JPH077034A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH077034A
JPH077034A JP5147267A JP14726793A JPH077034A JP H077034 A JPH077034 A JP H077034A JP 5147267 A JP5147267 A JP 5147267A JP 14726793 A JP14726793 A JP 14726793A JP H077034 A JPH077034 A JP H077034A
Authority
JP
Japan
Prior art keywords
bonding
wire
capillary
lead
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5147267A
Other languages
Japanese (ja)
Inventor
Norio Ito
則夫 伊藤
Kenji Kobayashi
賢司 小林
Yuichi Asano
祐一 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Miyagi Electronics Ltd
Original Assignee
Fujitsu Miyagi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Miyagi Electronics Ltd filed Critical Fujitsu Miyagi Electronics Ltd
Priority to JP5147267A priority Critical patent/JPH077034A/en
Publication of JPH077034A publication Critical patent/JPH077034A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/788—Means for moving parts
    • H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/78822—Rotational mechanism
    • H01L2224/78823—Pivoting mechanism
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
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    • H01L2224/85205—Ultrasonic bonding
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    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To speed up bonding work with regards to a wire bonding method. CONSTITUTION:A wire 1 is vertically inserted into a capillary 11. When an area between two point is wired by performing a first bonding work and second binding work by moving this capillary 11, the first bonding work allows the capillary 11 to be lowered without melting the projected wire 1 and forming ball. What is more, the projected wire 1 is bent so that its side surfaces may come into contact with a connection member and then bonding work is carried out. The capillary 11, which is lowered to bend the projected wire 1, is slanted. The direction from the first the bonding to the second bonding is alternately reversed, say, from a chip 2 to a lead 4 and then from the lead 4 to the chip 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明はワイヤボンディング方法
に関する。半導体装置の製造において、半導体チップの
電極とパッケージの内部リードとの接続は、ワイヤボン
ディング法により行われることが多い。このワイヤボン
ディングは金等の細線を一本ずつ接続するものであるか
ら、多端子の半導体装置のワイヤボンディングには長時
間を要することになる。従って、ボンディングの高速化
が望まれている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method. In the manufacture of a semiconductor device, the electrodes of the semiconductor chip and the internal leads of the package are often connected by a wire bonding method. Since this wire bonding connects thin wires such as gold one by one, it takes a long time to wire bond a multi-terminal semiconductor device. Therefore, high speed bonding is desired.

【０００２】[0002]

【従来の技術】従来の一般的な技術を図３を参照しなが
ら説明する。同図において、図１と同じものには同一の
符号を付与した。2. Description of the Related Art A general conventional technique will be described with reference to FIG. In the figure, the same components as those in FIG. 1 are designated by the same reference numerals.

【０００３】図３ (a)〜(d) は従来例のプロセスを示す
模式側面図である。この例は、リードフレームのステー
ジ部３にダイボンディングされた半導体チップ（以下、
チップと記す）２のボンディングパッド2aとリードフレ
ームの内部リード部（以下、リードと記す）４との間を
金のワイヤ１で熱圧着又は超音波熱圧着方式のワイヤボ
ンディングにより配線するものである。3 (a) to 3 (d) are schematic side views showing a process of a conventional example. In this example, a semiconductor chip die-bonded to the stage portion 3 of the lead frame (hereinafter,
The bonding pad 2a of the chip 2) and the inner lead portion (hereinafter referred to as the lead) 4 of the lead frame are wired by a gold wire 1 by thermocompression bonding or ultrasonic thermocompression bonding wire bonding. .

【０００４】先ず、上方からキャピラリ11を垂直に貫通
してその下方に突出しているワイヤ１の先端部を放電に
より溶融してボール1aを形成する（図３(a) 参照）。次
に、キャピラリ11を下降させて加熱されたボンディング
パッド2aにボール1aを押圧して第一ボンディングを行う
（図３(b) 参照）。尚、超音波熱圧着方式の場合には、
この時、キャピラリ11に超音波振動を加える。First, the tip of the wire 1 which vertically penetrates the capillary 11 from above and protrudes downward is melted by electric discharge to form a ball 1a (see FIG. 3 (a)). Then, the capillary 11 is lowered to press the ball 1a against the heated bonding pad 2a to perform the first bonding (see FIG. 3 (b)). In the case of ultrasonic thermocompression bonding,
At this time, ultrasonic vibration is applied to the capillary 11.

【０００５】次に、キャピラリ11を移動させ、加熱され
たリード４にワイヤ１の側面を押圧して第二ボンディン
グを行う（図３(c) 参照）。尚、超音波熱圧着方式の場
合には、この時、キャピラリ11に超音波振動を加える。
次に、キャピラリ11を若干上昇させた後、これまで開い
ていたワイヤクランプ（図示は省略）を閉じ、キャピラ
リ１を更に上昇させてワイヤ１を第二ボンディング部分
で切断する（図３(d)参照）。Next, the capillary 11 is moved to press the side surface of the wire 1 against the heated lead 4 to perform the second bonding (see FIG. 3 (c)). In the case of the ultrasonic thermocompression bonding method, ultrasonic vibration is applied to the capillary 11 at this time.
Next, after slightly raising the capillary 11, the wire clamp (not shown) that was open so far is closed, and the capillary 1 is further raised to cut the wire 1 at the second bonding portion (FIG. 3 (d)). reference).

【０００６】これでワイヤボンディングの一サイクルを
完了し、キャピラリ11は直前に第一ボンディングを行っ
たボンディングパッド2aに隣接するボンディングパッド
2aの上方に移動して、上述のプロセスと同じプロセスで
次のワイヤボンディングを行う。With this, one cycle of wire bonding is completed, and the capillary 11 is a bonding pad adjacent to the bonding pad 2a on which the first bonding is performed immediately before.
Moving to the upper part of 2a, the next wire bonding is performed by the same process as the above.

【０００７】[0007]

【発明が解決しようとする課題】ところが、このような
方法でワイヤボンディングすると、一サイクル毎にワイ
ヤの先端部を溶融してボールを形成しなければならない
から、又、キャピラリの移動距離が長いから、作業時間
が長くなる、という問題があった。However, when wire bonding is carried out by such a method, the tip of the wire must be melted to form a ball for each cycle, and the moving distance of the capillary is long. There was a problem that the working time would be long.

【０００８】本発明はこのような問題を解決して、作業
の高速化が可能なワイヤボンディング方法を提供するこ
とを目的とする。It is an object of the present invention to solve the above problems and provide a wire bonding method capable of accelerating the work.

【０００９】[0009]

【課題を解決するための手段】この目的は本発明によれ
ば、〔１〕ワイヤをキャピラリに垂直に挿通し、該キャ
ピラリを移動して第一及び第二ボンディングを順次に行
って、二点間にワイヤをループ状に架設するワイヤボン
ディングにおいて、第一ボンディングは該キャピラリの
下方に突出したワイヤを溶融してボールを形成すること
なく該キャピラリを下降させ、且つ該突出したワイヤの
側面を被接合体に接触させてボンディングするものであ
ることを特徴とするワイヤボンディング方法とすること
で、〔２〕前記の〔１〕におて、半導体チップのボンデ
ィングパッドとリードとの間をワイヤボンディングする
に際して、該ボンディングパッドを、金からなり、バン
プ状をなすものとしたことを特徴とするワイヤボンディ
ング方法とすることで、〔３〕前記の〔１〕記載のワイ
ヤボンディング方法により、半導体チップに列設された
複数のボンディングパッドと該ボンディングパッドのそ
れぞれと対向して配設された複数のリードとの間にワイ
ヤを順次に架設するに際して、第二ボンディングをリー
ド側に行った後の次の第一ボンディングを、直前にボン
ディングしたリードに隣接するリードに行い、第二ボン
ディングをチップ側に行った後の次の第一ボンディング
を、直前にボンディングしたボンディングパッドに隣接
するボンディングパッドに行うことを特徴とするワイヤ
ボンディング方法とすることで、達成される。According to the present invention, the object is to [1] insert a wire vertically into a capillary, and move the capillary to perform first and second bonding in sequence to obtain two points. In wire bonding in which a wire is laid in a loop between them, the first bonding melts the wire protruding below the capillary to lower the capillary without forming balls, and to cover the side surface of the protruding wire. [2] The wire bonding method is characterized in that the bonding is performed by contacting the bonded body, and [2] in the above [1], wire bonding is performed between the bonding pad of the semiconductor chip and the lead. At this time, a wire bonding method is characterized in that the bonding pad is made of gold and has a bump shape. [3] According to the wire bonding method described in [1] above, a wire is provided between a plurality of bonding pads arranged in a row on a semiconductor chip and a plurality of leads arranged to face each of the bonding pads. When sequentially laying, the next first bonding after performing the second bonding on the lead side is performed on the lead adjacent to the lead bonded immediately before, and the next first bonding after performing the second bonding on the chip side. This is accomplished by a wire bonding method characterized in that the first bonding is performed on a bonding pad adjacent to the bonding pad bonded immediately before.

【００１０】[0010]

【作用】本発明の方法ではワイヤ先端にボールを形成せ
ずに第一ボンディングを行うためにワイヤ先端部を屈曲
させる必要があるが、キャピラリを下降させる過程でこ
れを傾斜させる等の方法でワイヤを屈曲させるから、ワ
イヤの屈曲には作業時間の増を伴わない。従って、従来
の方法よりワイヤ先端を溶融する時間分だけ作業時間を
削減することが出来る。In the method of the present invention, it is necessary to bend the tip of the wire in order to perform the first bonding without forming a ball at the tip of the wire. However, in the process of lowering the capillary, the wire may be tilted. Since the wire is bent, there is no increase in working time for bending the wire. Therefore, the working time can be reduced by the time required for melting the tip of the wire as compared with the conventional method.

【００１１】更に、第一ボンディングでキャピラリを傾
斜させることにより、第一ボンディング個所からのワイ
ヤの立ち上がりを第二ボンディング側に傾斜させること
が出来る。ワイヤの立ち上がりを第二ボンディング側に
傾斜させれば、ワイヤのループを低くしても、ワイヤの
第一ボンディング個所にクラックを生じることはなく
（従来の方法ではクラックを生じ易い）、又、ループの
頂上の位置がリード方向にずれるから、リードフレーム
のステージとリードとに段差を設けて第一及び第二ボン
ディングの高さを揃えなくとも、ワイヤがチップのエッ
ジに接触する危険性は少ない（従来の方法では危険性
大）。従って、パッケージ薄型化への対応が従来の方法
より容易である。Further, by tilting the capillary in the first bonding, the rising of the wire from the first bonding portion can be tilted toward the second bonding side. If the rising of the wire is inclined toward the second bonding side, even if the loop of the wire is lowered, cracks will not occur at the first bonding point of the wire (the conventional method easily causes cracks), and the loop Since the top position of the wire is displaced in the lead direction, the risk of the wire coming into contact with the edge of the chip is small even if the height of the first and second bonding is not made even by providing a step between the stage of the lead frame and the lead ( The danger is large in the conventional method). Therefore, it is easier to make the package thinner than the conventional method.

【００１２】又、一般にパッドとリード間のスパンに比
してリード及びパッドのピッチが著しく小さいから、第
一ボンディングから第二ボンディングへの方向を、図２
(B)に示したように交互に逆転する方法とした場合に
は、キャピラリの移動距離が大幅に短縮され、作業時間
が短縮される。Further, since the pitch between the leads and the pads is generally remarkably smaller than the span between the pads and the leads, the direction from the first bonding to the second bonding is as shown in FIG.
In the case of the method of alternately reversing as shown in (B), the moving distance of the capillary is greatly shortened and the working time is shortened.

【００１３】又、ボンディングパッドをバンプ状の金と
しておけば、接合が容易になると共に、ボンディング時
の衝撃を吸収してチップの損傷を防ぐから、ワイヤボン
ディング装置のセットアップが容易になる。If the bonding pad is made of bump-shaped gold, bonding is facilitated, and shocks during bonding are absorbed to prevent damage to the chip, which facilitates setup of the wire bonding apparatus.

【００１４】[0014]

【実施例】本発明に係るワイヤボンディング方法の実施
例を図１及び図２を参照しながら説明する。図１ (a)〜
(d) は本発明の実施例のプロセスを示す図であり、図２
(A),(B) は本発明の実施例のルートを示す図である。両
図において、１はワイヤ、２はチップ、３はリードフレ
ームのステージ部、４はリード、11はキャピラリであ
る。ワイヤ１は例えば30μｍ径の金線であり、チップ２
の表面には多数のボンディングパッド2aが並んでいる。
ボンディングパッド2aは例えば厚さ１μｍのアルミニウ
ム、厚さ20μｍの金等である。EXAMPLE An example of a wire bonding method according to the present invention will be described with reference to FIGS. Figure 1 (a) ~
2 (d) is a diagram showing a process of an embodiment of the present invention, and FIG.
(A), (B) is a figure which shows the route of the Example of this invention. In both figures, 1 is a wire, 2 is a chip, 3 is a stage portion of a lead frame, 4 is a lead, and 11 is a capillary. The wire 1 is, for example, a 30 μm diameter gold wire, and the chip 2
A large number of bonding pads 2a are arranged on the surface of the.
The bonding pad 2a is, for example, aluminum having a thickness of 1 μm, gold having a thickness of 20 μm, or the like.

【００１５】先ず、第一の実施例を説明する。初期状態
では、ワイヤ１はボンディングパッド2a上方に位置する
キャピラリ11を垂直に貫通してその先端部が所定の寸法
だけ下方に突出している（図１(a) 参照）。この状態で
はワイヤボンダのワイヤクランプ（図示は省略）は閉じ
ている。次に、キャピラリ11を垂直に下降させながら、
ワイヤ１先端がリード４から遠のく方向に傾斜させる。
ワイヤ１は傾斜した状態でボンディングパッド2aに接触
し、その突出部が屈曲する。この状態でキャピラリ11が
ワイヤ１を加熱されたボンディングパッド2aに押圧して
第一ボンディングを行う（図１(b) 参照）。この時、キ
ャピラリ11には超音波振動を加える。First, the first embodiment will be described. In the initial state, the wire 1 vertically penetrates the capillary 11 located above the bonding pad 2a, and the tip portion thereof projects downward by a predetermined dimension (see FIG. 1 (a)). In this state, the wire clamp (not shown) of the wire bonder is closed. Next, while lowering the capillary 11 vertically,
The tip of the wire 1 is tilted away from the lead 4.
The wire 1 contacts the bonding pad 2a in an inclined state, and the protruding portion thereof bends. In this state, the capillary 11 presses the wire 1 against the heated bonding pad 2a to perform the first bonding (see FIG. 1 (b)). At this time, ultrasonic vibration is applied to the capillary 11.

【００１６】その後、ワイヤクランプを開き、キャピラ
リ11を移動させると共に傾斜をなくし（垂直に戻す）、
加熱されたリード４にワイヤ１の側面を押圧して第二ボ
ンディングを行う（図１(c) 参照）。この時、キャピラ
リ11に超音波振動を加える。次に、キャピラリ11を若干
上昇させた後、ワイヤクランプを閉じ、キャピラリ11を
更に上昇させてワイヤ１を第二ボンディング部分で切断
する（図１(d) 参照）。この第二ボンディングに関して
は、従来例と同じである。After that, the wire clamp is opened, the capillary 11 is moved and the inclination is removed (returned to the vertical direction),
Second side bonding is performed by pressing the side surface of the wire 1 against the heated lead 4 (see FIG. 1 (c)). At this time, ultrasonic vibration is applied to the capillary 11. Next, after slightly raising the capillary 11, the wire clamp is closed and the capillary 11 is further raised to cut the wire 1 at the second bonding portion (see FIG. 1 (d)). The second bonding is the same as the conventional example.

【００１７】以上で一サイクルのワイヤボンディングを
完了し、キャピラリ11は直前に第一ボンディングを行っ
たボンディングパッド2aに隣接するボンディングパッド
2aの上方に移動して、上述のプロセスと同じプロセスで
次のワイヤボンディングを行う（図２(A) 参照）。尚、
このルートに関しては、従来例と同じである。With the above, one cycle of wire bonding is completed, and the capillary 11 is a bonding pad adjacent to the bonding pad 2a which has just been first bonded.
After moving to the position above 2a, the next wire bonding is performed by the same process as described above (see FIG. 2 (A)). still,
This route is the same as the conventional example.

【００１８】次に、第二の実施例を説明する。この例で
は、第一ボンディングから第二ボンディングへの方向
を、図２(B) に示したように交互に変える。即ち、第二
ボンディングをリード４に行った後、キャピラリ11は次
のリード４の上方に移動し、次のワイヤボンディングは
このリード４から始めて次のボンディングパッド2aで終
わる。その次のワイヤボンディングはこの次のボンディ
ングパッド2aから始めて次のリード４で終わる。この場
合、各ボンディング・プロセスは第一の実施例と基本的
には同じであるが、第一ボンディングをリード４に行う
時のキャピラリ11の傾斜の方向をボンディングパッド2a
に行う時の逆にする。Next, a second embodiment will be described. In this example, the direction from the first bonding to the second bonding is alternately changed as shown in FIG. 2 (B). That is, after performing the second bonding to the lead 4, the capillary 11 moves above the next lead 4, and the next wire bonding starts from this lead 4 and ends at the next bonding pad 2a. The next wire bonding starts with this next bonding pad 2a and ends with the next lead 4. In this case, each bonding process is basically the same as that of the first embodiment, but the direction of the inclination of the capillary 11 when the first bonding is performed on the lead 4 is set to the bonding pad 2a.
Reverse when doing.

【００１９】以上の方法により、ワイヤボンディングの
作業時間を大幅に短縮することが出来た。本発明は以上
の実施例に限定されることなく、更に種々変形して実施
することが出来る。例えば、第一及び第二ボンディング
時にキャピラリ11に超音波振動を加えない場合でも、本
発明は有効である。又、第一ボンディング時にキャピラ
リ11を傾斜させず、斜め方向に下降させてもワイヤ１の
突出部を折り曲げることが出来る。By the above method, the working time of wire bonding could be greatly shortened. The present invention is not limited to the above embodiments, and can be implemented with various modifications. For example, the present invention is effective even when ultrasonic vibration is not applied to the capillary 11 during the first and second bonding. Further, the protruding portion of the wire 1 can be bent even if the capillary 11 is not slanted during the first bonding but is slanted downward.

【００２０】[0020]

【発明の効果】以上説明したように、本発明によれば、
作業の高速化が可能なワイヤボンディング方法を提供す
ることが出来、半導体装置製造のコスト低減等に寄与す
る。As described above, according to the present invention,
It is possible to provide a wire bonding method capable of speeding up the work, which contributes to cost reduction of semiconductor device manufacturing.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の実施例のプロセスを示す模式側面図
である。FIG. 1 is a schematic side view showing a process of an example of the present invention.

【図２】 本発明の実施例のルートを示す模式上面図で
ある。FIG. 2 is a schematic top view showing the route of the embodiment of the present invention.

【図３】 従来例のプロセスを示す模式側面図である。FIG. 3 is a schematic side view showing a process of a conventional example.

【符号の説明】[Explanation of symbols]

１ ワイヤ ２ 半導体チップ（チップ） 2a ボンディングパッド ３ ステージ部 ４ リード 11 キャピラリ 1 wire 2 semiconductor chip (chip) 2a bonding pad 3 stage part 4 lead 11 capillary

───────────────────────────────────────────────────── フロントページの続き (72)発明者 浅野 祐一 宮城県柴田郡村田町大字村田字西ケ丘１番 地の１ 株式会社富士通宮城エレクトロニ クス内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuichi Asano 1 Nishigaoka, Murata, Shibata-gun, Miyagi Prefecture

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 ワイヤ(1) をキャピラリ(11)に垂直に挿
通し、該キャピラリ(11)を移動して第一及び第二ボンデ
ィングを順次に行って、二点間にワイヤ(1)をループ状
に架設するワイヤボンディングにおいて、 第一ボンディングは該キャピラリ(11)の下方に突出した
ワイヤ(1) を溶融してボールを形成することなく該キャ
ピラリ(11)を下降させ、且つ該突出したワイヤ(1) の側
面を被接合体に接触させてボンディングするものである
ことを特徴とするワイヤボンディング方法。1. A wire (1) is inserted vertically through a capillary (11), the capillary (11) is moved to perform first and second bonding in sequence, and the wire (1) is placed between two points. In wire bonding laid in a loop, the first bonding melts the wire (1) protruding below the capillary (11) to lower the capillary (11) without forming a ball, and the protruding A wire bonding method, characterized in that the side surface of the wire (1) is brought into contact with an object to be bonded for bonding. 【請求項２】 半導体チップ(2) のボンディングパッド
(2a)とリード(4) との間のワイヤボンディング方法にお
いて、 該ボンディングパッド(2a)を、金からなり、バンプ状を
なすものとしたことを特徴とする請求項１に記載のワイ
ヤボンディング方法。2. A bonding pad for a semiconductor chip (2)
The wire bonding method between the (2a) and the lead (4) according to claim 1, wherein the bonding pad (2a) is made of gold and has a bump shape. . 【請求項３】 請求項１に記載のワイヤボンディング方
法により、半導体チップ(2) に列設された複数のボンデ
ィングパッド(2a)と該ボンディングパッド(2a)のそれぞ
れと対向して配設された複数のリード(4) との間にワイ
ヤ(1) を順次に架設するに際して、 第二ボンディングをリード(4) 側に行った後の次の第一
ボンディングを、直前にボンディングしたリード(4) に
隣接するリード(4) に行い、第二ボンディングを半導体
チップ(2) 側に行った後の次の第一ボンディングを、直
前にボンディングしたボンディングパッド(2a)に隣接す
るボンディングパッド(2a)に行うことを特徴とするワイ
ヤボンディング方法。3. The wire bonding method according to claim 1, wherein the plurality of bonding pads (2a) arranged in a row on the semiconductor chip (2) and the bonding pads (2a) are arranged so as to face each other. When sequentially laying the wire (1) between the leads (4) and the leads (4), after the second bonding is performed on the lead (4) side, the next first bonding is performed immediately before the lead (4). To the bonding pad (2a) adjacent to the immediately preceding bonding pad (2a) after the second bonding to the semiconductor chip (2) side. A wire bonding method characterized by carrying out.
JP5147267A 1993-06-18 1993-06-18 Wire bonding method Pending JPH077034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5147267A JPH077034A (en) 1993-06-18 1993-06-18 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5147267A JPH077034A (en) 1993-06-18 1993-06-18 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH077034A true JPH077034A (en) 1995-01-10

Family

ID=15426364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5147267A Pending JPH077034A (en) 1993-06-18 1993-06-18 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH077034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5728983A (en) * 1995-12-27 1998-03-17 Asmo Co., Ltd. Elongated tube-like pressure sensitive cable switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5728983A (en) * 1995-12-27 1998-03-17 Asmo Co., Ltd. Elongated tube-like pressure sensitive cable switch

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