JPH0745499A - Reflective mask - Google Patents
Reflective maskInfo
- Publication number
- JPH0745499A JPH0745499A JP18573993A JP18573993A JPH0745499A JP H0745499 A JPH0745499 A JP H0745499A JP 18573993 A JP18573993 A JP 18573993A JP 18573993 A JP18573993 A JP 18573993A JP H0745499 A JPH0745499 A JP H0745499A
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- multilayer film
- mask
- absorber
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｘ線投影露光に於ける
反射型マスクに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective mask used in X-ray projection exposure.
【０００２】[0002]
【従来の技術】近年、ＬＳＩの微細回路作製におけるリ
ソグラフィーの手段としてＸ線投影露光が注目されてい
る。本方法は、従来の紫外線を用いた投影法に比べ使用
波長が短いため、より微細な回路を投影することができ
る。回路を投影するには、その回路パターンを描いたマ
スクが必要である。このマスクには、透過型マスクと反
射型マスクの２種類がある。透過型マスクは、Ｘ線が透
過し易い物質からなる厚さ１μｍ以下の自立膜（メンブ
レン）の上に、Ｘ線を吸収し易い物質からなる薄膜部品
で所望のパターンを形成したものである。しかし、この
透過型マスクはメンブレンの強度が非常に弱いため、大
面積のマスクの製造が困難であること、およびＸ線を照
射したときに発生する熱によりメンブレンの変形が生じ
易い等の問題点があった。そこで、このような問題点を
解決するために図３（ａ）、（ｂ）、（ｃ）に示すよう
な反射型マスクが提案された。図３（ａ）はＸ線を反射
する多層膜１の一部をエッチングなどにより除去してパ
ターンを形成したもの、図３（ｂ）は、多層膜１の表面
に、Ｘ線を吸収し易い物質からなる吸収体４を積層して
パターンを形成したもの、図３（ｃ）は、多層膜１の一
部の周期構造をイオン注入などにより破壊することによ
りパターンを形成したものである。図３（ａ）、
（ｂ）、（ｃ）に示すマスクは、いずれも薄いメンブレ
ンの代わりに厚い基板２を用いるため前記の問題点は生
じない。2. Description of the Related Art In recent years, X-ray projection exposure has attracted attention as a means of lithography in the production of fine circuits for LSI. Since this method uses a shorter wavelength than the conventional projection method using ultraviolet rays, it is possible to project a finer circuit. In order to project a circuit, a mask on which the circuit pattern is drawn is required. There are two types of masks, a transmissive mask and a reflective mask. The transmissive mask is formed by forming a desired pattern with a thin film component made of a substance that easily absorbs X-rays, on a self-standing film (membrane) having a thickness of 1 μm or less and made of a substance that easily transmits X-rays. However, since this transmissive mask has a very weak membrane strength, it is difficult to manufacture a large-area mask, and the membrane is likely to be deformed by heat generated when X-rays are irradiated. was there. Therefore, in order to solve such a problem, a reflective mask as shown in FIGS. 3A, 3B, and 3C has been proposed. FIG. 3A shows a pattern formed by removing a part of the multilayer film 1 that reflects X-rays by etching or the like. FIG. 3B shows that the surface of the multilayer film 1 easily absorbs X-rays. A pattern is formed by stacking absorbers 4 made of a substance, and FIG. 3C shows a pattern formed by breaking a part of the periodic structure of the multilayer film 1 by ion implantation or the like. FIG. 3 (a),
The masks shown in (b) and (c) do not have the above problems because the thick substrate 2 is used instead of the thin membrane.
【０００３】Ｘ線を反射する多層膜（以下、単に多層膜
と略すことがある）は、多層膜ミラーとも呼ばれ、これ
は屈折率の大きく異なる二種類の物質を基板上に数〜数
十Åの厚さで交互に積層させたものである。一般に、上
記の二種の層は、重元素を主成分とする物質からなる層
（重元素層という）と軽元素を主成分とする物質からな
る層（軽元素層という）である。多層膜ミラーは、多数
の界面で反射した光の干渉効果を利用したものであり、
多層膜の１周期の長さ（周期長）をｄ、Ｘ線の入射角を
θ、Ｘ線の波長をλとすると、ブラッグの条件（２ｄ s
inθ＝ｎλ）を満たすとき、高い反射率を示す。従っ
て、Ｘ線投影露光に多層膜ミラーをマスクとして使用す
ることができるのである。A multi-layer film that reflects X-rays (hereinafter sometimes simply referred to as a multi-layer film) is also called a multi-layer film mirror, which is composed of two to several tens of substances on a substrate having two kinds of substances having greatly different refractive indexes. Å The layers are stacked alternately. Generally, the above-mentioned two types of layers are a layer made of a substance containing a heavy element as a main component (called a heavy element layer) and a layer made of a substance containing a light element as a main component (called a light element layer). The multilayer mirror uses the interference effect of the light reflected at many interfaces,
Assuming that the length of one cycle (cycle length) of the multilayer film is d, the incident angle of X-rays is θ, and the wavelength of X-rays is λ, Bragg's condition (2d s
When inθ = nλ) is satisfied, a high reflectance is exhibited. Therefore, the multilayer mirror can be used as a mask for X-ray projection exposure.
【０００４】マスクのパターンは高精度に製造する必要
があるが、実際は製造工程においてパターンに欠陥が生
じてしまう場合が多い。従って、この欠陥を修正するこ
と（リペアという）が必要となる。上記の３種の反射型
マスクにおいて、図３（ａ）と（ｃ）に示すマスクは反
射部（多層膜１の存在する部分）を非反射部（多層膜１
が除去あるいは破壊されている部分）に変えることはフ
ォーカスイオンビーム（ＦＩＢ）等を用いることにより
容易にできるが、非反射部を反射部に変えることは困難
である。一方、図３（ｂ）に示すマスクは吸収体４を付
加したり除去することによって、リペアが比較的容易に
できるという特徴を有する。図３（ｂ）において反射部
（多層膜の表面が露出している部分）を非反射部（多層
膜上に吸収体が存在する部分）に変えるときは、レーザ
ー化学蒸着（ＣＶＤ）等で多層膜１の表面に吸収体４を
付着させればよい。逆に、非反射部を反射部に変えると
きはＦＩＢ等で吸収体４を除去してもよいし、新たにレ
ジストパターンを形成して吸収体４をエッチングしても
よい。このように、比較的容易にリペアができるため、
一般に図３（ｂ）に示す形態のマスクが使用されてき
た。The mask pattern needs to be manufactured with high precision, but in reality, defects often occur in the manufacturing process. Therefore, it is necessary to correct this defect (called repair). In the above three types of reflective masks, the masks shown in FIGS. 3A and 3C have a reflective portion (a portion where the multilayer film 1 exists) as a non-reflective portion (a multilayer film 1).
Can be easily changed by using a focused ion beam (FIB) or the like, but it is difficult to change the non-reflecting portion to a reflecting portion. On the other hand, the mask shown in FIG. 3B has a feature that repair can be relatively easily performed by adding or removing the absorber 4. In FIG. 3 (b), when changing the reflective part (the part where the surface of the multilayer film is exposed) to the non-reflective part (the part where the absorber exists on the multilayer film), laser chemical vapor deposition (CVD) etc. The absorber 4 may be attached to the surface of the film 1. On the contrary, when changing the non-reflecting portion to the reflecting portion, the absorber 4 may be removed by FIB or the like, or a new resist pattern may be formed and the absorber 4 may be etched. In this way, because repairs can be done relatively easily,
Generally, a mask of the form shown in FIG. 3B has been used.
【０００５】この形態のマスクの製造プロセスを図４に
示す。まず、基板に所望の多層膜１を積層しその上に吸
収体４を積層する。吸収体にはＸ線を吸収し易い物質が
用いられる。一般には金属が用いられ、タングステンや
タンタルが多く利用されている。次に吸収体表面にレジ
スト５のパターンを形成し（図４ａ）、反応イオンエッ
チング等で吸収体４をエッチングした後（図４ｂ）、レ
ジスト５を除去する（図４ｃ）。これにより吸収体４が
パターニングされ、その結果、非反射部が得られる。The manufacturing process of the mask of this form is shown in FIG. First, the desired multilayer film 1 is laminated on the substrate, and the absorber 4 is laminated thereon. A substance that easily absorbs X-rays is used for the absorber. Generally, metal is used, and tungsten and tantalum are often used. Next, a pattern of the resist 5 is formed on the surface of the absorber (FIG. 4a), the absorber 4 is etched by reactive ion etching or the like (FIG. 4b), and then the resist 5 is removed (FIG. 4c). Thereby, the absorber 4 is patterned, and as a result, the non-reflecting portion is obtained.
【０００６】吸収体４のエッチングにはＣＦ4等のガス
を用いるが、これらは多層膜１をエッチングする能力を
持つ場合が多い。従って、この場合、図４（ｂ）の工程
で吸収体４を完全に除去しようとすると、多層膜１の表
面の一部がエッチングされてしまう。このため、多層膜
１に多大なダメージを与えるので、反射部における反射
率が所望の値より減少してしまう。逆に、多層膜１がエ
ッチングされる前にエッチングを止めてしまうと、反射
部に吸収体４の一部が残って、それがやはり反射率の低
下の原因となる。このように、吸収体をエッチングする
時間の設定が難しく、吸収体の一部が残ったり、多層膜
の一部がエッチングされたりして、反射部における反射
率の低下が問題となっていた。A gas such as CF 4 is used for etching the absorber 4, but these are often capable of etching the multilayer film 1. Therefore, in this case, if it is attempted to completely remove the absorber 4 in the step of FIG. 4B, a part of the surface of the multilayer film 1 will be etched. For this reason, the multilayer film 1 is greatly damaged, and the reflectance in the reflecting portion is reduced from a desired value. On the contrary, if the etching is stopped before the multilayer film 1 is etched, a part of the absorber 4 remains in the reflection part, which also causes a decrease in reflectance. As described above, it is difficult to set the time for etching the absorber, and a part of the absorber remains or a part of the multilayer film is etched, which causes a problem of a decrease in reflectance in the reflecting portion.
【０００７】このため、前記の反射率低下を防ぐ対策と
して、吸収体と多層膜の間に新たにポリイミドで構成す
る中間層を設ける方法が提案された。この方法では、中
間層が存在している範囲でエッチングを終了させれば、
多層膜１にダメージを与えずに吸収体を完全に除去でき
る。その結果、中間層を設けることで、エッチング時間
の設定が容易になった。このようなポリイミドで中間層
を形成したマスクの製造プロセスを、図５及び図６を用
いて説明する。まず、基板２に所望の多層膜１を積層し
その上に酸素でエッチングが可能なポリイミドの中間層
７を形成し、さらに、その上に吸収体４を積層する。次
に吸収体４の表面にレジスト５のパターンを形成し（図
５ａ）、反応性イオンエッチング（ＲＩＥ）等で吸収体
４をエッチングする（図５ｂ）。続いて、酸素で中間層
７をエッチングして除去する（図５ｃ）。最後に、酸素
でレジスト５をアッシング（ここでは薄膜を単時間で等
方的にエッチングする方法を言う）して除去する（図
６）。Therefore, as a measure for preventing the above-described decrease in reflectance, a method has been proposed in which an intermediate layer made of polyimide is newly provided between the absorber and the multilayer film. In this method, if etching is completed in the range where the intermediate layer exists,
The absorber can be completely removed without damaging the multilayer film 1. As a result, the etching time can be easily set by providing the intermediate layer. A manufacturing process of a mask having such an intermediate layer formed of polyimide will be described with reference to FIGS. First, a desired multilayer film 1 is laminated on a substrate 2, an intermediate layer 7 of polyimide that can be etched with oxygen is formed thereon, and an absorber 4 is further laminated thereon. Next, a pattern of the resist 5 is formed on the surface of the absorber 4 (FIG. 5a), and the absorber 4 is etched by reactive ion etching (RIE) or the like (FIG. 5b). Subsequently, the intermediate layer 7 is removed by etching with oxygen (FIG. 5c). Finally, the resist 5 is removed by ashing with oxygen (here, a method of isotropically etching the thin film is called) is removed (FIG. 6).
【０００８】[0008]
【発明が解決しようとする課題】ところで、従来の中間
層（ポリイミド）を設けた反射型マスクは、反射部にお
ける反射率が多層膜の所望の反射率より、大きく低下し
ていた。このため、ウエハー上（受光部）でＸ線の光量
が減少し、明確なレジストパターンを得るには露光時間
を長くしなければならなかった。By the way, in the conventional reflection type mask provided with the intermediate layer (polyimide), the reflectance in the reflecting portion is much lower than the desired reflectance of the multilayer film. Therefore, the amount of X-ray light is reduced on the wafer (light receiving portion), and the exposure time must be lengthened to obtain a clear resist pattern.
【０００９】本発明は、以上のような問題を解決するこ
とを目的とする。An object of the present invention is to solve the above problems.
【００１０】[0010]
【課題を解決するための手段】本発明者らの実験によれ
ば、多層膜は耐熱性が低く、加熱をすると相互拡散等に
よる多層膜の周期構造の劣化及び周期長の変化が生じる
ので、多層膜の反射率が低下することが判明した。一
方、ポリイミド（中間層）は、レジストと同様に溶液を
スピンコーター等で基板上に塗布した後、加熱処理を施
すことによって形成される。この時の加熱温度は、レジ
ストが１００℃であるのに対し、ポリイミドでは約３５
０℃である。従って、反射部における反射率の低下は、
中間層であるポリイミドの形成方法に原因があると推測
される。According to an experiment by the present inventors, the multilayer film has low heat resistance, and when heated, deterioration of the periodic structure of the multilayer film and change of the periodic length due to mutual diffusion occur. It was found that the reflectance of the multilayer film was reduced. On the other hand, the polyimide (intermediate layer) is formed by applying a solution to the substrate with a spin coater or the like and then performing a heat treatment similarly to the resist. The heating temperature at this time is 100 ° C. for the resist, but about 35 ° C. for polyimide.
It is 0 ° C. Therefore, the decrease in the reflectance at the reflection part is
It is assumed that there is a cause in the method of forming the intermediate layer, polyimide.
【００１１】そこで、本発明者らは鋭意研究を重ねた結
果、中間層を常温（ここでは100 ℃以下の温度を意味す
る）で形成した反射型マスクを発明した。即ち、本発明
は、基板上に形成されたＸ線を反射する多層膜、該多層
膜上にＸ線を吸収しやすい物質からなる吸収体をパター
ン状に形成させた非反射部、及び前記多層膜と前記非反
射部との間に設けた中間層で構成された反射型マスクに
おいて、前記中間層を、常温で形成した薄膜で構成した
（請求項１）ものである。Therefore, as a result of intensive studies, the inventors of the present invention invented a reflective mask in which the intermediate layer was formed at room temperature (here, a temperature of 100 ° C. or lower). That is, the present invention provides a multilayer film formed on a substrate that reflects X-rays, a non-reflective portion in which a pattern-formed absorber made of a substance that easily absorbs X-rays is formed on the multilayer film, and the multilayer film. In a reflective mask including an intermediate layer provided between a film and the non-reflecting portion, the intermediate layer is formed of a thin film formed at room temperature (claim 1).
【００１２】中間層は、使用する波長においてＸ線を透
過し易い物質で構成するのが好ましい（請求項２）。ま
た、ベリリウム、ホウ素、炭素、珪素およびこれらを主
成分とする物質で中間層を構成するのが好ましい（請求
項３）。さらに、中間層を非反射部と同一パターンに形
成するのが好ましい（請求項４）。It is preferable that the intermediate layer is made of a material that easily transmits X-rays at the wavelength used (claim 2). Further, it is preferable that the intermediate layer is composed of beryllium, boron, carbon, silicon and a substance containing these as main components (claim 3). Further, it is preferable to form the intermediate layer in the same pattern as the non-reflecting portion (claim 4).
【００１３】[0013]
【作用】本発明は、中間層を常温で形成したので、多層
膜の周期構造の劣化及び周期長の変化が生じることがな
くなり、反射部における反射率の高いマスクが得られ
る。このため、ウェハー上でＸ線の強度が上がり、短い
露光時間で明確なレジストパターンが得られる。さら
に、中間層を加熱しないで形成するため、マスク基板に
歪みが生じることがなくなり、正確な形状でレジストパ
ターンが得られるようになる。また、従来の中間層を設
けた反射型マスクと同様に、中間層が存在している範囲
でエッチングを終了させれば、多層膜にダメージを与え
ずに吸収体を完全に除去できる。その結果、エッチング
時間の設定が容易になる。In the present invention, since the intermediate layer is formed at room temperature, deterioration of the periodic structure of the multilayer film and change of the periodic length do not occur, and a mask having a high reflectance in the reflecting portion can be obtained. Therefore, the intensity of X-rays is increased on the wafer, and a clear resist pattern can be obtained in a short exposure time. Furthermore, since the intermediate layer is formed without heating, the mask substrate is prevented from being distorted, and the resist pattern can be obtained in an accurate shape. Further, similar to the conventional reflective mask provided with an intermediate layer, if the etching is completed in the range where the intermediate layer exists, the absorber can be completely removed without damaging the multilayer film. As a result, the etching time can be easily set.
【００１４】Ｘ線を透過し易い物質で中間層を形成する
のが好ましい。そうすれば、反射部の中間層を完全に除
去しなくても良い。本発明の中間層の材料としては、ベ
リリウム、ホウ素、炭素、珪素あるいはこれらを主成分
とする物質（例えばＢ4Ｃの如き化合物又は混合物）な
どを選択しても良い。特にベリリウムは１１ｎｍより長
波長のＸ線に対して、ホウ素は６．６ｎｍより長波長の
Ｘ線に対して、炭素は４．４ｎｍより長波長のＸ線に対
して、珪素は１２ｎｍより長波長のＸ線に対してそれぞ
れ透過率が大きい。It is preferable to form the intermediate layer with a substance that easily transmits X-rays. Then, it is not necessary to completely remove the intermediate layer of the reflection part. As the material of the intermediate layer of the present invention, beryllium, boron, carbon, silicon or a substance containing these as the main components (for example, a compound or mixture such as B 4 C) may be selected. In particular, beryllium has a wavelength longer than 11 nm, boron has a wavelength longer than 6.6 nm, carbon has a wavelength longer than 4.4 nm, and silicon has a wavelength longer than 12 nm. The X-rays have a large transmittance.
【００１５】多層膜にダメージを与えずに完全に除去で
きる中間層は、反射部における反射率の低下は全くなく
なるから好ましい。中間層に例えば炭素膜を用いると、
炭素は酸素でエッチングされるが、多くの多層膜は酸素
でエッチングされない。従って、多層膜にダメージを与
えずに中間層（炭素膜）だけを完全に除去することがで
きる。An intermediate layer which can be completely removed without damaging the multi-layer film is preferable because the reflectance in the reflecting portion is not reduced at all. If a carbon film is used for the intermediate layer,
Carbon etches with oxygen, but many multilayers do not. Therefore, only the intermediate layer (carbon film) can be completely removed without damaging the multilayer film.
【００１６】中間層を常温で形成する方法は、蒸着法、
スパッタ法、ＣＶＤ法等の真空薄膜形成技術のほか、場
合によっては、塗布法（厚膜法）も利用することができ
る。The intermediate layer is formed at room temperature by vapor deposition,
In addition to a vacuum thin film forming technique such as a sputtering method or a CVD method, a coating method (thick film method) can be used in some cases.
【００１７】[0017]
【実施例】以下、図面を引用して実施例により本発明を
具体的に説明するが、本発明はこれに限られるものでは
ない。図１は実施例１にかかる反射型マスクの概略断面
図である。基板２の上にモリブデンと珪素からなる多層
膜１（Ｍｏ／Ｓｉ）があり、その上に炭素の中間層３が
あり、その上にタングステンの吸収体４のパターンがあ
る。多層膜１は周期長が６．６ｎｍで１００層積層され
ており、スパッタ法で形成した。この多層膜１は波長１
３ｎｍのＸ線を反射し、その反射率は約７０％である。
次に、スパッタ法によって、炭素の中間層３を厚さ１０
ｎｍで積層した。さらに、スパッタ法でタングステンの
吸収体４を１００ｎｍ積層し、その上にレジスト５を塗
布した。光リソグラフィーによりレジスト５を露光し、
最小線幅３μmのレジストパターンを形成した（図２
ａ）。つぎに、ＲＩＥにより吸収体４をエッチングした
（図２ｂ）。このときエッチングガスにはＣＦ4を用い
た。吸収体４を完全にパターニングしたのち、酸素のア
ッシングによって中間層３と吸収体４の表面に残ったレ
ジスト５を同時に除去した（図２ｃ）。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the following examples with reference to the drawings, but the present invention is not limited thereto. FIG. 1 is a schematic sectional view of a reflective mask according to the first embodiment. A multilayer film 1 (Mo / Si) made of molybdenum and silicon is provided on a substrate 2, a carbon intermediate layer 3 is provided thereon, and a pattern of a tungsten absorber 4 is provided thereon. The multilayer film 1 has 100 layers with a period length of 6.6 nm and is formed by a sputtering method. This multilayer film 1 has a wavelength of 1
It reflects 3 nm X-rays and its reflectance is about 70%.
Next, a carbon intermediate layer 3 having a thickness of 10 is formed by a sputtering method.
laminated in nm. Further, a 100 nm thick absorber 4 of tungsten was laminated by a sputtering method, and a resist 5 was applied thereon. Expose the resist 5 by photolithography,
A resist pattern with a minimum line width of 3 μm was formed (Fig. 2
a). Next, the absorber 4 was etched by RIE (FIG. 2b). At this time, CF 4 was used as the etching gas. After completely patterning the absorber 4, the intermediate layer 3 and the resist 5 remaining on the surface of the absorber 4 were simultaneously removed by oxygen ashing (FIG. 2c).
【００１８】波長１３ｎｍのＸ線を用いて本マスクの反
射部の反射率を測定したところ、反射率は７０％であ
り、反射率の低下は全く見られなかった。また、非反射
部の反射率は０％であった。一方、従来の中間層（ポリ
イミド）を設けた反射型マスクでは、反射部の反射率は
５０％であった。このマスクのパターンを、シンクロト
ロン放射光を光源とし、結像光学系に縮小率１／３０の
シュバルツシルド光学系を用いて、レジストを塗布した
シリコンウエハー上に縮小露光した。その結果、波長１
３ｎｍのＸ線で最小線幅０.1μmのレジストパターンが
得られた。露光時間は従来の中間層（ポリイミド）を設
けた反射型マスクに比べて約３０％短くなった。When the reflectance of the reflecting portion of this mask was measured using X-rays having a wavelength of 13 nm, the reflectance was 70% and no decrease in reflectance was observed. The reflectance of the non-reflecting portion was 0%. On the other hand, in the conventional reflective mask provided with the intermediate layer (polyimide), the reflectance of the reflective portion was 50%. This mask pattern was subjected to reduction exposure on a resist-coated silicon wafer using synchrotron radiation as a light source and a Schwarzschild optical system having a reduction ratio of 1/30 as an imaging optical system. As a result, wavelength 1
With a 3 nm X-ray, a resist pattern having a minimum line width of 0.1 μm was obtained. The exposure time was about 30% shorter than that of a conventional reflective mask provided with an intermediate layer (polyimide).
【００１９】なお、本実施例には、多層膜を形成する物
質としてＭｏ／Ｓｉを取りあげたが、本発明に採用でき
る物質はこれに限らない。例えば、軽元素としては、フ
ッ化リチウム、ホウ素、炭化ホウ素等、重元素として
は、銀、ニッケル、クロム、タングステン、ロジウム、
ルテニウム等を用いてもよい。また中間層およびその膜
厚、形成法も、本実施例に限らない。さらに、マスクの
製造プロセスにおけるレジストパターンの形成法、エッ
チングの方法なども本実施例に示したものに限らない。Although Mo / Si is taken as the material for forming the multilayer film in this embodiment, the material applicable to the present invention is not limited to this. For example, as a light element, lithium fluoride, boron, boron carbide, etc., and as a heavy element, silver, nickel, chromium, tungsten, rhodium,
You may use ruthenium etc. Further, the intermediate layer, the film thickness thereof, and the forming method are not limited to those in this embodiment. Further, the method of forming the resist pattern and the method of etching in the mask manufacturing process are not limited to those shown in this embodiment.
【００２０】[0020]
【発明の効果】以上説明したように、本発明によれば、
露光装置の受光部でＸ線強度が上がり、露光時間が短縮
できる。このため、露光装置のスループットが向上し、
単位時間あたりの生産性が高まる。さらに、正確な形状
のレジストパターンが得られ、製品の良品率が向上す
る。As described above, according to the present invention,
The X-ray intensity is increased at the light receiving portion of the exposure device, and the exposure time can be shortened. Therefore, the throughput of the exposure apparatus is improved,
Productivity per unit time increases. Furthermore, a resist pattern having an accurate shape can be obtained, and the non-defective rate of the product is improved.
【図１】は、本発明による実施例１の反射型マスクを示
す概略断面図である。FIG. 1 is a schematic cross-sectional view showing a reflective mask of Example 1 according to the present invention.
【図２】は、実施例１の反射型マスクの製造工程を示す
概略断面図である。FIG. 2 is a schematic cross-sectional view showing the manufacturing process of the reflective mask of Example 1.
【図３】は、従来の反射型マスクを示す概略断面図であ
る。FIG. 3 is a schematic sectional view showing a conventional reflective mask.
【図４】は、従来の反射型マスクの製造工程を示す概略
断面図である。FIG. 4 is a schematic cross-sectional view showing a manufacturing process of a conventional reflective mask.
【図５】は、中間層を設けた従来の反射型マスクの製造
工程途中を示す概略断面図である。FIG. 5 is a schematic cross-sectional view showing a manufacturing process of a conventional reflective mask having an intermediate layer.
【図６】は、中間層を設けた従来の反射型マスクを示す
概略断面図である。FIG. 6 is a schematic sectional view showing a conventional reflective mask provided with an intermediate layer.
１ 多層膜（反射部） ２ 基板 ３ 中間層 ４ 吸収体（非反射部） ５ レジスト ６ 周期構造が破壊された多層膜 ７ ポリイミド 以上 1 multilayer film (reflecting part) 2 substrate 3 intermediate layer 4 absorber (non-reflecting part) 5 resist 6 multilayer film in which periodic structure is destroyed 7 polyimide or more
Claims (4)
膜、該多層膜上にＸ線を吸収しやすい物質からなる吸収
体をパターン状に形成させた非反射部、及び前記多層膜
と前記非反射部との間に設けた中間層で構成された反射
型マスクにおいて、 前記中間層が、常温で形成した薄膜からなることを特徴
とする反射型マスク。1. A multilayer film formed on a substrate for reflecting X-rays, a non-reflective portion having an absorber made of a substance that easily absorbs X-rays formed in a pattern on the multilayer film, and the multilayer film. A reflective mask including an intermediate layer provided between the non-reflecting portion and the non-reflective portion, wherein the intermediate layer is a thin film formed at room temperature.
線を透過し易い物質からなることを特徴とする請求項１
に記載の反射型マスク。2. The intermediate layer is X at the wavelength used.
2. A material which easily penetrates a wire.
The reflective mask described in.
ム、ホウ素、炭素、珪素あるいはこれらを主成分とする
物質であることを特徴とする請求項１に記載の反射型マ
スク。3. The reflective mask according to claim 1, wherein the material forming the intermediate layer is beryllium, boron, carbon, silicon or a material containing these as main components.
であることを特徴とする請求項１に記載の反射型マス
ク。4. The reflective mask according to claim 1, wherein the intermediate layer has the same pattern as the non-reflective portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18573993A JP3266994B2 (en) | 1993-07-28 | 1993-07-28 | Reflective mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18573993A JP3266994B2 (en) | 1993-07-28 | 1993-07-28 | Reflective mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0745499A true JPH0745499A (en) | 1995-02-14 |
| JP3266994B2 JP3266994B2 (en) | 2002-03-18 |
Family
ID=16176019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18573993A Expired - Lifetime JP3266994B2 (en) | 1993-07-28 | 1993-07-28 | Reflective mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3266994B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180621B1 (en) | 1996-05-09 | 2001-01-30 | Sankyo Company, Limited | Method and treatment using 1-methylcarbapenem derivatives as an anti-helicobacter pylori agent |
| JP2002122981A (en) * | 2000-10-13 | 2002-04-26 | Samsung Electronics Co Ltd | Reflective photomask |
| JP2006190900A (en) * | 2005-01-07 | 2006-07-20 | Toppan Printing Co Ltd | Reflective photo mask, blank thereof, and method of manufacturing semiconductor device using the same |
| WO2007116562A1 (en) | 2006-03-30 | 2007-10-18 | Toppan Printing Co., Ltd. | Reflective photomask blank, process for producing the same, reflective photomask and process for producing semiconductor device |
| CN102354087A (en) * | 2011-11-03 | 2012-02-15 | 中国科学院半导体研究所 | Method for improving photoresist exposure precision |
-
1993
- 1993-07-28 JP JP18573993A patent/JP3266994B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180621B1 (en) | 1996-05-09 | 2001-01-30 | Sankyo Company, Limited | Method and treatment using 1-methylcarbapenem derivatives as an anti-helicobacter pylori agent |
| JP2002122981A (en) * | 2000-10-13 | 2002-04-26 | Samsung Electronics Co Ltd | Reflective photomask |
| JP2006190900A (en) * | 2005-01-07 | 2006-07-20 | Toppan Printing Co Ltd | Reflective photo mask, blank thereof, and method of manufacturing semiconductor device using the same |
| JP4635610B2 (en) * | 2005-01-07 | 2011-02-23 | 凸版印刷株式会社 | Reflective photomask blank, reflective photomask, and reflective photomask manufacturing method |
| WO2007116562A1 (en) | 2006-03-30 | 2007-10-18 | Toppan Printing Co., Ltd. | Reflective photomask blank, process for producing the same, reflective photomask and process for producing semiconductor device |
| JP2007294840A (en) * | 2006-03-30 | 2007-11-08 | Toppan Printing Co Ltd | Reflective photomask blank and its manufacturing method, reflective photomask, and method for manufacturing semiconductor device |
| US8394558B2 (en) | 2006-03-30 | 2013-03-12 | Toppan Printing Co., Ltd. | Reflection type photomask blank, manufacturing method thereof, reflection type photomask, and manufacturing method of semiconductor device |
| CN102354087A (en) * | 2011-11-03 | 2012-02-15 | 中国科学院半导体研究所 | Method for improving photoresist exposure precision |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3266994B2 (en) | 2002-03-18 |
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