JPH0786179A - Plasma processing system - Google Patents
Plasma processing systemInfo
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- JPH0786179A JPH0786179A JP5225695A JP22569593A JPH0786179A JP H0786179 A JPH0786179 A JP H0786179A JP 5225695 A JP5225695 A JP 5225695A JP 22569593 A JP22569593 A JP 22569593A JP H0786179 A JPH0786179 A JP H0786179A
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- plasma
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- sample
- processing apparatus
- plasma processing
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はアンテナから発生させた
高周波電力と磁気コイルから発生させた磁場とによる電
子サイクロトロン共鳴現象を利用したマイクロ波プラズ
マ処理装置に係り、特に、大面積を均一に処理するのに
好適なプラズマ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave plasma processing apparatus utilizing an electron cyclotron resonance phenomenon by a high frequency power generated from an antenna and a magnetic field generated from a magnetic coil, and more particularly, it uniformly processes a large area. The present invention relates to a plasma processing apparatus suitable for performing.
【０００２】[0002]
【従来の技術】半導体製造において、プラズマＣＶＤ法
やエッチングによるシリコンウェハの処理が盛んに行な
われている。また、ウェハの大面積化に伴い大面積ウェ
ハ表面を均一に処理する技術の開発が望まれている。2. Description of the Related Art In the manufacture of semiconductors, the processing of silicon wafers by the plasma CVD method and etching has been actively carried out. Further, with the increase in the area of the wafer, it is desired to develop a technique for uniformly treating the surface of the large area wafer.
【０００３】電子サイクロトロン共鳴を用いたプラズマ
処理装置では、真空容器内で高周波電磁波を発生させ、
この電磁波の電界成分に対し垂直方向成分を有する磁場
を磁気コイルで発生させ、真空容器内に電子サイクロト
ロン共鳴現象を起こす領域を形成する。この領域にガス
を導入してプラズマを発生させると、このプラズマは磁
場に沿って移動するが、ウェハと鎖交する磁束に沿った
プラズマがウェハ方向へと運ばれると、ウェハのプラズ
マ処理が行なわれる。In a plasma processing apparatus using electron cyclotron resonance, high frequency electromagnetic waves are generated in a vacuum container,
A magnetic field having a component perpendicular to the electric field component of this electromagnetic wave is generated by the magnetic coil to form a region in the vacuum container in which the electron cyclotron resonance phenomenon occurs. When gas is introduced into this region to generate plasma, the plasma moves along the magnetic field, but when the plasma along the magnetic flux interlinking with the wafer is carried toward the wafer, the plasma processing of the wafer is performed. Be done.
【０００４】例えば特開平４−４８０７８号公報記載の
従来技術では、真空容器内のウェハ上方に設置した１つ
のアンテナを４つに分岐させ、大面積のプラズマ処理を
行えるようにしている。しかし、この従来技術では、高
々直径１５cm程度のウェハを処理できるにすぎない。そ
れは、ウェハ半径方向に均一なプラズマを発生させるに
はこの従来技術では限界があるためである。For example, in the prior art disclosed in Japanese Patent Laid-Open No. 4-48078, one antenna installed above the wafer in the vacuum container is branched into four to enable large-area plasma processing. However, this conventional technique can only process a wafer having a diameter of about 15 cm at most. This is because this conventional technique has a limit in generating uniform plasma in the radial direction of the wafer.
【０００５】近年では、コンピュータのディスプレイ装
置として液晶パネルを用いるものが増えており、この液
晶パネルの基板をプラズマ処理できる装置の開発が急が
れている。現在のディスプレイ装置の主流は１４インチ
のＣＲＴであり、１７インチ，２０インチへの大型化の
要望も高い。このＣＲＴを用いたディスプレイ装置に対
抗する大きさの液晶パネルを製造するには、その大きさ
のウェハをプラズマ処理できる装置を開発する必要があ
る。In recent years, a liquid crystal panel has been increasingly used as a display device for a computer, and development of a device capable of plasma-treating a substrate of the liquid crystal panel has been rushed. The current mainstream display device is a 14-inch CRT, and there is a strong demand for increasing the size to 17 inches and 20 inches. In order to manufacture a liquid crystal panel of a size that opposes the display device using this CRT, it is necessary to develop a device capable of plasma processing a wafer of that size.
【０００６】そこで、図５に示すように、ウェハに近づ
くほど径が拡大される導波管を用いてプラズマ生成部へ
電磁波を導入する手法が採用されることになる。しか
し、この従来技術による電磁波の電界分布は、中心部で
強く周辺部で弱くなるため、プラズマ密度分布も同様に
中心部で密，周辺部で疎な分布になる。この様な不均一
なプラズマが生成されると、そのままの密度分布でプラ
ズマがウェハへと運ばれ、ウェハ表面の処理が不均一な
ってしまう。例えば、ＣＶＤ法により、ウェハ表面に薄
膜を形成させると、ウェハ中心部の膜厚が厚くなり、外
縁部で膜厚が薄いといった現象が起きてしまう。Therefore, as shown in FIG. 5, a method is adopted in which an electromagnetic wave is introduced into the plasma generating section by using a waveguide whose diameter increases toward the wafer. However, since the electric field distribution of electromagnetic waves according to this conventional technique is strong in the central portion and weak in the peripheral portion, the plasma density distribution is also dense in the central portion and sparse in the peripheral portion. When such non-uniform plasma is generated, the plasma is carried to the wafer with the density distribution as it is, and the treatment of the wafer surface becomes non-uniform. For example, when a thin film is formed on the surface of a wafer by the CVD method, the film thickness at the central portion of the wafer becomes thicker and the film thickness at the outer edge portion becomes thinner.
【０００７】このような技術課題を解決する従来技術と
して、特開平４−５５３８２号公報記載のものがある。
この従来技術では、導波管内部に金属板を挿入してプラ
ズマ生成部に入射する電磁波エネルギーを均一にし、ウ
ェハを均一に処理するようにしている。As a conventional technique for solving such a technical problem, there is one disclosed in Japanese Patent Laid-Open No. 4-55382.
In this conventional technique, a metal plate is inserted inside the waveguide so that the electromagnetic wave energy incident on the plasma generating unit is made uniform and the wafer is uniformly processed.
【０００８】[0008]
【発明が解決しようとする課題】上述した特開平４−５
５３８２号公報記載の従来技術によれば、それ以前の従
来技術では処理できなかった大面積の均一処理が可能に
なる。しかし、導波管をテーパ状に広げる必要があるた
め、導波管の高さが高くなり、装置全体が大型化してし
まうという問題がある。導波管の高さは、処理対象とす
るウエハの面積が大きくなるほど高くする必要があり、
将来処理対象とするウェハの大きさを考えると、この従
来技術を適用するには限界がある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
According to the conventional technique described in Japanese Patent No. 5382, it is possible to perform a uniform treatment on a large area, which could not be performed by the prior art. However, since it is necessary to expand the waveguide in a tapered shape, the height of the waveguide becomes high, which causes a problem that the entire device becomes large. The height of the waveguide needs to be increased as the area of the wafer to be processed increases.
Considering the size of the wafer to be processed in the future, there is a limit in applying this conventional technique.
【０００９】本発明の目的は、電磁波導波路部の装置容
積を小さくし、大面積ウェハの均一なプラズマ処理を実
現するプラズマ処理装置を提供することにある。An object of the present invention is to provide a plasma processing apparatus which realizes uniform plasma processing of a large area wafer by reducing the apparatus volume of the electromagnetic wave waveguide section.
【００１０】[0010]
【課題を解決するための手段】上記目的は、真空室内に
設置されたプラズマ処理対象の試料に対向する位置にア
ンテナを設置し、該アンテナから電磁波を放射させると
共に磁気コイルから磁場を印加して試料前面に電子サイ
クロトロン共鳴条件を満たす領域を発生させ、反応ガス
を真空室内に導入して前記領域にプラズマを発生させ試
料をプラズマ処理するプラズマ処理装置において、前記
アンテナとして夫々別の高周波電源から電力が供給され
る複数のアンテナを設けると共に、前記プラズマの発光
状態を検出する光検出手段と、該光検出手段の検出信号
から前記プラズマの発光分布を求め該発光分布を均一分
布とする各アンテナ供給電力を算出し算出した値により
前記各高周波電源を制御する電源制御手段とを設けるこ
とで、達成される。The above object is to install an antenna at a position facing a sample to be plasma-processed in a vacuum chamber, to radiate an electromagnetic wave from the antenna and to apply a magnetic field from a magnetic coil. In a plasma processing apparatus that generates a region satisfying an electron cyclotron resonance condition on the front surface of a sample, introduces a reaction gas into a vacuum chamber to generate plasma in the region, and plasma-processes the sample, power is supplied from separate high-frequency power sources as the antennas. Is provided with a plurality of antennas, and light detecting means for detecting the light emission state of the plasma, and each antenna supply for obtaining the light emission distribution of the plasma from the detection signal of the light detecting means to make the light emission distribution uniform Achieved by providing power supply control means for calculating the power and controlling each of the high frequency power supplies according to the calculated value.
【００１１】上記目的はまた、アンテナとして同一高周
波電源から電力が供給される複数のアンテナを設けると
共に、各アンテナから放射される電磁波によりプラズマ
の密度分布が均一となるように前記高周波電源と各アン
テナとを接続するケーブルの長さを調整しておくこと
で、達成される。The above object is also to provide a plurality of antennas to which electric power is supplied from the same high frequency power source, and to provide a uniform density distribution of plasma by the electromagnetic waves emitted from each antenna. This is achieved by adjusting the length of the cable connecting between and.
【００１２】[0012]
【作用】複数のアンテナから放射される電磁波により、
電子サイクロトロン共鳴領域にプラズマが発生する。プ
ラズマの発光強度分布を光検出手段の検出信号により得
て、プラズマ密度を推定する。プラズマ密度に粗密があ
る場合、プラズマが疎の領域の近傍にあるアンテナの給
電電力を大きくし、密の領域の近傍にあるアンテナの給
電電力を小さくするように制御する。この時、給電電力
の総和が変化しないように、各アンテナへの給電電圧を
制御するのが好ましい。生成プラズマの密度分布の粗密
が規定値以内になったときには、各アンテナへの給電電
力を一定に保ち、プラズマ密度を一定する。[Operation] By the electromagnetic waves emitted from the plurality of antennas,
Plasma is generated in the electron cyclotron resonance region. The light emission intensity distribution of the plasma is obtained from the detection signal of the light detection means to estimate the plasma density. When the plasma density is coarse and dense, control is performed so that the power supplied to the antenna near the area where the plasma is sparse is increased and the power supplied to the antenna near the area where the plasma is dense is decreased. At this time, it is preferable to control the power supply voltage to each antenna so that the total power supply does not change. When the density distribution of the generated plasma is within the specified value, the power supplied to each antenna is kept constant and the plasma density is kept constant.
【００１３】また、各アンテナから放射される電磁波の
位相は、各アンテナと電源とを接続するケーブルの長さ
に依存するため、各ケーブルの長さを調整しておくこと
で、プラズマ密度の均一性を図ることが可能となる。Further, since the phase of the electromagnetic wave radiated from each antenna depends on the length of the cable connecting each antenna and the power source, the length of each cable is adjusted to make the plasma density uniform. It is possible to improve the sex.
【００１４】[0014]
【実施例】以下、本発明の一実施例を図面を参照して説
明する。図１は本発明の一実施例に係るプラズマ処理装
置の構成図であ、図３は、このプラズマ処理装置の機能
構成図である。本実施例に係るプラズマ処理装置は、真
空容器７を備える。真空容器７の上部には真空窓１１が
設けられ、この上にアンテナ室２０が連設されている。
アンテナ室２０の外周には電磁コイル６ａが設けられ、
真空容器７の下部外周にも電磁コイル６ｂが設けられて
いる。真空容器７内には、基板ホルダ９が設けられてお
り、この基板ホルダ９の上に処理対象物であるウェハ８
が載せられる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 is a block diagram of a plasma processing apparatus according to an embodiment of the present invention, and FIG. 3 is a functional block diagram of the plasma processing apparatus. The plasma processing apparatus according to this embodiment includes a vacuum container 7. A vacuum window 11 is provided on the upper portion of the vacuum container 7, and an antenna chamber 20 is continuously provided on the vacuum window 11.
An electromagnetic coil 6a is provided on the outer periphery of the antenna chamber 20,
An electromagnetic coil 6b is also provided on the outer periphery of the lower portion of the vacuum container 7. A substrate holder 9 is provided in the vacuum container 7, and a wafer 8 to be processed is placed on the substrate holder 9.
Will be posted.
【００１５】アンテナ室２０には、複数のアンテナ（図
示したの３つ）１ａ，１ｂ，１ｃが設置され、各アンテ
ナ１ａ，１ｂ，１ｃは、夫々ケーブル１４ａ，１４ｂ，
１４ｃにより高周波電源３ａ，３ｂ，３ｃに接続されて
いる。アンテナ室２０の上壁には複数（図示の例では４
つ）の光センサ２ａ，２ｂ，２ｃ，２ｄが設置されてい
る。In the antenna chamber 20, a plurality of antennas (three shown in the figure) 1a, 1b, 1c are installed, and each antenna 1a, 1b, 1c has a cable 14a, 14b, respectively.
It is connected to the high frequency power supplies 3a, 3b and 3c by 14c. A plurality of antennas are provided on the upper wall of the antenna chamber 20.
Optical sensors 2a, 2b, 2c, 2d are installed.
【００１６】本実施例に係るプラズマ処理装置は、更
に、電源制御用演算器４を備える。この電源制御用演算
器４は、出力装置であるＣＲＴ表示装置１８と入力装置
であるキーボード１５が接続され、上記の光センサ２ａ
〜２ｄの検出信号を取り込んで詳細は後述する演算処理
を行い、演算結果に基づいて各高周波電源３ａ〜３ｄを
制御し、真空容器７内に生成されるプラズマの密度を均
一にする。The plasma processing apparatus according to this embodiment further includes a power source control computing unit 4. The power control arithmetic unit 4 is connected to a CRT display device 18 which is an output device and a keyboard 15 which is an input device, and is connected to the optical sensor 2a.
The detection signals of .about.2d are fetched and the calculation processing described later in detail is performed, and the respective high frequency power supplies 3a to 3d are controlled based on the calculation result to make the density of the plasma generated in the vacuum container 7 uniform.
【００１７】電源制御用演算器４の制御信号により、各
アンテナ１ａ，１ｂ，１ｃは夫々の給電電力に応じた電
磁波を放射し、この電磁波は真空窓１１を通して真空容
器７に入る。一方、アンテナ１ａ〜１ｃからの電磁波放
射と同時に、電磁コイル６ａ，６ｂにより磁場が発生さ
れ、真空容器７に電子サイクロトロン共鳴条件を満たす
領域が形成される。そして、この領域に図示しないバル
ブを通して反応ガスが導入されると、プラズマ１０が生
成される。生成されたプラズマ１０は、磁力線によって
基板８方向に誘導される。The antenna 1a, 1b, 1c emits an electromagnetic wave corresponding to the power supplied to each of the antennas 1a, 1b, 1c by the control signal of the power source control arithmetic unit 4, and the electromagnetic wave enters the vacuum container 7 through the vacuum window 11. On the other hand, at the same time when the electromagnetic waves are radiated from the antennas 1a to 1c, a magnetic field is generated by the electromagnetic coils 6a and 6b, and a region that satisfies the electron cyclotron resonance condition is formed in the vacuum container 7. Then, when a reaction gas is introduced into this region through a valve (not shown), plasma 10 is generated. The generated plasma 10 is guided toward the substrate 8 by the magnetic lines of force.
【００１８】図２は、電源制御演算器４の制御手順を示
すフローチャートである。電源制御用演算器４は、先
ず、オペレータが入力装置１４から入力する作動条件デ
ータ（反応ガス種，目標均一度），制御変数データ（初
期給電電圧，重み係数）を読み込む（ステップ１）。次
に電磁波の放射でプラズマ１０を発生させ（ステップ
２）ると、各光センサ２ａ〜２ｄの検出信号を取り込
み、プラズマの光分布を算出する（ステップ３）。そし
て、この光分布つまりプラズマの均一度がステップ１で
取り込んだ目標値に達しているか否かを判定し（ステッ
プ４）、目標値に達していないときは次のステップ５に
進む。FIG. 2 is a flow chart showing the control procedure of the power supply control calculator 4. The power supply control computing unit 4 first reads operating condition data (reaction gas species, target uniformity) and control variable data (initial power supply voltage, weighting factor) input by the operator from the input device 14 (step 1). Next, when the plasma 10 is generated by the radiation of electromagnetic waves (step 2), the detection signals of the respective photosensors 2a to 2d are taken in and the light distribution of the plasma is calculated (step 3). Then, it is determined whether or not the light distribution, that is, the uniformity of plasma has reached the target value taken in step 1 (step 4). If the target value has not been reached, the process proceeds to the next step 5.
【００１９】ステップ５で電源制御用演算器４は、プラ
ズマ密度の疎な部分に当たるアンテナの放射強度を強め
る様に、また、プラズマ密度の密な部分に当たるアンテ
ナの放射強度を弱める様に、各アンテナの補正給電電圧
を計算する。この時、各アンテナへの給電電圧の変化
は、プラズマの密度変化に応じて重みを付け、アンテナ
への給電電力の和は一定にするように計算する。そし
て、次のステップ６で補正給電電圧を給電する。In step 5, the power supply control computing unit 4 increases the radiation intensity of the antenna that hits the sparse plasma density portion and weakens the radiation intensity of the antenna that hits the dense plasma density portion. Calculate the corrected supply voltage of. At this time, the change in the voltage supplied to each antenna is weighted according to the change in the plasma density, and the sum of the power supplied to the antenna is calculated to be constant. Then, in the next step 6, the corrected power supply voltage is supplied.
【００２０】以上のステップ２〜ステップ６を繰り返す
ことで、プラズマ１０は均一に生成され、このプラズマ
１０は磁力線によって基板８に運ばれ、均一なプラズマ
処理がなされる。この一連の制御及びプラズマ分布情報
はＣＲＴに画像情報として表示され、キーボード等の入
力装置15を用いて作業者が情報のストック、制御変数の
指示を行なう。この入力装置１５から処理終了の命令が
入力されたときはステップ７で終了と判定され、このプ
ラズマ処理を終了する。By repeating the above steps 2 to 6, the plasma 10 is uniformly generated, and the plasma 10 is carried to the substrate 8 by the lines of magnetic force, and uniform plasma processing is performed. This series of control and plasma distribution information is displayed on the CRT as image information, and an operator uses an input device 15 such as a keyboard to stock information and instruct control variables. When a processing end command is input from the input device 15, it is determined to end in step 7, and the plasma processing ends.
【００２１】電磁波源として用いるアンテナは、図１に
示した三角板を組み合わせたアンテナに限定されるもの
ではなく、図４に示すようなヘリカルアンテナ１２ａ，
１２ｂ，１２ｃでもよく、更に、ダイポールアンテナや
ループアンテナ等の線状アンテナ、またはマイクロスト
リップアンテナ等の板状アンテナであっても良い。特に
指向性の強いアンテナで電磁波源を構成することによっ
て、プラズマ生成位置とアンテナとの関連性を強めるこ
とができ、制御し易くできる。また、光センサは図１に
示すように複数のセンサを間隔を開けて設置する構成に
限定されるものでなく、一ヶ所にカメラを設置する構成
であっても良い。The antenna used as the electromagnetic wave source is not limited to the antenna in which the triangular plates shown in FIG. 1 are combined, but the helical antenna 12a as shown in FIG.
12b, 12c, or a linear antenna such as a dipole antenna or a loop antenna, or a plate antenna such as a microstrip antenna. In particular, by configuring the electromagnetic wave source with an antenna having a strong directivity, the relationship between the plasma generation position and the antenna can be strengthened, and control can be facilitated. Further, the optical sensor is not limited to the configuration in which a plurality of sensors are installed at intervals as shown in FIG. 1, and the configuration in which the camera is installed in one place may be used.
【００２２】図５は、本発明の第２実施例に係るプラズ
マ処理装置の真空容器７の構成図である。本実施例のプ
ラズマ処理装置は、第１実施例と同様の原理でプラズマ
を生成し、プラズマ１０を試料面へ誘導している。しか
し、本実施例ではアンテナ対応に高周波電源を設けるの
ではなく、同一の高周波電源（図示省略）から分配器１
３ａ，１３ｂ…により電力を複数のアンテナに分配給電
し、第１実施例より電源数を減らしコスト低減，省スペ
ース化を図っている。FIG. 5 is a configuration diagram of the vacuum container 7 of the plasma processing apparatus according to the second embodiment of the present invention. The plasma processing apparatus of this embodiment generates plasma on the same principle as in the first embodiment and guides the plasma 10 to the sample surface. However, in this embodiment, instead of providing a high-frequency power source for the antenna, the distributor 1 is supplied from the same high-frequency power source (not shown).
Electric power is distributed and fed to a plurality of antennas by 3a, 13b ..., The number of power sources is reduced as compared with the first embodiment, and cost reduction and space saving are achieved.
【００２３】本実施例では、分配器で給電ケーブルを分
岐することによって、各アンテナに供給する給電電力を
分配すると共に、分配器間或いは分配器とアンテナ給電
部間の給電ケーブルの長さを調整することで、各アンテ
ナに給電される電圧の位相を変えることができ、電源制
御用演算器無しでも第１実施例と同様にプラズマ密度分
布が均一になるように電磁波強度分布を制御できる。ま
た、本実施例で示された同一電源から給電されている複
数のアンテナを一つのアンテナ系と見なし、各アンテナ
系に対して第１実施例と同様な電源制御用演算器を用い
て制御し、より大面積ウェハのプラズマ処理を行うこと
ができる。In the present embodiment, the power supply cable is branched by the distributor to distribute the power supplied to each antenna and adjust the length of the power supply cable between the distributors or between the distributor and the antenna power supply unit. By doing so, the phase of the voltage supplied to each antenna can be changed, and the electromagnetic wave intensity distribution can be controlled so that the plasma density distribution becomes uniform, as in the first embodiment, even without a power supply control arithmetic unit. Further, a plurality of antennas fed from the same power source shown in this embodiment are regarded as one antenna system, and each antenna system is controlled by using the same power supply control arithmetic unit as in the first embodiment. It is possible to perform plasma processing on a larger area wafer.
【００２４】尚、上記実施例は、電子サイクロトロン共
鳴領域で生成されるプラズマの密度分布の均一度を向上
させるために、プラズマ反応室（真空容器）への入射電
磁波強度分布を制御しているが、本発明は上述の実施例
に限定されるものではなく、磁場発生を制御すること
で、また磁場発生と電磁波発生を両方制御することでプ
ラズマ密度を制御することも可能である。In the above embodiment, the intensity distribution of the electromagnetic wave incident on the plasma reaction chamber (vacuum container) is controlled in order to improve the uniformity of the density distribution of the plasma generated in the electron cyclotron resonance region. The present invention is not limited to the above-mentioned embodiment, but it is also possible to control the plasma density by controlling the magnetic field generation or by controlling both the magnetic field generation and the electromagnetic wave generation.
【００２５】[0025]
【発明の効果】高周波電力と磁場を印加することにより
真空容器１内に電子サイクロトロン共鳴条件を発生させ
る手段と複数の電磁波源と該記電磁波源への供給電力を
個別に変化させる制御装置で構成したことを特徴とした
プラズマ処理装置。光センサ信号から推定したプラズマ
密度分布に対して各アンテナへの給電電力を制御して、
均一度の高いプラズマを生成する。その結果、ウェハ表
面で均一なプラズマ処理が行なわれる。EFFECTS OF THE INVENTION Consisting of means for generating electron cyclotron resonance conditions in the vacuum container 1 by applying high frequency power and magnetic field, a plurality of electromagnetic wave sources, and a controller for individually changing the power supplied to the electromagnetic wave sources. A plasma processing apparatus characterized by the above. Control the power supply to each antenna for the plasma density distribution estimated from the optical sensor signal,
A highly uniform plasma is generated. As a result, uniform plasma processing is performed on the wafer surface.
【００２６】本発明によれば、装置の小型化を図ること
ができ、しかも、大面積ウェハの均一なプラズマ処理が
可能となる。According to the present invention, the size of the apparatus can be reduced, and moreover, a large area wafer can be subjected to uniform plasma processing.
【図１】本発明の第１実施例に係るプラズマ処理装置の
構成図である。FIG. 1 is a configuration diagram of a plasma processing apparatus according to a first embodiment of the present invention.
【図２】図１に示す電源制御用演算器の処理手順を示す
フローチャートである。FIG. 2 is a flowchart showing a processing procedure of a power supply control arithmetic unit shown in FIG.
【図３】図１に示すプラズマ処理装置の機能構成図であ
る。FIG. 3 is a functional configuration diagram of the plasma processing apparatus shown in FIG.
【図４】ヘリカルアンテナを用いたプラズマ処理装置の
要部構成図である。FIG. 4 is a main part configuration diagram of a plasma processing apparatus using a helical antenna.
【図５】本発明の第２実施例に係るプラズマ処理装置の
要部構成図である。FIG. 5 is a main part configuration diagram of a plasma processing apparatus according to a second embodiment of the present invention.
【図６】従来の実施例のプラズマ処理装置の全体構成を
示す縦断面図である。FIG. 6 is a vertical sectional view showing the overall configuration of a plasma processing apparatus of a conventional example.
１ａ，１ｂ，１ｃ，１ｄ，１ｅ，１ｆ…アンテナ、２
ａ，２ｂ，２ｃ，２ｄ，２ｅ，２ｆ，２ｇ…光センサ、
３ａ，３ｂ，３ｃ…高周波電源、４…電源制御用演算
器、５…センサ用ケーブル、６…磁気コイル、７…真空
容器、８…基板（ウェハ）、９…基板ホルダ、10…プラ
ズマ、11…真空窓、12ａ，12ｂ，12ｃ…ヘリカルアンテ
ナ、13ａ，13ｂ…分配器、14…給電ケーブル、15…入力
装置、16…導波管、17…電源制御用信号ケーブル、18…
ディスプレイ装置、20…アンテナ室。1a, 1b, 1c, 1d, 1e, 1f ... Antenna, 2
a, 2b, 2c, 2d, 2e, 2f, 2g ... Optical sensor,
3a, 3b, 3c ... High frequency power supply, 4 ... Power supply control calculator, 5 ... Sensor cable, 6 ... Magnetic coil, 7 ... Vacuum container, 8 ... Substrate (wafer), 9 ... Substrate holder, 10 ... Plasma, 11 ... Vacuum windows, 12a, 12b, 12c ... Helical antennas, 13a, 13b ... Distributor, 14 ... Feed cable, 15 ... Input device, 16 ... Waveguide, 17 ... Power control signal cable, 18 ...
Display device, 20 ... Antenna room.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 数見 秀之 茨城県日立市大みか町七丁目２番１号 株 式会社日立製作所エネルギー研究所内 (72)発明者 横森 昭仁 茨城県日立市大みか町七丁目２番１号 株 式会社日立製作所エネルギー研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hideyuki Kazumi, Inventor 7-2-1 Omika-cho, Hitachi City, Hitachi, Ibaraki Prefecture Energy Research Laboratory, Hitachi, Ltd. (72) Akihito Yokomori, 7-chome, Omika-cho, Hitachi City, Ibaraki Prefecture 2-1 Hitachi Ltd. Energy Research Laboratory
Claims (13)
の試料に対向する位置にアンテナを設置し、該アンテナ
から電磁波を放射させると共に磁気コイルから磁場を印
加して試料前面に電子サイクロトロン共鳴条件を満たす
領域を発生させ、反応ガスを真空室内に導入して前記領
域にプラズマを発生させ、試料をプラズマ処理するプラ
ズマ処理装置において、前記アンテナとして夫々別の高
周波電源から電力が供給される複数のアンテナを設ける
と共に、前記プラズマの発光状態を検出する光検出手段
と、該光検出手段の検出信号から前記プラズマの発光分
布を求め該発光分布を均一分布とする各アンテナ供給電
力を算出し算出した値により前記各高周波電源を制御す
る電源制御手段とを設けたことを特徴とするプラズマ処
理装置。1. An antenna is installed at a position facing a sample to be plasma-processed placed in a vacuum chamber, and an electromagnetic wave is radiated from the antenna and a magnetic field is applied from a magnetic coil to set electron cyclotron resonance conditions on the front surface of the sample. In a plasma processing apparatus for generating a region to be filled, introducing a reaction gas into a vacuum chamber to generate plasma in the region, and performing plasma processing on a sample, in the plasma processing apparatus, a plurality of antennas to which power is supplied from different high frequency power sources, respectively. And a light detection unit for detecting the light emission state of the plasma, and a value calculated by calculating each antenna power supply that obtains the light emission distribution of the plasma from the detection signal of the light detection unit and makes the light emission distribution a uniform distribution. And a power supply control means for controlling each of the high frequency power supplies.
の試料に対向する位置にアンテナを設置し、該アンテナ
から電磁波を放射させると共に磁気コイルから磁場を印
加して試料前面に電子サイクロトロン共鳴条件を満たす
領域を発生させ、反応ガスを真空室内に導入して前記領
域にプラズマを発生させ、試料をプラズマ処理するプラ
ズマ処理装置において、同一高周波電源で駆動される複
数のアンテナであって各アンテナから放射される電磁波
の及ぶ範囲でプラズマ密度が均一となるように高周波電
源と各アンテナとの接続ケーブルの長さが調整されたア
ンテナ系を前記試料前面に複数設けると共に、前記プラ
ズマの全体の発光状態を検出する光検出手段と、該光検
出手段の検出信号から前記プラズマの全体の発光分布を
求め該発光分布を均一分布とする各アンテナ系への供給
電力を算出し算出した値により前記各アンテナ系の高周
波電源を制御する電源制御手段とを設けたことを特徴と
するプラズマ処理装置。2. An antenna is installed at a position facing a sample to be plasma-processed in a vacuum chamber, and an electromagnetic wave is radiated from the antenna and a magnetic field is applied from a magnetic coil to set an electron cyclotron resonance condition on the front surface of the sample. In a plasma processing apparatus that generates a filling area, introduces a reaction gas into a vacuum chamber to generate plasma in the area, and plasma-processes a sample, a plurality of antennas driven by the same high-frequency power source are radiated from each antenna. A plurality of antenna systems in which the length of the connection cable between the high-frequency power source and each antenna is adjusted so that the plasma density is uniform within the range of the electromagnetic waves are provided on the front surface of the sample, and the overall emission state of the plasma is The light detection means for detection and the light emission distribution of the entire plasma are obtained from the detection signal of the light detection means, and the light emission distribution is averaged. A plasma processing apparatus comprising: a power supply control means for calculating a power supply to each antenna system having one distribution and controlling a high frequency power supply of each antenna system based on the calculated value.
の試料に対向する位置にアンテナを設置し、該アンテナ
から電磁波を放射させると共に磁気コイルから磁場を印
加して試料前面に電子サイクロトロン共鳴条件を満たす
領域を発生させ、反応ガスを真空室内に導入して前記領
域にプラズマを発生させ、試料をプラズマ処理するプラ
ズマ処理装置において、前記アンテナとして夫々別の高
周波電源から電力が供給される複数のアンテナを設ける
と共に、前記プラズマの発光状態を検出する光検出手段
と、該光検出手段の検出信号から前記プラズマの発光分
布を求め該発光分布を均一分布とする各アンテナ供給電
力を算出し算出した値により前記各高周波電源を制御す
る電源制御手段と、前記プラズマの発光分布を画面に表
示する表示手段とを設けたことを特徴とするプラズマ処
理装置。3. An electron cyclotron resonance condition is set on the front surface of the sample by installing an antenna at a position facing a sample to be plasma-processed placed in a vacuum chamber, radiating an electromagnetic wave from the antenna and applying a magnetic field from a magnetic coil. In a plasma processing apparatus for generating a region to be filled, introducing a reaction gas into a vacuum chamber to generate plasma in the region, and performing plasma processing on a sample, in the plasma processing apparatus, a plurality of antennas to which power is supplied from different high frequency power sources, respectively. And a light detection unit for detecting the light emission state of the plasma, and a value calculated by calculating each antenna power supply that obtains the light emission distribution of the plasma from the detection signal of the light detection unit and makes the light emission distribution a uniform distribution. A power source control means for controlling each high frequency power source and a display means for displaying the plasma emission distribution on the screen. A plasma processing apparatus characterized by being provided.
の試料に対向する位置にアンテナを設置し、該アンテナ
から電磁波を放射させると共に磁気コイルから磁場を印
加して試料前面に電子サイクロトロン共鳴条件を満たす
領域を発生させ、反応ガスを真空室内に導入して前記領
域にプラズマを発生させ、試料をプラズマ処理するプラ
ズマ処理装置において、同一高周波電源で駆動される複
数のアンテナであって各アンテナから放射される電磁波
の及ぶ範囲でプラズマ密度が均一となるように高周波電
源と各アンテナとの接続ケーブルの長さが調整されたア
ンテナ系を前記試料前面に複数設けると共に、前記プラ
ズマの全体の発光状態を検出する光検出手段と、該光検
出手段の検出信号から前記プラズマの全体の発光分布を
求め該発光分布を均一分布とする各アンテナ系への供給
電力を算出し算出した値により前記各アンテナ系の高周
波電源を制御する電源制御手段と、前記プラズマの全体
の発光分布を画面に表示する表示手段を設けたことを特
徴とするプラズマ処理装置。4. An antenna is installed at a position facing a sample to be plasma-treated in a vacuum chamber, and an electromagnetic wave is radiated from the antenna and a magnetic field is applied from a magnetic coil to set electron cyclotron resonance conditions on the front surface of the sample. In a plasma processing apparatus that generates a filling area, introduces a reaction gas into a vacuum chamber to generate plasma in the area, and plasma-processes a sample, a plurality of antennas driven by the same high-frequency power source are radiated from each antenna. A plurality of antenna systems in which the length of the connection cable between the high-frequency power source and each antenna is adjusted so that the plasma density is uniform within the range of the electromagnetic waves are provided on the front surface of the sample, and the overall emission state of the plasma is The light detection means for detection and the light emission distribution of the entire plasma are obtained from the detection signal of the light detection means, and the light emission distribution is averaged. A power supply control means for controlling the high frequency power supply of each antenna system based on the calculated power supplied to each antenna system having one distribution and a display means for displaying the overall emission distribution of the plasma on the screen are provided. A plasma processing apparatus characterized by the above.
の試料に対向する位置にアンテナを設置し、該アンテナ
から電磁波を放射させると共に磁気コイルから磁場を印
加して試料前面に電子サイクロトロン共鳴条件を満たす
領域を発生させ、反応ガスを真空室内に導入して前記領
域にプラズマを発生させ、試料をプラズマ処理するプラ
ズマ処理装置において、前記アンテナとして夫々別の高
周波電源から電力が供給される複数のアンテナを設ける
と共に、前記プラズマ密度分布の目標均一度を設定入力
する入力手段と、前記プラズマの発光状態を検出する光
検出手段と、該光検出手段の検出信号から前記プラズマ
の密度分布を求め該密度分布を前記目標均一度とする各
アンテナ供給電力を算出し算出した値により前記各高周
波電源を制御する電源制御手段とを設けたことを特徴と
するプラズマ処理装置。5. An antenna is installed at a position facing a sample to be plasma-treated in a vacuum chamber, and an electromagnetic wave is radiated from the antenna and a magnetic field is applied from a magnetic coil to set electron cyclotron resonance conditions on the front surface of the sample. In a plasma processing apparatus for generating a region to be filled, introducing a reaction gas into a vacuum chamber to generate plasma in the region, and performing plasma processing on a sample, in the plasma processing apparatus, a plurality of antennas to which power is supplied from different high frequency power sources, respectively. In addition, the input means for setting and inputting the target uniformity of the plasma density distribution, the light detecting means for detecting the light emission state of the plasma, and the density distribution of the plasma obtained from the detection signal of the light detecting means The power supplied to each antenna whose distribution is the target uniformity is calculated, and the power for controlling each high-frequency power source is calculated based on the calculated value. A plasma processing apparatus comprising a source control means.
の試料に対向する位置にアンテナを設置し、該アンテナ
から電磁波を放射させると共に磁気コイルから磁場を印
加して試料前面に電子サイクロトロン共鳴条件を満たす
領域を発生させ、反応ガスを真空室内に導入して前記領
域にプラズマを発生させ、試料をプラズマ処理するプラ
ズマ処理装置において、同一高周波電源で駆動される複
数のアンテナであって各アンテナから放射される電磁波
の及ぶ範囲でプラズマ密度が均一となるように高周波電
源と各アンテナとの接続ケーブルの長さが調整されたア
ンテナ系を前記試料前面に複数設けると共に、前記プラ
ズマの全体の密度分布の目標均一度を設定入力する入力
手段と、前記プラズマの全体の発光状態を検出する光検
出手段と、該光検出手段の検出信号から前記プラズマの
密度分布を求め該密度分布が前記目標均一度となる各ア
ンテナ系への供給電力を算出し算出した値により前記各
アンテナ系の高周波電源を制御する電源制御手段とを設
けたことを特徴とするプラズマ処理装置。6. An electron cyclotron resonance condition is set on the front surface of the sample by installing an antenna at a position facing a sample to be plasma-processed placed in a vacuum chamber, radiating an electromagnetic wave from the antenna and applying a magnetic field from a magnetic coil. In a plasma processing apparatus that generates a filling area, introduces a reaction gas into a vacuum chamber to generate plasma in the area, and plasma-processes a sample, a plurality of antennas driven by the same high-frequency power source are radiated from each antenna. A plurality of antenna systems in which the length of the connection cable between the high-frequency power source and each antenna is adjusted so that the plasma density is uniform within the range of the electromagnetic wave are provided on the front surface of the sample, and the density distribution of the entire plasma is Input means for setting and inputting target homogeneity, light detecting means for detecting the overall light emitting state of the plasma, and the light detecting means A power supply control means for calculating a density distribution of the plasma from a detection signal of the means, calculating a power supplied to each antenna system where the density distribution has the target uniformity, and controlling a high frequency power supply of each antenna system by the calculated value A plasma processing apparatus comprising:
御手段は、プラズマ発光中所定時間毎にプラズマ密度均
一処理を行うことを特徴とするプラズマ処理装置。7. The plasma processing apparatus according to claim 1, wherein the power supply control means performs a uniform plasma density process every predetermined time during plasma emission.
御手段は、各アンテナと試料との相対的配置位置に基づ
く重み付けをして各アンテナへの給電電力の計算を行う
ことを特徴とするプラズマ処理装置。8. The power supply control means according to claim 1, wherein the power supply control means performs weighting based on a relative arrangement position between each antenna and the sample, and calculates the power supplied to each antenna. Plasma processing equipment.
係数を設定入力する入力手段を備えることを特徴とする
プラズマ処理装置。9. The plasma processing apparatus according to claim 8, further comprising input means for setting and inputting a weighting coefficient for weighting.
いて、各アンテナに供給する電力の総和を一定にするこ
とを特徴とするプラズマ処理装置。10. The plasma processing apparatus according to claim 1, wherein the total sum of electric power supplied to each antenna is constant.
象の試料に対向する位置にアンテナを設置し、該アンテ
ナから電磁波を放射させると共に磁気コイルから磁場を
印加して試料前面に電子サイクロトロン共鳴条件を満た
す領域を発生させ、反応ガスを真空室内に導入して前記
領域にプラズマを発生させ試料をプラズマ処理するプラ
ズマ処理装置において、前記アンテナとして同一高周波
電源から電力が供給される複数のアンテナを設けると共
に、各アンテナから放射される電磁波により前記プラズ
マの密度分布が均一となるように前記高周波電源と各ア
ンテナとを接続するケーブルの長さが調整されているこ
とを特徴とするプラズマ処理装置。11. An antenna is installed at a position facing a sample to be plasma-treated in a vacuum chamber, and an electromagnetic wave is radiated from the antenna and a magnetic field is applied from a magnetic coil to set electron cyclotron resonance conditions on the front surface of the sample. In a plasma processing apparatus for generating a region to be filled and introducing a reaction gas into a vacuum chamber to generate plasma in the region to plasma-treat a sample, a plurality of antennas to which power is supplied from the same high-frequency power source are provided as the antennas. A plasma processing apparatus, wherein a length of a cable connecting the high-frequency power source and each antenna is adjusted so that a density distribution of the plasma becomes uniform by an electromagnetic wave emitted from each antenna.
おいて、各アンテナは平面アンテナであることを特徴と
するプラズマ処理装置。12. The plasma processing apparatus according to claim 1, wherein each antenna is a planar antenna.
せ行ってプラズマ密度を均一に制御することを特徴とす
る請求項１乃至請求項１０のいずれかあるいは請求項１
１または請求項１２に記載のプラズマ処理装置。13. The power supply control means also controls the electromagnetic coil to uniformly control the plasma density, or any one of claims 1 to 10.
The plasma processing apparatus of claim 1 or claim 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5225695A JPH0786179A (en) | 1993-09-10 | 1993-09-10 | Plasma processing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5225695A JPH0786179A (en) | 1993-09-10 | 1993-09-10 | Plasma processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0786179A true JPH0786179A (en) | 1995-03-31 |
Family
ID=16833350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5225695A Pending JPH0786179A (en) | 1993-09-10 | 1993-09-10 | Plasma processing system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786179A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08171978A (en) * | 1994-08-25 | 1996-07-02 | Hughes Aircraft Co | Corona source for corona discharge formation and fluid wastedisposal by corona discharge |
| WO1998013856A1 (en) * | 1996-09-27 | 1998-04-02 | Surface Technology Systems Limited | Plasma processing apparatus |
| JPH10233297A (en) * | 1996-09-27 | 1998-09-02 | Surface Technol Syst Ltd | Plasma treatment device |
| JP2000058296A (en) * | 1998-08-06 | 2000-02-25 | Foi:Kk | Plasma treatment device |
| US6256186B1 (en) | 1997-06-03 | 2001-07-03 | Trikon Equipments Limited | Electrostatic chucks |
| JP2002050614A (en) * | 2000-08-03 | 2002-02-15 | Tokyo Electron Ltd | Plasma processing apparatus |
| KR100378715B1 (en) * | 2000-10-10 | 2003-04-07 | 오범환 | Apparatus and method for correcting Array type plasma source output and uniformity for high quality process |
| JP2006216605A (en) * | 2005-02-01 | 2006-08-17 | Hitachi High-Technologies Corp | Plasma treating apparatus |
| US7632419B1 (en) * | 1997-10-06 | 2009-12-15 | Applied Materials, Inc. | Apparatus and method for monitoring processing of a substrate |
| US7878145B2 (en) | 2004-06-02 | 2011-02-01 | Varian Semiconductor Equipment Associates, Inc. | Monitoring plasma ion implantation systems for fault detection and process control |
| KR101299902B1 (en) * | 2011-07-19 | 2013-08-23 | (주)아이씨디 | Apparatus for measuring inductively coupled plasma uniformity and method of measuring using thereof |
-
1993
- 1993-09-10 JP JP5225695A patent/JPH0786179A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08171978A (en) * | 1994-08-25 | 1996-07-02 | Hughes Aircraft Co | Corona source for corona discharge formation and fluid wastedisposal by corona discharge |
| US6458239B1 (en) | 1996-09-27 | 2002-10-01 | Surface Technology Systems Plc | Plasma processing apparatus |
| WO1998013856A1 (en) * | 1996-09-27 | 1998-04-02 | Surface Technology Systems Limited | Plasma processing apparatus |
| JPH10233297A (en) * | 1996-09-27 | 1998-09-02 | Surface Technol Syst Ltd | Plasma treatment device |
| US6256186B1 (en) | 1997-06-03 | 2001-07-03 | Trikon Equipments Limited | Electrostatic chucks |
| US7632419B1 (en) * | 1997-10-06 | 2009-12-15 | Applied Materials, Inc. | Apparatus and method for monitoring processing of a substrate |
| JP2000058296A (en) * | 1998-08-06 | 2000-02-25 | Foi:Kk | Plasma treatment device |
| JP2002050614A (en) * | 2000-08-03 | 2002-02-15 | Tokyo Electron Ltd | Plasma processing apparatus |
| KR100378715B1 (en) * | 2000-10-10 | 2003-04-07 | 오범환 | Apparatus and method for correcting Array type plasma source output and uniformity for high quality process |
| US7878145B2 (en) | 2004-06-02 | 2011-02-01 | Varian Semiconductor Equipment Associates, Inc. | Monitoring plasma ion implantation systems for fault detection and process control |
| JP2006216605A (en) * | 2005-02-01 | 2006-08-17 | Hitachi High-Technologies Corp | Plasma treating apparatus |
| US7658815B2 (en) | 2005-02-01 | 2010-02-09 | Hitachi High-Technologies Corporation | Plasma processing apparatus capable of controlling plasma emission intensity |
| JP4601439B2 (en) * | 2005-02-01 | 2010-12-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| KR101299902B1 (en) * | 2011-07-19 | 2013-08-23 | (주)아이씨디 | Apparatus for measuring inductively coupled plasma uniformity and method of measuring using thereof |
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