JPH0787185B2 - Semiconductor heat treatment method - Google Patents
Semiconductor heat treatment methodInfo
- Publication number
- JPH0787185B2 JPH0787185B2 JP60002703A JP270385A JPH0787185B2 JP H0787185 B2 JPH0787185 B2 JP H0787185B2 JP 60002703 A JP60002703 A JP 60002703A JP 270385 A JP270385 A JP 270385A JP H0787185 B2 JPH0787185 B2 JP H0787185B2
- Authority
- JP
- Japan
- Prior art keywords
- boat
- semiconductor
- heat treatment
- cover
- heating furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims description 66
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 20
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 22
- 239000012535 impurity Substances 0.000 description 9
- 230000003749 cleanliness Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体の熱処理方法の改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to an improvement in a method for heat treatment of a semiconductor.
［従来の技術］ 従来から半導体の熱処理には横形熱処理装置が多く用い
られていたが、近時は第３図に示すような縦形熱処理装
置も用いられるようになってきた。図において、１はほ
ぼ垂直に配置されて上端側が閉じられ下端側が開口され
た筒状の炉体、２はこの炉体の内壁に配設されたヒー
タ、３はこのヒータの内側に間隙を隔てて配設された石
英管である。この石英管３は、上端側が閉じられ、下端
側が開口された構造になっている。４は炉体１の頂壁を
貫通して石英管３の上端側に連結されたガス導入管であ
る。以上により加熱炉Ｆが構成されている。５は図示し
ない駆動機構に連結される支持軸、６はこの支持軸の上
端部に水平に固着されたボート支持台、８はこのボート
支持台上に支持された石英からなるボート、Ｗはこのボ
ートに設けられた複数の棚板上に載置された被加熱体と
してのウエハ状半導体である。[Prior Art] Conventionally, a horizontal heat treatment apparatus has been often used for semiconductor heat treatment, but recently, a vertical heat treatment apparatus as shown in FIG. 3 has also been used. In the figure, 1 is a cylindrical furnace body which is arranged almost vertically and whose upper end side is closed and whose lower end side is open. 2 is a heater arranged on the inner wall of this furnace body. 3 is a space inside this heater. It is a quartz tube arranged. The quartz tube 3 has a structure in which the upper end side is closed and the lower end side is opened. Reference numeral 4 is a gas introduction pipe that penetrates the top wall of the furnace body 1 and is connected to the upper end side of the quartz pipe 3. The heating furnace F is configured as described above. 5 is a support shaft connected to a drive mechanism (not shown), 6 is a boat support horizontally fixed to the upper end of the support shaft, 8 is a boat made of quartz supported on the boat support, and W is It is a wafer-shaped semiconductor as an object to be heated placed on a plurality of shelf boards provided in a boat.
上記の縦形熱処理装置を用いた熱処理方法は、次の通り
である。始め支持軸５を駆動してボート支持台６を加熱
炉Ｆの下方に引き出した位置で、半導体Ｗをボート８に
載置してから、該ボート８をボート支持台６により支持
して加熱炉Ｆ内に徐々に搬入する。そして、半導体Ｗの
温度が所定の温度に達してから、ガス導入管４より反応
ガスを石英管３内に供給して半導体Ｗを熱処理する。所
要の熱処理が終れば、反応ガスの供給を中止してボート
８を徐々に加熱炉Ｆの外に出し、半導体Ｗの温度を降下
させてボード８から半導体Ｗを取り出す。The heat treatment method using the above vertical heat treatment apparatus is as follows. First, the semiconductor W is mounted on the boat 8 at a position where the support shaft 5 is driven and the boat support 6 is pulled out below the heating furnace F, and then the boat 8 is supported by the boat support 6 to support the heating furnace. Gradually carry it into F. Then, after the temperature of the semiconductor W reaches a predetermined temperature, the reaction gas is supplied from the gas introduction pipe 4 into the quartz pipe 3 to heat-treat the semiconductor W. When the required heat treatment is completed, the supply of the reaction gas is stopped, the boat 8 is gradually taken out of the heating furnace F, the temperature of the semiconductor W is lowered, and the semiconductor W is taken out from the board 8.
このような縦形熱処理装置を用いた熱処理方法によれ
ば、横形熱処理装置を用いた熱処理方法と違って、石英
管３の内壁をこすらずにボート８を該石英管３内に搬入
でき、従ってボート８の搬入時に該ボート８と石英管３
の摩擦接触により石英粉等の不純物が発生せず、石英管
３内をクリーンに保つことができ、横形熱処理装置を用
いた熱処理方法に比べて半導体製品の歩留を著しく向上
させることができる利点がある。According to the heat treatment method using the vertical heat treatment apparatus, unlike the heat treatment method using the horizontal heat treatment apparatus, the boat 8 can be carried into the quartz tube 3 without rubbing the inner wall of the quartz tube 3, and thus the boat 8 can be carried in the boat. When carrying in the boat 8, the quartz tube 3 and the boat 8
The frictional contact does not generate impurities such as quartz powder, the inside of the quartz tube 3 can be kept clean, and the yield of semiconductor products can be significantly improved as compared with a heat treatment method using a horizontal heat treatment apparatus. There is.
［発明が解決しようとする問題点］ しかしながら、このような縦形熱処理装置を用いた熱処
理方法においても、半導体Ｗが炉外でボート８に載置さ
れてから炉内に搬入されて反応ガスの供給を受けるまで
の間、及び炉内での熱処理が終り反応ガスが止められて
ボート８が炉外に搬出され、半導体Ｗが取り出されるま
での間は、いずれも半導体Ｗは大気に触れることにな
る。この結果、大気中に含まれる不純物の付着により半
導体Ｗが汚染されるという問題点があった。[Problems to be Solved by the Invention] However, also in the heat treatment method using such a vertical heat treatment apparatus, the semiconductor W is loaded on the boat 8 outside the furnace and then loaded into the furnace to supply the reaction gas. The semiconductor W is in contact with the atmosphere until the semiconductor W is taken out and before the heat treatment in the furnace is completed and the reaction gas is stopped and the boat 8 is carried out of the furnace. . As a result, there is a problem that the semiconductor W is contaminated by the adhesion of impurities contained in the atmosphere.
また、ボートを被い体により被って加熱炉内に出し入れ
ることも提案されているが、この方法でも被い体の開口
部は開口されたままなので、この開口部から不純物が被
い体内に入り、半導体が汚染され、製品の歩留りが低下
してしまう問題点があった。It has also been proposed to cover the boat with the cover and put it in and out of the heating furnace, but even with this method, the opening of the cover remains open, so impurities will enter the cover through this opening. However, there is a problem in that the semiconductors are contaminated and the semiconductor is contaminated, and the product yield is reduced.
特に、トランジスタやダイオードと違ってLSI等の製造
には高いクリーン度が要求されるので、クリーン度が高
く且つ量産に適した熱処理技術の開発が望まれている。In particular, unlike transistors and diodes, high cleanliness is required for manufacturing LSIs and the like, so development of a heat treatment technique that is highly clean and suitable for mass production is desired.
［問題点を解決するための手段］ 上記の問題点を解決するための本発明の手段を説明する
と、本発明に係る半導体の熱処理方法は、半導体Ｗを載
置したボート８を加熱炉Ｆ内に挿入して該半導体を熱処
理する半導体の熱処理方法において、 前記ボート８を石英からなる被い体９と該被い体９の開
口部を閉じる蓋体７とにより被って前記加熱炉Ｆ内に搬
入し、 前記半導体Ｗの熱処理時には前記蓋体７で閉じられた前
記被い体９の内側に反応ガスを供給し、 熱処理後に前記ボート８を前記被い体９と前記蓋体７と
で被ったままの状態で前記加熱炉Ｆから搬出することを
特徴とする。[Means for Solving the Problems] Means for solving the above problems will be described. In the semiconductor heat treatment method according to the present invention, a boat 8 on which a semiconductor W is mounted is placed in a heating furnace F. In the method for heat treating a semiconductor, the boat 8 is covered with a cover 9 made of quartz and a lid 7 for closing an opening of the cover 9 in the heating furnace F. When the semiconductor W is carried in and heat-treated, the reaction gas is supplied to the inside of the cover 9 closed by the cover 7, and after the heat treatment, the boat 8 is covered with the cover 9 and the cover 7. It is characterized in that it is carried out from the heating furnace F as it is.
［発明の作用］ このような熱処理方法をとると、加熱炉Ｆの外で半導体
Ｗをボート８に載置してから加熱炉Ｆ内に搬入するまで
の間、及び加熱炉Ｆ内での熱処理の間、及び熱処理終了
後にボート８を加熱炉Ｆの外に搬出して降温させて半導
体Ｗを取り出すまでの間のいずれにおいても、半導体Ｗ
を被い体９とその開口部を閉じる蓋体７とで被っている
ので、外部から不純物が入らなくなり、ボート８の周囲
をクリーンな状態に保持する。これにより、半導体Ｗが
大気中の不純物により汚染されるのを可及的に防止し、
半導体Ｗの歩留りを従来に比べて著しく向上させること
ができる。[Advantageous Effects of the Invention] When such a heat treatment method is adopted, the heat treatment in the heating furnace F from the time when the semiconductor W is placed on the boat 8 to the time when the semiconductor W is loaded into the heating furnace F, and the heat treatment in the heating furnace F. The semiconductor W is carried out both during the heat treatment and before the boat 8 is carried out of the heating furnace F to lower the temperature and take out the semiconductor W after the heat treatment.
Since the cover 9 is covered by the cover 7 and the lid 7 that closes the opening, impurities are prevented from entering from the outside, and the periphery of the boat 8 is maintained in a clean state. This prevents the semiconductor W from being contaminated by impurities in the atmosphere as much as possible,
The yield of the semiconductor W can be remarkably improved as compared with the conventional one.
［実施例］ 以下、本発明の実施例を図面を参照して説明する。な
お、前述した第３図の装置と同一部分には同符号を付け
て示している。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. The same parts as those in the apparatus shown in FIG. 3 are designated by the same reference numerals.
第１図は、本発明に係る半導体熱処理方法を実施する縦
形熱処理装置の一実施例を示したものである。図におい
て、９は石英管３よりも小径で上端側が閉じられ下端側
が開口された形状をしていて、ボート支持台６上のボー
ト８に被されてこれを被う石英筒からなる被い体、７は
支持軸５に中央部を貫通させて該支持軸５の所定位置に
水平状態で相対的に回転自在で取付けられて被い体９の
開口部を閉じる蓋体である。10は被い体９の下端部に設
けた保持部材9aに連結された被い体支持アーム、11はこ
のアーム10に連結された被い体駆動機構である。12は蓋
体７の上面周辺に配置された環状体7aの一部に設けられ
たガス供給口、13はこのガス供給口12に連通して被い体
９内に立設され、開口先端がボート８の頂部上方に位置
するガス供給管、14は前記環状体7aの一部に前記ガス供
給口12と対応させて設けられたガス排出口である。次
に、このような縦形熱処理装置を用いた半導体の熱処理
方法について、該第１図及び第２図（Ａ）〜（Ｃ）を参
照して説明する。第２図（Ａ）に示すように、始め支持
軸５を下降させてボート支持台６に加熱炉Ｆの下方に引
き出した位置で、被い体駆動機構11によりアーム10を駆
動して被い体９を該第２図（Ａ）に示す位置に引き上げ
る。そして、半導体Ｗをボート８に載置し、該ボート８
をボート支持台６に支持させてから、アーム10を駆動し
て第２図（Ｂ）に示したように被い体９を下げて蓋体７
の上に乗せ、該被い体９によりボート８を被い、該被い
体９の下端の開口部は該蓋体７で閉じた状態にする。こ
の状態では、外部から被い体９内に不純物が入らなくな
り、ボート８の周囲をクリーンな状態に保持できる。そ
の後、該蓋体７でその開口部が閉じられた被い体９の内
側にガス供給口12より清浄ガスを供給し、ガス排出口14
より該ガスを排出する。これにより、半導体Ｗは完全に
大気から遮断されて、大気中の不純物により汚染される
ことのない状態となる。この後、支持軸５を上昇させ
て、第２図（Ｃ）に示したようにボート８を被い体９と
蓋体７とで被った状態で加熱炉Ｆの石英管３内に搬入
し、該ボート８を被い体９と蓋体７とで被ったままの状
態で、ヒータ２の加熱により半導体Ｗの温度を所定の温
度に上昇させる。次いで、前記の清浄ガスに換えて、ガ
ス供給口12から被い体９の内側に反応ガスを供給し、ガ
ス排出口14から該ガスを排出しながら熱処理を行う。FIG. 1 shows an embodiment of a vertical heat treatment apparatus for carrying out a semiconductor heat treatment method according to the present invention. In the figure, reference numeral 9 has a smaller diameter than the quartz tube 3 and has a shape in which the upper end side is closed and the lower end side is opened, and the covering body is made of a quartz tube which is covered with and covers the boat 8 on the boat support 6. Reference numerals 7 and 7 denote lids which penetrate the central portion of the support shaft 5 and are rotatably attached to a predetermined position of the support shaft 5 in a horizontal state to relatively close the opening of the cover 9. Reference numeral 10 is a cover supporting arm connected to a holding member 9a provided at the lower end of the cover 9, and 11 is a cover driving mechanism connected to the arm 10. Reference numeral 12 denotes a gas supply port provided in a part of an annular body 7a arranged around the upper surface of the lid 7, and 13 communicates with the gas supply port 12 to stand upright in the cover 9, and the opening tip is A gas supply pipe 14 located above the top of the boat 8 is a gas discharge port provided in a part of the annular body 7a so as to correspond to the gas supply port 12. Next, a semiconductor heat treatment method using such a vertical heat treatment apparatus will be described with reference to FIGS. 1 and 2 (A) to (C). As shown in FIG. 2 (A), the arm 10 is driven by the cover driving mechanism 11 at the position where the support shaft 5 is first lowered and the boat support 6 is pulled out below the heating furnace F. The body 9 is pulled up to the position shown in FIG. 2 (A). Then, the semiconductor W is placed on the boat 8 and the boat 8
After supporting the boat on the boat support 6, the arm 10 is driven to lower the cover 9 and lower the cover 7 as shown in FIG. 2 (B).
The boat 8 is covered with the cover 9, and the opening at the lower end of the cover 9 is closed by the lid 7. In this state, impurities do not enter the cover body 9 from the outside, and the periphery of the boat 8 can be maintained in a clean state. After that, clean gas is supplied from the gas supply port 12 to the inside of the cover 9 whose opening is closed by the lid 7, and the gas exhaust port 14
The gas is discharged more. As a result, the semiconductor W is completely shielded from the atmosphere and is not contaminated by impurities in the atmosphere. After that, the support shaft 5 is lifted up and carried into the quartz tube 3 of the heating furnace F with the boat 8 covered with the cover body 9 and the cover body 7 as shown in FIG. 2 (C). The temperature of the semiconductor W is raised to a predetermined temperature by heating the heater 2 while the boat 8 is covered with the cover body 9 and the lid body 7. Next, in place of the clean gas, a reaction gas is supplied from the gas supply port 12 to the inside of the cover 9, and heat treatment is performed while discharging the gas from the gas discharge port 14.
所要の熱処理が終れば、上記の反応ガスの供給を清浄ガ
スの供給に切換えて、被い体９の内側に清浄ガスの給排
を行いながら支持軸５を下降させてボート８を被い体９
と蓋体７とで被ったままの状態で炉外に搬出する。そし
て、半導体Ｗの温度が低下してから、上記の清浄ガスの
供給を止めて被い体９を引き上げ、ボート８から半導体
Ｗを取り出す。これにより、半導体Ｗは炉内での熱処理
の終了後、炉外に出されて降温されボート８から取り出
されるまでの間も、被い体９と蓋体７とで被われている
ので、外部から被い体９内に不純物が入らなくなり、ボ
ート８の周囲をクリーンな状態に保持できる。更に、こ
の間の被い体９間に本実施例のように洗浄ガスを送り込
むと、該洗浄ガスにより被い体９内が大気から遮断され
て、大気中の不純物により半導体Ｗが汚染されるのを一
層確実に防止できる。When the required heat treatment is completed, the supply of the above reaction gas is switched to the supply of the clean gas, and the support shaft 5 is lowered while supplying and discharging the clean gas to and from the cover 9, and the boat 8 is covered. 9
It is carried out of the furnace as it is covered with the lid 7. Then, after the temperature of the semiconductor W decreases, the supply of the clean gas is stopped, the cover 9 is pulled up, and the semiconductor W is taken out from the boat 8. As a result, the semiconductor W is covered with the cover body 9 and the cover body 7 after the heat treatment in the furnace is finished and before the semiconductor W is taken out of the furnace, cooled, and taken out from the boat 8. Therefore, impurities are prevented from entering the cover body 9, and the periphery of the boat 8 can be maintained in a clean state. Further, when a cleaning gas is fed into the cover 9 during this period as in the present embodiment, the inside of the cover 9 is shielded from the atmosphere by the cleaning gas, and the semiconductor W is contaminated by impurities in the atmosphere. Can be prevented more reliably.
上記実施例では、本発明を縦形熱処理装置で実施した場
合についても説明したが、本発明はこれに限定されるも
のではなく、横形熱処理装置でも同様にして実施するこ
とができる。In the above embodiment, the case where the present invention is carried out in the vertical heat treatment apparatus has been described, but the present invention is not limited to this, and can be carried out in the same manner in the horizontal heat treatment apparatus.
［発明の効果］ 以上説明したように本発明に係る半導体の熱処理方法
は、半導体を載置したボートを被い体とその開口部を閉
じる蓋体とにより被った状態で加熱炉内に搬入し、前記
半導体の熱処理時には前記蓋体で閉じられた前記被い体
の内側に反応ガスを供給し、熱処理後に前記ボートを前
記被い体と前記蓋体とで被ったままの状態で前記加熱炉
から搬出するので、半導体を載置したボートを加熱炉内
に搬入するまでの間、加熱炉内での熱処理の間、及び熱
処理終了後にボートを加熱炉の外に搬出して降温させて
半導体を取り出すまでの間にいずれにおいても、ボート
の周囲をクリーンな状態に保持でき、LSI等の半導体で
もその歩留りを従来に比べて著しく向上させることがで
きる。また、このような被い体とその蓋体とを用いて、
ボートの周囲を閉じると、クリーンルームのクリーン度
がやや低くても、クリーンルームのクリーン度が高いも
のと同等の半導体の歩留りを得られる利点がある。更
に、クリーンルームのクリーン度が高い場合には、より
一層の高いクリーン度を被い体内に得られて、半導体の
より一層の品質向上が図れ、且つ歩留りのより一層の向
上が図れ、しかも極めて高いクリーン度が要求される例
えば液晶ディスプレー半導体等の熱処理にも適用できる
利点がある。[Effects of the Invention] As described above, in the semiconductor heat treatment method according to the present invention, the semiconductor mounted boat is carried into the heating furnace while being covered with the cover and the lid closing the opening. When the semiconductor is heat-treated, a reaction gas is supplied to the inside of the cover closed with the lid, and after the heat treatment, the boat is covered with the cover and the lid. Since the boat is loaded with the semiconductor, the boat on which the semiconductor is mounted is loaded into the heating furnace, during the heat treatment in the heating furnace, and after the heat treatment is finished, the boat is carried out of the heating furnace to lower the temperature to remove the semiconductor. In any case before taking out, the periphery of the boat can be kept in a clean state, and the yield of semiconductors such as LSI can be significantly improved as compared with the conventional one. In addition, by using such a cover and its lid,
Closing the periphery of the boat has the advantage that, even if the cleanliness of the clean room is slightly low, the yield of semiconductors can be as high as that of cleanliness of the clean room. Furthermore, when the cleanliness of the clean room is high, a higher cleanliness can be obtained inside the body, and the quality of the semiconductor can be further improved, and the yield can be further improved, and is extremely high. It has an advantage that it can be applied to heat treatment of, for example, liquid crystal display semiconductors, which requires cleanliness.
第１図は本発明の方法を実施する縦形熱処理装置の一実
施例を示す縦断面図、第２図（Ａ）〜（Ｃ）は本発明の
熱処理方法におけるボート及び被い体の駆動要領を示す
説明図、第３図は従来の縦形半導体熱処理炉の概要を示
す縦断面図である。 １……炉体、２……ヒータ、Ｆ……加熱炉、Ｗ……半導
体、６……ボート支持台、７……蓋体、８……ボート、
９……石英からなる被い体、11……被い体駆動機構、12
……ガス供給口、14……ガス排出口。FIG. 1 is a longitudinal sectional view showing an embodiment of a vertical heat treatment apparatus for carrying out the method of the present invention, and FIGS. 2 (A) to (C) show driving procedures of a boat and a cover in the heat treatment method of the present invention. FIG. 3 is a vertical sectional view showing an outline of a conventional vertical semiconductor heat treatment furnace. 1 ... Furnace body, 2 ... Heater, F ... Heating furnace, W ... Semiconductor, 6 ... Boat support, 7 ... Lid, 8 ... Boat,
9 ... Quartz cover, 11 ... Cover drive mechanism, 12
…… Gas supply port, 14 …… Gas outlet port.
Claims (1)
して該半導体を熱処理する半導体の熱処理方法におい
て、 前記ボートを石英からなる被い体と該被い体の開口部を
閉じる蓋体とにより被って前記加熱炉内に搬入し、 前記半導体の熱処理時には前記蓋体で閉じられた前記被
い体の内側に反応ガスを供給し、 熱処理後に前記ボートを前記被い体と前記蓋体とで被っ
たままの状態で前記加熱炉から搬出することを特徴とす
る半導体の熱処理方法。1. A method of heat treating a semiconductor in which a boat on which a semiconductor is mounted is carried into a heating furnace to heat-treat the semiconductor, wherein the boat is made of quartz and a lid for closing an opening of the lid. When the semiconductor is heat-treated, the reaction gas is supplied to the inside of the cover closed by the lid, and the boat is covered with the cover after the heat treatment. A method for heat treatment of a semiconductor, which is carried out from the heating furnace in a state of being covered with a body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60002703A JPH0787185B2 (en) | 1985-01-11 | 1985-01-11 | Semiconductor heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60002703A JPH0787185B2 (en) | 1985-01-11 | 1985-01-11 | Semiconductor heat treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61161711A JPS61161711A (en) | 1986-07-22 |
| JPH0787185B2 true JPH0787185B2 (en) | 1995-09-20 |
Family
ID=11536646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60002703A Expired - Fee Related JPH0787185B2 (en) | 1985-01-11 | 1985-01-11 | Semiconductor heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0787185B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127122U (en) * | 1986-11-27 | 1988-08-19 | ||
| JP2615081B2 (en) * | 1987-10-20 | 1997-05-28 | 東京エレクトロン株式会社 | Vertical heat treatment furnace |
| US5471033A (en) * | 1994-04-15 | 1995-11-28 | International Business Machines Corporation | Process and apparatus for contamination-free processing of semiconductor parts |
| JP3131601B2 (en) * | 1995-03-02 | 2001-02-05 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5496359A (en) * | 1977-12-28 | 1979-07-30 | Nec Home Electronics Ltd | Heat treatment method for semiconductor device |
| JPS567436A (en) * | 1979-06-29 | 1981-01-26 | Sony Corp | High pressure treating device |
| JPS5739527A (en) * | 1980-08-21 | 1982-03-04 | Seiko Epson Corp | Reaction tube |
| JPS57202727A (en) * | 1981-06-09 | 1982-12-11 | Matsushita Electric Ind Co Ltd | Method and device for heat treatment |
-
1985
- 1985-01-11 JP JP60002703A patent/JPH0787185B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61161711A (en) | 1986-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3190165B2 (en) | Vertical heat treatment apparatus and heat treatment method | |
| JP3230836B2 (en) | Heat treatment equipment | |
| US5167716A (en) | Method and apparatus for batch processing a semiconductor wafer | |
| KR20150128596A (en) | Substrate processing apparatus, deposit removing method of substrate processing apparatus and recording medium | |
| JPH02138728A (en) | Heat treatment process and apparatus therefor | |
| US4695706A (en) | Vertical furnace for heat-treating semiconductor | |
| JPH0787185B2 (en) | Semiconductor heat treatment method | |
| JPS62260791A (en) | Device for pulling up silicon single crystal | |
| JP4468555B2 (en) | Heat treatment apparatus and heat treatment method | |
| JP2002305189A (en) | Vertical heat treatment apparatus and method for forcible air cooling | |
| JPH0539624Y2 (en) | ||
| JPH04157162A (en) | Surface treating device | |
| JPS61156730A (en) | Vertical thermal treatment apparatus for semiconductor article | |
| JPH0613325A (en) | Heat treating apparatus and cleaning method for treating vessel | |
| JPS5875840A (en) | Heating furnace for semiconductor | |
| JP3348150B2 (en) | Substrate processing equipment | |
| JP2003045808A (en) | Apparatus and method of vertical heat treatment | |
| JPS6254443A (en) | Process and device for drying wafers | |
| JPH07335601A (en) | Substrate treatment device | |
| JP3138291B2 (en) | Heat treatment method for semiconductor wafer | |
| JP2845580B2 (en) | Heat treatment equipment | |
| JP2756777B2 (en) | Substrate processing equipment | |
| JP2701847B2 (en) | Heat treatment method for semiconductor wafer | |
| GB2139744A (en) | Apparatus for firing semiconductor elements | |
| JPS63178519A (en) | Heat treatment equipment for semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |