JPH0726378A - Film forming substrate holding device in film forming device - Google Patents
Film forming substrate holding device in film forming deviceInfo
- Publication number
- JPH0726378A JPH0726378A JP17196493A JP17196493A JPH0726378A JP H0726378 A JPH0726378 A JP H0726378A JP 17196493 A JP17196493 A JP 17196493A JP 17196493 A JP17196493 A JP 17196493A JP H0726378 A JPH0726378 A JP H0726378A
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- rotation
- film
- base body
- holding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は切削工具、金型、磁気ヘ
ッド或いは各種の摺動部材といった耐摩耗性能等が要求
される部品の基体に目的とする膜を形成したり、各種電
気、電子部品の基体上に配線用の前駆膜や半導体膜等を
形成するための成膜装置における被成膜基体の保持装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is intended to form a desired film on a substrate of a component such as a cutting tool, a mold, a magnetic head or various sliding members which is required to have wear resistance, and various electric and electronic materials. The present invention relates to a device for holding a film-forming substrate in a film-forming device for forming a wiring precursor film, a semiconductor film, or the like on a substrate of a component.
【０００２】[0002]
【従来の技術】前述した成膜装置、中でも真空蒸着成
膜、スパッタリング成膜、これら手法とイオン照射アシ
ストを組み合わせた成膜等を行う物理的蒸着（ＰＶＤ）
成膜装置においては、複数の被成膜基体に同時成膜を行
う場合、各基体への膜の付き回り性を改善すること、換
言すれば、各基体の膜厚を均一化することが大きい課題
となっている。2. Description of the Related Art Physical vapor deposition (PVD) for performing the above-mentioned film forming apparatus, in particular, vacuum evaporation film forming, sputtering film forming, and film forming combining these methods with ion irradiation assistance.
In a film forming apparatus, when performing simultaneous film formation on a plurality of film-forming bases, it is important to improve the throwing power of the film to each base, in other words, to make the film thickness of each base uniform. It has become a challenge.
【０００３】このことをさらに説明するため、まず、こ
の種の成膜装置の１例を図４を参照して説明する。図４
の装置は真空蒸着による成膜装置を示し、成膜室となる
真空容器１０内に蒸発源２０が設置されている。被成膜
基体Ｓはホルダ３０に取り付けられ、支持される。蒸発
源２０には目的とする膜の構成元素を含む物質２０ａが
収納され、高周波加熱、電子ビーム加熱等により加熱さ
れ、蒸発し、蒸発粒子２０ｂが基体Ｓの被成膜面に付着
し、それによって目的とする膜が形成される。In order to further explain this, an example of this type of film forming apparatus will be described first with reference to FIG. Figure 4
The apparatus of (1) shows a film forming apparatus by vacuum vapor deposition, and an evaporation source 20 is installed in a vacuum container 10 serving as a film forming chamber. The film formation substrate S is attached to and supported by the holder 30. A substance 20a containing a constituent element of a target film is housed in the evaporation source 20 and is heated by high frequency heating, electron beam heating or the like to evaporate, and evaporated particles 20b adhere to the film formation surface of the substrate S. A desired film is formed by.
【０００４】この成膜装置においては、蒸発粒子２０ｂ
は、一般には図示のとおり、ＣＯＳ n θの分布で基体Ｓ
に蒸着する。このため、図５に示すように、基体ホルダ
３００に基体Ｓを複数設置して成膜する場合、蒸発源２
０の真上方に保持された基体Ｓと、蒸発源２０より一定
角度離れた位置に保持された基体Ｓとでは、成膜される
膜厚が不均一になる傾向がある。In this film forming apparatus, the evaporated particles 20b
Is generally COS as shown. nThe distribution of θ gives the substrate S
Vapor deposition. Therefore, as shown in FIG.
When a plurality of substrates S are installed on 300 to form a film, the evaporation source 2
Constant from the evaporation source 20 and the substrate S held right above 0
A film is formed with the substrate S held at a position separated by an angle.
The film thickness tends to be non-uniform.
【０００５】このような問題を解決するため、これま
で、複数の基体Ｓを支持するホルダ３００と蒸発源２０
との距離を長く設定したり、各基体Ｓを一定中心周りに
公転させつつ自転させる自公転機構を有するホルダを採
用することが試みられている。In order to solve such a problem, a holder 300 supporting a plurality of substrates S and an evaporation source 20 have been heretofore used.
Attempts have been made to set a long distance between and and to employ a holder having a self-revolving mechanism that revolves each base body S while revolving around a certain center.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、基体ホ
ルダと蒸発源との距離を長く設定すると、成膜速度が低
下し、生産性が劣る結果となってしまう。また、自公転
機構を採用する場合、それは通常複雑な機構となるの
で、装置コストが上昇するという問題がある。特に近年
盛んに試みられているイオン照射と真空蒸着を併用した
イオン蒸着薄膜形成法（以下「ＩＶＤ法」という。）に
よる成膜にあっては、照射されるイオンビームの分布の
均一性と蒸発物質の蒸着分布の均一性の両方を確保する
ような機構の基体ホルダが要求されるが、その場合、真
空蒸着法のみによって膜が形成される場合に比べて、基
板ホルダの構造はより複雑になってしまう。さらに、基
体への熱的な損傷を低減するために、低温下での膜形成
が要求される場合、基体ホルダは水冷機構を備えている
ことが望ましいが、その場合は、より一層基体ホルダの
構造が複雑になるのが実状である。これらの結果、装置
コストが大幅に上昇する。However, if the distance between the substrate holder and the evaporation source is set to be long, the film forming rate will decrease, resulting in poor productivity. In addition, when a self-revolving mechanism is adopted, it is usually a complicated mechanism, and there is a problem that the device cost increases. Especially, in the film formation by the ion deposition thin film forming method (hereinafter referred to as “IVD method”) that uses ion irradiation and vacuum deposition, which has been actively attempted in recent years, the uniformity of the distribution of the irradiated ion beam and the evaporation A substrate holder having a mechanism that ensures both the uniformity of the vapor deposition distribution of the substance is required. In that case, the structure of the substrate holder is more complicated than when the film is formed only by the vacuum vapor deposition method. turn into. Further, in order to reduce thermal damage to the substrate, it is desirable that the substrate holder be equipped with a water cooling mechanism when film formation at low temperature is required. The reality is that the structure becomes complicated. As a result of these, the device cost is significantly increased.
【０００７】そこで本発明は、以上説明したように本発
明によると、成膜装置における被成膜基体保持装置であ
って、複数の基体に同時成膜する場合において、それら
基体に形成される膜の膜厚を基体間において均一化で
き、しかも効率よく成膜できる構造簡単で安価に済む被
成膜基体保持装置を提供することを課題とする。Therefore, according to the present invention, as described above, according to the present invention, there is provided a film-forming substrate holding device for a film-forming substrate, and in the case of simultaneously forming films on a plurality of substrates, the film formed on those substrates. An object of the present invention is to provide an apparatus for holding a film-forming substrate, which can make the film thickness of the film uniform among the substrates and can efficiently form a film with a simple structure and at low cost.
【０００８】[0008]
【課題を解決するための手段】前記課題を解決する本発
明の基体保持装置は、成膜装置における成膜室内に配置
され、主軸を中心に回転可能の主回転部材と、被成膜基
体を保持する部材であってそれぞれが前記主回転部材に
回転可能に且つ該主回転部材の回動に伴って前記主軸の
周りに公転可能に支持された複数の基体保持部材と、前
記主回転部材の回動に伴って前記各基体保持部材を一定
角度自転させるための自転ガイド機構とを備えている。A substrate holding device according to the present invention which solves the above-mentioned problems includes a main rotating member which is arranged in a film forming chamber of a film forming apparatus and is rotatable about a main axis, and a film forming substrate. A plurality of substrate holding members which are members for holding and are rotatably supported by the main rotating member and revolvable around the main shaft in association with the rotation of the main rotating member; A rotation guide mechanism for rotating each of the base body holding members by a predetermined angle in association with the rotation.
【０００９】前記自転ガイド機構としては、代表的に
は、 前記基体保持部材のうち予め定めた基体保持部材上の
自転用係合部と、前記基体保持部材の公転軌道に臨み、
該保持部材の公転に伴って前記自転用係合部に係合し、
それを有する基体保持部材を一定角度回動させつつその
通過を許す駆動部と、前記自転用係合部を有しない基体
保持部材を該自転用係合部を有する基体保持部材の回動
に連動せて一定角度自転させるための連動機構とを含ん
でいるもの、及び 前記各基体保持部材上の自転用係合部と、前記基体保
持部材の公転軌道に臨み、該保持部材の公転に伴って前
記自転用係合部に係合し、それを有する基体保持部材を
一定角度回動させつつその通過を許す駆動部とを含んで
いるものを挙げることができる。As the rotation guide mechanism, typically, a rotation engaging portion on a predetermined base holding member of the base holding member and a revolving orbit of the base holding member are faced.
Engages with the rotation engaging portion along with the revolution of the holding member,
A drive portion that allows the passage of the base body holding member having it while allowing it to pass therethrough, and a base body holding member that does not have the rotation engaging portion are interlocked with the rotation of the base body holding member that has the rotation engaging portion. Including an interlocking mechanism for rotating by a certain angle, and a rotation engaging portion on each of the base body holding members, and a revolving track of the base body holding member, and with the revolution of the holding member. An example is a drive unit that engages with the rotation engaging portion and allows the base body holding member having the rotation engaging portion to pass through while rotating by a certain angle.
【００１０】前記に記載の自転ガイド機構の場合、自
転用係合部を有する基体保持部材の数は一つでもよい
し、それ以上でもよい。また、駆動部の数も、自転用係
合部を有する基体保持部材に対しそれぞれ設けられてい
てもよいし、自転用係合部を有する基体保持部材の全部
に共通に使用される一つの駆動部でもよいし、かかる保
持部材の一部に共通に使用される駆動部が設けられてい
てもよく、特に限定はない。また、基体保持部材間の連
動機構も、基体保持部材に設けたレバーやアーム、歯車
等が互いに係合連動するようにしたもの、その他簡素な
ものを採用すればよい。In the case of the rotation guide mechanism described above, the number of the base body holding members having the rotation engaging portions may be one or more. Further, the number of driving portions may be provided for each of the base body holding members having the rotation engaging portions, or one drive commonly used for all the base body holding members having the rotation engaging portions. It may be a part or a part of such a holding member may be provided with a driving part commonly used, and there is no particular limitation. Further, as the interlocking mechanism between the base body holding members, a lever, an arm, a gear, etc. provided on the base body holding member may be engaged and interlocked with each other, or other simple mechanism may be adopted.
【００１１】前記、のいずれの自転ガイド機構にお
いても、自転用係合部とこれに対する駆動部の組み合わ
せとしては、基体保持部材に設けられたレバー、アーム
等の突出部材とこれに係合当接できる駆動用のレバー、
アーム、ブロック状部材等の組み合わせ、基体保持部材
の外周側面等とこれが転動接触できるガイドロッド、レ
ール等の部材の組み合わせ、基体保持部材に同心に設け
た歯車とこれが噛み合い回転できるラックの組み合わせ
など、適当なものを採用できる。In any of the above-described rotation guide mechanisms, the combination of the rotation engaging portion and the driving portion therefor is, as a combination of the protruding member such as a lever or arm provided on the base body holding member, and the engaging contact therewith. Lever for driving,
Combination of arms, block-shaped members, etc., combination of outer peripheral side surface of the base body holding member, etc. and members such as guide rods, rails, etc. with which it can make rolling contact, combination of gears concentrically provided on the base body holding member and racks capable of meshing rotation with them. , Suitable one can be adopted.
【００１２】また、いずれにしても、前記主回転部材に
対しては、それ自身を冷却し、それによって基体保持部
材及びそれに支持される基体を冷却できる水冷機構を設
けてもよい。In any case, the main rotating member may be provided with a water cooling mechanism capable of cooling itself and thereby cooling the substrate holding member and the substrate supported thereby.
【００１３】[0013]
【作用】本発明基体保持装置は、成膜装置の蒸発源等に
対し、膜生産が効率良く実施される距離乃至位置に配置
され、基体保持部材に被成膜基体が取り付けられる。成
膜処理中、主回転部材は別途準備される駆動部により例
えば定速回転し、それに伴って主回転部材に設けられた
基体保持部材及びそれに支持された基体が主回転部材の
主軸周りに公転する。また、各基体保持部材の公転に伴
い、自転ガイド機構が作用して、該保持部材及びそれに
支持された基体が一定角度ずつ自転する。The substrate holding apparatus of the present invention is arranged at a distance or position where film production can be efficiently performed with respect to the evaporation source of the film forming apparatus, and the film forming substrate is attached to the substrate holding member. During the film forming process, the main rotating member is rotated at a constant speed, for example, by a separately prepared driving unit, and the substrate holding member provided on the main rotating member and the substrate supported thereby are revolved around the main axis of the main rotating member. To do. Further, with the revolution of each substrate holding member, the rotation guide mechanism acts, and the holding member and the substrate supported thereby rotate about a fixed angle.
【００１４】かくして、複数の基体保持部材に支持され
た複数の基体に同時成膜が生産効率良くなされ、しかも
複数の基体間において、形成される膜の厚さが均一化さ
れる。特に本発明基体保持装置をＩＶＤ法による成膜装
置に用いると、各基体へのイオンビーム照射の均一性及
び蒸発物質の蒸着の均一性の双方を容易に確保できる。Thus, simultaneous film formation can be performed efficiently on a plurality of substrates supported by a plurality of substrate holding members, and the thickness of the film formed can be made uniform between the plurality of substrates. In particular, when the substrate holding apparatus of the present invention is used in a film forming apparatus by the IVD method, it is possible to easily ensure both the uniformity of ion beam irradiation and the uniformity of vapor deposition of vaporized substances on each substrate.
【００１５】[0015]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明の１実施例を採用したＩＶＤ法よる
成膜装置の概略構成を示している。図２は図１に示す基
体保持装置の底面図である。図１に示す成膜装置は、成
膜室としての真空容器１を備え、該容器１内には蒸発源
２及びその上方の本発明に係る被成膜基体Ｓの保持装置
３が設定されている。また、蒸発源２の側方にはイオン
源４が設置され、保持装置３に向けられている。容器１
には、さらに、その中を所定の成膜真空度とするめたの
排気装置５が接続されいてる。保持装置３は、主回転円
盤３１、円盤３１に支持された小円板の形態の複数の基
体保持部材３２を備えている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic structure of a film forming apparatus by the IVD method adopting one embodiment of the present invention. 2 is a bottom view of the substrate holding device shown in FIG. The film forming apparatus shown in FIG. 1 includes a vacuum container 1 as a film forming chamber, in which an evaporation source 2 and a holding device 3 for a film forming substrate S according to the present invention above the evaporation source 2 are set. There is. An ion source 4 is installed on the side of the evaporation source 2 and is directed to the holding device 3. Container 1
Further, an evacuation device 5 having a predetermined film formation vacuum degree is connected to the. The holding device 3 includes a main rotating disk 31 and a plurality of substrate holding members 32 in the form of small disks supported by the disk 31.
【００１６】主円盤３１はその中心部が主軸３１１に固
定され、支持されており、主軸３１１は容器１の天井壁
１１に設けた軸受部３１２に回転可能に支持されて容器
１外へ突出している。主軸３１１の該突出部は伝動機構
Ｔを介して所定回転数を与え得るモータＭに連結されて
いる。また、主軸３１１と天井壁１１との間には気密シ
ール用のオーリング１２を嵌めてある。The central portion of the main disk 31 is fixed to and supported by a main shaft 311, and the main shaft 311 is rotatably supported by a bearing portion 312 provided on the ceiling wall 11 of the container 1 and protrudes outside the container 1. There is. The protrusion of the main shaft 311 is connected to a motor M capable of giving a predetermined rotation speed via a transmission mechanism T. An O-ring 12 for airtight sealing is fitted between the main shaft 311 and the ceiling wall 11.
【００１７】各基体保持部材３２は、その中心部が軸棒
３２１に固定、支持されている。該軸棒３２１は円盤３
１の周縁から円盤中心部へ向け形成した軸棒引っ掛け用
のフック形状凹所３２２の一番奥まった位置に昇降可能
に、且つ、回転可能に、さらに凹所３２２に沿って着脱
可能に通されている。各軸棒３２１は円盤３１の上方へ
若干突出しており、上端にヘッド部材３２１ａを有し、
この部材と円盤３１上面との間にコイルスプリング３２
３を介装してある。The central portion of each substrate holding member 32 is fixed and supported by the shaft rod 321. The shaft rod 321 is a disk 3
1. A hook-shaped recess 322 for hooking a shaft rod formed from the peripheral edge of 1 toward the center of the disk can be moved up and down, rotatably, and detachably inserted along the recess 322. ing. Each shaft rod 321 slightly protrudes above the disc 31, has a head member 321a at the upper end,
A coil spring 32 is provided between this member and the upper surface of the disc 31.
3 is interposed.
【００１８】かくして、各基体保持部材３２は円盤３１
の下面に取り外し可能に、等間隔で、且つ、円盤３１の
回転に伴って主軸３１１の周りに公転するように支持さ
れている。また、各保持部材３２は、その軸棒を３２１
を中心に自転可能に、且つ、コイルスプリング３２３の
作用で部材３２上面が円盤３１下面に摺動回転可能に接
している。Thus, each substrate holding member 32 has a disk 31.
It is detachably supported at its lower surface at regular intervals and revolves around the main shaft 311 as the disk 31 rotates. In addition, each holding member 32 has its shaft bar 321
The upper surface of the member 32 is in sliding contact with the lower surface of the disk 31 by the action of the coil spring 323.
【００１９】なお、各基体保持部材３２を円盤３１に対
し着脱するための機構は、前記フック形状凹所３２２に
限定されるものではなく、他の形の凹所やさらに他の手
段によるものでもよい。また、主回転円盤３１に対して
は水冷機構３１３を設けてある。水冷機構３１３は主軸
３１１内及び円盤３１内を通る、図中破線で示す水通路
を含み、この水通路は図示しないロータリジョイントを
介して図示しない冷却水供給循環装置に接続される。The mechanism for attaching / detaching each substrate holding member 32 to / from the disc 31 is not limited to the hook-shaped recess 322, but may be a recess of another shape or another means. Good. A water cooling mechanism 313 is provided for the main rotating disk 31. The water cooling mechanism 313 includes a water passage shown by a broken line in the drawing, which passes through the main shaft 311 and the disk 31, and this water passage is connected to a cooling water supply / circulation device (not shown) via a rotary joint (not shown).
【００２０】円盤３１は必要に応じ、冷却水の供給循環
にて冷却されてクーラとして、しかも基体保持部材３２
に対し冷却容量の大きいクーラとして作用し、円盤３１
下面に接する保持部材３２及びそれに支持される被成膜
基体Ｓを成膜に適する温度に冷却できる。さらに、基体
保持部材３２に対しては、自転ガイド機構３３を設けて
ある。この機構３３は、一つの保持部材３２（３２ａ）
の側周縁に、中心角にして９０°間隔で４本突設した自
転用係合アーム３３１と、保持部材３２の公転軌道に臨
む定位置に設置した駆動アーム３３２とを含んでいる。
また、他の基体保持部材３２にはそれぞれその側周縁
に、中心角にして９０°間隔で４本、係合レバー３３３
を突設してある。前記自転用係合アーム３３１とこれら
係合レバー３３３は、自転用係合アーム３３１を有する
保持部材３２（３２ａ）が駆動アーム３３２に到来し、
係合当接することで該保持部材が一定角度回動する毎
に、互いに係合連動して他の保持部材３２も一定角度回
動させる連動機構Ａを構成している。この連動機構Ａも
自転ガイド機構３３の一部を構成している。なお、各自
転用係合アーム３３１は駆動アーム３３２及び係合レバ
ー３３３より背高く形成されており、駆動アーム３３２
は、係合レバー３３３より高い位置にずらせて配置して
ある。そして、係合アーム３３１と駆動アーム３３２と
の係合はアーム３３１の上半部を用いて行われ、係合ア
ーム３３１と係合レバー３３３との係合はアーム３３１
の下半部を用いて行われ、かくして駆動アーム３３２と
係合レバー３３３との衝突を防止するようになってい
る。The disk 31 is cooled by supply circulation of cooling water as a cooler, if necessary, and the substrate holding member 32 is used.
It acts as a cooler with a large cooling capacity against the disk 31
The holding member 32 in contact with the lower surface and the film-forming substrate S supported by the holding member 32 can be cooled to a temperature suitable for film formation. Further, a rotation guide mechanism 33 is provided for the base body holding member 32. This mechanism 33 has one holding member 32 (32a)
On the side peripheral edge of the above, four rotation engaging arms 331 protruding at a center angle of 90 ° and a drive arm 332 installed at a fixed position facing the orbit of the holding member 32 are included.
Further, each of the other base body holding members 32 has four engaging levers 333 on its side peripheral edge at a central angle of 90 °.
Is projected. Regarding the rotation engaging arm 331 and these engagement levers 333, the holding member 32 (32a) having the rotation engaging arm 331 arrives at the drive arm 332.
Each time the holding member rotates by a certain angle by engaging and abutting, an interlocking mechanism A that interlocks with each other and rotates the other holding member 32 by a certain angle is configured. This interlocking mechanism A also constitutes a part of the rotation guide mechanism 33. Each rotation engaging arm 331 is formed to be taller than the drive arm 332 and the engagement lever 333.
Are arranged in a position higher than the engaging lever 333. The engagement arm 331 and the drive arm 332 are engaged with each other by using the upper half of the arm 331, and the engagement arm 331 and the engagement lever 333 are engaged with each other.
The lower half part is used to prevent a collision between the drive arm 332 and the engagement lever 333.
【００２１】この自転ガイド機構３３によると、図２に
示すように、円盤３１が下方から見て図中ＣＣＷ方向に
回転されることにより、係合アーム３３１を有する基体
保持部材３２ａが定位置に固定の駆動アーム３３２に臨
む位置に到来する毎に該保持部材３２ａ上の１本の自転
用係合アーム３３１が該駆動アーム３３２に当接係合
し、該アーム３３２に押されて一定角度回動し、これに
伴って保持部材３２ａ本体及びそれに支持された基体Ｓ
も一定角度回動しつつ駆動アーム３３２から離れて公転
を続ける。さらに、連動機構Ａの作用で、この基体保持
部材３２ａの回動に連動して他の基体保持部材３２も一
定角度回動する。According to this rotation guide mechanism 33, as shown in FIG. 2, the disk 31 is rotated in the CCW direction in the figure when viewed from below, so that the base body holding member 32a having the engaging arm 331 is brought into a fixed position. Every time when it reaches the position facing the fixed drive arm 332, one rotation engaging arm 331 on the holding member 32a abuts and engages with the drive arm 332 and is pushed by the arm 332 to rotate at a constant angle. The holding member 32a body and the base body S supported by the holding member 32a.
Also keeps revolving away from the drive arm 332 while rotating by a certain angle. Further, by the action of the interlocking mechanism A, the other base body holding members 32 also rotate by a certain angle in association with the rotation of the base body holding member 32a.
【００２２】このようにして円盤３１の回転に伴い、各
基体保持部材３２は主軸３１１の周りに公転するととも
に、自転用係合アーム３３１を有する保持部材が駆動ア
ーム３３２に到来する毎に（本例では円盤３１の１回転
毎に）一定角度ずつ自転する。以上説明した被成膜基体
保持装置によると、これが真空容器１内に、蒸発源２に
対し所望の、生産効率の良い成膜速度が得られる距離を
隔てて配置され、各基体保持部材３２に被成膜基体Ｓが
取り付けられるとともに、保持部材３２自体はその軸棒
３２１が主回転部材３１の周縁からフック形状凹所３２
２に沿ってその一番奥位置まで嵌められ、脱落しないよ
うに、且つ、主回転部材３１に対し回転可能に配置され
る。In this way, as the disc 31 rotates, each base body holding member 32 revolves around the main shaft 311, and each time the holding member having the rotation engaging arm 331 arrives at the drive arm 332. In the example, the disk 31 rotates by a constant angle (for each rotation of the disk 31). According to the deposition target substrate holding apparatus described above, the deposition target substrate holding unit is arranged in the vacuum container 1 at a distance from the evaporation source 2 at which a desired deposition rate with high production efficiency can be obtained. While the film-forming substrate S is attached, the shaft 321 of the holding member 32 itself has a hook-shaped recess 32 from the peripheral edge of the main rotating member 31.
It is fitted to the innermost position along the line 2, and is arranged so as not to fall off and rotatable with respect to the main rotating member 31.
【００２３】かくして成膜準備が整うと、真空容器１内
が排気装置５にて所定成膜真空度に維持されつつ、蒸発
源２から目的とする膜の構成元素を含む物質２ａが気化
され、その粒子２ｂが各基体Ｓに蒸着せしめられる。ま
た、この蒸着と同時、交互又は該蒸着後に、イオン源４
から各基体へ向けイオンビーム４ａが照射される。When the preparation for film formation is completed in this way, the substance 2a containing the constituent elements of the desired film is vaporized from the evaporation source 2 while the inside of the vacuum container 1 is maintained at a predetermined film formation vacuum degree by the exhaust device 5. The particles 2b are vapor-deposited on each substrate S. Further, at the same time as this vapor deposition, alternately or after the vapor deposition, the ion source 4
Is irradiated with the ion beam 4a toward each substrate.
【００２４】さらに、この成膜処理中、モータＭの駆動
にて主回転部材３１が主軸３１１を中心に回転し、この
１回転ごとに、各保持部材３２及びそれに支持された基
体Ｓが一定角度ずつ自転する。このように、各基体Ｓが
自公転することで、各基体Ｓに対するイオンビーム照射
及び蒸発物質の蒸着が均一化され、基体間において膜厚
や膜質が均一化された所望特性の膜が各基体上に効率良
く形成される。Further, during the film forming process, the main rotating member 31 is rotated about the main shaft 311 by driving the motor M, and each holding member 32 and the substrate S supported by the holding member 32 are rotated by a constant angle. Rotate one by one. In this way, each substrate S revolves around its axis, so that the irradiation of the ion beam and the vapor deposition of the evaporation material on each substrate S are made uniform, and the films having desired characteristics in which the film thickness and the film quality are made uniform between the substrates. Efficiently formed on top.
【００２５】また、この基体保持装置によると、成膜処
理において、水冷機構３１３により主回転部材３１を冷
却し、それを基体保持部材３２に対する大面積クーラと
して作用せしめ、各基体保持部材３２及びそれに支持さ
れた基体Ｓを効率良く冷却することができ、それによっ
て、基体の熱的損傷、基体の特性の劣化等を防止でき
る。また、このため、基体として用いることのできる材
質の幅が広がる。Further, according to this substrate holding device, in the film forming process, the main rotating member 31 is cooled by the water cooling mechanism 313, and it is made to act as a large area cooler for the substrate holding member 32. The supported substrate S can be cooled efficiently, which can prevent thermal damage to the substrate and deterioration of the characteristics of the substrate. Further, this widens the range of materials that can be used as the base.
【００２６】また、以上説明した基体保持装置は、基体
の自公転機構が簡単な構造であり、水冷機構３１３も直
接的には主回転部材３１に対し設けてあるので、複数基
板を冷却できる割にはその構造は簡素化でき、これらの
ことから安価に提供することができ、延いてはそれだけ
成膜コストを抑制できる。なお、本発明は前記実施例に
限定されるのものではなく、他にも種々の態様で実施で
きる。例えば、自転ガイド機構として図３に一部を示す
機構３４のように、自転用係合部として各基体保持部材
３２の外周側面３４１を利用し、自転用係合部を駆動す
る駆動部として該外周側面３４１が転動接触できる駆動
係合部材３４２を採用し、該部材３４２を保持部材３２
の公転軌道に臨ませて９０°間隔で配置し、これによっ
て、主回転円盤３１が１／４回転する毎に各保持部材３
２及びそれに支持される基体Ｓが一定角度ずつ回動する
もの等も考えられる。In addition, in the substrate holding device described above, the rotation and revolution mechanism of the substrate is simple, and since the water cooling mechanism 313 is also provided directly to the main rotating member 31, it is possible to cool a plurality of substrates. The structure can be simplified, and because of these reasons, the structure can be provided at low cost, and the film forming cost can be suppressed accordingly. The present invention is not limited to the above embodiment, but can be implemented in various other modes. For example, like a mechanism 34 partially shown in FIG. 3 as a rotation guide mechanism, the outer peripheral side surface 341 of each base body holding member 32 is used as a rotation engagement portion, and as a drive portion for driving the rotation engagement portion. A drive engagement member 342 that can make rolling contact with the outer peripheral side surface 341 is adopted, and the member 342 is held by the holding member 32.
The holding members 3 are arranged at 90 ° intervals so as to face the revolution orbit of each of the holding members 3 every time the main rotating disk 31 makes 1/4 rotation.
It is also conceivable that the two and the base body S supported by the two rotate by a constant angle.
【００２７】また、本発明装置を用いることができる成
膜装置はＩＶＤ法によるものに限定されず、例えばクラ
スターイオン蒸着装置、スパッタリング装置、イオンプ
ーティング装置等にも用いることができる。次に図１に
示すタイプの成膜装置及び以上説明した自転ガイド機構
３３を有する基体保持装置３による具体的な成膜例及び
比較例を説明する。 〔保持装置３による成膜例〕 主回転部材３１：直径１００ｍｍ、回転数１２０ｒ．
ｐ．ｍ 基体保持部材３２：直径４０ｍｍ、４個 等間隔配置 被成膜基体Ｓ：直径３８ｍｍ、シリコン基板 蒸発源２：アルミニウムを電子ビーム加熱 主回転部材３１と蒸発源２との距離：６００ｍｍ、蒸発
源２は主軸３１１の真下位置 イオン源４：主回転部材３１に立てた法線と照射するイ
オンビームのなす角度αが０°より大きい成膜条件によ
り１ｎｍ／ｓｅｃのＡｌ蒸発速度で各基板に１μｍ蒸着
させる予定で成膜した。 〔比較例〕基体保持部材３２を取り外し、それがあった
位置において、主回転部材３１に直接基体Ｓを取り付
け、該部材を１２０ｒ．ｐ．ｍで回動させ、他は上記成
膜例と同条件とし、１ｎｍ／ｓｅｃの蒸発速度により１
μｍ蒸着させる予定で成膜した。Further, the film forming apparatus in which the apparatus of the present invention can be used is not limited to the IVD method, but can be used in, for example, a cluster ion vapor deposition apparatus, a sputtering apparatus, an ion pooling apparatus and the like. Next, specific film forming examples and comparative examples by the film forming apparatus of the type shown in FIG. 1 and the substrate holding device 3 having the above-described rotation guide mechanism 33 will be described. [Example of film formation by holding device 3] Main rotating member 31: diameter 100 mm, rotation speed 120 r.
p. m Substrate holding member 32: 40 mm in diameter, 4 pieces are arranged at equal intervals Substrate to be film-formed S: Diameter 38 mm, silicon substrate Evaporation source 2: Aluminum is electron beam heated Distance between main rotating member 31 and evaporation source 2: 600 mm, evaporation source 2 is a position directly below the main shaft 311. Ion source 4: 1 μm on each substrate at an Al evaporation rate of 1 nm / sec under a film forming condition in which an angle α formed by a normal line to the main rotating member 31 and an ion beam for irradiation is larger than 0 °. The film was formed by vapor deposition. [Comparative Example] The substrate holding member 32 was removed, and at the position where it was located, the substrate S was directly attached to the main rotating member 31. p. Rotate at m, the other conditions are the same as those of the above film formation example, and the evaporation rate is 1 nm / sec.
A film was formed with a plan to vapor-deposit it by μm.
【００２８】本発明に係る成膜例と比較例によって得ら
れた膜の膜厚分布をエリプソメータによって測定したと
ころ、本発明に係る成膜例によるものは４枚の基板共に
±５％の均一性で成膜されていたが、比較例のものは４
枚の基板共に±１５％の均一性しか得られなかった。The film thickness distributions of the films obtained by the film forming example according to the present invention and the comparative example were measured by an ellipsometer. The film forming example according to the present invention showed a uniformity of ± 5% for all four substrates. Although the film was formed in 4
Only ± 15% uniformity was obtained on each of the substrates.
【００２９】[0029]
【発明の効果】以上説明したように本発明によると、成
膜装置における被成膜基体保持装置であって、複数の基
体に同時成膜する場合において、それら基体に形成され
る膜の膜厚を基体間において均一化でき、しかも効率よ
く成膜できる構造簡単で安価に済む被成膜基体保持装置
を提供することができる。As described above, according to the present invention, in the apparatus for holding a film-forming substrate in a film-forming apparatus, in the case of simultaneously forming films on a plurality of substrates, the film thickness of the film formed on those substrates. It is possible to provide a substrate for holding a film-forming substrate which has a simple structure and is capable of uniforming the film thickness between the substrates, and has a simple structure.
【図１】本発明の１実施例基体保持装置を採用した成膜
装置の１例の概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of an example of a film forming apparatus adopting a substrate holding apparatus according to an example of the present invention.
【図２】図１に示す基体保持装置の底面図である。FIG. 2 is a bottom view of the substrate holding device shown in FIG.
【図３】本発明の他の実施例の一部の概略底面図であ
る。FIG. 3 is a schematic bottom view of a portion of another embodiment of the present invention.
【図４】成膜装置の従来例の概略構成を示す図である。FIG. 4 is a diagram showing a schematic configuration of a conventional example of a film forming apparatus.
【図５】図４に示す装置において複数基体へ同時成膜す
る例の説明図である。5 is an explanatory view of an example of simultaneous film formation on a plurality of substrates in the apparatus shown in FIG.
１ 真空容器 １１ 容器１の天井壁 １２ オーリング ２ 蒸発源 ２ａ 蒸発源物質 ２ｂ 蒸発粒子 ３ 基体保持装置 ３１ 主回転円盤（主回転部材） ３１１ 円盤３１の主軸 ３１２ 軸受部 ３１３ 水冷機構 Ｔ 伝動機構 Ｍ モータ ３２、３２ａ 基体保持部材 ３２１ 部材３２の軸棒 ３２１ａ ヘッド部材 ３２２ フック形状凹所 ３２３ コイルスプリング ３３ 自転ガイド機構 ３３１ 自転用係合アーム（自転用係合部） ３３２ 駆動アーム（駆動部） Ａ 連動機構 ３３３ 係合レバー ３４ 他の自転ガイド機構 ３４１ 基体保持部材の外周側面（自転用係合部） ３４２ 駆動係合部材（駆動部） ４ イオン源 ４ａ イオンビーム ５ 排気装置 DESCRIPTION OF SYMBOLS 1 Vacuum container 11 Ceiling wall of container 1 O-ring 2 Evaporation source 2a Evaporation source substance 2b Evaporation particle 3 Substrate holding device 31 Main rotating disk (main rotating member) 311 Main shaft of disk 31 312 Bearing part 313 Water cooling mechanism T Transmission mechanism M Motors 32, 32a Base member holding member 321 Shaft rod of member 32 321a Head member 322 Hook-shaped recess 323 Coil spring 33 Rotation guide mechanism 331 Rotation engagement arm (rotation engagement portion) 332 Drive arm (drive portion) A interlocking Mechanism 333 Engagement lever 34 Other rotation guide mechanism 341 Outer peripheral side surface of base body holding member (rotational engagement part) 342 Drive engagement member (drive part) 4 Ion source 4a Ion beam 5 Exhaust device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 緒方 潔 京都市右京区梅津高畝町47番地 日新電機 株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Kiyoshi Ogata 47 Umezu Takaunecho, Ukyo-ku, Kyoto Nissin Electric Co., Ltd.
Claims (3)
主軸を中心に回転可能の主回転部材と、被成膜基体を保
持する部材であってそれぞれが前記主回転部材に回転可
能に且つ該主回転部材の回動に伴って前記主軸の周りに
公転可能に支持された複数の基体保持部材と、前記主回
転部材の回動に伴って前記各基体保持部材を一定角度自
転させるための自転ガイド機構とを備え、前記自転ガイ
ド機構は、前記基体保持部材のうち予め定めた基体保持
部材上の自転用係合部と、前記基体保持部材の公転軌道
に臨み、該保持部材の公転に伴って前記自転用係合部に
係合し、それを有する基体保持部材を一定角度回動させ
つつその通過を許す駆動部と、前記自転用係合部を有し
ない基体保持部材を該自転用係合部を有する基体保持部
材の回動に連動せて一定角度自転させるための連動機構
とを含んでいることを特徴とする成膜装置における被成
膜基体保持装置。1. A film forming apparatus is arranged in a film forming chamber,
A main rotating member that is rotatable around the main shaft and a member that holds the film-forming substrate, each of which is rotatable about the main rotating member and revolves around the main shaft as the main rotating member rotates. A plurality of base body holding members supported so as to be possible, and a rotation guide mechanism for rotating each of the base body holding members by a predetermined angle as the main rotation member rotates, wherein the rotation guide mechanism includes the base body holding member. Among the members, a predetermined rotation engaging portion on the base body holding member and a revolution track of the base body holding member are faced, and the rotation engagement portion is engaged with the revolution of the holding member, and has A drive unit that allows the base body holding member to rotate through a certain angle while allowing it to pass therethrough, and a base body holding member that does not have the rotation engaging portion are fixed in association with the rotation of the base body holding member that has the rotation engaging portion. It includes an interlocking mechanism for rotating the angle of rotation. Film-forming substrate holding device in a film forming apparatus according to claim.
主軸を中心に回転可能の主回転部材と、被成膜基体を保
持する部材であってそれぞれが前記主回転部材に回転可
能に且つ該主回転部材の回動に伴って前記主軸の周りに
公転可能に支持された複数の基体保持部材と、前記主回
転部材の回動に伴って前記各基体保持部材を一定角度自
転させるための自転ガイド機構とを備え、前記自転ガイ
ド機構は、前記各基体保持部材上の自転用係合部と、前
記基体保持部材の公転軌道に臨み、該保持部材の公転に
伴って前記自転用係合部に係合し、それを有する基体保
持部材を一定角度回動させつつその通過を許す駆動部と
を含んでいることを特徴とする成膜装置における被成膜
基体保持装置。2. Arranged in a film forming chamber of the film forming apparatus,
A main rotating member that is rotatable around the main shaft and a member that holds the film-forming substrate, each of which is rotatable about the main rotating member and revolves around the main shaft as the main rotating member rotates. And a rotation guide mechanism for rotating each of the base body holding members by a predetermined angle as the main rotation member rotates. The rotation engaging portion on the holding member faces the revolution trajectory of the base body holding member, and engages with the rotation engaging portion as the holding member revolves. A film forming substrate holding apparatus in a film forming apparatus, comprising: a driving unit that allows the passage while moving.
れている請求項１又は２記載の被成膜基体の保持装置。3. The apparatus for holding a film-forming substrate according to claim 1, wherein a water cooling mechanism is provided for the main rotating member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17196493A JPH0726378A (en) | 1993-07-13 | 1993-07-13 | Film forming substrate holding device in film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17196493A JPH0726378A (en) | 1993-07-13 | 1993-07-13 | Film forming substrate holding device in film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0726378A true JPH0726378A (en) | 1995-01-27 |
Family
ID=15933028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17196493A Withdrawn JPH0726378A (en) | 1993-07-13 | 1993-07-13 | Film forming substrate holding device in film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0726378A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6616816B2 (en) | 2000-08-01 | 2003-09-09 | Anelva Corporation | Substrate processing device and method |
| WO2009011730A1 (en) * | 2007-07-19 | 2009-01-22 | Sunpower Corporation | Cluster tool with a linear source |
| WO2019210135A1 (en) * | 2018-04-28 | 2019-10-31 | Applied Materials, Inc. | In-situ wafer rotation for carousel processing chambers |
| KR102257211B1 (en) | 2020-04-14 | 2021-05-26 | 가부시키가이샤 메이유우 | Interdental brush |
-
1993
- 1993-07-13 JP JP17196493A patent/JPH0726378A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6616816B2 (en) | 2000-08-01 | 2003-09-09 | Anelva Corporation | Substrate processing device and method |
| WO2009011730A1 (en) * | 2007-07-19 | 2009-01-22 | Sunpower Corporation | Cluster tool with a linear source |
| WO2019210135A1 (en) * | 2018-04-28 | 2019-10-31 | Applied Materials, Inc. | In-situ wafer rotation for carousel processing chambers |
| US11798825B2 (en) | 2018-04-28 | 2023-10-24 | Applied Materials, Inc. | In-situ wafer rotation for carousel processing chambers |
| KR102257211B1 (en) | 2020-04-14 | 2021-05-26 | 가부시키가이샤 메이유우 | Interdental brush |
| US11185398B2 (en) | 2020-04-14 | 2021-11-30 | Meilleur Co. Ltd | Interdental brush |
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