JPH0745576A - Wafer cleaning device and cleaning of wafer - Google Patents
Wafer cleaning device and cleaning of waferInfo
- Publication number
- JPH0745576A JPH0745576A JP19019093A JP19019093A JPH0745576A JP H0745576 A JPH0745576 A JP H0745576A JP 19019093 A JP19019093 A JP 19019093A JP 19019093 A JP19019093 A JP 19019093A JP H0745576 A JPH0745576 A JP H0745576A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cleaning
- cleaning liquid
- tank
- rotating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ウエハ洗浄装置及びウ
エハ洗浄方法に関し、特に、ダイシング直後のウエハの
洗浄に好適なウエハ洗浄装置及びウエハ洗浄方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning apparatus and a wafer cleaning method, and more particularly to a wafer cleaning apparatus and a wafer cleaning method suitable for cleaning a wafer immediately after dicing.
【０００２】[0002]
【従来の技術】ウエハ内には多数のチップが整然と縦横
に並んでおり、互いに隣合うチップの間にはスクライブ
線と呼ばれる間隙が形成されている。ウエハを個々のチ
ップに分離するためのダイシングでは、粘着剤の付いた
ビニールシートにウエハを貼り付け、約２５℃の冷却液
をかけながら高速回転するブレードでスクライブ線沿い
に切断し、多数のチップを互いに分離する。ビニールシ
ートは切断されないため、ビニールシートに張り付いた
状態で互いに分離した多数のチップが得られる。ダイシ
ング中は、シリコン屑等のごみが発生しウエハが汚れる
が、ウエハ切断中にウエハにかけられる洗浄液だけで
は、ウエハの汚れを落とすことができない。このため、
ダイシングされたウエハはダイシング直後に洗浄され
る。2. Description of the Related Art A large number of chips are arranged side by side vertically and horizontally in a wafer, and a gap called a scribe line is formed between adjacent chips. In dicing to separate the wafer into individual chips, the wafer is attached to a vinyl sheet with an adhesive, and it is cut along the scribe line with a blade that rotates at high speed while applying a cooling liquid of about 25 ° C Are separated from each other. Since the vinyl sheet is not cut, it is possible to obtain a large number of chips separated from each other while being stuck to the vinyl sheet. During dicing, dust such as silicon chips is generated and the wafer is contaminated. However, the cleaning liquid applied to the wafer during the cutting of the wafer cannot remove the contamination of the wafer. For this reason,
The diced wafer is washed immediately after dicing.
【０００３】このダイシング直後のウエハ洗浄方法とし
ては、ダイシングされたウエハをベルヌイチャックで吸
引して洗浄装置に自動搬送し、洗浄装置でウエハを高速
回転させると共に表面に洗浄水を吹付けることにより洗
浄する方法が知られている（特公昭６２−６３４４号公
報参照）。この従来の洗浄方法では、ピンセット等でウ
エハを保持せずに自動搬送により洗浄装置にウエハを搬
送するためウエハが欠けるチッピング等は防止でき、ま
た、ウエハに付着しているシリコン屑等の汚れを洗浄水
の吹付けにより減少させることができる。As a method for cleaning the wafer immediately after the dicing, the wafer which has been diced is sucked by a Bernoulli chuck and automatically transferred to a cleaning device, and the cleaning device rotates the wafer at a high speed and sprays cleaning water on the surface. A method of doing so is known (see Japanese Patent Publication No. 62-6344). In this conventional cleaning method, the wafer is transferred to the cleaning device by automatic transfer without holding the wafer with tweezers or the like, so that chipping or the like of the wafer can be prevented, and dirt such as silicon debris attached to the wafer can be prevented. It can be reduced by spraying wash water.
【０００４】[0004]
【発明が解決しようとする課題】しかし、高速回転して
いるウエハに洗浄水を吹付けるとウエハ近傍に噴霧状の
水蒸気が大量に発生するため、大容量の排気ダクトや水
蒸気の飛散を防止する飛散防止壁が洗浄装置の周囲に必
要となる。また、ウエハは高速回転しているため、ウエ
ハ表面に吹き付けられた洗浄水で跳ね飛ばされたシリコ
ン屑等が飛散防止壁に当たって跳ね返り、再びウエハ表
面に付着するおそれがある。このため、ウエハ表面のシ
リコン屑等を十分除去することができないことがあると
いう問題がある。However, when cleaning water is sprayed on a wafer that is rotating at a high speed, a large amount of atomized steam is generated in the vicinity of the wafer, so that a large-capacity exhaust duct and scattering of steam are prevented. A shatterproof wall is required around the cleaning device. Further, since the wafer is rotating at a high speed, there is a possibility that silicon debris or the like spattered by the cleaning water sprayed on the wafer surface hits the scattering prevention wall and bounces back and adheres to the wafer surface again. Therefore, there is a problem in that it may not be possible to sufficiently remove silicon debris and the like on the wafer surface.
【０００５】本発明は、上記事情に鑑み、ウエハ表面の
汚れを十分に除去できるウエハ洗浄装置及びウエハ洗浄
方法を提供することを目的とする。In view of the above circumstances, it is an object of the present invention to provide a wafer cleaning apparatus and a wafer cleaning method capable of sufficiently removing dirt on the wafer surface.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
のウエハ洗浄装置は、ウエハを洗浄するための洗浄液が
貯えられる洗浄槽と、該洗浄槽の中にウエハを保持した
状態で該ウエハを回転させるウエハ回転機とを備えたこ
とを特徴とするものである。ここで、洗浄槽に洗浄液を
供給する洗浄液供給管を設け、さらに洗浄槽の底部及び
上部双方に洗浄液排出管を設けることが好ましい。ま
た、洗浄液供給管は、ウエハの回転に対抗する方向に洗
浄液を噴出するように構成することが好ましい。さら
に、ウエハ回転機は、ウエハを自転させると共にウエハ
の自転域から離れた所定の回転軸の周囲を公転させる回
転軸を備えていることが好ましい。さらにまた、洗浄槽
内の洗浄液の比抵抗を測定する比抵抗測定装置を洗浄槽
に設けることが好ましい。A wafer cleaning apparatus for achieving the above object comprises a cleaning tank in which a cleaning liquid for cleaning a wafer is stored, and a wafer held in the cleaning tank for cleaning the wafer. A wafer rotating machine for rotating the wafer is provided. Here, it is preferable that a cleaning liquid supply pipe for supplying the cleaning liquid to the cleaning tank is provided, and further a cleaning liquid discharge pipe is provided at both a bottom portion and an upper portion of the cleaning tank. Further, it is preferable that the cleaning liquid supply pipe is configured to eject the cleaning liquid in a direction opposite to the rotation of the wafer. Further, it is preferable that the wafer rotating machine includes a rotation shaft that rotates the wafer and revolves around a predetermined rotation shaft that is separated from the rotation region of the wafer. Furthermore, it is preferable to provide a specific resistance measuring device for measuring the specific resistance of the cleaning liquid in the cleaning tank in the cleaning tank.
【０００７】また、上記目的を達成するためのウエハ洗
浄方法は、洗浄槽に貯えられた洗浄液中でウエハを回転
させると共に前記ウエハの回転に対抗する方向に洗浄液
を噴出させることによりウエハを洗浄することを特徴と
するものである。ここで、ＣＯ2 バブル発生機を洗浄槽
の下方に設け、洗浄槽の底部からＣＯ2 バブルを洗浄液
に供給することが好ましい。また、ウエハを傾斜させた
状態で回転させることが好ましい。さらに、洗浄液の温
度を３０℃以上にして洗浄することが好ましい。Further, in a wafer cleaning method for achieving the above object, the wafer is cleaned by rotating the wafer in a cleaning solution stored in a cleaning tank and ejecting the cleaning solution in a direction opposite to the rotation of the wafer. It is characterized by that. Here, it is preferable to provide a CO 2 bubble generator below the cleaning tank and supply the CO 2 bubble to the cleaning liquid from the bottom of the cleaning tank. Further, it is preferable to rotate the wafer in a tilted state. Furthermore, it is preferable that the temperature of the cleaning liquid is 30 ° C. or higher for cleaning.
【０００８】[0008]
【作用】本発明のウエハ洗浄装置は、洗浄液が貯えられ
る洗浄槽とこの洗浄槽の中でウエハを回転させるウエハ
回転機を備えて構成されているため、ウエハは洗浄液中
で回転されながら洗浄される。このためウエハ表面から
一旦除去されたシリコン屑等のごみが跳ね返って再びウ
エハ表面に付着することを防止でき、ごみを十分に除去
することができる。Since the wafer cleaning apparatus of the present invention comprises the cleaning tank for storing the cleaning liquid and the wafer rotating machine for rotating the wafer in the cleaning tank, the wafer is cleaned while being rotated in the cleaning liquid. It Therefore, it is possible to prevent dust such as silicon dust once removed from the wafer surface from bouncing back and adhering again to the wafer surface, and dust can be sufficiently removed.
【０００９】ここで、洗浄槽に洗浄液を供給する洗浄液
供給管を設け、さらに洗浄槽の底部及び上部双方に洗浄
液排出管を設けた場合は、比重の小さいごみは上部の洗
浄液排出管から排出され、比重の大きいごみは底部の洗
浄液排出管から排出される一方、新たな洗浄液を洗浄液
供給管から供給できるため、洗浄効果が向上しごみを一
層十分に除去することができる。If a cleaning liquid supply pipe for supplying the cleaning liquid to the cleaning tank is provided and further a cleaning liquid discharge pipe is provided at both the bottom and the upper portion of the cleaning tank, dust with a small specific gravity is discharged from the upper cleaning liquid discharge pipe. While the dust having a large specific gravity is discharged from the bottom cleaning liquid discharge pipe, a new cleaning liquid can be supplied from the cleaning liquid supply pipe, so that the cleaning effect is improved and the dust can be removed more sufficiently.
【００１０】また、ウエハの回転に対抗する方向に洗浄
液を噴出するように洗浄液供給管を構成した場合は、ウ
エハ表面と洗浄液の接触抵抗が増大しごみが離脱しやす
くなるため洗浄効果が一層向上する。さらに、ウエハを
自転させると共にウエハの自転域から離れた所定の回転
軸の周囲を公転させる回転軸をウエハ回転機に備えた場
合は、様々な方向からウエハ表面に洗浄液が当たるため
洗浄効果が一層向上する。Further, when the cleaning liquid supply pipe is constructed so as to eject the cleaning liquid in the direction opposite to the rotation of the wafer, the contact resistance between the wafer surface and the cleaning liquid increases and dust is easily separated, so that the cleaning effect is further improved. To do. Furthermore, when the wafer rotating machine is equipped with a rotating shaft that rotates the wafer on its own axis and revolves around a predetermined rotating axis away from the rotation area of the wafer, the cleaning liquid is applied to the wafer surface from various directions to further enhance the cleaning effect. improves.
【００１１】さらにまた、洗浄槽内の洗浄液の比抵抗を
測定する比抵抗測定装置を洗浄槽に設けた場合は、洗浄
液の比抵抗を測定することにより洗浄液の汚れを測定で
き、比抵抗が小さくなるほどウエハが十分に洗浄された
と判断できる。本発明のウエハ洗浄方法によれば、ウエ
ハの回転に対抗する方向に噴出している洗浄液中でウエ
ハが洗浄されるため、ごみを十分に除去することができ
る。Furthermore, when a specific resistance measuring device for measuring the specific resistance of the cleaning liquid in the cleaning tank is provided in the cleaning tank, the contamination of the cleaning liquid can be measured by measuring the specific resistance of the cleaning liquid, and the specific resistance is small. It can be judged that the wafer has been sufficiently cleaned. According to the wafer cleaning method of the present invention, since the wafer is cleaned in the cleaning liquid jetted in the direction opposite to the rotation of the wafer, dust can be sufficiently removed.
【００１２】ここで、洗浄槽の底部からＣＯ2 バブルを
洗浄液に供給する場合は、静電破壊防止効果を十分に発
揮させることができる。また、ウエハを傾斜させた状態
で回転させる場合は、ウエハ表面と洗浄液の接触抵抗が
増大しごみが離脱しやすくなるため洗浄効果が一層向上
する。さらに、洗浄液の温度を３０℃以上にし、ビニー
ルシートに張り付いた状態で互いに分離した多数のチッ
プを洗浄する場合、ビニールシートが膨張することによ
り各チップ同士の間隙が広がるため、チップの周辺の汚
れがよく除去でき、洗浄領域を広げることができる。When CO 2 bubbles are supplied to the cleaning liquid from the bottom of the cleaning tank, the effect of preventing electrostatic breakdown can be sufficiently exerted. Further, when the wafer is rotated in a tilted state, the contact resistance between the wafer surface and the cleaning liquid increases, and the dust easily separates, so that the cleaning effect is further improved. Furthermore, when the temperature of the cleaning liquid is set to 30 ° C. or higher and a large number of chips separated from each other are attached to the vinyl sheet, the vinyl sheet expands to widen the gap between the chips, so Dirt can be removed well and the cleaning area can be expanded.
【００１３】[0013]
【実施例】以下、本発明のウエハ洗浄装置及びウエハ洗
浄方法の一実施例を説明する。ここでは、ダイシング直
後のウエハの洗浄に本発明を適用した例を示し、図１は
ダイシング装置とウエハ洗浄装置を配列した状態を示す
平面図、図２はビニールシートに固定されたウエハを示
す、（ａ）は平面図、（ｂ）は（ａ）のＡ−Ａ断面図で
ある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the wafer cleaning apparatus and wafer cleaning method of the present invention will be described below. Here, an example in which the present invention is applied to cleaning a wafer immediately after dicing is shown, FIG. 1 is a plan view showing a state in which a dicing device and a wafer cleaning device are arranged, and FIG. 2 shows a wafer fixed to a vinyl sheet. (A) is a plan view and (b) is a sectional view taken along line AA of (a).
【００１４】先ず、ウエハのダイシングと洗浄の概略に
ついて説明する。ウエハ１０は、厚さ２〜３ｍｍのステ
ンレスフレーム１２に貼り付けられたビニールシート１
４の中央部に粘着材で固定されており、この固定された
状態でウエハカセット（図示せず）に入れられローダ１
６にセッティングされる。ウエハカセットにセッティン
グされたウエハ１０は、ダイシングが行われる第１ステ
ージ１８に自動搬送され、この第１ステージ１８では約
２５℃の冷却液をウエハ１０に供給しながら高速回転ブ
レードによりウエハ１０のダイシングが行われる。ダイ
シングされたウエハ１０は、ベルヌイチャックで吸引さ
れて第２ステージ２０に自動搬送され、第２ステージ２
０ではウエハ洗浄装置３０によりウエハの洗浄と乾燥が
行われる。洗浄、乾燥が終了したウエハはアンローダ２
２に移される。First, an outline of wafer dicing and cleaning will be described. The wafer 10 is a vinyl sheet 1 attached to a stainless frame 12 having a thickness of 2 to 3 mm.
4 is fixed to the central portion of the loader 4 with an adhesive material, and in this fixed state, the loader 1 is loaded into a wafer cassette (not shown).
Set to 6. The wafer 10 set in the wafer cassette is automatically transferred to the first stage 18 where dicing is performed. At this first stage 18, while the cooling liquid of about 25 ° C. is supplied to the wafer 10, the wafer 10 is diced by the high-speed rotating blade. Is done. The diced wafer 10 is sucked by a Bernoulli chuck and automatically conveyed to the second stage 20.
At 0, the wafer cleaning device 30 cleans and dries the wafer. Wafers that have been cleaned and dried are unloader 2
Moved to 2.
【００１５】次に、図３を参照してウエハ洗浄装置３０
の構造を説明する。図３はウエハ洗浄装置の概略構成を
示す説明図である。ウエハ洗浄装置３０は、洗浄液が貯
えられる洗浄槽４０と、ウエハを保持した状態でこのウ
エハを回転させるウエハ回転機６０を備えて構成されて
いる。洗浄槽４０には洗浄液を供給する洗浄液供給管４
２が設けられており、この洗浄液供給管４２からはウエ
ハの回転に対抗する方向に洗浄液が噴出する。また、洗
浄槽４０の底部及び上部双方には洗浄液排出管４４及び
４６が複数設けられており、比重の小さいごみは上部の
洗浄液排出管４６から排出され、比重の大きいごみは底
部の洗浄液排出管４４から排出されるように構成されて
いる。洗浄液排出管４４の下方にはダンパ４８が設けら
れており、このダンパ４８を調整することにより洗浄液
の排出量が調整される。洗浄槽４０の下方にはＣＯ2 ガ
ス供給器（図示せず）が備えられており、ガス供給管５
０を経由して洗浄槽４０の底部から洗浄液に供給される
ように構成されている。さらに洗浄槽４０には、洗浄液
の比抵抗を測定する比抵抗測定装置５２が設けられてお
り、洗浄液の比抵抗を測定することにより洗浄液の汚れ
を測定できるように構成されている。Next, referring to FIG. 3, a wafer cleaning device 30
The structure of is explained. FIG. 3 is an explanatory diagram showing a schematic configuration of the wafer cleaning apparatus. The wafer cleaning device 30 includes a cleaning tank 40 that stores a cleaning liquid, and a wafer rotator 60 that rotates the wafer while holding the wafer. Cleaning liquid supply pipe 4 for supplying the cleaning liquid to the cleaning tank 40
2 is provided, and the cleaning liquid is ejected from the cleaning liquid supply pipe 42 in a direction opposite to the rotation of the wafer. Further, a plurality of cleaning liquid discharge pipes 44 and 46 are provided at both the bottom and the upper part of the cleaning tank 40, and dust having a small specific gravity is discharged from the cleaning liquid discharge pipe 46 at the upper part, and dust having a large specific gravity is discharged to the cleaning liquid discharge pipe at the bottom. It is configured to be discharged from 44. A damper 48 is provided below the cleaning liquid discharge pipe 44, and the discharge amount of the cleaning liquid is adjusted by adjusting the damper 48. A CO 2 gas supply device (not shown) is provided below the cleaning tank 40, and the gas supply pipe 5
The cleaning liquid is supplied from the bottom of the cleaning tank 40 via 0. Further, the cleaning tank 40 is provided with a specific resistance measuring device 52 for measuring the specific resistance of the cleaning liquid, and is configured so that the dirt of the cleaning liquid can be measured by measuring the specific resistance of the cleaning liquid.
【００１６】ウエハ回転機６０は、真空を利用してウエ
ハを保持するウエハ保持部６２と、このウエハ保持部６
２を支え回転させる回転軸６４を備えて構成されてい
る。ウエハ保持部６２のウエハ保持面には多数の孔（図
示せず）が形成されており、この孔は真空パイプ６６を
介して真空装置（図示せず）に接続されている。回転軸
６４は回転軸伸縮機６８により伸縮自在に構成されてお
り、第１ステージ１８（図１参照）から搬送されてきた
ウエハを受け取る際は、洗浄液面を越えた、破線で示さ
れる位置までウエハ保持部６２を上昇させ、洗浄の際
は、洗浄液中までウエハ保持部６２を降下させる。ま
た、回転軸６４はモータ７０により駆動され、ウエハ保
持部６２に保持されたウエハを自転させると共にウエハ
の自転域から離れた所定の回転軸の周囲を公転させ、ウ
エハを傾斜させた状態で回転させることもできるように
構成されている。The wafer rotating machine 60 includes a wafer holder 62 for holding a wafer by utilizing vacuum, and the wafer holder 6
It is configured to include a rotating shaft 64 that supports and rotates the device 2. A large number of holes (not shown) are formed on the wafer holding surface of the wafer holding portion 62, and these holes are connected to a vacuum device (not shown) via a vacuum pipe 66. The rotary shaft 64 is configured to be expandable / contractible by a rotary shaft expander / retractor 68, and when the wafer transferred from the first stage 18 (see FIG. 1) is received, the rotary shaft 64 extends beyond the cleaning liquid surface to a position indicated by a broken line. The wafer holder 62 is raised, and during cleaning, the wafer holder 62 is lowered into the cleaning liquid. The rotation shaft 64 is driven by a motor 70 to rotate the wafer held by the wafer holding portion 62 and revolve around a predetermined rotation shaft separated from the rotation region of the wafer to rotate the wafer in a tilted state. It is also configured to be able to.
【００１７】次に、第１ステージ１８（図１参照）でダ
イシングされたウエハがウエハ洗浄装置３０で洗浄され
る工程を説明する。第１ステージ１８（図１参照）でダ
イシングされたウエハ１０は、図２に示される状態のま
ま、洗浄液面よりも高い位置にあるウエハ保持部６２に
搬送されこのウエハ保持部６２に保持される。ウエハ１
０を保持したウエハ保持部６２は回転軸６４の下降に伴
って洗浄液中に下降し、これによりウエハ１０は洗浄液
中に浸漬する。ウエハ保持部６２は洗浄液中で自転する
とともに所定軸の周囲を公転し、一方、洗浄液供給管４
２からはウエハの自転に対抗する方向に洗浄液が噴出
し、これによりウエハ表面と洗浄液の接触抵抗が増大す
ると共に様々な方向からウエハ表面に洗浄液が当たるた
め、ウエハの洗浄が十分に行われる。また、洗浄液の温
度は約３０℃であり、このため、ビニールシート１４
（図２参照）が膨張し互いに隣り合うチップ同士の間隙
が広がるため、チップの周辺の汚れをよく除去でき、洗
浄領域を広げることができる。さらに、ウエハを洗浄中
に、ＣＯ2 ガス供給管５０を経由して洗浄槽４０の底部
から洗浄液にＣＯ2 ガスを供給することにより、ウエハ
の静電破壊を防止することができる。ウエハの洗浄が終
了したか否かは、比抵抗測定装置５２で洗浄液の比抵抗
を測定することにより判断でき、例えば比抵抗が１ＭΩ
ｃｍになると洗浄終了とする。これにより、複数のウエ
ハが均一な清浄度になるように洗浄できる。ウエハの洗
浄が終了後は洗浄液を排出し、ウエハ保持部６２を高速
回転することによりウエハを乾燥する。Next, a process of cleaning the wafer diced by the first stage 18 (see FIG. 1) by the wafer cleaning device 30 will be described. The wafer 10 that has been diced by the first stage 18 (see FIG. 1) is transferred to the wafer holding section 62 at a position higher than the cleaning liquid surface and held by the wafer holding section 62 in the state shown in FIG. . Wafer 1
The wafer holding unit 62 holding 0 moves down into the cleaning liquid as the rotating shaft 64 moves down, whereby the wafer 10 is immersed in the cleaning liquid. The wafer holder 62 rotates in the cleaning liquid and revolves around a predetermined axis, while the cleaning liquid supply pipe 4
The cleaning liquid is ejected from 2 in a direction opposite to the rotation of the wafer, thereby increasing the contact resistance between the wafer surface and the cleaning liquid and contacting the wafer surface from various directions, so that the wafer is sufficiently cleaned. Moreover, the temperature of the cleaning liquid is about 30 ° C. Therefore, the vinyl sheet 14
(See FIG. 2) expands to widen the gap between the chips adjacent to each other, so that stains around the chips can be removed well and the cleaning region can be expanded. Furthermore, by supplying CO 2 gas to the cleaning liquid from the bottom of the cleaning tank 40 via the CO 2 gas supply pipe 50 during cleaning of the wafer, electrostatic damage of the wafer can be prevented. Whether or not the cleaning of the wafer is completed can be judged by measuring the specific resistance of the cleaning liquid with the specific resistance measuring device 52. For example, the specific resistance is 1 MΩ.
When it reaches cm, the cleaning is finished. As a result, the plurality of wafers can be cleaned so as to have a uniform cleanliness. After the cleaning of the wafer is completed, the cleaning liquid is discharged and the wafer holding unit 62 is rotated at a high speed to dry the wafer.
【００１８】上述した例では、ウエハを第２ステージに
搬送する際に、ウエハ保持部を洗浄液面より高くした
が、洗浄液が無い状態で第２ステージに搬送し、その後
洗浄液を供給してもよい。In the above-mentioned example, when the wafer is transferred to the second stage, the wafer holding part is raised above the cleaning liquid surface, but it may be transferred to the second stage without the cleaning liquid and then the cleaning liquid may be supplied. .
【００１９】[0019]
【発明の効果】以上説明したように本発明のウエハ洗浄
装置及びウエハ洗浄方法によれば、洗浄槽に貯えられた
洗浄液中でウエハを回転させて洗浄するため、十分にご
みを除去することができ洗浄効果が向上する。As described above, according to the wafer cleaning apparatus and the wafer cleaning method of the present invention, since the wafer is rotated and cleaned in the cleaning liquid stored in the cleaning tank, the dust can be sufficiently removed. The cleaning effect is improved.
【図１】ダイシング装置とウエハ洗浄装置を配列した状
態を示す平面図である。FIG. 1 is a plan view showing a state in which a dicing device and a wafer cleaning device are arranged.
【図２】ビニールシートに固定されたウエハを示す、
（ａ）は平面図、（ｂ）は（ａ）のＡ−Ａ断面図であ
る。FIG. 2 shows a wafer secured to a vinyl sheet,
(A) is a plan view and (b) is a sectional view taken along line AA of (a).
【図３】本発明のウエハ洗浄装置の一実施例の概略構成
を示す説明図である。FIG. 3 is an explanatory diagram showing a schematic configuration of an embodiment of a wafer cleaning apparatus of the present invention.
３０ ウエハ洗浄装置 ４０ 洗浄槽 ４２ 洗浄液供給管 ４４，４６ 洗浄液排出管 ５０ ＣＯ2 ガス供給管 ５２ 比抵抗測定装置 ６０ ウエハ回転機 ６２ ウエハ保持部 ６４ 回転軸30 Wafer Cleaning Device 40 Cleaning Tank 42 Cleaning Liquid Supply Pipes 44, 46 Cleaning Liquid Discharge Pipe 50 CO 2 Gas Supply Pipe 52 Resistivity Measuring Device 60 Wafer Rotating Machine 62 Wafer Holding Unit 64 Rotating Shaft
Claims (5)
れる洗浄槽と、 該洗浄槽の中にウエハを保持した状態で該ウエハを回転
させるウエハ回転機とを備えたことを特徴とするウエハ
洗浄装置。1. A wafer cleaning device, comprising: a cleaning tank for storing a cleaning liquid for cleaning a wafer; and a wafer rotator for rotating the wafer while holding the wafer in the cleaning tank. apparatus.
する洗浄液供給管と、該洗浄槽の底部及び上部双方に設
けられた洗浄液排出管とを備えたことを特徴とする請求
項１記載のウエハ洗浄装置。2. The cleaning tank is provided with a cleaning solution supply pipe for supplying a cleaning solution to the cleaning tank and a cleaning solution discharge pipe provided at both a bottom portion and an upper portion of the cleaning tank. The wafer cleaning apparatus described.
抗する方向に洗浄液を噴出するものであることを特徴と
する請求項２記載のウエハ洗浄装置。3. The wafer cleaning apparatus according to claim 2, wherein the cleaning liquid supply pipe ejects the cleaning liquid in a direction opposed to the rotation of the wafer.
ると共にウエハの自転域から離れた所定の回転軸の周囲
を公転させる回転軸を備えていることを特徴とする請求
項１記載のウエハ洗浄装置。4. The wafer cleaning apparatus according to claim 1, wherein the wafer rotating machine includes a rotation shaft that rotates the wafer and revolves around a predetermined rotation shaft separated from a rotation region of the wafer. apparatus.
回転させると共に前記ウエハの回転に対抗する方向に洗
浄液を噴出させることによりウエハを洗浄することを特
徴とするウエハ洗浄方法。5. A wafer cleaning method comprising rotating a wafer in a cleaning liquid stored in a cleaning tank and ejecting the cleaning liquid in a direction opposite to the rotation of the wafer to clean the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19019093A JPH0745576A (en) | 1993-07-30 | 1993-07-30 | Wafer cleaning device and cleaning of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19019093A JPH0745576A (en) | 1993-07-30 | 1993-07-30 | Wafer cleaning device and cleaning of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0745576A true JPH0745576A (en) | 1995-02-14 |
Family
ID=16253955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19019093A Withdrawn JPH0745576A (en) | 1993-07-30 | 1993-07-30 | Wafer cleaning device and cleaning of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0745576A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100757846B1 (en) * | 2006-03-29 | 2007-09-11 | 세메스 주식회사 | Apparatus for treating substrate |
-
1993
- 1993-07-30 JP JP19019093A patent/JPH0745576A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100757846B1 (en) * | 2006-03-29 | 2007-09-11 | 세메스 주식회사 | Apparatus for treating substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5868866A (en) | Method of and apparatus for cleaning workpiece | |
| JP3414916B2 (en) | Substrate processing apparatus and method | |
| US6990704B2 (en) | Substrate cleaning apparatus and substrate cleaning method | |
| JPH0568092B2 (en) | ||
| JP2008028008A (en) | Device, system, and method for substrate treatment | |
| JP2007194367A (en) | Washing apparatus, and dicing equipment provided therewith | |
| JP2002057138A (en) | Rotary wafer treatment device | |
| JP2018113393A (en) | Wafer cleaning device | |
| JPH10308374A (en) | Method and equipment for cleaning | |
| JP4255702B2 (en) | Substrate processing apparatus and method | |
| JPH0786218A (en) | Substrate cleaner | |
| JP3425895B2 (en) | Rotary substrate drying apparatus and drying method | |
| JPH08255776A (en) | Cleaning apparatus and cleaning method | |
| JPH10199852A (en) | Rotary substrate treatment device | |
| JP2007311450A (en) | Protection film covering apparatus | |
| JPH0745576A (en) | Wafer cleaning device and cleaning of wafer | |
| JPH09162159A (en) | Rotary substrate dryer | |
| JP2003017452A (en) | Method and apparatus for treating substrate | |
| JP2001168067A (en) | Dicing apparatus | |
| JP7221375B2 (en) | Substrate processing brush cleaning method and substrate processing apparatus | |
| JP6775638B2 (en) | Substrate cleaning equipment | |
| JP2000208466A (en) | Method and apparatus for treating substrate | |
| WO2020095582A1 (en) | Processing cup unit and substrate processing device | |
| JPH08213352A (en) | Wafer cleaning equipment | |
| JP2004095771A (en) | Semiconductor wafer grinding machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001003 |