JPH07301705A - Al alloy thin film and sputtering target for formation of al alloy thin film - Google Patents
Al alloy thin film and sputtering target for formation of al alloy thin filmInfo
- Publication number
- JPH07301705A JPH07301705A JP6096597A JP9659794A JPH07301705A JP H07301705 A JPH07301705 A JP H07301705A JP 6096597 A JP6096597 A JP 6096597A JP 9659794 A JP9659794 A JP 9659794A JP H07301705 A JPH07301705 A JP H07301705A
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- Japan
- Prior art keywords
- thin film
- alloy thin
- group
- alloy
- sputtering target
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optical Elements Other Than Lenses (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Al合金薄膜およびAl合
金薄膜形成用スパッタリングターゲットに関し、特にレ
ーザー光反射膜として使用するのに好適なAl合金薄膜お
よびその作製のために使用するAl合金薄膜形成用スパッ
タリングターゲットに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an Al alloy thin film and a sputtering target for forming an Al alloy thin film, and particularly to an Al alloy thin film suitable for use as a laser light reflecting film and an Al alloy thin film used for its production. The present invention relates to a sputtering target for forming.
【０００２】[0002]
【従来の技術】平面鏡、凹面鏡、凸面鏡等の形状を有す
るレーザー光反射鏡に使用する材料としては、使用環境
下において腐食されないように耐食性に優れているとと
もに、レーザー光の強度が減衰しないように高反射率特
性が要求される。2. Description of the Related Art As a material used for a laser light reflecting mirror having a shape such as a plane mirror, a concave mirror, a convex mirror, etc., it is excellent in corrosion resistance so as not to be corroded under the use environment, and to prevent the intensity of laser light from being attenuated. High reflectance characteristics are required.
【０００３】従来、レーザー光反射鏡には、鏡面加工さ
れたCu、Mo、SiおよびAlが使用されている。これらの中
でもCuは加工性に優れ、高反射率を有するところから最
も広く利用されている。また、優れた耐食性および高反
射率を有し、なお、かつ耐酸化性に優れ、硬質の合金薄
膜をCu表面に蒸着等により形成したものも使用されてい
る。Conventionally, mirror-finished Cu, Mo, Si and Al have been used for laser light reflecting mirrors. Among these, Cu is most widely used because it has excellent workability and high reflectance. Further, a hard alloy thin film having excellent corrosion resistance and high reflectance and also excellent in oxidation resistance is formed on the Cu surface by vapor deposition or the like.
【０００４】代表的な合金薄膜として、高反射率を有
し、耐食性および耐酸化性に優れたAuをベースに、Auの
硬度を増加させるため 0.1〜0.5wt ％のCoを含有させた
Au−Co合金薄膜を形成したもの（特開昭63-301902 号公
報）や 1〜20wt％のCrを含むAu−Cr合金薄膜を形成した
もの（特開平1-309005号公報）等があり、主としてAuベ
ースの合金薄膜が使用されている。As a typical alloy thin film, Au having a high reflectance and excellent corrosion resistance and oxidation resistance was used as a base, and 0.1 to 0.5 wt% of Co was added to increase the hardness of Au.
There are those formed with an Au-Co alloy thin film (JP-A-63-301902) and those formed with an Au-Cr alloy thin film containing 1 to 20 wt% Cr (JP-A-1-309005). Primarily Au-based alloy thin films are used.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、Cuは酸
化されやすく、柔らかくて表面に傷がつきやすいという
問題点があり、また、Auは価格的に高価であるという問
題点を抱えている。そこで、価格的に安価で、なお、か
つ高反射率を有するAlがレーザー光反射膜として今後有
望な材料である。However, Cu has a problem that it is easily oxidized and soft, and its surface is easily scratched, and Au has a problem that it is expensive in price. Therefore, Al, which is inexpensive and has a high reflectance, is a promising material for the laser light reflecting film.
【０００６】ところがAlは耐食性に劣るため、高温ある
いは高湿度の環境下で長期間使用すると、Al薄膜が腐食
して反射率の低下を引き起こし、レーザー光反射膜とし
て機能しなくなるという難点がある。However, since Al is inferior in corrosion resistance, when it is used in a high temperature or high humidity environment for a long period of time, the Al thin film corrodes to cause a decrease in reflectance, which causes a problem that it does not function as a laser light reflecting film.
【０００７】本発明は前記した事情に着目して、従来製
品の問題点を解消した高機能の新規Al合金薄膜およびそ
のAl合金薄膜形成用スパッタリングターゲット、すなわ
ち、安価で、優れた耐食性および高反射率を有し、レー
ザー光反射膜として好適に使用し得るAl合金薄膜および
そのAl合金薄膜形成用スパッタリングターゲットを提供
することを目的としている。In view of the above-mentioned circumstances, the present invention focuses on the above-mentioned problems, a novel high-functional Al alloy thin film that solves the problems of conventional products and a sputtering target for forming the Al alloy thin film, that is, inexpensive, excellent corrosion resistance and high reflection. An object of the present invention is to provide an Al alloy thin film that has a high index and can be suitably used as a laser light reflecting film, and a sputtering target for forming the Al alloy thin film.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明者らは、鋭意研究を重ねた結果、レーザー光
反射鏡としてのAl合金薄膜を形成するための素材である
スパッタリングターゲットとして、遷移元素を含むAl合
金が優れた機能を発揮し、得られたAl合金薄膜よりなる
レーザー光反射鏡の特性を向上させるという知見を得
て、本発明を完成するに至ったものである。[Means for Solving the Problems] In order to achieve the above object, the inventors of the present invention have conducted extensive studies, and as a result, as a sputtering target which is a material for forming an Al alloy thin film as a laser light reflecting mirror, The present invention has been completed based on the finding that an Al alloy containing a transition element exerts an excellent function and improves the characteristics of a laser light reflecting mirror made of the obtained Al alloy thin film.
【０００９】すなわち、上記知見に基づいた本発明は、
合金成分として周期率表IIIa族（Sc、Y 、La、Pr、Nd、
Sm、Gd、Tb、Dy）、IVa 族（Ti、Zr、Hf）、Va族（V 、
Nb、Ta）、VIa 族（Cr、Mo、W ）、VIIa族（Mn、Tc、R
e）、VIII族（Fe、Co、Ni、Ru、Rh、Pd、Os、Ir、Pt）
の遷移元素のうちの１種以上を、合計で 0.1〜10at％含
有するAl合金よりなることを特徴とするAl合金薄膜を要
旨としており、またこの薄膜を形成する合金で構成され
たスパッタリングターゲットを要旨とするものである。
さらに前記合金により構成されたレーザー光反射膜も本
発明の要旨である。That is, the present invention based on the above findings is
Periodic table IIIa group (Sc, Y, La, Pr, Nd,
Sm, Gd, Tb, Dy), IVa group (Ti, Zr, Hf), Va group (V,
Nb, Ta), VIa group (Cr, Mo, W), VIIa group (Mn, Tc, R)
e), Group VIII (Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt)
Al alloy thin film characterized by being composed of an Al alloy containing 0.1 to 10 at% in total of one or more of the above transition elements, and a sputtering target composed of the alloy forming this thin film is provided. It is a summary.
Further, a laser light reflecting film made of the above alloy is also the subject matter of the present invention.
【００１０】[0010]
【作用】本発明の構成と作用を説明する。本発明者ら
は、Alに種々の元素を含有させて得られたAl合金スパッ
タリングターゲットを作製し、これらのターゲットを使
用してスパッタリング法により種々の合金組成のAl合金
薄膜を形成し、その組成、耐食性および反射率等の特性
評価を行なった。The structure and operation of the present invention will be described. The present inventors produced Al alloy sputtering targets obtained by containing various elements in Al, and using these targets to form Al alloy thin films of various alloy compositions by the sputtering method, and the composition thereof. The characteristics such as corrosion resistance and reflectance were evaluated.
【００１１】その結果、遷移元素の添加が耐食性の向上
に有効であり、また、反射率を著しく低下させるもので
ないことがわかり、これら遷移元素を添加含有させたAl
合金薄膜がレーザー光反射膜として優れた特性を有する
ことが確認された。As a result, it was found that the addition of the transition element is effective in improving the corrosion resistance and does not significantly reduce the reflectance, and Al containing the transition element added is contained.
It was confirmed that the alloy thin film had excellent properties as a laser light reflecting film.
【００１２】Alに、合金成分として周期率表IIIa族（S
c、Y 、La、Pr、Nd、Sm、Gd、Tb、Dy）、IVa 族（Ti、Z
r、Hf）、Va族（V 、Nb、Ta）、VIa 族（Cr、Mo、W
）、VIIa族（Mn、Tc、Re）、VIII族（Fe、Co、Ni、R
u、Rh、Pd、Os、Ir、Pt）の遷移元素のうちの１種以上
を含有させると、その含有量の増加にともなって耐食性
が向上する。In Al, as an alloy component, the periodic table IIIa (S
c, Y, La, Pr, Nd, Sm, Gd, Tb, Dy), IVa group (Ti, Z
r, Hf), Va group (V, Nb, Ta), VIa group (Cr, Mo, W)
), VIIa group (Mn, Tc, Re), VIII group (Fe, Co, Ni, R)
If one or more of the transition elements (u, Rh, Pd, Os, Ir, Pt) are contained, the corrosion resistance is improved with the increase of the content.
【００１３】これは次の理由によるものである。すなわ
ち、平衡状態において、遷移元素はAlに対する固溶限は
極めて小さいが、スパッタリング法で形成されるAl合金
薄膜では、スパッタリング法固有の気相急冷によって固
溶限以上の強制的な固溶が可能となる。これらの遷移元
素は化学的に安定な不働態を形成することから耐食性が
向上するのである。This is due to the following reasons. That is, in the equilibrium state, the transition element has a very small solid solution limit for Al, but in the Al alloy thin film formed by the sputtering method, it is possible to force the solid solution beyond the solid solution limit by the vapor phase quenching unique to the sputtering method. Becomes These transition elements form a chemically stable passive state, which improves the corrosion resistance.
【００１４】かかる効果は周期率表IIIa族（Sc、Y 、L
a、Pr、Nd、Sm、Gd、Tb、Dy）、IVa族（Ti、Zr、Hf）、
Va族（V 、Nb、Ta）、VIa 族（Cr、Mo、W ）、VIIa族
（Mn、Tc、Re）、VIII族（Fe、Co、Ni、Ru、Rh、Pd、O
s、Ir、Pt）の遷移元素のいずれにおいても得られ、こ
れら遷移元素から選択される１種以上の元素を同時に含
有させた場合でも同様の効果が得られることが判明し
た。Such an effect is obtained by the periodic table IIIa group (Sc, Y, L
a, Pr, Nd, Sm, Gd, Tb, Dy), IVa group (Ti, Zr, Hf),
Va group (V, Nb, Ta), VIa group (Cr, Mo, W), VIIa group (Mn, Tc, Re), VIII group (Fe, Co, Ni, Ru, Rh, Pd, O)
It has been found that the same effect can be obtained even when one or more kinds of elements selected from these transition elements are contained at the same time.
【００１５】遷移元素添加による耐食性の向上に反し
て、その含有量増加に伴い、Al合金反射膜の反射率は低
下する。しかし、遷移元素含有量が 0.1〜10at％の範囲
内における反射率低下の程度は、実用上問題とならない
ほど小さいことも確認された。Contrary to the improvement in corrosion resistance due to the addition of the transition element, the reflectivity of the Al alloy reflective film decreases as the content increases. However, it was also confirmed that the degree of decrease in reflectance within the range of the transition element content of 0.1 to 10 at% was so small as to cause no practical problem.
【００１６】前記遷移元素の含有量は合計で 0.1〜10at
％にする必要がある。その理由は、含有量の増加に伴っ
て耐食性は向上するが、 0.1at％未満では合金における
遷移元素の固溶量が少なすぎて耐食性向上効果が十分で
なく、また、10at％を超えた含有量では耐食性は十分に
向上するものの、固溶量が多すぎて反射率が大きく低下
し、反射膜としての機能を十分果たすことができなくな
るからである。The total content of the transition elements is 0.1-10 at
Must be%. The reason is that the corrosion resistance improves as the content increases, but if it is less than 0.1 at%, the solid solution amount of the transition element in the alloy is too small and the corrosion resistance improving effect is insufficient, and if the content exceeds 10 at%. This is because although the corrosion resistance is sufficiently improved by the amount, the amount of solid solution is too large and the reflectance is greatly reduced, so that the function as a reflective film cannot be sufficiently fulfilled.
【００１７】本発明に係るAl合金薄膜は、スパッタリン
グ法により形成されることが望ましい。その理由は、真
空蒸着法、化学気相蒸着法等の薄膜形成法と比較して、
スパッタリング法は合金薄膜組成の安定性に優れ、ま
た、遷移元素は平衡状態ではAlに対する固溶限が極めて
小さいが、スパッタリング法で形成されたAl合金薄膜で
は、スパッタリング法固有の気相急冷によって固溶限以
上の強制的な固溶が可能となることから、他の薄膜形成
法により形成されたAl合金薄膜と比較して、より耐食性
の高いものが得られるからである。The Al alloy thin film according to the present invention is preferably formed by a sputtering method. The reason is that compared with thin film forming methods such as vacuum vapor deposition and chemical vapor deposition,
The sputtering method has excellent stability of the alloy thin film composition, and the transition element has a very small solid solubility limit for Al in the equilibrium state.However, in the Al alloy thin film formed by the sputtering method, it is solidified by the vapor phase quenching unique to the sputtering method. This is because it is possible to form a solid solution above the melting limit, so that a film having higher corrosion resistance can be obtained as compared with an Al alloy thin film formed by another thin film forming method.
【００１８】本発明に係るAl合金薄膜をスパッタリング
法により形成するときは、スパッタリングターゲットと
して周期率表IIIa族（Sc、Y 、La、Pr、Nd、Sm、Gd、T
b、Dy）、IVa 族（Ti、Zr、Hf）、Va族（V 、Nb、T
a）、VIa 族（Cr、Mo、W ）、VIIa族（Mn、Tc、Re）、V
III族（Fe、Co、Ni、Ru、Rh、Pd、Os、Ir、Pt）の遷移
元素のうちの１種以上を、合計で 0.1〜10at％含有する
Al合金よりなるものを使用すればよい。その理由は、か
かるAl合金ターゲットは、複合スパッタリングターゲッ
ト等に比し形成されるAl合金薄膜の組成が安定しやすい
等の利点を有しているからである。When the Al alloy thin film according to the present invention is formed by a sputtering method, a periodic table IIIa (Sc, Y, La, Pr, Nd, Sm, Gd, T) is used as a sputtering target.
b, Dy), IVa group (Ti, Zr, Hf), Va group (V, Nb, T)
a), VIa group (Cr, Mo, W), VIIa group (Mn, Tc, Re), V
Contain 0.1-10 at% in total of one or more kinds of transition elements of Group III (Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt)
A material made of Al alloy may be used. The reason is that such an Al alloy target has an advantage that the composition of the Al alloy thin film formed is easier to stabilize than the composite sputtering target and the like.
【００１９】[0019]
【実施例】本発明の実施例を説明するが、これによって
本発明は何ら限定されるものではない。 実施例１ Sc、Y 、La、Pr、Nd、Sm、Gd、Tb、Dy、Ti、Zr、Hf、V
、Nb、Ta、Cr、Mo、W、Mn、Tc、Re、Fe、Co、Ni、Ru、
Rh、Pd、Os、Ir、Ptをそれぞれ所定量含有するAl合金ス
パッタリングターゲットを用いて、ＤＣマグネトロンス
パッタリング法により、10mm×20mmのガラス基板上に厚
さ 1μm のAl合金薄膜を形成した。EXAMPLES Examples of the present invention will be described, but the present invention is not limited thereto. Example 1 Sc, Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ti, Zr, Hf, V
, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Ru,
An Al alloy thin film having a thickness of 1 μm was formed on a glass substrate of 10 mm × 20 mm by a DC magnetron sputtering method using an Al alloy sputtering target containing predetermined amounts of Rh, Pd, Os, Ir and Pt.
【００２０】前記のようにして形成したAl合金薄膜にリ
ード線を取り付け、フロンマスクにより一定面積を露出
させた電極試料を作成し、この電極を 5mass％NaOH水溶
液中に 5秒間浸漬させて酸化皮膜を除去した後、電位掃
引速度20mV/minのアノード分極測定を行なった。電解液
は 0.5mass％Na2SO4水溶液を支持電解質とし、H2SO4、H
Cl またはNaOH添加により所定のpHに調整した。電解液
は予めArガスにより 1時間以上脱気し、参照電極には飽
和カロメル電極（ＳＣＥ）を使用した。An electrode sample was prepared by attaching a lead wire to the Al alloy thin film formed as described above and exposing a certain area with a fluorocarbon mask. The electrode was immersed in a 5 mass% NaOH aqueous solution for 5 seconds to form an oxide film. After removing, the anodic polarization was measured at a potential sweep rate of 20 mV / min. The electrolyte is H 2 SO 4 , H 2 with 0.5 mass% Na 2 SO 4 aqueous solution as the supporting electrolyte.
The pH was adjusted to the prescribed level by adding Cl or NaOH. The electrolyte was previously degassed with Ar gas for 1 hour or more, and a saturated calomel electrode (SCE) was used as a reference electrode.
【００２１】前記Al合金薄膜は、いずれもアノード分極
により不働態化することから、不働態域での電流密度
（以下、不働態保持電流密度という）から腐食速度を評
価した。検討した遷移元素とその元素を 2at％含むAl合
金薄膜の不働態保持電流密度との関係を表１に示す。Since each of the Al alloy thin films is passivated by anodic polarization, the corrosion rate was evaluated from the current density in the passivity region (hereinafter referred to as passivation holding current density). Table 1 shows the relationship between the studied transition elements and the passive state holding current density of Al alloy thin films containing 2 at% of the transition elements.
【００２２】[0022]
【表１】 [Table 1]
【００２３】酸性溶液（pH=3.2）および中性溶液（pH=
8.0）のいずれの場合も、遷移元素を含有させたAl合金
薄膜の不働態保持電流密度は、純Al薄膜と比較して低く
なっており、純Al薄膜よりも耐食性に優れていることが
わかる。Acidic solution (pH = 3.2) and neutral solution (pH = 3.2)
In each case of 8.0), the passive state holding current density of the Al alloy thin film containing the transition element is lower than that of the pure Al thin film, and it can be seen that it has better corrosion resistance than the pure Al thin film. .
【００２４】実施例２ 実施例１の場合と同様のスパッタリングターゲットを用
いて、同様のスパッタリング法により、厚さ1.27mmの透
明ポリカーボネート樹脂基板上に、厚さ50nmのAl合金薄
膜を形成したのち、この薄膜上にアクリル樹脂よりなる
厚さ10μm の保護膜をスピンコートにより塗布し、硬化
させて試料を得た。Example 2 The same sputtering target as in Example 1 was used to form an Al alloy thin film having a thickness of 50 nm on a transparent polycarbonate resin substrate having a thickness of 1.27 mm by the same sputtering method. A 10 μm-thick protective film made of acrylic resin was applied onto this thin film by spin coating and cured to obtain a sample.
【００２５】この試料について、波長 780nmのレーザー
光による反射率を、透明ポリカーボネート樹脂基板側か
ら測定した。検討した遷移元素の元素含有量と反射率と
の関係を図１、図２および図３に示す。The reflectance of this sample with a laser beam having a wavelength of 780 nm was measured from the transparent polycarbonate resin substrate side. The relationship between the element content of the transition element studied and the reflectance is shown in FIGS. 1, 2 and 3.
【００２６】図１、２、３に示すように、遷移元素をAl
合金薄膜に含有させることにより、反射率（初期反射
率）は低下していく傾向にあるが、含有量が 0.1〜10at
％の範囲においては、いずれの合金薄膜も60％以上の高
い反射率を示すことがわかる。As shown in FIGS. 1, 2, and 3, the transition element is Al
The reflectivity (initial reflectivity) tends to decrease by including it in the alloy thin film, but the content is 0.1-10 at
It can be seen that in the range of%, all the alloy thin films show a high reflectance of 60% or more.
【００２７】実施例３ 実施例２の場合と同様の試料について、環境加速試験と
してＰＣＴ（PressureCooker Test；温度 105℃、圧力1
22kPa、湿度 100％RH）を行い、試験前後の反射率の変
化量（低下量）から、膜の耐食性を評価した。検討した
遷移元素の元素含有量とＰＣＴ60時間後における反射率
低下量との関係を図４、図５および図６に示す。Example 3 A PCT (Pressure Cooker Test; temperature: 105 ° C., pressure: 1) was used as an environmental acceleration test for the same sample as in Example 2.
(22 kPa, 100% RH) was performed, and the corrosion resistance of the film was evaluated from the change amount (reduction amount) of reflectance before and after the test. The relationship between the examined elemental content of the transition element and the reflectance decrease amount after 60 hours of PCT is shown in FIGS. 4, 5 and 6.
【００２８】図４、５、６に示すように、遷移元素をAl
合金薄膜に含有させることにより、反射率低下量が著し
く少なくなり、これらAl合金薄膜が耐食性に優れたもの
であることが分かる。As shown in FIGS. 4, 5 and 6, the transition element is Al.
It can be seen that the inclusion in the alloy thin film significantly reduces the amount of decrease in reflectance, and these Al alloy thin films have excellent corrosion resistance.
【００２９】[0029]
【発明の効果】本発明は以上説明したように構成されて
いるから、耐食性に優れ、高い反射率を有するため、レ
ーザー光反射膜として好適に用いることができ、また、
スパッタリングターゲットは前記レーザー光反射膜用薄
膜形成に好適であって、これらを使用する機器の高機能
化および品質向上を図ることができ、産業上極めて有用
である。EFFECTS OF THE INVENTION Since the present invention is constituted as described above, it has excellent corrosion resistance and high reflectance, and therefore can be suitably used as a laser light reflecting film.
The sputtering target is suitable for forming the thin film for the laser light reflecting film, and can enhance the function and the quality of the equipment using them, and is extremely useful industrially.
【図１】本発明のAl合金薄膜における元素（Sc、Y 、L
a、Pr、Nd、Sm、Gd、Tb、Dy）の含有量と反射率との関
係を示す説明図である。FIG. 1 is an element (Sc, Y, L) in the Al alloy thin film of the present invention.
It is explanatory drawing which shows the relationship between the content of (a, Pr, Nd, Sm, Gd, Tb, Dy) and reflectance.
【図２】本発明のAl合金薄膜における元素（Ti、Zr、H
f、V 、Nb、Ta、Cr、Mo、W 、Mn、Tc、Re）の含有量と
反射率との関係を示す説明図である。FIG. 2 Elements in the Al alloy thin film of the present invention (Ti, Zr, H
FIG. 3 is an explanatory diagram showing the relationship between the content of f, V 2, Nb, Ta, Cr, Mo, W, Mn, Tc, Re) and the reflectance.
【図３】本発明のAl合金薄膜における元素（Fe、Co、N
i、Ru、Rh、Pd、Os、Ir、Pt）の含有量と反射率との関
係を示す説明図である。FIG. 3 shows elements (Fe, Co, N) in the Al alloy thin film of the present invention.
FIG. 3 is an explanatory diagram showing the relationship between the content of (i, Ru, Rh, Pd, Os, Ir, Pt) and the reflectance.
【図４】本発明のAl合金薄膜における元素（Sc、Y 、L
a、Pr、Nd、Sm、Gd、Tb、Dy）の含有量と反射率低下量
との関係を示す説明図である。FIG. 4 shows elements (Sc, Y, L) in the Al alloy thin film of the present invention.
It is explanatory drawing which shows the relationship between the content of (a, Pr, Nd, Sm, Gd, Tb, Dy) and the reflectance reduction amount.
【図５】本発明のAl合金薄膜における元素（Ti、Zr、H
f、V 、Nb、Ta、Cr、Mo、W 、Mn、Tc、Re）の含有量と
反射率低下量との関係を示す説明図である。FIG. 5: Elements (Ti, Zr, H in the Al alloy thin film of the present invention
FIG. 4 is an explanatory diagram showing the relationship between the content of f, V 2, Nb, Ta, Cr, Mo, W, Mn, Tc, Re) and the reflectance decrease amount.
【図６】本発明のAl合金薄膜における元素（Fe、Co、N
i、Ru、Rh、Pd、Os、Ir、Pt）の含有量と反射率との関
係を示す説明図である。FIG. 6 Elements (Fe, Co, N) in the Al alloy thin film of the present invention
FIG. 3 is an explanatory diagram showing the relationship between the content of (i, Ru, Rh, Pd, Os, Ir, Pt) and the reflectance.
フロントページの続き (72)発明者 山本 正剛 兵庫県神戸市西区高塚台１丁目５番５号 株式会社神戸製鋼所神戸総合技術研究所内 (72)発明者 吉川 一男 兵庫県神戸市西区高塚台１丁目５番５号 株式会社神戸製鋼所神戸総合技術研究所内Front page continuation (72) Inventor Masago Yamamoto 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Inside Kobe Research Institute of Kobe Steel, Ltd. (72) Kazuo Yoshikawa 1-chome, Takatsuka-dai, Nishi-ku, Kobe-shi, Hyogo No. 5-5 Inside Kobe Research Institute, Kobe Steel, Ltd.
Claims (4)
、La、Pr、Nd、Sm、Gd、Tb、Dy）、IVa 族（Ti、Zr、H
f）、Va族（V 、Nb、Ta）、VIa 族（Cr、Mo、W ）、VII
a族（Mn、Tc、Re）、VIII族（Fe、Co、Ni、Ru、Rh、P
d、Os、Ir、Pt）の遷移元素のうちの１種以上を、合計
で 0.1〜10at％含有するAl合金よりなることを特徴とす
るAl合金薄膜。1. A periodic table IIIa group (Sc, Y) as an alloy component.
, La, Pr, Nd, Sm, Gd, Tb, Dy), IVa group (Ti, Zr, H
f), Va group (V, Nb, Ta), VIa group (Cr, Mo, W), VII
Group a (Mn, Tc, Re), Group VIII (Fe, Co, Ni, Ru, Rh, P
An Al alloy thin film comprising an Al alloy containing 0.1 to 10 at% in total of one or more kinds of transition elements (d, Os, Ir, Pt).
項１記載のAl合金薄膜。2. The Al alloy thin film according to claim 1, which is formed by a sputtering method.
１または２記載のAl合金薄膜。3. The Al alloy thin film according to claim 1, which is used as a laser light reflecting film.
、La、Pr、Nd、Sm、Gd、Tb、Dy）、IVa 族（Ti、Zr、H
f）、Va族（V 、Nb、Ta）、VIa 族（Cr、Mo、W ）、VII
a族（Mn、Tc、Re）、VIII族（Fe、Co、Ni、Ru、Rh、P
d、Os、Ir、Pt）の遷移元素のうちの１種以上を、合計
で 0.1〜10at％含有するAl合金よりなる請求項１、２ま
たは３記載のAl合金薄膜形成用スパッタリングターゲッ
ト。4. Group IIIa (Sc, Y) of the periodic table as an alloy component.
, La, Pr, Nd, Sm, Gd, Tb, Dy), IVa group (Ti, Zr, H
f), Va group (V, Nb, Ta), VIa group (Cr, Mo, W), VII
Group a (Mn, Tc, Re), Group VIII (Fe, Co, Ni, Ru, Rh, P
The sputtering target for forming an Al alloy thin film according to claim 1, 2 or 3, which is made of an Al alloy containing 0.1 to 10 at% in total of one or more of transition elements (d, Os, Ir, Pt).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6096597A JPH07301705A (en) | 1994-05-10 | 1994-05-10 | Al alloy thin film and sputtering target for formation of al alloy thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6096597A JPH07301705A (en) | 1994-05-10 | 1994-05-10 | Al alloy thin film and sputtering target for formation of al alloy thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07301705A true JPH07301705A (en) | 1995-11-14 |
Family
ID=14169301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6096597A Withdrawn JPH07301705A (en) | 1994-05-10 | 1994-05-10 | Al alloy thin film and sputtering target for formation of al alloy thin film |
Country Status (1)
| Country | Link |
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