JPH0737851A - Cleaning device - Google Patents
Cleaning deviceInfo
- Publication number
- JPH0737851A JPH0737851A JP5200234A JP20023493A JPH0737851A JP H0737851 A JPH0737851 A JP H0737851A JP 5200234 A JP5200234 A JP 5200234A JP 20023493 A JP20023493 A JP 20023493A JP H0737851 A JPH0737851 A JP H0737851A
- Authority
- JP
- Japan
- Prior art keywords
- hydrofluoric acid
- pure water
- tank
- circulating
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/50—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/80—Forming a predetermined ratio of the substances to be mixed
- B01F35/82—Forming a predetermined ratio of the substances to be mixed by adding a material to be mixed to a mixture in response to a detected feature, e.g. density, radioactivity, consumed power or colour
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造に使
用される半導体ウエハの洗浄装置に関し、特に、製造工
程において半導体ウエハをフッ酸で洗浄するための洗浄
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for cleaning semiconductor wafers used in the manufacture of semiconductor devices, and more particularly to an apparatus for cleaning semiconductor wafers with hydrofluoric acid in the manufacturing process.
【０００２】[0002]
【従来の技術】半導体装置の製造において、半導体ウエ
ハの表面は清浄に保つ必要がある。なぜならば、例え
ば、フォトエッチングの際に半導体ウエハ表面に異物が
付着している等の汚染があると、配線ショートや断線の
原因となり、また、金属を含む異物が半導体ウエハ表面
に付着したまま該半導体ウエハを加熱すると、その部分
が合金化してｐｎ接合をショートさせてしまう等の恐れ
があるからである。2. Description of the Related Art In the manufacture of semiconductor devices, it is necessary to keep the surface of a semiconductor wafer clean. This is because, for example, contamination such as foreign matter adhering to the surface of the semiconductor wafer during photo-etching may cause a wiring short circuit or disconnection, and the foreign matter containing a metal may remain attached to the surface of the semiconductor wafer. This is because if the semiconductor wafer is heated, that portion may be alloyed and the pn junction may be short-circuited.
【０００３】これらを防止するため、酸化膜生成前の前
洗浄、フォトエッチング後の後洗浄等の洗浄が必要であ
るが、従来は、図２に示すように、半導体ウエハ３を載
置したウエハキャリア２を処理槽１中に浸漬し、フッ酸
はバルブ１６を開けて薬品タンク４から供給ポンプ５に
より処理槽１へ供給し、一方、純水６はバルブ１７を開
けて処理槽１へ供給し、該フッ酸と純水を循環ポンプ７
により循環させながら、フィルター８により濾過し、均
一に混合しながら、半導体ウエハ３を洗浄していた。な
お、１２及び１４は循環用のバルブ、１３及び１５は廃
液用のバルブである。In order to prevent these, cleaning such as pre-cleaning before oxide film formation and post-cleaning after photo-etching is necessary. Conventionally, as shown in FIG. 2, a wafer on which a semiconductor wafer 3 is mounted is mounted. The carrier 2 is immersed in the treatment tank 1, and hydrofluoric acid is supplied from the chemical tank 4 to the treatment tank 1 by the supply pump 5 by opening the valve 16, while pure water 6 is supplied to the treatment tank 1 by opening the valve 17. Then, the hydrofluoric acid and pure water are circulated by a pump 7
The semiconductor wafer 3 was washed while being circulated by, filtered by the filter 8 and uniformly mixed. In addition, 12 and 14 are valves for circulation, and 13 and 15 are valves for waste liquid.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、前記従
来の洗浄装置においては、フッ酸と純水の混合組成比の
再現精度に関して、最小でも２％の誤差が生じ、また、
均一性も比較的低かった。このため、該混合処理液によ
る半導体ウエハのエッチングにおいて、所望のエッチン
グレートが実現しにくいという問題があった。However, in the above-mentioned conventional cleaning apparatus, an error of at least 2% occurs in the reproducibility of the mixed composition ratio of hydrofluoric acid and pure water, and
The uniformity was also relatively low. Therefore, there is a problem in that it is difficult to achieve a desired etching rate when etching a semiconductor wafer with the mixed treatment liquid.
【０００５】そこで本発明は、フッ酸と純水との混合処
理液の混合組成比の再現精度、及び均一性が高く、所望
のエッチング量が実現できるような洗浄装置を提供する
ことを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a cleaning device which has high reproducibility and uniformity of the mixing composition ratio of a mixed treatment liquid of hydrofluoric acid and pure water and can realize a desired etching amount. To do.
【０００６】[0006]
【課題を解決するための手段】本発明の洗浄装置は、上
記課題を解決するために、洗浄を施す半導体ウエハを内
包し、フッ酸を純水で希釈した処理液が入れられる処理
槽と、該処理槽に送り込まれた純水とフッ酸が均一に混
合するように、該処理液を循環させるための例えば循環
ポンプ及びフィルター等を有する循環系と、循環中の処
理液の濃度を計測し、また、その変動を感知する、フッ
素イオン濃度計と、該フッ素イオン濃度計の計測に基づ
いて、所定量の純水及びフッ酸を前記処理槽に送り込む
ため、前記純水及びフッ酸の流量を制御する流量制御器
とを有する。In order to solve the above-mentioned problems, a cleaning apparatus of the present invention includes a processing tank containing a semiconductor wafer to be cleaned and containing a processing solution obtained by diluting hydrofluoric acid with pure water. In order to uniformly mix pure water and hydrofluoric acid fed into the treatment tank, a circulation system having, for example, a circulation pump and a filter for circulating the treatment liquid, and a concentration of the treatment liquid in circulation are measured. Further, the flow rate of the pure water and the hydrofluoric acid is measured in order to feed a predetermined amount of pure water and hydrofluoric acid into the processing tank based on the measurement of the fluorine ion concentration meter and the fluorine ion concentration meter that senses the fluctuation. And a flow rate controller for controlling.
【０００７】[0007]
【作用】本発明においては、流量制御器により純水及び
フッ酸の流量を制御しながら、処理槽内へ純水及びフッ
酸を供給し、該処理液中に洗浄を施す半導体ウエハを浸
漬し、該処理液により該半導体ウエハに付着した塵を除
去し、また不要な例えば二酸化シリコン膜等をエッチン
グして除去する。In the present invention, the flow rate controller controls the flow rates of pure water and hydrofluoric acid, while supplying pure water and hydrofluoric acid into the processing bath and immersing the semiconductor wafer to be cleaned in the processing solution. Dust adhering to the semiconductor wafer is removed by the treatment liquid, and unnecessary silicon dioxide film or the like is removed by etching.
【０００８】まず、例えば循環ポンプにより、前記処理
槽に送り込まれた純水とフッ酸とが均一に混合するよう
に該処理液を循環させ、電気的にフッ化物イオンを感知
するフッ素イオン濃度計により、該循環中の処理液の濃
度を計測し、濃度の変動が無くなり一定になった後、前
記流量制御器により、所定のフッ素イオン濃度になるよ
うに調整する。これは例えば、所定のフッ素イオン濃度
以下の場合は、補正量のフッ酸を、該流量制御器により
途中の関連するポンプを開栓する等して、前記処理槽に
供給し、逆に所定のフッ素イオン濃度以上の場合は、補
正量の純水を前記処理槽に供給することにより行なう。First, for example, by a circulation pump, the treatment liquid is circulated so that the pure water and hydrofluoric acid fed into the treatment tank are uniformly mixed, and a fluoride ion concentration meter for electrically sensing fluoride ions is provided. Thus, the concentration of the processing liquid in the circulation is measured, and after the fluctuation of the concentration becomes constant and becomes constant, the flow rate controller adjusts to a predetermined fluorine ion concentration. For example, when the concentration of fluorine ions is lower than a predetermined value, a correction amount of hydrofluoric acid is supplied to the processing tank by opening the related pump on the way by the flow rate controller, and the like. If the concentration is higher than the fluorine ion concentration, a correction amount of pure water is supplied to the processing tank.
【０００９】然る後、前記処理槽内に、キャリア等によ
り半導体ウエハを入れ、前記調整済の処理液を再び循環
させ、例えばフィルターで該処理液を濾過しながら洗浄
を行なう。After that, the semiconductor wafer is put into the processing tank by a carrier or the like, the adjusted processing liquid is circulated again, and the cleaning is performed while filtering the processing liquid with a filter, for example.
【００１０】[0010]
【実施例】以下、図１を用いて、本発明に係る洗浄装置
の一実施例を説明する。図１は、実施例における洗浄装
置のシステム構成を示すブロック図である。EXAMPLE An example of the cleaning apparatus according to the present invention will be described below with reference to FIG. FIG. 1 is a block diagram showing the system configuration of the cleaning apparatus in the embodiment.
【００１１】本実施例の洗浄装置は、処理槽１と、バル
ブ１２と、フッ素イオン濃度計１０が中に設置されてい
る濃度監視箱９と、循環ポンプ７と、フィルター８と、
バルブ１４とが、この順に互いに連結されている状態で
備えられており、洗浄処理液が循環する循環系２１と、
開閉動作により純水の放出及び遮断を制御するバルブ１
７と、フッ酸が貯蔵されている薬品タンク４と、開閉動
作によりフッ酸の放出及び遮断を制御するバルブ１６
と、薬品タンク４に直結しており、薬品タンク４からフ
ッ酸をバルブ１６へと送出する供給ポンプ５と、循環系
２１へのフッ酸及び純水の供給量を管理する流量制御器
１１と、循環ポンプ７と濃度監視箱９との中間部分と処
理槽１を結ぶ経路途中に位置する廃液用バルブ１３と、
循環系２１の脇に位置する廃液用バルブ１５とを備え
る。処理槽１は、内槽１ａと外槽１ｂとを備えており、
内槽１ａ中に処理液を流入し、該処理液に半導体ウエハ
３を装填したキャリア２を浸漬して洗浄を行なうが、外
槽１ｂは内槽１ａを内包するように設けられており、洗
浄中、内槽１ａから溢れ出た処理液を受け止め、該処理
液を循環系２１内へと流入させる。The cleaning apparatus of this embodiment comprises a treatment tank 1, a valve 12, a concentration monitoring box 9 in which a fluorine ion concentration meter 10 is installed, a circulation pump 7, a filter 8,
A valve 14 is provided in such a state that they are connected to each other in this order, and a circulation system 21 in which the cleaning treatment liquid circulates,
Valve 1 that controls the release and shutoff of pure water by opening and closing operation
7, a chemical tank 4 in which hydrofluoric acid is stored, and a valve 16 for controlling release and shutoff of hydrofluoric acid by opening and closing operations.
And a supply pump 5 that is directly connected to the chemical tank 4 and sends hydrofluoric acid from the chemical tank 4 to the valve 16, and a flow rate controller 11 that controls the supply amount of hydrofluoric acid and pure water to the circulation system 21. A waste liquid valve 13 located in the middle of a path connecting the intermediate portion between the circulation pump 7 and the concentration monitoring box 9 and the processing tank 1,
The waste liquid valve 15 is provided beside the circulation system 21. The processing tank 1 includes an inner tank 1a and an outer tank 1b,
Cleaning is carried out by injecting the processing liquid into the inner tank 1a and immersing the carrier 2 loaded with the semiconductor wafer 3 in the processing liquid, while the outer tank 1b is provided so as to include the inner tank 1a. Inside, the processing liquid overflowing from the inner tank 1a is received, and the processing liquid is caused to flow into the circulation system 21.
【００１２】処理液を生成するためには、流量制御器１
１によりバルブ１７を開栓して、所定量の純水６を処理
槽１に供給し、次に、流量制御器１１によりバルブ１６
を開栓して、薬品タンク４から供給ポンプ５により所定
量のフッ酸（ＨＦ）を処理槽１に供給する。然る後、廃
液用バルブ１３を閉栓した状態で、バルブ１２及び１４
を開栓し、循環ポンプ７を作動させ、循環系２１内に処
理液を循環させながらフッ酸と純水の混合を均一にす
る。In order to generate the processing liquid, the flow rate controller 1
1, the valve 17 is opened, a predetermined amount of pure water 6 is supplied to the processing tank 1, and then the flow controller 11 is used to open the valve 16.
And a predetermined amount of hydrofluoric acid (HF) is supplied from the chemical tank 4 to the processing tank 1 by the supply pump 5. Then, while the waste liquid valve 13 is closed, the valves 12 and 14 are closed.
And the circulation pump 7 is operated to circulate the treatment liquid in the circulation system 21 to make the mixing of hydrofluoric acid and pure water uniform.
【００１３】そして、フッ化物イオンを電気的に感知し
電圧によりその濃度を表示するフッ素イオン濃度計１０
により、この循環中処理液のフッ酸濃度を計測し、フッ
素イオン濃度計１０からの出力値が一定になれば、処理
液の混合具合が完全に均一になったものとして循環を中
止する。Then, a fluoride ion concentration meter 10 which electrically senses the fluoride ions and displays the concentration by voltage.
Thus, the concentration of hydrofluoric acid in the circulating treatment liquid is measured, and when the output value from the fluorine ion concentration meter 10 becomes constant, the mixing condition of the treatment liquid is considered to be completely uniform, and the circulation is stopped.
【００１４】然る後、流量制御器１１により、所定のフ
ッ素イオン濃度になるように調整する。これは例えば、
所定のフッ素イオン濃度以下の場合は、補正量のフッ酸
を、流量制御器１１によりバルブ１６を開栓し、薬品タ
ンク４から処理槽１へ供給し、逆に所定のフッ素イオン
濃度以上の場合は、バルブ１７を開栓し、補正量の純水
６を処理槽１に供給することにより行なう。After that, the flow rate controller 11 adjusts the concentration of the fluorine ions to a predetermined value. This is for example
When the concentration of the fluorine ion is less than the predetermined value, a correction amount of hydrofluoric acid is supplied from the chemical tank 4 to the processing tank 1 by opening the valve 16 by the flow controller 11, and when the concentration of the fluorine ion is more than the predetermined value. Is performed by opening the valve 17 and supplying a correction amount of pure water 6 to the processing tank 1.
【００１５】然る後、キャリア２に搭載した半導体ウエ
ハ３を内槽１ａ内に入れ、濃度調整済の上記処理液を再
び循環系２１に循環させながら洗浄を行なうが、この時
フィルター８により、循環中の処理液を濾過しながら行
なう。After that, the semiconductor wafer 3 mounted on the carrier 2 is put into the inner tank 1a, and cleaning is performed while circulating the processing solution whose concentration has been adjusted again in the circulation system 21. At this time, the filter 8 is used. The treatment liquid in circulation is filtered.
【００１６】このようにして半導体ウエハ３の洗浄が完
了した後、バルブ１２及び１４を閉栓し、廃液用バルブ
１３及び１５を開栓して、処理液を廃棄する。After the cleaning of the semiconductor wafer 3 is completed in this way, the valves 12 and 14 are closed and the waste liquid valves 13 and 15 are opened to discard the processing liquid.
【００１７】[0017]
【発明の効果】以上説明したように本発明に係る洗浄装
置においては、処理液を循環させながらフッ酸の濃度を
計測するフッ素イオン濃度計により、フッ酸濃度及びそ
の変動を正確に読み取ってフッ素イオン濃度を所定値に
保つよう制御することにより、フッ酸と純水との混合処
理液の混合組成比の再現精度、及び均一性が高くなり、
その結果、エッチング量のばらつきの少ない洗浄装置が
実現できる。As described above, in the cleaning apparatus according to the present invention, the concentration of hydrofluoric acid and its fluctuation are accurately read by the fluorine ion concentration meter which measures the concentration of hydrofluoric acid while circulating the treatment liquid. By controlling the ion concentration so as to keep it at a predetermined value, the reproducibility and uniformity of the mixed composition ratio of the mixed treatment liquid of hydrofluoric acid and pure water are increased,
As a result, it is possible to realize a cleaning device with less variation in etching amount.
【図１】本発明の一実施例に係る洗浄装置のシステム構
成を示すブロック図である。FIG. 1 is a block diagram showing a system configuration of a cleaning apparatus according to an embodiment of the present invention.
【図２】従来の洗浄装置のシステム構成を示すブロック
図である。FIG. 2 is a block diagram showing a system configuration of a conventional cleaning device.
１ 処理槽 ３ 半導体ウエハ ４ 薬品タンク ５ 供給ポンプ ６ 純水 ７ 循環ポンプ ８ フィルター １０ フッ素イオン濃度計 １１ 流量制御器 １２、１４ 処理液循環系のバルブ １６ フッ酸供給用のバルブ １７ 純水供給用のバルブ 1 Processing Tank 3 Semiconductor Wafer 4 Chemical Tank 5 Supply Pump 6 Pure Water 7 Circulation Pump 8 Filter 10 Fluorine Ion Concentration Meter 11 Flow Controllers 12 and 14 Processing Liquid Circulation Valve 16 Hydrofluoric Acid Supply Valve 17 Pure Water Supply Valve
Claims (1)
導体ウエハを洗浄する洗浄装置において、 洗浄を施す半導体ウエハを内包し、前記処理液が入れら
れる処理槽と、 該処理槽に送り込まれた前記処理液を循環させるための
循環系と、 該循環系を循環中の前記処理液のフッ素イオン濃度を計
測するフッ素イオン濃度計と、 該フッ素イオン濃度計の計測に従って、前記処理槽に送
り込む前記純水及びフッ酸の流量を制御する流量制御器
と、 を有することを特徴とする洗浄装置。1. A cleaning apparatus for cleaning a semiconductor wafer with a processing solution obtained by diluting hydrofluoric acid with pure water, the processing tank containing a semiconductor wafer to be cleaned, and a processing tank in which the processing solution is placed, and the processing tank is fed into the processing tank. A circulation system for circulating the treatment liquid, a fluorine ion concentration meter for measuring the fluorine ion concentration of the treatment liquid circulating in the circulation system, and feeding into the treatment tank according to the measurement of the fluorine ion concentration meter And a flow rate controller for controlling the flow rates of the pure water and hydrofluoric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5200234A JPH0737851A (en) | 1993-07-20 | 1993-07-20 | Cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5200234A JPH0737851A (en) | 1993-07-20 | 1993-07-20 | Cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0737851A true JPH0737851A (en) | 1995-02-07 |
Family
ID=16421045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5200234A Withdrawn JPH0737851A (en) | 1993-07-20 | 1993-07-20 | Cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737851A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH112806A (en) * | 1997-03-21 | 1999-01-06 | Lg Electron Inc | Etching device |
| JP2002278473A (en) * | 2001-03-21 | 2002-09-27 | Sony Corp | Method for manufacturing display panel |
| KR20030005777A (en) * | 2001-07-10 | 2003-01-23 | 삼성전자 주식회사 | Semiconductor cleaning process using electrolytic ionized water and diluted HF solution at the same time |
| US6802911B2 (en) * | 2001-09-19 | 2004-10-12 | Samsung Electronics Co., Ltd. | Method for cleaning damaged layers and polymer residue from semiconductor device |
| KR100455904B1 (en) * | 1997-09-09 | 2005-01-13 | 동경 엘렉트론 주식회사 | Cleaning process and cleaning plant |
| US7214537B2 (en) * | 2001-10-08 | 2007-05-08 | Advanced Technology Materials, Inc. | Real-time component monitoring and replenishment system for multicomponent fluids |
| CN108834528A (en) * | 2018-06-19 | 2018-11-20 | 利辛县风雅颂机电科技有限公司 | A kind of chemical fertilizer spraying device |
| CN110241538A (en) * | 2019-06-27 | 2019-09-17 | 漳州泰里斯生物科技有限公司 | A kind of antibacterial processing equipment of fabric and its control method |
| CN111354637A (en) * | 2020-02-28 | 2020-06-30 | 通威太阳能(眉山)有限公司 | Method for washing graphite boat by cyclic utilization of hydrofluoric acid |
-
1993
- 1993-07-20 JP JP5200234A patent/JPH0737851A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH112806A (en) * | 1997-03-21 | 1999-01-06 | Lg Electron Inc | Etching device |
| US8043466B1 (en) | 1997-03-21 | 2011-10-25 | Lg Display Co., Ltd | Etching apparatus |
| KR100455904B1 (en) * | 1997-09-09 | 2005-01-13 | 동경 엘렉트론 주식회사 | Cleaning process and cleaning plant |
| JP2002278473A (en) * | 2001-03-21 | 2002-09-27 | Sony Corp | Method for manufacturing display panel |
| KR20030005777A (en) * | 2001-07-10 | 2003-01-23 | 삼성전자 주식회사 | Semiconductor cleaning process using electrolytic ionized water and diluted HF solution at the same time |
| US6802911B2 (en) * | 2001-09-19 | 2004-10-12 | Samsung Electronics Co., Ltd. | Method for cleaning damaged layers and polymer residue from semiconductor device |
| US7214537B2 (en) * | 2001-10-08 | 2007-05-08 | Advanced Technology Materials, Inc. | Real-time component monitoring and replenishment system for multicomponent fluids |
| CN108834528A (en) * | 2018-06-19 | 2018-11-20 | 利辛县风雅颂机电科技有限公司 | A kind of chemical fertilizer spraying device |
| CN108834528B (en) * | 2018-06-19 | 2020-08-21 | 利辛县风雅颂机电科技有限公司 | Chemical fertilizer sprinkler |
| CN110241538A (en) * | 2019-06-27 | 2019-09-17 | 漳州泰里斯生物科技有限公司 | A kind of antibacterial processing equipment of fabric and its control method |
| CN111354637A (en) * | 2020-02-28 | 2020-06-30 | 通威太阳能(眉山)有限公司 | Method for washing graphite boat by cyclic utilization of hydrofluoric acid |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3338134B2 (en) | Semiconductor wafer processing method | |
| US5722441A (en) | Electronic device process apparatus | |
| JP3154814B2 (en) | Semiconductor wafer cleaning method and cleaning apparatus | |
| US20070034231A1 (en) | Substrate treating apparatus and method | |
| KR20070004609A (en) | System and method for selective etching of silicon nitride during substrate processing | |
| US8372299B2 (en) | Substrate treating apparatus and substrate treating method | |
| US20060021634A1 (en) | Method and apparatus for creating ozonated process solutions having high ozone concentration | |
| JP2018117032A (en) | Substrate processing apparatus | |
| JP7099172B2 (en) | How to operate the washing water manufacturing system for electronic parts and the washing water manufacturing system for electronic parts | |
| KR101263537B1 (en) | Point-of-use process control blender systems and corresponding methods | |
| JPH0737851A (en) | Cleaning device | |
| JP2000003895A (en) | Cleaning processing method and cleaning processor thereof | |
| JPH1174244A (en) | Cleaning method for semiconductor wafer | |
| US5643368A (en) | Process of cleaning a substrate and apparatus for cleaning a substrate | |
| KR100237736B1 (en) | Cleaning method of silicon substrate | |
| US20050271985A1 (en) | Method, apparatus and system for rinsing substrate with pH-adjusted rinse solution | |
| JP7224117B2 (en) | SUBSTRATE PROCESSING APPARATUS AND PROCESSING LIQUID REUSE METHOD | |
| JPH03107477A (en) | Method and device for wet-treating semiconductor material | |
| JP2002096030A (en) | Treating device using nozzle | |
| JPH0634890B2 (en) | Preparation method of chemicals | |
| JP3473662B2 (en) | Wet cleaning equipment | |
| JP2006073945A (en) | Method and device for substrate treatment | |
| JPH05166776A (en) | Washing of semiconductor wafer and its device | |
| JP2001118821A (en) | Washing method | |
| JP2006024890A (en) | Method, equipment, and system for processing substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001003 |