JPH07302568A - Carbon for ion implantation device and its manufacture - Google Patents
Carbon for ion implantation device and its manufactureInfo
- Publication number
- JPH07302568A JPH07302568A JP6095365A JP9536594A JPH07302568A JP H07302568 A JPH07302568 A JP H07302568A JP 6095365 A JP6095365 A JP 6095365A JP 9536594 A JP9536594 A JP 9536594A JP H07302568 A JPH07302568 A JP H07302568A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- ion implantation
- graphite material
- glassy carbon
- apparent density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体を製造する工程で
使用されるイオン注入装置用カーボン及びその製造法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to carbon for an ion implantation apparatus used in a semiconductor manufacturing process and a method for manufacturing the carbon.
【０００２】[0002]
【従来の技術】半導体に不純物をイオンで注入する技術
は１９７０年代に工業化された技術であり、現在ＬＳＩ
をはじめとして多くのシリコン半導体製品などに広く用
いられている。半導体デバイスにおけるイオン注入は、
シリコンウエハーに目的とする不純物元素をイオン化し
数十〜数百ｅＶのエネルギーに加速して打ち込むため、
操作中に目的とする元素以外の成分が介在しているとシ
リコンウエハーに目的以外の不純物が打ち込まれ、初期
の性能が得られなくなる危険性が生じる。このため、構
成部品は半導体デバイスに対して悪影響を及ぼさない高
純度な材料が要求される。2. Description of the Related Art The technique of implanting impurities into a semiconductor by ions is a technique industrialized in the 1970s, and is currently used in LSIs.
It is widely used in many silicon semiconductor products such as. Ion implantation in semiconductor devices
Since the target impurity element is ionized and implanted into the silicon wafer at an energy of several tens to several hundreds eV,
If a component other than the target element is present during the operation, impurities other than the target may be implanted into the silicon wafer, resulting in a risk that the initial performance cannot be obtained. For this reason, high-purity materials that do not adversely affect the semiconductor device are required for the component parts.
【０００３】イオン注入装置は一般に次のような主要な
構成部からなっている。すなわち、目的とする不純物元
素を含んだ気体を高密度のプラズマ状態にし、プラズマ
によりイオンを発生させるイオン源、発生した正イオン
を電界により引き出すための引き出し部、引き出したイ
オンを目的のイオンに選別するイオン分析部、イオンを
所定のエネルギーにするため静電界でイオンを加速する
加速部、イオンビームを収束する収束部、イオンビーム
をシリコンウエハーの表面に均一に打ち込むために走査
する走査部及びシリコンウエハーにイオンを打ち込むイ
オン打ち込み室から構成されている。これらの各部は高
純度を保持し、かつ異物の混入を防止するために材質及
び構造上の工夫がなされているが、中でもイオン源及び
走査部は高エネルギーのイオンが衝突するため構成材料
からの不純物、異物等が混入し易く他の材料より配慮が
必要である。An ion implanter generally comprises the following major components. That is, the gas containing the target impurity element is put into a high-density plasma state, an ion source that generates ions by the plasma, an extraction part for extracting the generated positive ions by an electric field, and the extracted ions are selected as the target ions. An ion analysis unit, an acceleration unit for accelerating the ions in an electrostatic field to bring the ions to a predetermined energy, a focusing unit for converging the ion beam, a scanning unit for scanning the ion beam uniformly on the surface of the silicon wafer, and silicon. It is composed of an ion implantation chamber that implants ions into the wafer. Each of these parts has been devised in terms of material and structure in order to maintain high purity and prevent contamination of foreign substances, but among them, the ion source and the scanning part are made from the constituent materials because high energy ions collide. Impurities, foreign substances, etc. are likely to be mixed in, so consideration is needed more than other materials.
【０００４】[0004]
【発明が解決しようとする課題】現在、イオン源及び走
査部には容易に高純度が可能な黒鉛材料が用いられてい
る。しかしながら黒鉛材料はコークスなどの微粒子の集
合体であるため、イオンビームでスパッタリングされた
場合、微細な異物が混入し、シリコンウエハー上に付着
して結果的に製品の歩留りを悪くし、発展する半導体デ
バイスの要求に対応することができない。At present, a graphite material that can be easily highly purified is used for the ion source and the scanning section. However, since the graphite material is an aggregate of fine particles such as coke, when sputtered with an ion beam, fine foreign matter is mixed and adheres to the silicon wafer, resulting in poor product yield and development of semiconductors. Unable to meet the demands of the device.
【０００５】本発明はイオン注入工程においてシリコン
ウエハーに及ぼす悪影響が極めて少なく、安定して使用
が可能なイオン注入装置用カーボン及びその製造法を提
供するものである。The present invention provides carbon for an ion implantation apparatus and a method for producing the same, which has a minimal adverse effect on a silicon wafer in the ion implantation step and can be stably used.
【０００６】[0006]
【課題を解決するための手段】本発明者らはかかる現状
に鑑み、従来公知の黒鉛材料について種々検討した結
果、黒鉛材料はピッチなどの結合材とコークスなどの微
粉とを混練した後、粉砕、成形、焼成炭化、さらに黒鉛
化を行って得られるが、コークスなどの微粒子の集合体
は組織上極めて結合力が弱くイオンビームでスパッタし
た場合、比較的容易に異物が発生することが確認され
た。そこで本発明者らは該組織上弱い結合力を補う方法
を鋭意検討した結果、ガラス状炭素をコークスなどの微
粒子の集合体の組織中に含浸することにより結合力を向
上させることが出来ることを見いだし本発明を完成する
に至った。In view of the present situation, the present inventors have made various studies on conventionally known graphite materials, and as a result, the graphite materials are kneaded with a binder such as pitch and a fine powder such as coke and then pulverized. It can be obtained by carrying out molding, firing carbonization, and graphitization, but the aggregate of fine particles such as coke has a very weak binding force on the structure and it is confirmed that foreign matter is relatively easily generated when sputtered with an ion beam. It was Therefore, as a result of intensive studies on the method for compensating for the weak bonding force on the tissue, the present inventors have found that the bonding force can be improved by impregnating the tissue of the aggregate of fine particles such as coke with glassy carbon. The present invention has been completed and the present invention has been completed.
【０００７】本発明は見掛け密度が１．７０〜１．８７
ｇ／cm3のガラス状炭素含浸用黒鉛材料を用い、ガラス
状炭素の含有率が３．５〜７．０重量％、見掛け密度が
１．８５〜１．９５ｇ／cm3及び含有平均気孔率が０．
５〜８％であるイオン注入装置用カーボン並びに上記の
黒鉛材料にガラス状炭素となり得る樹脂を含浸した後、
硬化、焼成炭化、黒鉛化処理し、所望の形状に加工した
後熱処理して高純度精製を行うイオン注入装置用カーボ
ンの製造法に関する。The present invention has an apparent density of 1.70 to 1.87.
Using a graphite material for impregnating glassy carbon of g / cm 3 , the content of glassy carbon is 3.5 to 7.0% by weight, the apparent density is 1.85 to 1.95 g / cm 3, and the average content porosity is Is 0.
After impregnating 5 to 8% of carbon for ion implantation equipment and the above graphite material with a resin that can become glassy carbon,
The present invention relates to a method for producing carbon for an ion implantation apparatus, in which carbon is hardened, calcined and carbonized, graphitized, processed into a desired shape, and then heat-treated for high purity purification.
【０００８】本発明においてガラス状炭素となり得る樹
脂を含浸する前の黒鉛材料の見掛け密度は、１．７０〜
１．８７ｇ／cm3、好ましくは１．７５〜１．８７ｇ／c
m3、より好ましくは１．８０〜１．８７ｇ／cm3の範囲
とされ、１．７０ｇ／cm3未満であると含浸回数を多く
しなければならないため時間を費やすと共に十分に含浸
されない部分が生じ異物の発生が増大する。また１．８
７ｇ／cm3を越えると組織中の気孔径が小さいためガラ
ス状炭素が黒鉛材料の中心部まで含浸されず、使用中に
異物の発生が増大する。なお黒鉛材料としては特に制限
はなく従来公知のものが用いられる。In the present invention, the apparent density of the graphite material before being impregnated with the resin capable of becoming glassy carbon is 1.70 to
1.87 g / cm 3 , preferably 1.75 to 1.87 g / c
m 3, more preferably in a range of 1.80~1.87g / cm 3, is sufficiently impregnated portion not with spend time because they must often impregnated number is less than 1.70 g / cm 3 Occurrence of foreign matter is increased. Also 1.8
When it exceeds 7 g / cm 3 , glassy carbon is not impregnated to the central portion of the graphite material because the pore diameter in the structure is small, and the generation of foreign substances increases during use. The graphite material is not particularly limited, and conventionally known materials can be used.
【０００９】また得られる製品（イオン注入装置用カー
ボン）は、ガラス状炭素の含有率が３．５〜７．０重量
％、見掛け密度が１．８５〜１．９５ｇ／cm3及び含有
平均気孔率が０．５〜８％の範囲とされ、ガラス状炭素
の含有率が７．０重量％を越えた場合、見掛け密度が
１．９５ｇ／cm3を越えた場合及び／又は含有平均気孔
率が０．５％未満であるといたずらに含浸回数を費やす
だけで手間がかかり、またガラス状炭素の含有率が３．
５重量％未満、見掛け密度が１．８５ｇ／cm3未満及び
／又は含有平均気孔率が８％を越えると含浸量が少な
く、気孔率が大であるため使用中に異物の発生が増大す
る。The obtained product (carbon for ion implantation equipment) has a glassy carbon content of 3.5 to 7.0% by weight, an apparent density of 1.85 to 1.95 g / cm 3 and an average content of pores. The content of glassy carbon is more than 7.0% by weight, the apparent density is more than 1.95 g / cm 3 , and / or the average porosity of content is within the range of 0.5 to 8%. Is less than 0.5%, it is troublesome to spend the number of impregnations, and the glassy carbon content is 3.
If it is less than 5% by weight, the apparent density is less than 1.85 g / cm 3 and / or the content average porosity exceeds 8%, the impregnation amount is small and the porosity is large, so that the generation of foreign substances during use increases.
【００１０】本発明におけるガラス状炭素の含有率とは
黒鉛材料に含浸されたガラス状炭素の量を重量％で示し
たものである。また含有平均気孔率とはＪＩＳ−Ｒ−７
２１２に準じる方法より求めた値である。さらに以下の
実施例に示される平均気孔径とは水銀ポロシメータによ
り１cm2中に含まれる気孔の平均径から求めた値であ
る。The glassy carbon content in the present invention means the amount of glassy carbon impregnated in the graphite material, expressed in wt%. The average content porosity is JIS-R-7.
It is a value obtained by a method according to 212. Furthermore, the average pore diameter shown in the following examples is a value obtained from the average diameter of the pores contained in 1 cm 2 by a mercury porosimeter.
【００１１】ガラス状炭素となり得る樹脂としては、フ
ェノール樹脂、フラン樹脂、エポキシ樹脂、不飽和ポリ
エステル樹脂、メラミン樹脂、アルキッド樹脂、キシレ
ン樹脂等の一種以上が用いられるが、本発明においては
フェノール樹脂を用いることが好ましい。As the resin capable of forming glassy carbon, one or more of phenol resin, furan resin, epoxy resin, unsaturated polyester resin, melamine resin, alkyd resin, xylene resin and the like are used. In the present invention, phenol resin is used. It is preferable to use.
【００１２】イオン注入装置用カーボンの製造工程にお
ける硬化、焼成炭化、黒鉛化処理、加工、熱処理等につ
いては特に制限はなく、従来公知の方法で行われる。ま
た含浸については減圧下で行えば黒鉛材料中の空気など
を十分に取り除くことができ含浸効果に優れるので好ま
しい。なお減圧下における真空度については特に制限は
ない。本発明においては必要に応じ予備加熱して水分な
どを除去してもよい。There are no particular restrictions on the curing, firing carbonization, graphitization treatment, processing, heat treatment, etc. in the manufacturing process of the carbon for the ion implantation apparatus, and any conventionally known method may be used. Further, the impregnation is preferably carried out under reduced pressure because air and the like in the graphite material can be sufficiently removed and the impregnation effect is excellent. The degree of vacuum under reduced pressure is not particularly limited. In the present invention, water etc. may be removed by preheating if necessary.
【００１３】[0013]
【実施例】以下発明の実施例を説明する。 実施例１ 見掛け密度が１．８１ｇ／cm3、電気比抵抗が１２μΩ
ｍ、曲げ強さが５３MPa、含有平均気孔率が１１％及び
平均気孔径が０．１μｍの特性を有する人造黒鉛材料
（日立化成工業製、商品名ＰＤ−６００）を所望の形状
に加工した後、デシケータに入れ真空度２０Torr以下の
減圧下でメタノールを用いて樹脂分を５５重量％に調整
したフェノール樹脂（日立化成工業製、商品名ＶＰ−１
１Ｎ）の含浸を１０分間行った。該含浸品を乾燥機に入
れ１６０℃まで昇温し、１２時間保持して硬化を行った
後、環状炉に入れ窒素気流中で１１００℃まで昇温し、
５時間保持して焼成炭化を行った。さらに、２８００℃
まで昇温し、６時間保持して黒鉛化処理を行った。含浸
から黒鉛化処理までの作業を３回繰り返し行った後、外
側の寸法が縦１１０×横８０mm、内側の寸法が縦５０×
横４５mm及び厚さ（高さ）４mmに加工し、次いで２５０
０℃の温度で熱処理して高純度精製を行い図１に示すよ
うなガラス状炭素含浸カーボン製のイオン注入装置用カ
ーボン１を得た。EXAMPLES Examples of the present invention will be described below. Example 1 Apparent density 1.81 g / cm 3 , electric resistivity 12 μΩ
m, a bending strength of 53 MPa, a content average porosity of 11%, and an average pore diameter of 0.1 μm, after processing an artificial graphite material (manufactured by Hitachi Chemical Co., Ltd., trade name PD-600) into a desired shape. Phenol resin (made by Hitachi Chemical Co., Ltd., trade name VP-1) whose resin content was adjusted to 55% by weight by using methanol under a reduced pressure of 20 Torr or less in a desiccator.
1N) was impregnated for 10 minutes. The impregnated product was placed in a drier and heated to 160 ° C., held for 12 hours to cure, then placed in a ring furnace and heated to 1100 ° C. in a nitrogen stream,
It was held for 5 hours to carry out calcination and carbonization. Furthermore, 2800 ° C
The temperature was raised up to and held for 6 hours for graphitization. After repeating the process from impregnation to graphitization three times, the outer dimensions are 110 x 80 mm, and the inner dimensions are 50 x.
Processed to a width of 45 mm and a thickness (height) of 4 mm, then 250
Heat treatment was performed at a temperature of 0 ° C. for high-purity purification to obtain carbon 1 for an ion implantation device made of glassy carbon-impregnated carbon as shown in FIG.
【００１４】実施例２ 実施例１の人造黒鉛材料に代えて見掛け密度が１．７５
ｇ／cm3、電気比抵抗が１３μΩｍ、曲げ強さが４０MP
a、含有平均気孔率が１５％及び平均気孔径が２．６μ
ｍの特性を有する人造黒鉛材料（日立化成工業製、商品
名ＰＤ−６２０）を用いた以外は、実施例１と同様のフ
ェノール樹脂を用い、実施例１と同様の工程を経てイオ
ン注入装置用カーボンを得た。Example 2 In place of the artificial graphite material of Example 1, the apparent density was 1.75.
g / cm 3 , electrical resistivity 13μΩm, bending strength 40MP
a, content average porosity is 15% and average pore diameter is 2.6μ
For an ion implanter, the same phenolic resin as in Example 1 was used, except that an artificial graphite material having a characteristic of m (Hitachi Chemical Co., Ltd., trade name PD-620) was used. Got carbon.
【００１５】実施例３ 実施例１で用いたフェノール樹脂にアセトンとメタノー
ルの混合溶媒（重量比でアセトン５０：メタノール５
０）を加えて樹脂分を３０重量％とした以外は実施例１
と同様の人造黒鉛材料を用い、実施例１と同様の工程を
経てイオン注入装置用カーボンを得た。Example 3 The phenol resin used in Example 1 was mixed with a mixed solvent of acetone and methanol (acetone 50: methanol 5 by weight ratio).
Example 1 except that 0) was added to make the resin content 30% by weight.
Using an artificial graphite material similar to that described above, the same steps as in Example 1 were performed to obtain carbon for an ion implantation device.
【００１６】実施例４ 実施例１で用いたフェノール樹脂を撹拌機を備えた容器
に入れ、この容器を３０℃に保持したウォーターバス中
に入れ撹拌しながら溶媒を蒸発させて樹脂分を６５重量
％とした以外は実施例１と同様の人造黒鉛材料を用い、
実施例１と同様の工程を経てイオン注入装置用カーボン
を得た。Example 4 The phenol resin used in Example 1 was placed in a container equipped with a stirrer, and the container was placed in a water bath kept at 30 ° C. to evaporate the solvent while stirring to evaporate the resin content to 65% by weight. Using the same artificial graphite material as in Example 1 except that the percentage was
Carbon for an ion implantation apparatus was obtained through the same steps as in Example 1.
【００１７】実施例５ 平均粒径が１０μｍのコークス粉１００重量部と結合材
ピッチ４５重量部とを混練した混練物を粉砕機で平均粒
径が２０μｍになるよう粉砕し、次いで１００ＭＰａの
圧力で成形した後、焼成炉に入れ１０００℃まで昇温
し、５時間保持して焼成し、さらに２８００℃まで昇温
し、６時間保持して黒鉛化を行い黒鉛材料を得た。得ら
れた黒鉛材料は見掛け密度が１．８７ｇ／cm3、電気比
抵抗が１１μΩｍ、曲げ強さが５２MPa、含有平均気孔
率が１０．６％及び平均気孔径が１．０μｍであった。Example 5 A kneaded material obtained by kneading 100 parts by weight of coke powder having an average particle size of 10 μm and 45 parts by weight of a binder pitch was pulverized by a pulverizer so that the average particle size was 20 μm, and then at a pressure of 100 MPa. After forming, the mixture was put into a firing furnace, heated to 1000 ° C., held for 5 hours to be fired, further heated to 2800 ° C., held for 6 hours to be graphitized to obtain a graphite material. The obtained graphite material had an apparent density of 1.87 g / cm 3 , an electric resistivity of 11 μΩm, a bending strength of 52 MPa, a contained average porosity of 10.6% and an average pore diameter of 1.0 μm.
【００１８】次に上記で得た黒鉛材料を所望の形状に加
工した後、デシケータに入れ、真空度２０Torr以下の減
圧下で実施例１と同様のフェノール樹脂を用いて含浸を
行った。以下実施例１と同様の工程を経てイオン注入装
置用カーボンを得た。Next, the graphite material obtained above was processed into a desired shape, put into a desiccator, and impregnated with the same phenol resin as in Example 1 under a reduced pressure of a vacuum degree of 20 Torr or less. Then, carbon for an ion implantation apparatus was obtained through the same steps as in Example 1.
【００１９】比較例１ 平均粒径が１０μｍのコークス粉１００重量部と結合材
ピッチ４５重量部とを混練した混練物を粉砕機で平均粒
径が２０μｍになるよう粉砕し、次いで７０MPaの圧力
で成形した後、焼成炉に入れ１０００℃まで昇温し、５
時間保持して焼成し、さらに２８００℃まで昇温し、６
時間保持して黒鉛化を行い黒鉛材料を得た。得られた黒
鉛材料は見掛け密度が１．６８ｇ／cm3、電気比抵抗が
２１μΩｍ、曲げ強さが３２MPa、含有平均気孔率が２
６％及び平均気孔径が３．１μｍであった。Comparative Example 1 100 parts by weight of coke powder having an average particle size of 10 μm and 45 parts by weight of a binder pitch were kneaded to obtain a compound having a mean particle size of 20 μm, which was then crushed with a pressure of 70 MPa. After molding, put in a firing furnace and raise the temperature to 1000 ° C.
Hold for a period of time to bake, further raise the temperature to 2800 ° C., and
Graphite was obtained by holding for a time to obtain a graphite material. The obtained graphite material has an apparent density of 1.68 g / cm 3 , an electric resistivity of 21 μΩm, a bending strength of 32 MPa, and an average porosity of 2 contained.
6% and the average pore diameter was 3.1 μm.
【００２０】次に上記で得た黒鉛材料を所望の形状に加
工した後、デシケータに入れ、真空度２０Torr以下の減
圧下で実施例１と同様のフェノール樹脂を用いて含浸を
行った。以下実施例１と同様の工程を経てイオン注入装
置用カーボンを得た。Next, the graphite material obtained above was processed into a desired shape, put into a desiccator, and impregnated with the same phenol resin as in Example 1 under reduced pressure at a vacuum degree of 20 Torr or less. Then, carbon for an ion implantation apparatus was obtained through the same steps as in Example 1.
【００２１】比較例２ 平均粒径が１０μｍのコークス粉１００重量部と結合材
ピッチ６０重量部とを混練した混練物を粉砕機で平均粒
径が２０μｍになるよう粉砕し、次いで１１０MPaの圧
力で成形した後、焼成炉に入れ１０００℃まで昇温し、
５時間保持して焼成し、さらに２８００℃まで昇温し、
６時間保持して黒鉛化を行い黒鉛材料を得た。得られた
黒鉛材料は見掛け密度が１．８９ｇ／cm3、電気比抵抗
が１０μΩｍ、曲げ強さが４７MPa、含有平均気孔率が
８％及び平均気孔径が１．１μｍであった。Comparative Example 2 A kneaded product obtained by kneading 100 parts by weight of coke powder having an average particle size of 10 μm and 60 parts by weight of a binder pitch was pulverized by a pulverizer to an average particle size of 20 μm, and then at a pressure of 110 MPa. After molding, put in a firing furnace and raise the temperature to 1000 ° C.
Hold for 5 hours to bake, then raise the temperature to 2800 ° C,
Graphite was obtained by holding for 6 hours to obtain a graphite material. The obtained graphite material had an apparent density of 1.89 g / cm 3 , an electric resistivity of 10 μΩm, a bending strength of 47 MPa, a contained average porosity of 8% and an average pore diameter of 1.1 μm.
【００２２】次に上記で得た黒鉛材料を所望の形状に加
工した後、デシケータに入れ、真空度２０Torr以下の減
圧下で実施例１と同様のフェノール樹脂を用いて含浸を
行った。以下実施例１と同様の工程を経てイオン注入装
置用カーボンを得た。Next, the graphite material obtained above was processed into a desired shape, placed in a desiccator, and impregnated with the same phenol resin as in Example 1 under reduced pressure at a vacuum degree of 20 Torr or less. Then, carbon for an ion implantation apparatus was obtained through the same steps as in Example 1.
【００２３】次いで各実施例及び各比較例で得たイオン
注入装置用カーボンを大電流イオン注入装置の走査部に
取付け、その中央部をイオンビームが通過するようにし
た。その後シリコンウエハーへのイオン注入を行い、Ｌ
ＳＩを製造してイオン注入装置用カーボンの性状を従来
品と共に比較した。その比較データを表１に示す。表１
において素材見掛け密度とはガラス状炭素となり得る樹
脂を含浸する前の黒鉛材料の見掛け密度のことである。Next, the carbon for ion implantation apparatus obtained in each of the examples and each comparative example was attached to the scanning portion of the high current ion implantation apparatus, and the ion beam was allowed to pass through the central portion thereof. After that, ion implantation into the silicon wafer is performed and L
SI was manufactured to compare the properties of carbon for ion implanters with conventional products. The comparison data is shown in Table 1. Table 1
In the above, the material apparent density is the apparent density of the graphite material before being impregnated with a resin that can become glassy carbon.
【００２４】[0024]
【表１】 [Table 1]
【００２５】表１に示されるように、本発明の実施例に
なるイオン注入装置用カーボンの性状は、比較例のイオ
ン注入装置用カーボン及び従来の黒鉛材料の性状に比較
してＬＳＩの歩留りが優れていることが示される。As shown in Table 1, the properties of the carbon for ion implanters according to the examples of the present invention are higher in the yield of LSI than the properties of the carbon for ion implanters of the comparative example and the properties of conventional graphite materials. It is shown to be excellent.
【００２６】[0026]
【発明の効果】本発明によればイオン注入を行う工程に
おいてシリコンウエハーに及ぼす悪影響が極めて少なく
安定して使用が可能なイオン注入装置用カーボンを得る
ことが可能となり、半導体デバイスの生産を効率よく行
うことが出来本発明は工業上極めて有益である。According to the present invention, it is possible to obtain carbon for an ion implantation apparatus, which has a minimal adverse effect on a silicon wafer in the step of performing ion implantation and can be stably used, and to efficiently produce semiconductor devices. It can be carried out, and the present invention is extremely useful industrially.
【図１】本発明の実施例になるイオン注入装置用カーボ
ンの斜視図である。FIG. 1 is a perspective view of carbon for an ion implantation apparatus according to an embodiment of the present invention.
１ イオン注入装置用カーボン 1 Carbon for ion implantation equipment
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/265 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical indication H01L 21/265
Claims (2)
3のガラス状炭素含浸用黒鉛材料を用い、ガラス状炭素
の含有率が３．５〜７．０重量％、見掛け密度が１．８
５〜１．９５ｇ／cm3及び含有平均気孔率が０．５〜８
％であるイオン注入装置用カーボン。1. An apparent density of 1.70 to 1.87 g / cm.
Using the graphite material for glassy carbon impregnation of 3, the glassy carbon content is 3.5 to 7.0% by weight and the apparent density is 1.8.
5 to 1.95 g / cm 3 and contained average porosity of 0.5 to 8
% Carbon for ion implanters.
り得る樹脂を含浸した後、硬化、焼成炭化、黒鉛化処理
し、所望の形状に加工した後熱処理して高純度精製を行
うことを特徴とするイオン注入装置用カーボンの製造
法。2. The high purity purification is performed by impregnating the graphite material according to claim 1 with a resin capable of becoming glassy carbon, followed by curing, firing carbonization, graphitization, processing into a desired shape and heat treatment. A characteristic method for producing carbon for ion implantation equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6095365A JPH07302568A (en) | 1994-05-10 | 1994-05-10 | Carbon for ion implantation device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6095365A JPH07302568A (en) | 1994-05-10 | 1994-05-10 | Carbon for ion implantation device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07302568A true JPH07302568A (en) | 1995-11-14 |
Family
ID=14135607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6095365A Pending JPH07302568A (en) | 1994-05-10 | 1994-05-10 | Carbon for ion implantation device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07302568A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005055271A1 (en) * | 2003-12-04 | 2005-06-16 | Nissin Ion Equipment Co., Ltd. | Ion beam device |
| US8673450B2 (en) | 2005-10-28 | 2014-03-18 | Toyo Tanso Co., Ltd. | Graphite member for beam-line internal member of ion implantation apparatus |
-
1994
- 1994-05-10 JP JP6095365A patent/JPH07302568A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005055271A1 (en) * | 2003-12-04 | 2005-06-16 | Nissin Ion Equipment Co., Ltd. | Ion beam device |
| US7435976B2 (en) | 2003-12-04 | 2008-10-14 | Nissin Ion Equipment Co., Ltd. | Ion beam device |
| US8673450B2 (en) | 2005-10-28 | 2014-03-18 | Toyo Tanso Co., Ltd. | Graphite member for beam-line internal member of ion implantation apparatus |
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