JPH0743381A - Failure diagnostic circuit for semiconductor acceleration sensor - Google Patents
Failure diagnostic circuit for semiconductor acceleration sensorInfo
- Publication number
- JPH0743381A JPH0743381A JP20826693A JP20826693A JPH0743381A JP H0743381 A JPH0743381 A JP H0743381A JP 20826693 A JP20826693 A JP 20826693A JP 20826693 A JP20826693 A JP 20826693A JP H0743381 A JPH0743381 A JP H0743381A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration sensor
- failure
- semiconductor acceleration
- bridge
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体加速度センサの
断線検出回路に関するものであり、詳しく言えば、支持
部と、錘部と、この錘部を支持部に接続する梁部とを具
備する半導体加速度センサにおいて、梁部の破断を検知
するに好適な故障診断回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a disconnection detection circuit for a semiconductor acceleration sensor, and more specifically, it includes a support portion, a weight portion, and a beam portion connecting the weight portion to the support portion. The present invention relates to a failure diagnosis circuit suitable for detecting breakage of a beam portion in a semiconductor acceleration sensor.
【０００２】[0002]
【従来の技術】従来の半導体加速度センサは、例えば
「A Batch-Fabricated Silicon Accelerometer ( IEEE
TRANSACTION ON ELECTRON DEVICES, VOL.ED-26, NO.12,
DECEMBER 1979 pp1911-1917 )」に開示されており、図
４で示すと、１は枠状の支持部、２は支持部１の内側に
形成された矩形状の隙間、３は隙間２の略中央で浮いた
状態で支持された錘部、４は支持部１と錘部３とを接続
する４つのビーム４ａ，４ｂ，４ｃ，４ｄから成る梁部
であり、これらは薄膜シリコン板にて一体的に形成され
ている。また、５は梁部４のビーム４ａ，４ｂ，４ｃ，
４ｄ上に拡散あるいは注入により形成された歪ゲージ５
ａ，５ｂ，５ｃ，５ｄから成る抵抗素子であり、電気的
には図５で示すように平衡状態に調製されたブリッジを
構成し、以上が半導体加速度センサＳである。そして、
歪ゲージ５ａ，５ｃの接続点に電源電圧Ｖｉが供給さ
れ、歪ゲージ５ｂ，５ｄの接続点は接地され、歪ゲージ
５ａ，５ｂの接続中点電圧と歪ゲージ５ｃ，５ｄの接続
中点電圧との電位差が出力信号Ｖｏとして取り出され
る。2. Description of the Related Art A conventional semiconductor acceleration sensor is, for example, an "A Batch-Fabricated Silicon Accelerometer (IEEE
TRANSACTION ON ELECTRON DEVICES, VOL.ED-26, NO.12,
DECEMBER 1979 pp1911-1917) ", and as shown in FIG. 4, 1 is a frame-shaped support portion, 2 is a rectangular gap formed inside the support portion 1, and 3 is substantially the center of the gap 2. The weights 4 supported in a floating state are beam portions composed of four beams 4a, 4b, 4c, and 4d connecting the support portion 1 and the weight portion 3, and these are integrated by a thin film silicon plate. Is formed in. Further, 5 is a beam 4a, 4b, 4c of the beam portion 4,
Strain gauge 5 formed by diffusion or injection on 4d
It is a resistance element composed of a, 5b, 5c and 5d, and electrically forms a bridge prepared in a balanced state as shown in FIG. 5, and the above is the semiconductor acceleration sensor S. And
The power supply voltage Vi is supplied to the connection point of the strain gauges 5a and 5c, the connection point of the strain gauges 5b and 5d is grounded, and the connection midpoint voltage of the strain gauges 5a and 5b and the connection midpoint voltage of the strain gauges 5c and 5d are set. The potential difference of is taken out as the output signal Vo.
【０００３】かかる半導体加速度センサＳは、錘部３に
加速度が加わると、梁部４のビーム４ａ，４ｂ，４ｃ，
４ｄが変形し、これに応じて歪ゲージ５ａ，５ｂ，５
ｃ，５ｄの抵抗値が変化することから、前記ブリッジの
平衡が崩れ、出力信号Ｖｏにより前記加速度を検出する
ことができる。In the semiconductor acceleration sensor S, when acceleration is applied to the weight portion 3, the beams 4a, 4b, 4c of the beam portion 4,
4d is deformed, and strain gauges 5a, 5b, 5 are correspondingly deformed.
Since the resistance values of c and 5d change, the balance of the bridge is lost and the acceleration can be detected by the output signal Vo.
【０００４】[0004]
【発明が解決しようとする課題】ところで、錘部３に最
大許容値異常の加速度が加わった場合には、梁部４が破
断する等の異常が生じることがあり、これを検知するも
のとして、特開平１−１６３６７３号公報には、支持部
１から梁部４の所定領域に亘って破断検知用の導電ライ
ンを設けたものが開示されている。これによれば、導電
ラインの電気的状態（抵抗値）を監視することにより、
梁部４の破断を判断することができるものの、歪ゲージ
５ａ，５ｂ，５ｃ，５ｄから成る抵抗素子５の異常は検
出できず、また、前記ブリッジからの出力信号を処理す
る回路の途中にハイパスフィルタ回路が挿入されている
と、前記回路の異常によりフィルタ回路の手前での信号
が電源電圧又は接地電圧の一方にある場合には、出力信
号は一定となって前記異常を検知することはできなかっ
た。By the way, when acceleration of maximum allowable value abnormality is applied to the weight portion 3, an abnormality such as breakage of the beam portion 4 may occur. Japanese Unexamined Patent Publication No. 1-163673 discloses a structure in which a conductive line for breaking detection is provided from a supporting portion 1 to a predetermined region of a beam portion 4. According to this, by monitoring the electrical state (resistance value) of the conductive line,
Although the breakage of the beam portion 4 can be judged, the abnormality of the resistance element 5 composed of the strain gauges 5a, 5b, 5c, 5d cannot be detected, and a high-pass is provided in the middle of the circuit for processing the output signal from the bridge. When the filter circuit is inserted, if the signal in front of the filter circuit is at one of the power supply voltage or the ground voltage due to the abnormality of the circuit, the output signal becomes constant and the abnormality cannot be detected. There wasn't.
【０００５】また、実開平５−４０２５号公報には、平
衡状態に調整された抵抗素子５を構成する歪ゲージ５
ａ，５ｂ，５ｃ，５ｄの少なくとも一つにこの抵抗素子
よりも抵抗値が大きい異常検出用抵抗素子を接続し、所
定の時間抵抗素子５のバランスを崩すことにより、平衡
が崩された抵抗素子５の出力を検出することにより、回
路の異常を識別するものが開示されている。これによれ
ば、回路の異常は検出できるものの、梁部４の検出はで
きなかった。Further, Japanese Utility Model Laid-Open No. 5-4025 discloses a strain gauge 5 which constitutes a resistance element 5 adjusted to a balanced state.
A resistance element whose balance is broken by connecting an abnormality detection resistance element having a resistance value larger than that of this resistance element to at least one of a, 5b, 5c, and 5d, and breaking the balance of the resistance element 5 for a predetermined time. It is disclosed that the abnormality of the circuit is identified by detecting the output of No. 5. According to this, although the circuit abnormality can be detected, the beam portion 4 cannot be detected.
【０００６】[0006]
【課題を解決するための手段】本発明は、前記課題を解
決するため、支持部と、錘部と、この錘部を前記支持部
に接続する梁部とを一体的に具備し、前記梁部に形成さ
れ平衡状態に調製されたブリッジを構成する抵抗素子を
有する半導体加速度センサにおいて、故障しやすい個所
に形成され前記抵抗素子に接続された故障診断用抵抗
と、前記ブリッジの平衡を崩す診断信号発生手段と、か
ら構成する。In order to solve the above problems, the present invention integrally comprises a support portion, a weight portion, and a beam portion connecting the weight portion to the support portion. In a semiconductor acceleration sensor having a resistance element that forms a bridge and is formed in a balanced state, a failure diagnosis resistor connected to the resistance element and formed at a location that is prone to failure, and a diagnosis that breaks the balance of the bridge And signal generating means.
【０００７】[0007]
【作用】診断信号発生手段により平衡が崩されたブリッ
ジ及び前記故障診断用抵抗から成る回路の出力信号を基
にすることにより、抵抗素子の異常及び故障しやすい個
所の異常を確実に判断することができる。Function: To reliably judge an abnormality of a resistance element and an abnormality of a portion liable to fail by using an output signal of a circuit composed of a bridge and a failure diagnosis resistor whose balance is lost by a diagnostic signal generating means. You can
【０００８】[0008]
【実施例】本発明を図１，２に記載した一実施例に基づ
き説明する。なお、前記従来例と同一もしくは相当個所
には同一符合を付してその詳細な説明は省く。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described based on an embodiment shown in FIGS. It should be noted that the same or corresponding parts as those of the conventional example are designated by the same reference numerals and detailed description thereof will be omitted.
【０００９】半導体加速度センサＳは、基本的には図
４，５で示した従来例と同様である。ただ、図１で示す
ように、支持部１から梁部４の各ビーム４ａ，４ｂ，４
ｃ，４ｄ（故障しやすい個所）及び錘部３を経由して再
び支持部１に戻る連続した導電路から成る故障診断用抵
抗６が設けられており、この故障診断用抵抗６は、抵抗
素子５の抵抗値と比較して大きくなるように設定されて
おり、電気的には図２で示すように、歪ゲージ５ｃ，５
ｄの接続点に接続されている。The semiconductor acceleration sensor S is basically the same as the conventional example shown in FIGS. However, as shown in FIG. 1, each of the beams 4a, 4b, 4 from the supporting portion 1 to the beam portion 4 is
There is provided a failure diagnosis resistor 6 composed of a continuous conductive path returning to the support portion 1 again via c, 4d (locations that are prone to failure) and the weight portion 3, and the failure diagnosis resistor 6 is a resistance element. The resistance is set to be larger than the resistance value of No. 5, and as shown in FIG.
It is connected to the connection point of d.
【００１０】７は、ＮＰＮトランジスタであり、コレク
タ端子は故障診断用抵抗６の他端に接続されると共にエ
ミッタ端子は接地されている。そして、ベース端子に加
えられる診断信号Ｖｓによりスイッチング動作を行う。Reference numeral 7 is an NPN transistor, the collector terminal of which is connected to the other end of the failure diagnosis resistor 6 and the emitter terminal of which is grounded. Then, the switching operation is performed by the diagnostic signal Vs applied to the base terminal.
【００１１】８は、トランジスタ７のベース端子に接続
され、図示しないスイッチ操作により又は自動的に診断
信号Ｖｓを出力する診断信号発生手段であり、この診断
信号発生手段８からの診断信号Ｖｓに応じてトランジス
タ７がスイッチング動作を行うと、前記ブリッジの平衡
が崩れ、これに応じた出力信号Ｖｏが発生される。従っ
て、この出力信号Ｖｏをモニタすることにより、抵抗素
子５の状態及び前記故障しやすい個所が正常か異常か、
すなわち、ビーム４ａ，４ｂ，４ｃ，４ｄの少なくとも
どれか一つが破断していないか破断しているか、を検出
することができる。Reference numeral 8 is a diagnostic signal generating means which is connected to the base terminal of the transistor 7 and which outputs a diagnostic signal Vs by a switch operation (not shown) or in response to the diagnostic signal Vs from the diagnostic signal generating means 8. When the transistor 7 performs the switching operation by the above, the balance of the bridge is lost, and the output signal Vo corresponding thereto is generated. Therefore, by monitoring the output signal Vo, it is possible to determine whether the state of the resistance element 5 and the location where the failure easily occurs are normal or abnormal.
That is, it is possible to detect whether at least one of the beams 4a, 4b, 4c and 4d is not broken or is broken.
【００１２】また、前記従来例（実開平５−４０２５号
公報）の構成と組み合わせることにより、他の回路の状
態をも検出することができる。Further, by combining with the configuration of the above-mentioned conventional example (Japanese Utility Model Laid-Open No. 5-4025), the states of other circuits can be detected.
【００１３】図３は、本発明の他の実施例を示してお
り、故障診断用抵抗６の接続位置が前記実施例とは異な
っているが、動作原理は同じである。なお、同図中、ｒ
１，ｒ２は半導体加速度センサＳにおける歪ゲージ５
ａ，５ｂ，５ｃ，５ｄ等を電気的に接続するために用い
られる導体路の抵抗値に相当する抵抗、ｒ３は半導体加
速度センサＳと回路とを電気的に接続するために用いら
れるワイヤの抵抗値に相当する抵抗である。これらは、
抵抗素子５の抵抗値に比べて小さい。FIG. 3 shows another embodiment of the present invention, in which the connection position of the failure diagnosis resistor 6 is different from that of the above embodiment, but the operating principle is the same. In the figure, r
1 and r2 are strain gauges 5 in the semiconductor acceleration sensor S
a, 5b, 5c, 5d, etc., a resistance corresponding to the resistance value of a conductor path used for electrically connecting, and r3 is a resistance of a wire used for electrically connecting the semiconductor acceleration sensor S and the circuit. It is the resistance corresponding to the value. They are,
It is smaller than the resistance value of the resistance element 5.
【００１４】[0014]
【発明の効果】本発明は、支持部と、錘部と、この錘部
を前記支持部に接続する梁部とを一体的に具備し、前記
梁部に形成され平衡状態に調製されたブリッジを構成す
る抵抗素子を有する半導体加速度センサにおいて、故障
しやすい個所に形成され前記抵抗素子に接続された故障
診断用抵抗と、前記ブリッジの平衡を崩す診断信号発生
手段と、から構成されるものであり、診断信号発生手段
により平衡が崩されたブリッジ及び前記故障診断用抵抗
から成る回路の出力信号を基にして故障診断手段により
抵抗素子の異常及び故障しやすい個所の異常を確実に判
断することができる。According to the present invention, a bridge integrally provided with a supporting portion, a weight portion, and a beam portion connecting the weight portion to the supporting portion is formed in the beam portion and prepared in a balanced state. In a semiconductor acceleration sensor having a resistance element that constitutes, a failure diagnosis resistor connected to the resistance element and formed in a location that is prone to failure, and a diagnostic signal generating means for breaking the balance of the bridge. Yes, the failure diagnosing means must surely determine the abnormality of the resistance element and the abnormality of the vulnerable portion based on the output signal of the circuit composed of the bridge and the failure diagnosing resistor whose balance is lost by the diagnostic signal generating means. You can
【図１】本発明の一実施例の構成を説明する平面図。FIG. 1 is a plan view illustrating the configuration of an embodiment of the present invention.
【図２】同上実施例の回路図。FIG. 2 is a circuit diagram of the above embodiment.
【図３】本発明の他の実施例の回路図。FIG. 3 is a circuit diagram of another embodiment of the present invention.
【図４】従来例の構成を説明する平面図。FIG. 4 is a plan view illustrating a configuration of a conventional example.
【図５】同上従来例の回路図。FIG. 5 is a circuit diagram of the above conventional example.
Ｓ 半導体加速度センサ １ 支持部 ３ 錘部 ４ 梁部 ４ａ，４ｂ，４ｃ，４ｄ ビーム ５ 抵抗素子 ５ａ，５ｂ，５ｃ，５ｄ 歪ゲージ ６ 故障診断用抵抗 ８ 診断信号発生手段 S Semiconductor acceleration sensor 1 Support part 3 Weight part 4 Beam part 4a, 4b, 4c, 4d Beam 5 Resistance element 5a, 5b, 5c, 5d Strain gauge 6 Failure diagnosis resistance 8 Diagnostic signal generating means
Claims (1)
部に接続する梁部とを一体的に具備し、前記梁部に形成
され平衡状態に調製されたブリッジを構成する抵抗素子
を有する半導体加速度センサにおいて、故障しやすい個
所に形成され前記抵抗素子に接続された故障診断用抵抗
と、前記ブリッジの平衡を崩す診断信号発生手段と、か
ら構成されることを特徴とする半導体加速度センサの故
障診断回路。1. A resistor that integrally includes a support portion, a weight portion, and a beam portion that connects the weight portion to the support portion, and that forms a balanced bridge formed on the beam portion. In a semiconductor acceleration sensor having an element, a semiconductor comprising a failure diagnosis resistor formed at a location prone to failure and connected to the resistance element, and diagnostic signal generating means for breaking the balance of the bridge. Accelerometer failure diagnosis circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20826693A JPH0743381A (en) | 1993-07-31 | 1993-07-31 | Failure diagnostic circuit for semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20826693A JPH0743381A (en) | 1993-07-31 | 1993-07-31 | Failure diagnostic circuit for semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0743381A true JPH0743381A (en) | 1995-02-14 |
Family
ID=16553399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20826693A Pending JPH0743381A (en) | 1993-07-31 | 1993-07-31 | Failure diagnostic circuit for semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0743381A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006294892A (en) * | 2005-04-12 | 2006-10-26 | Dainippon Printing Co Ltd | Uniaxial semiconductor acceleration sensor |
| WO2013157264A1 (en) * | 2012-04-20 | 2013-10-24 | パナソニック株式会社 | Inertial force sensor |
| WO2014196320A1 (en) * | 2013-06-04 | 2014-12-11 | 株式会社村田製作所 | Acceleration sensor |
-
1993
- 1993-07-31 JP JP20826693A patent/JPH0743381A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006294892A (en) * | 2005-04-12 | 2006-10-26 | Dainippon Printing Co Ltd | Uniaxial semiconductor acceleration sensor |
| WO2013157264A1 (en) * | 2012-04-20 | 2013-10-24 | パナソニック株式会社 | Inertial force sensor |
| JPWO2013157264A1 (en) * | 2012-04-20 | 2015-12-21 | パナソニックＩｐマネジメント株式会社 | Inertial force sensor |
| WO2014196320A1 (en) * | 2013-06-04 | 2014-12-11 | 株式会社村田製作所 | Acceleration sensor |
| JP5930127B2 (en) * | 2013-06-04 | 2016-06-08 | 株式会社村田製作所 | Acceleration sensor |
| US10156584B2 (en) | 2013-06-04 | 2018-12-18 | Murata Manufacturing Co., Ltd. | MEMS piezoresistive acceleration sensor |
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