JPH07318446A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPH07318446A JPH07318446A JP7109855A JP10985595A JPH07318446A JP H07318446 A JPH07318446 A JP H07318446A JP 7109855 A JP7109855 A JP 7109855A JP 10985595 A JP10985595 A JP 10985595A JP H07318446 A JPH07318446 A JP H07318446A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- pressure
- substrate
- thin
- locking member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、圧力センサに係り、特
に可動範囲を制限することで、破壊を防止するようにし
た圧力センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure sensor, and more particularly to a pressure sensor which is prevented from being broken by limiting its movable range.
【０００２】[0002]
【従来の技術】圧力センサは工業計測、自動車、医療な
どの分野で広く用いられている。この圧力センサとして
は、電学論Ｃ−１、平成元年０９巻１２号、Ｐ．８２０
乃至Ｐ．８２３に記載された集積化容量形圧力センサが
ある。図２に従来のこの種の圧力センサに設けられた感
圧チップの一例を示す。図において、単結晶シリコンに
より角板状に形成された基板１の中央には、両面がエッ
チングされて薄肉部２が設けられており、ダイヤフラム
を構成している。基板１の片面にはガラス板３が接合さ
れており、ガラス板３と薄肉部２との間には空洞４が形
成されている。2. Description of the Related Art Pressure sensors are widely used in fields such as industrial measurement, automobiles and medical care. As this pressure sensor, there is an electronic theory C-1, Vol. 09, No. 12, 1989, P. 820
Through P. There is an integrated capacitive pressure sensor described in 823. FIG. 2 shows an example of a pressure-sensitive chip provided in a conventional pressure sensor of this type. In the figure, a thin-walled portion 2 is provided by etching both surfaces in the center of a substrate 1 formed of a single crystal silicon in a square plate shape, and constitutes a diaphragm. A glass plate 3 is bonded to one surface of the substrate 1, and a cavity 4 is formed between the glass plate 3 and the thin portion 2.
【０００３】ガラス板３の薄肉部２に対向する面には、
空洞４の容積変化を検出するためのアルミニウム膜など
で形成された電極５が設けられている。またガラス板３
には空洞４に連通する孔６が形成されており、孔６を介
して被測定部の圧力が空洞４内に伝達されるようになっ
ている。そして薄肉部２で構成されるダイヤフラムを変
形させ、空洞４の容量変化を検出して圧力を検知する。On the surface of the glass plate 3 facing the thin portion 2,
An electrode 5 formed of an aluminum film or the like for detecting a change in volume of the cavity 4 is provided. Also glass plate 3
A hole 6 communicating with the cavity 4 is formed in the cavity 4, and the pressure of the measured portion is transmitted into the cavity 4 through the hole 6. Then, the diaphragm formed by the thin portion 2 is deformed, and the change in the capacity of the cavity 4 is detected to detect the pressure.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記の
ように構成された従来の静電容量形圧力センサの感圧チ
ップにあっては、ガラス板３に形成された孔６を介して
空洞４内に過大な圧力が加わると、薄肉部２が破壊して
しまうという問題があった。However, in the pressure sensitive chip of the conventional capacitance type pressure sensor constructed as described above, the inside of the cavity 4 is formed through the hole 6 formed in the glass plate 3. There is a problem that the thin portion 2 is broken when an excessive pressure is applied to the.
【０００５】本発明は、このような状況に鑑みてなされ
たもので、過大な圧力がダイヤフラムを構成する薄肉部
にかかっても、薄肉部が破壊することを防止できる圧力
センサを提供することを目的とする。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a pressure sensor capable of preventing the thin portion from breaking even if an excessive pressure is applied to the thin portion constituting the diaphragm. To aim.
【０００６】[0006]
【課題を解決するための手段】本発明の圧力センサは、
圧力によって変位する可動部（例えば図１の薄肉部５と
厚肉部７）を設けた半導体基板（例えば図１の基板１）
を備える圧力センサにおいて、可動部が所定量変位した
ときに可動部と接触することにより可動部の変位可能な
範囲を制限する可動範囲制限部（例えば図１の係止部材
８）を設けたことを特徴とする。The pressure sensor of the present invention comprises:
A semiconductor substrate (for example, the substrate 1 in FIG. 1) provided with a movable portion (for example, the thin portion 5 and the thick portion 7 in FIG. 1) that is displaced by pressure.
In the pressure sensor including, a movable range limiting section (for example, the locking member 8 in FIG. 1) that limits the movable range of the movable section by contacting the movable section when the movable section is displaced by a predetermined amount is provided. Is characterized by.
【０００７】[0007]
【作用】上記構成の圧力センサにおいては、基板１の薄
肉部５に大きな圧力がかかった場合でも、薄肉部５の厚
肉部７が係止部材８に当接するので、薄肉部５の変形が
所定量以下に押えられ、破壊を防止することができる。In the pressure sensor having the above structure, even if a large pressure is applied to the thin portion 5 of the substrate 1, the thick portion 7 of the thin portion 5 contacts the locking member 8, so that the thin portion 5 is not deformed. It can be prevented from being destroyed by being pressed below a predetermined amount.
【０００８】[0008]
【実施例】以下、本発明の圧力センサの一実施例を図面
を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the pressure sensor of the present invention will be described below with reference to the drawings.
【０００９】図１に本発明の一実施例の構成を示す。図
１において、図２に示す従来例の部分と対応する部分に
は同一符号を付して示し、その説明を適宜省略する。本
実施例の特徴は基板１のダイヤフラム薄肉部２の中心に
厚肉部７を設け、基板１の図中下面に係止部材８を接合
した点にある。FIG. 1 shows the configuration of an embodiment of the present invention. In FIG. 1, portions corresponding to those of the conventional example shown in FIG. 2 are designated by the same reference numerals, and the description thereof will be omitted as appropriate. The feature of this embodiment is that a thick portion 7 is provided at the center of the thin diaphragm portion 2 of the substrate 1, and a locking member 8 is joined to the lower surface of the substrate 1 in the drawing.
【００１０】基板１は表面の結晶方位が（１００）面の
単結晶シリコンウエハでほぼ正方形状に形成されてお
り、中央の薄肉部２及び厚肉部７はアルカリ系異方性エ
ッチングにより形成されている。また係止部材８はガラ
ス板で基板１と等しい外形寸法に形成されており、中央
に台座状の突出部９が設けられている。さらに突出部９
には板厚方向に貫通する貫通孔１０が形成されている。
そして電極側ガラス３と係止部材８とは基板１の両面に
陽極接合により一体に接合されている。The substrate 1 is a single crystal silicon wafer whose surface has a crystal orientation of (100) and is formed in a substantially square shape. The thin portion 2 and the thick portion 7 at the center are formed by alkaline anisotropic etching. ing. Further, the locking member 8 is formed of a glass plate with the same outer dimensions as the substrate 1, and a pedestal-like protruding portion 9 is provided in the center. Further protruding portion 9
A through hole 10 is formed in the plate so as to penetrate in the plate thickness direction.
The electrode side glass 3 and the locking member 8 are integrally joined to both surfaces of the substrate 1 by anodic bonding.
【００１１】次に本実施例による感圧チップを用いて行
なった実験結果について説明する。実験に用いた感圧チ
ップの各部の寸法は下記の通りである。 ａ：ダイヤフラム長 １９００μｍ ｂ：厚肉部（メサ）長 １４００μｍ ｃ：薄肉部厚さ ５μｍ ｄ：厚肉部厚さ ４０μｍ ｅ：電極と基板間及び厚肉部と突出部間のギャップ
２μｍNext, the results of experiments conducted using the pressure-sensitive chip according to this embodiment will be described. The dimensions of each part of the pressure-sensitive chip used in the experiment are as follows. a: diaphragm length 1900 μm b: thick portion (mesa) length 1400 μm c: thin portion thickness 5 μm d: thick portion thickness 40 μm e: gap between electrode and substrate and between thick portion and protruding portion
2 μm
【００１２】上記のように構成された感圧チップにおい
て、空洞４内に１kg／cm2 の差圧をかけたときも、ダイ
ヤフラム薄肉部２の破壊はなかった。In the pressure-sensitive chip constructed as described above, even when a differential pressure of 1 kg / cm 2 was applied to the inside of the cavity 4, the thin portion 2 of the diaphragm was not broken.
【００１３】本実施例によれば、ダイヤフラム薄肉部２
に破壊圧以上の圧力がかかったときでも、基板１の厚肉
部７の下面が係止部材８の突出部９の上面に当接し、変
形量が規制されるので薄肉部２が破壊することはない。According to this embodiment, the thin diaphragm portion 2
Even when a pressure greater than or equal to the breaking pressure is applied to the thin-walled portion 2, the lower surface of the thick-walled portion 7 of the substrate 1 comes into contact with the upper surface of the protruding portion 9 of the locking member 8 and the deformation amount is restricted, so that the thin-walled portion 2 is broken. There is no.
【００１４】上記実施例では係止部材８がガラスで形成
された場合について説明したが、係止部材８の材質はガ
ラスに限定されるものではない。In the above embodiment, the case where the locking member 8 is made of glass has been described, but the material of the locking member 8 is not limited to glass.
【００１５】[0015]
【発明の効果】以上説明したように、本発明によれば、
可動部の変位を規制する可動範囲制限部を設けたので、
可動部に大きな圧力がかかったときにも、破壊すること
を防止できる。As described above, according to the present invention,
Since the movable range limiting part that regulates the displacement of the movable part is provided,
Even when a large pressure is applied to the movable part, it can be prevented from being broken.
【図１】本発明の圧力センサの一実施例の構成を示す縦
断面図である。FIG. 1 is a vertical sectional view showing a configuration of an embodiment of a pressure sensor of the present invention.
【図２】従来の圧力センサの一例の構成を示す縦断面図
である。FIG. 2 is a vertical cross-sectional view showing the configuration of an example of a conventional pressure sensor.
１ 基板 ２ 薄肉部 ３ ガラス板 ４ 空洞 ７ 厚肉部 ８ 係止部材 ９ 突出部 DESCRIPTION OF SYMBOLS 1 Substrate 2 Thin part 3 Glass plate 4 Cavity 7 Thick part 8 Locking member 9 Projection part
Claims (1)
導体基板を備える圧力センサにおいて、 前記可動部が所定量変位したときに前記可動部と接触す
ることにより前記可動部の変位可能な範囲を制限する可
動範囲制限部を設けたことを特徴とする圧力センサ。1. A pressure sensor including a semiconductor substrate having a movable portion that is displaced by pressure, wherein a movable range of the movable portion is limited by contacting the movable portion when the movable portion is displaced by a predetermined amount. A pressure sensor characterized in that a movable range limiting section is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7109855A JP2643906B2 (en) | 1995-05-09 | 1995-05-09 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7109855A JP2643906B2 (en) | 1995-05-09 | 1995-05-09 | Pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07318446A true JPH07318446A (en) | 1995-12-08 |
| JP2643906B2 JP2643906B2 (en) | 1997-08-25 |
Family
ID=14520906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7109855A Expired - Fee Related JP2643906B2 (en) | 1995-05-09 | 1995-05-09 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2643906B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845533A (en) * | 1981-09-14 | 1983-03-16 | Hitachi Ltd | Pressure detector |
| JPS58151536A (en) * | 1982-03-05 | 1983-09-08 | Hitachi Ltd | Differential pressure detector |
| JPS59155971A (en) * | 1983-02-25 | 1984-09-05 | Hitachi Ltd | High pressure resistant pressure sensor |
| JPS60191950U (en) * | 1984-05-31 | 1985-12-19 | 株式会社東芝 | semiconductor pressure sensor |
-
1995
- 1995-05-09 JP JP7109855A patent/JP2643906B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845533A (en) * | 1981-09-14 | 1983-03-16 | Hitachi Ltd | Pressure detector |
| JPS58151536A (en) * | 1982-03-05 | 1983-09-08 | Hitachi Ltd | Differential pressure detector |
| JPS59155971A (en) * | 1983-02-25 | 1984-09-05 | Hitachi Ltd | High pressure resistant pressure sensor |
| JPS60191950U (en) * | 1984-05-31 | 1985-12-19 | 株式会社東芝 | semiconductor pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2643906B2 (en) | 1997-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970401 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090502 Year of fee payment: 12 |
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| LAPS | Cancellation because of no payment of annual fees |