JPH0737879A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPH0737879A JPH0737879A JP20022593A JP20022593A JPH0737879A JP H0737879 A JPH0737879 A JP H0737879A JP 20022593 A JP20022593 A JP 20022593A JP 20022593 A JP20022593 A JP 20022593A JP H0737879 A JPH0737879 A JP H0737879A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sog
- atmosphere
- heat treatment
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は本発明は、半導体装置の
製造方法に関し、特にＳＯＧ（Ｓｐｉｎ Ｏｎ Ｇｌａ
ｓｓ）塗布膜の形成に特徴を有する半導体装置の製造方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to SOG (Spin On Gla).
ss) The present invention relates to a method for manufacturing a semiconductor device characterized by forming a coating film.
【０００２】[0002]
【従来の技術】従来から半導体集積回路等の半導体装置
に於て、配線パターンの形成に伴うデバイス表面に段差
が形成されることにより、多層構造に於ける上層側配線
の断線や特性の劣化が問題となっている。特に近年の高
集積化傾向に伴いこの段差が急峻となりがちになり、上
記問題が一層深刻になっている。2. Description of the Related Art Conventionally, in a semiconductor device such as a semiconductor integrated circuit, a step is formed on the device surface due to the formation of a wiring pattern, which causes disconnection of upper layer side wiring in a multilayer structure and deterioration of characteristics. It's a problem. In particular, with the recent trend toward higher integration, this step tends to become steeper, and the above problem becomes more serious.
【０００３】そこで、この急峻な段差を軽減するため
に、アルミ配線形成前ではＢＰＳＧリフロー法が用いら
れている。これは、半導体基板上にＢＰＳＧ膜を形成し
更に熱処理を施すことにより、このＢＰＳＧ膜を軟化さ
せて段差部を埋め込む技術である。また、アルミ配線形
成後ではＳＯＧ塗布膜を用いる方法がある。これは、半
導体基板上にＳＯＧ液を塗布して更に熱処理を施すこと
により、段差部を埋め込む技術である。ＳＯＧ液は液体
であるため、段差の底部にも充塞して段差を軽減するこ
とができる。また、ＳＯＧ液に熱処理を施すことによ
り、シラノール基の脱水縮合反応によってＳＯＧ液はＳ
ｉＯ2となり、半導体集積回路に適用可能な薄膜とな
る。Therefore, in order to reduce this steep step, the BPSG reflow method is used before the formation of aluminum wiring. This is a technique in which a BPSG film is formed on a semiconductor substrate and further heat-treated to soften the BPSG film to fill the step portion. Further, there is a method of using an SOG coating film after forming the aluminum wiring. This is a technique in which a step portion is filled by applying an SOG liquid on a semiconductor substrate and further performing heat treatment. Since the SOG liquid is a liquid, it is possible to reduce the level difference by filling the bottom of the level difference. Further, when the SOG liquid is subjected to heat treatment, the SOG liquid becomes S by the dehydration condensation reaction of silanol groups.
iO 2, and becomes an applicable thin film semiconductor integrated circuit.
【０００４】[0004]
【発明が解決しようとする課題】ＢＰＳＧリフロー法を
平坦化に用いる場合、充分な平坦化形状を得るために、
ＢＰＳＧ膜を形成した後の熱処理を８５０〜９００℃で
行うこととなる。この温度での熱処理はコンタクトホー
ルに用いられるＴｉＮ等のバリアメタルのバリア性を低
下させ、トランジスタの性能に悪影響を及ぼし易くな
る。特にゲート長が０．５μｍ以下となるようなＬＳＩ
にあってはこの悪影響が無視できない。また、このよう
なＬＳＩに用いられるＷ−ＣＶＤ法によるタングステン
膜は酸化し易く、７５０℃程度以上の高温で容易に酸化
して剥がれ落ちてしまう問題があり、熱処理を行う場
合、ロードロックを用いて酸素を排除しなければならな
いと云う問題もあった。When the BPSG reflow method is used for flattening, in order to obtain a sufficient flattened shape,
The heat treatment after forming the BPSG film is performed at 850 to 900 ° C. The heat treatment at this temperature lowers the barrier property of the barrier metal such as TiN used for the contact hole, and tends to adversely affect the performance of the transistor. In particular, LSI with a gate length of 0.5 μm or less
Therefore, this adverse effect cannot be ignored. Further, there is a problem that the tungsten film by the W-CVD method used for such an LSI is easily oxidized and easily oxidizes and peels off at a high temperature of about 750 ° C. or more. When heat treatment is performed, a load lock is used. There was also a problem that oxygen had to be removed by using the above method.
【０００５】一方、アルミ配線形成後に形成されるＳＯ
Ｇ膜は、通常４５０℃以下の低温で形成されるため、ア
ルミ配線の溶解などは起こらないものの、吸水が激しい
等、その膜質が悪いという欠点がある。熱処理温度を上
げれば膜質の改善は可能であるが、通常行われる窒素雰
囲気中での熱処理の場合、９００℃以上の高温で熱処理
しなければ、ＢＰＳＧ膜と同等の膜質が得られないこと
からあまり現実的ではない。On the other hand, the SO formed after the aluminum wiring is formed.
Since the G film is usually formed at a low temperature of 450 ° C. or lower, the aluminum wiring is not melted, but it has a drawback that the film quality is poor such as severe water absorption. The film quality can be improved by raising the heat treatment temperature, but in the case of heat treatment in a nitrogen atmosphere that is usually performed, unless the heat treatment is performed at a high temperature of 900 ° C. or higher, the film quality equivalent to that of the BPSG film cannot be obtained, so much. Not realistic.
【０００６】本発明は上記したような従来技術の問題点
に鑑みなされたものであり、その主な目的は、ＢＰＳＧ
膜と同程度の膜質を有するＳＯＧ塗布膜を７００℃以下
の低温の熱処理でも容易に形成でき、かつＢＰＳＧリフ
ロー法以上の平坦化が可能な半導体装置の製造方法を提
供することにある。The present invention has been made in view of the above problems of the prior art, and the main purpose thereof is BPSG.
An object of the present invention is to provide a method for manufacturing a semiconductor device, which can easily form an SOG coating film having a film quality similar to that of a film even by a low-temperature heat treatment at 700 ° C. or less and which can be planarized more than a BPSG reflow method.
【０００７】[0007]
【課題を解決するための手段】上述した目的は本発明に
よれば、半導体基板上にＳＯＧ液を塗布する過程と、該
ＳＯＧ液が塗布された半導体基板を水蒸気が存在する雰
囲気下で熱処理する過程とを含むことを特徴とする半導
体装置の製造方法を提供することにより達成される。According to the present invention, the above-described object is to apply a SOG liquid onto a semiconductor substrate, and heat the semiconductor substrate coated with the SOG liquid in an atmosphere containing water vapor. And a method for manufacturing a semiconductor device.
【０００８】[0008]
【作用】このように、高温の水蒸気雰囲気下では酸化膜
中のシリコンと酸素との結合が部分的に加水分解され、
その酸化膜中での物質の拡散が容易になるため、ＳＯＧ
液中のシラノール基の脱水縮合反応及び有機物脱離反応
が促進されることから、ＳＯＧ液が塗布された半導体基
板を水蒸気が存在する雰囲気下で熱処理することで、Ｓ
ＯＧ塗布膜に於けるシラノール基の脱水縮合反応及び有
機物脱離反応をより完全に行うことが可能となる。更
に、上記各反応は酸素雰囲気下では不活性ガス雰囲気中
よりも容易であることから、水蒸気及び酸素を含む雰囲
気下で熱処理することにより、一層その反応を促進する
ことができる。As described above, in a high temperature steam atmosphere, the bond between silicon and oxygen in the oxide film is partially hydrolyzed,
Since the diffusion of the substance in the oxide film is facilitated, SOG
Since the dehydration condensation reaction and organic substance elimination reaction of the silanol groups in the liquid are promoted, the semiconductor substrate coated with the SOG liquid is heat-treated in the presence of water vapor to obtain S.
It is possible to more completely carry out the dehydration condensation reaction of silanol groups and the organic substance elimination reaction in the OG coating film. Furthermore, since each of the above reactions is easier in an oxygen atmosphere than in an inert gas atmosphere, the reaction can be further promoted by heat treatment in an atmosphere containing water vapor and oxygen.
【０００９】[0009]
【実施例】以下、本発明の好適実施例を添付の図面につ
いて詳しく説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings.
【００１０】図１は、本発明が適用された半導体装置の
ＳＯＧ塗布膜形成手順の概略説明図である。FIG. 1 is a schematic explanatory diagram of the SOG coating film forming procedure of a semiconductor device to which the present invention is applied.
【００１１】まず、図１（ａ）に示すように、半導体基
板１上に、１層目のポリシリコン配線２を形成し、その
後プラズマＣＶＤ法により、酸化膜３（厚さ４０００オ
ングストローム）を形成する。次に、図１（ｂ）に示す
ように、ＳＯＧ液を回転塗布し、これを水素６５％、酸
素３５％を混合し、燃焼させたガス（水蒸気と酸素の混
合ガス）の雰囲気下にて６５０℃で３０分間の熱処理を
行い、ＳＯＧ塗布膜４を形成する。次に、図１（ｃ）に
示すように、２層目のポリシリコン配線５を形成する。First, as shown in FIG. 1A, a first-layer polysilicon wiring 2 is formed on a semiconductor substrate 1, and then an oxide film 3 (thickness: 4000 angstrom) is formed by a plasma CVD method. To do. Next, as shown in FIG. 1 (b), the SOG liquid was spin-coated and mixed with hydrogen (65%) and oxygen (35%) and burned in an atmosphere of gas (mixed gas of water vapor and oxygen). Heat treatment is performed at 650 ° C. for 30 minutes to form the SOG coating film 4. Next, as shown in FIG. 1C, a second layer polysilicon wiring 5 is formed.
【００１２】このように、熱処理過程を水蒸気が存在す
る雰囲気下で行うことにより、ＳＯＧ塗布膜におけるシ
ラノール基の脱水縮合反応及び有機物の脱離をより完全
に行うことができ、ＢＰＳＧ膜と同等の膜質を有するＳ
ＯＧ塗布膜が容易に形成されることとなる。As described above, by performing the heat treatment process in an atmosphere in which water vapor is present, the dehydration condensation reaction of silanol groups in the SOG coating film and the elimination of organic substances can be more completely performed, which is equivalent to that of the BPSG film. S with film quality
The OG coating film is easily formed.
【００１３】尚、本発明は上記実施例に限定されるもの
ではなく、例えば上記実施例では、水素６５％、酸素３
５％を混合した雰囲気にて熱処理を行ったが、これにア
ルゴン、窒素などの不活性ガスを希釈ガスとして混合し
ても良いことは云うまでもない。また、水素の割合も、
６３％または６０％等、６５％以外で熱処理を行うこと
も考えられる。更に熱処理温度も、７００℃または６０
０℃等、配線層などの各層に悪影響を及ぼすことのない
７００℃以下の任意の温度に設定して行うことも考えら
れる。The present invention is not limited to the above embodiment, and in the above embodiment, for example, hydrogen 65%, oxygen 3
Although the heat treatment was performed in an atmosphere in which 5% was mixed, it goes without saying that an inert gas such as argon or nitrogen may be mixed as a diluent gas. Also, the proportion of hydrogen is
It is also conceivable to perform the heat treatment at a rate other than 65%, such as 63% or 60%. Further, the heat treatment temperature is 700 ° C. or 60
It is also conceivable that the temperature may be set to an arbitrary temperature of 700 ° C. or less, such as 0 ° C., which does not adversely affect each layer such as a wiring layer.
【００１４】[0014]
【発明の効果】以上の説明により明らかなように、本発
明によれば、半導体基板上にＳＯＧ液を塗布し、これを
水蒸気が存在する雰囲気にて熱処理することにより、Ｓ
ＯＧ塗布膜におけるシラノール基の脱水縮合反応および
有機物脱離反応をより完全に行うことになり、ＢＰＳＧ
膜と同等の膜質を有するＳＯＧ塗布膜を形成し、比較的
低温での平坦化を行うことが可能となる。更に、上記各
反応は酸素雰囲気下では不活性ガス雰囲気中よりも容易
であることから、水蒸気及び酸素を含む雰囲気下で熱処
理することにより一層その効果が高くなる。As is apparent from the above description, according to the present invention, the SOG liquid is applied onto the semiconductor substrate and heat-treated in an atmosphere in which water vapor is present.
The dehydration condensation reaction of the silanol groups and the organic substance elimination reaction in the OG coating film will be carried out more completely.
It becomes possible to form the SOG coating film having the same film quality as the film and perform the planarization at a relatively low temperature. Further, since each reaction described above is easier in an oxygen atmosphere than in an inert gas atmosphere, the effect is further enhanced by heat treatment in an atmosphere containing water vapor and oxygen.
【図１】（ａ）〜（ｃ）は、本発明が適用された半導体
装置のＳＯＧ塗布膜形成手順の概略説明図である。1A to 1C are schematic explanatory views of an SOG coating film forming procedure of a semiconductor device to which the present invention is applied.
１ 半導体基板 ２ １層目のポリシリコン配線 ３ 酸化膜 ４ ＳＯＧ塗布膜 ５ ２層目のポリシリコン配線 1 semiconductor substrate 2 first layer polysilicon wiring 3 oxide film 4 SOG coating film 5 second layer polysilicon wiring
Claims (4)
程と、 該ＳＯＧ液が塗布された半導体基板を水蒸気が存在する
雰囲気下で熱処理する過程とを含むことを特徴とする半
導体装置の製造方法。1. A method of manufacturing a semiconductor device, comprising: a step of applying an SOG liquid on a semiconductor substrate; and a step of heat-treating the semiconductor substrate applied with the SOG liquid in an atmosphere in which water vapor exists. .
液を塗布した後に連続して行うことを特徴とする請求項
１に記載の半導体装置の製造方法。2. The heat treatment is performed on the semiconductor substrate by SOG.
The method for manufacturing a semiconductor device according to claim 1, wherein the method is performed continuously after applying the liquid.
気下で行うことを特徴とする請求項１若しくは請求項２
に記載の半導体装置の製造方法。3. The method according to claim 1, wherein the heat treatment is performed in an oxygen atmosphere containing water vapor.
A method of manufacturing a semiconductor device according to item 1.
性ガスからなる雰囲気下で行うことを特徴とする請求項
１乃至請求項３のいずれかに記載の半導体装置の製造方
法。4. The method for manufacturing a semiconductor device according to claim 1, wherein the heat treatment is performed in an atmosphere composed of water vapor, oxygen and an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20022593A JPH0737879A (en) | 1993-07-19 | 1993-07-19 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20022593A JPH0737879A (en) | 1993-07-19 | 1993-07-19 | Method of manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0737879A true JPH0737879A (en) | 1995-02-07 |
Family
ID=16420895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20022593A Withdrawn JPH0737879A (en) | 1993-07-19 | 1993-07-19 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737879A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976966A (en) * | 1996-11-05 | 1999-11-02 | Yamaha Corporation | Converting a hydrogen silsesquioxane film to an oxide using a first heat treatment and a second heat treatment with the second heat treatment using rapid thermal processing |
| US6319847B1 (en) | 1997-03-31 | 2001-11-20 | Nec Corporation | Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique |
-
1993
- 1993-07-19 JP JP20022593A patent/JPH0737879A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976966A (en) * | 1996-11-05 | 1999-11-02 | Yamaha Corporation | Converting a hydrogen silsesquioxane film to an oxide using a first heat treatment and a second heat treatment with the second heat treatment using rapid thermal processing |
| US6319847B1 (en) | 1997-03-31 | 2001-11-20 | Nec Corporation | Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001003 |