JPH07296756A - Fine working method, and device therefor - Google Patents
Fine working method, and device thereforInfo
- Publication number
- JPH07296756A JPH07296756A JP6084361A JP8436194A JPH07296756A JP H07296756 A JPH07296756 A JP H07296756A JP 6084361 A JP6084361 A JP 6084361A JP 8436194 A JP8436194 A JP 8436194A JP H07296756 A JPH07296756 A JP H07296756A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- sample
- mass
- ion beam
- focused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 34
- 238000000926 separation method Methods 0.000 claims abstract description 20
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000007730 finishing process Methods 0.000 claims description 3
- -1 germanium ion Chemical class 0.000 claims 4
- 238000009826 distribution Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- 238000003754 machining Methods 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 150000001793 charged compounds Polymers 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハやデバイ
ス等の試料に集束イオンビームを照射して行う微細加工
方法およびその装置に係り、特に、集束イオンビーム照
射の際、被加工物およびその製造装置に電気的汚染をも
たらさず、かつ、精度のよい加工を短時間に実現させる
微細加工方法およびそれを実現する微細加工装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microfabrication method and apparatus for irradiating a sample such as a semiconductor wafer or device with a focused ion beam, and more particularly to an object to be processed during focused ion beam irradiation. The present invention relates to a microfabrication method that does not cause electrical pollution to a manufacturing apparatus and that achieves accurate machining in a short time, and a microfabrication apparatus that implements the method.
【０００２】[0002]
【従来の技術】電気流体力学的イオン源(Electro−Hydr
odynamics Ion Source、以下、ＥＨＤイオン源と略記）
は点状領域からイオン放出するため高輝度であり、これ
を用いて直径１００ｎｍ以下の細束で１Ａ／cm2 以上の
高電流密度の集束イオンビーム（Focused Ion Beam：以
下ＦＩＢ）を形成することができる。このＦＩＢの集束
性の良さを利用して、半導体プロセスにおけるリソグラ
フィやイオン注入，エッチング，デポジションなどをレ
ジストなしで局所的に行える。また、ＦＩＢ照射による
局所スパッタリングを利用して、試料の特定場所の断面
を切り出してその断面を観察する断面加工や、透過型電
子顕微鏡観察用の薄片試料作成加工，多層配線構造のデ
バイスにおける下層配線と上層配線の結線加工なども行
える。ここでは、これらのＦＩＢによる加工を微細加工
と呼ぶ。2. Description of the Related Art Electrohydrodynamic ion source (Electro-Hydr
odynamics Ion Source (hereinafter abbreviated as EHD ion source)
Has high brightness because it emits ions from a point-like region, and it is necessary to form a focused ion beam (FIB) with a high current density of 1 A / cm 2 or more in a fine bundle with a diameter of 100 nm or less. You can By utilizing the good focusing property of this FIB, lithography, ion implantation, etching, deposition, etc. in a semiconductor process can be locally performed without a resist. Further, by using local sputtering by FIB irradiation, a cross-section processing for cutting out a cross-section of a specific location of a sample and observing the cross-section, thin-piece sample preparation processing for transmission electron microscope observation, and lower-layer wiring in a device having a multilayer wiring structure It is also possible to perform wiring processing for upper wiring. Here, processing by these FIBs is called fine processing.
【０００３】ＦＩＢによる微細加工の仕上がりの正確さ
は、ビームの位置精度と集束性，被加工物への再付着物
の除去方法，装置自身の振動によるビームの位置ずれの
無さなどによる。例えば、加工される部分の形状と加工
後の形状に応じてイオンビームの走査の方法，繰返し回
数，走査速度，イオンビーム電流，加速電圧などのパラ
メータを変化させるＦＩＢ走査方法として、例えば、特
開昭60−136315号公報『マイクロイオンビーム加工方法
およびその装置』（従来例１）に開示されている。The accuracy of the fine processing by FIB depends on the positional accuracy and focusing of the beam, the method of removing the re-deposited matter from the workpiece, and the absence of beam displacement due to the vibration of the apparatus itself. For example, as an FIB scanning method that changes parameters such as an ion beam scanning method, the number of repetitions, a scanning speed, an ion beam current, and an acceleration voltage according to the shape of a portion to be processed and the shape after processing, for example, Japanese Patent Application Laid-Open No. It is disclosed in JP-A-60-136315, "Micro Ion Beam Processing Method and Apparatus Therefor" (conventional example 1).
【０００４】ＥＨＤイオン源は、イオン材料が金属元素
の場合、特に液体金属イオン源（Liquid Metal Ion Sou
rce、略してＬＭＩＳ)とも呼ばれる。ＬＭＩＳの概略構
成について記載された公知例として、論文集「ジャーナ
ル・オブ・ヴァキューム・サイエンス・アンド・テクノ
ロジ」第Ａ２巻、（１９８４年）第１３６５頁から第１
３６９頁（Journal of Vacuum Science and Technolog
y, A2 (1984) 1365−1369），（従来例２）の論文があ
る。ＥＨＤイオン源からは多くの金属や半導体元素がイ
オン化できるが、実用面からは殆どの場合、ガリウム
（Ｇａ）イオンが用いられる。Ｇａの融点および蒸気圧
が低いのでイオン材料として取扱い易いためと、放出イ
オン電流が安定で、実用に耐えるだけの長寿命を有して
いるためである。The EHD ion source is a liquid metal ion source (Liquid Metal Ion Source) especially when the ionic material is a metal element.
Also called rce, or LMIS for short. As a publicly known example that describes the schematic configuration of the LMIS, a collection of papers, “Journal of Vacuum Science and Technology”, Volume A2, (1984), pages 1365 to 1
369 (Journal of Vacuum Science and Technolog
y, A2 (1984) 1365-1369), (Conventional example 2). Many metals and semiconductor elements can be ionized from the EHD ion source, but from the practical viewpoint, gallium (Ga) ions are used in most cases. This is because Ga has a low melting point and a low vapor pressure and is easy to handle as an ionic material, and the emitted ion current is stable and has a long life enough to be put to practical use.
【０００５】[0005]
【発明が解決しようとする課題】ＦＩＢによる微細加工
は極力短時間で済ませたい。一方、加工面は、特に、断
面観察のための凹部形成加工では、平滑な仕上げ面であ
ることも要求される。従来用いられているガリウム集束
イオンビーム（以下Ｇａ・ＦＩＢと略記）は、集束性が
良くビーム電流密度が高いため、高速の微細加工には適
していた。しかし、加工を半導体デバイスの生産ライン
（インライン）で行う場合、ＦＩＢ照射によって試料に
電気的汚染を与えてはならないという制約がある。とこ
ろが、ＧａがＳｉに対して電気的に活性であるため、被
加工物がＳｉウエハやデバイスの場合、たとえ僅かであ
っても試料に照射すると、デバイスやウエハに電気的影
響を与え、デバイスの動作特性に悪影響をもたらすとい
う問題を抱えている。これは電気的汚染であり、デバイ
ス自身だけでなく製造ラインまでも汚染する。製造ライ
ンがＧａで汚染されると、そのラインで製造するデバイ
ス全てに影響を与えるという重大な問題を引き起こすた
め、Ｇａ・ＦＩＢによる微細加工はＳｉ素子の量産製造
ラインでは使用できなかった。The fine processing by FIB is desired to be completed in a short time as much as possible. On the other hand, the processed surface is also required to be a smooth finished surface, especially in the recess forming processing for observing the cross section. The gallium focused ion beam (hereinafter abbreviated as Ga.FIB) conventionally used has good focusing properties and a high beam current density, and is suitable for high-speed fine processing. However, when the processing is performed on the semiconductor device production line (in-line), there is a restriction that the sample should not be electrically contaminated by FIB irradiation. However, since Ga is electrically active with respect to Si, when the workpiece is a Si wafer or device, even if the workpiece is small, when the sample is irradiated, the device and the wafer are electrically affected and the device It has a problem of adversely affecting operating characteristics. This is electrical pollution, which pollutes not only the device itself but also the manufacturing line. If the manufacturing line is contaminated with Ga, it causes a serious problem that it affects all the devices manufactured in that line, so that microfabrication by Ga.FIB cannot be used in the mass production line of Si devices.
【０００６】この問題を解決する最適なイオン種はゲル
マニウム（Ｇｅ）である。Ｇｅは、元素の周期律表上Ｓ
ｉと同族元素で、Ｓｉ基板内でエネルギ順位を形成しな
いので、電気的汚染源とはならない。また、質量がＳｉ
より重いためスパッタしやすく、断面形成等の加工時間
が短縮できる。しかも、使用するイオン材料は、金−ゲ
ルマニウムなどの合金ではなく、Ｇｅ単体を用いること
で、金などの重金属元素を発生することなく、Ｇｅイオ
ンのみを放出するため、重金属汚染の心配もない。従っ
て、Ｇｅ単体をイオン材料とするＧｅ・ＥＨＤイオン源
を用いて、Ｇｅ・ＦＩＢを形成し、これで微細加工する
ことが非汚染微細加工を実現する道である。同じこと
で、ダイヤモンドを主成分とするデバイスに対してＦＩ
Ｂ微細加工を施す場合は、ＳｉやＧｅ単体が好適なイオ
ン材料となる。The most suitable ionic species for solving this problem is germanium (Ge). Ge is S on the periodic table of the elements
Since it is an element in the same group as i and does not form an energy level in the Si substrate, it does not become an electrical pollution source. In addition, the mass is Si
Since it is heavier, it is easier to sputter, and processing time such as cross-section formation can be shortened. Moreover, since the ionic material to be used is not an alloy of gold-germanium or the like but simple substance of Ge, it does not generate a heavy metal element such as gold and releases only Ge ions, so that there is no fear of heavy metal contamination. Therefore, forming a Ge / FIB using a Ge / EHD ion source using Ge alone as an ion material and performing fine processing with this is the way to realize non-polluting fine processing. The same applies to FI for diamond-based devices.
When B microfabrication is performed, Si or Ge simple substance is a suitable ionic material.
【０００７】ところが、Ｇｅ・ＦＩＢ特性を調べた結
果、以下のことが明らかになった。Ｇｅの質量非分離Ｆ
ＩＢの電流密度はＧａ・ＦＩＢの８０％程度を有する
が、放出イオン中にはクラスタイオン(多原子イオン)が
多く含まれているため、従来のＧａ・ＦＩＢに比べて集
束性があまり良くない。Ｇｅ・ＥＨＤイオン源をＦＩＢ
装置に搭載して質量非分離Ｇｅ・ＦＩＢ形成で非汚染微
細加工をしようとすると、上記のように放出イオンには
同位体イオンや多原子イオンを多く含むため、集束性が
悪く、いわゆる、ビームぼけの状態になり、微細な加工
がしにくくなる問題が生じることが明らかになった。従
来のＦＩＢ加工は、質量非分離のＧａやＩｎイオンビー
ムによってなされていた。ＧａやＩｎイオン源から放出
するイオン種の殆どが１原子１価イオンで、質量分離を
施さなくても集束性に影響を与えなかったため、従来の
微細加工専用のＦＩＢ装置には敢えて質量分離器を搭載
する必要がなかった。However, as a result of examining the Ge / FIB characteristics, the following has become clear. Ge mass non-separation F
The current density of IB is about 80% of that of Ga.FIB, but since the emitted ions contain many cluster ions (polyatomic ions), their focusing properties are not so good as compared with conventional Ga.FIB. . FIB for Ge / EHD ion source
When attempting to perform non-polluting fine processing by mass non-separation Ge / FIB formation in an apparatus, the emitted ions contain a large amount of isotope ions and polyatomic ions as described above, so that the focusing property is poor and so-called beam It became clear that there was a problem of becoming blurred and making fine processing difficult. Conventional FIB processing has been performed by Ga and In ion beams that do not have mass separation. Most of the ion species emitted from Ga and In ion sources are monoatomic monovalent ions, and they did not affect the focusing property without mass separation, so the conventional FIB device dedicated to microfabrication was intentionally mass separated. Did not have to be loaded.
【０００８】また、質量分離してＧｅの同位体中最大強
度を有する質量数７４の２価イオン（以下、74Ｇｅ2+と
記載）をＦＩＢ化させると、集束性は格段に良くなる
が、その電流密度はＧａ・ＦＩＢの１／１０程度に低下
する。つまり、微細加工には最適だが、加工時間がかか
るという問題を有している。Further, when the divalent ion having a mass number of 74 and having the maximum intensity in the isotope of Ge (hereinafter referred to as 74 Ge 2 +) is mass-separated into FIB, the focusing property is remarkably improved. The current density is reduced to about 1/10 of that of Ga · FIB. In other words, it is optimal for fine processing, but it has a problem that it requires a long processing time.
【０００９】本発明の目的は、ウエハやデバイスなどの
試料に対してＦＩＢを照射して、デバイス自身もしくは
その製造ラインにコンタミネイションを与えることなく
微細加工が行え、かつ、短時間で精密に微細加工の行え
る方法およびそれを実現するための装置を提供すること
である。An object of the present invention is to irradiate a sample such as a wafer or a device with FIB to perform microfabrication without giving contamination to the device itself or its manufacturing line, and to perform precise microfabrication in a short time. It is an object of the present invention to provide a method capable of processing and an apparatus for realizing the method.
【００１０】[0010]
【課題を解決するための手段】上記目的は、高速微細加
工を行う方法として、質量非分離でＦＩＢ化してビーム
集束性を多少犠牲にして短時間に行う粗加工工程と、逆
に、ビーム電流密度を犠牲にして質量分離を行った集束
性の高い特定イオン種ＦＩＢによって行う仕上げ加工工
程からなる微細加工方法によって達成される。SUMMARY OF THE INVENTION The above-mentioned object is, as a method for performing high-speed fine processing, a rough processing step of performing FIB without mass separation and sacrificing the beam focusing property in a short time, and conversely, a beam current This is achieved by a fine processing method including a finishing process performed by a highly focused specific ionic species FIB that has been subjected to mass separation at the expense of density.
【００１１】この方法において、質量非分離のＦＩＢイ
オン種が加工すべき試料の主成分元素とは異種元素で、
かつ、周期律表において上記主成分元素と同族の単体元
素であることにより、試料に電気的汚染を与えずに行え
る。特に、試料がＳｉのウエハやデバイスの場合、上記
質量非分離のＦＩＢイオン種がＧｅイオンであると、Ｆ
ＩＢによる微細加工を行っても電気的汚染を与えない。
また、ダイヤモンド基板のデバイスの加工にはダイヤモ
ンド（炭素）と同族のＳｉまたはＧｅ・ＦＩＢを用いれ
ば良い。In this method, the non-mass separated FIB ion species is a different element from the main element of the sample to be processed,
In addition, since the element is a single element that is in the same group as the main component element in the periodic table, it can be performed without electrical contamination of the sample. In particular, when the sample is a wafer or device of Si, if the non-mass separated FIB ion species is Ge ion, F
Even if microfabrication by IB is performed, electrical pollution is not given.
Further, Si or Ge.FIB, which is in the same family as diamond (carbon), may be used for processing the device of the diamond substrate.
【００１２】また、仕上げ加工で用いるビームは、集束
性がよい２価イオンビームを用いるか、さらに、質量数
７４または７２のゲルマニウム２価イオンビームを用い
ることで加工面は平滑になる。As the beam used for finishing, a divalent ion beam having a good focusing property or a germanium divalent ion beam having a mass number of 74 or 72 is used to smooth the processed surface.
【００１３】また、上記微細加工が、具体的には、断面
を露出させるための凹部形成加工である時に効果を発揮
する。The above-mentioned fine processing is effective when it is specifically a recess forming processing for exposing the cross section.
【００１４】さらに、これらの微細加工方法を実現する
には、所望のイオンを放出するイオン源と、放出イオン
を集束化するイオンビーム集束系と、上記放出イオンを
質量分離する質量分離器と、上記集束イオンビームを走
査する偏向器と、加工すべき試料を保持する試料台から
なる集束イオンビーム装置において、特に、上記イオン
源が、加工すべき試料の主成分元素とは異種元素で、か
つ、元素の周期律表において上記主成分元素と同族の単
体元素をイオン材料とするＥＨＤイオン源である微細加
工装置によって実現される。また、上記微細加工装置に
おいて、加工すべき試料の主成分がシリコンであり、イ
オン源が、ゲルマニウム単体をイオン材料とするＥＨＤ
イオン源である微細加工装置によってＳｉデバイスを電
気的汚染させずに微細加工できる。さらに、７４以上の
質量分解能を有する質量分離器を搭載したＦＩＢ装置に
よって、74Ｇｅ2+または72Ｇｅ2+のＦＩＢを得ることが
でき、ＦＩＢの集束性が良くなり、微細性を要求される
仕上げ加工を実現するFIB装置を提供できる。また、集
束イオンビーム装置において、加工すべき試料の主成分
が炭素である場合、上記イオン源が、Ｇｅ単体またはＳ
ｉ単体をイオン材料とするＥＨＤイオン源によって構成
することで、ダイヤモンド基板デバイスを電気的汚染な
しに高速にかつ精密に微細な加工を実現できる微細加工
装置が提供できる。Further, in order to realize these fine processing methods, an ion source for emitting desired ions, an ion beam focusing system for focusing the emitted ions, and a mass separator for mass-separating the emitted ions, In a focused ion beam apparatus comprising a deflector that scans the focused ion beam and a sample stage that holds a sample to be processed, in particular, the ion source is a different element from the main component element of the sample to be processed, and This is realized by a microfabrication device which is an EHD ion source that uses an elemental material of the same group as the main component element in the periodic table of elements as an ion material. Further, in the above-described fine processing apparatus, the main component of the sample to be processed is silicon, and the ion source is EHD using germanium simple substance as an ionic material.
The microfabrication device, which is an ion source, enables microfabrication of the Si device without electrical contamination. Furthermore, an FIB device equipped with a mass separator having a mass resolution of 74 or more can obtain 74 Ge 2 + or 72 Ge 2 + FIB, which improves the focusing property of FIB and requires fineness. It is possible to provide a FIB device that realizes finishing processing. Further, in the focused ion beam apparatus, when the main component of the sample to be processed is carbon, the ion source is Ge alone or S
By using an EHD ion source in which i is a simple substance as an ionic material, it is possible to provide a microfabrication apparatus capable of realizing high-speed and precise microfabrication of a diamond substrate device without electrical contamination.
【００１５】[0015]
【作用】イオン源に、試料の主成分元素とは異種元素で
周期律表上同族元素をイオン材料としたＥＨＤイオン源
を用いることにより、照射したイオンビームで試料やそ
の製造ラインに対して電気的コンタミネイションを与え
ることはない。試料の主成分元素とは異種で周期律表上
同族の単体元素の例として、試料がＳｉウエハやＳｉデ
バイスの場合にはＧｅ単体が、ダイヤモンド基板デバイ
スに対してはＳｉやＧｅが相当する。ＧｅやＳｉ単体を
イオン材料としたＥＨＤイオン源を用いて、これから得
られる高電流密度のＦＩＢを試料に照射することで、試
料やその製造ラインに電気的汚染を与えることなく微細
加工が行える。[Function] By using as the ion source an EHD ion source in which an element different from the main constituent element of the sample in the periodic table and a homologous element in the periodic table is used as an ion material, the irradiated ion beam is used to generate electricity to the sample and its manufacturing line. It does not give static contamination. As an example of a simple substance element that is different from the main component element of the sample and is a homologous group in the periodic table, Ge simple substance corresponds when the sample is a Si wafer or Si device, and Si or Ge corresponds to the diamond substrate device. By using an EHD ion source using Ge or Si alone as an ion material and irradiating the sample with a high current density FIB obtained from this, microfabrication can be performed without electrically contaminating the sample or its manufacturing line.
【００１６】また、たとえば、Ｇｅ・ＦＩＢで効率よ
く、かつ、精密に微細加工を行うには、まず、粗加工と
して、質量非分離のＧｅ・ＦＩＢで行う。この時、質量
非分離のＧｅ・ＦＩＢには多種類のイオン種（多価イオ
ンや多原子イオン，同位体イオン）が混在するためビー
ム集束性はあまり良くないが、ビーム電流密度は高密度
であるため、高速加工が可能である。所望の形状になる
直前まで粗加工し、仕上げ加工に移る。仕上げ加工には
質量分離した集束性のよいＦＩＢを用いることで精密な
加工ができる。Ｇｅビームの場合、74Ｇｅ2+を用いるこ
とで、質量分離したイオン種の中で最も高電流密度のビ
ームが得られ、集束性が良い。Further, for example, in order to perform fine machining efficiently and precisely with Ge.FIB, first, rough machining is performed with non-mass separated Ge.FIB. At this time, since many kinds of ion species (multivalent ions, polyatomic ions, and isotope ions) are mixed in the non-mass separated Ge / FIB, the beam focusing property is not so good, but the beam current density is high. Therefore, high-speed processing is possible. Roughly work until just before the desired shape, and then move to finishing. Precise machining can be performed by using FIB which is mass-separated and has good focusing property. In the case of Ge beam, by using 74 Ge 2 +, the beam having the highest current density among the ion species separated by mass can be obtained and the focusing property is good.
【００１７】このようなイオン種のＦＩＢによる試料へ
の照射により、試料やその製造ラインにコンタミネイシ
ョンを与えることなく、微細加工，試料表面の観察、ま
た、試料からの信号を利用した分析や計測することで試
料自身またはその製造来歴を検査するための微細加工が
可能となる。By irradiating a sample with such an ion species by FIB, microfabrication, observation of the sample surface, analysis and measurement using signals from the sample, without giving contamination to the sample or its manufacturing line. By doing so, fine processing for inspecting the sample itself or the manufacturing history thereof becomes possible.
【００１８】ここで、質量非分離のＧｅ・ＦＩＢと質量
分離後の75Ｇｅ2+・ＦＩＢのビーム径と電流密度の大小
関係を定性的に示す測定結果を示す。図２は質量非分離
のＧｅイオンと質量分離後の75Ｇｅ2+イオンのエネルギ
分布である。横軸は基準エネルギに対する相対エネルギ
を電子ボルト単位で示し、縦軸は相対イオン強度で、任
意単位で示した。２本の分布のうち、３１で示したの
は、質量非分離のＧｅイオンのエネルギ分布であり、３
２の曲線は質量分離後の75Ｇｅ2+のエネルギ分布を示し
ている。この時の全放出イオン電流値は１μＡである。
また、各分布のピーク位置は作図時に一致させてある。
分布３１の半値幅は約１５ｅＶであり、分布３２は約８
ｅＶである。また、イオン強度を比較すると、約２／３
である。到達電流（分布の積分値）で比較すると、分布
３２は分布３１の約１／１０である。この結果からも、
質量非分離の電流強度は質量分離後のものに比較して大
きいが、エネルギ拡がりも大きいため、微細性を要求し
ない高速加工に適し、イオン強度は弱いがエネルギ拡が
りの小さい質量分離後のビームが好ましいことがわか
る。[0018] Here, the 75 Ge 2 + · FIB measurement results qualitatively indicating the magnitude relationship between the beam diameter and current density after Ge · FIB and mass separation of mass non-separation. FIG. 2 shows energy distributions of non-mass separated Ge ions and 75 Ge 2 + ions after mass separation. The horizontal axis represents the relative energy with respect to the reference energy in the unit of electron volt, and the vertical axis represents the relative ion intensity in the arbitrary unit. Of the two distributions, 31 is the energy distribution of non-mass separated Ge ions.
The second curve shows the energy distribution of 75 Ge 2 + after mass separation. At this time, the total emitted ion current value is 1 μA.
In addition, the peak positions of each distribution are matched at the time of plotting.
The half width of the distribution 31 is about 15 eV, and the distribution 32 is about 8 eV.
eV. Also, comparing the ionic strength, it is about 2/3
Is. The distribution 32 is about 1/10 of the distribution 31 when compared with the reaching current (integrated value of the distribution). From this result,
The current intensity of non-mass separation is higher than that after mass separation, but the energy spread is also large, so it is suitable for high-speed processing that does not require fineness, and the ion strength is weak but the beam after mass separation with small energy spread is It turns out to be preferable.
【００１９】[0019]
【実施例】以下、本発明による実施例を図１を用いて説
明する。図１はＦＩＢ装置であり、１１はイオン源、１
５，１５′は集束レンズ、１６は質量分離器（ウィーン
フィルタ）であり、２０は試料である。本実施例ではイ
オン源１１は、イオン材料がゲルマニウム単体であるＥ
ＨＤイオン源であり、試料２０はシリコンメモリデバイ
スである。Embodiment An embodiment according to the present invention will be described below with reference to FIG. FIG. 1 shows an FIB apparatus, 11 is an ion source, and 1
Reference numerals 5 and 15 'are focusing lenses, 16 is a mass separator (Wien filter), and 20 is a sample. In the present embodiment, the ion source 11 has an ionic material E that is germanium simple substance.
It is an HD ion source, and the sample 20 is a silicon memory device.
【００２０】質量分離器１６は、電磁石と平行電極を組
み合わせたウィーンフィルタであり質量分解能は８０
で、質量数７３と７４のＧｅの同位体を分離することが
できる。また、電極，磁極を動作させないことで、放出
イオンは質量分離されない。イオン源１１ではイオン材
料であるＧｅ単体が溶融状態にされ、引出し電極に高電
圧を印加することで、エミッタ１２先端からＧｅイオン
として放出される。放出イオンは、ビーム制限アパチャ
１４で拡がりが制限され、中心近傍のイオンのみが下流
へ導かれる。集束レンズ１５によってイオンビームは絞
られ質量分離器１６に入る。質量分離器１６によってＧ
ｅイオンビームは質量分離され、最大強度を持つ質量数
７４のＧｅ２価イオンのみが選択され、絞り１７を通過
する。ここでは、質量分解能を最大能力にして、質量数
７４のＧｅ２価イオンのみを選択したが、分解能を弱
め、２価イオンについて同位体まで分離せずに絞り１７
を通過させることで、質量数７４のＧｅ２価イオンのみ
のビームよりイオン電流量は多くなる。絞り１７は大小
数種類の開口を有し、集束性に合わせて選択する。絞り
１７を通過したイオンビームは集束レンズ１５′によっ
て再度集束され、ＦＩＢ２１となり試料ステージ１９上
の試料２０に照射される。この時、FIB21は偏向器によ
って試料２０上で走査，掃引することができる。ＦＩＢ
２１照射によって、試料２０から二次電子２２が放出さ
れ、二次電子検出器２３によって検出される。検出信号
をＣＲＴ（図示せず）に入力し、ＣＲＴの掃引と偏向器
１８の掃引の同期をとると、ＦＩＢ照射領域の二次電子
像を見ることができ、試料の微小部を観察することがで
きる。これら部品は全て真空容器２５内に納められてお
り、本装置では、バルブ２４，２４′によって、他の装
置と連結され、試料の相互のやり取りを行うことが可能
である。The mass separator 16 is a Wien filter in which an electromagnet and a parallel electrode are combined and has a mass resolution of 80.
The Ge isotopes with mass numbers 73 and 74 can be separated. In addition, the emitted ions are not mass-separated by not operating the electrodes and magnetic poles. In the ion source 11, a simple substance of Ge, which is an ionic material, is brought into a molten state, and when a high voltage is applied to the extraction electrode, Ge ions are emitted from the tip of the emitter 12. The spread of the ejected ions is limited by the beam limiting aperture 14, and only the ions near the center are guided to the downstream. The ion beam is focused by the focusing lens 15 and enters the mass separator 16. G by mass separator 16
The e-ion beam is mass-separated, and only Ge2-charged ions with a mass number of 74 having the maximum intensity are selected and pass through the diaphragm 17. Here, the mass resolving power is set to the maximum capacity, and only Ge 2 valence ions with a mass number of 74 are selected.
By passing through, the amount of ion current becomes larger than that of the beam of only Ge divalent ions having a mass number of 74. The diaphragm 17 has large and small types of apertures and is selected according to the focusing property. The ion beam that has passed through the diaphragm 17 is focused again by the focusing lens 15 ′, becomes the FIB 21, and is irradiated onto the sample 20 on the sample stage 19. At this time, the FIB 21 can be scanned and swept on the sample 20 by the deflector. FIB
The secondary electrons 22 are emitted from the sample 20 by the irradiation of 21 and detected by the secondary electron detector 23. When a detection signal is input to a CRT (not shown) and the sweep of the CRT and the sweep of the deflector 18 are synchronized, a secondary electron image of the FIB irradiation area can be seen, and a minute portion of the sample can be observed. You can All of these parts are housed in a vacuum container 25, and in this device, valves 24 and 24 'are connected to other devices so that samples can be exchanged with each other.
【００２１】次に、本装置でデバイスの特定部分の断面
を観察するための矩形凹部形成方法について説明する。
まず、質量分離器１６を動作させない状態でイオンビー
ムを集束させ、このＦＩＢ２１を試料４０面上で矩形に
走査させる。図３（ａ）はデバイス表面の一部を示し、
斜線部はＦＩＢの走査領域４１である。この時の質量非
分離ＧｅＦＩＢ４２のビーム径は１００ｎｍ、電流密度
は約４Ａ／cm2 、エネルギは２５ｋｅＶである。およそ
２分のビーム走査により、図３（ｂ）のような縦横４×
６μｍ、深さ４μｍの矩形凹部４３が形成できた。この
ままでは、矩形凹部４３の側面４４は凹凸が大きく、断
面を詳細に観察することができない。Next, a method of forming a rectangular recess for observing a cross section of a specific portion of the device with this apparatus will be described.
First, the ion beam is focused without operating the mass separator 16, and the FIB 21 is scanned in a rectangular shape on the surface of the sample 40. FIG. 3A shows a part of the device surface,
The shaded area is the scanning area 41 of the FIB. At this time, the beam diameter of the non-mass separated GeFIB 42 is 100 nm, the current density is about 4 A / cm 2 , and the energy is 25 keV. By scanning the beam for about 2 minutes, the vertical and horizontal 4 × as shown in FIG.
A rectangular recess 43 having a size of 6 μm and a depth of 4 μm could be formed. In this state, the side surface 44 of the rectangular recess 43 has large irregularities, and the cross section cannot be observed in detail.
【００２２】次に、質量分離器１６を動作させ、質量数
７４のゲルマニウム２価イオン（74Ｇｅ2+）を分離し、
集束させる。（図３（ｃ）参照）この時の74Ｇｅ2+・Ｆ
ＩＢ４５はビーム径２０ｎｍで、電流密度０.５Ａ／cm2
である。この74Ｇｅ２＋・ＦＩＢ４５を観察すべき断面
に沿って数回走査することで、凹部側面（断面）４６は
平滑になり、断面の材質の違いによるコントラストが強
調され、断面構造の詳細な観察ができるようになった。Next, the mass separator 16 is operated to separate the germanium divalent ions ( 74 Ge 2 +) having a mass number of 74,
Focus. (See Fig. 3 (c)) 74 Ge 2 + · F at this time
The IB45 has a beam diameter of 20 nm and a current density of 0.5 A / cm 2.
Is. By scanning the 74 Ge 2 + · FIB 45 several times along the cross section to be observed, the recess side surface (cross section) 46 becomes smooth, the contrast due to the difference in the material of the cross section is emphasized, and detailed observation of the cross section structure is performed. Is now possible.
【００２３】本方法の最大の特徴は、用いるビーム種が
１種類であり、しかも、試料とは周期律表上同族の元素
のＧｅであるため、Ｓｉウエハを電気的汚染を発生する
ことなく、しかも、高電流密度の非質量分離のＦＩＢ４
２による粗加工モード（図３ｂ）と、質量分離した細束
ＦＩＢ４５による仕上げ加工モード（図３ａ）を使い分
けるため、側面の平滑な凹部を高速に形成することがで
きる点にある。The most important feature of this method is that only one type of beam is used, and since the sample is Ge, which is an element of the same group in the periodic table, the Si wafer is not electrically contaminated. Moreover, high current density non-mass separated FIB4
The rough processing mode according to No. 2 (FIG. 3b) and the finishing processing mode according to the mass-separated fine bundle FIB45 (FIG. 3a) are used separately, so that the concave portions having smooth side surfaces can be formed at high speed.
【００２４】ここで、粗加工モードと仕上げ加工モード
の切り替えには、以下の手段を用いる。仕上げ加工モー
ドで用いるイオン種は予め定めておき、加速電圧と質量
分離器の電極と磁極への投入電圧，電流値、更に、使用
する絞りの開口を予めＦＩＢ制御装置（図示せず）にメ
モリしておく。粗加工終了後、仕上げ加工に入る際、Ｆ
ＩＢ制御装置で仕上げ加工モードを指示するだけで、質
量分離器の電極と磁極への投入電圧，電流値，使用する
絞りの開口を自動的に設定でき、細束ＦＩＢによる仕上
げ加工に移ることができる。Here, the following means is used to switch between the rough machining mode and the finish machining mode. The ion species used in the finishing processing mode are determined in advance, and the FIB controller (not shown) stores in memory the acceleration voltage, the voltage applied to the electrodes and magnetic poles of the mass separator, the current value, and the aperture used. I'll do it. After finishing roughing, when entering finishing, F
By simply instructing the finishing mode with the IB controller, the applied voltage to the electrodes and magnetic poles of the mass separator, the current value, and the aperture of the diaphragm to be used can be set automatically, and the finishing process with the fine bundle FIB can be performed. it can.
【００２５】本方法はＧｅ・ＦＩＢのＳｉデバイスへの
適用ばかりでなく、ダイヤモンド基板デバイスをＳｉ・
ＦＩＢもしくはＧｅ・ＦＩＢによって微細加工する時も
適用することができる。This method can be applied not only to the application of Ge.FIB to Si devices but also to the Si.
It can also be applied when performing fine processing by FIB or Ge.FIB.
【００２６】[0026]
【発明の効果】本発明により、試料に電気的汚染を与え
ることなく、高速で、かつ、精密な加工面を形成する微
細加工方法を提供することができる。According to the present invention, it is possible to provide a fine processing method for forming a precise processed surface at high speed without giving electric contamination to a sample.
【図１】本発明の一実施例の集束イオンビーム装置の説
明図。FIG. 1 is an explanatory diagram of a focused ion beam device according to an embodiment of the present invention.
【図２】質量非分離のイオンと質量分離後のイオンのエ
ネルギ分布図。FIG. 2 is an energy distribution diagram of non-mass separated ions and ions after mass separation.
【図３】本発明の微細加工方法を用いた矩形穴形成加工
を示す説明図。FIG. 3 is an explanatory view showing a rectangular hole forming process using the fine processing method of the present invention.
１１…イオン源、１２…エミッタ、１３…引出し電極、
１４…ビーム制限アパチャ、１５，１５′…集束レン
ズ、１６…質量分離器、１７…絞り、１８…偏向器、１
９…試料ステージ、２０…試料、２１…ＦＩＢ、２２…
二次電子、２３…二次電子検出器、２４，２４′…バル
ブ、２５…真空容器。11 ... Ion source, 12 ... Emitter, 13 ... Extraction electrode,
14 ... Beam limiting aperture, 15, 15 '... Focusing lens, 16 ... Mass separator, 17 ... Aperture, 18 ... Deflector, 1
9 ... Sample stage, 20 ... Sample, 21 ... FIB, 22 ...
Secondary electron, 23 ... Secondary electron detector, 24, 24 '... Valve, 25 ... Vacuum container.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｊ 37/317 Ｄ 9172−5Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01J 37/317 D 9172-5E
Claims (11)
いた微細加工方法において、質量非分離の集束イオンビ
ームの走査によって試料の粗加工を行う工程と、質量分
離を行った特定イオン種の集束イオンビームの走査によ
って仕上げ加工を行う工程とからなることを特徴とする
微細加工方法。1. In a fine processing method using a focused ion beam of a single element ion species, a step of rough-processing a sample by scanning a focused ion beam without mass separation, and focusing of a specific ion species subjected to mass separation. A fine processing method comprising a step of performing a finishing process by scanning with an ion beam.
イオンビーム種が加工すべき試料の主成分元素とは異種
で、元素の周期律表において上記主成分元素と同族の単
体元素イオンである微細加工方法。2. The focused non-separated focused ion beam species according to claim 1, which is different from a main component element of a sample to be processed and is a single element ion of the same group as the main component element in the periodic table of elements. A fine processing method.
き試料の主成分がシリコンであり、上記質量非分離の集
束イオンビーム種がゲルマニウムイオンである微細加工
方法。3. The microfabrication method according to claim 1, wherein the main component of the sample to be processed is silicon, and the non-mass separated focused ion beam species is germanium ion.
成分元素がシリコンであり、上記質量非分離の集束イオ
ンビーム種がゲルマニウムイオンで、質量分離を行った
特定イオン種が、特に、ゲルマニウム２価イオンである
微細加工方法。4. The method according to claim 1, wherein the main component element of the sample is silicon, the non-mass separated focused ion beam species is germanium ion, and the specific ion species subjected to the mass separation is particularly germanium. A microfabrication method that is divalent ions.
特定イオン種が、質量数７２または７４のゲルマニウム
２価イオンである微細加工方法。5. The microfabrication method according to claim 4, wherein the specific ion species subjected to the mass separation is germanium divalent ions having a mass number of 72 or 74.
き試料の主成分が炭素であり、上記質量非分離の集束イ
オンビーム種がゲルマニウムイオンまたはシリコンイオ
ンであり、上記質量分離を行った特定イオン種が、特
に、ゲルマニウム２価イオンまたはシリコン２価イオン
である微細加工方法。6. The method according to claim 1 or 2, wherein the main component of the sample to be processed is carbon, the non-mass separated focused ion beam species is germanium ion or silicon ion, and the mass separation is performed. The microfabrication method in which the ionic species is, in particular, germanium divalent ion or silicon divalent ion.
て、上記粗加工および仕上げ加工が、試料の断面を露出
させるための凹部形成加工である微細加工方法。7. A fine processing method according to claim 1, 2, 3, 4, 5 or 6, wherein said roughing and finishing are recess forming for exposing the cross section of the sample.
イオンを集束化するイオンビーム集束系と、上記放出イ
オンを質量分離する質量分離器と、上記集束イオンビー
ムを走査する偏向器と、加工すべき試料を保持する試料
台とからなる集束イオンビーム装置において、上記イオ
ン源が、加工すべき試料の主成分元素とは異種元素で、
周期律表において上記主成分元素と同族の単体元素をイ
オン材料とするＥＨＤイオン源であることを特徴とする
微細加工装置。8. An ion source for emitting desired ions, an ion beam focusing system for focusing the emitted ions, a mass separator for mass-separating the emitted ions, and a deflector for scanning the focused ion beam. In a focused ion beam device consisting of a sample table for holding a sample to be processed, the ion source is a different element from the main element of the sample to be processed,
A microfabrication device, which is an EHD ion source using an elemental material of the same main group element as the ion material in the periodic table.
主成分がシリコンであり、上記イオン源が、ゲルマニウ
ム単体をイオン材料とするＥＨＤイオン源である微細加
工装置。9. The microfabrication apparatus according to claim 8, wherein the main component of the sample to be processed is silicon, and the ion source is an EHD ion source using germanium simple substance as an ion material.
４以上の質量分解能を有する微細加工装置。10. The mass separator according to claim 8,
A fine processing device having a mass resolution of 4 or more.
の主成分が炭素であり、上記イオン源が、ゲルマニウム
単体またはシリコン単体をイオン材料とするＥＨＤイオ
ン源である微細加工装置。11. The microfabrication apparatus according to claim 8, wherein the main component of the sample to be processed is carbon, and the ion source is an EHD ion source using germanium simple substance or silicon simple substance as an ion material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6084361A JPH07296756A (en) | 1994-04-22 | 1994-04-22 | Fine working method, and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6084361A JPH07296756A (en) | 1994-04-22 | 1994-04-22 | Fine working method, and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07296756A true JPH07296756A (en) | 1995-11-10 |
Family
ID=13828392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6084361A Pending JPH07296756A (en) | 1994-04-22 | 1994-04-22 | Fine working method, and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07296756A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003092033A1 (en) * | 2002-04-23 | 2003-11-06 | National Institute Of Advanced Industrial Science And Technology | Polynuclear metal molecular beam apparatus |
| JP2006352162A (en) * | 2006-09-01 | 2006-12-28 | Toshiba Corp | Method of manufacturing semiconductor device |
| JP2007003418A (en) * | 2005-06-24 | 2007-01-11 | Institute Of Physical & Chemical Research | Charged particle beam deflecting/converging method and charged particle beam deflecting/converging equipment |
| US7411192B2 (en) | 2004-07-29 | 2008-08-12 | Hitachi High-Technologies Corporation | Focused ion beam apparatus and focused ion beam irradiation method |
| WO2009020150A1 (en) * | 2007-08-08 | 2009-02-12 | Sii Nanotechnology Inc. | Composite focused ion beam apparatus, and machining monitoring method and machining method using composite focused ion beam apparatus |
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| WO2011118744A1 (en) * | 2010-03-26 | 2011-09-29 | 株式会社日立ハイテクノロジーズ | Composite charged-particle-beam apparatus |
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1994
- 1994-04-22 JP JP6084361A patent/JPH07296756A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003092033A1 (en) * | 2002-04-23 | 2003-11-06 | National Institute Of Advanced Industrial Science And Technology | Polynuclear metal molecular beam apparatus |
| US7411192B2 (en) | 2004-07-29 | 2008-08-12 | Hitachi High-Technologies Corporation | Focused ion beam apparatus and focused ion beam irradiation method |
| JP2007003418A (en) * | 2005-06-24 | 2007-01-11 | Institute Of Physical & Chemical Research | Charged particle beam deflecting/converging method and charged particle beam deflecting/converging equipment |
| JP4713242B2 (en) * | 2005-06-24 | 2011-06-29 | 独立行政法人理化学研究所 | Charged particle beam deflection / focusing method and charged particle beam deflection / focusing device |
| US7550740B2 (en) | 2006-07-27 | 2009-06-23 | Hitachi High-Technologies Corporation | Focused ION beam apparatus |
| JP2006352162A (en) * | 2006-09-01 | 2006-12-28 | Toshiba Corp | Method of manufacturing semiconductor device |
| WO2009020150A1 (en) * | 2007-08-08 | 2009-02-12 | Sii Nanotechnology Inc. | Composite focused ion beam apparatus, and machining monitoring method and machining method using composite focused ion beam apparatus |
| JPWO2009020150A1 (en) * | 2007-08-08 | 2010-11-04 | エスアイアイ・ナノテクノロジー株式会社 | Composite focused ion beam apparatus and processing observation method and processing method using the same |
| WO2011118744A1 (en) * | 2010-03-26 | 2011-09-29 | 株式会社日立ハイテクノロジーズ | Composite charged-particle-beam apparatus |
| JP2011204570A (en) * | 2010-03-26 | 2011-10-13 | Hitachi High-Technologies Corp | Composite charged particle beam device |
| US20130001420A1 (en) * | 2010-03-26 | 2013-01-03 | Hitachi High-Technologies Corporation | Composite Charged-Particle-Beam Apparatus |
| US8581219B2 (en) | 2010-03-26 | 2013-11-12 | Hitachi High-Technologies Corporation | Composite charged-particle-beam apparatus |
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