JPH07273145A - Mounting method for tab semiconductor device - Google Patents

Mounting method for tab semiconductor device

Info

Publication number
JPH07273145A
JPH07273145A JP5840894A JP5840894A JPH07273145A JP H07273145 A JPH07273145 A JP H07273145A JP 5840894 A JP5840894 A JP 5840894A JP 5840894 A JP5840894 A JP 5840894A JP H07273145 A JPH07273145 A JP H07273145A
Authority
JP
Japan
Prior art keywords
semiconductor device
tab
anisotropic conductive
conductive adhesive
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5840894A
Other languages
Japanese (ja)
Inventor
Takao Sato
尊夫 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP5840894A priority Critical patent/JPH07273145A/en
Publication of JPH07273145A publication Critical patent/JPH07273145A/en
Pending legal-status Critical Current

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  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a method for mounting a TAB semiconductor device punched from a TAB tape onto an outer circuit board through an anisotropic conductive adhesive in which open circuit or short circuit failure due to chips produced through punching of the TAB tape is prevented. CONSTITUTION:A conductive foil is laminated on a long insulating tape 1 provided with through holes at a predetermined interval and then it is etched. A semiconductor pellet 4 is set in a through hole of a TAB tape 3 on which a conductive pattern is formed including an outer lead 2b and an inner lead extending over the through hole. An electrode on a pellet is then connected electrically with the inner lead 2a to obtain an intermediate structure of TAB semiconductor device to which an anisotropic conductive adhesive 7 is applied while intersecting the outer lead 2b. Semiconductor device regions are punched from the TAB tape 3 and separated into individual semiconductor devices. The adhesive 7 of a separated device is then stuck to a predetermined conductive pattern region of an object to be connected and hot pressed thus connecting the outer lead of TAB semiconductor device with the conductive pattern.

Description

【発明の詳細な説明】Detailed Description of the Invention

【産業上の利用分野】本発明は長尺のＴＡＢテープを打
ち抜いて形成したＴＡＢ式半導体装置を異方性導電接着
材を介して外部回路基板に実装する実装方法に関し、特
にＴＡＢテープを所定形状に打ち抜く際に生じる問題を
解決したＴＡＢ式半導体装置の実装方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting method for mounting a TAB type semiconductor device formed by punching out a long TAB tape on an external circuit board via an anisotropic conductive adhesive, and particularly to mounting the TAB tape in a predetermined shape. The present invention relates to a mounting method of a TAB type semiconductor device that solves a problem that occurs when punching.

【従来の技術】ＴＡＢ式半導体装置の製造過程での構造
を図４及び図５から説明する。図において、１は所定の
間隔で透孔１ａを穿設した長尺の絶縁テープ、２は絶縁
テープ１に積層した導電箔をエッチングして形成された
導電パターンで、透孔１ａ内に延在するインナリード２
ａとその外端部となるアウタリード２ｂとを含む。絶縁
テープ１と導電パターン２とでＴＡＢテープ３を構成し
ている。４は表面に多数の電極４ａを形成した半導体ペ
レットで、透孔１ａ内に配置されその電極４ａをインナ
リード２ａと重合して電気的に接続されている。この中
間構体は図示しないが半導体ペレット４の表面を樹脂で
被覆して防湿処理をした後、図４に示す絶縁テープ１上
の点線部分が上下切断金型を用いて切断され個々のＴＡ
Ｂ式半導体装置に分離される。このＴＡＢ式半導体装置
は、金属板をプレス又はエッチングして形成したリード
フレームを用いた半導体装置に比してリードの巾、間隔
を微細にできるため多リード化に適しており、通常は外
部の導電リードや導電パターン上にアウタリードを重合
し、リフロー法による半田付けや超音波ボンディング、
熱圧着の手段により接続されるが、例えば多リードの液
晶表示装置のように熱に弱く機械的強度の低い接続対象
に対しては図６に示すようにアウタリード２ｂと接続対
象５の導電パターン５ａとの間に異方性導電接着材６を
介挿して、アウタリード２ｂと異方性導電接着材６及び
異方性導電接着剤６と導電パターン５ａとの間で圧着接
続することによって電気的に接続し、微細ピッチの多リ
ード接続に対応している。この接続作業は、ＴＡＢテー
プ３の所定領域を上下金型にて切断して個々のＴＡＢ式
半導体装置に分離し、絶縁テープ１上の多数のアウタリ
ード２ｂを横切って異方性導電接着材６を貼り付けて圧
着し、このＴＡＢ式半導体装置を接続対象５上に持って
きてアウタリード２ｂと接続対象５の導電パターン５ａ
とを異方性導電接着剤６を介して位置決めして加熱圧着
して接続する。ここで、異方性導電接着剤６はその接続
予定部分が露呈しないように剥離紙（図示せず）が貼り
付けられて保護されており、ＴＡＢテープ１の切断工程
と接続対象５との接続工程との間は通常離れているた
め、ＴＡＢテープ１に貼り付けられた異方性導電接着剤
５は剥離紙で保護された状態で移動し、接続対象５に接
続される直前に剥離紙が除去される。この異方性導電接
着材６は、先ずＴＡＢ式半導体装置に貼り付けるだけで
なく、接続対象５に予め貼り付けることも行われてい
る。（例えば実開昭６３−１７１４９号公報、実開昭６
３−１７１５０号公報参照）2. Description of the Related Art A structure of a TAB type semiconductor device in a manufacturing process will be described with reference to FIGS. In the figure, 1 is a long insulating tape having through holes 1a formed at predetermined intervals, 2 is a conductive pattern formed by etching a conductive foil laminated on the insulating tape 1, and extends in the through hole 1a. Inner lead 2
a and an outer lead 2b which is an outer end portion thereof. The insulating tape 1 and the conductive pattern 2 form a TAB tape 3. Reference numeral 4 denotes a semiconductor pellet having a large number of electrodes 4a formed on the surface thereof, which is disposed in the through hole 1a and is electrically connected by polymerizing the electrode 4a with the inner lead 2a. Although this intermediate structure is not shown, the surface of the semiconductor pellet 4 is covered with resin to be moisture-proofed, and then the dotted line portion on the insulating tape 1 shown in FIG.
It is separated into a B type semiconductor device. This TAB type semiconductor device is suitable for multi-leading because the width and interval of leads can be made finer than a semiconductor device using a lead frame formed by pressing or etching a metal plate, and is generally suitable for external leads. The outer leads are superposed on the conductive leads and conductive patterns, and soldering and ultrasonic bonding by the reflow method,
Although they are connected by means of thermocompression bonding, as shown in FIG. 6, the outer lead 2b and the conductive pattern 5a of the connection target 5 are connected to a connection target that is weak against heat and has low mechanical strength, such as a multi-lead liquid crystal display device. An anisotropic conductive adhesive 6 is inserted between the outer lead 2b and the anisotropic conductive adhesive 6, and the anisotropic conductive adhesive 6 and the conductive pattern 5a are pressure-bonded to each other to electrically It is compatible with fine pitch multi-lead connections. In this connection work, a predetermined area of the TAB tape 3 is cut by upper and lower molds to separate into individual TAB type semiconductor devices, and the anisotropic conductive adhesive 6 is cut across a large number of outer leads 2b on the insulating tape 1. The TAB semiconductor device is attached and pressure-bonded, the TAB semiconductor device is brought onto the connection target 5, and the outer lead 2b and the conductive pattern 5a of the connection target 5 are brought.
And are positioned via the anisotropic conductive adhesive 6 and are connected by thermocompression bonding. Here, the anisotropic conductive adhesive 6 is protected by attaching a release paper (not shown) so that the planned connection portion is not exposed, and the cutting process of the TAB tape 1 and the connection target 5 are connected. Since the process is usually separated from the process, the anisotropic conductive adhesive 5 attached to the TAB tape 1 moves while being protected by the release paper, and the release paper is removed immediately before being connected to the connection target 5. To be removed. This anisotropic conductive adhesive 6 is not only first attached to the TAB semiconductor device, but also attached to the connection target 5 in advance. (For example, Japanese Utility Model Publication No. 63-17149, Japanese Utility Model Publication No. 6)
(See Japanese Patent Publication No. 3-17150)

【発明が解決しようとする課題】 ところで、絶縁テー
プ１を切断して個々のＴＡＢ式半導体装置に分離する際
に上下金型のクリアランス、一方の金型に形成した切断
刃の切れ味などによって不可避的に絶縁テープ１の微細
片や導電パターン２の微細片からなる切削屑が発生し、
発生の度合や状態は金型の状態によって変化する。また
発生した切削屑は切断刃など金型の一部に付着し、絶縁
テープ１の後続する切断予定部の表裏面に付着すること
があった。このようにして、切削屑がＴＡＢ式半導体装
置のアウタリード２ｂ部分に付着すると、異方性導電接
着材６によって切削屑が固定され、前述のように切削屑
が絶縁性の場合には、導電パターン２ｂと異方性導電接
着材６の間の導通を阻止し断線状態とし、切削屑が導電
性の場合には導電パターン２ｂ間を短絡させ、いずれに
しても電気的接続を不良にする異物として作用するとい
う問題があった。そのため、切断金型に切削屑を吸引ま
たは吹き飛ばし除去する機構を設けたり、バフ処理によ
り切削屑を除去してＴＡＢ式半導体装置に異物が付着し
ないようにしているが完全に除去することは難しく、多
リード化により導電パターン２ｂの巾が微細となり間隔
も狭小となっているため微細な異物でも電気的接続状態
を損なう虞があった。By the way, when the insulating tape 1 is cut and separated into individual TAB type semiconductor devices, it is unavoidable due to the clearance between the upper and lower molds and the sharpness of the cutting blade formed in one mold. Cutting dust that consists of fine pieces of insulating tape 1 and fine pieces of conductive pattern 2
The degree of occurrence and the state change depending on the state of the mold. In addition, the generated cutting chips may adhere to a part of the mold such as a cutting blade, and may adhere to the front and back surfaces of a subsequent planned cutting portion of the insulating tape 1. In this way, when the cutting waste adheres to the outer lead 2b portion of the TAB semiconductor device, the cutting waste is fixed by the anisotropic conductive adhesive 6, and when the cutting waste is insulative as described above, the conductive pattern is formed. 2B and the anisotropic conductive adhesive 6 are prevented from being electrically connected to each other to cause a disconnection state, and when the cutting waste is conductive, the conductive patterns 2b are short-circuited, and in any case, as a foreign substance that causes a defective electrical connection. There was a problem of working. Therefore, the cutting die is provided with a mechanism for suctioning or blowing away the cutting chips, or buffing is performed to remove the cutting chips to prevent foreign matter from adhering to the TAB semiconductor device, but it is difficult to completely remove them. Due to the increase in the number of leads, the width of the conductive pattern 2b becomes finer and the interval becomes narrower, so that even a minute foreign substance may impair the electrical connection state.

【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、ＴＡＢテープの透孔内
に半導体ペレットを配置して半導体ペレット上の電極と
インナリードとを電気的に接続したＴＡＢ式半導体装置
中間構体のアウタリードと交差して異方性導電接着材を
貼り付ける工程と、ＴＡＢテープから半導体装置領域を
打ち抜き、個々の半導体装置に分離する工程と、分離さ
れたＴＡＢ式半導体装置の異方性導電接着材を外部回路
基板の所定の導電パターン領域に位置決めして貼り付け
る工程と、異方性導電接着材を加圧加熱してＴＡＢ式半
導体装置のアウタリードと外部回路基板の導電パターン
とを電気的に接続する工程とからなることを特徴とする
ＴＡＢ式半導体装置の実装方法を提供する。ＴＡＢテー
プから半導体装置領域を打ち抜き個々の半導体装置に分
離する際に、異方性導電接着材を導電パターンに押圧す
ることができる。The present invention has been proposed for the purpose of solving the above problems, in which a semiconductor pellet is placed in a through hole of a TAB tape to electrically connect an electrode on the semiconductor pellet and an inner lead. A step of attaching an anisotropic conductive adhesive material to the outer leads of the TAB type semiconductor device intermediate structure connected to the TAB type semiconductor device, a step of punching the semiconductor device region from the TAB tape to separate the semiconductor device regions into individual semiconductor devices, and Positioning and adhering the anisotropic conductive adhesive of the semiconductor device on a predetermined conductive pattern region of the external circuit board, and heating and heating the anisotropic conductive adhesive to outer leads and external circuit of the TAB semiconductor device. A method of mounting a TAB type semiconductor device, comprising the step of electrically connecting to a conductive pattern of a substrate. The anisotropic conductive adhesive can be pressed against the conductive pattern when the semiconductor device region is punched out from the TAB tape and separated into individual semiconductor devices.

【作用】本発明によれば、長尺のＴＡＢ式半導体装置中
間構体を個々のＴＡＢ式半導体装置に切断分離する際
に、導電パターン上に予め異方性導電接着材にて被覆保
護しているため導電パターンの切断時に生じる導電パタ
ーンや絶縁フィルムなどの切削屑による異物が導電パタ
ーン間や導電パターン上に付着して導電パターン間を短
絡したり、導電パターンと異方性導電接着材との間の接
続不良を生じない。According to the present invention, when the long TAB type semiconductor device intermediate structure is cut and separated into individual TAB type semiconductor devices, the conductive pattern is previously covered and protected by the anisotropic conductive adhesive. For this reason, foreign matter caused by cutting scraps such as conductive patterns and insulating films generated when the conductive patterns are cut adheres between the conductive patterns or on the conductive patterns to short-circuit the conductive patterns, or between the conductive patterns and the anisotropic conductive adhesive. Does not cause poor connection.

【実施例】以下に本発明の実施例を図１乃至図３から説
明する。本発明を説明するためのＴＡＢ式半導体装置中
間構体は図４に示す構造と同一であるため同一符号を付
し説明を省略する。図１において、７は長尺のＴＡＢテ
ープ３の表面に形成されたアウタリード２ｂ上の所定位
置に貼り付けられた異方性導電接着材で、８は異方性導
電接着材７の粘着面を保護する剥離紙を示す。また図２
における９、１０は上下一対の切断金型で、下金型９は
平面形状がＴＡＢテープ３から分離されるＴＡＢ式半導
体装置の外径形状に設定され、その上面の中央部に半導
体ペレット４を収容する凹部９ａが穿設されている。ま
た上金型１０は下面に内径形状が下金型９と嵌合する形
状の切断刃１０ａが固定されている。図３において、１
１は被接続物で、その表面にアウタリード２ｂとほぼ同
じ巾で同一間隔の多数本の導電パターン１１ａを形成し
ている。１２はヒートツールを示す。以下に本発明によ
るＴＡＢ式半導体装置の実装方法を説明する。先ず図１
に示すように長尺のＴＡＢ式半導体装置中間構体を水平
に移動させアウタリード２ｂ上に異方性導電接着材７を
貼り付ける。この時、異方性導電接着材７の接着面と反
対の露呈面は剥離紙８保護されている。次にこの中間構
体を図２に示すように切断工程に移動させ上下金型９、
１０間に位置決めさせる。そして上下金型を作動させて
ＴＡＢテープ３からＴＡＢ式半導体装置を打ち抜く。こ
のようにして個々に分離されたＴＡＢ式半導体装置は既
に異方性導電接着材７が接着されているため、その剥離
紙８を剥がして図３に示すようにアウタリード２ｂ形成
面を被接続物の導電パターン１１ａ形成面に対向させ異
方性導電接着材７を介してアウタリード２ｂと導電パタ
ーン１１ａを重合させて接着し、絶縁テープ１の上方か
らヒートツール１２にて加熱・加圧し異方性導電接着材
７に厚さ方向の導通性をもたせアウタリード２ｂと導電
パターン１１ａを電気的に接続させる。上記工程で、Ｔ
ＡＢ式半導体装置中間構体のアウタリード２ｂ部分はＴ
ＡＢテープ３の切断前に異方性導電接着材７にて被覆保
護されるため、ＴＡＢテープ３の切断により生じる絶縁
性及び導電性の異物がインナリード２ｂ上に付着するの
を防止できる。図２に示す工程で上金型１０にその降下
によって異方性導電接着材７を押圧するブロック（図示
せず）を設けることによって、ＴＡＢテープ３から半導
体装置領域を打ち抜き個々の半導体装置に分離する際
に、異方性導電接着材７を導電パターン（アウタリー
ド）２ａに押圧され切削屑からなる異物が異方性導電接
着材７とアウタリード２ｂの間に入り込むのを防止でき
る。ＴＡＢテープ３上の他の部分に付着した異物は吸引
又は吹き飛ばしにより容易に除去でき実装後のトラブル
を確実に回避できる。この場合、絶縁テープ１上の導電
パターン２のインナリード２ａとアウタリード２ｂの間
を被覆する絶縁樹脂（図示せず）と異方性導電接着材７
の色を切削屑すなわち絶縁テープ１及び導電パターン２
の色と明瞭に識別することのできる色に設定することに
より実装前に異物の付着の有無を確認でき、実装後異物
が被接続物上に剥落することにより生じるトラブルをよ
り確実に回避できる。尚、上記実施例では、異方性導電
接着材７は切断工程に先だってＴＡＢ式半導体装置中間
構体に貼り付けたが、切断金型の上金型１０の異方性導
電接着材７の貼付予定部と対向する部分に異方性導電接
着材７を供給する開口部を設け、ＴＡＢテープの切断と
連動して異方性導電接着材７の供給、貼り付け、圧着を
行わせてもよい。また、上記実施例の各工程は、時間
的、空間的に連続することが望ましいが、離隔しても差
し支えない。Embodiments of the present invention will be described below with reference to FIGS. 1 to 3. Since the TAB type semiconductor device intermediate structure for explaining the present invention is the same as the structure shown in FIG. 4, the same reference numerals are given and the description thereof will be omitted. In FIG. 1, reference numeral 7 denotes an anisotropic conductive adhesive material attached at a predetermined position on the outer lead 2b formed on the surface of the long TAB tape 3, and 8 denotes an adhesive surface of the anisotropic conductive adhesive material 7. The release paper to be protected is shown. See also FIG.
9 and 10 are a pair of upper and lower cutting dies, and the lower die 9 is set to have an outer diameter shape of the TAB type semiconductor device whose plane shape is separated from the TAB tape 3, and the semiconductor pellet 4 is placed at the center of the upper surface thereof. A recess 9a for accommodating is formed. Further, a cutting blade 10a having an inner diameter shape fitting with the lower mold 9 is fixed to the lower surface of the upper mold 10. In FIG. 3, 1
Reference numeral 1 is an object to be connected, on the surface of which a large number of conductive patterns 11a having substantially the same width as the outer leads 2b and having the same intervals are formed. Reference numeral 12 indicates a heat tool. A method of mounting the TAB type semiconductor device according to the present invention will be described below. First of all,
As shown in FIG. 5, the long TAB type semiconductor device intermediate structure is moved horizontally, and the anisotropic conductive adhesive 7 is attached on the outer leads 2b. At this time, the exposed surface of the anisotropic conductive adhesive 7 opposite to the adhesive surface is protected by the release paper 8. Next, this intermediate structure is moved to a cutting step as shown in FIG.
Position between 10 Then, the upper and lower molds are operated to punch out the TAB type semiconductor device from the TAB tape 3. Since the anisotropic conductive adhesive 7 is already adhered to the TAB type semiconductor devices thus individually separated, the release paper 8 is peeled off and the outer lead 2b forming surface is connected to the object to be connected as shown in FIG. The outer lead 2b and the conductive pattern 11a are polymerized and bonded via the anisotropic conductive adhesive 7 so as to face the surface on which the conductive pattern 11a is formed. The conductive adhesive 7 is provided with conductivity in the thickness direction to electrically connect the outer lead 2b and the conductive pattern 11a. In the above process, T
The outer lead 2b portion of the AB type semiconductor device intermediate structure is T
Since the anisotropic conductive adhesive 7 covers and protects the AB tape 3 before it is cut, it is possible to prevent the insulating and conductive foreign matter generated by the cutting of the TAB tape 3 from adhering to the inner leads 2b. In the step shown in FIG. 2, the upper die 10 is provided with a block (not shown) that presses the anisotropic conductive adhesive 7 by its lowering, whereby the semiconductor device region is punched out from the TAB tape 3 and separated into individual semiconductor devices. At this time, the anisotropic conductive adhesive 7 is prevented from being pressed by the conductive pattern (outer leads) 2a to prevent foreign matter consisting of cutting dust from entering between the anisotropic conductive adhesive 7 and the outer leads 2b. Foreign matter attached to other portions on the TAB tape 3 can be easily removed by suction or blowing, and troubles after mounting can be surely avoided. In this case, an insulating resin (not shown) covering the space between the inner leads 2a and the outer leads 2b of the conductive pattern 2 on the insulating tape 1 and the anisotropic conductive adhesive 7 are used.
The color of cutting dust, that is, insulating tape 1 and conductive pattern 2
By setting a color that can be clearly discriminated from the color of, the presence or absence of foreign matter can be confirmed before mounting, and the trouble caused by the foreign matter peeling off on the connected object after mounting can be more surely avoided. In the above embodiment, the anisotropic conductive adhesive 7 was attached to the TAB type semiconductor device intermediate structure prior to the cutting process, but the anisotropic conductive adhesive 7 of the upper die 10 of the cutting die is to be attached. An opening portion for supplying the anisotropic conductive adhesive material 7 may be provided in a portion facing the portion, and the anisotropic conductive adhesive material 7 may be supplied, attached, and pressure-bonded in association with the cutting of the TAB tape. Further, although it is desirable that the steps of the above-mentioned embodiment be temporally and spatially continuous, they may be separated from each other.

【発明の効果】以上のように本発明によれば、ＴＡＢ式
半導体装置を被接続物に異方性導電接着材を介して電気
的に接続する際に、長尺のＴＡＢ式半導体装置中間構体
から個々のＴＡＢ式半導体装置に分離する際に不可避的
に発生する切削屑によって生じる断線や短絡事故を確実
に防止することが出来る。As described above, according to the present invention, when a TAB semiconductor device is electrically connected to an object to be connected through an anisotropic conductive adhesive, a long TAB semiconductor device intermediate structure is formed. Therefore, it is possible to surely prevent a disconnection or a short-circuit accident caused by cutting chips which are inevitably generated when the TAB type semiconductor devices are separated from each other.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の実施例を示す工程でのＴＡＢ式半導
体装置中間構体を示す側断面図FIG. 1 is a side sectional view showing a TAB type semiconductor device intermediate structure in a step showing an embodiment of the present invention.

【図２】 本発明の実施例を示すＴＡＢ式半導体装置中
間構体を個々のＴＡＢ式半導体装置に分離する工程での
側断面図FIG. 2 is a side sectional view showing a step of separating the TAB type semiconductor device intermediate structure into individual TAB type semiconductor devices according to an embodiment of the present invention.

【図３】 本発明の実施例を示すＴＡＢ式半導体装置を
被接続物に接続する工程での要部側断面図FIG. 3 is a side sectional view of a main part in a step of connecting a TAB semiconductor device to an object to be connected, showing an embodiment of the present invention.

【図４】 ＴＡＢ式半導体装置中間構体の一例を示す斜
視図FIG. 4 is a perspective view showing an example of a TAB type semiconductor device intermediate structure.

【図５】 図１に示す半導体装置中間構体の側断面図5 is a side sectional view of the semiconductor device intermediate structure shown in FIG. 1;

【図６】 ＴＡＢ式半導体装置を被接続物に接続した状
態を示す要部側断面図FIG. 6 is a side sectional view of an essential part showing a state in which a TAB semiconductor device is connected to an object to be connected.

【符号の説明】[Explanation of symbols]

１ 絶縁テープ ２ 導電パターン ２ａ インナリード ２ｂ アウタリード ３ ＴＡＢテープ ４ 半導体ペレット ７ 異方性導電接着材 ９ 下金型 １０ 上金型 １１ 被接続物 １１ａ 導電パターン １２ ヒートツール 1 Insulation Tape 2 Conductive Pattern 2a Inner Lead 2b Outer Lead 3 TAB Tape 4 Semiconductor Pellet 7 Anisotropic Conductive Adhesive 9 Lower Mold 10 Upper Mold 11 Connected Object 11a Conductive Pattern 12 Heat Tool

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】所定の間隔で透孔を穿設した長尺の絶縁テ
ープに導電箔を積層しエッチングによりアウタリードと
透孔内に延在するインナリードを含む導電パターンを形
成したＴＡＢテープの透孔内に半導体ペレットを配置し
て半導体ペレット上の電極とインナリードとを電気的に
接続したＴＡＢ式半導体装置中間構体のアウタリードと
交差して異方性導電接着材を貼り付ける工程と、ＴＡＢ
テープから半導体装置領域を打ち抜き個々の半導体装置
に分離する工程と、分離されたＴＡＢ式半導体装置の異
方性導電接着材を被接続物の所定の導電パターン領域に
位置決めして貼り付ける工程と、異方性導電接着材を加
圧加熱してＴＡＢ式半導体装置のアウタリードと被接続
物の導電パターンとを電気的に接続する工程とからなる
ことを特徴とするＴＡＢ式半導体装置の実装方法。1. A transparent TAB tape in which a conductive foil is laminated on a long insulating tape having through holes formed at predetermined intervals and a conductive pattern including outer leads and inner leads extending into the through holes is formed by etching. A step of pasting an anisotropic conductive adhesive across the outer leads of the TAB type semiconductor device intermediate structure in which the semiconductor pellets are arranged in the holes and the electrodes on the semiconductor pellets and the inner leads are electrically connected;
Punching a semiconductor device region from the tape to separate the semiconductor devices into individual semiconductor devices; and positioning and attaching the anisotropic conductive adhesive of the separated TAB semiconductor device to a predetermined conductive pattern region of the connection target. A method of mounting a TAB type semiconductor device, comprising: heating the anisotropic conductive adhesive under pressure to electrically connect an outer lead of the TAB type semiconductor device and a conductive pattern of an object to be connected. 【請求項２】ＴＡＢテープから半導体装置領域を打ち抜
き個々の半導体装置に分離する際に、異方性導電接着材
を導電パターン上に押圧することをことを特徴とする請
求項１に記載のＴＡＢ式半導体装置の実装方法。2. The TAB according to claim 1, wherein an anisotropic conductive adhesive is pressed onto the conductive pattern when the semiconductor device region is punched out from the TAB tape and separated into individual semiconductor devices. Method of semiconductor type semiconductor device.
JP5840894A 1994-03-29 1994-03-29 Mounting method for tab semiconductor device Pending JPH07273145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5840894A JPH07273145A (en) 1994-03-29 1994-03-29 Mounting method for tab semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5840894A JPH07273145A (en) 1994-03-29 1994-03-29 Mounting method for tab semiconductor device

Publications (1)

Publication Number Publication Date
JPH07273145A true JPH07273145A (en) 1995-10-20

Family

ID=13083547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5840894A Pending JPH07273145A (en) 1994-03-29 1994-03-29 Mounting method for tab semiconductor device

Country Status (1)

Country Link
JP (1) JPH07273145A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997048259A1 (en) * 1996-06-12 1997-12-18 Matsushita Electric Industrial Co., Ltd. Method for mounting electronic parts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997048259A1 (en) * 1996-06-12 1997-12-18 Matsushita Electric Industrial Co., Ltd. Method for mounting electronic parts

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