JPH0749152B2 - Method for manufacturing envelope of rectifying element - Google Patents
Method for manufacturing envelope of rectifying elementInfo
- Publication number
- JPH0749152B2 JPH0749152B2 JP61138278A JP13827886A JPH0749152B2 JP H0749152 B2 JPH0749152 B2 JP H0749152B2 JP 61138278 A JP61138278 A JP 61138278A JP 13827886 A JP13827886 A JP 13827886A JP H0749152 B2 JPH0749152 B2 JP H0749152B2
- Authority
- JP
- Japan
- Prior art keywords
- brazing
- envelope
- ceramic plate
- rectifying element
- brazed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Ceramic Products (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明はサイリスタ整流素子の外囲器に関し、更に詳し
くは、従来の製造工程よりも工程を短縮して製造するこ
とができる整流素子の外囲器の製造方法に関する。The present invention relates to an envelope for a thyristor rectifying element, and more specifically, it can be manufactured in a shorter process than the conventional manufacturing process. The present invention relates to a method of manufacturing an envelope of a rectifying element that can be used.
（従来の技術） 例えばシリコン半導体を用いた整流素子は概ね図に例示
したような構造体として組立られる。図はその縦断面図
で、１は環状のセラミックス板である。セラミックス板
１の中央空間には、例えば銅から成る下部円板電極2a,
その上にマウントされた例えばシリコンウェハー3,更に
その上にマウントされた上部円板電極2bとで構成される
整流部を、下部円板電極2aの周縁部に溶接された例えば
Fe−Ni−Co合金のような金属リング４をセラミックス板
１の下面に気密にろう接することによって配設されてい
る。(Prior Art) For example, a rectifying element using a silicon semiconductor is generally assembled as a structure as illustrated in the drawing. The figure is a vertical cross-sectional view thereof, in which reference numeral 1 denotes an annular ceramic plate. In the central space of the ceramic plate 1, a lower disk electrode 2a made of, for example, copper,
For example, a rectifying section composed of, for example, a silicon wafer 3 mounted thereon, and an upper disc electrode 2b mounted thereon is welded to the peripheral portion of the lower disc electrode 2a.
A metal ring 4 such as an Fe-Ni-Co alloy is disposed on the lower surface of the ceramic plate 1 by airtight brazing.
５は中央に大孔を有し端部が土堤状にたちあがっている
外囲環で、その周端下面はセラミックス板１の上面に気
密にろう接されている。5aは外囲環５の土堤部の任意個
所に付設されたゲートチューブである。Reference numeral 5 denotes an outer ring having a large hole in the center and an end portion rising like a bank, the lower surface of the peripheral edge of which is hermetically brazed to the upper surface of the ceramic plate 1. Reference numeral 5a is a gate tube attached to an arbitrary portion of the embankment portion of the outer ring 5.
したがって、このような外囲器を製造する際には、セラ
ミックス板１の下面と金属リング４のろう接及びセラミ
ックス板１の上面と外囲環５の周端下面とのろう接を行
なうことが不可欠となる。Therefore, when manufacturing such an envelope, the lower surface of the ceramic plate 1 and the metal ring 4 are brazed, and the upper surface of the ceramic plate 1 and the peripheral end lower surface of the outer ring 5 are brazed. Indispensable.
このろう接は従来次のようにして行なわれている。すな
わち、まず、セラミックス板１のろう接個所にモリブデ
ンペースト，モリブデン−マンガンペーストのようなペ
ーストを塗布し、しかるのちに全体を例えば水素炉中で
所定温度（通常、1450〜1550℃）に加熱してメタライズ
層に転化せしめ、更に形成されたメタライズ層の表面に
例えばニッケルメッキを施してから各金属リング及び外
囲環をそこにろう付するという方法である。This brazing has been conventionally performed as follows. That is, first, a paste such as molybdenum paste or molybdenum-manganese paste is applied to the brazing portion of the ceramic plate 1, and then the whole is heated to a predetermined temperature (usually 1450 to 1550 ° C.) in, for example, a hydrogen furnace. The metallized layer is converted to a metallized layer, and the surface of the metallized layer thus formed is plated with nickel, for example, and then each metal ring and the surrounding ring are brazed thereto.
（発明が解決しようとする問題点） 外囲器の組立てにおける上記の方法は、メタライズ層の
上にニッケルメッキを施したうえで、更にろう接すべき
金属部材をろう付するのであるから必要とする工程は多
くなる。仮に、加熱と同時にセラミックス板と金属部材
とのろう接を完了せしめるような方法を見出せば、それ
は上記した方法に比べて２工程短縮することになり生産
性向上の面における貢献度は大である。(Problems to be Solved by the Invention) The above method for assembling the envelope is necessary because the metallized layer is nickel-plated and then the metal member to be brazed is brazed. There are many steps to do. If a method that can complete the brazing of the ceramic plate and the metal member at the same time as heating is found, it will shorten the process by 2 steps compared to the method described above, and the contribution to the improvement of productivity will be great. .
本発明は、上記した工程短縮を可能とするろう材を用い
ることによって製造した整流素子の外囲器の提供を目的
とする。An object of the present invention is to provide an envelope for a rectifying element manufactured by using a brazing material that enables the above-mentioned process reduction.
［発明の構成］ （問題点を解決するための手段） 本発明者らは上記目的を達成すべくセラミックス材と金
属部材とを加熱と同時にろう接し得るろう材に関し鋭意
研究を重ねた結果、後述するろう材は有効であるとの事
実を見出し、本発明の外囲器を開発するに到った。[Structure of the Invention] (Means for Solving the Problems) The inventors of the present invention have conducted extensive studies on a brazing material capable of brazing a ceramic material and a metal member at the same time as heating in order to achieve the above object. The brazing filler metal was found to be effective, and the inventors have developed the envelope of the present invention.
すなわち、本発明によって製造される整流素子の外囲器
は、環状セラミックス板の下面に、半導体ウェハーを挟
持した２枚の円板電極がその下部円板電極に溶接された
金属リングを介してろう接されており、また、該環状セ
ラミックス板の上面には金属外囲環がろう接されている
整流素子の外囲器において、ろう接に用いるろう材がチ
タン（Ti）を0.1〜15重量％含有しているろう材である
ことを特徴とする。That is, in the envelope of the rectifying device manufactured by the present invention, the two disc electrodes sandwiching the semiconductor wafer are provided on the lower surface of the annular ceramic plate via the metal ring welded to the lower disc electrode. In the envelope of the rectifying element in which the metal outer ring is brazed to the upper surface of the annular ceramic plate, the brazing material used for brazing is 0.1 to 15% by weight of titanium (Ti). It is a brazing filler metal contained.
本発明の外囲器の構造は、セラミックス板１と金属リン
グ4,外囲器５をろう接する際に用いるろう材が上記した
組成のろう材であることを除いては図に示したものと同
じである。The structure of the envelope of the present invention is as shown in the figure except that the brazing material used when brazing the ceramic plate 1, the metal ring 4, and the envelope 5 is the brazing material having the above composition. Is the same.
セラミックス板１の材料としては、従来から外囲器に用
いられているものであれば何であってもよいが、例え
ば、アルミナ系，ムライト系のような酸化物セラミック
ス；窒化ケイ素，炭化ケイ素のような非酸化物セラミッ
クスをあげることができる。The material of the ceramic plate 1 may be any material conventionally used for envelopes, but for example, oxide ceramics such as alumina-based and mullite-based; silicon nitride, silicon carbide, etc. There are various non-oxide ceramics.
また、金属リング，金属外囲環の材料としては、同じく
従来から用いられているものであれば何であってもよい
が、例えば、前述したFe−Ni−Co合金は好適である。Further, as the material of the metal ring and the metal outer ring, any material may be used as long as it has been conventionally used, but for example, the above-mentioned Fe-Ni-Co alloy is suitable.
ろう材としては、Tiを0.1重量％以上３重量％未満含有
せしめたものであればよい。Tiはろう接の加熱処理時に
セラミックス材料の表面を活性化せしめ、ろう材へのセ
ラミックス板の濡れ性を向上せしめ、もって金属部材と
のろう接強度を高めかつ気密性を向上せしめるに有効な
成分である。Any brazing material may be used as long as it contains 0.1% by weight or more and less than 3% by weight of Ti. Ti is an effective component that activates the surface of the ceramic material during the heat treatment of the brazing, improves the wettability of the ceramic plate to the brazing material, and thus enhances the brazing strength with the metal member and the airtightness. Is.
用いるろう材において、Ti含有量が少なすぎると上記し
た効果は得られず、逆にTi含有量が多くなりすぎるとろ
う材の融点は上昇してろう接作業が熱経済的に不利にな
るのでそのTi含有量は上記のとおりとする。好ましくは
0.2重量％以上３重量％未満である。In the brazing material used, if the Ti content is too low, the above-mentioned effects cannot be obtained, and conversely, if the Ti content is too high, the melting point of the brazing material rises and the brazing operation becomes thermo-economically disadvantageous. The Ti content is as described above. Preferably
It is 0.2% by weight or more and less than 3% by weight.
ろう材としては、既にJISのBAg−8,BAu−２等で規定さ
れている各種のろう材に、Tiを上記範囲内で配合した組
成の合金であってもよく、またはJIS規格のろう材の粉
末若しくは箔に所定量のTi粉若しくは箔を混合したり積
層したりしたものであってもよい。As the brazing material, various brazing materials already defined in JIS BAg-8, BAu-2, etc. may be alloys having a composition in which Ti is mixed within the above range, or a JIS standard brazing material. The powder or foil may be mixed or laminated with a predetermined amount of Ti powder or foil.
とくに、Ti−Zr系のもの,Ti−Ag−Cu系のもの,Ti−Cu−
Al系のもの,Cu−Ti系,Cu−Zr系,Zr−Ag−Cu系,Ti−Ni系
などは好適である。Especially, Ti-Zr type, Ti-Ag-Cu type, Ti-Cu-
Al type, Cu-Ti type, Cu-Zr type, Zr-Ag-Cu type and Ti-Ni type are suitable.
本発明の外囲器は例えば次のようにして製造することが
できる。The envelope of the present invention can be manufactured, for example, as follows.
まず、環状セラミックス板のろう接すべき個所に上記し
たろう材を配置する。配置の態様はろう材の粉末を可及
的均一に層状に散布してもよいし、または所定厚みのろ
う材箔を並べてもよい。このときの厚みは50μｍ程度で
あると、ろう接後の気密性が良好となって好ましい。ま
た、ろう材を配置する際のセラミックス板はその表面を
JISB0601で規定する表面粗さがＲmax５μｍ以下となる
ように表面処理を施しておくことが好ましい。接合強度
向上，気密性向上のいずれにも資するからである。First, the brazing material described above is arranged at a portion to be brazed to the annular ceramic plate. With respect to the arrangement mode, the brazing material powder may be sprayed in a layered manner as uniformly as possible, or a brazing material foil having a predetermined thickness may be arranged. A thickness of about 50 μm at this time is preferable because the airtightness after brazing is good. Also, when placing the brazing material, the ceramic plate
Surface treatment is preferably performed so that the surface roughness defined by JIS B0601 is R max of 5 μm or less. This is because it contributes to both improvement of the bonding strength and airtightness.
その後、このろう材層に金属リング又は外囲環のろう接
部位を当接し、全体に荷重を加えながら加熱処理を施
す。Then, the brazing portion of the metal ring or the outer ring is brought into contact with the brazing material layer, and heat treatment is performed while applying a load to the whole.
加熱処理条件は、ろう材のTi含有量等によって変化させ
ることになるが、通常、４×10-5Torr以下の真空中又は
不活性ガス中，荷重30〜100g/cm2以上，温度800〜900
℃，時間0.5〜15分間であればよい。The heat treatment conditions will be changed depending on the Ti content of the brazing filler metal, etc., but usually in a vacuum of 4 × 10 −5 Torr or less or in an inert gas, a load of 30 to 100 g / cm 2 or more, a temperature of 800 to 900
It may be at ℃ for 0.5 to 15 minutes.
かくして、セラミックス板に金属リングと外囲環が気密
にろう接された外囲器が得られる。Thus, an envelope in which the metal ring and the envelope ring are airtightly brazed to the ceramic plate is obtained.
（実施例） 真空溶解法によりTi ２重量％,Ag71重量％,Cu 27重量
％の組成から成り厚み50μｍの合金箔を調製した。(Example) An alloy foil having a composition of 2% by weight of Ti, 71% by weight of Ag and 27% by weight of Cu and having a thickness of 50 μm was prepared by a vacuum melting method.
窒化ケイ素から成る環状セラミックス板のろう接個所を
研磨してＲmax５μｍ以下の表面粗さとし、ここに上記
の合金箔を並べ、その上にFe−Co−Ni合金製の外囲環を
載置し、全体に60g/cm2の圧力を印加しながら、５×10
-6Torrの真空中,860℃の温度下で６分間加熱処理を施し
た。The brazing portion of the ring-shaped ceramic plate made of silicon nitride is polished to have a surface roughness of R max of 5 μm or less, the above alloy foils are arranged on this, and an outer ring made of Fe—Co—Ni alloy is placed thereon. Then, while applying a pressure of 60g / cm 2 to the whole, 5 × 10
Heat treatment was performed for 6 minutes at a temperature of 860 ° C. in a vacuum of −6 Torr.
セラミックス板の他面のろう接個所にも同様の条件で金
属リングをろう接し図に示したような整流素子の外囲器
を製作した。A metal ring was brazed to the brazing part on the other surface of the ceramic plate under the same conditions to fabricate the envelope of the rectifying element as shown in the figure.
全体を密閉してろう接部の気密性を測定したところ１×
10-8cc/secであり、従来方法によるものと何ら遜色はな
かった。また、ろう接部の接合強度も良好であった。When the airtightness of the brazed part was measured after sealing the whole, it was 1 x
It was 10 -8 cc / sec, which was comparable to the conventional method. Further, the bonding strength of the brazed portion was also good.
［発明の効果］ 以上の説明で明らかなように、本発明の外囲器を製作す
るに当っては、セラミックス板と金属部材との接合時
に、従来方法のようにメタライズ層の上にニッケルメッ
を施す工程，更にその上に金属部材を溶接する工程が不
要となるので、生産性の向上に資すること極めて大であ
る。そして、本発明の外囲器はろう接部の接合強度，気
密性はいずれも良好であり、低価格で信頼性の高い外囲
器としてその工業的価値は大である。[Effects of the Invention] As is clear from the above description, when manufacturing the envelope of the present invention, when the ceramic plate and the metal member are joined, a nickel mesh is formed on the metallized layer as in the conventional method. Since the step of applying and the step of welding the metal member thereon are unnecessary, it is extremely important to contribute to the improvement of productivity. In addition, the envelope of the present invention has good joint strength and airtightness at the brazing portion, and its industrial value is great as an inexpensive and highly reliable envelope.
図は整流素子の外囲器の縦断面図である。 １……環状セラミックス板、2a……下部円板電極 2b……上部円板電極、３……半導体ウェハー ４……金属リング、５……外囲環 5a……ゲートチューブ The figure is a vertical cross-sectional view of the envelope of the rectifying element. 1-annular ceramic plate, 2a-lower disc electrode 2b-upper disc electrode, 3-semiconductor wafer 4-metal ring, 5-envelope ring 5a-gate tube
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−232692（ＪＰ，Ａ) 特開 昭62−289396（ＪＰ，Ａ) 特開 昭58−120578（ＪＰ，Ａ) 特開 昭59−137373（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-59-232692 (JP, A) JP-A-62-289396 (JP, A) JP-A-58-120578 (JP, A) JP-A-59- 137373 (JP, A)
Claims (1)
め、両者間にチタンを0.1重量％以上３重量％未満含有
するろう材を介在させ、真空中又は不活性ガス中、荷重
30〜100g/cm2以上、温度800〜900℃、時間0.5〜15分間
の条件下で加熱することを特徴とする整流素子の外囲器
の製造方法。1. To braze a metal material to a ceramic material, a brazing material containing titanium in an amount of 0.1% by weight or more and less than 3% by weight is interposed between the two, and a load is applied in a vacuum or in an inert gas.
A method for manufacturing an envelope for a rectifying element, which comprises heating under conditions of 30 to 100 g / cm 2 or more, a temperature of 800 to 900 ° C., and a time of 0.5 to 15 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138278A JPH0749152B2 (en) | 1986-06-16 | 1986-06-16 | Method for manufacturing envelope of rectifying element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138278A JPH0749152B2 (en) | 1986-06-16 | 1986-06-16 | Method for manufacturing envelope of rectifying element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62296959A JPS62296959A (en) | 1987-12-24 |
| JPH0749152B2 true JPH0749152B2 (en) | 1995-05-31 |
Family
ID=15218175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61138278A Expired - Lifetime JPH0749152B2 (en) | 1986-06-16 | 1986-06-16 | Method for manufacturing envelope of rectifying element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0749152B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055361A (en) * | 1989-03-17 | 1991-10-08 | Gte Laboratories Incorporated | Bonded ceramic-metal article |
| JPH0725677A (en) * | 1993-05-10 | 1995-01-27 | Isuzu Motors Ltd | Method for joining ceramics to nickel or nickel-based alloy |
| JP3890539B2 (en) * | 1996-04-12 | 2007-03-07 | Ｄｏｗａホールディングス株式会社 | Ceramic-metal composite circuit board |
| SE524934C2 (en) * | 2002-11-14 | 2004-10-26 | Tetra Laval Holdings & Finance | Electrical connection to ceramic sealing jaw and way of making said connection |
| CN113909608A (en) * | 2021-11-08 | 2022-01-11 | 浙江亚通焊材有限公司 | Method for connecting AlN ceramic and Cu by brazing |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232692A (en) * | 1983-06-17 | 1984-12-27 | Ngk Spark Plug Co Ltd | Brazing filler metal for joining ceramics and metal or the like and composite body composed of ceramics and metal or the like using said brazing filler metal |
-
1986
- 1986-06-16 JP JP61138278A patent/JPH0749152B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62296959A (en) | 1987-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2513849B2 (en) | Pressure sensor and manufacturing method thereof | |
| US5056702A (en) | Method of manufacturing a semiconductor device | |
| JP2548487B2 (en) | High-heat-resistant and vacuum-resistant insulating component hole through connection and method for forming the through connection | |
| JPH0749277A (en) | Pressure sensor and manufacture thereof | |
| JPH0749152B2 (en) | Method for manufacturing envelope of rectifying element | |
| JPS59232692A (en) | Brazing filler metal for joining ceramics and metal or the like and composite body composed of ceramics and metal or the like using said brazing filler metal | |
| JP2752079B2 (en) | Method of manufacturing airtight ceramic container | |
| JPH08253373A (en) | Production of vacuum airtight vessel sealant, vacuum airtight vessel, and ceramic-metal junction body | |
| JP3706606B2 (en) | Package for storing semiconductor elements | |
| GB2101401A (en) | Glass encapsulated semiconductor device | |
| JP2003288867A (en) | Ceramic terminal | |
| JP2851881B2 (en) | Jointed body of alumina ceramics and iron-nickel alloy and joining method thereof | |
| JP3872379B2 (en) | Package for housing semiconductor element and manufacturing method thereof | |
| JP3388617B2 (en) | Thyristor container manufacturing method | |
| JP2818210B2 (en) | Jointed body of alumina ceramics and iron-nickel alloy and joining method thereof | |
| JP2848867B2 (en) | Jointed body of alumina ceramics and iron-nickel alloy and joining method thereof | |
| JP3607553B2 (en) | Metal-ceramic bonded body and manufacturing method thereof | |
| JPH05160284A (en) | Semiconductor device containing package | |
| JP2631397B2 (en) | Package for storing semiconductor elements | |
| KR910001351B1 (en) | Method for producing vacuum valve used ceramic vessel | |
| JPS5821424B2 (en) | Method for manufacturing semiconductor material supporting substrate | |
| JPH0752626B2 (en) | Magnetron for microwave oven | |
| JP2003133465A (en) | Hermetically sealed package and device employing it | |
| JP2642386B2 (en) | Vacuum valve and method of manufacturing the same | |
| JP2022054717A (en) | Ceramic sealing component and manufacturing method thereof |