JPH07272216A - Formation of terminal of thin-film magnetic head - Google Patents
Formation of terminal of thin-film magnetic headInfo
- Publication number
- JPH07272216A JPH07272216A JP6083854A JP8385494A JPH07272216A JP H07272216 A JPH07272216 A JP H07272216A JP 6083854 A JP6083854 A JP 6083854A JP 8385494 A JP8385494 A JP 8385494A JP H07272216 A JPH07272216 A JP H07272216A
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- resist
- terminal
- developer
- recess
- thickness
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜磁気ヘッドにリー
ド取り出し端子となる導体部を形成する方法に関し、更
に詳しく述べると、現像液に界面活性剤を添加するか、
あるいは現像の際に超音波振動を付与することにより、
パターン寸法が小さい垂直端子を歩留り良く形成する薄
膜磁気ヘッドの端子形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a conductor portion for a lead-out terminal in a thin film magnetic head. More specifically, it is necessary to add a surfactant to a developing solution,
Alternatively, by applying ultrasonic vibration during development,
The present invention relates to a terminal forming method for a thin film magnetic head for forming a vertical terminal having a small pattern size with high yield.
【０００２】[0002]
【従来の技術】ハードディスク用薄膜磁気ヘッドは、例
えば図４に要部の断面を示すように、スライダとなるセ
ラミックス基板５０上に設ける上下２層の磁性膜５２，
５４をギャップ膜５６で分離し、その間に磁界発生用及
び誘導電流ピックアップ用のコイル膜５８を形成する構
成となっている。実際には各層の間に絶縁膜などが入る
し、コイル膜も複数層に重ねて形成するために、ヘッド
本体部分全体としては、２０〜４０μｍ程度の厚さとな
る。そして最後に、その上を厚さ１０〜２０μｍ程度の
アルミナ保護膜６０などで覆って前記ヘッド本体部分を
保護している。2. Description of the Related Art A thin-film magnetic head for a hard disk includes, for example, as shown in the cross section of FIG.
54 is separated by a gap film 56, and a coil film 58 for magnetic field generation and induction current pickup is formed between them. In practice, an insulating film or the like is inserted between the layers, and the coil film is also formed in a plurality of layers, so that the entire head body has a thickness of about 20 to 40 μm. Finally, the head main body is protected by covering it with an alumina protective film 60 having a thickness of about 10 to 20 μm.
【０００３】前記コイル膜の端末には、外部回路との電
気的接続のためにリード取り出し端子を形成する必要が
ある。この端子は、その下部にてセラミックス基板上の
前記コイル膜に接続され、その上部は前記アルミナ保護
膜上で露出していなければならない。ヘッド本体部分の
高さにアルミナ保護膜の高さを加えると、最終製品では
３０〜６０μｍ程度となる。実際にはアルミナ保護膜を
最後に研磨するので、端子の高さとしては、それに見合
った分だけ、余計に高くしておく必要がある。しかも、
端子パターン形状は、薄膜磁気ヘッドの小形化にともな
って、ますます小さくなっており、狭い幅のパターンに
高い導体部を高精度で形成しなければならなくなってき
ている。At the end of the coil film, it is necessary to form a lead take-out terminal for electrical connection with an external circuit. This terminal must be connected to the coil film on the ceramic substrate at its lower part, and its upper part must be exposed on the alumina protective film. If the height of the alumina protective film is added to the height of the head body, the final product has a height of about 30 to 60 μm. In practice, since the alumina protective film is polished last, it is necessary to make the height of the terminal extra higher by an amount commensurate with it. Moreover,
The shape of the terminal pattern has become smaller and smaller with the miniaturization of the thin film magnetic head, and it has become necessary to highly accurately form a high conductor portion in a pattern having a narrow width.
【０００４】リード取り出し端子は、フォトリソグラフ
ィー法により形成している。端子パターンが大きい場合
には、レジスト膜厚を６０μｍ程度に厚くして、数回
（４回程度）の露光・現像を繰り返すことによってレジ
スト膜に該レジスト膜を貫通するように深い凹部を形成
し、メッキ法により導体部を成膜して端子とする。The lead-out terminals are formed by the photolithography method. When the terminal pattern is large, the resist film thickness is increased to about 60 μm, and exposure / development is repeated several times (about four times) to form a deep recess in the resist film so as to penetrate the resist film. The conductor portion is formed into a terminal by plating.
【０００５】[0005]
【発明が解決しようとする課題】最近、薄膜磁気ヘッド
の微細化に伴って、端子パターン寸法が、５０×１００
μｍといった小さなものも要求されている。しかし、端
子のパターン幅が１００μｍ未満にまで狭まると、上記
の方法では、深さ３０μｍ程度までは現像できても、６
０μｍを超えると全く現像できなくなってしまう。深さ
が３０〜６０μｍの領域は、現像できるものとできない
ものが生じ、たとえ製作できるにしても歩留りが非常に
悪くなる。つまり、端子パターン幅が広い場合は問題な
いが、狭くなると、レジスト深部まで現像することが困
難となり、その結果、幅が狭く且つ背の高い導体部を形
成することができない。Recently, with the miniaturization of thin-film magnetic heads, the size of terminal patterns has become 50 × 100.
A small one such as μm is also required. However, when the pattern width of the terminal is narrowed to less than 100 μm, even if the depth of about 30 μm can be developed by the above method,
If it exceeds 0 μm, development cannot be performed at all. In the region having a depth of 30 to 60 μm, some can be developed and some can not be developed, and even if they can be produced, the yield becomes very poor. That is, when the terminal pattern width is wide, there is no problem, but when the terminal pattern width is narrow, it becomes difficult to develop to the deep portion of the resist, and as a result, it is not possible to form a tall conductor portion having a narrow width.
【０００６】そこで図５に示すように、基板７０上に薄
く（厚さ５μｍ程度）レジスト７２を塗布し、端子パタ
ーンを有するマスク７４を載せて露光し、現像すること
により該レジスト膜を貫通する凹部７６を形成した後、
メッキ法によりレジストの膜厚を超えて所望の高さまで
導体部７８を成膜し、その後、レジスト７２を除去する
方法が考え出された。導体部７８の高さ（厚さ）は５０
〜６０μｍ程度は必要なので、図示のように、形成した
導体部７８はレジストを除去した時にはキノコ状とな
る。Therefore, as shown in FIG. 5, a thin (about 5 μm thick) resist 72 is applied on a substrate 70, a mask 74 having a terminal pattern is placed thereon, exposed, and developed to penetrate the resist film. After forming the recess 76,
A method has been devised in which the conductor portion 78 is formed by plating to a desired height beyond the film thickness of the resist, and then the resist 72 is removed. The height (thickness) of the conductor portion 78 is 50
Since about 60 μm is necessary, as shown in the figure, the formed conductor portion 78 becomes mushroom-shaped when the resist is removed.
【０００７】しかし、このような方法では、リード取り
出し端子がキノコ状となるために、端子寸法のばらつき
が大きく、またレジストを除去した後で形成するアルミ
ナ保護膜に異常部が生じる。即ち、端子寸法が露光マス
クに形成した端子パターンよりも大きくなり、ますます
微細化する薄膜磁気ヘッドにあって、端子を小さくする
ことが困難である。また膨らんだ上部のために、その下
方で影となる細い部分周辺で保護膜が形成され難くな
り、端子の機械的強度が弱くなる。However, in such a method, the lead take-out terminal has a mushroom shape, so that there is a large variation in terminal size, and an abnormal portion occurs in the alumina protective film formed after the resist is removed. That is, the terminal size becomes larger than the terminal pattern formed on the exposure mask, and it is difficult to make the terminal small in the thinning thin film magnetic head. Further, because of the bulged upper part, it becomes difficult to form the protective film around the thin portion which is a shadow therebelow, and the mechanical strength of the terminal is weakened.
【０００８】本発明の目的は、端子パターンが小さくて
も、厚いレジストの深部まで該レジストを貫通するよう
に完全に除去でき、そのためメッキ法により成膜する導
体部をキノコ状にする必要がなく、真っ直ぐに上方に延
びたリード取り出し端子を形成できる方法を提供するこ
とである。An object of the present invention is that even if the terminal pattern is small, the resist can be completely removed to penetrate deep into a thick resist, so that it is not necessary to make the conductor portion to be formed into a mushroom by plating. It is to provide a method capable of forming a lead lead-out terminal that extends straight upward.
【０００９】[0009]
【課題を解決するための手段】本発明は、基板上に厚く
レジストを塗布し、フォトリソグラフィー法を複数回繰
り返すことにより、該レジストを貫通するように縦断面
ほぼ矩形状の凹部を形成して、その凹部内にメッキ法に
よりリード取り出し端子となる導体部を形成する方法で
ある。本発明では、塗布するレジストの膜厚をｈ、凹部
の幅をａとした時、ｈ／ａ≧０．６，ａ≦９０μｍであ
り、且つｈ＞３０μｍの場合に、レジスト上面から深さ
３０μｍよりも深い部分を現像する際に、界面活性剤を
添加した現像液を用いる。あるいは、通常の現像液を使
用し、該現像液に超音波振動を与える。勿論、両者を組
み合わせて、界面活性剤を添加した現像液を用い、該現
像液に超音波振動を与える方法でもよい。According to the present invention, a thick resist is applied on a substrate, and a photolithography method is repeated a plurality of times to form a recess having a substantially rectangular cross section through the resist. This is a method of forming a conductor portion to be a lead take-out terminal in the recess by plating. In the present invention, where h / a ≧ 0.6 and a ≦ 90 μm, where h is the thickness of the resist to be applied and the width of the recess is a, and when h> 30 μm, the depth from the resist upper surface is 30 μm. When developing a deeper portion, a developer containing a surfactant is used. Alternatively, a normal developing solution is used and ultrasonic vibration is applied to the developing solution. Of course, a method in which both are combined and a surfactant-added developer is used and ultrasonic vibration is applied to the developer may be used.
【００１０】ここでレジストの膜厚ｈは、通常、５０μ
ｍ≦ｈ≦８０μｍ程度である。本発明において、ｈ／ａ
≧０．６，ａ≦９０μｍであり、且つｈ＞３０μｍとし
たのは、実験結果に基づくものであって、本発明が有効
な範囲を明確にするためである。即ち、レジスト膜厚ｈ
が、パターン幅ａの０．６倍以上であって、パターン幅
ａが９０μｍ以下、レジスト膜厚が３０μｍを超える深
さの場合に、本発明方法によって綺麗な垂直端子を形成
できる。The film thickness h of the resist is usually 50 μm.
It is about m ≦ h ≦ 80 μm. In the present invention, h / a
The reason why ≧ 0.6, a ≦ 90 μm and h> 30 μm is based on experimental results, and is to clarify the effective range of the present invention. That is, the resist film thickness h
However, when the pattern width a is 0.6 times or more, the pattern width a is 90 μm or less, and the resist film thickness is more than 30 μm, a beautiful vertical terminal can be formed by the method of the present invention.
【００１１】[0011]
【作用】リード取り出し端子のパターン幅が狭くなるに
つれて、厚いレジスト膜を底部まで現像することができ
ない原因は、現像液の表面張力のために、現像液がレジ
ストに形成されつつある凹部の底部まで入り難くなるか
らである。具体的には、端子パターン幅が１００μｍ未
満の場合に、レジストの深さが３０μｍを超えると、現
像液が入り難くなり、６０μｍを超えると、現像液は全
く入らなくなる。しかし、現像液中に界面活性剤を適量
混入すると、３０μｍを超える深さについても容易に現
像液が入りこんで隅々まで現像できるようになり、所望
の縦断面矩形状の凹部を、レジスト膜を貫通するように
形成できる。また、現像工程において現像液に超音波振
動を付与すると、それによって現像液が細かく振動して
狭い凹部内に入り込み、底部まで完全に現像することが
できる。As the pattern width of the lead take-out terminal becomes narrower, the reason why the thick resist film cannot be developed to the bottom is because the surface tension of the developer causes the developer to reach the bottom of the recess that is being formed in the resist. Because it will be difficult to enter. Specifically, in the case where the width of the terminal pattern is less than 100 μm, if the resist depth exceeds 30 μm, it becomes difficult for the developer to enter, and if it exceeds 60 μm, the developer does not enter at all. However, when a suitable amount of a surfactant is mixed in the developing solution, the developing solution can easily enter even at a depth of more than 30 μm and can be developed to every corner. It can be formed so as to penetrate therethrough. Further, when ultrasonic vibration is applied to the developing solution in the developing step, the developing solution vibrates finely to enter the narrow concave portion, and complete development can be performed up to the bottom.
【００１２】[0012]
【実施例】図１は本発明方法の一実施例を示す工程説明
図であり、界面活性剤入り現像剤を用いる例である。ま
ず、基板１０上に、厚さ６０μｍのレジスト１２を形成
する。そのために、４回にわたって、レジストの塗布・
乾燥を繰り返す。次にリード取り出し端子パターンを有
するマスク１４を載せて露光し、ポジ型レジストに通常
用いられているアルカリ現像液（ＫＯＨ水溶液：ｐＨ１
３程度）を用いて現像して、前記端子パターン部分に凹
部１６を形成する。この操作を２回繰り返して、深さ３
０μｍまで現像する（露光・現像及び）。FIG. 1 is a process explanatory view showing an embodiment of the method of the present invention, which is an example of using a developer containing a surfactant. First, a resist 12 having a thickness of 60 μm is formed on the substrate 10. Therefore, the resist application and
Repeat drying. Next, a mask 14 having a lead-out terminal pattern is placed and exposed to light, and an alkaline developer (KOH aqueous solution: pH 1) usually used for a positive type resist is exposed.
3) to develop the concave portions 16 in the terminal pattern portion. This operation is repeated twice, and the depth is 3
Develop to 0 μm (exposure and development).
【００１３】そして更にリード取り出し部のパターンを
有するマスク１４を載せて露光し、レジスト上面から深
さ３０μｍよりも深い部分は、界面活性剤入りのアルカ
リ現像液を用いて現像する。ここでは、上記ポジ型レジ
ストに通常用いられているアルカリ現像液１８リットル
中に、界面活性剤としてｎ−ドデシル硫酸ナトリウム
（１０重量％水溶液）を５〜１０ミリリットル加え、よ
く攪拌したものを用いている。この露光・現像操作を２
回繰り返して、レジスト膜を貫通するように、その底部
まで現像して、縦断面ほぼ矩形状の凹部１６を形成でき
る（露光・現像及び）。Further, a mask 14 having a pattern of a lead take-out portion is placed and exposed, and a portion deeper than 30 μm in depth from the upper surface of the resist is developed using an alkaline developer containing a surfactant. Here, 5 to 10 ml of sodium n-dodecylsulfate (10% by weight aqueous solution) as a surfactant was added to 18 liters of an alkaline developer which is usually used for the above positive resist and stirred well. There is. This exposure and development operation is 2
By repeating this process, the bottom of the resist film can be developed so as to penetrate the resist film to form the recess 16 having a substantially rectangular vertical section (exposure and development).
【００１４】次に、銅メッキを施して凹部１６にリード
取り出し端子となる導体部１８を、厚さ５０μｍ程度
（レジスト膜の厚さ６０μｍよりもやや薄い）まで成膜
し、その後、レジストを除去する。実際の薄膜磁気ヘッ
ドの製造工程では、更にこのような基板の上にアルミナ
保護膜等を成膜し、表面研磨する工程が続く。Next, copper is plated to form a conductor portion 18 serving as a lead take-out terminal in the recess 16 up to a thickness of about 50 μm (slightly thinner than the resist film thickness of 60 μm), and then the resist is removed. To do. In the actual manufacturing process of a thin film magnetic head, a process of further forming an alumina protective film or the like on such a substrate and polishing the surface continues.
【００１５】この操作によって、厚さ６０μｍのレジス
ト膜の底部まで綺麗に現像され、縦断面ほぼ矩形状の深
さ６０μｍの凹部を形成することができ、キノコ状に膨
らまずに基板面に垂直にストレートに延びるリード取り
出し端子を形成することが可能となる。By this operation, the bottom portion of the resist film having a thickness of 60 μm can be developed neatly to form a concave portion having a depth of 60 μm and having a substantially rectangular vertical section, and the concave portion does not expand like a mushroom and is perpendicular to the substrate surface. It is possible to form a lead take-out terminal that extends straight.
【００１６】図２は本発明の他の実施例を示す工程説明
図であり、現像の際に超音波振動を付与する例である。
基板１０上に、厚さ６０μｍのレジスト膜１２を形成す
る。そして、前記実施例と同様に、この操作を２回繰り
返して、深さ３０μｍまで現像する。FIG. 2 is a process explanatory view showing another embodiment of the present invention, which is an example in which ultrasonic vibration is applied during development.
A resist film 12 having a thickness of 60 μm is formed on the substrate 10. Then, similarly to the above-described embodiment, this operation is repeated twice to develop to a depth of 30 μm.
【００１７】その後、リード取り出し部のパターンを有
するマスク１４を載せて露光し、レジスト上面から深さ
３０μｍよりも深い部分は、現像液に超音波振動を与え
つつ現像する。ここでは図３に示すような装置で実施し
た。超音波洗浄機３０内に水３２を入れ、その中に現像
容器３４を設置する。現像容器３４内には現像液３６を
入れておく。基板３８をピンセット４０で把持して現像
液３６中に浸漬し、超音波振動を付与して現像を行う。
現像液は、ポジ型レジストに通常用いられているアルカ
リ現像液でよい。この露光・現像操作を２回繰り返すこ
とにより、レジスト膜の底部まで綺麗に現像し、縦断面
ほぼ矩形状の凹部１８を形成できる。そのため、キノコ
状に膨らまずに基板面に垂直にストレートに延びるリー
ド取り出し端子を形成することが可能となる。Thereafter, a mask 14 having a pattern of the lead take-out portion is placed and exposed, and a portion deeper than 30 μm in depth from the upper surface of the resist is developed while applying ultrasonic vibration to the developing solution. Here, an apparatus as shown in FIG. 3 was used. Water 32 is put in the ultrasonic cleaner 30, and a developing container 34 is installed therein. The developing solution 36 is stored in the developing container 34. The substrate 38 is held by the tweezers 40 and immersed in the developing solution 36, and ultrasonic vibration is applied to develop the substrate 38.
The developing solution may be an alkaline developing solution usually used for positive resists. By repeating this exposure / development operation twice, the bottom portion of the resist film can be developed neatly and the concave portion 18 having a substantially rectangular longitudinal section can be formed. Therefore, it is possible to form a lead take-out terminal that does not bulge into a mushroom shape and extends straight and perpendicularly to the substrate surface.
【００１８】次に、種々の端子パターン条件で端子形成
を試みた結果について述べる。レジスト膜厚ｈを６０μ
ｍで一定とし、細長状の種々の端子パターン寸法（幅ａ
と長さｂ）について露光・現像操作によりレジスト膜の
底部まで綺麗に現像できるか否かを実験した。現像液と
しては、ｐＨが１３程度のＫＯＨ水溶液を用いた。結果
を表１に示す。表中、〇印は歩留り９９％以上を示し、
×印は歩留り９９％未満を示す。Next, the results of attempts to form terminals under various terminal pattern conditions will be described. Resist film thickness h is 60μ
m is constant, and various elongated terminal pattern dimensions (width a
With respect to the length b), an experiment was conducted to determine whether or not the bottom portion of the resist film could be developed neatly by the exposure / development operation. An aqueous KOH solution having a pH of about 13 was used as the developing solution. The results are shown in Table 1. In the table, ○ indicates a yield of 99% or more,
The cross indicates a yield of less than 99%.
【００１９】[0019]
【表１】 [Table 1]
【００２０】従来方法では、幅ａが９０μｍ以下の場合
（ｈ／ａ≧０．６）には、歩留りが悪くなり、特に幅が
５０μｍにもなるとレジスト膜底部まで現像できない。
それに対して本発明方法Ａ及びＢは、ともに幅５０μｍ
でも９９％以上の歩留りでレジスト膜底部まで綺麗な縦
断面ほぼ矩形状の凹部を形成することができる。なお幅
ａが１００μｍの場合、本発明方法Ａ及びＢでは空欄と
なっているが、これは従来方法でも実施可能なため、あ
えて本発明のような方法を採用する必要が無いことを示
している。In the conventional method, when the width a is 90 μm or less (h / a ≧ 0.6), the yield is poor, and especially when the width is 50 μm, it is not possible to develop to the bottom of the resist film.
On the other hand, both the methods A and B of the present invention have a width of 50 μm.
However, with a yield of 99% or more, it is possible to form a recess having a substantially rectangular vertical section up to the bottom of the resist film. It should be noted that when the width a is 100 μm, it is blank in the methods A and B of the present invention, but since this can be implemented by the conventional method, it indicates that it is not necessary to adopt the method of the present invention. .
【００２１】上記実施例において、超音波振動を付与す
る第２の実施例の場合、通常の現像剤を用いているが、
第１の実施例と同様、界面活性剤入りの現像剤を用い
て、それに超音波振動を付与する方法でもよいことは言
うまでもない。In the above embodiment, in the case of the second embodiment in which ultrasonic vibration is applied, a normal developer is used.
It goes without saying that a method of applying ultrasonic vibration to a developer containing a surfactant may be used as in the first embodiment.
【００２２】[0022]
【発明の効果】本発明は上記のように、現像液に界面活
性剤を混入するか、もしくは超音波振動を付与しつつ現
像する方法であるから、レジスト膜が厚く且つ端子パタ
ーン寸法が狭くなっても、現像液が十分にレジスト凹部
の深部まで行きわたり、現像できる。そのため、狭い端
子パターンであっても、キノコ状ではなく、綺麗に垂直
方向にストレートに延びる形状の端子を、歩留り良く形
成でき、薄膜磁気ヘッドをより一層小形化することが可
能となる。As described above, the present invention is a method in which a developing solution is mixed with a surfactant or is developed while applying ultrasonic vibration. Therefore, the resist film is thick and the terminal pattern size is narrow. However, the developer can be sufficiently spread to the deep part of the resist concave portion and can be developed. Therefore, even if the terminal pattern is narrow, it is possible to form a terminal that is not mushroom-shaped but extends neatly in a straight line in the vertical direction with a good yield, and it is possible to further miniaturize the thin-film magnetic head.
【図１】本発明に係る端子形成方法の一実施例を示す工
程説明図。FIG. 1 is a process explanatory view showing an embodiment of a terminal forming method according to the present invention.
【図２】本発明に係る端子形成方法の他の実施例を示す
工程説明図。FIG. 2 is a process explanatory view showing another embodiment of the terminal forming method according to the present invention.
【図３】本発明で用いる現像装置の一例を示す説明図。FIG. 3 is an explanatory view showing an example of a developing device used in the present invention.
【図４】薄膜磁気ヘッドの要部の拡大断面図。FIG. 4 is an enlarged cross-sectional view of a main part of a thin film magnetic head.
【図５】従来方法の一例を示す工程説明図。FIG. 5 is a process explanatory view showing an example of a conventional method.
１０ 基板 １２ レジスト膜 １４ マスク １６ 凹部 １８ 導体部 10 substrate 12 resist film 14 mask 16 concave portion 18 conductor portion
Claims (3)
グラフィー法を複数回繰り返すことにより、該レジスト
を貫通するように縦断面ほぼ矩形状の凹部を形成し、そ
の凹部内にメッキ法によりリード取り出し端子となる導
体部を形成する方法において、塗布するレジストの膜厚
をｈ、凹部の幅をａとした時、ｈ／ａ≧０．６，ａ≦９
０μｍであり、且つｈ＞３０μｍの場合に、レジスト上
面から深さ３０μｍよりも深い部分を現像する際に、界
面活性剤を添加した現像液を用いることを特徴とする薄
膜磁気ヘッドの端子形成方法。1. A resist is applied onto a substrate, and a photolithography method is repeated a plurality of times to form a recess having a substantially rectangular vertical section so as to penetrate the resist, and leads are taken out by plating in the recess. In the method of forming the conductor portion to be the terminal, h / a ≧ 0.6, a ≦ 9, where h is the thickness of the applied resist and a is the width of the recess.
A method for forming a terminal of a thin film magnetic head, characterized in that when 0 μm and h> 30 μm, a developing solution containing a surfactant is used when developing a portion deeper than 30 μm in depth from the upper surface of the resist. .
グラフィー法を複数回繰り返すことにより、該レジスト
を貫通するように縦断面ほぼ矩形状の凹部を形成し、そ
の凹部内にメッキ法によりリード取り出し端子となる導
体部を形成する方法において、塗布するレジストの膜厚
をｈ、凹部の幅をａとした時、ｈ／ａ≧０．６，ａ≦９
０μｍであり、且つｈ＞３０μｍの場合に、レジスト上
面から深さ３０μｍよりも深い部分を現像する際に、現
像液に超音波振動を付与しつつ行うことを特徴とする薄
膜磁気ヘッドの端子形成方法。2. A resist is applied on a substrate, and a photolithography method is repeated a plurality of times to form a recess having a substantially rectangular vertical section so as to penetrate the resist, and leads are taken out by plating in the recess. In the method of forming the conductor portion to be the terminal, h / a ≧ 0.6, a ≦ 9, where h is the thickness of the applied resist and a is the width of the recess.
When 0 μm and h> 30 μm, when developing a portion deeper than 30 μm in depth from the upper surface of the resist, it is carried out while applying ultrasonic vibration to the developing solution, forming a terminal of a thin film magnetic head. Method.
０μｍである請求項１又は２記載の方法。3. The resist film thickness h is 50 μm ≦ h ≦ 8.
The method according to claim 1 or 2, wherein the thickness is 0 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8385494A JP2800091B2 (en) | 1994-03-30 | 1994-03-30 | Terminal forming method for thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8385494A JP2800091B2 (en) | 1994-03-30 | 1994-03-30 | Terminal forming method for thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07272216A true JPH07272216A (en) | 1995-10-20 |
| JP2800091B2 JP2800091B2 (en) | 1998-09-21 |
Family
ID=13814285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8385494A Expired - Fee Related JP2800091B2 (en) | 1994-03-30 | 1994-03-30 | Terminal forming method for thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2800091B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7459097B2 (en) | 2006-03-24 | 2008-12-02 | Fujitsu Limited | Method of forming a conductive pattern |
| JP2018112674A (en) * | 2017-01-12 | 2018-07-19 | 株式会社ニコン | Pattern formation method |
-
1994
- 1994-03-30 JP JP8385494A patent/JP2800091B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7459097B2 (en) | 2006-03-24 | 2008-12-02 | Fujitsu Limited | Method of forming a conductive pattern |
| JP2018112674A (en) * | 2017-01-12 | 2018-07-19 | 株式会社ニコン | Pattern formation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2800091B2 (en) | 1998-09-21 |
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