JPH0766093A - Method and apparatus for laminating semiconductor wafers - Google Patents
Method and apparatus for laminating semiconductor wafersInfo
- Publication number
- JPH0766093A JPH0766093A JP20784993A JP20784993A JPH0766093A JP H0766093 A JPH0766093 A JP H0766093A JP 20784993 A JP20784993 A JP 20784993A JP 20784993 A JP20784993 A JP 20784993A JP H0766093 A JPH0766093 A JP H0766093A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wafers
- semiconductor wafers
- wafer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、２枚の半導体ウエーハ
を貼り合わせて多層デバイス等に用いられる接着半導体
基板を形成する際に、半導体ウエーハを貼り合わせる半
導体ウエーハの貼り合わせ方法および貼り合わせ装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer bonding method and a semiconductor wafer bonding apparatus for bonding semiconductor wafers when bonding two semiconductor wafers to each other to form an adhesive semiconductor substrate used for a multilayer device or the like. Regarding
【０００２】[0002]
【従来の技術】従来、シリコンウエーハ等の２枚の半導
体ウエーハを貼り合わせて接着して用いられる接着半導
体基板が知られている。2. Description of the Related Art Heretofore, an adhesive semiconductor substrate has been known in which two semiconductor wafers such as a silicon wafer are attached and adhered to each other.
【０００３】この種の半導体基板を形成するための貼り
合わせる装置としては、例えば、１）特開昭６１−１８
２２３９号（特開平２−１３５７２２号記載の従来技
術）、２）特開昭６１−１４５８３９号、３）特開平４
−１４２０１８号等に記載されたものが知られいる。As a bonding device for forming this kind of semiconductor substrate, for example, 1) JP-A-61-18
2239 (Prior art described in JP-A-2-135722), 2) JP-A-61-145839, and 3) JP-A-4.
Those described in No. -1421818 and the like are known.
【０００４】上記１）の貼り合わせ装置は、図９に示す
ような真空吸着面２５が凸状球面に形成され真空吸引口
２６が設けられた真空チャック２７により一方の半導体
ウエーハ（以下、ウエーハという）１を吸着し、ウエー
ハ１を凸状球面に変形させ、このウエーハ１の中央部に
他方のウエーハ１を接触して、真空チャック２７の真空
度を徐々に弱めることにより、双方の接着部を周辺部に
拡げ、双方のウエーハ１が貼り合わせられる。In the laminating apparatus of the above 1), one semiconductor wafer (hereinafter referred to as "wafer") is used by a vacuum chuck 27 having a vacuum suction surface 25 formed into a convex spherical surface and a vacuum suction port 26 as shown in FIG. ) 1 is adsorbed, the wafer 1 is deformed into a convex spherical surface, the other wafer 1 is brought into contact with the central portion of this wafer 1, and the degree of vacuum of the vacuum chuck 27 is gradually weakened so that both adhesive portions are bonded together. The wafers 1 are spread on the peripheral portion and both wafers 1 are bonded together.
【０００５】上記２）の貼り合わせ装置２８では、図１
０に示すように、表面が凸状球面に形成され真空吸引用
の吸気口２９が設けられた基台３０の表面に、弾性体か
らなるラバーチャック３１が被せられ、このラバーチャ
ック３１にはウエーハ１を吸着保持するための吸気口３
２および吸着溝が設けられている。In the laminating apparatus 28 of the above 2), FIG.
As shown in FIG. 0, a rubber chuck 31 made of an elastic material is covered on the surface of a base 30 having a convex spherical surface and provided with a suction port 29 for vacuum suction. Intake port 3 for adsorbing and holding 1
2 and a suction groove are provided.
【０００６】そして、上記ラバーチャック３１上に載置
された一方のウエーハ１を真空吸引することにより、基
台３０およびラバーチャック３１の吸気口２９、３２を
通じてラバーチャック３１およびウエーハ１の外周部が
引き寄せられ、基台３０表面の凸状球面形状に従って撓
んでウエーハ１を凸状球面に保持し、このウエーハ１
を、他方のウエーハ１の中心部に接触させて貼り合わ
せ、その後、ラバーチャック３１内に空気を少しづつ導
入してウエーハの撓みを回復させて平坦にすることによ
り、双方のウエーハ１が全面に貼合わされる。Then, by vacuum suctioning the one wafer 1 placed on the rubber chuck 31, the outer peripheral portions of the rubber chuck 31 and the wafer 1 are removed through the intake ports 29 and 32 of the base 30 and the rubber chuck 31. The wafer 1 is attracted and bends according to the convex spherical shape of the surface of the base 30 to hold the wafer 1 on the convex spherical surface.
Are brought into contact with the center of the other wafer 1 to be bonded, and then air is introduced little by little into the rubber chuck 31 to recover the warp of the wafer and make it flat, so that both wafers 1 are entirely covered. Pasted together.
【０００７】上記３）の貼り合わせ装置３３では、２枚
のウエーハ１をそれぞれ保持する一対の貼付け部材３４
を備え、これら貼付け部材３４の一方または双方のウエ
ーハ貼付け面３５が、図１１（ａ）、（ｂ）に示すよう
に、凸状球面と平坦面とに変形可能に構成されている。In the laminating apparatus 33 of the above 3), a pair of laminating members 34 for holding the two wafers 1 respectively.
One or both of the bonding members 34 have a wafer bonding surface 35 configured to be deformable into a convex spherical surface and a flat surface, as shown in FIGS. 11 (a) and 11 (b).
【０００８】そして、２枚のウエーハ１を貼り合わせる
際には、まず、各々の貼付け部材３４の貼付け面３５を
平坦面にし、貼付け面３５にそれぞれウエーハ１を吸着
保持する。次に、一方または双方の貼付け部材３４の貼
付け面３５を凸状球面に変形して貼着されたウエーハ１
を同様に凸状球面に変形させる。さらに、図１２（ａ）
に示すように、凸状球面に変形させたウエーハ１と平坦
状のウエーハ１、または凸状球面に変形させたウエーハ
１同士を、それぞれ中心部で接触してまず中心部で貼り
合わせる。次に、図１２（ｂ）〜（ｄ）に示すように、
凸状球面の貼付け面３５を平坦面に変形して貼着された
ウエーハ１を平坦状にし、双方のウエーハ１が中央部か
ら周辺部に貼付けられ、双方のウエーハ１の全面で貼合
わされ、接着ウエーハが形成される。When the two wafers 1 are bonded together, first, the bonding surfaces 35 of the respective bonding members 34 are made flat, and the wafers 1 are suction-held on the bonding surfaces 35, respectively. Next, the wafer 1 bonded by transforming the bonding surface 35 of one or both of the bonding members 34 into a convex spherical surface.
Is similarly transformed into a convex spherical surface. Furthermore, FIG.
As shown in FIG. 3, the wafer 1 deformed into a convex spherical surface and the flat wafer 1 or the wafers 1 deformed into a convex spherical surface are brought into contact with each other at their center portions and first bonded at the center portion. Next, as shown in FIGS.
The convex spherical bonding surface 35 is deformed into a flat surface to flatten the bonded wafers 1, both wafers 1 are bonded from the central portion to the peripheral portion, and the entire surfaces of both wafers 1 are bonded and bonded. Wafers are formed.
【０００９】[0009]
【発明が解決しようとする課題】ところが、従来におけ
るウエーハの貼り合わせ装置においては、以下のような
問題がある。However, the conventional wafer bonding apparatus has the following problems.
【００１０】上記１）によれば、凸状球面に形成され真
空チャックの真空吸着面にウエーハを真空吸着する際
に、図９中の矢印で示すように、真空チャック２７の周
辺部の真空吸引口２６から空気がリークされてしまい、
ウエーハを凸状球面に真空吸着できないという問題があ
る。According to the above 1), when the wafer is vacuum-sucked to the vacuum suction surface of the vacuum chuck formed on the convex spherical surface, the vacuum suction of the peripheral portion of the vacuum chuck 27 is performed as shown by the arrow in FIG. Air leaked from the mouth 26,
There is a problem that the wafer cannot be vacuum-adsorbed on the convex spherical surface.
【００１１】上記２）によれば、ウエーハを凸状球面状
に真空吸着する際に、図１０に示すように、基台３０の
周辺部の真空吸引口２９でラバーチャック３１が基台３
０の真空吸引口３２内に陥没するように変形するため、
これに伴って吸着されたウエーハ１が局部的に変形し、
この状態でウエーハ１を貼り合わせた場合にはこれらの
隙間が形成されて内部に気泡が残存してしまうという不
具合がある。According to the above 2), when the wafer is vacuum-sucked into the convex spherical shape, the rubber chuck 31 is attached to the base 3 by the vacuum suction port 29 in the peripheral portion of the base 30, as shown in FIG.
Since it deforms so as to sink into the vacuum suction port 32 of 0,
Along with this, the adsorbed wafer 1 is locally deformed,
When the wafers 1 are bonded together in this state, these gaps are formed and bubbles remain inside.
【００１２】上記３）によれば、一対の貼付け部材の貼
付け面を凸状球面に変形してウエーハを吸着し、双方の
ウエーハの中央部を接触させて貼り合わせ、その後、貼
付け部材の貼付け面を平坦に変形させて前面を貼り合わ
せるので、図１２（ｄ）に示すように、双方のウエーハ
１の貼り合わせ面で局所的に微小な隙間３６が生じ、こ
の隙間３６内に気泡が残存する問題がある。因みに、鏡
面研磨されたウエーハ１の貼り合わせ面３７は、図１２
（ａ）〜（ｃ）に示すように、微細なうねりやへこみ３
８等を有するため、ウエーハの貼り合わせ面内には０．
５〜２μｍ程度の厚みの差がある。その結果、後の工程
において、貼り合わせた半導体基板の活性領域層を薄膜
化する際に、上記気泡が残存した箇所が剥がれて半導体
基板が不良となるおそれがある。According to the above 3), the sticking surfaces of the pair of sticking members are transformed into convex spherical surfaces to adsorb the wafers, the central portions of the both wafers are brought into contact with each other, and then the sticking surfaces of the sticking members are put together. 12 is deformed to be flat and the front surfaces are bonded to each other, so that as shown in FIG. 12D, a minute gap 36 is locally generated on the bonding surface of both wafers 1, and bubbles remain in this gap 36. There's a problem. By the way, the bonding surface 37 of the mirror-polished wafer 1 is shown in FIG.
As shown in (a) to (c), fine undulations and dents 3
8 and so on, the bonded surface of the wafer has 0.
There is a thickness difference of about 5 to 2 μm. As a result, in the subsequent step, when thinning the active region layer of the bonded semiconductor substrate, there is a possibility that the portion where the bubbles remain may be peeled off and the semiconductor substrate may become defective.
【００１３】そこで、本発明は、２枚のウエーハを貼り
合わせる際に、双方のウエーハが局部的に変形せず、ウ
エーハの貼り合わせ面の微細な表面状態の影響を受ける
ことなく、貼り合わせ面間に気泡が発生しないウエーハ
の貼り合わせ方法および貼り合わせ装置を提供すること
を目的としている。Therefore, according to the present invention, when two wafers are bonded together, both wafers are not locally deformed, and the bonded surfaces are not affected by the fine surface condition of the bonded surfaces of the wafers. An object of the present invention is to provide a wafer bonding method and a wafer bonding apparatus in which no bubbles are generated between them.
【００１４】[0014]
【課題を解決するための手段】本発明の貼り合わせ方法
は、２枚の半導体ウエーハを凸状球面に保持して双方の
半導体ウエーハの中央部から周辺部に貼り合わせる半導
体ウエーハの貼り合わせ方法であって、双方の半導体ウ
エーハの中心部から周辺部へ向け放射状に、段階的に分
けて貼り合わせる構成とされている。また、前記双方の
半導体ウエーハを貼り合わせる際に、双方の半導体ウエ
ーハを互いに貼り合わせ方向へ空気圧により押出して貼
り合わせる構成である。The bonding method of the present invention is a method of bonding two semiconductor wafers, each of which is held on a convex spherical surface and is bonded from the central portion to the peripheral portion of both semiconductor wafers. Therefore, the two semiconductor wafers are bonded to each other in a stepwise manner from the center to the periphery. Further, when the two semiconductor wafers are bonded together, both semiconductor wafers are pushed out by air pressure in the bonding direction and bonded together.
【００１５】本発明の貼り合わせ装置は、貼付け面が凸
状球面に形成され前記貼付け面に半導体ウエーハを吸着
して凸状球面状に保持する一対の貼付け部材を備え、前
記吸着保持された双方の半導体ウエーハの中央部から周
辺部に向けて貼り合わせる半導体ウエーハの貼り合わせ
装置であって、前記貼付け部材の貼付け面に、複数の独
立した吸引部を当該貼付け面の中央部から周辺部に順次
設け、前記各吸引部にそれぞれ連通部材を介して真空ポ
ンプに接続するとともに、前記連通部材に切換え弁を介
してエアーポンプを接続した構成とされている。また、
前記貼付け部材の貼付け面の前記吸引部の外周部に、オ
ーリング等からなる環状の密閉部材を設けた構成であ
る。さらに、前記吸引部が前記貼付け面の中心とした同
心状の環状の溝である構成である。The laminating apparatus of the present invention comprises a pair of laminating members each having a laminating surface formed into a convex spherical surface and adsorbing a semiconductor wafer onto the laminating surface to hold the semiconductor wafer in a convex spherical shape. A semiconductor wafer bonding apparatus for bonding the semiconductor wafer from the central part to the peripheral part, wherein a plurality of independent suction parts are sequentially attached to the bonding surface of the bonding member from the central part to the peripheral part of the bonding surface. The suction unit is connected to a vacuum pump via a communication member, and an air pump is connected to the communication member via a switching valve. Also,
An annular sealing member made of an O-ring or the like is provided on an outer peripheral portion of the suction portion on the attaching surface of the attaching member. Further, the suction portion is a concentric annular groove centered on the attachment surface.
【００１６】[0016]
【作用】半導体ウエーハの貼り合わせ時には、真空ポン
プによって吸引して各々の貼付け部材の貼付け面の吸引
部により半導体ウエーハを吸着し、凸状球面に保持され
た半導体ウエーハの中央部を接触させる。次に、中央部
の吸引部に最も近い吸引部に連通する連通部材の切換え
弁を切換えてエアーポンプによりこの吸引部から空気を
吹出させると、この吸引部の部分では半導体ウエーハが
部分的に貼り合わせ方向へ押出され、双方の半導体ウエ
ーハの中央部に最も近い吸引部の部分で接触する。When the semiconductor wafers are bonded together, the semiconductor wafers are sucked by the vacuum pump and sucked by the suction portions of the bonding surfaces of the respective bonding members, and the central portions of the semiconductor wafers held by the convex spherical surfaces are brought into contact with each other. Next, when the switching valve of the communication member that communicates with the suction section closest to the central suction section is switched and air is blown out from this suction section by the air pump, the semiconductor wafer is partially adhered to this suction section. The semiconductor wafers are extruded in the mating direction and come into contact with each other at the portion of the suction portion closest to the central portions of both semiconductor wafers.
【００１７】次に、中央部の次に近い吸引部にエアーポ
ンプから空気を吹出させてこの部分の半導体ウエーハを
押出して接触し、同様にして、順次、周辺部に至るよう
に双方の半導体ウエーハを接触させ、双方の半導体ウエ
ーハを貼り合わせる。Next, air is blown from the air pump to the suction portion next to the center portion, the semiconductor wafers in this portion are pushed out and brought into contact with each other, and similarly, both semiconductor wafers are sequentially reached to the peripheral portion. Are brought into contact with each other and both semiconductor wafers are bonded together.
【００１８】この場合、貼付け面の周辺部にオーリング
等の密閉部材が設けられ、この密閉部材により半導体ウ
エーハが貼付け面に確実に密着されているので、従来の
ように周辺部での空気のリークが発生せず、半導体ウエ
ーハの局部的変形を回避でき、確実に凸状球面状に密着
することができる。In this case, a sealing member such as an O-ring is provided in the peripheral portion of the sticking surface, and the semiconductor wafer is firmly adhered to the sticking surface by this sealing member, so that the air around the sticking surface is prevented as in the conventional case. Leakage does not occur, local deformation of the semiconductor wafer can be avoided, and the semiconductor wafer can surely adhere to the convex spherical surface.
【００１９】さらに、双方の半導体ウエーハは、互い
に、中心部から周辺部へ段階的に同心円状に貼り合わせ
られることになり、双方の半導体ウエーハの貼り合わせ
面に存在する微細なうねりやへこみ等があった場合で
も、双方の半導体ウエーハの貼り合わせ面に局所的に微
小な隙間が発生せず、双方の半導体ウエーハの貼り合わ
せ面に微細な気泡が存在しない確実な貼り合わせが可能
となり、微細なうねりやへこみ等の影響を受けることな
い。Further, the two semiconductor wafers are bonded to each other in a concentric circular shape from the central portion to the peripheral portion in a stepwise manner, so that fine undulations and dents existing on the bonding surfaces of the two semiconductor wafers. Even if there is, a minute gap is not locally generated on the bonding surface of both semiconductor wafers, and reliable bonding can be performed without fine bubbles on the bonding surface of both semiconductor wafers. It is not affected by swells or dents.
【００２０】[0020]
【実施例】以下に本発明の一実施例を図面に基づき説明
する。図１は本実施例の貼り合わせ装置の概略構成図を
示し、図２は貼付け部材の平面図を示している。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic configuration diagram of a bonding apparatus of this embodiment, and FIG. 2 shows a plan view of a bonding member.
【００２１】本実施例における貼り合わせ装置２の一対
の貼付け部材３を備えており、各貼付け部材３は、図１
に示すように、貼付け面４が凸状球面にそれぞれ形成さ
れ、これらの貼付け面４にウエーハ１が吸着される。The present embodiment is provided with a pair of sticking members 3 of the sticking device 2, and each sticking member 3 is shown in FIG.
As shown in FIG. 3, the sticking surface 4 is formed into a convex spherical surface, and the wafer 1 is adsorbed to the sticking surface 4.
【００２２】各貼付け部材３の貼付け面４の周辺部に
は、図３に示すように、貼付け面４の中心を同心とした
溝５が環状に形成され、この溝５内にはオーリング（密
閉部材）６が嵌着されている。また、各貼付け面４に
は、図２に示すように、貼付け面４の中心を同心状とし
た所要深さの環状の溝（吸引部）、すなわち、中央溝
７、中間溝８、および周辺溝９が独立に形成され、周辺
溝９はオーリング６の内側に設けられている。さらに、
図１に示すように、各々の溝７、８、９内に連通する吸
引通路１１、１２、１３が各貼付け部材３内に形成され
ている。As shown in FIG. 3, a groove 5 concentric with the center of the sticking surface 4 is formed in the peripheral portion of the sticking surface 4 of each sticking member 3, and an O-ring ( The sealing member) 6 is fitted. In addition, as shown in FIG. 2, each attachment surface 4 has an annular groove (suction portion) of a required depth in which the center of the attachment surface 4 is concentric, that is, the central groove 7, the intermediate groove 8, and the periphery. The groove 9 is formed independently, and the peripheral groove 9 is provided inside the O-ring 6. further,
As shown in FIG. 1, suction passages 11, 12, and 13 that communicate with the respective grooves 7, 8, and 9 are formed in each sticking member 3.
【００２３】上記各々の吸引通路１１、１２、１３はそ
れぞれ独立して貼付け部材３内に設けられており、これ
らの吸引通路１１、１２、１３には配管やホース等の連
通部材１４、１５、１６が接続されている。さらに、中
央溝７に連通する連通部材１４は真空ポンプ２０に接続
され、中間溝８と周辺溝９に接続される連通部材１５、
１６には第１切換え弁１８または第２切換え弁１９を介
して真空ポンプ２１に接続されている。また、中間溝８
と周辺溝９に接続される連通通路１５、１６は第１切換
え弁１８または第２切換え弁１９を介してエアーポンプ
２１にそれぞれ接続された構成である。尚、上記各切換
え弁１８、１９は、オフ時には真空ポンプ２０に連通さ
れ、オン時にはエアーポンプ２１に連通される構成であ
る。The suction passages 11, 12 and 13 are independently provided in the attaching member 3, and the suction passages 11, 12 and 13 are provided with communicating members 14, 15 such as pipes and hoses. 16 are connected. Further, the communicating member 14 communicating with the central groove 7 is connected to the vacuum pump 20, and the communicating member 15 connected to the intermediate groove 8 and the peripheral groove 9,
A vacuum pump 21 is connected to 16 via a first switching valve 18 or a second switching valve 19. Also, the intermediate groove 8
The communication passages 15 and 16 connected to the peripheral groove 9 are connected to the air pump 21 via the first switching valve 18 or the second switching valve 19, respectively. The switching valves 18 and 19 are connected to the vacuum pump 20 when they are off and to the air pump 21 when they are on.
【００２４】次に、上記構成の貼付け装置２によりウエ
ーハ１を貼り合わせる場合について図４に基づき説明す
る。Next, a case where the wafer 1 is bonded by the bonding apparatus 2 having the above-mentioned structure will be described with reference to FIG.
【００２５】まず、図４に示すように、各切換え弁１
８、１９をオフにして真空ポンプ２０により吸引する
と、図５に示すように、各々の貼付け部材３の貼付け面
４に設けられた各々の溝により、ウエーハ１を吸引して
各貼付け面４にウエーハ１を吸着する。この場合、貼付
け面４の周縁部に設けられたオーリング６が、図６に示
すように、変形し、これにより貼付け面４に確実に密着
され、それぞれ凸状球面の状態で保持される。その結
果、従来のような周辺溝９での空気のリークを防止で
き、また、各溝においてウエーハ１が局部的にへこむ等
の変形することがなくなり、確実にウエーハ１を凸状球
面状に密着することができる。First, as shown in FIG. 4, each switching valve 1
When 8 and 19 are turned off and suction is carried out by the vacuum pump 20, as shown in FIG. 5, the wafer 1 is sucked by the respective grooves provided on the sticking surface 4 of each sticking member 3 to the respective sticking surfaces 4. Adsorb wafer 1. In this case, the O-ring 6 provided on the peripheral portion of the sticking surface 4 is deformed as shown in FIG. 6, whereby the sticking surface 4 is surely brought into close contact with each other and held in a convex spherical surface state. As a result, it is possible to prevent air leakage in the peripheral groove 9 as in the conventional case, and to prevent the wafer 1 from being locally deformed or otherwise deformed in each groove, so that the wafer 1 can be firmly adhered to the convex spherical surface. can do.
【００２６】次に、真空ポンプ２０により吸引した状態
で、凸状球面に保持されたウエーハ１の中央部を接触さ
せる。さらに、中間溝８に連通する連通部材１６の第１
切換え弁１８をオンに切換えるとともにエアーポンプ２
１を駆動すると、双方の貼付け部材３においてエアーポ
ンプ２１よる空気が中間溝８内に空気が吹出され、図７
に示すように、ウエーハ１が環状の中間溝８の部分で外
方へ押出される。そして、双方のウエーハ１が中間溝８
の部分で互いに接触する。この時、中央溝７および周辺
溝９では真空ポンプ２０により真空吸引が行なわれてい
るので、双方のウエーハ１は貼付け部材３に密着した状
態が維持される。Next, in the state of being sucked by the vacuum pump 20, the central portion of the wafer 1 held on the convex spherical surface is brought into contact. Further, the first of the communication member 16 that communicates with the intermediate groove 8
The switching valve 18 is switched on and the air pump 2
When 1 is driven, the air from the air pump 21 is blown into the intermediate groove 8 in both of the attaching members 3,
As shown in FIG. 3, the wafer 1 is extruded outward at the portion of the annular intermediate groove 8. Then, both wafers 1 have the intermediate groove 8
Contact each other. At this time, since vacuum suction is performed by the vacuum pump 20 in the central groove 7 and the peripheral groove 9, both wafers 1 are kept in close contact with the attaching member 3.
【００２７】最後に、周辺溝９に連通する連通部材１６
の第２切換え弁１９をオンに切換えるとともにエアーポ
ンプ２１を駆動すると、双方の貼付け部材３においてエ
アーポンプ２１よる空気が中間溝８に変わって次に周辺
溝９内に空気が吹出される。Finally, a communicating member 16 communicating with the peripheral groove 9
When the second switching valve 19 is turned on and the air pump 21 is driven, the air from the air pumps 21 of both the attachment members 3 is changed to the intermediate groove 8 and then the air is blown into the peripheral groove 9.
【００２８】そして、図８に示すように、ウエーハ１が
周辺溝９の部分で供給される空気により外方へ押出さ
れ、双方のウエーハ１が周辺溝９の部分で互いに接触す
る。Then, as shown in FIG. 8, the wafer 1 is pushed outward by the air supplied in the peripheral groove 9 portion, and both wafers 1 contact each other in the peripheral groove 9 portion.
【００２９】その結果、双方のウエーハは、互いに、中
心部から周辺部へ亘って段階的に同心円状に貼り合わせ
られることになり、双方のウエーハの貼り合わせ面に存
在する微細なうねりやへこみ等があった場合でも、双方
のウエーハの貼り合わせ面に局所的に微小な隙間が発生
することなく、双方のウエーハの貼り合わせ面に微細な
気泡が存在しない確実な貼り合わせが可能となり、微細
なうねりやへこみ等の影響を受けることない。As a result, the two wafers are bonded to each other in a concentric manner in a stepwise manner from the central portion to the peripheral portion, and minute waviness and dents or the like existing on the bonding surface of the both wafers. Even if there is, a minute gap is not locally generated on the bonding surface of both wafers, and reliable bonding can be performed without fine bubbles on the bonding surface of both wafers. It is not affected by swells or dents.
【００３０】尚、本実施例では、貼付け部材の貼付け面
の周辺部にオーリングからなる密閉部材を環状に設けた
場合について説明したが、このような密閉部材を設け内
場合にも、ウエーハの周辺部が周辺の吸引口や溝から吹
出される空気により貼り合わせほうこうへ押出されるの
で、同様の効果を得ることができる。In the present embodiment, a case has been described in which a sealing member made of an O-ring is provided in an annular shape in the peripheral portion of the sticking surface of the sticking member. However, even when such a sealing member is provided, the wafer The same effect can be obtained because the peripheral portion is extruded into the bonding stack by the air blown out from the peripheral suction port or groove.
【００３１】また、各吸引用の溝としては、貼付け面の
中心を同心状とした環状に形成しなくとも、同様な効果
を得ることが可能である。Further, it is possible to obtain the same effect without forming each suction groove as an annular shape in which the center of the attaching surface is concentric.
【００３２】[0032]
【発明の効果】以上説明したように本発明によれば、貼
付け面の周辺部にオーリング等の密閉部材が設けられ、
この密閉部材により半導体ウエーハが貼付け面に確実に
密着されているので、従来のように周辺部での空気のリ
ークが発生せず、半導体ウエーハの局部的変形を回避で
き、確実に凸状球面状に密着することができる。As described above, according to the present invention, a sealing member such as an O-ring is provided in the peripheral portion of the attaching surface,
This sealing member ensures that the semiconductor wafer is in close contact with the pasting surface, so air leakage does not occur in the peripheral area as in the conventional case, local deformation of the semiconductor wafer can be avoided, and a convex spherical surface can be reliably formed. Can be adhered to.
【００３３】またに、双方の半導体ウエーハは、互い
に、中心部から周辺部へ段階的に同心円状に貼り合わせ
られることになり、双方の半導体ウエーハの貼り合わせ
面に存在する微細なうねりやへこみ等があった場合で
も、双方の半導体ウエーハの貼り合わせ面に局所的に微
小な隙間が発生せず、双方の半導体ウエーハの貼り合わ
せ面に微細な気泡が存在しない確実な貼り合わせが可能
となり、多層デバイス等に用いて好適である。Further, the two semiconductor wafers are bonded to each other in a concentric circular shape from the central portion to the peripheral portion in a stepwise manner, and fine undulations, dents and the like existing on the bonding surfaces of the two semiconductor wafers. Even if there is, a minute gap is not locally generated on the bonding surface of both semiconductor wafers, and reliable bonding without fine bubbles on the bonding surface of both semiconductor wafers is possible. It is suitable for use in devices and the like.
【図１】本発明の一実施例に係り、貼り合わせ装置の概
略構成図である。FIG. 1 is a schematic configuration diagram of a bonding device according to an embodiment of the present invention.
【図２】貼付け部材の平面図である。FIG. 2 is a plan view of a pasting member.
【図３】密閉部材を示す図２中のIII−III矢視拡大断面
図である。FIG. 3 is an enlarged cross-sectional view taken along the line III-III in FIG. 2 showing a sealing member.
【図４】半導体ウエーハの貼り合わせる工程を示すタイ
ムチャートである。FIG. 4 is a time chart showing a step of laminating semiconductor wafers.
【図５】貼付け部材に吸着された半導体ウエーハを示す
縦断面図である。FIG. 5 is a vertical cross-sectional view showing a semiconductor wafer adsorbed on a bonding member.
【図６】密閉部材を示す要部の断面図である。FIG. 6 is a sectional view of a main part showing a sealing member.
【図７】中央部および中間部での貼り合わせ状態を説明
する縦断面図である。FIG. 7 is a vertical cross-sectional view illustrating a bonded state in a central portion and an intermediate portion.
【図８】半導体ウエーハの貼り合わせ状態を説明する縦
断面図である。FIG. 8 is a vertical cross-sectional view illustrating a bonded state of semiconductor wafers.
【図９】従来例に係り、真空チャックの縦断面図であ
る。FIG. 9 is a vertical cross-sectional view of a vacuum chuck according to a conventional example.
【図１０】従来例に係り、基台およびラバーチャックを
示す縦断面図である。FIG. 10 is a vertical cross-sectional view showing a base and a rubber chuck according to a conventional example.
【図１１】従来例に係り、（ａ）は凸状球面時の貼付け
部材の縦断面図、（ｂ）は平坦時の貼付け部材の縦断面
図を示す。11A and 11B relate to a conventional example, and FIG. 11A is a vertical cross-sectional view of a pasting member when a convex spherical surface, and FIG.
【図１２】従来例に係り、半導体ウエーハの貼り合わせ
順序を示す側面図である。FIG. 12 is a side view showing a bonding order of semiconductor wafers according to a conventional example.
１ 半導体ウエーハ ２ 貼り合わせ装置 ３ 貼付け部材 ４ 貼付け面 ６ 密閉部材（オーリング） ７、８、９ 吸引部（溝） １４、１５、１６ 連通部材 １８、１９ 切換え弁 ２０ 真空ポンプ ２１ エアーポンプ DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Laminating apparatus 3 Laminating member 4 Laminating surface 6 Sealing member (O-ring) 7, 8, 9 Suction part (groove) 14, 15, 16 Communication member 18, 19 Switching valve 20 Vacuum pump 21 Air pump
Claims (5)
して双方の半導体ウエーハの中央部から周辺部に貼り合
わせる半導体ウエーハの貼り合わせ方法であって、 双
方の半導体ウエーハの中心部から周辺部へ向け放射状
に、段階的に分けて貼り合わせることを特徴とする半導
体ウエーハの貼り合わせ方法。1. A method of bonding two semiconductor wafers, each of which is held on a convex spherical surface and is bonded from a central portion of both semiconductor wafers to a peripheral portion thereof, wherein the semiconductor wafers are bonded from a central portion to a peripheral portion. A method for laminating semiconductor wafers, which is characterized in that the wafers are bonded to each part in a radial manner in stages.
る際に、双方の半導体ウエーハを互いに貼り合わせ方向
へ空気圧により押出して貼り合わせる請求項１記載の半
導体ウエーハの貼り合わせ方法。2. The method of bonding semiconductor wafers according to claim 1, wherein, when bonding the two semiconductor wafers, the semiconductor wafers are bonded together by being extruded in the bonding direction by air pressure.
け面に半導体ウエーハを吸着して凸状球面状に保持する
一対の貼付け部材を備え、前記吸着保持された双方の半
導体ウエーハの中央部から周辺部へ向けて貼り合わせる
半導体ウエーハの貼り合わせ装置であって、 前記貼付け部材の貼付け面に、複数の独立した吸引部を
当該貼付け面の中央部から周辺部に順次設け、前記各吸
引部にそれぞれ連通部材を介して真空ポンプに接続する
とともに、前記連通部材に切換え弁を介してエアーポン
プを接続したことを特徴とする半導体ウエーハの貼り合
わせ装置。3. A sticking surface is formed into a convex spherical surface, and a pair of sticking members for adsorbing and holding the semiconductor wafer on the sticking surface in a convex spherical shape are provided, and the central portions of both the adsorbed and held semiconductor wafers. A semiconductor wafer laminating apparatus for laminating from a peripheral part to a peripheral part, wherein a plurality of independent suction parts are sequentially provided from the central part of the bonding surface to the peripheral part on the bonding surface of the bonding member, and the suction parts The semiconductor wafer bonding apparatus is characterized in that each is connected to a vacuum pump via a communication member, and an air pump is connected to the communication member via a switching valve.
の外周部に、オーリング等からなる環状の密閉部材を設
けた請求項３記載の半導体ウエーハの貼り合わせ装置。4. The semiconductor wafer bonding apparatus according to claim 3, wherein an annular sealing member made of an O-ring or the like is provided on an outer peripheral portion of the suction portion on the bonding surface of the bonding member.
同心状の環状の溝である請求項３記載の半導体ウエーハ
の貼り合わせ装置。5. The semiconductor wafer bonding apparatus according to claim 3, wherein the suction portion is a concentric annular groove centered on the bonding surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20784993A JPH0766093A (en) | 1993-08-23 | 1993-08-23 | Method and apparatus for laminating semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20784993A JPH0766093A (en) | 1993-08-23 | 1993-08-23 | Method and apparatus for laminating semiconductor wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0766093A true JPH0766093A (en) | 1995-03-10 |
Family
ID=16546551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20784993A Pending JPH0766093A (en) | 1993-08-23 | 1993-08-23 | Method and apparatus for laminating semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766093A (en) |
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