JPH07263337A - Developing method - Google Patents
Developing methodInfo
- Publication number
- JPH07263337A JPH07263337A JP1140195A JP1140195A JPH07263337A JP H07263337 A JPH07263337 A JP H07263337A JP 1140195 A JP1140195 A JP 1140195A JP 1140195 A JP1140195 A JP 1140195A JP H07263337 A JPH07263337 A JP H07263337A
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- JP
- Japan
- Prior art keywords
- substrate
- processed
- developing
- exhaust
- rotation speed
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハ等の被処
理基板の現像方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for developing a substrate to be processed such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】一般に、半導体ウエハ等の被処理基板の
現像処理を行なう現像装置では、表面にフォトレジスト
等の感光性膜が形成された被処理基板が配置される処理
室と、この処理室内から排気する手段と、被処理基板と
現像液とを所定の現像時間の間接触させ、感光性膜に所
定の化学変化を生じさせて現像を行なう手段とを備えて
いる。2. Description of the Related Art Generally, in a developing apparatus for developing a substrate to be processed such as a semiconductor wafer, a processing chamber in which a substrate to be processed having a photosensitive film such as a photoresist is formed, And means for bringing the substrate to be processed into contact with the developing solution for a predetermined development time to cause a predetermined chemical change in the photosensitive film to perform development.
【０００３】そして、処理室内に配置された載置台上に
半導体ウエハ等の被処理基板を配置して、現像液、純水
等のリンス液を順次スプレ―ノズル等から被処理基板に
供給して、現像を行なう。また、現像液は、通常人体に
対して悪影響を及ぼすものが多いため、スプレ―等によ
ってこの現像液が飛散しないように、処理中は、常に10
〜20mmＨ2 Ｏ程度の排気量で排気装置等により処理室内
からの排気が行なわれている。Then, a substrate to be processed such as a semiconductor wafer is arranged on a mounting table arranged in the processing chamber, and a rinse liquid such as a developing solution and pure water is sequentially supplied to the substrate to be processed from a spray nozzle or the like. , Develop. In addition, since the developer usually has a bad effect on the human body, the developer should be kept at 10% during processing to prevent the developer from scattering due to spraying.
Exhaust from the processing chamber is performed by an exhaust device or the like with an exhaust amount of about 20 mmH 2 O.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
従来の現像装置を用いた現像方法では、特に被処理基板
が大型化すると、被処理基板面内で、現像状態が不均一
となり、例えば精密写真技術を用いて、半導体ウエハ上
に微細パタ―ンを形成する場合等では、半導体ウエハ面
に形成される線幅等が不均一になるという問題があっ
た。However, in the developing method using the above-described conventional developing device, when the size of the substrate to be processed becomes large, the developing state becomes non-uniform within the surface of the substrate to be processed. When a fine pattern is formed on a semiconductor wafer by using the technique, there is a problem that the line width and the like formed on the surface of the semiconductor wafer become non-uniform.
【０００５】本発明は、かかる従来の事情に対処してな
されたもので、大型の被処理基板でも面内の現像状態が
均一となるように現像処理を行なうことができ、半導体
ウエハ上に微細パタ―ンを形成する場合でも、半導体ウ
エハ面に形成される線幅等を均一化することのできる現
像方法を提供しようとするものである。The present invention has been made in response to such a conventional situation. Even a large substrate to be processed can be developed so that the in-plane development state becomes uniform, and fine processing is performed on a semiconductor wafer. An object of the present invention is to provide a developing method capable of making uniform the line width and the like formed on the surface of a semiconductor wafer even when forming a pattern.
【０００６】[0006]
【課題を解決するための手段】第１の発明は、表面に感
光性膜が形成された被処理基板が配置される処理室内
を、第１の排気量で排気しつつ、回転テーブルに保持さ
れた前記被処理基板を第１の回転速度で回転させながら
現像液を前記被処理基板表面に供給する工程と、前記現
像液の供給を停止するとともに前記回転テーブルを停止
させ、前記処理室内の排気を前記被処理基板の現像処理
の均一性が所望の範囲となる第２の排気量にまで減少さ
せ、前記被処理基板を前記被処理基板表面に供給した前
記現像液で現像する工程と、前記処理室内の排気量を前
記第１の排気量に増加させると共に、前記回転テーブル
を前記第１の回転速度より速い第２の回転速度で回転さ
せつつ、前記被処理基板表面にリンス液を供給する工程
と、前記リンス液の供給を停止した後、前記回転テーブ
ルを前記第２の回転速度より速い第３の回転速度で回転
させ、前記被処理基板表面を乾燥させる工程とを有する
ことを特徴とする。According to a first aspect of the present invention, a processing chamber in which a substrate to be processed having a photosensitive film formed on its surface is placed is held by a rotary table while being exhausted at a first exhaust amount. And supplying the developing solution to the surface of the substrate to be processed while rotating the substrate to be processed at a first rotation speed, and stopping the supply of the developing solution and stopping the rotary table to exhaust the inside of the processing chamber. Is reduced to a second exhaust amount in which the uniformity of the development processing of the substrate to be processed becomes a desired range, and the substrate to be processed is developed with the developer supplied to the surface of the substrate to be processed, The rinsing liquid is supplied to the surface of the substrate to be processed while increasing the exhaust amount in the processing chamber to the first exhaust amount and rotating the rotary table at a second rotation speed higher than the first rotation speed. Of the process and the rinse liquid After stopping the supply, the rotating the rotary table at the faster than the second rotational speed a third rotational speed, characterized in that a step of drying the surface of the substrate to be processed.
【０００７】また、第２の発明は、表面に感光性膜が形
成された被処理基板が配置される処理室内を、第１の排
気量で排気しつつ、回転テーブルに保持された前記被処
理基板を第１の回転速度で回転させながら現像液を前記
被処理基板表面に供給する工程と、前記現像液の供給を
停止するとともに前記回転テーブルを停止させ、前記処
理室内の排気を前記被処理基板の現像処理の均一性が所
望の範囲となる第２の排気量にまで減少させ、前記被処
理基板を前記被処理基板表面に供給した前記現像液で現
像する工程と、前記処理室内の排気量を前記第１の排気
量に増加させると共に、前記回転テーブルを前記第１の
回転速度より速い第２の回転速度で回転させつつ、前記
被処理基板表面にリンス液を供給する工程と、前記処理
室内の排気量を前記第１の排気量に維持すると共に、前
記リンス液の供給を停止した後、前記回転テーブルを前
記第２の回転速度より速い第３の回転速度で回転させ、
前記被処理基板表面を乾燥させる工程とを有することを
特徴とする。A second aspect of the invention is to evacuate a processing chamber in which a substrate to be processed having a photosensitive film formed thereon is disposed with a first exhaust amount while holding the object to be treated held on a rotary table. Supplying a developing solution to the surface of the substrate to be processed while rotating the substrate at a first rotation speed; stopping the supply of the developing solution and stopping the rotary table; A step of reducing the uniformity of the development processing of the substrate to a second exhaust amount within a desired range and developing the substrate to be processed with the developer supplied to the surface of the substrate to be processed; Supplying a rinse liquid to the surface of the substrate to be processed while increasing the amount to the first exhaust amount and rotating the rotary table at a second rotation speed higher than the first rotation speed; The amount of exhaust in the processing chamber While maintaining the first exhaust amount, the after stopping the supply of the rinsing liquid, rotates the rotary table at the second faster than the rotational speed third speed,
And a step of drying the surface of the substrate to be processed.
【０００８】[0008]
【作用】縦軸を現像液温度、横軸を現像時間とした第４
図のグラフは、本発明者等が実測した6 インチの半導体
ウエハを従来の現像方法を用いて現像した場合の設定温
度25℃の現像液の温度変化を示すもので、実線Ａ、点線
Ｂ、一点鎖線Ｃは、それぞれ半導体ウエハ中央部、中央
部から周辺方向へ30mm離れた位置、さらにこの位置から
周辺方向へ30mm離れた位置における現像液の温度変化を
示している。このグラフに示されるように、現像液の温
度は、被処理基板周辺部へ向かうにしたがつて、急激に
低下しており、この現像液の温度低下が被処理基板の現
像状態の不均一さの原因となっていることが判明した。[Function] Fourth, the vertical axis represents developer temperature, and the horizontal axis represents development time
The graph in the figure shows the temperature change of the developing solution at the set temperature of 25 ° C. when the 6-inch semiconductor wafer actually developed by the present inventors is developed using the conventional developing method. The solid line A, the dotted line B, The chain line C indicates the temperature change of the developing solution at the center of the semiconductor wafer, at a position 30 mm away from the center in the peripheral direction, and at a position 30 mm away from this position in the peripheral direction. As shown in this graph, the temperature of the developing solution drastically decreases as it goes toward the peripheral portion of the substrate to be processed, and this temperature drop of the developing solution causes unevenness of the developing state of the substrate to be processed. It was found to be the cause of.
【０００９】本発明の現像方法では、被処理基板と現像
液とを接触させ、感光性膜に所定の化学変化を生じさせ
る現像工程を、被処理基板の現像処理の均一性が所望の
範囲となる第２の排気量にまで減少させて行なってお
り、現像液の温度低下を抑制し、現像液の被処理基板の
面内における温度不均一の発生を抑制しているため、現
像状態の均一化を図ることができる。In the developing method of the present invention, the developing step in which the substrate to be treated is brought into contact with the developing solution to cause a predetermined chemical change in the photosensitive film, and the uniformity of the developing treatment of the substrate to be treated is within a desired range. The second exhaust amount is reduced to the following value to suppress the temperature drop of the developing solution and to prevent the temperature non-uniformity of the developing solution within the surface of the substrate to be processed. Can be realized.
【００１０】また、現像液を被処理基板表面に供給する
工程とリンス液を供給する工程、および、第２の発明で
はこれらの工程に加えてに乾燥させる工程の排気量を、
第１の排気量としているので、排気量の変動を最小限と
して安定した処理を行うことができる。Further, the exhaust amount of the step of supplying the developing solution to the surface of the substrate to be processed, the step of supplying the rinse solution, and the step of drying in addition to these steps in the second invention,
Since the first exhaust amount is used, it is possible to perform stable processing with a minimum change in the exhaust amount.
【００１１】[0011]
【実施例】以下本発明の現像方法を図面を参照して実施
例について説明する。Embodiments of the developing method of the present invention will be described below with reference to the drawings.
【００１２】第１図は、本発明の現像方法を適用した一
実施例の現像装置１の構成を示している。この実施例に
おける現像装置１では、処理室２内に半導体ウエハ等の
被処理基板３を真空チャック等により吸着保持する載置
台４が配置されており、この載置台４には、被処理基板
３を載置台４とともに回転させる回転機構５が接続され
ている。FIG. 1 shows the construction of a developing device 1 of an embodiment to which the developing method of the present invention is applied. In the developing device 1 in this embodiment, a mounting table 4 for adsorbing and holding a substrate 3 to be processed such as a semiconductor wafer by a vacuum chuck or the like is arranged in the processing chamber 2, and the substrate 4 to be processed is mounted on the mounting table 4. A rotating mechanism 5 for rotating the table with the mounting table 4 is connected.
【００１３】載置台４上方には、ノズル６ａとリンスノ
ズル７ａが配置されており、これらのノズル６ａ、７ａ
を介して、現像液供給部６およびリンス液供給部７から
被処理基板３へ向けて現像液およびリンス液が供給され
る。A nozzle 6a and a rinse nozzle 7a are arranged above the mounting table 4, and these nozzles 6a and 7a are provided.
The developing solution and the rinsing solution are supplied from the developing solution supplying section 6 and the rinsing solution supplying section 7 toward the substrate 3 to be processed via the.
【００１４】また、処理室２の下部には、廃液排出用開
口８と、排気装置９に接続された排気用開口１０が配置
されており、排気装置９と排気用開口１０との間には、
排気路の開閉を行なうシャッタ１１が介挿されている。Further, a waste liquid discharge opening 8 and an exhaust opening 10 connected to an exhaust device 9 are arranged in the lower part of the processing chamber 2, and between the exhaust device 9 and the exhaust opening 10. ,
A shutter 11 that opens and closes the exhaust path is inserted.
【００１５】そして、載置台４、回転機構５、現像液供
給部６、リンス液供給部７、シャッタ１１は、それぞれ
マイクロコンピュ―タ等からなる制御部１２に接続さ
れ、この制御部１２によって制御される。The mounting table 4, the rotating mechanism 5, the developing solution supply unit 6, the rinse solution supply unit 7, and the shutter 11 are connected to a control unit 12 including a microcomputer and the like, and controlled by the control unit 12. To be done.
【００１６】上記構成の現像装置１を用いた一実施例の
現像方法について述べる。A developing method of an embodiment using the developing device 1 having the above structure will be described.
【００１７】すなわち、まず、図示しない搬送装置等に
より被処理基板３を載置台４上に載置し、載置台４の真
空チャックを作動し、被処理基板３を載置台４上に吸着
保持する。That is, first, the substrate 3 to be processed is placed on the mounting table 4 by a transfer device (not shown), the vacuum chuck of the mounting table 4 is operated, and the substrate 3 to be processed is suction-held on the mounting table 4. .
【００１８】次に、回転機構５により被処理基板３を例
えば10rpm 〜40rpm で回転させ、現像液供給部６によ
り、ノズル６ａからスプレ―スキャンしながら被処理基
板３へ向けて現像液を供給する。この間は、シャッタ１
１を開とし、10〜 20mmH2 O 程度の第１の排気量で処理
室２からの排気を行なう。Next, the substrate 3 to be processed is rotated by the rotating mechanism 5 at, for example, 10 rpm to 40 rpm, and the developer is supplied from the nozzle 6a to the substrate 3 while spray-scanning from the nozzle 6a. . During this time, the shutter 1
1 is opened, and the processing chamber 2 is evacuated with a first displacement of about 10 to 20 mmH 2 O.
【００１９】この後、回転およびスプレ―スキャンを停
止し、あらかじめ設定された例えば30秒等の所定の現像
時間の間、パドル現像により、被処理基板表面に形成さ
れたフォトレジスト等の感光性膜の現像を行なう。本実
施例において、この現像工程中は、制御部１２によって
シャッタ１１を閉塞し、処理室２内からの排気をほとん
どゼロとする。なお、この時の排気量（第２の排気量）
の設定は、後述するように、所望の均一性が得られる排
気量とする。Thereafter, the rotation and the spray scan are stopped, and a photosensitive film such as a photoresist formed on the surface of the substrate to be processed by paddle development for a predetermined developing time such as 30 seconds set in advance. Development. In the present embodiment, the shutter 11 is closed by the control unit 12 during this developing process so that the exhaust from the processing chamber 2 is almost zero. The exhaust volume at this time (second exhaust volume)
As will be described later, the value of is set to an exhaust amount that achieves desired uniformity.
【００２０】しかる後、上記現像液の供給工程時の回転
速度より速い回転速度、例えば 500rpm 〜2000rpm 程度
の回転数で被処理基板３を回転させ、リンス液供給部７
によりリンスノズル７ａから純水等のリンス液を被処理
基板３表面に供給する。この時は、シャッタ１１を開と
し、10〜 20mmH2 O 程度の第１の排気量で処理室２から
の排気を行なう。After that, the substrate 3 to be processed is rotated at a rotational speed higher than the rotational speed during the developer supplying step, for example, about 500 rpm to 2000 rpm, and the rinse solution supply unit 7 is rotated.
Then, a rinse liquid such as pure water is supplied to the surface of the substrate 3 to be processed from the rinse nozzle 7a. At this time, the shutter 11 is opened, and the processing chamber 2 is exhausted with the first exhaust amount of about 10 to 20 mmH 2 O.
【００２１】上記リンス操作を、例えば10秒〜20秒程度
の所定時間行なった後、リンス液の供給を停止して、被
処理基板３の回転を、現像工程時の回転速度より速い回
転速度、例えば3000rpm 〜5000rpm 程度の回転数に上昇
させて被処理基板３表面に付着した液体を遠心力により
除去し、乾燥させる。この間もシャッタ１１を開とし、
10〜 20mmH2 O 程度の第１の排気量で処理室２からの排
気を行なう。After performing the above-mentioned rinsing operation for a predetermined time of, for example, about 10 to 20 seconds, the supply of the rinsing liquid is stopped, and the substrate 3 to be processed is rotated at a rotation speed higher than the rotation speed during the developing step. For example, the number of rotations is increased to about 3000 rpm to 5000 rpm to remove the liquid adhering to the surface of the substrate 3 to be processed by centrifugal force, and the liquid is dried. During this time, the shutter 11 is opened,
Exhaust from the processing chamber 2 is performed with a first exhaust amount of about 10 to 20 mmH 2 O.
【００２２】被処理基板３の乾燥が終了すると、回転機
構５を停止し、図示しない搬送装置によって、被処理基
板３を処理室２内から搬出する。When the drying of the substrate 3 to be processed is completed, the rotation mechanism 5 is stopped and the substrate 3 to be processed is unloaded from the processing chamber 2 by a transfer device (not shown).
【００２３】縦軸を現像液温度、横軸を現像時間とした
第２図のグラフは、この実施例の現像方法において実測
した6 インチの半導体ウエハを現像した場合の設定温度
25℃の現像液の温度変化を示すもので、実線Ｄ、点線
Ｅ、一点鎖線Ｆは、それぞれ半導体ウエハ中央部、中央
部から周辺方向へ30mm離れた位置、さらにこの位置から
周辺方向へ30mm離れた位置における現像液の温度変化を
示している。The graph of FIG. 2 in which the vertical axis represents the developing solution temperature and the horizontal axis represents the developing time is a set temperature when a 6-inch semiconductor wafer actually developed in the developing method of this embodiment is developed.
The solid line D, the dotted line E, and the alternate long and short dash line F indicate the temperature change of the developing solution at 25 ° C., respectively, at the central portion of the semiconductor wafer, at a position 30 mm away from the central portion in the peripheral direction, and further from this position in the peripheral direction 30 mm The change in temperature of the developing solution at the open position is shown.
【００２４】このグラフに示されるように、この実施例
の現像装置では、第４図のグラフに示した従来の現像装
置の場合に比べて、現像中の現像液の温度低下が少な
く、また、半導体ウエハの中央部、周辺部等の位置の違
いによる現像液の温度の差も少なくすることができる。As shown in this graph, in the developing device of this embodiment, the temperature drop of the developing solution during development is less than in the case of the conventional developing device shown in the graph of FIG. It is possible to reduce the difference in temperature of the developing solution due to the difference in the positions of the central portion and the peripheral portion of the semiconductor wafer.
【００２５】なお、この実施例では、現像時間中の処理
室２内からの排気をほとんどゼロとしたが、縦軸を半導
体ウエハ面内に形成された線幅のバラツキ、横軸を排気
量とした第３図のグラフに実線Ｇで示すように、従来の
現像方法における排気量10〜20mm H2 O を現像工程中
は、5mmH2 O 以下、好ましくは1mmH2 O 以下に減少させ
ても、従来に比べて現像状態を均一化することができ
る。したがって、予め第３図に示すようなウエハ面内の
線幅バラツキと排気量との関係のデータを取っておき、
現像工程中の排気量を、所望の均一性（線幅バラツキ）
が得られる排気量とすれば、例えば現像液のミスト等が
外部に漏洩することも防止できる。In this embodiment, the exhaust from the processing chamber 2 during the developing time was set to almost zero, but the vertical axis represents the variation of the line width formed in the semiconductor wafer surface, and the horizontal axis represents the exhaust amount. as shown by the solid line G in the graph of FIG. 3 that, during the development process the exhaust amount 10 to 20 mm H 2 O in the conventional development method, 5mmH 2 O or less, even preferably reduced below 1mmH 2 O, The development state can be made more uniform than in the conventional case. Therefore, data on the relationship between the line width variation in the wafer surface and the exhaust amount as shown in FIG.
Desired uniformity (line width variation) of the exhaust volume during the development process
If the exhaust amount is such that the developer mist or the like can be prevented from leaking to the outside.
【００２６】また、現像液を被処理基板表面に供給する
工程と、リンス液を供給する工程と、乾燥させる工程の
各工程の排気量を、第１の排気量で一定としているの
で、排気量の変動を最小限として安定した処理を行うこ
とができる。Further, since the exhaust amount in each of the process of supplying the developing solution to the surface of the substrate to be processed, the process of supplying the rinse liquid, and the process of drying is constant at the first exhaust amount, the exhaust amount is It is possible to perform stable processing by minimizing the fluctuation of
【００２７】[0027]
【発明の効果】上述のように、本発明の現像方法では、
大型の被処理基板でも従来の現像方法に比べて基板面内
の現像状態が均一となるように現像処理を行なうことが
でき、半導体ウエハ上に微細パタ―ンを形成する場合で
も、半導体ウエハ面に形成される線幅等を均一化するこ
とができる。As described above, in the developing method of the present invention,
Even with a large substrate to be processed, development processing can be performed so that the development state in the substrate surface is more uniform than in the conventional development method. Even when forming a fine pattern on a semiconductor wafer, the semiconductor wafer surface It is possible to make uniform the line width and the like formed in.
【図１】本発明の現像方法を適用した一実施例の現像装
置を示す構成図。FIG. 1 is a configuration diagram showing a developing device of an embodiment to which a developing method of the present invention is applied.
【図２】図１に示す現像装置を用いて実施した現像処理
における現像液の温度変化を示すグラフ。FIG. 2 is a graph showing a temperature change of a developing solution in a developing process performed using the developing device shown in FIG.
【図３】半導体ウエハ面内に形成された線幅のバラツキ
と排気量との関係を示すグラフ。FIG. 3 is a graph showing the relationship between the variation in line width formed on the surface of a semiconductor wafer and the exhaust amount.
【図４】従来の現像方法における現像液の温度変化を示
すグラフ。FIG. 4 is a graph showing a temperature change of a developing solution in a conventional developing method.
１……現像装置、２……処理室、３……被処理基板、４
……載置台、６……現像液供給部、９……排気装置、１
０……排気用開口、１１……シャッタ、１２……制御
部。1 ... Developing device, 2 ... Processing chamber, 3 ... Substrate to be processed, 4
…… Mounting table, 6 …… Developer supply part, 9 …… Exhaust device, 1
0 ... Exhaust opening, 11 ... Shutter, 12 ... Control section.
Claims (4)
が配置される処理室内を、第１の排気量で排気しつつ、
回転テーブルに保持された前記被処理基板を第１の回転
速度で回転させながら現像液を前記被処理基板表面に供
給する工程と、 前記現像液の供給を停止するとともに前記回転テーブル
を停止させ、前記処理室内の排気を前記被処理基板の現
像処理の均一性が所望の範囲となる第２の排気量にまで
減少させ、前記被処理基板を前記被処理基板表面に供給
した前記現像液で現像する工程と、 前記処理室内の排気量を前記第１の排気量に増加させる
と共に、前記回転テーブルを前記第１の回転速度より速
い第２の回転速度で回転させつつ、前記被処理基板表面
にリンス液を供給する工程と、 前記リンス液の供給を停止した後、前記回転テーブルを
前記第２の回転速度より速い第３の回転速度で回転さ
せ、前記被処理基板表面を乾燥させる工程とを有するこ
とを特徴とする現像方法。1. A process chamber, in which a substrate to be processed having a photosensitive film formed on the surface thereof is disposed, is evacuated with a first exhaust amount,
Supplying a developing solution to the surface of the substrate to be processed while rotating the substrate to be processed held on a rotary table at a first rotation speed; stopping the supply of the developer and stopping the rotary table; Exhaust gas in the processing chamber is reduced to a second exhaust amount at which the uniformity of the development processing of the substrate to be processed is within a desired range, and the substrate to be processed is developed by the developer supplied to the surface of the substrate to be processed. And increasing the exhaust amount in the processing chamber to the first exhaust amount, and rotating the rotary table at a second rotation speed higher than the first rotation speed, and A step of supplying a rinse liquid, and a step of rotating the rotary table at a third rotation speed higher than the second rotation speed after stopping the supply of the rinse liquid to dry the substrate surface to be processed. Developing method characterized by.
少なくとも5mmH2 O 以下とする特許請求の範囲第１項記
載の現像方法。2. The exhaust amount from the processing chamber during the developing process
The developing method according to claim 1, wherein the developing amount is at least 5 mmH 2 O or less.
が配置される処理室内を、第１の排気量で排気しつつ、
回転テーブルに保持された前記被処理基板を第１の回転
速度で回転させながら現像液を前記被処理基板表面に供
給する工程と、 前記現像液の供給を停止するとともに前記回転テーブル
を停止させ、前記処理室内の排気を前記被処理基板の現
像処理の均一性が所望の範囲となる第２の排気量にまで
減少させ、前記被処理基板を前記被処理基板表面に供給
した前記現像液で現像する工程と、 前記処理室内の排気量を前記第１の排気量に増加させる
と共に、前記回転テーブルを前記第１の回転速度より速
い第２の回転速度で回転させつつ、前記被処理基板表面
にリンス液を供給する工程と、 前記処理室内の排気量を前記第１の排気量に維持すると
共に、前記リンス液の供給を停止した後、前記回転テー
ブルを前記第２の回転速度より速い第３の回転速度で回
転させ、前記被処理基板表面を乾燥させる工程とを有す
ることを特徴とする現像方法。3. A process chamber, in which a substrate to be processed having a photosensitive film formed on its surface is placed, is evacuated with a first exhaust amount,
Supplying a developing solution to the surface of the substrate to be processed while rotating the substrate to be processed held on a rotary table at a first rotation speed; stopping the supply of the developing solution and stopping the rotary table; Exhaust gas in the processing chamber is reduced to a second exhaust amount at which the uniformity of the development processing of the substrate to be processed is within a desired range, and the substrate to be processed is developed by the developer supplied to the surface of the substrate to be processed. And increasing the exhaust amount in the processing chamber to the first exhaust amount and rotating the rotary table at a second rotation speed higher than the first rotation speed, A step of supplying a rinse liquid, and maintaining the exhaust gas amount in the processing chamber at the first exhaust gas amount, stopping the supply of the rinse liquid, and then rotating the rotary table at a speed higher than the second rotation speed. The times Developing method characterized by a step of rotating at speed, drying the surface of the substrate to be processed.
少なくとも5mmH2 O 以下とする特許請求の範囲第３項記
載の現像方法。4. The amount of exhaust from the processing chamber during the developing process
The developing method according to claim 3, wherein the developing method is at least 5 mmH 2 O or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140195A JPH088211B2 (en) | 1995-01-27 | 1995-01-27 | Development method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140195A JPH088211B2 (en) | 1995-01-27 | 1995-01-27 | Development method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61311166A Division JPH0611023B2 (en) | 1986-12-29 | 1986-12-29 | Development method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07263337A true JPH07263337A (en) | 1995-10-13 |
| JPH088211B2 JPH088211B2 (en) | 1996-01-29 |
Family
ID=11777002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1140195A Expired - Lifetime JPH088211B2 (en) | 1995-01-27 | 1995-01-27 | Development method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088211B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013115274A (en) * | 2011-11-29 | 2013-06-10 | Sharp Corp | Method of manufacturing semiconductor device, development device, and semiconductor device |
-
1995
- 1995-01-27 JP JP1140195A patent/JPH088211B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013115274A (en) * | 2011-11-29 | 2013-06-10 | Sharp Corp | Method of manufacturing semiconductor device, development device, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH088211B2 (en) | 1996-01-29 |
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