JPH0785829A - Sample chamber imterior observation device of scanning electron microscope - Google Patents
Sample chamber imterior observation device of scanning electron microscopeInfo
- Publication number
- JPH0785829A JPH0785829A JP25357993A JP25357993A JPH0785829A JP H0785829 A JPH0785829 A JP H0785829A JP 25357993 A JP25357993 A JP 25357993A JP 25357993 A JP25357993 A JP 25357993A JP H0785829 A JPH0785829 A JP H0785829A
- Authority
- JP
- Japan
- Prior art keywords
- objective lens
- sample chamber
- electron beam
- electron
- electron microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は走査電子顕微鏡におい
て、本体および付属装置の性能を向上させる装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for improving the performance of a main body and an auxiliary device in a scanning electron microscope.
【０００２】[0002]
【従来の技術】従来の技術は、高真空状態に排気されて
いる走査電子顕微鏡の試料室を一旦大気圧にして、作業
者が歯科用ミラーなどを使用し肉眼でコールドフィンガ
ートラップの汚れ具合や対物レンズに付着した汚れの確
認，コールドフィンガートラップおよび反射電子検出器
など付属装置の電子ビーム通過孔と対物レンズの電子ビ
ーム通過孔との位置合わせを行っていた。そのため作業
が煩雑になるとともに高真空状態にある試料室を破壊し
た後、再排気するなど真空装置として後戻り作業となっ
ていた。また、試料室が小さい場合は更に困難な作業と
なっていた。2. Description of the Related Art In the prior art, the sample chamber of a scanning electron microscope, which has been evacuated to a high vacuum state, is once brought to atmospheric pressure, and an operator uses a dental mirror or the like to visually check the degree of contamination of a cold finger trap. The dirt attached to the objective lens was checked, and the electron beam passage hole of the accessory device such as the cold finger trap and the backscattered electron detector was aligned with the electron beam passage hole of the objective lens. Therefore, the work becomes complicated, and the sample chamber in a high vacuum state is destroyed, and then exhausted again, so that the vacuum device has to be returned to the work. Further, when the sample chamber is small, the work becomes more difficult.
【０００３】[0003]
【発明が解決しようとする課題】本発明は走査電子顕微
鏡の試料室内部観察装置において、試料室を真空に保持
した状態で試料室内部を対物レンズ下面方向からの観察
を可能にするものであり、試料室真空破壊による試料室
内部のガス吸着やゴミの混入を防止し、装置の性能向上
を目的としている。また、対物レンズの電子ビーム通過
孔とコールドフィンガートラップおよび反射電子検出器
の電子ビーム通過孔などを下方向から正しく見ることに
より正確な位置関係の調整が可能となり品質向上に貢献
するものである。SUMMARY OF THE INVENTION The present invention is an apparatus for observing the inside of a sample chamber of a scanning electron microscope, which makes it possible to observe the inside of the sample chamber from the lower surface of the objective lens while the sample chamber is held in vacuum. The purpose is to improve the performance of the device by preventing gas adsorption and dust mixture inside the sample chamber due to vacuum break in the sample chamber. Further, by accurately viewing the electron beam passage hole of the objective lens, the cold finger trap, the electron beam passage hole of the backscattered electron detector, and the like from the downward direction, it is possible to accurately adjust the positional relationship, which contributes to quality improvement.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に走査電子顕微鏡の試料室内に、絶縁材料で構成された
構造物を設け真空外からの操作によって対物レンズ下面
に挿入および引き出しが可能な構造とする。当該構造物
に、電子ビームを照射すると構造物が絶縁材で構成され
ているため、照射した電子ビームの電子が蓄積されて絶
縁材構造物の最表面に帯電する。その帯電現象によつ
て、絶縁材構造物表面から発生していた２次電子は、試
料内部にトラップされた状態となる。しかし、電子エネ
ルギーの大きな反射電子は絶縁材構造物の表面から真空
中へ放出され、対物レンズ下面や対物レンズ下面の下部
に配置されるコールドフィンガートラップおよび反射電
子検出器まで到達して、それらの表面で２次電子を励起
する。In order to achieve the above object, a structure made of an insulating material is provided in a sample chamber of a scanning electron microscope and can be inserted into and pulled out from the lower surface of an objective lens by an operation from outside the vacuum. The structure. When the structure is irradiated with an electron beam, the structure is made of an insulating material, and thus electrons of the irradiated electron beam are accumulated and charged on the outermost surface of the insulating material structure. Due to the charging phenomenon, the secondary electrons generated from the surface of the insulating material structure are trapped inside the sample. However, backscattered electrons with large electron energy are emitted into the vacuum from the surface of the insulating material structure, and reach the lower surface of the objective lens and the cold finger trap and the backscattered electron detector arranged under the lower surface of the objective lens, and their Exciting secondary electrons on the surface.
【０００５】励起された２次電子は走査電子顕微鏡の２
次電子検出器に印加されている高電圧（＋１０ｋＶ）の
電界によって検出器に導かれ、通常の試料観察用ＣＲＴ
に対物レンズ下面が映しだされる。そのため、試料室を
真空に保持した状態で対物レンズ下面の付着物の判別や
コールドフィンガートラップの汚れ具合の確認、またコ
ルドフィンガートラップおよび反射電子検出器の電子ビ
ーム通過孔と対物レンズの電子ビーム通過孔との位置合
わせなどが高精度で行える。The excited secondary electrons are 2 of the scanning electron microscope.
A high voltage (+10 kV) electric field applied to the secondary electron detector guides the detector to a normal sample observation CRT.
The lower surface of the objective lens is projected on. Therefore, while keeping the sample chamber in a vacuum, it is possible to determine the deposits on the lower surface of the objective lens and to check the degree of contamination of the cold finger trap, and to pass the electron beam passage hole of the cold finger trap and backscattered electron detector and the electron beam of the objective lens. Positioning with holes can be performed with high accuracy.
【０００６】[0006]
【作用】本発明による走査電子顕微鏡のレンズミラー装
置は絶縁材料で構成された構造物が対物レンズ下面に配
置可能なため、電子ビームの照射による帯電現象が反射
電子のみを真空中へ放出し、それが対物レンズ下面まで
到達して、対物レンズ下面の２次電子を励起する。その
２次電子は、走査電子顕微鏡の２次電子検出器に捉えら
れてＣＲＴに映しだされるため、試料室を高真空に保持
した状態で試料室内の情報が得られ走査電子顕微鏡の性
能劣化を防止できる。In the lens mirror device of the scanning electron microscope according to the present invention, since the structure made of the insulating material can be arranged on the lower surface of the objective lens, the charging phenomenon due to the irradiation of the electron beam releases only the reflected electrons into the vacuum, It reaches the lower surface of the objective lens and excites secondary electrons on the lower surface of the objective lens. Since the secondary electrons are captured by the secondary electron detector of the scanning electron microscope and reflected on the CRT, information in the sample chamber is obtained while the sample chamber is kept in a high vacuum, and the performance of the scanning electron microscope deteriorates. Can be prevented.
【０００７】[0007]
【実施例】以下、本発明の実施例を図面を用いて説明す
る。図１は走査電子顕微鏡の試料室内に配置されるコー
ルドフィンガートラップと本発明によるレンズミラー装
置およびや試料との関係を示したものである。尚、反射
電子検出器はコールドフィンガートラップと同一位置に
配置されるため省略してある。１は電子ビーム、２は対
物レンズ、３は対物レンズコイル、４は偏向コイル、５
は対物レンズ下面、６は対物レンズの電子ビーム通過
孔、７は試料室、８は２次電子検出器、９はコールドフ
ィンガートラップ、１０はコールドフィンガートラップ
の電子ビーム通過孔、１１は冷媒タンク、１２は冷媒注
入口、１３は液体窒素、１４はレンズミラー装置の絶縁
材構造物、１５はレンズミラー装置絶縁材構造物の保持
部材、１６はレンズミラー装置の操作つまみ、１７は試
料、１８は試料室の排気口である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the relationship between a cold finger trap arranged in a sample chamber of a scanning electron microscope, a lens mirror device according to the present invention, and a sample. The backscattered electron detector is omitted because it is arranged at the same position as the cold finger trap. 1 is an electron beam, 2 is an objective lens, 3 is an objective lens coil, 4 is a deflection coil, 5
Is a lower surface of the objective lens, 6 is an electron beam passage hole of the objective lens, 7 is a sample chamber, 8 is a secondary electron detector, 9 is a cold finger trap, 10 is an electron beam passage hole of the cold finger trap, 11 is a refrigerant tank, 12 is a refrigerant inlet, 13 is liquid nitrogen, 14 is an insulating material structure of the lens mirror device, 15 is a holding member of the lens mirror device insulating material structure, 16 is an operating knob of the lens mirror device, 17 is a sample, 18 is It is the exhaust port of the sample chamber.
【０００８】図２は本発明の実施例を示すもので１９は
レンズミラー装置絶縁材構造物の２次電子、２０は反射
電子、２１は対物レンズ下面の２次電子、２２は倍率可
変装置、２３は走査電源、２４はＣＲＴの偏向コイル、
２５は増幅器、２６は像観察用ＣＲＴである。図３およ
び図４は本発明によって得られた対物レンズ下面と反射
電子検出器の２次電子像で２７は反射電子検出器、２８
は反射電子検出器の電子ビーム通過孔である。FIG. 2 shows an embodiment of the present invention. 19 is a secondary electron of the insulating material structure of the lens mirror device, 20 is a reflected electron, 21 is a secondary electron on the lower surface of the objective lens, 22 is a variable magnification device, 23 is a scanning power source, 24 is a CRT deflection coil,
Reference numeral 25 is an amplifier, and 26 is an image observing CRT. 3 and 4 are secondary electron images of the lower surface of the objective lens and the backscattered electron detector obtained by the present invention, 27 is a backscattered electron detector, and 28 is a backscattered electron detector.
Is the electron beam passage hole of the backscattered electron detector.
【０００９】走査電子顕微鏡では、電子ビーム１が対物
レンズ２の対物レンズコイル３で試料１７の表面上に収
束して照射し、さらに偏向コイル４の磁場変化によりＸ
−Ｙの２次元走査する。走査範囲は、倍率可変装置２２
で制御され、像観察用ＣＲＴ２６の走査とＸ−Ｙの２次
元走査が走査電源２３によって同期している。対物レン
ズ２の直下にレンズミラー装置の絶縁材構造物１４を挿
入し、それに電子ビーム１を照射するとレンズミラー装
置の絶縁材構造物１４の表面からはレンズミラー装置絶
縁材構造物の２次電子１９が発生するが、電子ビーム１
の電子が蓄積され帯電電位が大きくなってレンズミラー
装置の絶縁材構造物１４から発生した２次電子１９は真
空中への脱出が不可能になる。しかし、エネルギーの高
い反射電子２０は真空中へ放出して対物レンズ下面５ま
で到達し、対物レンズ下面の２次電子１９を励起する。
励起された対物レンズ下面の２次電子２１は電子顕微鏡
の２次電子検出器８に印加されている高電圧（＋１０ｋ
Ｖ）の電界によって２次電子検出器８に検出され、増幅
器２５で信号が増幅されて像観察用ＣＲＴ２６に対物レ
ンズ下面５が映し出される。そのため、対物レンズ２の
下部に配置されるコールドフィンガートラップ９や反射
電子検出器２７の形状や位置関係も像観察用ＣＲＴ２６
に表示可能となって、コールドフィンガートラップ９の
汚れ状態やコールドフィンガートラップの電子ビーム通
過孔１０および反射電子検出器の電子ビーム通過孔２８
と対物レンズの電子ビーム通過孔６との正確な位置合わ
せが可能となる。In the scanning electron microscope, the electron beam 1 is converged on the surface of the sample 17 by the objective lens coil 3 of the objective lens 2 and irradiated, and the X-axis is changed by the change of the magnetic field of the deflection coil 4.
-Two-dimensional Y scanning. The scanning range is the magnification changing device 22.
The scanning power supply 23 synchronizes the scanning of the image observing CRT 26 and the two-dimensional scanning of XY. When the insulating material structure 14 of the lens mirror device is inserted immediately below the objective lens 2 and the electron beam 1 is irradiated onto it, the secondary electron of the insulating material structure of the lens mirror device is seen from the surface of the insulating material structure 14 of the lens mirror device. 19 is generated, but electron beam 1
Secondary electrons 19 generated from the insulating material structure 14 of the lens mirror device become unable to escape into the vacuum. However, the reflected electrons 20 having high energy are emitted into the vacuum and reach the lower surface 5 of the objective lens to excite the secondary electrons 19 on the lower surface of the objective lens.
The excited secondary electron 21 on the lower surface of the objective lens is a high voltage (+10 k) applied to the secondary electron detector 8 of the electron microscope.
The electric field of V) detects the secondary electron detector 8, the signal is amplified by the amplifier 25, and the lower surface 5 of the objective lens is projected on the CRT 26 for image observation. Therefore, the shape and the positional relationship of the cold finger trap 9 and the backscattered electron detector 27 arranged below the objective lens 2 are also related to the image observation CRT 26.
Can be displayed on the screen of the cold finger trap 9, the electron beam passage hole 10 of the cold finger trap and the electron beam passage hole 28 of the backscattered electron detector.
It is possible to perform accurate alignment between the electron beam passage hole 6 of the objective lens and the objective lens.
【００１０】[0010]
【発明の効果】本発明では、走査電子顕微鏡の試料室を
高真空に保った状態で対物レンズ下面の観察が可能なた
め、試料室の真空破壊による性能の低下が防止でき、且
つ対物レンズ下面に配置されるコールドフィンガートラ
ップや反射電子検出器の電子ビーム通過孔と対物レンズ
の電子ビーム通過孔との正確な位置合わせが行え作業が
容易になる。According to the present invention, since the lower surface of the objective lens can be observed while the sample chamber of the scanning electron microscope is kept in a high vacuum, it is possible to prevent the deterioration of the performance due to the vacuum break of the sample chamber, and the lower surface of the objective lens. The work can be facilitated by accurately aligning the electron beam passage hole of the cold finger trap or the backscattered electron detector arranged in the position with the electron beam passage hole of the objective lens.
【図１】走査電子顕微鏡の電子ビームと対物レンズおよ
びコールドフィンガートラップと本発明によるレンズミ
ラー装置，試料との関係を示す図である。FIG. 1 is a diagram showing a relationship among an electron beam of a scanning electron microscope, an objective lens, a cold finger trap, a lens mirror device according to the present invention, and a sample.
【図２】本発明の実施例を示す図である。FIG. 2 is a diagram showing an example of the present invention.
【図３】本発明によって得られた対物レンズ下面の２次
電子像を示す図である。FIG. 3 is a diagram showing a secondary electron image of the lower surface of the objective lens obtained by the present invention.
【図４】本発明によって得られた対物レンズ下面とその
下部に配置される反射電子検出器の２次電子像を示す図
である。FIG. 4 is a diagram showing secondary electron images of a back surface of an objective lens obtained by the present invention and a backscattered electron detector arranged below the objective lens.
１…電子ビーム、２…対物レンズ、３…対物レンズコイ
ル、４…偏向コイル、５…対物レンズ下面、６…対物レ
ンズの電子ビーム通過孔、７…試料室、８…２次電子検
出器、９…コールドフィンガートラップ、１０…コール
ドフィンガートラップの電子ビーム通過孔、１１…冷媒
タンク、１２…冷媒注入口、１３…液体窒素、１４…レ
ンズミラー装置の絶縁材構造物、１５…レンズミラー装
置絶縁材構造物の保持部材、１６…レンズミラー装置の
操作つまみ、１７…試料、１８…試料室の排気口、１９
…絶縁材構造物の２次電子、２０…反射電子、２１…対
物レンズ下面の２次電子、２２…倍率可変装置、２３…
走査電源、２４…ＣＲＴの偏向コイル、２５…増幅器、
２６…像観察用ＣＲＴ、２７…反射電子検出器、２８…
反射電子検出器の電子ビーム通過孔。DESCRIPTION OF SYMBOLS 1 ... Electron beam, 2 ... Objective lens, 3 ... Objective lens coil, 4 ... Deflection coil, 5 ... Objective lens lower surface, 6 ... Electron beam passage hole of an objective lens, 7 ... Sample chamber, 8 ... Secondary electron detector, 9 ... Cold finger trap, 10 ... Electron beam passage hole of cold finger trap, 11 ... Refrigerant tank, 12 ... Refrigerant injection port, 13 ... Liquid nitrogen, 14 ... Insulating material structure of lens mirror device, 15 ... Insulation of lens mirror device Holding member for material structure, 16 ... operating knob of lens mirror device, 17 ... sample, 18 ... exhaust port of sample chamber, 19
... Secondary electrons of insulating material structure, 20 ... Reflected electrons, 21 ... Secondary electrons on lower surface of objective lens, 22 ... Magnification variable device, 23 ...
Scanning power source, 24 ... CRT deflection coil, 25 ... Amplifier,
26 ... CRT for image observation, 27 ... Backscattered electron detector, 28 ...
Electron beam passage hole of backscattered electron detector.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成６年５月１１日[Submission date] May 11, 1994
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief description of the drawing
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図１】走査電子顕微鏡の電子ビームと対物レンズおよ
びコールドフィンガートラップと本発明によるレンズミ
ラー装置，試料との関係を示す図である。FIG. 1 is a diagram showing a relationship among an electron beam of a scanning electron microscope, an objective lens, a cold finger trap, a lens mirror device according to the present invention, and a sample.
【図２】本発明の実施例を示す図である。FIG. 2 is a diagram showing an example of the present invention.
【図３】本発明によって得られた対物レンズ下面の２次
電子像の顕微鏡写真である。FIG. 3 is a micrograph of a secondary electron image of the lower surface of the objective lens obtained by the present invention.
【図４】本発明によって得られた対物レンズ下面とその
下部に配置される反射電子検出器による２次電子像の顕
微鏡写真である。[4] the sensible secondary electron image by reflected electron detector arranged resulting objective lens lower surface and thereunder the present invention
It is a microscopic photograph .
【符号の説明】 １…電子ビーム、２…対物レンズ、３…対物レンズコイ
ル、４…偏向コイル、５…対物レンズ下面、６…対物レ
ンズの電子ビーム通過孔、７…試料室、８…２次電子検
出器、９…コールドフィンガートラップ、１０…コール
ドフィンガートラップの電子ビーム通過孔、１１…冷媒
タンク、１２…冷媒注入口、１３…液体窒素、１４…レ
ンズミラー装置の絶縁材構造物、１５…レンズミラー装
置絶縁材構造物の保持部材、１６…レンズミラー装置の
操作つまみ、１７…試料、１８…試料室の排気口、１９
…絶縁材構造物の２次電子、２０…反射電子、２１…対
物レンズ下面の２次電子、２２…倍率可変装置、２３…
走査電源、２４…ＣＲＴの偏向コイル、２５…増幅器、
２６…像観察用ＣＲＴ、２７…反射電子検出器、２８…
反射電子検出器の電子ビーム通過孔。[Description of Reference Signs] 1 ... Electron beam, 2 ... Objective lens, 3 ... Objective lens coil, 4 ... Deflection coil, 5 ... Objective lens lower surface, 6 ... Electron beam passage hole of objective lens, 7 ... Sample chamber, 8 ... 2 Secondary electron detector, 9 ... Cold finger trap, 10 ... Electron beam passage hole of cold finger trap, 11 ... Refrigerant tank, 12 ... Refrigerant inlet, 13 ... Liquid nitrogen, 14 ... Insulating material structure of lens mirror device, 15 ... Lens mirror device insulating member holding member, 16 ... Lens mirror device operating knob, 17 ... Sample, 18 ... Sample chamber exhaust port, 19
... Secondary electrons of insulating material structure, 20 ... Reflected electrons, 21 ... Secondary electrons on lower surface of objective lens, 22 ... Magnification variable device, 23 ...
Scanning power source, 24 ... CRT deflection coil, 25 ... Amplifier,
26 ... CRT for image observation, 27 ... Backscattered electron detector, 28 ...
Electron beam passage hole of backscattered electron detector.
Claims (1)
持したまま観察する手法において、絶縁材料で構成され
た構造物を対物レンズ下部に配し、本体の有する電子ビ
ーム照射機能により試料室内壁において電子ビーム照射
を行い帯電現象を誘発させ、これによって発生した反射
電子により励起された２次電子を検出して試料室内部を
下面方向から観察できる事を特徴とする走査電子顕微鏡
の試料室内部観察装置。1. In a method of observing the inside of a sample chamber of a scanning electron microscope while maintaining a high vacuum, a structure made of an insulating material is arranged below an objective lens, and the sample chamber is provided by an electron beam irradiation function of the main body. A sample chamber of a scanning electron microscope, which is capable of observing the inside of the sample chamber from the lower side by irradiating an electron beam on the wall to induce a charging phenomenon and detecting secondary electrons excited by the reflected electrons generated thereby. Internal observation device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25357993A JPH0785829A (en) | 1993-09-17 | 1993-09-17 | Sample chamber imterior observation device of scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25357993A JPH0785829A (en) | 1993-09-17 | 1993-09-17 | Sample chamber imterior observation device of scanning electron microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0785829A true JPH0785829A (en) | 1995-03-31 |
Family
ID=17253342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25357993A Pending JPH0785829A (en) | 1993-09-17 | 1993-09-17 | Sample chamber imterior observation device of scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0785829A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100643732B1 (en) * | 2005-05-09 | 2006-11-10 | 리 빙-환 | Method of operating high-pressure chamber in vacuum or low-pressure environment and observation of the operation and device for the operation and the observation |
-
1993
- 1993-09-17 JP JP25357993A patent/JPH0785829A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100643732B1 (en) * | 2005-05-09 | 2006-11-10 | 리 빙-환 | Method of operating high-pressure chamber in vacuum or low-pressure environment and observation of the operation and device for the operation and the observation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3441955B2 (en) | Projection type charged particle microscope and substrate inspection system | |
| JP2851213B2 (en) | Scanning electron microscope | |
| US7582885B2 (en) | Charged particle beam apparatus | |
| TWI373791B (en) | Proximity deposition | |
| JP2927627B2 (en) | Scanning electron microscope | |
| US7745785B2 (en) | Sample inspection method, sample inspection apparatus, and sample holder | |
| JPH09171791A (en) | Scanning type electron microscope | |
| US10622187B2 (en) | Charged particle beam apparatus and sample processing observation method | |
| JP2001176440A (en) | Ion beam equipment and auger microprobe | |
| JP2842083B2 (en) | Sample holder, sample processing observation system using the same, sample observation method, transmission electron microscope, and ion beam device | |
| JPH0785829A (en) | Sample chamber imterior observation device of scanning electron microscope | |
| JP2001148232A (en) | Scanning electron microscope | |
| JPH05251028A (en) | Electron microscope provided with x-ray analyzer | |
| JP3132796B2 (en) | Method for observing semiconductor device and scanning electron microscope used therefor | |
| JPH10106466A (en) | Magnetic field type objective electron lens | |
| JP3494152B2 (en) | Scanning electron microscope | |
| JP4192290B2 (en) | Charged particle beam projection optical system and adjustment method thereof | |
| JP4146103B2 (en) | Electron beam apparatus equipped with a field emission electron gun | |
| JP3014986B2 (en) | Scanning electron microscope | |
| JPS63274049A (en) | Scanning type electron microscope | |
| JP2001006605A (en) | Focusing ion beam processing device and processing method for specimen using focusing ion beam | |
| JP3219030B2 (en) | Sample image display method and semiconductor manufacturing method using the display method | |
| KR100239754B1 (en) | Alignment position in sem | |
| JP3524737B2 (en) | Electron gun and electron beam device | |
| JP3062492B2 (en) | Scanning electron microscope |