JPH0745565A - Polishing device of semiconductor wafer - Google Patents
Polishing device of semiconductor waferInfo
- Publication number
- JPH0745565A JPH0745565A JP18589293A JP18589293A JPH0745565A JP H0745565 A JPH0745565 A JP H0745565A JP 18589293 A JP18589293 A JP 18589293A JP 18589293 A JP18589293 A JP 18589293A JP H0745565 A JPH0745565 A JP H0745565A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor wafer
- plate
- abrasive
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウェハの研磨技
術、更には研磨布による機械研磨及び研磨剤による化学
研磨とを併用した研磨装置に適用して特に有効な技術に
関し、例えば大口径半導体ウェハの研磨に利用して有用
な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for polishing semiconductor wafers, and more particularly to a technique which is particularly effective when applied to a polishing apparatus that uses both mechanical polishing with a polishing cloth and chemical polishing with a polishing agent. The present invention relates to a technique useful for polishing a wafer.
【０００２】[0002]
【従来の技術】半導体ウェハを研磨プレートに貼付け、
この研磨プレートを研磨ヘッドにセットし、研磨ヘッド
を加圧シリンダにて定盤上の研磨布に当接させた状態
で、当該定盤を回転させ、もって、半導体ウェハを鏡面
研磨する技術が公知である。かかる構成の研磨装置にあ
っては、半導体ウェハと研磨布との間に研磨剤が供給さ
れ、研磨布による機械研磨と、研磨剤による化学研磨が
併用されて、ウェハの平坦化が図られている。又、上記
研磨剤は、研磨時の冷却材としても用いられる。しかし
て、上記研磨剤を定盤上に供給するに当たっては、定盤
の中央部分に設けられた研磨剤供給通路（図１参照）よ
り該定盤中央部分に研磨剤を供給し、定盤の回転に伴っ
て生じる遠心力を使って、該研磨剤を定盤の外方に向か
って供給するようにしている。このように研磨剤が外方
に供給されることにより、当該定盤全面に研磨剤が供給
されて、当該半導体ウェハの鏡面研磨が行われる。2. Description of the Related Art A semiconductor wafer is attached to a polishing plate,
A technique is known in which this polishing plate is set on a polishing head, and the polishing plate is rotated by pressing the polishing head against the polishing cloth on the polishing plate by a pressurizing cylinder, thereby mirror-polishing the semiconductor wafer. Is. In the polishing apparatus having such a configuration, the polishing agent is supplied between the semiconductor wafer and the polishing cloth, and the mechanical polishing by the polishing cloth and the chemical polishing by the polishing agent are used together to flatten the wafer. There is. Further, the above-mentioned polishing agent is also used as a coolant during polishing. When supplying the above polishing agent onto the surface plate, the polishing agent is supplied to the center portion of the surface plate from the polishing agent supply passage (see FIG. 1) provided in the center portion of the surface plate, The abrasive is supplied toward the outside of the surface plate by using the centrifugal force generated by the rotation. By thus supplying the polishing agent to the outside, the polishing agent is supplied to the entire surface of the surface plate, and the mirror polishing of the semiconductor wafer is performed.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
た技術には、次のような問題のあることが本発明者らに
よってあきらかにされた。即ち、上記のように定盤の中
心部分ただ一箇所から研磨剤を供給する手法では、定盤
の全面に同一条件（供給量、研磨剤温度等）で研磨剤を
満遍なく供給することができない。特に、研磨ヘッドに
よって定盤主面に所定の圧力にて加圧される半導体ウェ
ハに関しては、研磨剤がウェハの外周部分に行き渡った
時点より、その摩擦熱によって温度が上昇し、ウェハ内
部では供給された研磨剤の温度上昇が生じてしまう。し
かして、上記研磨剤の温度分布の偏りは、研磨速度の差
異を生じさせることとなり、特に大口径の半導体ウェハ
において温度分布の偏りが大きく、その鏡面研磨時の高
平坦化を達成することが困難となる。However, the present inventors have clarified that the above-mentioned technique has the following problems. That is, with the method of supplying the abrasive from only one central portion of the surface plate as described above, the abrasive cannot be uniformly supplied to the entire surface of the surface plate under the same conditions (supply amount, temperature of the abrasive, etc.). In particular, for semiconductor wafers where the polishing head pressurizes the main surface of the surface plate with a predetermined pressure, the temperature rises due to frictional heat from the time when the polishing agent reaches the outer peripheral portion of the wafer, and the temperature inside the wafer is supplied. As a result, the temperature of the removed polishing agent rises. Therefore, the deviation of the temperature distribution of the polishing agent causes a difference in the polishing rate, and the deviation of the temperature distribution is large particularly in a large-diameter semiconductor wafer, and it is possible to achieve high flatness during mirror polishing. It will be difficult.
【０００４】本発明は、かかる事情に鑑みてなされたも
ので、半導体ウェハの研磨装置において、研磨剤を同一
条件（供給量、研磨剤温度）にて、当該ウェハと定盤と
の間に供給することによって、半導体ウェハ全面の温度
条件を一定にして、高平坦化を得るようにした半導体ウ
ェハの研磨装置を提供することをその主たる目的とす
る。この発明の前記ならびにそのほかの目的と新規な特
徴については、本明細書の記述および添附図面から明ら
かになるであろう。The present invention has been made in view of the above circumstances. In a semiconductor wafer polishing apparatus, a polishing agent is supplied between the wafer and a surface plate under the same conditions (supply amount, polishing agent temperature). The main object of the invention is to provide a polishing apparatus for a semiconductor wafer in which the temperature condition of the entire surface of the semiconductor wafer is kept constant and a high flatness is obtained. The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【０００５】[0005]
【課題を解決するための手段】本願において開示される
発明のうち代表的なものの概要を説明すれば、下記のと
おりである。即ち、本発明の半導体ウェハの研磨装置で
は、その主面に半導体ウェハが接着される研磨プレート
に、当該主面に開口する研磨剤供給孔を設け、研磨工程
において、該研磨剤供給孔より研磨剤を供給するように
した。The typical ones of the inventions disclosed in the present application will be outlined below. That is, in the semiconductor wafer polishing apparatus of the present invention, a polishing plate to which a semiconductor wafer is bonded is provided on the main surface thereof with an abrasive supply hole opening to the main surface, and in the polishing step, polishing is performed from the abrasive supply hole. The agent was supplied.
【０００６】[0006]
【作用】研磨プレートに貼付けられた半導体ウェハに対
し、当該研磨剤供給通路から研磨剤が供給されるため、
研磨剤による冷却効果が、半導体ウェハの全面で均一に
得られる。Since the polishing agent is supplied from the polishing agent supply passage to the semiconductor wafer attached to the polishing plate,
The cooling effect of the abrasive can be uniformly obtained over the entire surface of the semiconductor wafer.
【０００７】[0007]
【実施例】以下、本発明の一実施例を添付図面を参照し
て説明する。図１は、実施例の半導体ウェハの研磨装置
の要部を示す側面図である。この図に示すように、研磨
装置１０は、研磨布が貼付けられた定盤１、研磨プレー
ト４がセットされた研磨ヘッド２、該研磨ヘッド２を定
盤１に所定の圧力にて加圧する加圧シリンダ３を具えて
いる。このうち定盤１は、回転軸Ｌ１を中心に、図外の
回転駆動装置によって一定方向に所定の回転速度にて回
動されるようになっている。又、研磨ヘッド２は、その
軸心Ｌ２を中心に回転自在に加圧シリンダ３に取り付け
られている。又、加圧シリンダ３は、研磨装置本体の加
圧装置（図示省略）に固定され、該加圧装置の働きによ
って、上記研磨ヘッド２を所定の圧力にて定盤１に当接
させる。尚、研磨ヘッド２は、１つの定盤１に対して複
数個（例えば４つ）設けられており、該研磨ヘッド２に
は、複数枚（例えば６枚）の半導体ウェハ５，５…が貼
付けられた研磨プレート４が固定される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a side view showing a main part of a semiconductor wafer polishing apparatus according to an embodiment. As shown in this figure, the polishing apparatus 10 includes a surface plate 1 on which a polishing cloth is attached, a polishing head 2 on which a polishing plate 4 is set, and a pressure for pressing the polishing head 2 onto the surface plate 1 at a predetermined pressure. It comprises a pressure cylinder 3. Of these, the surface plate 1 is configured to be rotated about a rotation axis L1 in a certain direction at a predetermined rotation speed by a rotation driving device (not shown). The polishing head 2 is attached to the pressure cylinder 3 so as to be rotatable about its axis L2. The pressurizing cylinder 3 is fixed to a pressurizing device (not shown) of the main body of the polishing device, and the pressurizing device causes the polishing head 2 to contact the surface plate 1 at a predetermined pressure. A plurality of polishing heads 2 (for example, 4) are provided for one surface plate 1, and a plurality of polishing wafers 5 (for example, 6) are attached to the polishing head 2. The polishing plate 4 thus obtained is fixed.
【０００８】しかして、半導体ウェハ５，５…の鏡面研
磨を行うに当たっては、ウェハ５が貼付けられた研磨プ
レート４が、研磨ヘッド２にセットされると、上記した
加圧装置によって加圧シリンダ３，研磨ヘッド２が定盤
１に向かって下降される。この下降によって、半導体ウ
ェハ５が、定盤１上の研磨布６に、所定の圧力にて加圧
され、この状態で定盤１が高速回転されて、当該ウェハ
５の鏡面研磨が行われる。このとき、半導体ウェハ５と
研磨布６との間には研磨剤（矢印７で示す）が供給さ
れ、研磨布６による機械研磨と、研磨剤による化学研磨
が併用されて、ウェハ５の鏡面研磨が行われる。尚、研
磨剤は、研磨時の半導体ウェハ５の温度上昇を抑える冷
却材としても用いられる。When the semiconductor wafers 5, 5 ... Are mirror-polished, when the polishing plate 4 to which the wafer 5 is attached is set on the polishing head 2, the pressure cylinder 3 is pressed by the above-mentioned pressure device. The polishing head 2 is lowered toward the surface plate 1. By this descent, the semiconductor wafer 5 is pressed against the polishing cloth 6 on the surface plate 1 at a predetermined pressure, and in this state, the surface plate 1 is rotated at a high speed to perform mirror polishing of the wafer 5. At this time, a polishing agent (indicated by an arrow 7) is supplied between the semiconductor wafer 5 and the polishing cloth 6, and the mechanical polishing by the polishing cloth 6 and the chemical polishing by the polishing agent are used in combination to perform mirror polishing of the wafer 5. Is done. The polishing agent is also used as a coolant for suppressing the temperature rise of the semiconductor wafer 5 during polishing.
【０００９】上記構成の研磨装置１０にあっては、研磨
剤は、定盤１の中央部分に設けられた研磨剤供給管８
の、第１の研磨剤供給通路８Ａを介して供給される（図
中矢印７ａで示す）。尚、半導体ウェハの研磨が行われ
ていないときには、上記第１の研磨剤供給通路５Ａを介
して洗浄用水が供給されて、研磨布６についた研磨剤が
洗い流されるようになっている。In the polishing apparatus 10 having the above structure, the polishing agent is supplied to the polishing agent supply pipe 8 provided in the central portion of the surface plate 1.
Is supplied through the first abrasive supply passage 8A (indicated by arrow 7a in the figure). When the semiconductor wafer is not polished, cleaning water is supplied through the first polishing agent supply passage 5A so that the polishing agent on the polishing cloth 6 is washed away.
【００１０】又、研磨装置１０にあっては、各研磨ヘッ
ド毎に、当該研磨プレート４に設けられた研磨剤供給孔
４Ａを介して、研磨剤が研磨布６に供給されるようにな
っている（図中矢印７ｂで示す）。この研磨剤供給孔４
Ａは、研磨ヘッド２の中心部分に設けられた研磨剤供給
通路２Ａ、更には、加圧シリンダ３の中心部分に設けら
れた研磨剤供給通路３Ａに連通されており、これらが第
２の研磨剤供給通路を構成している。しかして、図示省
略の研磨剤供給装置から、上記した第１の研磨剤供給通
路８Ａ、及び、第２の研磨剤供給通路８を介して、半導
体ウェハ５，５…と研磨布６との間に研磨剤が満遍なく
供給される。In the polishing apparatus 10, the polishing agent is supplied to the polishing cloth 6 for each polishing head through the polishing agent supply hole 4A provided in the polishing plate 4. (Indicated by arrow 7b in the figure). This polishing agent supply hole 4
A communicates with a polishing agent supply passage 2A provided in the central portion of the polishing head 2 and further with a polishing agent supply passage 3A provided in the central portion of the pressurizing cylinder 3, which are used for the second polishing. It constitutes the agent supply passage. Then, from the polishing agent supply device (not shown), between the semiconductor wafers 5, 5 ... And the polishing cloth 6 via the first polishing agent supply passage 8A and the second polishing agent supply passage 8 described above. The polishing agent is evenly supplied.
【００１１】このように各研磨ヘッド毎に、研磨剤供給
通路を形成し、該通路を介して研磨剤を供給することに
よって、研磨工程におへる半導体ウェハ、及びこれに当
接する研磨布間の温度部分が平均化され、半導体ウェハ
の研磨速度が均一化され、ウェハの高平坦化が達成され
る。尚、同一研磨装置に設けられた複数の研磨ヘッドに
対し、各ヘッド毎に、第２の研磨剤供給通路から供給さ
れる研磨剤の量、当該研磨剤の温度、加圧値等の諸条件
を、各々別個に制御することによって、研磨ヘッド毎
に、当該半導体ウェハの研磨速度を変化させることがで
きる。換言すれば、１回の研磨工程で、研磨速度の異な
る鏡面研磨を行うことができるようになる。このとき制
御される研磨剤の量、研磨剤温度、加圧値と、半導体ウ
ェハの研磨速度との関係は、実験データ等に基いて得る
ことができる。As described above, the polishing agent supply passage is formed for each polishing head, and the polishing agent is supplied through the passage, so that the semiconductor wafer in the polishing process and the space between the polishing cloths contacting the semiconductor wafer The temperature portion of the wafer is averaged, the polishing rate of the semiconductor wafer is made uniform, and high flatness of the wafer is achieved. Incidentally, for a plurality of polishing heads provided in the same polishing apparatus, various conditions such as the amount of the polishing agent supplied from the second polishing agent supply passage, the temperature of the polishing agent, the pressure value, etc., for each head. Can be controlled separately, so that the polishing rate of the semiconductor wafer can be changed for each polishing head. In other words, mirror polishing with different polishing rates can be performed in one polishing step. The relationship between the polishing agent amount, the polishing agent temperature, the pressure value, and the polishing rate of the semiconductor wafer controlled at this time can be obtained based on experimental data and the like.
【００１２】以上本発明者によってなされた発明を実施
例に基づき具体的に説明したが、本発明は上記実施例に
限定されるものではなく、その要旨を逸脱しない範囲で
種々変更可能であることはいうまでもない。例えば、上
記実施例では、研磨工程において、第１の研磨剤供給通
路、第２の研磨剤供給通路の双方から研磨剤を供する例
について説明したが、第２の研磨剤供給通路のみから研
磨剤を供給するようにしてもよい。又、１つの研磨装置
に設けられる研磨ヘッドの数、１つの研磨ヘッドにセッ
トされる半導体ウェハの数は、上記実施例で示したもの
に限ることはない。Although the invention made by the present inventor has been specifically described based on the embodiments, the invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example, in the above embodiment, an example in which the polishing agent is supplied from both the first polishing agent supply passage and the second polishing agent supply passage in the polishing process has been described, but the polishing agent is supplied only from the second polishing agent supply passage. May be supplied. Further, the number of polishing heads provided in one polishing apparatus and the number of semiconductor wafers set in one polishing head are not limited to those shown in the above embodiment.
【００１３】以上の説明では主として本発明者によって
なされた発明をその背景となった利用分野である半導体
ウェハの研磨技術に適用した場合について説明したが、
この発明はそれに限定されるものでなく、冷却用の液体
を用いる研磨技術一般に利用することができる。In the above description, the case where the invention made by the present inventor is mainly applied to the polishing technique of the semiconductor wafer which is the field of application which is the background of the invention has been described.
The present invention is not limited to this, and can be used in general polishing techniques using a cooling liquid.
【００１４】[0014]
【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば下記
のとおりである。即ち、研磨剤を同一条件（供給量、研
磨剤温度）にて半導体ウェハと定盤との間に供給するこ
とができ、ウェハ全面の温度条件が一定となり、高平坦
化を達成することができる。The effects obtained by the representative one of the inventions disclosed in the present application will be briefly described as follows. That is, the polishing agent can be supplied between the semiconductor wafer and the surface plate under the same conditions (supply amount, polishing agent temperature), the temperature condition of the entire surface of the wafer becomes constant, and high flatness can be achieved. .
【図１】実施例の半導体ウェハの研磨装置の要部を示す
側面図である。FIG. 1 is a side view showing a main part of a semiconductor wafer polishing apparatus according to an embodiment.
１ 定盤 ２ 研磨ヘッド ２Ａ 研磨剤供給通路 ３ 加圧シリンダ ３Ａ 研磨剤供給通路 ４ 研磨プレート ４Ａ 研磨剤供給孔 1 Surface Plate 2 Polishing Head 2A Abrasive Supply Channel 3 Pressurizing Cylinder 3A Abrasive Supply Channel 4 Polishing Plate 4A Abrasive Supply Hole
Claims (3)
導体ウェハが接着される主面が、加圧シリンダによって
上記定盤の主面に対して加圧されて当接される研磨プレ
ートとを具えた半導体ウェハの研磨装置において、上記
研磨プレートに、当該主面に開口する研磨剤供給孔を設
けたことを特徴とする半導体ウェハの研磨装置。1. A polishing method in which a surface plate having a polishing cloth attached to its main surface and a main surface to which a semiconductor wafer is adhered are pressed against the main surface of the surface plate by a pressure cylinder to be in contact with each other. A polishing apparatus for a semiconductor wafer comprising a plate, wherein the polishing plate is provided with a polishing agent supply hole opening to the main surface.
の間には研磨ヘッドが介在され、該研磨ヘッドには、上
記研磨剤供給孔につながる研磨剤供給通路が形成されて
いることを特徴とする請求項１に記載の半導体ウェハの
研磨装置。2. A polishing head is interposed between the polishing plate and the pressure cylinder, and the polishing head is provided with a polishing agent supply passage connected to the polishing agent supply hole. The polishing apparatus for a semiconductor wafer according to claim 1.
えてなり、各々の研磨剤供給通路から供給される研磨剤
の供給量又は温度が、別個に制御されることを特徴とす
る請求項１又は２に記載の半導体ウェハの研磨装置。3. The polishing apparatus comprises a plurality of polishing heads, and the supply amount or temperature of the polishing agent supplied from each polishing agent supply passage is separately controlled. The semiconductor wafer polishing apparatus according to 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18589293A JPH0745565A (en) | 1993-07-28 | 1993-07-28 | Polishing device of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18589293A JPH0745565A (en) | 1993-07-28 | 1993-07-28 | Polishing device of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0745565A true JPH0745565A (en) | 1995-02-14 |
Family
ID=16178709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18589293A Pending JPH0745565A (en) | 1993-07-28 | 1993-07-28 | Polishing device of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0745565A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6022807A (en) * | 1996-04-24 | 2000-02-08 | Micro Processing Technology, Inc. | Method for fabricating an integrated circuit |
| US6443815B1 (en) | 2000-09-22 | 2002-09-03 | Lam Research Corporation | Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing |
| US6471566B1 (en) | 2000-09-18 | 2002-10-29 | Lam Research Corporation | Sacrificial retaining ring CMP system and methods for implementing the same |
| US6640155B2 (en) | 2000-08-22 | 2003-10-28 | Lam Research Corporation | Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head |
| US6652357B1 (en) | 2000-09-22 | 2003-11-25 | Lam Research Corporation | Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing |
| US7481695B2 (en) | 2000-08-22 | 2009-01-27 | Lam Research Corporation | Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head |
| WO2015072050A1 (en) * | 2013-11-18 | 2015-05-21 | 株式会社Sumco | Device for double-sided polishing and method for double-sided polishing of workpiece |
-
1993
- 1993-07-28 JP JP18589293A patent/JPH0745565A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6022807A (en) * | 1996-04-24 | 2000-02-08 | Micro Processing Technology, Inc. | Method for fabricating an integrated circuit |
| US6640155B2 (en) | 2000-08-22 | 2003-10-28 | Lam Research Corporation | Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head |
| US7481695B2 (en) | 2000-08-22 | 2009-01-27 | Lam Research Corporation | Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head |
| US6471566B1 (en) | 2000-09-18 | 2002-10-29 | Lam Research Corporation | Sacrificial retaining ring CMP system and methods for implementing the same |
| US6443815B1 (en) | 2000-09-22 | 2002-09-03 | Lam Research Corporation | Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing |
| US6652357B1 (en) | 2000-09-22 | 2003-11-25 | Lam Research Corporation | Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing |
| US6976903B1 (en) | 2000-09-22 | 2005-12-20 | Lam Research Corporation | Apparatus for controlling retaining ring and wafer head tilt for chemical mechanical polishing |
| WO2015072050A1 (en) * | 2013-11-18 | 2015-05-21 | 株式会社Sumco | Device for double-sided polishing and method for double-sided polishing of workpiece |
| JP2015098065A (en) * | 2013-11-18 | 2015-05-28 | 株式会社Sumco | Double surface polishing device and double surface polishing method of workpiece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6110012A (en) | Chemical-mechanical polishing apparatus and method | |
| JPH04217457A (en) | Method and apparatus for polishing surface of workpiece | |
| JPH10329007A (en) | Chemical machine polishing device | |
| JPH01216768A (en) | Method and device for polishing semiconductor substrate | |
| JPH09267257A (en) | Wafer grinding device | |
| JP2001054855A (en) | Carrier head with reformed flexible membrane | |
| US6471566B1 (en) | Sacrificial retaining ring CMP system and methods for implementing the same | |
| JPH0745565A (en) | Polishing device of semiconductor wafer | |
| US6780088B1 (en) | Chemical mechanical polishing apparatus and a method of chemical mechanical polishing using the same | |
| JP2000015561A (en) | Polishing machine | |
| KR100638995B1 (en) | Chemical mechanical polishing apparatus and method | |
| JPH02208931A (en) | Polishing process for compound semiconductor substrate | |
| US7156933B2 (en) | Configuration and method for mounting a backing film to a polish head | |
| JP4489320B2 (en) | Polishing equipment | |
| JPH09277163A (en) | Polishing method and polishing device | |
| US6399498B1 (en) | Method and apparatus for polishing work | |
| JPH1126404A (en) | Polishing apparatus | |
| JP2003275948A (en) | Semiconductor substrate polishing device | |
| JP3575944B2 (en) | Polishing method, polishing apparatus, and method of manufacturing semiconductor integrated circuit device | |
| JPH0929591A (en) | Substrate polishing device | |
| JP3821944B2 (en) | Wafer single wafer polishing method and apparatus | |
| JPH09326379A (en) | Method and apparatus for polishing semiconductor substrate | |
| JPH05177533A (en) | Method and device for polishing semiconductor wafer | |
| JPH04115865A (en) | Adhesion method for work | |
| JPH02240925A (en) | Polishing apparatus for wafer |