 | Symagery Microsystems Inc | Cmos imager frame capture |
| JP2010134454A (en) * | 2008-11-07 | 2010-06-17 | Semiconductor Energy Lab Co Ltd | Image input-output device |
| JP2011164608A (en) * | 2010-02-09 | 2011-08-25 | Sharp Corp | Display device with electrically switchable field of view for embedded light sensor |
| CN104298029B (en) * | 2014-10-24 | 2017-02-15 | 华中科技大学 | Infrared beam control chip based on electric control liquid crystal infrared divergence planar micro-cylindrical-lens |
| WO2024014356A1 (en) * | 2022-07-15 | 2024-01-18 | 株式会社ジャパンディスプレイ | Detection device |
| WO2024014353A1 (en) * | 2022-07-11 | 2024-01-18 | 株式会社ジャパンディスプレイ | Detection device |
-
1993
- 1993-09-27 JP JP5260430A patent/JPH0799297A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09130683A (en) * | 1995-11-06 | 1997-05-16 | Konica Corp | Optical element-integrated image pickup element and image pickup device |
| WO1999039372A2 (en) * | 1998-02-02 | 1999-08-05 | Uniax Corporation | Image sensors made from organic semiconductors |
| WO1999039372A3 (en) * | 1998-02-02 | 2000-03-02 | Uniax Corp | Image sensors made from organic semiconductors |
| US6300612B1 (en) | 1998-02-02 | 2001-10-09 | Uniax Corporation | Image sensors made from organic semiconductors |
| WO2001069651A3 (en) * | 2000-03-17 | 2002-08-08 | Symagery Microsystems Inc | Cmos imager frame capture |
| JP2010134454A (en) * | 2008-11-07 | 2010-06-17 | Semiconductor Energy Lab Co Ltd | Image input-output device |
| US8941617B2 (en) | 2008-11-07 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Image input-output device with color layer between photodetector and display elements to improve the accuracy of reading images in color |
| JP2011164608A (en) * | 2010-02-09 | 2011-08-25 | Sharp Corp | Display device with electrically switchable field of view for embedded light sensor |
| CN104298029B (en) * | 2014-10-24 | 2017-02-15 | 华中科技大学 | Infrared beam control chip based on electric control liquid crystal infrared divergence planar micro-cylindrical-lens |
| WO2024014353A1 (en) * | 2022-07-11 | 2024-01-18 | 株式会社ジャパンディスプレイ | Detection device |
| WO2024014356A1 (en) * | 2022-07-15 | 2024-01-18 | 株式会社ジャパンディスプレイ | Detection device |
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