JPH0775453B2 - Surge absorber for communication line - Google Patents
Surge absorber for communication lineInfo
- Publication number
- JPH0775453B2 JPH0775453B2 JP3083148A JP8314891A JPH0775453B2 JP H0775453 B2 JPH0775453 B2 JP H0775453B2 JP 3083148 A JP3083148 A JP 3083148A JP 8314891 A JP8314891 A JP 8314891A JP H0775453 B2 JPH0775453 B2 JP H0775453B2
- Authority
- JP
- Japan
- Prior art keywords
- surge
- pieces
- surge absorber
- absorbing element
- absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Thermally Actuated Switches (AREA)
- Protection Of Static Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は電話機、ファクシミリ、
電話交換機、モデム等の通信機器用の電子部品に適する
サージ吸収器に関する。更に詳しくは通信回線等から侵
入してくる雷サージから通信機器を保護するために用い
られる半導体型サージ吸収素子を備えたサージ吸収器に
関するものである。The present invention relates to a telephone, a facsimile,
The present invention relates to a surge absorber suitable for electronic components for communication equipment such as telephone exchanges and modems. More specifically, the present invention relates to a surge absorber provided with a semiconductor type surge absorbing element used to protect communication equipment from a lightning surge entering from a communication line or the like.
【０００２】[0002]
【従来の技術】サージ吸収素子には、主として酸化亜鉛
バリスタ、炭化けい素バリスタ、ツェナダイオード等の
半導体型サージ吸収素子と、エアギャップ式放電管、マ
イクロギャップ式放電管等のギャップ型サージ吸収素子
とがある。ギャップ型サージ吸収素子は半導体型サージ
吸収素子に比べて大きなサージ電流を流すことができ、
半導体型サージ吸収素子はギャップ型サージ吸収素子に
比べて動作電圧に遅れを生じない特長がある。2. Description of the Related Art Surge absorbers are mainly semiconductor type surge absorbers such as zinc oxide varistor, silicon carbide varistor and Zener diode, and gap type surge absorbers such as air gap type discharge tubes and micro gap type discharge tubes. There is. The gap type surge absorber can pass a larger surge current than the semiconductor type surge absorber,
The semiconductor-type surge absorption element has a feature that the operating voltage is not delayed compared to the gap-type surge absorption element.
【０００３】[0003]
【発明が解決しようとする課題】しかし、半導体型サー
ジ吸収素子はギャップ型サージ吸収素子に比べて大きな
サージ電流が侵入すると特性が劣化したり破壊する欠点
がある。これは半導体型サージ吸収素子がギャップ型サ
ージ吸収素子に比べて大きな抵抗値を有しており、サー
ジ吸収時に発熱量が大きくなって熱的損傷を受けるため
である。特に酸化亜鉛バリスタにおいてはサージが印加
された直後に高い残留電圧が発生し、その特性の劣化や
破壊の主な原因になっている。またこの残留電圧はサー
ジ吸収素子の後段に接続される回路に印加され、通信機
器に悪影響を与える問題点があった。However, the semiconductor type surge absorbing element has a drawback that its characteristics are deteriorated or destroyed when a large surge current enters, as compared with the gap type surge absorbing element. This is because the semiconductor type surge absorbing element has a larger resistance value than the gap type surge absorbing element, and the amount of heat generated during the surge absorption is large and the element is thermally damaged. Particularly in a zinc oxide varistor, a high residual voltage is generated immediately after a surge is applied, which is a main cause of deterioration and destruction of its characteristics. Further, this residual voltage is applied to a circuit connected to the subsequent stage of the surge absorbing element, which adversely affects communication equipment.
【０００４】本発明の目的は、雷サージを吸収すること
に加えて、半導体型サージ吸収素子の熱的損傷による特
性劣化を防止し、しかもサージ吸収時の残留電圧を低減
して周辺の電子機器を保護する通信回線用サージ吸収器
を提供することにある。本発明の別の目的は、熱応動片
が熱変形している間、アークによる発熱を防止する通信
回線用サージ吸収器を提供することにある。 It is an object of the present invention to absorb lightning surges, prevent characteristic deterioration due to thermal damage of a semiconductor type surge absorbing element, and reduce residual voltage at the time of surge absorption to reduce peripheral electronic equipment. It is to provide a surge absorber for communication lines that protects the Another object of the present invention is to provide a thermally responsive piece.
Communication that prevents heat generation due to arc while it is thermally deformed
It is to provide a surge absorber for lines.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、大サージ
電流吸収時の半導体型サージ吸収素子の抵抗値を小さく
し、残留電圧を低減すれば、上記目的を達成できること
に着目し、本発明に到達した。本発明のサージ吸収器
は、図１に示すように加熱により閉じ冷却により開く熱
応動スイッチ１４と半導体型サージ吸収素子１６とが並
列に接続された通信用サージ吸収器１３である。その特
徴ある構成は、スイッチ１４が互いに向合う一対の導電
性熱応動片１７，１８を有し、熱応動片１７，１８の各
基端が絶縁材１９を介して互いに接着され、これらの基
端にリード線２１，２２がそれぞれ接続され、熱応動片
１７，１８の各先端に可動接点１７ａ，１８ａが配設さ
れ、かつサージ吸収素子１６が一対のバイメタル又は形
状記憶合金からなる熱応動片１７，１８の先端近傍にリ
ード線２５，２６を介して接続され、これらの熱応動片
１７，１８とリード線２５，２６の間に可動接点の動き
に追従可能な導電性ばね片２３，２４が介装されたこと
にある。The inventors of the present invention have noticed that the above object can be achieved by reducing the resistance value of the semiconductor type surge absorbing element at the time of absorbing a large surge current and reducing the residual voltage. The invention was reached. As shown in FIG. 1, the surge absorber of the present invention is a communication surge absorber 13 in which a thermally responsive switch 14 that is closed by heating and opened by cooling and a semiconductor type surge absorbing element 16 are connected in parallel. The characteristic configuration is that the switch 14 has a pair of electrically conductive thermal reaction pieces 17, 18 facing each other, and the respective base ends of the thermal reaction pieces 17, 18 are adhered to each other via an insulating material 19, and Lead wires 21 and 22 are respectively connected to the ends, movable contacts 17a and 18a are arranged at the respective ends of the heat responsive pieces 17 and 18, and the surge absorbing element 16 includes a pair of bimetals or shapes.
In the vicinity of the tip of the thermally responsive element 17, 18 made of Jo memory alloy is connected through a lead wire 25, these thermally responsive member
Movement of movable contact between 17 , 18 and lead wires 25, 26
That is , the conductive spring pieces 23 , 24 capable of following the above are inserted .
【０００６】[0006]
【作用】サージ電圧の印加時には熱応動スイッチ１４を
介してサージ吸収素子１６に電流が流れ通信機器を保護
する。印加直後に熱応動片１７，１８自体の抵抗により
熱応動片１７，１８が発熱し可動接点１７ａ，１８ａを
閉じてバイパス回路が形成され、サージ吸収素子１６へ
のサージ電流の侵入を抑える。サージ電圧が印加されな
くなり熱応動片１７，１８が冷却すれば熱応動スイッチ
１４はオープン状態に戻る。特に、熱応動片１７，１８
が熱変形している間、リード線２５，２６が塑性変形し
たり或いは熱応動片１７，１８から離れてアークを生じ
ないように、導電性ばね片２３，２４は可動接点１７
ａ，１８ａの動きに追従して熱応動片１７，１８とリー
ド線２５，２６とを絶えず電気的に接続するように作用
する。 When a surge voltage is applied, a current flows through the surge absorbing element 16 via the heat responsive switch 14 to protect communication equipment. Immediately after the application, the thermal reaction pieces 17, 18 generate heat due to the resistance of the thermal reaction pieces 17, 18 themselves, and the movable contacts 17a, 18a are closed to form a bypass circuit, thereby suppressing the surge current from entering the surge absorbing element 16. When the surge response voltage is not applied and the heat responsive pieces 17, 18 are cooled, the heat responsive switch 14 returns to the open state. In particular, the thermal reaction pieces 17, 18
The lead wires 25 and 26 are plastically deformed while the
Or, an arc is generated away from the heat-actuated pieces 17, 18.
So that the conductive spring pieces 23, 24 do not move.
a, 18a and the thermal reaction pieces 17, 18 and Lee
Acts to constantly electrically connect the lead wires 25 and 26.
To do.
【０００７】次に本発明の一実施例を図面に基づいて詳
しく説明する。 ＜実施例＞図１及び図２に示すように、通信機器の電子
部品１０の一対の入力線路１１，１２には電子部品１０
に並列にサージ吸収器１３が接続される。サージ吸収器
１３は加熱により閉じ冷却により開く熱応動スイッチ１
４と半導体型サージ吸収素子１６とを備える。この例で
は、熱応動スイッチ１４はバイメタルスイッチであり、
サージ吸収素子１６は放電開始電圧２７０Ｖ（公称）の
酸化亜鉛バリスタである。熱応動スイッチ１４は一対の
導電性のバイメタル片１７，１８を有する。バイメタル
片１７，１８はそれぞれ外層がＦｅ−Ｎｉ合金の高膨張
体からなり、内層がインバー合金の低膨張体からなる。
バイメタル片１７，１８は基端がアルミナからなる絶縁
材１９を介して互いに接着され、先端に可動接点１７
ａ，１８ａが配設される。バイメタル片１７，１８の各
基端にはリード線２１，２２を介して前記入力線路１
１，１２が接続される。一対のバイメタル片１７，１８
の各先端近傍にはりん青銅からなる導電性ばね片２３，
２４の各一端が圧接され、ばね片２３，２４の各他端に
はリード線２５，２６を介してサージ吸収素子１６が接
続される。ばね片２３，２４の各一端をバイメタル片１
７，１８に固着しないのは、バイメタル片１７，１８の
動作速度を速めるためである。ばね片２３，２４は前記
可動接点１７ａ，１８ａの動きに追従してバイメタル片
１７，１８とリード線２５，２６とを絶えず電気的に接
続するように作用する。Next, an embodiment of the present invention will be described in detail with reference to the drawings. <Embodiment> As shown in FIGS. 1 and 2, the electronic component 10 is connected to the pair of input lines 11 and 12 of the electronic component 10 of the communication device.
The surge absorber 13 is connected in parallel with. The surge absorber 13 is a thermal response switch 1 that is closed by heating and opened by cooling.
4 and a semiconductor type surge absorbing element 16. In this example, the thermal switch 14 is a bimetal switch,
The surge absorbing element 16 is a zinc oxide varistor having a discharge starting voltage of 270 V (nominal). The thermal switch 14 has a pair of conductive bimetal pieces 17 and 18. The bimetal pieces 17 and 18 each have an outer layer made of a high expansion body of Fe—Ni alloy and an inner layer made of a low expansion body of Invar alloy.
The bimetal pieces 17 and 18 are adhered to each other via an insulating material 19 having a base end made of alumina, and the movable contact 17 is attached to the front end.
a and 18a are provided. The input line 1 is connected to the base ends of the bimetal pieces 17 and 18 via lead wires 21 and 22.
1, 12 are connected. A pair of bimetal pieces 17, 18
Near the tip of each of the conductive spring pieces 23 made of phosphor bronze,
One end of 24 is pressure-contacted, and the surge absorbing element 16 is connected to the other ends of the spring pieces 23, 24 via lead wires 25, 26. Attach one end of each of the spring pieces 23, 24 to the bimetal piece 1.
The reason why they are not fixed to 7, 18 is to increase the operating speed of the bimetal pieces 17, 18. The spring pieces 23 and 24 follow the movements of the movable contacts 17a and 18a, and act to constantly electrically connect the bimetal pieces 17 and 18 and the lead wires 25 and 26.
【０００８】このような構成のサージ吸収器１３では、
入力線路１１，１２間に雷サージが侵入すると、リード
線２１、バイメタル片１７、ばね片２３、リード線２
５、サージ吸収素子１６、リード線２６、ばね片２４、
バイメタル片１８、リード線２２の回路に電流が流れ、
サージ吸収器１３の後段に並列接続された電子部品１０
を雷サージから保護する。この電流が流れると瞬時にバ
イメタル片１７，１８がバイメタル片自体の抵抗により
発熱し熱変形する。その結果、可動接点１７ａ，１８ａ
が接触又は接近してアークを発生することにより、リー
ド線２１、バイメタル片１７、可動接点１７ａ、可動接
点１８ａ、バイメタル片１８、リード線２２のバイパス
回路に電流が流れ、サージ吸収素子１６へのサージ電流
の侵入が抑制される。バイメタル片１７，１８が熱変形
している間、リード線２５，２６が塑性変形したり或い
はバイメタル片１７，１８から離れてアークを生じない
ように、ばね片２３，２４はバイメタル片１７，１８と
接触を続ける。サージが侵入しなくなれば、バイメタル
片１７，１８が冷えて復元し、スイッチ１４は再びオー
プン状態に戻る。In the surge absorber 13 having such a structure,
When a lightning surge enters between the input lines 11 and 12, the lead wire 21, the bimetal piece 17, the spring piece 23, and the lead wire 2
5, surge absorber 16, lead wire 26, spring piece 24,
Current flows in the circuit of the bimetal piece 18 and the lead wire 22,
Electronic component 10 connected in parallel after surge absorber 13
Protects against lightning surges. When this current flows, the bimetal pieces 17, 18 instantly generate heat due to the resistance of the bimetal pieces themselves and are thermally deformed. As a result, the movable contacts 17a, 18a
Contact with or approach each other to generate an arc, whereby a current flows through the bypass circuit of the lead wire 21, the bimetal piece 17, the movable contact 17a, the movable contact 18a, the bimetal piece 18, and the lead wire 22, and the surge absorption element 16 Intrusion of surge current is suppressed. While the bimetal pieces 17, 18 are thermally deformed, the spring pieces 23, 24 are made of bimetal pieces 17, 18 so that the lead wires 25, 26 do not plastically deform or arc away from the bimetal pieces 17, 18. Keep in touch with. When the surge stops, the bimetal pieces 17 and 18 are cooled and restored, and the switch 14 returns to the open state.
【０００９】＜サージ印加試験とその結果＞実施例の酸
化亜鉛バリスタで構成された半導体型サージ吸収素子１
６のみからなるサージ吸収器３０を比較例として、この
サージ吸収器３０と実施例のサージ吸収器１３について
次のサージ印加試験を行った。疑似サージとして、
（１．２×５０）μｓｅｃ−１０ｋＶの電圧サージと、
（８×２０）μｓｅｃ−３ｋＡの電流サージを用い
た。<Surge Application Test and Results> A semiconductor type surge absorber 1 composed of the zinc oxide varistor of the embodiment.
The following surge application test was performed on this surge absorber 30 and the surge absorber 13 of the example, using the surge absorber 30 composed of 6 only as a comparative example. As a pseudo surge,
A voltage surge of (1.2 × 50) μsec−10 kV,
A current surge of (8 × 20) μsec-3 kA was used.
【００１０】の電圧サージを実施例のサージ吸収器１
３に印加したときのサージ吸収波形図を図３に示し、比
較例のサージ吸収器３０に印加したときのサージ吸収波
形図を図４に示す。図４に示すように、比較例のサージ
吸収器３０ではサージ電圧印加後、約４００μｓｅｃま
で残留電圧が発生し、特に約２００μｓｅｃまで約２０
０〜１５０Ｖの残留電圧が発生した。これに対して図３
に示すように、実施例のサージ吸収器１３ではサージ電
圧を印加した直後に比較例と同様に約２５０Ｖの残留電
圧を生じたが、約２μｓｅｃで残留電圧は吸収された。
これにより、実施例のサージ吸収器では残留電圧を効率
良く低減し得ることが判明した。実施例のサージ吸収器
で約２００μｓｅｃ経過後、約５０Ｖの残留電圧が生じ
たが、バイメタル片の復帰によるものと考えられる。The voltage surge of 1 is used as the surge absorber 1 of the embodiment.
3 shows a surge absorption waveform diagram when applied to No. 3, and FIG. 4 shows a surge absorption waveform diagram when applied to the surge absorber 30 of the comparative example. As shown in FIG. 4, in the surge absorber 30 of the comparative example, a residual voltage is generated up to about 400 μsec after the surge voltage is applied, and especially about 20 μsec to about 20 μsec.
A residual voltage of 0 to 150 V was generated. On the other hand, Fig. 3
As shown in FIG. 6, in the surge absorber 13 of the example, a residual voltage of about 250 V was generated immediately after applying the surge voltage as in the comparative example, but the residual voltage was absorbed in about 2 μsec.
From this, it was found that the surge absorber of the example can efficiently reduce the residual voltage. A residual voltage of about 50 V was generated after a lapse of about 200 μsec in the surge absorber of the example, which is considered to be due to the recovery of the bimetal piece.
【００１１】の電流サージを実施例のサージ吸収器１
３及び比較例のサージ吸収器３０に印加したときの直流
放電開始電圧Ｖs及びこのサージを印加する前の直流放
電開始電圧Ｖsをそれぞれカーブトレーサにより測定し
た。また印加後のサージ吸収素子であるバリスタの発熱
の有無を調べた。その結果を表１に示す。The current surge of the surge absorber 1 of the embodiment
3 and the DC discharge starting voltage Vs when applied to the surge absorber 30 of the comparative example and the DC discharge starting voltage Vs before applying the surge were measured by the curve tracer. In addition, the presence or absence of heat generation in the varistor, which is the surge absorbing element after application, was examined. The results are shown in Table 1.
【００１２】[0012]
【表１】 [Table 1]
【００１３】表１から、の電流サージを印加前では両
サージ吸収器１３，３０とも直流放電開始電圧Ｖsが２
９０Ｖであったものが、電流サージ印加後、比較例のサ
ージ吸収器３０がバリスタの発熱により２５０Ｖに低下
したのに対して、実施例のサージ吸収器１３は２９０Ｖ
と変わらなかった。これにより、実施例のサージ吸収器
は電流サージに起因してバリスタの特性が劣化しないこ
とが判った。From Table 1, the DC discharge starting voltage Vs of both surge absorbers 13 and 30 is 2 before the current surge is applied.
The voltage of 90V was lowered to 250V by the heat generation of the varistor after the current surge was applied to the surge absorber 30 of the comparative example, while the surge absorber 13 of the example was 290V.
Did not change. From this, it was found that the surge absorber of the example did not deteriorate the characteristics of the varistor due to the current surge.
【００１４】なお、上記実施例では半導体型サージ吸収
素子として、酸化亜鉛バリスタを示したが、炭化けい素
バリスタ、ツェナダイオード等の半導体型サージ吸収素
子を用いてもよい。また、熱応動スイッチとして、バイ
メタルスイッチを示したが、形状記憶合金からなるスイ
ッチでもよい。Although the zinc oxide varistor is shown as the semiconductor type surge absorbing element in the above embodiment, a semiconductor type surge absorbing element such as a silicon carbide varistor or a Zener diode may be used. Although the bimetal switch is shown as the heat-responsive switch, a switch made of a shape memory alloy may be used.
【００１５】[0015]
【発明の効果】以上述べたように、本発明のサージ吸収
器は加熱により閉じ冷却により開く熱応動スイッチと半
導体型サージ吸収素子とを並列に接続したので、雷サー
ジが侵入したときにサージ吸収素子がこれを吸収し、更
に熱応動スイッチが作動してバイパス回路が形成されサ
ージ吸収素子へのサージ電流が抑制される。これにより
サージ吸収素子の発熱が防止され、特性の劣化や熱的破
壊を大幅に減少できる。またサージ吸収時の残留電圧を
低減して、周辺の電子部品をより一層保護することがで
きる。特に、熱応動片が熱変形している間、リード線が
塑性変形したり或いは熱応動片から離れてアークを生じ
ないように、導電性ばね片は可動接点の動きに追従して
熱応動片とリード線とを絶えず電気的に接続するように
作用するため、アークによる発熱が防止され上記効果が
より顕著に発揮される。 As described above, in the surge absorber of the present invention, the thermal response switch which is closed by heating and opened by cooling and the semiconductor type surge absorbing element are connected in parallel. The element absorbs the heat, and the thermal switch operates to form a bypass circuit to suppress the surge current to the surge absorbing element. As a result, heat generation of the surge absorber is prevented, and deterioration of characteristics and thermal destruction can be greatly reduced. Further, the residual voltage at the time of absorbing the surge can be reduced to further protect the peripheral electronic components. In particular, the lead wire is
Plastic deformation or arcing away from the thermal
So that the conductive spring piece follows the movement of the moving contact.
As the thermal response piece and the lead wire are constantly electrically connected
Since it works, the heat generated by the arc is prevented and the above effects are
It is more prominent.
【図１】本発明実施例のサージ吸収器の構成図。FIG. 1 is a configuration diagram of a surge absorber according to an embodiment of the present invention.
【図２】本発明実施例のサージ吸収回路の構成図。FIG. 2 is a configuration diagram of a surge absorbing circuit according to an embodiment of the present invention.
【図３】本発明実施例のサージ吸収器のサージ吸収波形
図。FIG. 3 is a surge absorption waveform diagram of the surge absorber according to the embodiment of the present invention.
【図４】比較例のサージ吸収器のサージ吸収波形図。FIG. 4 is a surge absorption waveform diagram of a surge absorber of a comparative example.
１３ サージ吸収器 １４ 熱応動スイッチ １６ 半導体型サージ吸収素子 １７，１８ バイメタル片（熱応動片） １７ａ，１８ａ 可動接点 １９ 絶縁材 ２１，２２，２５，２６ リード線 ２３，２４ 導電性ばね片 13 Surge Absorber 14 Thermal Response Switch 16 Semiconductor Type Surge Absorption Element 17,18 Bimetal Piece (Thermal Response Piece) 17a, 18a Movable Contact 19 Insulating Material 21, 22, 25, 26 Lead Wire 23, 24 Conductive Spring Piece
───────────────────────────────────────────────────── フロントページの続き (72)発明者 阿部 政利 埼玉県秩父郡横瀬町大字横瀬2270番地 三 菱マテリアル株式会社 セラミックス研究 所内 (56)参考文献 特開 昭56−58738（ＪＰ，Ａ) 特開 昭57−116537（ＪＰ，Ａ) 実開 昭60−5039（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masatoshi Abe 2270 Yokose, Yokoze-cho, Chichibu-gun, Saitama Sanryo Materials Co., Ltd. Ceramics Research Laboratory (56) Reference JP-A-56-58738 (JP, A) Sho 57-116537 (JP, A) Actually opened Sho 60-5039 (JP, U)
Claims (1)
イッチ(14)と半導体型サージ吸収素子(16)とが並列に接
続された通信回線用サージ吸収器(13)であって、 前記スイッチ(14)は互いに向合う一対の導電性熱応動片
(17,18)を有し、前記熱応動片(17,18)の各基端が絶縁材
(19)を介して互いに接着され、前記基端にリード線(21,
22)がそれぞれ接続され、前記熱応動片(17,18)の各先端
に可動接点(17a,18a)が配設され、 前記サージ吸収素子(16)は前記一対のバイメタル又は形
状記憶合金からなる熱応動片(17,18)の先端近傍にリー
ド線(25,26)を介して接続され、 前記一対の熱応動片(17,18)とリード線(25,26)の間に可
動接点の動きに追従可能な導電性ばね片(23,24)が介装
され た ことを特徴とする通信回線用サージ吸収器。1. A surge absorber (13) for a communication line, comprising a heat-responsive switch (14) closed by heating and opened by cooling and a semiconductor type surge absorbing element (16) connected in parallel. ) Is a pair of conductive thermal reaction pieces facing each other
(17, 18), and each base end of the thermal reaction piece (17, 18) is an insulating material.
(19) are bonded to each other via the lead wire (21,
22) are connected to each other, and movable contacts (17a, 18a) are arranged at the respective ends of the thermal responsive pieces (17, 18), and the surge absorbing element (16) is formed by the pair of bimetals or shapes.
It is connected via a lead wire (25, 26) to the vicinity of the tip of the heat responsive piece (17, 18) made of a shape memory alloy , and the pair of the heat responsive piece (17, 18) and the lead wire (25, 26) In between
The conductive spring pieces (23, 24) that can follow the movement of the moving contact are installed.
A surge absorber for communication lines that has been characterized.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3083148A JPH0775453B2 (en) | 1991-03-22 | 1991-03-22 | Surge absorber for communication line |
| US07/853,912 US5247273A (en) | 1991-03-22 | 1992-03-19 | Surge absorber for protection of communication equipment connected to communication lines |
| CA002063654A CA2063654C (en) | 1991-03-22 | 1992-03-20 | Surge absorber for protection of communication equipment connected to communication lines |
| KR1019920004704A KR960004665B1 (en) | 1991-03-22 | 1992-03-21 | Surge absorer for protecting telecommunication apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3083148A JPH0775453B2 (en) | 1991-03-22 | 1991-03-22 | Surge absorber for communication line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04295224A JPH04295224A (en) | 1992-10-20 |
| JPH0775453B2 true JPH0775453B2 (en) | 1995-08-09 |
Family
ID=13794143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3083148A Expired - Fee Related JPH0775453B2 (en) | 1991-03-22 | 1991-03-22 | Surge absorber for communication line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0775453B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2619066A (en) * | 2022-05-26 | 2023-11-29 | Eaton Intelligent Power Ltd | Overvoltage protection device with improved integrated overtemperature protection |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0026861A1 (en) * | 1979-10-03 | 1981-04-15 | Cerberus Ag | Arrangement for protection against overvoltage |
| NL8006411A (en) * | 1980-11-25 | 1982-06-16 | Philips Nv | DEVICE FOR PROTECTION AGAINST OVERHEATING BY OVERVOLTAGE OF A VOLTAGE LIMITING CIRCUIT. |
| JPS5896949A (en) * | 1981-12-03 | 1983-06-09 | Matsushita Electric Ind Co Ltd | Hot water supplying equipment utilizing solar heat |
-
1991
- 1991-03-22 JP JP3083148A patent/JPH0775453B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04295224A (en) | 1992-10-20 |
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|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
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