JPH0786034A - Magnetoresistive material and electromagnetic sensor using the same - Google Patents
Magnetoresistive material and electromagnetic sensor using the sameInfo
- Publication number
- JPH0786034A JPH0786034A JP5231303A JP23130393A JPH0786034A JP H0786034 A JPH0786034 A JP H0786034A JP 5231303 A JP5231303 A JP 5231303A JP 23130393 A JP23130393 A JP 23130393A JP H0786034 A JPH0786034 A JP H0786034A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive material
- layer
- thickness
- magnetic field
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁界センサに使用される
磁気抵抗材料にかかわり、特に磁気記録において再生ヘ
ッドとして使用される磁気抵抗効果型ヘッド（ＭＲヘッ
ド）の磁気抵抗材料に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive material used for a magnetic field sensor, and more particularly to a magnetoresistive material for a magnetoresistive head (MR head) used as a reproducing head in magnetic recording.
【０００２】[0002]
【従来の技術】近年磁気記録技術の進歩は著しく、家庭
用ＶＴＲの分野では小型、計量化のために、また磁気デ
ィスク装置の分野では小型、大容量化のために記録密度
の高密度化が進められている。特に磁気ディスク装置を
例にとると、記録密度を向上させるため記録再生分離型
ヘッドの開発が活発である。これらの記録再生分離型ヘ
ッドの再生ヘッドとしては通常ＭＲヘッドが使用されて
いる。磁気ディスク装置の小型化のために媒体とヘッド
との相対速度が低下すると従来のインダクティブヘッド
では出力が低下するという欠点を有しているが、ＭＲヘ
ッドは出力が相対速度に依存せず一定であるという特徴
を有するからである。2. Description of the Related Art In recent years, magnetic recording technology has made remarkable progress. In the field of home VTRs, the recording density has been increased for the purpose of downsizing and weighing, and in the field of magnetic disk devices for downsizing and increasing the capacity. It is being advanced. Particularly in the case of a magnetic disk device as an example, development of a recording / reproducing separated type head is active in order to improve recording density. An MR head is usually used as the reproducing head of these recording / reproducing separated type heads. The conventional inductive head has a drawback that the output decreases when the relative speed between the medium and the head decreases due to downsizing of the magnetic disk device, but the MR head has a constant output that does not depend on the relative speed. This is because it has the characteristic of being present.
【０００３】このＭＲヘッドの感磁部には通常パーマロ
イ単層膜が使用されている。パーマロイ膜は異方性磁界
が小さいため感度はよいが、磁気抵抗変化率は高々３％
と決して大きくはない。そのためパーマロイ単層膜を感
磁部に用いたＭＲヘッドは再生出力が必ずしも充分でな
いという欠点がある。一方、数原子層の非磁性層が異方
性磁界の異なる強磁性層に挟まれて積層されている磁気
抵抗材料が大きな磁気抵抗変化率を示すことは、Ｃｏ／
Ｃｕ／ＦｅＮｉ（T.Shinjo and H.Yamamoto:J.Phys.So
c.Jpn.,Vol.59,(1990)p.3061)等において見いだされて
おり公知である。しかし、これらの材料においても磁気
抵抗変化率は１０％未満で、且つこのような値を得るに
は１００Ｏｅ以上の印加磁界が必要で、磁気ヘッドへの
応用が困難になるといった問題があった。A permalloy single-layer film is usually used for the magnetic sensing portion of this MR head. Permalloy film has a small anisotropic magnetic field and thus has good sensitivity, but the magnetoresistance change rate is at most 3%.
And never big. Therefore, the MR head using the permalloy single layer film as the magnetic sensing portion has a drawback that the reproduction output is not always sufficient. On the other hand, the fact that a magnetoresistive material in which a non-magnetic layer of several atomic layers is sandwiched between ferromagnetic layers having different anisotropic magnetic fields exhibits a large magnetoresistive change rate means that Co /
Cu / FeNi (T. Shinjo and H. Yamamoto: J. Phys. So
c. Jpn., Vol.59, (1990) p.3061) and the like, and is publicly known. However, even in these materials, the magnetoresistance change rate is less than 10%, and an applied magnetic field of 100 Oe or more is required to obtain such a value, which makes it difficult to apply to a magnetic head.
【０００４】[0004]
【発明が解決しようとする課題】したがって本発明の課
題は、強磁性層が非磁性層を挟んで積層されている磁気
抵抗材料を、よりＭＲヘッドの応用が容易な磁気抵抗材
料にするため、更に磁気抵抗変化率の高い材料を提供す
ることにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to make a magnetoresistive material in which ferromagnetic layers are laminated with a nonmagnetic layer sandwiched between them so that the MR head can be applied more easily. Another object is to provide a material having a high magnetoresistance change rate.
【０００５】[0005]
【課題を解決するための手段】上記課題は、強磁性層が
非磁性層を挟んで積層されている磁気抵抗材料におい
て、強磁性層がＣｒ1-XＴｅXで示される組成を有しその
組成範囲が ０．５≦ｘ≦０．８ であることによって解決される。SUMMARY OF THE INVENTION In the magnetoresistive material in which ferromagnetic layers are laminated with a non-magnetic layer in between, the ferromagnetic layer has a composition represented by Cr 1 -X Te X. This is solved by the composition range of 0.5 ≦ x ≦ 0.8.
【０００６】[0006]
【作用】数原子層の非磁性層が異方性磁界の異なる強磁
性層に挟まれた積層膜が磁気抵抗効果を示すことは Sin
jo 等による文献（T.Shinjo and H.Yamamoto:J.Phys.So
c.Jpn.,Vol.59,(1990)p.3061)で既に公知である。これ
は、次のように理解される。積層膜に対し、ある方向に
磁界を印加したときに、２つの磁性膜の異方性磁界が異
なるために磁化が反転する磁界に差が生じ、ある範囲の
磁界においてこれら磁性層の磁化が反平行になる状態が
実現する。更に強い磁界の印加でこれら磁化は平行な状
態となるが、磁化が平行のときの電気抵抗は反平行のと
きより小さくなる。これが、積層膜における磁気抵抗効
果の一つとして知られており、Ｃｏ／Ｃｕ／ＦｅＮｉは
その代表的系である。しかし、これらの材料においては
抵抗変化率は１０％未満であり、応用上更に大きな変化
率が望まれていた。[Function] A laminated film in which a non-magnetic layer of several atomic layers is sandwiched between ferromagnetic layers having different anisotropic magnetic fields exhibits a magnetoresistive effect.
References by jo et al. (T. Shinjo and H. Yamamoto: J. Phys. So
c. Jpn., Vol. 59, (1990) p. 3061). This is understood as follows. When a magnetic field is applied to the laminated film in a certain direction, the anisotropic magnetic fields of the two magnetic films are different from each other, so that the magnetic fields at which the magnetizations are reversed are different from each other, and the magnetizations of these magnetic layers are reversed in a certain range of magnetic field. A parallel state is realized. When a stronger magnetic field is applied, these magnetizations become parallel, but the electric resistance when the magnetizations are parallel becomes smaller than when they are antiparallel. This is known as one of the magnetoresistive effects in the laminated film, and Co / Cu / FeNi is a typical system. However, in these materials, the resistance change rate is less than 10%, and a larger change rate is desired for application.
【０００７】本発明による考えは、この磁気抵抗効果の
発生メカニズムに関する考察から導かれた。電気伝導を
担うのは多数派スピンと少数派スピンのフェルミ準位近
傍の電子であるが、２つの磁性層の磁化が平行の場合と
反平行の場合では何れか一方の磁性層の多数派スピンと
少数派スピンの電子状態密度が逆になる。従って、伝導
に際して電子が２つの磁性層を横切る場合、磁化が平行
の場合と反平行の場合とではそれぞれのスピンの電子が
各磁性層内で取り得るフェルミ準位近傍での状態数が異
なるためために電気抵抗に差が生じると考えられる。そ
こで、もし磁性層のフェルミ準位近傍の電子状態密度が
多数派スピンと少数派スピンで極端に異なる場合、即
ち、一方のスピンの状態密度はフェルミ準位近傍で有限
の値を持ち、他方のスピンの状態密度がフェルミ準位近
傍でほぼ０の場合、２つの磁性層が平行の場合にはフェ
ルミ準位近傍で有限の値を持つ方のスピンの電子は容易
に流れるが、反平行の場合には一方の磁性層で有限の状
態密度を持つスピンは他方の磁性層では０の状態密度と
なるため、何れのスピンの電子も流れなくなり、電気抵
抗は著しく大きくなることが期待される。The idea according to the present invention was derived from the consideration of the mechanism of the magnetoresistive effect. It is the electrons near the Fermi level of the majority spin and the minority spin that are responsible for electrical conduction. However, when the magnetizations of the two magnetic layers are parallel and antiparallel, the majority spin of either magnetic layer is And the electron density of minority spin is reversed. Therefore, when electrons cross two magnetic layers during conduction, the number of states in the vicinity of the Fermi level that electrons of each spin can take in the cases of parallel magnetization and antiparallel magnetization is different. Therefore, it is considered that there is a difference in electric resistance. Therefore, if the electronic state density near the Fermi level of the magnetic layer is extremely different between the majority spin and the minority spin, that is, the density of states of one spin has a finite value near the Fermi level and the other spin has a finite value. When the spin density of states is almost 0 near the Fermi level, electrons with a finite spin near the Fermi level easily flow when the two magnetic layers are parallel, but when antiparallel. In particular, since spins having a finite density of states in one magnetic layer have a density of states of 0 in the other magnetic layer, it is expected that electrons of any spins will not flow and the electric resistance will remarkably increase.
【０００８】ＮｉＡｓ構造を持つＣｒ1-XＴｅXはこのよ
うな電子状態の条件を満たす材料であることが期待され
る。図１は J.Dijkstra（J.Phys.:Cond.Matt.,1(1989)9
141）によって計算されたＣｒ3Ｔｅ4及びＣｒ2Ｔｅ3の
電子状態密度である。図１において、上半分は多数派
（上向き）スピン、下半分は少数派（下向き）スピン状
態を表す。また、ＥFはフェルミエネルギーを示す。多
数派スピンの状態密度はフェルミ準位近傍で有限の値を
持つが、少数派スピンの状態密度はフェルミ準位近傍で
ほぼ０になっているのがわかる。即ちこのような物質は
多数派スピンの電子は金属的な振る舞いを示すが、少数
派スピンの電子は絶縁体あるいは半導体的な振る舞いを
示すと考えられる。従って、このような材料を非磁性物
質を介して２つ組み合わせた場合、磁化が平行な場合は
金属的、反平行の場合は半導体的な特性を示すことが期
待されるのである。そこで、２つの磁性膜の一方にＦｅ
ＭｎあるいはＮｉＯ等の反強磁性膜を結合させて実効的
な磁気異方性を付与すると、磁気異方性の違いに起因し
て外部磁界の大きさによって磁化が平行になる場合と反
平行になる場合が実現される。即ち、この積層膜は外部
磁界の大きさ及び方向によって電気抵抗に著しい変化が
現れることが期待される。本発明者は上記の考えに基づ
きＣｒ1-XＴｅX／Ｃｕ／Ｃｒ1-XＴｅX／ＦｅＭｎの積層
膜を作製し磁気抵抗効果を測定したところ、０．５≦Ｘ
≦０．８において１０％以上の抵抗変化率が得られるこ
とが確認された。Cr 1-X Te x having a NiAs structure is expected to be a material satisfying such an electronic state condition. Figure 1 shows J. Dijkstra (J.Phys.:Cond.Matt.,1(1989)9
141) is the electronic density of states of Cr 3 Te 4 and Cr 2 Te 3 . In FIG. 1, the upper half represents a majority (upward) spin state, and the lower half represents a minority (downward) spin state. Further, E F represents Fermi energy. It can be seen that the density of states of the majority spin has a finite value near the Fermi level, but the density of states of the minority spin is almost 0 near the Fermi level. That is, in such a substance, electrons of majority spins behave like metal, but electrons of minority spins behave like insulator or semiconductor. Therefore, when two such materials are combined through a non-magnetic substance, it is expected that they exhibit metallic characteristics when the magnetizations are parallel, and semiconductor characteristics when the magnetizations are antiparallel. Therefore, Fe on one of the two magnetic films
When an antiferromagnetic film such as Mn or NiO is coupled to give effective magnetic anisotropy, the magnetization becomes parallel due to the difference in magnetic anisotropy depending on the magnitude of the external magnetic field. It will be realized. That is, it is expected that the laminated film will show a significant change in electric resistance depending on the magnitude and direction of the external magnetic field. The present inventor produced a laminated film of Cr 1-X Te x / Cu / Cr 1-x Te x / FeMn based on the above idea and measured the magnetoresistive effect.
It was confirmed that a resistance change rate of 10% or more was obtained when ≦ 0.8.
【０００９】本発明磁気抵抗材料において、非磁性層と
してはＣｒ、Ｃｕ、Ａｕ、Ａｇ、Ａｌ2Ｏ3、およびＮｉ
Ｏの１種または２種以上を用いることができる。これら
は磁性層であるＣｒ1-XＴｅXを磁気的に遮断するのに優
れている材料だからである。特に、高い伝導性を有する
Ｃｕが望ましい。また、反強磁性層としてはＦｅＭｎお
よびＮｉＯの１種または２種をもちいることができる。
これらは室温以上のネール温度を有し、かつ数ｎｍの薄
膜作製が可能だからである。特に、高いネール温度と伝
導性を有するＦｅＭｎが望ましい。なお、ＦｅＭｎを用
いる場合にはＭｎ３０〜６０ｗｔ．％とすればよい。３
０ｗｔ．％未満ではフェリ磁性であり、６０ｗｔ．％を
越えると磁性層との交換結合が弱くなるからである。In the magnetoresistive material of the present invention, the non-magnetic layer is made of Cr, Cu, Au, Ag, Al 2 O 3 , and Ni.
One or two or more types of O can be used. This is because these are excellent materials for magnetically blocking Cr 1 -X Te X , which is the magnetic layer. In particular, Cu having high conductivity is desirable. Further, as the antiferromagnetic layer, one or two kinds of FeMn and NiO can be used.
This is because these have a Neel temperature of room temperature or higher and can form a thin film of several nm. In particular, FeMn having a high Neel temperature and conductivity is desirable. When FeMn is used, Mn of 30 to 60 wt. %And it is sufficient. Three
0 wt. %, It is ferrimagnetic, and 60 wt. This is because if it exceeds%, the exchange coupling with the magnetic layer becomes weak.
【００１０】次に、強磁性層の厚さは０．８〜４ｎｍ、
非磁性層の厚さは０．５〜３ｎｍとする。強磁性層の厚
さが０．８ｎｍ未満では電気抵抗への膜界面の影響が強
くなりすぎ、また４ｎｍを越えると反強磁性層との交換
結合の効果が弱くなるからである。また、非磁性層の厚
さが０．５ｎｍ未満では磁性層の磁気的絶縁が弱く、ま
た３ｎｍを越えると非磁性層内での電子の散乱が大きく
なり磁気抵抗の効果を弱めるからである。反強磁性層を
構成するＦｅＭｎまたはＮｉＯの厚さは４〜１０ｎｍと
する。４ｎｍ未満では交換結合の効果が不十分であり、
また１０ｎｍを越えると反磁性層内での電気抵抗が支配
的になるからである。Next, the thickness of the ferromagnetic layer is 0.8-4 nm,
The thickness of the nonmagnetic layer is 0.5 to 3 nm. This is because if the thickness of the ferromagnetic layer is less than 0.8 nm, the effect of the film interface on the electric resistance becomes too strong, and if it exceeds 4 nm, the effect of exchange coupling with the antiferromagnetic layer becomes weak. Also, if the thickness of the non-magnetic layer is less than 0.5 nm, the magnetic insulation of the magnetic layer is weak, and if it exceeds 3 nm, the scattering of electrons in the non-magnetic layer becomes large and the effect of magnetoresistance is weakened. The thickness of FeMn or NiO forming the antiferromagnetic layer is 4 to 10 nm. If it is less than 4 nm, the effect of exchange coupling is insufficient,
Further, if it exceeds 10 nm, the electric resistance in the diamagnetic layer becomes dominant.
【００１１】[0011]
【実施例】以下に本発明を実施例により説明する。 （実施例１）図２に示すように、Ｓｉ基板上に交換バイ
アス磁界を付与するためのＦｅ−％Ｍｎ反強磁性膜を５
ｎｍ形成し、そのうえに３ｎｍのＣｒ1-YＴｅY（Ｙ＝
０．５５，０．６，０．６５，０．７）強磁性膜を３ｎ
ｍのＣｕ非磁性層を中間に挟んで積層した。Ｆｅ−Ｍｎ
層と接触しているＣｒ1-YＴｅY膜は交換バイアス磁界に
より最上層にあるＣｒ1-YＴｅYより実効的な異方性磁界
が異なり、Ｃｒ1-YＴｅYの異方性磁界が１（ＫＡ／ｍ）
（＝１２Ｏｅ）以下であるのに対し、Ｆｅ−Ｍｎと接触
しているＣｒ1-YＴｅYの異方性磁界は約７（ＫＡ／ｍ）
（＝８８Ｏｅ）であった。そこで、これらの試料に７
（ＫＡ／ｍ）の磁界を印加して、４端子法により磁気抵
抗変化率を測定し、その結果を表１にまとめた。表１か
ら明らかなように、Ｃｒ−Ｔｅを用いた本発明による構
造では従来の磁性膜を用いた積層膜より数倍の大きな磁
気抵抗変化率が得られている。EXAMPLES The present invention will be described below with reference to examples. (Example 1) As shown in FIG. 2, 5% Fe-% Mn antiferromagnetic film for applying an exchange bias magnetic field was formed on a Si substrate.
nm of Cr 1-Y Te Y (Y =
0.55,0.6,0.65,0.7) 3n ferromagnetic film
The Cu non-magnetic layer of m was laminated in the middle. Fe-Mn
The Cr 1-Y Te Y film in contact with the layer has a different effective anisotropy field than Cr 1-Y Te Y in the uppermost layer due to the exchange bias magnetic field, and the anisotropic magnetic field of Cr 1-Y Te Y Is 1 (KA / m)
While it is (= 12 Oe) or less, the anisotropic magnetic field of Cr 1 -Y Te Y in contact with Fe-Mn is about 7 (KA / m).
(= 88 Oe). So, for these samples,
A magnetic field of (KA / m) was applied and the rate of change in magnetoresistance was measured by the 4-terminal method, and the results are summarized in Table 1. As is clear from Table 1, the structure according to the present invention using Cr-Te has a magnetoresistance change rate that is several times as large as that of the laminated film using the conventional magnetic film.
【００１２】[0012]
【表１】 [Table 1]
【００１３】（実施例２）表２に示す積層膜をＳｉ基板
上に形成し、実施例１と同様に磁気抵抗変化率を測定し
た。なお、強磁性層は厚さ３ｎｍのＣｒ0.4Ｔｅ0.6であ
る。結果を表２に示す。Example 2 The laminated film shown in Table 2 was formed on a Si substrate, and the magnetoresistance change rate was measured in the same manner as in Example 1. The ferromagnetic layer is Cr 0.4 Te 0.6 having a thickness of 3 nm. The results are shown in Table 2.
【００１４】[0014]
【表２】 [Table 2]
【００１５】[0015]
【発明の効果】本発明の磁気抵抗材料を磁界センサの感
磁部に用いると、１００Ｏｅ以下の磁界で大幅に再生出
力の向上が達成される。When the magnetoresistive material of the present invention is used in the magnetic sensing part of a magnetic field sensor, the reproduction output is significantly improved in a magnetic field of 100 Oe or less.
【図１】（ａ）Ｃｒ3Ｔｅ4および（ｂ）Ｃｒ2Ｔｅ3の電
子状態密度の計算結果（J.Dijkstra（J.Phys.:Cond.Mat
t.,1(1989)9141）による）である。FIG. 1 is a calculation result of electronic density of states of (a) Cr 3 Te 4 and (b) Cr 2 Te 3 (J. Dijkstra (J. Phys .: Cond. Mat.
t., 1 (1989) 9141)).
【図２】本発明の磁気抵抗材料の断面の構造を示す模式
図である。FIG. 2 is a schematic diagram showing a cross-sectional structure of a magnetoresistive material of the present invention.
１ Ｓｉ基板、２ 厚さ５ｎｍからなるＦｅＭｎ反強磁
性膜、３ 厚さ３ｎｍのＣｒ1-YＴｅYからなる強磁性
層、４ 厚さ３ｎｍのＣｕからなる非磁性層1 Si substrate, 2 FeMn antiferromagnetic film having a thickness of 5 nm, 3 Ferromagnetic layer made of Cr 1 -Y Te Y having a thickness of 3 nm, 4 Nonmagnetic layer made of Cu having a thickness of 3 nm
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 43/10 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 43/10
Claims (7)
いる磁気抵抗材料において、強磁性層がＣｒ1-XＴｅXで
示される組成を有しその組成範囲が ０．５≦ｘ≦０．８ であることを特徴とする磁気抵抗材料。1. In a magnetoresistive material in which ferromagnetic layers are laminated with a nonmagnetic layer sandwiched between them, the ferromagnetic layer has a composition represented by Cr 1-X Te X and the composition range is 0.5 ≦ x. A magnetoresistive material, wherein ≦ 0.8.
ｒ、Ｃｕ、Ａｕ、Ａｇ、Ａｌ2Ｏ3、およびＮｉＯの１種
または２種以上で構成される請求項１に記載の磁気抵抗
材料。2. In the magnetoresistive material, the nonmagnetic layer is C
The magnetoresistive material according to claim 1, which is composed of one or more of r, Cu, Au, Ag, Al 2 O 3 , and NiO.
ている請求項１または請求項２に記載の磁気抵抗材料。3. The magnetoresistive material according to claim 1, wherein an antiferromagnetic layer is laminated on one of the ferromagnetic layers.
種または２種で構成される請求項１〜請求項３のいずれ
かに記載の磁気抵抗材料。4. The antiferromagnetic layer is made of FeMn and NiO.
The magnetoresistive material according to any one of claims 1 to 3, wherein the magnetoresistive material is composed of one kind or two kinds.
性層の厚さが０．５〜３ｎｍである請求項１〜請求項４
のいずれかに記載の磁気抵抗材料。5. The ferromagnetic layer has a thickness of 0.8 to 4 nm, and the nonmagnetic layer has a thickness of 0.5 to 3 nm.
The magnetoresistive material according to any one of 1.
である請求項４に記載の磁気抵抗材料。6. The thickness of FeMn and NiO is 4 to 10 nm.
The magnetoresistive material according to claim 4, wherein
磁気抵抗材料を感磁部に用いた磁界センサ。7. A magnetic field sensor using the magnetoresistive material according to claim 1 in a magnetic sensing part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5231303A JPH0786034A (en) | 1993-09-17 | 1993-09-17 | Magnetoresistive material and electromagnetic sensor using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5231303A JPH0786034A (en) | 1993-09-17 | 1993-09-17 | Magnetoresistive material and electromagnetic sensor using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0786034A true JPH0786034A (en) | 1995-03-31 |
Family
ID=16921513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5231303A Pending JPH0786034A (en) | 1993-09-17 | 1993-09-17 | Magnetoresistive material and electromagnetic sensor using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786034A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1249426A1 (en) | 2001-04-13 | 2002-10-16 | Shibuya Kogyo Co., Ltd | Capping method and capping apparatus |
| US6874301B2 (en) | 2000-03-06 | 2005-04-05 | Shibuya Kogyo Co., Ltd. | Capping method and apparatus |
-
1993
- 1993-09-17 JP JP5231303A patent/JPH0786034A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6874301B2 (en) | 2000-03-06 | 2005-04-05 | Shibuya Kogyo Co., Ltd. | Capping method and apparatus |
| EP1249426A1 (en) | 2001-04-13 | 2002-10-16 | Shibuya Kogyo Co., Ltd | Capping method and capping apparatus |
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